JPH05257261A - Transmittance modulation type photomask and production of optical parts by using the same - Google Patents

Transmittance modulation type photomask and production of optical parts by using the same

Info

Publication number
JPH05257261A
JPH05257261A JP8960992A JP8960992A JPH05257261A JP H05257261 A JPH05257261 A JP H05257261A JP 8960992 A JP8960992 A JP 8960992A JP 8960992 A JP8960992 A JP 8960992A JP H05257261 A JPH05257261 A JP H05257261A
Authority
JP
Japan
Prior art keywords
photomask
along
optical component
light
diffraction grating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8960992A
Other languages
Japanese (ja)
Inventor
Mutsuji Watanabe
陸司 渡辺
Shigeki Nakamu
茂樹 中務
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kuraray Co Ltd
Original Assignee
Kuraray Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kuraray Co Ltd filed Critical Kuraray Co Ltd
Priority to JP8960992A priority Critical patent/JPH05257261A/en
Publication of JPH05257261A publication Critical patent/JPH05257261A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To obtain the transmittance modulation-type photomask which can produce optical parts having bidirectional rugged patterns by exposing once and the process for production of the optical parts by using this photomask. CONSTITUTION:Apertures 6 and light shielding parts 7 are alternately arranged at prescribed intervals (a), (b) along first and second directions A, B. The width W1 along the first direction A of the light shielding part 7A existing between the apertures 6A and 6A changes along the second direction B in correspondence to the prescribed shape of the ruggedness 16 of a diffraction grating (optical part) 1. The two-dimensional diffraction grating 1 having the rugged patterns in the two directions A, B is produced by one time of exposing when this photomask 5 is used.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、二軸方向に凹凸パター
ンをもつ光学部品の製造が可能な透過率変調型のフォト
マスクと、これを使用し、公知の感光性材料を感光させ
て、回折格子やホログラムのような光学部品を得る光学
部品の製造方法とに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a transmittance modulation type photomask capable of producing an optical component having a concavo-convex pattern in biaxial directions, and a known photosensitizing material exposed to light using the photomask. The present invention relates to a method of manufacturing an optical component such as a diffraction grating and a hologram.

【0002】[0002]

【従来の技術】二軸方向に正弦波格子や矩形波格子のよ
うな凹凸が配置された光学部品を得るためには、二軸方
向のパターンをもつフォトマスクを使用して、フォトマ
スクとレジストとの間の距離を制御するか、または光源
とフォトマスクとの間に光拡散板を挿入することによ
り、光の平行度を乱す手法を採ることが一般的である。
しかしながら、このような手法によれば、形成される光
学部品の断面形状は、図13に示すように、凸部2では
所定の凹凸形状(この例では矩形状)であるが、凹部3
ではほぼ平坦になる。つまり、単に二軸方向A,Bに沿
って凸部2が並んだ構造にすぎない。したがって、一軸
方向に凹凸パターンをもったものを組み合わせて二軸方
向とも凹凸パターンをもつ、たとえば図14に示すよう
な所望の光学部品とは異なった光学特性をもつ光学部品
となる。
2. Description of the Related Art In order to obtain an optical component in which irregularities such as a sine wave grating and a rectangular wave grating are arranged in a biaxial direction, a photomask having a biaxial pattern is used and a photomask and a resist are used. Generally, a method of disturbing the parallelism of light is controlled by controlling the distance between the light source and the photomask or inserting a light diffusion plate between the light source and the photomask.
However, according to such a method, as shown in FIG. 13, the cross-sectional shape of the optical component formed is a predetermined concave-convex shape (rectangular shape in this example) in the convex portion 2, but the concave portion 3
Then it becomes almost flat. That is, it is merely a structure in which the convex portions 2 are arranged along the biaxial directions A and B. Therefore, an optical component having a concavo-convex pattern in the uniaxial direction is combined with the concavo-convex pattern in the biaxial direction, and has an optical characteristic different from the desired optical component as shown in FIG. 14, for example.

【0003】すなわち、図14において、光学部品であ
る回折格子1Aは、第1および第2の方向A,Bに沿っ
て凸部2と凹部3とが配置され、さらに、凹部3も凹凸
形状を呈していて、中間部31と底部32とを備えてお
り、これによって、二軸方向に凹凸パターンをもつ、所
望の、いわゆる二次元回折格子1が得られる。
That is, in FIG. 14, a diffraction grating 1A which is an optical component has a convex portion 2 and a concave portion 3 arranged along the first and second directions A and B, and the concave portion 3 also has an uneven shape. It has a middle portion 31 and a bottom portion 32, and thereby a desired so-called two-dimensional diffraction grating 1 having a concavo-convex pattern in the biaxial direction is obtained.

【0004】[0004]

【発明が解決しようとする課題】そこで、凹部での断面
形状も所定の凹凸形状となる光学部品を得るためには、
一軸方向の格子パターンをもつフォトマスクを、その軸
方向を2つの方向のそれぞれに合致させて露光すること
により、生産することができる。しかしながら、この方
法は2回の露光処理が必要なため、生産性が低く、光学
部品は高価にならざるを得ない。
Therefore, in order to obtain an optical component in which the cross-sectional shape of the recess is also a predetermined uneven shape,
A photomask having a uniaxial lattice pattern can be produced by exposing the photomask so that its axial direction matches with each of the two directions. However, since this method requires two exposure processes, the productivity is low and the optical components are inevitably expensive.

【0005】本発明は、上記の点に鑑みてなされたもの
で、二軸方向の凹凸パターンを備え、かつ、その凹凸が
種々の断面形状をもつ光学部品を、安価に大量生産でき
る透過率変調型のフォトマスク、およびそれを用いた光
学部品の製造方法を提供することを目的としている。
The present invention has been made in view of the above points, and it is possible to inexpensively mass-produce an optical component provided with a biaxial concavo-convex pattern, and the concavo-convex pattern has various cross-sectional shapes. It is an object of the present invention to provide a mold photomask and a method for manufacturing an optical component using the photomask.

【0006】[0006]

【課題を解決するための手段】上記目的を達成するため
に、本発明の透過率変調型フォトマスクは、開口部と遮
光部が第1および第2の方向に沿って所定間隔で交互に
配置されており、上記第1の方向に沿って並んだ開口部
の間に位置する遮光部は、第1の方向における幅が、光
学部品表面に露光によって形成されるべき凹凸の所定形
状に対応して、第2の方向に沿って変化している。
In order to achieve the above object, in a transmittance modulation type photomask of the present invention, openings and light shielding portions are alternately arranged at predetermined intervals along the first and second directions. The light-shielding portion located between the openings arranged along the first direction has a width in the first direction that corresponds to a predetermined shape of the unevenness to be formed on the surface of the optical component by exposure. And changes along the second direction.

【0007】また、本発明の光学部品の製造方法は、上
記透過率変調型フォトマスクを用いて基材面上の感光性
材料膜に露光し、上記第1および第2の方向に沿って上
記所定間隔で配置された所定形状の凹凸を形成する。
Further, in the method for manufacturing an optical component of the present invention, the photosensitive material film on the surface of the substrate is exposed by using the above-mentioned transmittance modulation type photomask, and the above-mentioned first and second directions are followed. Asperities having a predetermined shape are formed at predetermined intervals.

【0008】[0008]

【作用】本発明のフォトマスクおよびこれを用いた光学
部品の製造方法によれば、第1の方向に沿って並んだ開
口部の間に位置する遮光部について、その第1の方向に
おける幅が、第2の方向に沿って変化しているから、光
学部品の凹凸パターンのたとえば凹部に相当する遮光部
が、第2の方向に沿ってその面積を変化させていること
になる。したがって、フォトマスクにおける上記凹部に
相当する部分の光線透過率が、第2の方向に変化するの
で、このフォトマスクを使用して露光すると、上記凹部
の断面形状も所定の凹凸形状となる。つまり、1回の露
光によって二軸方向の凹凸パターンをもつ光学部品を作
製することができる。
According to the photomask of the present invention and the method of manufacturing an optical component using the photomask, the width of the light shielding portion located between the openings lined up along the first direction in the first direction is , The light-shielding portion corresponding to, for example, a concave portion of the concavo-convex pattern of the optical component changes its area along the second direction. Therefore, the light transmittance of the portion of the photomask corresponding to the recess changes in the second direction, so that when the photomask is used for exposure, the sectional shape of the recess also becomes a predetermined uneven shape. That is, it is possible to manufacture an optical component having a concavo-convex pattern in the biaxial direction by one exposure.

【0009】また、フォトマスクの開口部の形状および
間隔、ならびに上記遮光部の幅の変化率を適宜設定する
ことにより、種々の断面形状の凹凸を得ることができ
る。
Further, by appropriately setting the shape and spacing of the openings of the photomask, and the rate of change of the width of the light shielding portion, it is possible to obtain unevenness of various cross-sectional shapes.

【0010】さらに、フォトマスクの光線透過率は単純
な面積比で決定できるから、その面積比から本発明のフ
ォトマスクにおける遮光部の幅の変化率、つまり、遮光
部の端縁の曲線形状を容易に決定できる。しかもマスク
パターンは通常のクロムエッチング等の方法で形成でき
るので、フォトマスクの作製が極めて容易である。
Further, since the light transmittance of the photomask can be determined by a simple area ratio, the rate of change of the width of the light shielding portion in the photomask of the present invention, that is, the curved shape of the edge of the light shielding portion can be determined from the area ratio. Easy to determine. In addition, since the mask pattern can be formed by a method such as usual chrome etching, the photomask can be manufactured very easily.

【0011】[0011]

【実施例】図1は本発明に係るフォトマスクの一例を示
す。このフォトマスク5は、光学部品である回折格子の
表面に所定形状、たとえば正弦波形状の多数の凹凸を形
成するのに用いられるもので、開口部と遮光部の組合せ
によって露光用の光線の透過率を変化させる透過率変調
型である。
FIG. 1 shows an example of a photomask according to the present invention. This photomask 5 is used to form a large number of irregularities of a predetermined shape, for example, a sinusoidal shape, on the surface of a diffraction grating that is an optical component. It is a transmittance modulation type that changes the rate.

【0012】図2の拡大平面図に示すように、フォトマ
スク5には、開口部6と遮光部7が第1の方向Aに沿っ
て、それぞれ所定間隔aで交互に配置されるとともに、
第2の方向Bに沿っても、所定間隔bで交互に配置され
ている。上記第1の方向Aに沿って並んだ開口部6A,
6Aの間に位置する遮光部7Aは、第1の方向Aにおけ
る幅W1が、第2の方向Bに沿って変化している。その
変化曲線、つまり遮光部7Aの端縁71の曲線形状は、
形成すべき凹凸の正弦形状に対応して変化する楕円形と
なっている。また、第2の方向Bに沿って並んだ開口部
6B,6Bの間に位置する遮光部7Bも、同様に、第2
の方向Bにおける幅W2が、第1の方向Aに沿って変化
して、その端縁72が楕円形となっている。
As shown in the enlarged plan view of FIG. 2, in the photomask 5, openings 6 and light-shielding portions 7 are alternately arranged at predetermined intervals a along the first direction A, and
Even along the second direction B, they are alternately arranged at a predetermined interval b. The openings 6A arranged along the first direction A,
The width W1 in the first direction A of the light-shielding portion 7A located between 6A changes along the second direction B. The change curve, that is, the curved shape of the edge 71 of the light shielding portion 7A is
It has an elliptical shape that changes corresponding to the sine shape of the unevenness to be formed. Similarly, the light-shielding portion 7B located between the openings 6B and 6B arranged along the second direction B is also the second portion.
The width W2 in the direction B of is changed along the first direction A, and the edge 72 thereof has an elliptical shape.

【0013】このフォトマスク5を使って正弦波状の凹
凸パターンを持つ回折格子を形成しようとするときに
は、図3に示すように、光源10からの光線11によ
り、フォトマスク5を介して、回折格子1の基材13の
主面14上に形成された感光性材料膜15に露光する。
これにより、図2の第1および第2の方向A,Bに沿っ
て所定間隔a,bで配置された正弦波状の凹凸16が形
成される。このとき、フォトマスク5と感光性材料膜1
5の間の距離Lを調整するか、光源10とフォトマスク
5の間にスリガラス等の光拡散板17を配置して、光線
の平行度を乱したのち露光する。
When a diffraction grating having a sinusoidal concavo-convex pattern is to be formed using this photomask 5, as shown in FIG. 3, a light beam 11 from a light source 10 causes the diffraction grating to pass through the photomask 5. The photosensitive material film 15 formed on the main surface 14 of the first base material 13 is exposed.
As a result, the sine wave-shaped irregularities 16 are formed at predetermined intervals a and b along the first and second directions A and B of FIG. At this time, the photomask 5 and the photosensitive material film 1
5 is adjusted, or a light diffusing plate 17 such as frosted glass is arranged between the light source 10 and the photomask 5 to disturb the parallelism of light rays and then perform exposure.

【0014】ここで、上記感光性材料膜15としては、
一般的なフォトレジスト膜のほか、メチルメタクリレー
トと2−ブテニルメタクリレートの共重合体と、m−ベ
ンゾイルベンゾフェノンの混合物よりなる特殊感光性樹
脂膜(特願平1−132286に記載された組成物)が
用いられる。この特殊感光性樹脂膜は、フォトマスク5
を介して露光し、さらに真空加熱することにより、露光
されていない未反応のm−ベンゾイルベンゾフェノンが
除去されて、凹凸が形成される。
Here, as the photosensitive material film 15,
Besides a general photoresist film, a special photosensitive resin film made of a mixture of a copolymer of methyl methacrylate and 2-butenyl methacrylate and m-benzoylbenzophenone (composition described in Japanese Patent Application No. 1-132286). Is used. This special photosensitive resin film is used for the photomask 5
The unreacted unreacted m-benzoylbenzophenone is removed by exposing the film through the film and further heating it in vacuum to form unevenness.

【0015】このような本発明のフォトマスク5は、通
常のフォトマスク作製法を用いて容易に作製できる。す
なわち、電子線または紫外線等で感光性材料膜にパター
ンを形成した後に、クロム等の遮光用金属膜をエッチン
グ除去して開口部を形成する方法によってもよいし、銀
塩乳剤等を塗布した板またはフィルムに光でパターンを
書き込んで現像処理したものであってもよい。
The photomask 5 of the present invention as described above can be easily manufactured by using an ordinary photomask manufacturing method. That is, a method may be used in which a pattern is formed on a photosensitive material film with an electron beam or an ultraviolet ray, and then a light shielding metal film such as chromium is removed by etching to form an opening, or a plate coated with a silver salt emulsion or the like. Alternatively, the pattern may be written on the film with light to be developed.

【0016】以下、実施例により本発明を具体的に説明
する。 実施例1 本実施例のフォトマスクは、図2に示した形状である。
第1および第2の方向A,Bに沿った所定間隔a,bが
共に、20μmに設定されており、この20μmのピッ
チで、遮光部7A,7Bの幅W1,W2のそれぞれが徐
々に変化し、中央部の幅W1c,W2cが5μmで、開
口部6の始端および終端での幅W1e,W2eが10μ
mとなるように、遮光部7A,7Bの端縁71,72が
楕円形に形成されている。
The present invention will be specifically described below with reference to examples. Example 1 The photomask of this example has the shape shown in FIG.
The predetermined intervals a and b along the first and second directions A and B are both set to 20 μm, and the widths W1 and W2 of the light shielding portions 7A and 7B are gradually changed at the pitch of 20 μm. However, the widths W1c and W2c of the central portion are 5 μm, and the widths W1e and W2e at the start end and the end of the opening 6 are 10 μm.
The edges 71 and 72 of the light-shielding portions 7A and 7B are formed in an elliptical shape so as to be m.

【0017】このフォトマスク5を用いて、図3に示し
たように、ガラス基板(基材)13の上に上記特殊感光
性樹脂を約3μmの膜厚でスピンコートして形成された
感光性材料膜15に、マスクアライナーを用いて、フォ
トマスク5と感光性材料膜15の表面との間隔Lを10
μmに設定し、500秒間露光した。得られた凹凸16
の断面形状は図4のとおりであり、図2の第2の方向B
に並んだ開口部6B,6Bをとおる凸部断面S1に現れ
る凸部2、および第2の方向Bに並んだ遮光部7A,7
Aをとおる凹部断面S2に現れる凹部3は共に、概ね正
弦波の断面形状であった。
Using this photomask 5, as shown in FIG. 3, a photosensitive material formed by spin-coating the above-mentioned special photosensitive resin on a glass substrate (base material) 13 in a film thickness of about 3 μm. A mask aligner is used for the material film 15, and the gap L between the photomask 5 and the surface of the photosensitive material film 15 is set to 10
It was set to μm and exposed for 500 seconds. Obtained unevenness 16
4 has a cross-sectional shape as shown in FIG. 4, and the second direction B in FIG.
The convex portion 2 appearing in the convex portion cross section S1 passing through the openings 6B, 6B arranged in parallel, and the light shielding portions 7A, 7 arranged in the second direction B.
The recesses 3 appearing in the recess section S2 passing through A were both substantially sinusoidal in cross section.

【0018】また、この実施例1では、図2の第1の方
向Aに並んだ開口部6A,6Aをとおる凸部断面S3に
現れる凸部2は、図4(a)の断面S1と同一形状の概
ね正弦波の断面形状であり、第1の方向Aに並んだ遮光
部7B,7Bをとおる凹部断面S4に現れる凹部3も、
図4(b)の断面S2と同一形状の概ね正弦波の断面形
状であった。こうして、第1および第2の方向A,Bに
沿った格子パターンをもつ、格子ピッチ20μm、段差
0.6μmの正弦波状回折格子1が作製できた。この回
折格子1は、図14に示した回折格子1Aと比較して、
各凸部2および凹部3の断面形状が矩形ではなく正弦波
形である点で相違しているのみで、凹凸の配列は同一で
ある。
In the first embodiment, the convex portion 2 appearing in the convex portion cross section S3 passing through the openings 6A, 6A arranged in the first direction A of FIG. 2 is the same as the cross section S1 of FIG. 4A. The concave portion 3 which has a substantially sinusoidal cross-sectional shape and which appears in the concave portion cross section S4 passing through the light shielding portions 7B, 7B arranged in the first direction A is also
The cross-sectional shape was substantially sinusoidal, which was the same as the cross-section S2 in FIG. Thus, the sinusoidal diffraction grating 1 having a grating pattern along the first and second directions A and B and having a grating pitch of 20 μm and a step of 0.6 μm was manufactured. This diffraction grating 1 is different from the diffraction grating 1A shown in FIG.
The protrusions 2 and the recesses 3 are different in that the cross-sectional shapes thereof are not rectangular but sinusoidal, and the concavities and convexities are the same.

【0019】比較例1 本比較例1のフォトマスク50の概略図を図5に示す。
実施例1と同じく、開口部6および遮光部7のピッチ
a,bがそれぞれ20μmに設定され、上記開口部6お
よび遮光部7が同一ライン幅を持つ。このフォトマスク
50を用いて、実施例1と同一の特殊感光性樹脂からな
る感光性材料膜およびマスクアライナーを用いて同一の
条件で露光して、回折格子を作製した。その結果、現像
後得られた回折格子のパターンの断面形状は、図6のと
おりであり、凸部2の断面形状は概ね正弦波状である
が、凹部3はほぼ平面状であった。
Comparative Example 1 A schematic view of a photomask 50 of this Comparative Example 1 is shown in FIG.
Similar to the first embodiment, the pitches a and b of the opening 6 and the light shielding portion 7 are set to 20 μm, and the opening 6 and the light shielding portion 7 have the same line width. Using this photomask 50, a photosensitive material film made of the same special photosensitive resin as that used in Example 1 and a mask aligner were used for exposure under the same conditions to produce a diffraction grating. As a result, the cross-sectional shape of the pattern of the diffraction grating obtained after development was as shown in FIG. 6, and the cross-sectional shape of the convex portion 2 was substantially sinusoidal, but the concave portion 3 was substantially flat.

【0020】比較例2 本比較例のフォトマスク51の概略図を図7に示す。こ
こでは第1の方向Aのみに沿ってピッチa=20μmで
配置された一次元格子用パターンが描かれている。この
フォトマスク51を用い、実施例1と同一の特殊感光性
樹脂からなる感光性材料膜およびマスクアライナーを用
いて、フォトマスク51と感光性材料膜の表面との間隔
を10μmに設定し、500秒露光した。さらに、フォ
トマスク51の方向を90度変えて500秒露光した。
現像後に得られた凹凸のパターンは図8のとおりであ
り、凸部2、凹部3ともに概ね正弦波状を持つ、格子ピ
ッチ20μm、段差0.5μmの回折格子が作製でき
た。しかしながら、この方法では、2回の露光が必要な
ので、生産性が低い。
Comparative Example 2 FIG. 7 shows a schematic view of a photomask 51 of this comparative example. Here, a one-dimensional lattice pattern arranged with a pitch a = 20 μm along only the first direction A is drawn. Using this photomask 51, using the same photosensitive material film and mask aligner made of the same special photosensitive resin as in Example 1, the distance between the photomask 51 and the surface of the photosensitive material film was set to 10 μm, and 500 Second exposure. Further, the direction of the photomask 51 was changed by 90 degrees and exposure was performed for 500 seconds.
The uneven pattern obtained after development is as shown in FIG. 8, and a diffraction grating having a grating pitch of 20 μm and a step of 0.5 μm, in which both the convex portions 2 and the concave portions 3 have a substantially sinusoidal shape, could be manufactured. However, this method has low productivity because it requires two exposures.

【0021】実施例2 本実施例のフォトマスク5Aの概略図を図9に示す。こ
こでは、第1の方向Aに沿ったピッチaが5μmで、第
2の方向Bに沿ったピッチbが3μmの格子用パターン
が描かれている。第1の方向Aに沿って5μmピッチで
並んだ開口部6A,6Aの間に位置する遮光部7Aは、
第1の方向Aに沿った幅W1が開口部6で変化し、中央
部でW1c=1.5μmになり、開口部6の始端および
終端でW1e=2,5μmとなっている。第2の方向B
に沿って並んだ開口部6B,6Bの間に位置する遮光部
7Bは、第2の方向Bにおける幅W2が一定であり、第
1の方向Aに沿って変化していない。
Example 2 A schematic view of a photomask 5A of this example is shown in FIG. Here, a grid pattern having a pitch a of 5 μm along the first direction A and a pitch b of 3 μm along the second direction B is drawn. The light-shielding portion 7A located between the openings 6A and 6A arranged at a pitch of 5 μm along the first direction A is
The width W1 along the first direction A changes at the opening 6, W1c = 1.5 μm at the central portion, and W1e = 2.5 μm at the start and end of the opening 6. Second direction B
The width W2 in the second direction B of the light shielding portion 7B located between the openings 6B, 6B arranged along the direction is constant and does not change along the first direction A.

【0022】このフォトマスク5Aを用い、図3に示し
たように、ガラス基板13の上に上記特殊感光性樹脂を
約3μmの膜厚でスピンコートして形成された感光性材
料膜15に、マスクアライナーを用いて、フォトマスク
5Aと感光性材料膜15の表面との間隔Lを0μm(コ
ンタクト露光)に設定し、500秒露光した。現像後、
得られた断面形状を図10に示す。5μmの格子ピッチ
をもつ第1の方向Aにおける凸部2(凸部断面S3:図
10(a))の段差、および3μmの格子ピッチをもつ
第2の方向Bにおける凸部2(凸部断面S1)の段差は
共に、0.6μmであり、第2の方向Bにおける凹部3
(凹部断面S2:図10(b))の段差も0.6μmで
あった。こうして、第1および第2の方向A,Bに沿っ
た格子パターンをもつ正弦波状回折格子1が作製でき
た。
Using this photomask 5A, as shown in FIG. 3, a photosensitive material film 15 formed by spin-coating the above-mentioned special photosensitive resin with a film thickness of about 3 μm on a glass substrate 13, Using a mask aligner, the distance L between the photomask 5A and the surface of the photosensitive material film 15 was set to 0 μm (contact exposure), and exposure was performed for 500 seconds. After development,
The obtained cross-sectional shape is shown in FIG. The step of the convex portion 2 (convex section S3: FIG. 10A) in the first direction A having a lattice pitch of 5 μm, and the convex portion 2 (convex section in the second direction B having a lattice pitch of 3 μm Both the step S1) is 0.6 μm, and the recess 3 in the second direction B is
The step difference (recessed section S2: FIG. 10B) was also 0.6 μm. Thus, the sinusoidal diffraction grating 1 having a grating pattern along the first and second directions A and B was manufactured.

【0023】なお、第1の方向Aにおける凹部3(凹部
断面S4)は平面状である。つまり、得られた回折格子
1の凹部3は、上記実施例1とは異なり、第1の方向A
に沿っては平坦である。
The recess 3 (recess section S4) in the first direction A is planar. That is, the concave portion 3 of the obtained diffraction grating 1 is different from the first embodiment in the first direction A.
Is flat along.

【0024】比較例3 本比較例のフォトマスク52の概略図を図11に示す。
ここでは、第1および第2の方向A,Bに沿ってa=5
μmとb=3μmの格子ピッチをもつ二次元パターンが
描かれている。いずれの方向A,Bとも開口部6および
遮光部7は一定のライン幅を持つ。このフォトマスク5
2を用いて、実施例2と同一の特殊感光性樹脂からなる
感光性材料膜およびマスクアライナーを用いて同一の条
件で露光した。その結果、現像後得られたパターンの断
面形状は、図12の通りであり、5μmピッチの第1の
方向Aにおける段差(凸部断面S3:図12(a))に
対して、3μmピッチの第2の方向Bにおける段差(凹
部断面S2:図12(b))は小さく、露光時間、フォ
トマスクと光感光性樹脂の面との間隔、光源とフォトマ
スクの間にスリガラス等の光拡散板を配置し、光線の平
行度を乱す等の露光条件の変更のみで制御することは不
可能であった。
Comparative Example 3 FIG. 11 shows a schematic view of a photomask 52 of this comparative example.
Here, a = 5 along the first and second directions A, B.
A two-dimensional pattern with a grating pitch of μm and b = 3 μm is drawn. In both directions A and B, the opening 6 and the light shield 7 have a constant line width. This photomask 5
2 was exposed under the same conditions using a photosensitive material film made of the same special photosensitive resin and a mask aligner as in Example 2. As a result, the cross-sectional shape of the pattern obtained after development is as shown in FIG. 12, and is 3 μm pitch with respect to the step (projection section S3: FIG. 12A) in the first direction A with 5 μm pitch. The step (recessed section S2: FIG. 12B) in the second direction B is small, and the exposure time, the distance between the photomask and the surface of the photosensitive resin, the light diffusion plate such as frosted glass between the light source and the photomask. However, it was impossible to control by simply changing the exposure conditions, such as disposing the beam and disturbing the parallelism of the light rays.

【0025】なお、上記実施例では正弦波形状の凹凸を
形成する場合を示したが、本発明においては、フォトマ
スクの開口部の形状および間隔、ならびに遮光部の幅の
変化率等を適宜設定することにより、矩形波、台形波な
ど、種々の断面形状の凹凸を形成することができる。
In the above-described embodiment, the case where the sinusoidal unevenness is formed is shown. However, in the present invention, the shape and interval of the opening of the photomask, the rate of change of the width of the light shielding portion, etc. are appropriately set. By doing so, it is possible to form irregularities having various sectional shapes such as a rectangular wave and a trapezoidal wave.

【0026】さらに、上記各実施例で使用した特殊感光
性樹脂はネガ型であるが、ポジ型のフォトレジストを使
用してもよく、その場合、フォトマスクの開口部と遮光
部は、上記各実施例とは逆に、光学部品の凹部と凸部の
それぞれに対応する。
Further, although the special photosensitive resin used in each of the above-mentioned embodiments is a negative type, a positive type photoresist may be used, and in that case, the opening portion and the light shielding portion of the photomask have the above-mentioned respective types. Contrary to the embodiment, it corresponds to each of the concave portion and the convex portion of the optical component.

【0027】また、本発明は、回折格子のほか、ホログ
ラムのような他の光学部品の製造にも適用できる。
The present invention can also be applied to the manufacture of other optical components such as holograms, in addition to diffraction gratings.

【0028】[0028]

【発明の効果】以上説明したとおり、本発明の透過率変
調型フォトマスクを用いれば、1回の露光によって二軸
方向の凹凸パターンをもつ光学部品を作製することがで
きるので、生産性が著しく向上する。また、フォトマス
クの開口部の形状および間隔、ならびに遮光部の幅の変
化率を適宜設定することにより、種々の断面形状の凹凸
を得ることができる。
As described above, by using the transmittance modulation type photomask of the present invention, it is possible to manufacture an optical component having a biaxial concave-convex pattern by a single exposure, so that the productivity is remarkably increased. improves. Further, by appropriately setting the shape and spacing of the openings of the photomask and the change rate of the width of the light shielding portion, it is possible to obtain irregularities having various cross-sectional shapes.

【0029】さらに、本発明のマスクパターンは、通常
のクロムエッチング等の方法で形成できるので、作製が
極めて容易である。
Further, since the mask pattern of the present invention can be formed by a usual method such as chromium etching, it is extremely easy to manufacture.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明に係る透過率変調型フォトマスクの一例
を示す平面図である。
FIG. 1 is a plan view showing an example of a transmittance modulation type photomask according to the present invention.

【図2】図1のフォトマスクのII部を拡大して示す平面
図である。
FIG. 2 is a plan view showing an enlarged part II of the photomask of FIG.

【図3】図1のフォトマスクを用いて光学部品を製造す
る方法を示す側面図である。
FIG. 3 is a side view showing a method of manufacturing an optical component using the photomask of FIG.

【図4】図1のフォトマスクを用いて作製された回折格
子の凹凸形状を示す断面図である。
FIG. 4 is a cross-sectional view showing a concavo-convex shape of a diffraction grating manufactured using the photomask of FIG.

【図5】比較例に係る透過率変調型フォトマスクの一例
を示す平面図である。
FIG. 5 is a plan view showing an example of a transmittance modulation type photomask according to a comparative example.

【図6】図5のフォトマスクを用いて作製された回折格
子の凹凸形状を示す断面図である。
6 is a cross-sectional view showing an uneven shape of a diffraction grating manufactured using the photomask of FIG.

【図7】比較例に係る透過率変調型フォトマスクの他の
例を示す平面図である。
FIG. 7 is a plan view showing another example of the transmittance modulation type photomask according to the comparative example.

【図8】図7のフォトマスクを用いて作製された回折格
子の凹凸形状を示す断面図である。
FIG. 8 is a cross-sectional view showing an uneven shape of a diffraction grating manufactured using the photomask of FIG.

【図9】本発明に係る透過率変調型フォトマスクの他の
例を示す平面図である。
FIG. 9 is a plan view showing another example of the transmittance modulation type photomask according to the present invention.

【図10】図9のフォトマスクを用いて作製された回折
格子の凹凸形状を示す断面図である。
FIG. 10 is a cross-sectional view showing a concavo-convex shape of a diffraction grating manufactured using the photomask of FIG.

【図11】比較例に係る透過率変調型フォトマスクのさ
らに他の例を示す平面図である。
FIG. 11 is a plan view showing still another example of the transmittance modulation type photomask according to the comparative example.

【図12】図11のフォトマスクを用いて作製された回
折格子の凹凸形状を示す断面図である。
12 is a cross-sectional view showing an uneven shape of a diffraction grating manufactured using the photomask of FIG.

【図13】凹凸が2次元的に配列された回折格子を示す
斜視図である。
FIG. 13 is a perspective view showing a diffraction grating in which unevenness is two-dimensionally arranged.

【図14】二軸方向に凹凸パターンをもつ回折格子を示
す斜視図である。
FIG. 14 is a perspective view showing a diffraction grating having a concavo-convex pattern in biaxial directions.

【符合の説明】 1…回折格子(光学部品)、2…凸部、3…凹部、5,
5A…透過率変調型フォトマスク、6,6A,6B…開
口部、7,7A,7B…遮光部、13…基材、15…感
光性材料膜、16…凹凸、A…第1の方向、B…第2の
方向、a,b…所定間隔、W1…幅。
[Description of References] 1 ... Diffraction grating (optical component), 2 ... Convex portion, 3 ... Recessed portion, 5,
5A ... Transmittance modulation type photomask, 6, 6A, 6B ... Opening part, 7, 7A, 7B ... Shading part, 13 ... Base material, 15 ... Photosensitive material film, 16 ... Concavo-convex, A ... First direction, B ... second direction, a, b ... predetermined interval, W1 ... width.

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 開口部と遮光部の組合せによって露光用
の光線の透過率を変化させる透過率変調型フォトマスク
であって、開口部と遮光部が第1および第2の方向に沿
って所定間隔で交互に配置されており、上記第1の方向
に沿って並んだ開口部の間に位置する遮光部は、第1の
方向における幅が、光学部品表面に露光によって形成さ
れるべき凹凸の所定形状に対応して、第2の方向に沿っ
て変化している透過率変調型フォトマスク
1. A transmittance modulation type photomask which changes the transmittance of an exposure light beam by a combination of an opening portion and a light shielding portion, wherein the opening portion and the light shielding portion are predetermined along the first and second directions. The light-shielding portions, which are arranged alternately at intervals and are located between the openings arranged in the first direction, have a width in the first direction that is equal to the unevenness to be formed on the surface of the optical component by exposure. A transmittance modulation type photomask that changes along a second direction in accordance with a predetermined shape
【請求項2】 基材上に多数の凹凸を備えた光学部品を
製造する方法であって、請求項1記載の透過率変調型フ
ォトマスクを用いて基材面上の感光性材料膜に露光し、
上記第1および第2の方向に沿って上記所定間隔で配置
された所定形状の凹凸を形成することを特徴とする光学
部品の製造方法。
2. A method of manufacturing an optical component having a large number of irregularities on a base material, which comprises exposing a photosensitive material film on the surface of the base material using the transmittance-modulated photomask according to claim 1. Then
A method for manufacturing an optical component, comprising forming irregularities of a predetermined shape arranged at the predetermined intervals along the first and second directions.
JP8960992A 1992-03-11 1992-03-11 Transmittance modulation type photomask and production of optical parts by using the same Pending JPH05257261A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8960992A JPH05257261A (en) 1992-03-11 1992-03-11 Transmittance modulation type photomask and production of optical parts by using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8960992A JPH05257261A (en) 1992-03-11 1992-03-11 Transmittance modulation type photomask and production of optical parts by using the same

Publications (1)

Publication Number Publication Date
JPH05257261A true JPH05257261A (en) 1993-10-08

Family

ID=13975496

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8960992A Pending JPH05257261A (en) 1992-03-11 1992-03-11 Transmittance modulation type photomask and production of optical parts by using the same

Country Status (1)

Country Link
JP (1) JPH05257261A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010281946A (en) * 2009-06-03 2010-12-16 Toppan Printing Co Ltd Display body

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010281946A (en) * 2009-06-03 2010-12-16 Toppan Printing Co Ltd Display body

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