JPH0525724U - Ni wire welding pad - Google Patents
Ni wire welding padInfo
- Publication number
- JPH0525724U JPH0525724U JP073099U JP7309991U JPH0525724U JP H0525724 U JPH0525724 U JP H0525724U JP 073099 U JP073099 U JP 073099U JP 7309991 U JP7309991 U JP 7309991U JP H0525724 U JPH0525724 U JP H0525724U
- Authority
- JP
- Japan
- Prior art keywords
- welding pad
- thick film
- linear expansion
- mold case
- wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
(57)【要約】
【構成】合成樹脂から成るモールドケース１内には、溶
接用パッド２が厚膜回路基板３上にはんだ付けされ、モ
ールドケース１内に収納される。厚膜回路基板３の電子
信号を、前記モールドケースに成形支持された板上端子
４と前記溶接用パッド間を、Ｎｉワイヤ５を用い電気的
に接続し外部に取り出す。溶接用パッド２はＦｅ−４２
Ｎｉからなる。
【効果】本考案によれば、溶接用パッドにＦｅ−４２Ｎ
ｉを採用することで、はんだの熱疲労寿命を伸ばすこと
ができる。またＦｅ−Ｎｉ材はＣｕに比較して酸化しに
くいので、保管等に際し湿度管理等の面倒な管理がいら
なくなる。
(57) [Summary] [Structure] A welding pad 2 is soldered on a thick film circuit board 3 in a mold case 1 made of a synthetic resin, and is housed in the mold case 1. The electronic signal of the thick film circuit board 3 is electrically connected between the on-board terminal 4 formed and supported in the mold case and the welding pad by using the Ni wire 5, and taken out to the outside. Welding pad 2 is Fe-42
It consists of Ni. [Effect] According to the present invention, Fe-42N is used as the welding pad.
By adopting i, the thermal fatigue life of the solder can be extended. Further, since the Fe-Ni material is less likely to be oxidized than Cu, troublesome management such as humidity management is unnecessary when storing.
Description
【０００１】[0001]
本考案は電子装置の入出力リード端子の接続構造に係り、特にＮｉ細線と厚膜 導体とを溶接パッドを介して接続する技術に関する。 The present invention relates to a connection structure for input / output lead terminals of an electronic device, and more particularly to a technique for connecting a Ni thin wire and a thick film conductor via a welding pad.
【０００２】[0002]
特開公平1−97817号公報等に示された半導体電子回路のリード端子接合部にお ける溶接用パッドは従来Ｆｅ−Ｎｉ−Ｃｏ材にＣｕクラッドしたものを、厚膜導 体上にはんだ付けし、Ｎｉワイヤを溶接する構造となっていた。 The welding pad at the lead terminal joint of the semiconductor electronic circuit disclosed in Japanese Patent Laid-Open No. Hei 1-97817 is a conventional Fe-Ni-Co material Cu-clad, and is soldered on a thick film conductor. However, the structure is such that the Ni wire is welded.
【０００３】[0003]
上記従来の技術では、ＣｕとＦｅ−Ｎｉ−Ｃｏの融点が異なり、（Ｃｕの融点 １０８３℃、Ｆｅ−Ｎｉ−Ｃｏの融点１４５３℃）加工時の歪とりのための焼鈍 温度が設定しずらい。そのため歪とりのための焼鈍が充分行われず、線膨張係数 が低くなっていた。そのためはんだ付け部の熱疲労寿命が低下するという問題点 があった。またＦｅ−Ｎｉ−Ｃｏ材にＣｕクラッドしているため、切断時にＣｕ クラッドがヒゲ状になるという問題点があった。 In the above conventional technique, the melting points of Cu and Fe-Ni-Co are different, and the annealing temperature for strain relief during processing is difficult to set (Cu melting point 1083 ° C, Fe-Ni-Co melting point 1453 ° C). .. Therefore, annealing for strain relief was not performed sufficiently and the linear expansion coefficient was low. Therefore, there is a problem that the thermal fatigue life of the soldered part is shortened. Further, since the Fe-Ni-Co material is Cu-clad, there is a problem that the Cu-clad becomes a whiskers at the time of cutting.
【０００４】[0004]
上記問題点を解決するため、本考案では溶接用パッドにＦｅ−Ｎｉ材を用い、 Ｃｕクラッドを不要として焼鈍温度を設定し易くし線膨張係数の低下を防げる。 また溶接用パッドを単一部材とすることで、切断時のヒゲを無くすことができる 。またＦｅ−Ｎｉ材はＣｕに比較して酸化しにくいので、保管に際して湿度管理 等の面倒な管理がいらなくなる。Ｆｅ−Ｎｉ材はＦｅ−Ｎｉ−ＣｏＣｕクラッド 材に較べ安価であるため結果的に安価な溶接用パッドを提供できる。 In order to solve the above-mentioned problems, in the present invention, a Fe-Ni material is used for the welding pad, the Cu clad is unnecessary, and the annealing temperature can be easily set to prevent the linear expansion coefficient from decreasing. Also, by using the welding pad as a single member, it is possible to eliminate the beard during cutting. Further, the Fe-Ni material is less likely to be oxidized than Cu, so that troublesome management such as humidity management is not required during storage. The Fe-Ni material is cheaper than the Fe-Ni-CoCu clad material, and as a result, an inexpensive welding pad can be provided.
【０００５】[0005]
この様に構成した本考案によれば、Ｆｅ−Ｎｉ材に適した焼鈍温度が選択でき るので歪の発生を完全に除去することができる。はんだ接続部に生ずる最大相当 歪εは、Ｌをはんだの接続部の距離、溶接用パッドの線膨張係数をα1 、基板の 線膨張係数をα2、はんだ厚さをｈ，温度差をｔ，はんだの線膨張係数をα3とす るとAccording to the present invention having such a configuration, since the annealing temperature suitable for the Fe-Ni material can be selected, the generation of strain can be completely eliminated. The maximum equivalent strain ε that occurs in the solder joint is: L is the distance of the solder joint, the linear expansion coefficient of the welding pad is α 1 , the linear expansion coefficient of the substrate is α 2 , the solder thickness is h, and the temperature difference is t. , If the linear expansion coefficient of the solder is α 3 ,
【０００６】[0006]
【数１】 [Equation 1]
【０００７】 α2，α3、はんだ厚さｈは同一であるからα1 の差によって最大相当歪は依存す る。α1 が小さくなった場合、εは大となり，最大相当歪は増大する。そのため 線膨張係数は小さくならないほうがよい。そのため加工時の歪とりを完全に行っ た場合、はんだ接続部の熱疲労寿命は向上する。Since α 2 , α 3 and solder thickness h are the same, the maximum equivalent strain depends on the difference of α 1 . When α 1 becomes small, ε becomes large and the maximum equivalent strain increases. Therefore, it is better not to reduce the linear expansion coefficient. Therefore, if the strain is removed completely during processing, the thermal fatigue life of the solder joint will be improved.
【０００８】[0008]
以下本考案の一実施例を図１の一部断面図を用いて説明する。合成樹脂から成 るモールドケース１内には、溶接用パッド２が厚膜回路基板３上にはんだ付けさ れ、モールドケース１内に収納される。厚膜回路基板３の電子信号を、前記モー ルドケースに成形支持された板上端子４と前記溶接用パッド間を、Ｎｉワイヤ５ を用い電気的に接続し外部に取り出す。 An embodiment of the present invention will be described below with reference to the partial sectional view of FIG. A welding pad 2 is soldered on a thick film circuit board 3 in a mold case 1 made of a synthetic resin, and is housed in the mold case 1. An electronic signal of the thick film circuit board 3 is electrically connected between the on-board terminal 4 molded and supported in the mold case and the welding pad by using a Ni wire 5, and taken out to the outside.
【０００９】 溶接用パッド２はＦｅ−４２Ｎｉから成るものである。溶接用パッドの製造方 法は、溶解，鍛造，熱間圧延，冷間圧延，焼鈍といった工程で行われる。従来の 溶接用パッドは、Ｃｕクラッドをするため、前記工程の後に冷間圧接，拡散焼鈍 ，圧延，仕上げ焼鈍といった工程が追加される。圧延時の歪をとるための焼鈍は ９００℃×１時間で行われるがＣｕクラッド品は、下部にＣｕクラッドしている ため、熱伝導率及び融点が異なり、焼鈍温度が設定しずらい。そのため線膨張係 数が低下する。図２に線膨張係数と加工率の関係を示す。また図３に標準熱処理 後の線膨張係数を示す。図２に示すように線膨張係数は、加工率６０％で最小と なる。溶接用パッドの加工率は５０％程度あるから、線膨張係数は３.２(×10-6 ／℃）に低下する。それに対して標準加工品は４．８（×１０-6／℃)である。 これを数１に代入し、はんだの線膨張係数を２５（×１０-6／℃）とし、基板の 線膨張係数を６.６（×１０-6／℃)、はんだ厚さを０．１mm、はんだ接続部の距 離を２.０mmとし計算すると、Ｃｕクラッド品の熱歪をε1とし、標準加工品の熱 応力をε2 とすると、ε1はε2の約１．８倍の熱歪をうける。従ってはんだ付け 部の熱疲労寿命は標準加工品の方が向上する。The welding pad 2 is made of Fe-42Ni. Welding pad manufacturing methods include melting, forging, hot rolling, cold rolling, and annealing. Since the conventional welding pad is Cu clad, steps such as cold pressure welding, diffusion annealing, rolling, and finish annealing are added after the above steps. Annealing to remove strain during rolling is performed at 900 ° C for 1 hour, but since the Cu clad product has Cu clad in the lower part, the thermal conductivity and melting point are different, making it difficult to set the annealing temperature. Therefore, the coefficient of linear expansion decreases. FIG. 2 shows the relationship between the coefficient of linear expansion and the processing rate. Figure 3 shows the linear expansion coefficient after standard heat treatment. As shown in FIG. 2, the linear expansion coefficient becomes the minimum at the processing rate of 60%. Since the processing rate of the welding pad is about 50%, the coefficient of linear expansion decreases to 3.2 (× 10 -6 / ° C). On the other hand, the standard processed product is 4.8 (× 10 −6 / ° C.). Substituting this into Equation 1, the linear expansion coefficient of the solder is 25 (× 10 -6 / ° C), the linear expansion coefficient of the substrate is 6.6 (× 10 -6 / ° C), and the solder thickness is 0.1 mm. , is calculated as 2.0mm the distance of the solder connection portion, the thermal distortion of the Cu clad products and epsilon 1, the thermal stress of a standard workpiece and epsilon 2, epsilon 1 is about 1.8 times the epsilon 2 Receives thermal distortion. Therefore, the thermal fatigue life of the soldered part is improved in the standard processed product.
【００１０】[0010]
本考案によれば、溶接用パッドにＦｅ−４２Ｎｉを採用することで、はんだの 熱疲労寿命を伸ばすことができる。またＦｅ−Ｎｉ材はＣｕに比較して酸化しに くいので、保管等に際し湿度管理等の面倒な管理がいらなくなる。Ｆｅ−Ｎｉ材 はＦｅ−Ｎｉ−Ｃｏ材に較べ安価であるため結果的に安価な溶接用パッドを提供 できる。 According to the present invention, the thermal fatigue life of the solder can be extended by using Fe-42Ni for the welding pad. In addition, since the Fe-Ni material is less likely to be oxidized than Cu, it is not necessary to carry out troublesome management such as humidity management during storage. Since the Fe-Ni material is cheaper than the Fe-Ni-Co material, an inexpensive welding pad can be provided as a result.
【図１】本考案の一実施例の断面図である。FIG. 1 is a sectional view of an embodiment of the present invention.
【図２】加工率と線膨張係数の関係図である。FIG. 2 is a relationship diagram between a processing rate and a linear expansion coefficient.
【図３】標準熱処理後の加工率と線膨張係数の関係図で
ある。FIG. 3 is a diagram showing the relationship between the processing rate and the coefficient of linear expansion after standard heat treatment.
１…モールドケース、２…溶接用パッド、３…厚膜回路
基板、４…板上端子、５…Ｎｉワイヤ。1 ... Mold case, 2 ... Welding pad, 3 ... Thick film circuit board, 4 ... Board terminal, 5 ... Ni wire.
Claims (1)
ジングに成形支持される入出力端子と、前記ハウジング
に収納される厚膜導体から成る電子回路を接続するニッ
ケルワイヤを具備する電子装置において、前記ニッケル
ワイヤと前記電子回路を接続するものにおいて、厚膜導
体上にＦｅ−Ｎｉからなるパッドをはんだ付けすること
を特徴とする、Ｎｉワイヤ溶接用パッド。1. An electronic device comprising: a housing made of synthetic resin; an input / output terminal molded and supported by the housing; and a nickel wire for connecting an electronic circuit made of a thick film conductor housed in the housing. A pad for Ni wire welding, characterized in that a pad made of Fe-Ni is soldered on a thick film conductor for connecting a nickel wire and the electronic circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP073099U JPH0525724U (en) | 1991-09-11 | 1991-09-11 | Ni wire welding pad |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP073099U JPH0525724U (en) | 1991-09-11 | 1991-09-11 | Ni wire welding pad |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0525724U true JPH0525724U (en) | 1993-04-02 |
Family
ID=13508545
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP073099U Pending JPH0525724U (en) | 1991-09-11 | 1991-09-11 | Ni wire welding pad |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0525724U (en) |
-
1991
- 1991-09-11 JP JP073099U patent/JPH0525724U/en active Pending
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