JPH0525243Y2 - - Google Patents

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Publication number
JPH0525243Y2
JPH0525243Y2 JP14331289U JP14331289U JPH0525243Y2 JP H0525243 Y2 JPH0525243 Y2 JP H0525243Y2 JP 14331289 U JP14331289 U JP 14331289U JP 14331289 U JP14331289 U JP 14331289U JP H0525243 Y2 JPH0525243 Y2 JP H0525243Y2
Authority
JP
Japan
Prior art keywords
semiconductor wafer
suction
suction cup
cut
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP14331289U
Other languages
Japanese (ja)
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JPH0381638U (en
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Filing date
Publication date
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Priority to JP14331289U priority Critical patent/JPH0525243Y2/ja
Publication of JPH0381638U publication Critical patent/JPH0381638U/ja
Application granted granted Critical
Publication of JPH0525243Y2 publication Critical patent/JPH0525243Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

【考案の詳細な説明】 (産業上の利用分野) この考案は、トランジスター等デイスクリート
用素子を製造するための半導体ウエハを厚き巾の
中心から2分割に切断する際において、切り落さ
れる側の切断半導体ウエハを遅くとも切断終了直
前に吸着して保持する保持装置に関する。
[Detailed description of the invention] (Industrial application field) This invention is used to cut a semiconductor wafer into two parts from the center of a thick width to manufacture discrete elements such as transistors. The present invention relates to a holding device that attracts and holds a cut semiconductor wafer at the latest immediately before cutting is completed.

(従来技術) 既に本願出願人は、不純物の拡散層を形成した
半導体ウエハの片面を吸着盤によつて全面的に吸
着保持した、この半導体ウエハを内周式のダイヤ
モンドカツター等によつて厚さ巾の中心から2分
割に切断する切断工程時において、吸着盤によつ
て強固に保持される側と反対の面の切断半導体ウ
エハを切断終了前に吸着保持して回収せしめる切
断半導体ウエハの保持方法及び装置を提案してい
る(特開昭2−1072号公報)。
(Prior Art) The applicant has already developed a method in which one side of a semiconductor wafer, on which an impurity diffusion layer has been formed, is completely suctioned and held by a suction cup, and this semiconductor wafer is cut into a thickness using an internal diamond cutter or the like. Holding of a cut semiconductor wafer in which the cut semiconductor wafer on the side opposite to the side firmly held by a suction cup is collected by suction before the cutting is completed during the cutting process of cutting the cut semiconductor wafer into two parts from the center of the width. A method and apparatus have been proposed (Japanese Patent Application Laid-open No. 1072/1983).

また、これとは別に、切断半導体ウエハを吸着
保持する装置としては、シリコン半導体インゴツ
トよりウエハを切り出す際において、インゴツト
の端面から切断半導体ウエハが切断される前に該
ウエハを吸着して保持するものがある。
Separately, there is a device for suction-holding a cut semiconductor wafer, which suction-holds the wafer before it is cut from an end face of a silicon semiconductor ingot when the wafer is cut out from the ingot.

そして、上記した各装置は、金属か若しくはセ
ラミツクス製の吸盤体を具備しており、この吸盤
体の吸着面は略平坦状に形成されている。
Each of the devices described above is equipped with a suction cup body made of metal or ceramics, and the suction surface of this suction cup body is formed in a substantially flat shape.

又、吸着面の曲率は変更できるものもあるが、
吸着面中心の垂直線を対称軸として線対称な形状
であつた。
Also, the curvature of the suction surface can be changed in some cases;
The shape was symmetrical with respect to the vertical line at the center of the suction surface as the axis of symmetry.

上記の様な半導体ウエハを切断する際、特に、
両面に不純物を拡散した半導体ウエハを厚さ巾の
中心から2分割する場合においては、ウエハの中
央層の両面の層との性質が異なる事が主因で、ウ
エハの中心部に沿つて切断が開始されるに伴なつ
て吸着盤によつて保持される側と反対の側の切断
半導体ウエハが外側へ向けて徐々に反り始める。
In particular, when cutting semiconductor wafers such as those mentioned above,
When a semiconductor wafer with impurities diffused on both sides is divided into two parts from the center of its thickness, cutting begins along the center of the wafer, mainly because the properties of the central layer of the wafer are different from those of the layers on both sides. As the cutting process progresses, the cut semiconductor wafer on the side opposite to the side held by the suction cup gradually begins to warp outward.

そして、この状態の切断半導体ウエハの表面を
上記した様に平坦状等の吸盤体によつて吸着保持
した時点より、ウエハに対して反りを強制的に修
正する様な負荷力が加わること、及び切断終了前
に切断半導体ウエハを保持する保持装置と切断中
に片面を強固の保持する保持装置との振動系が相
互に異なることを起因として、カツターと交差す
る個所のウエハ周縁にクラツク等が発生してしま
うことがあつた。
Then, from the time when the surface of the cut semiconductor wafer in this state is suctioned and held by the flat suction cup as described above, a load force is applied to the wafer to forcibly correct the warp; Due to the difference in vibration systems between the holding device that holds the cut semiconductor wafer before cutting is completed and the holding device that firmly holds one side during cutting, cracks occur on the wafer periphery where it intersects with the cutter. There was something I ended up doing.

(考案が解決しようとする課題) 本考案の課題は、切断半導体ウエハを切断終了
前に吸着保持する際において、前記の如く反り変
形する切断半導体ウエハに対して無理な負荷力を
与えることなく吸着すると共に、該ウエハとの間
の振動差を吸収して保持する吸着保持構造を提供
して、切断作業中に切断半導体ウエハの周縁部に
生じる破損を防止することである。
(Problem to be Solved by the Invention) The problem to be solved by the invention is to suction and hold the cut semiconductor wafer before the cutting is completed without applying an unreasonable load force to the cut semiconductor wafer, which warps as described above. At the same time, it is an object of the present invention to provide an adsorption/holding structure that absorbs and holds the vibration difference between the semiconductor wafer and the wafer, thereby preventing damage to the peripheral edge of the cut semiconductor wafer during the cutting operation.

(課題を解決する為の手段) 上記した課題を解決する為に本考案の切断半導
体ウエハの保持装置は、腕体の先端に、切断半導
体ウエハの表面に吸着するゴム若しくは軟質合成
樹脂製の吸盤体を複数個配設し、これら吸盤体を
吸引手段に連絡すると共に、各吸盤体のウエハ表
面に対する突出量を調節可能に取付支持したもの
である。
(Means for Solving the Problems) In order to solve the above-mentioned problems, the cutting semiconductor wafer holding device of the present invention has a suction cup made of rubber or soft synthetic resin that sticks to the surface of the cut semiconductor wafer at the tip of the arm body. A plurality of suction cup bodies are disposed, these suction cup bodies are connected to a suction means, and the amount of protrusion of each suction cup body with respect to the wafer surface can be adjusted and supported.

また、複数の吸盤体個々の吸着口縁を切断半導
体ウエハが切断される際に生じる反り曲面に合わ
せて正対させて傾斜する様形成した構造を採用す
る。
Further, a structure is adopted in which the suction opening edges of each of the plurality of suction cups are formed so as to be tilted so as to face each other in accordance with the warped curved surface that occurs when the cut semiconductor wafer is cut.

(作用) 以上の手段によれば、腕体の先端に設けられる
複数の吸盤体は、吸引手段による吸引によつて切
断半導体ウエハ表面の複数の部位に対して夫々吸
着する。
(Function) According to the above means, the plurality of suction cups provided at the tips of the arms are respectively attracted to the plurality of parts on the surface of the cut semiconductor wafer by suction by the suction means.

切断が進むのに平行して切断半導体ウエハは外
側へ向けて徐々に大きく反り変形を生じる。
In parallel with the progress of cutting, the cut semiconductor wafer gradually warps outward to a large extent.

一方、個々の吸盤体は、吸着作用時点にて上記
した様に反り変形するウエハ表面における夫々の
吸着個所の反り変形量に対応させて、その突出量
を調節しておく。これによつて、各吸着盤は反り
変形を生じるウエハ表面に合つた状態で宛がわれ
て吸着し、切断半導体ウエハは反り変形した状態
のままで保持されてウエハに無理な負荷力が加え
られるのが防止される。
On the other hand, the amount of protrusion of each suction cup body is adjusted in accordance with the amount of warp deformation of each suction point on the wafer surface, which warps and deforms as described above at the time of suction action. As a result, each suction cup is aligned with and adsorbs the warped wafer surface, and the cut semiconductor wafer is held in the warped state and an unreasonable load force is applied to the wafer. is prevented.

また、カツターによる切削振動が直接加わるウ
エハと保持装置との間に生じる振動差は吸盤体の
弾性変形によつて吸収される。
In addition, the vibration difference generated between the wafer and the holding device, which is directly subjected to cutting vibration by the cutter, is absorbed by the elastic deformation of the suction cup.

そして、各吸盤体の吸着口縁も予想される切断
半導体ウエハの反り角に合わせて傾斜させること
によつて、夫々の吸盤体は口縁が反り変形する切
断半導体ウエハ表面の各吸着部位に正対する状態
で吸着する。
By slanting the suction mouth edge of each suction cup body in accordance with the expected warping angle of the cut semiconductor wafer, each suction cup body can be positioned precisely at each suction site on the surface of the cut semiconductor wafer where the mouth edge is warped. It adsorbs in the opposite state.

(考案の効果) 以上の様に、本考案の切断半導体ウエハの保持
装置は、ゴム若しくは軟質合成樹脂からなる複数
個の吸盤を設け、該吸盤体の切断半導体ウエハ表
面に対する突出量を調節可能に取付支持したもの
である。従つて、切断時の吸着作用時点において
反り変形していた切断半導体ウエハ表面の吸着部
の反り量に対応させて各吸盤体の突出量を調節
し、これらの吸盤体によつて反り変形する切断半
導体ウエハ表面と適合する吸着面を実現すること
によつて、素材ウエハの前段階拡散処理工程にお
けるロツト毎に異なつた反り変形を生じる切断半
導体ウエハの表面に合せて各吸盤体を段差なく宛
がつて吸着させ、切断半導体ウエハを反り変形し
たままの状態で無理な負荷を与えることなく吸着
保持することができる。
(Effects of the invention) As described above, the holding device for a cut semiconductor wafer of the present invention is provided with a plurality of suction cups made of rubber or soft synthetic resin, and the amount of protrusion of the suction cups from the surface of the cut semiconductor wafer can be adjusted. It is mounted and supported. Therefore, the amount of protrusion of each suction cup body is adjusted in accordance with the amount of warpage of the suction part on the surface of the cut semiconductor wafer, which is warped and deformed at the time of suction action during cutting, and the cutting process is performed by adjusting the amount of protrusion of each suction cup body. By creating a suction surface that matches the surface of the semiconductor wafer, each suction cup can be attached without any steps to match the surface of the cut semiconductor wafer, which undergoes different warping deformation depending on the lot in the pre-diffusion process of the raw material wafer. It is possible to suction and hold the cut semiconductor wafer in a warped and deformed state without applying an unreasonable load.

また、切断時においてカツターによる切削振動
が直接加わる切断半導体ウエハと保持装置との間
の振動差を各吸盤体の弾性によつて吸収すること
ができ、上記した効果お相俟つて切断半導体ウエ
ハの周縁に生じる破損を効果的に防止することが
できる。
In addition, the vibration difference between the cut semiconductor wafer and the holding device, which is directly affected by the cutting vibration caused by the cutter during cutting, can be absorbed by the elasticity of each suction cup. Damage occurring at the periphery can be effectively prevented.

さらに、吸盤体夫々の吸着口縁の形状も切断半
導体ウエハが切断される際に生じる反り角に合わ
せて傾斜することによれば、各吸盤体の吸着口縁
を切断半導体ウエハ表面の各吸着部位に正対させ
て吸着させることができるので、吸着状態におけ
る吸着体の変形も少なく、吸盤体による吸着を確
実に行なうと共に、ウエハに与える負荷力も低減
することができる。
Furthermore, since the shape of the suction mouth edge of each suction cup body is inclined according to the warp angle that occurs when the cut semiconductor wafer is cut, the suction mouth edge of each suction cup body can be adjusted to each suction area on the surface of the cut semiconductor wafer. Since the wafer can be suctioned while directly facing the wafer, there is little deformation of the suction body in the suction state, and the suction by the suction cup can be performed reliably, and the load force applied to the wafer can be reduced.

(実施例) 以下、本考案の一実施例を図面に基づいて説明
する、 半導体ウエハWは、シリコン単結晶の円板形等
からなり、中央部に不純物が拡散されていない不
純物未拡散層を有し両面に不純物が拡散された不
純物拡散層を形成してある。第4図は上記した如
き半導体ウエハWを、内周式カツターCによつて
その厚さ中心から2分割に切断している最中の状
態を誇張して示したもので、ウエハW両面の拡散
層とウエハ中央部の層との性質が異なることから
切断開始から外側へ向けて反り始め、切断終了の
直前まで反り量Bがmm単位までになつていること
を示している。
(Example) An example of the present invention will be described below with reference to the drawings. The semiconductor wafer W is made of a disc-shaped silicon single crystal, etc., and has an impurity undiffused layer in the center where impurities are not diffused. Impurity diffusion layers in which impurities are diffused are formed on both sides. FIG. 4 is an exaggerated view of the state in which the semiconductor wafer W as described above is being cut into two parts from the center of its thickness by the inner cutter C. Since the properties of the layer and the layer at the center of the wafer are different, the curve begins to warp outward from the start of cutting, and the amount of warp B reaches the mm level just before the end of cutting.

尚、上記半導体ウエハW下部周縁に形成される
補強材Dは切断終端となるウエハ下部周縁が破損
するのを防止する為の一例であり、ウエハ周縁に
凹設した溝内にエポキシ等の樹脂を充填硬化させ
て形成してある。
The reinforcing material D formed on the lower periphery of the semiconductor wafer W is an example of the purpose of preventing the lower periphery of the wafer, which is the end of cutting, from being damaged. It is formed by filling and hardening.

半導体ウエハWを実際に2分割切断する際には
半導体ウエハWの片面の略全面を多孔質セラミツ
クス製等の吸着盤7によつて強固に吸引保持する
ので、前記した半導体ウエハWの反り変形bは上
記吸着盤7によつて保持される側の切断半導体ウ
エハW′とは反対側の切断半導体ウエハW″だけに
発生する(第1図)。
When the semiconductor wafer W is actually cut into two parts, substantially the entire surface of one side of the semiconductor wafer W is strongly sucked and held by the suction cup 7 made of porous ceramics or the like, so that the warpage deformation b of the semiconductor wafer W described above is avoided. This occurs only on the cut semiconductor wafer W'' on the side opposite to the cut semiconductor wafer W' on the side held by the suction cup 7 (FIG. 1).

保持装置Aは、上記した様に反り変形を生じる
切断半導体ウエハW″を切断終了前に吸着保持し、
切断後に移動して回収装置(図示せず)に受け渡
するものであり、吸引装置(図示せず)に連絡す
る腕体1の先端部に複数個、この実施例では3個
の吸盤体2が設けてある。
The holding device A holds the cut semiconductor wafer W'' which is warped as described above by suction before the cutting is finished.
After cutting, the suction cup 2 is moved and delivered to a collection device (not shown), and a plurality of suction cup bodies 2, three in this embodiment, are attached to the tip of the arm body 1 that communicates with the suction device (not shown). is provided.

腕体1は吸引装置に連絡する基管1aの先端に
Y字形に分岐する中空状のY字管1bを接続して
成る。Y字管1bは上方へ向けて2本に分岐する
先端を閉塞することにより管の内部空間を通気路
1b′として構成してある。そして、2本の先端部
と基部との3個所の一側に吸盤体2を夫々一側方
向へ向けて取付け、これらの吸盤体2がY字管1
bの分岐点を中心とする円弧E上に配置されると
共に、各吸盤体2の吸着面が同一平面上より上下
して突出高さを調整できる。
The arm body 1 is formed by connecting a hollow Y-shaped tube 1b that branches into a Y-shape to the tip of a base tube 1a that communicates with a suction device. The Y-shaped tube 1b is configured to have an internal space as a ventilation path 1b' by closing the ends which branch into two upwards. Then, the suction cup bodies 2 are attached to one side of the three points, the two tip ends and the base, respectively, facing one side, and these suction cup bodies 2 are attached to the Y-shaped pipe 1.
The suction cup 2 is arranged on an arc E centering on the branch point b, and the suction surface of each suction cup 2 can be raised or lowered from the same plane to adjust the protrusion height.

第3図にて示す様に、吸盤体2はゴム若しくは
軟質合成樹脂製で、中空状の支軸4の先端部外周
に嵌着固定される皿状部2aと該皿状部の外周に
沿つて突出する吸着口縁部2bとから構成され、
上記吸着口縁部2bは、夫々の吸盤体2が吸着す
る切断半導体ウエハW″の反り角度に合わせて傾
斜する様に形成してある。
As shown in FIG. 3, the suction cup body 2 is made of rubber or soft synthetic resin, and has a dish-shaped part 2a that is fitted and fixed to the outer periphery of the tip of the hollow support shaft 4, and a part that extends along the outer periphery of the dish-shaped part. It is composed of a suction port edge 2b that protrudes,
The suction opening edge 2b is formed to be inclined in accordance with the warp angle of the cut semiconductor wafer W'' that is suctioned by each suction cup body 2.

従つて、上方2個の吸盤体2の吸着口縁部2b
は傾斜角度を比較的大きく形成し、また、下方の
吸盤体2のそれは小さくしてある(第3図のd参
照)。これによつて、各吸盤体2が反り変形する
切断半導体ウエハW″表面の吸着面に対して略正
対して吸着する様になる。吸盤体2の吸着口縁部
2bを上記した様に立ち上げる様に突出させるこ
とによれば、確実な吸着性が得られ、振動吸収特
性も良好なものとなる。
Therefore, the suction opening edges 2b of the upper two suction cup bodies 2
The angle of inclination is relatively large, and the angle of inclination of the lower suction cup 2 is made small (see d in Fig. 3). As a result, each suction cup body 2 comes to be attracted to the suction surface of the warped and deformed cut semiconductor wafer W'' surface approximately directly facing the suction surface. By protruding upward, reliable adhesion can be obtained and vibration absorption properties can also be improved.

各吸盤体2の支軸4は夫々腕体1のY字管1b
外周に螺着して固定されるボス部材6の嵌挿孔6
a内に対して摺動嵌合して取付け支持してある。
また、支軸4外周に形成した鍔部4aとボス部材
6端面との間にコイルスプリング3を弾装すると
共に、上記鍔部4aの外側に嵌合させた袋ナツト
5をボス部材6の外周に螺着することによつて、
吸盤体2の支軸4鍔部4aがコイルスプリング3
の弾力によつて袋ナツト5の内部端面に押圧され
ることによつて吸盤体2の停止位置が確実に定め
られ、支持外周に螺着した固定ナツト9を袋ナツ
ト5の先端面に当接させることで吸盤体2の後退
を防止している。
The support shaft 4 of each suction cup body 2 is the Y-shaped tube 1b of the arm body 1, respectively.
A fitting hole 6 for a boss member 6 that is screwed and fixed to the outer periphery.
It is mounted and supported by slidingly fitting into the inside of a.
Further, a coil spring 3 is elastically mounted between a flange 4a formed on the outer periphery of the support shaft 4 and an end face of the boss member 6, and a cap nut 5 fitted on the outside of the flange 4a is attached to the outer periphery of the boss member 6. By screwing into the
The support shaft 4 flange 4a of the suction cup body 2 is a coil spring 3
The stopping position of the suction cup 2 is reliably determined by being pressed against the inner end surface of the cap nut 5 by the elasticity of the suction cup 2, and the fixing nut 9 screwed onto the outer periphery of the support is brought into contact with the end surface of the cap nut 5. This prevents the suction cup body 2 from retreating.

また、各吸盤体2の突出量Fは固定ナツトを緩
め袋ナツト5を回動させることによつて任意に調
節することができる。各吸盤体2の突出量Fは切
断半導体ウエハW″表面における夫々の吸着個所
の反り量に対応させて沈動方向に適量移動させて
おくものであり、曲面は3個の吸盤体2によつて
代表されている。
Further, the protrusion amount F of each suction cup body 2 can be arbitrarily adjusted by loosening the fixing nut and rotating the cap nut 5. The amount of protrusion F of each suction cup 2 is made to move an appropriate amount in the sinking direction in accordance with the amount of warpage of each suction point on the surface of the cut semiconductor wafer W''. It is represented by

上記の様に取付支持された各吸盤体2は支軸4
及びボス部材6内の通路8を介してY字管1b内
の通気路1b′に連通して、吸引装置(図示せず)
からの負圧が加えられる様になつている。
Each suction cup body 2 mounted and supported as described above has a support shaft 4
and a suction device (not shown) that communicates with the ventilation passage 1b' in the Y-shaped tube 1b via the passage 8 in the boss member 6.
Negative pressure is applied from the

以上の様に構成される保持装置Aは、一般的ワ
ーク移動の切断方式では腕体1及び各吸盤体2が
吸着盤7によつて保持される半導体ウエハWと平
行移動する様に支持するものであり、上記半導体
ウエハWを内周式カツターCによつて厚さ巾中心
を上から下に向けて2分割に切断する際におい
て、ウエハWが2分割に切断される幾分前に、外
側に反り変形する切断半導体ウエハW″の表面を
吸着保持する。
The holding device A configured as described above supports the arm body 1 and each suction cup body 2 so as to move in parallel with the semiconductor wafer W held by the suction cup 7 in a general cutting method for moving a workpiece. When cutting the semiconductor wafer W into two parts from the top to the bottom with the center of the thickness width using the inner circumferential cutter C, some time before the wafer W is cut into two parts, the outside The surface of the cut semiconductor wafer W'', which is warped and deformed, is held by suction.

3個の吸盤体2はこれらを結ぶ円弧Eの中心が
半導体ウエハWの中心と一致させるか、又は中心
より幾分上方に位置する状態で切断半導体ウエハ
W″の表面に対して吸着する。この時、切断半導
体ウエハW″は第1図にて示す様に外側に向けて
反り変形を生じているが、前記した様に上方2個
の吸盤体2の突出量Fを吸着個所における切断半
導体ウエハW″の反り量に基づいて下方の吸盤体
2よりも沈動方向に移動調整しておくことによつ
て、3個の吸盤体2は反り変形を生じて湾曲する
切断半導体ウエハW″の表面形状に沿つて段差な
く宛がわれる。また、各吸盤体2の吸着口縁部2
bはこれらが吸着する切断半導体ウエハ表面の略
平均の反り角に合わせて傾斜させてあるので(第
3図中のd)、各吸盤体2の吸着口が夫々ウエハ
W″の表面に正対して吸着されるため、従来のも
のの様にウエハW″の反りを強制的に曲げ戻す様
な無理な負荷力が加えられるのが防止される。
The three suction cup bodies 2 cut the semiconductor wafer so that the center of the arc E connecting them coincides with the center of the semiconductor wafer W, or is located slightly above the center.
At this time, the cut semiconductor wafer W'' is warped outward as shown in FIG. By adjusting the amount of protrusion F of the three suction cup bodies 2 in the direction of sinking relative to the lower suction cup body 2 based on the amount of warpage of the cut semiconductor wafer W'' at the suction point, the three suction cup bodies 2 can prevent warpage deformation. The cut semiconductor wafer W'' is placed without any step along the surface shape of the cut semiconductor wafer W'' which is curved. In addition, the suction mouth edge 2 of each suction cup body 2
b are inclined in accordance with the approximately average warp angle of the surface of the cut semiconductor wafer that they adsorb (d in Fig. 3), so that the suction opening of each suction cup 2 is attached to the wafer.
Since it is attracted directly to the surface of the wafer W'', it is possible to prevent the application of an unreasonable load force that would forcibly bend the wafer W'' back, unlike in the conventional case.

さらに、切断中において、切断半導体ウエハ
W″の保持装置はウエハW″を保持する吸着盤7と
は振動系が異なるが、この振動差はゴム若しくは
軟質合成樹脂からなる吸盤体2の弾性によつて吸
収することができ、上記した無理のない保持状態
と合わせて切断半導体ウエハW′,W″の周縁に生
じるクラツク等の破損を効果的に防止することが
できる。
Furthermore, during cutting, the cut semiconductor wafer
The holding device for wafer W'' has a different vibration system from the suction cup 7 that holds the wafer W'', but this vibration difference can be absorbed by the elasticity of the suction cup body 2 made of rubber or soft synthetic resin, as described above. In combination with a comfortable holding state, it is possible to effectively prevent damage such as cracks occurring at the periphery of the cut semiconductor wafers W', W''.

前記した切断半導体ウエハW″の反り変形bは
ウエハW″の切断前の加工形態に伴なつて変化す
るものであり、この為、各吸盤体2の突出量Fは
例えば加工ロツト毎の吸着作用時点での反り変形
具合に対応させて移動調節するものである。
The above-mentioned warping deformation b of the cut semiconductor wafer W'' changes in accordance with the processing form of the wafer W'' before cutting, and therefore, the protrusion amount F of each suction cup 2 depends on the suction effect for each processing lot, for example. The movement is adjusted in accordance with the degree of warp deformation at the time.

さらに、吸盤体の設置個数は通例2個以上で、
さらに、その配置も目的とする半導体ウエハに対
応させて任意に設定するものである。
Furthermore, the number of suction cups installed is usually two or more,
Further, the arrangement thereof can be arbitrarily set depending on the target semiconductor wafer.

尚、本願の保持装置はシリコン半導体インゴツ
トより切り出すウエハの保持に用いることも可能
である。
The holding device of the present invention can also be used to hold a wafer cut from a silicon semiconductor ingot.

又、第5図にて示す保持装置A′の様に、切断
装置の型式に対応させる為、腕体1のY字管1
b′の中心から背面側へ基管1a′を突出させて設け
ることも任意である。
In addition, as shown in the holding device A' shown in FIG. 5, the Y-shaped tube 1 of the arm body 1 is
It is also optional to provide the base tube 1a' to protrude from the center of b' to the back side.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案を実施した保持装置によつて切
断半導体ウエハを吸着保持している状態を示す一
部切欠側面図、第2図は同装置の正面図、第3図
は吸盤体の支持部分を示す縦断面図、第4図は2
分割される半導体ウエハを示す側面図、第5図は
腕体の基管を後方に延出させた保持装置を示す一
部切欠側面図である。 図中、A……保持装置、C……内周式カツタ
ー、F……突出量、W……半導体ウエハ、W″…
…切断半導体ウエハ、1……腕体、2……吸盤
体。
Fig. 1 is a partially cutaway side view showing a state in which a cut semiconductor wafer is suctioned and held by a holding device embodying the present invention, Fig. 2 is a front view of the same device, and Fig. 3 is a support for a suction cup. A longitudinal sectional view showing the part, Figure 4 is 2
FIG. 5 is a side view showing a semiconductor wafer to be divided, and FIG. 5 is a partially cutaway side view showing a holding device in which the base tube of the arm extends rearward. In the figure, A...Holding device, C...Inner circumferential cutter, F...Protrusion amount, W...Semiconductor wafer, W''...
...cut semiconductor wafer, 1...arm body, 2...suction cup body.

Claims (1)

【実用新案登録請求の範囲】 (1) 腕体の先端に、切断半導体ウエハの表面に吸
着するゴム若しくは軟質合成樹脂製の吸盤体を
複数個配設し、これら吸盤体を吸引手段に連絡
すると共に、各吸盤体のウエハ表面に対する突
出量を調節可能に取付支持した切断半導体ウエ
ハの保持装置。 (2) 複数の吸盤体個々の吸着口縁が全体として形
成する曲面を切断半導体ウエハが切断される際
に生じる反り曲面に合わせて正対させて傾斜す
る様形成した請求項1記載の切断半導体ウエハ
の保持装置。
[Scope of Claim for Utility Model Registration] (1) A plurality of suction cup bodies made of rubber or soft synthetic resin are disposed at the tip of the arm body to attract the surface of the cut semiconductor wafer, and these suction cup bodies are connected to a suction means. Also, a holding device for a cut semiconductor wafer, in which the amount of protrusion of each suction cup relative to the wafer surface can be adjusted and supported. (2) The cut semiconductor according to claim 1, wherein the curved surface formed by the suction opening edge of each of the plurality of suction cup bodies as a whole is formed so as to face directly and be inclined in accordance with the warped curved surface that occurs when the cut semiconductor wafer is cut. Wafer holding device.
JP14331289U 1989-12-11 1989-12-11 Expired - Lifetime JPH0525243Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14331289U JPH0525243Y2 (en) 1989-12-11 1989-12-11

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14331289U JPH0525243Y2 (en) 1989-12-11 1989-12-11

Publications (2)

Publication Number Publication Date
JPH0381638U JPH0381638U (en) 1991-08-21
JPH0525243Y2 true JPH0525243Y2 (en) 1993-06-25

Family

ID=31690089

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14331289U Expired - Lifetime JPH0525243Y2 (en) 1989-12-11 1989-12-11

Country Status (1)

Country Link
JP (1) JPH0525243Y2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006216891A (en) * 2005-02-07 2006-08-17 Tokyo Univ Of Agriculture & Technology Manufacturing method of thin-film element structure, and functional base substance therefor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6083749B2 (en) * 2013-07-08 2017-02-22 浜井産業株式会社 Work stripping apparatus and stripping method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006216891A (en) * 2005-02-07 2006-08-17 Tokyo Univ Of Agriculture & Technology Manufacturing method of thin-film element structure, and functional base substance therefor

Also Published As

Publication number Publication date
JPH0381638U (en) 1991-08-21

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