JPH05251540A - Bonding wire inspecting apparatus - Google Patents
Bonding wire inspecting apparatusInfo
- Publication number
- JPH05251540A JPH05251540A JP4048856A JP4885692A JPH05251540A JP H05251540 A JPH05251540 A JP H05251540A JP 4048856 A JP4048856 A JP 4048856A JP 4885692 A JP4885692 A JP 4885692A JP H05251540 A JPH05251540 A JP H05251540A
- Authority
- JP
- Japan
- Prior art keywords
- focus
- bonding wire
- evaluation value
- focus evaluation
- wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/859—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving monitoring, e.g. feedback loop
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/1016—Shape being a cuboid
- H01L2924/10161—Shape being a cuboid with a rectangular active surface
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Wire Bonding (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、ボンディングワイヤ検
査装置に係り、詳しくは、例えば、IC(Integrated C
ircuit)やLSI(Large Scale Integrated circuit)
等の組立工程の分野に用いて好適な、ボンディングワイ
ヤのループ形状を検査するボンディングワイヤ検査装置
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a bonding wire inspection apparatus, and more specifically, for example, IC (Integrated C
ircuit) and LSI (Large Scale Integrated circuit)
The present invention relates to a bonding wire inspecting apparatus suitable for inspecting the loop shape of a bonding wire, which is suitable for use in the field of assembling process.
【0002】近年、LSIの大規模化・高密度化に伴っ
て、信号線の取り出し口であるリードの多ピン化、及び
少ピッチ化が進んでいることから、ICやLSI等の半
導体チップと、パッケージリードとの電気的導通をとる
ためのワイヤボンディング工程においては、ボンディン
グワイヤの本数の増加、ワイヤ間のピッチの減少が図ら
れている。In recent years, as the scale and density of LSIs have increased, the number of pins of leads, which are the outlets for signal lines, and the pitch thereof have become smaller. Therefore, semiconductor chips such as ICs and LSIs have been developed. In the wire bonding process for establishing electrical continuity with the package leads, the number of bonding wires is increasing and the pitch between the wires is decreasing.
【0003】図7にワイヤボンディング後のICパッケ
ージを示す。図中、1はボンディングワイヤ、2はチッ
プ、3はパッド、4はパッケージ内の内部リードであ
る。ワイヤボンディング工程とは、チップ2の電極であ
るパッド3、及び内部リード4を直径20〜30μmの
金線、あるいはアルミニウム線からなるボンディングワ
イヤ1で接続する工程であり、ワイヤボンディング後の
ボンディングワイヤ1は、図8に示すように、弛み過ぎ
(同図(a)参照)、垂れ下がり(同図(b)参照)、
張り過ぎ(同図(c)参照)等の欠陥があってはならな
い。なお、同図(d)は正常なボンディングワイヤのル
ープ形状を示す。FIG. 7 shows an IC package after wire bonding. In the figure, 1 is a bonding wire, 2 is a chip, 3 is a pad, and 4 is an internal lead in a package. The wire bonding step is a step of connecting the pad 3 which is the electrode of the chip 2 and the internal lead 4 with the bonding wire 1 made of a gold wire or an aluminum wire having a diameter of 20 to 30 μm, and the bonding wire 1 after the wire bonding. Is too loose (see FIG. 8A), drooping (see FIG. 8B), as shown in FIG.
It must not have any defects such as overtension (see Figure (c)). It should be noted that FIG. 3D shows a normal bonding wire loop shape.
【0004】ここで、ICのチップ2の大きさは、小さ
なもので1mm角程度のものから、大きなもので10m
m角程度のものまであり、1個のICにおけるワイヤ数
は数本から、超LSIと呼ばれるもののように、400
〜500本のものもある。また、ワイヤループの高さ
は、一般に、チップ面から200〜400μm程度であ
る。The size of the IC chip 2 is about 1 mm square for small ones and 10 m for large ones.
There are up to m-square, and the number of wires in one IC is from a few wires to 400, like the one called VLSI.
Some are up to 500. Further, the height of the wire loop is generally about 200 to 400 μm from the chip surface.
【0005】したがって、直径20〜30μm、長さ約
2mm程度の金、またはアルミニウムからなるワイヤが
約100μm間隔で数100本のチップから周囲の内部
リード4にボンディングされていることから、目視によ
る検査の場合、作業者は顕微鏡下でボンディングワイヤ
のループ形状を検査することとなるために、例えば、作
業者の単純作業に起因する疲労や、微細な繰り返しワイ
ヤ等により欠陥を見逃すおそれが高くなってきており、
目視検査に代わるボンディングワイヤの外観検査が要求
される。Therefore, a wire made of gold or aluminum having a diameter of 20 to 30 μm and a length of about 2 mm is bonded to the surrounding inner leads 4 from several hundred chips at intervals of about 100 μm. In this case, since the operator inspects the loop shape of the bonding wire under a microscope, for example, the fatigue caused by the operator's simple work, and the risk of overlooking defects due to fine repetitive wires, etc. are increasing. And
Visual inspection of bonding wires is required instead of visual inspection.
【0006】[0006]
【従来の技術】従来のこの種のボンディングワイヤ検査
装置におけるワイヤループ形状の検査方法としては、例
えば、図9に示すような方法がある。これは、ボンディ
ングワイヤ検査装置によって、ボンディングワイヤを撮
像する撮像装置の被写界深度を制御することにより、ワ
イヤ像のピントの合う焦点面位置からループ形状を検査
するものである。2. Description of the Related Art As a conventional method for inspecting a wire loop shape in this type of bonding wire inspection apparatus, there is a method as shown in FIG. This is to inspect the loop shape from the focal plane position where the wire image is in focus, by controlling the depth of field of the imaging device that images the bonding wire with the bonding wire inspection device.
【0007】詳しくは、図7に示すように、予め設定さ
れた焦点位置F1 〜F3 に対して、ある任意の2点P,
Qにおけるボンディングワイヤ1の焦点評価値EP ,E
Q がどのくらいであるかということによりボンディング
ワイヤ1のループ形状を検査するものである。すなわ
ち、前述の弛み過ぎの欠陥は、同図(a)に示すよう
に、点Pにおける焦点評価値EP が焦点評価値EP1を越
えていることから検出され、また、垂れ下がりの欠陥
は、点Qにおける焦点評価値EQ が焦点評価値EQ2より
も低いことから検出され、さらに、張り過ぎの欠陥は、
点Pにおける焦点評価値EP が焦点評価値EP2よりも低
いことことから検出される。More specifically, as shown in FIG. 7, two arbitrary arbitrary points P, P are set with respect to preset focus positions F 1 -F 3 .
Focus evaluation value E P , E of the bonding wire 1 at Q
The loop shape of the bonding wire 1 is inspected based on how much Q is. That is, the above-mentioned excessive slack defect is detected because the focus evaluation value E P at the point P exceeds the focus evaluation value E P1, as shown in FIG. The focus evaluation value E Q at the point Q is detected because it is lower than the focus evaluation value E Q2 .
It is detected because the focus evaluation value E P at the point P is lower than the focus evaluation value E P2 .
【0008】ちなみに、正常なボンディングワイヤのル
ープ形状の場合、点Pにおける焦点評価値EP がEP1<
EP <EP2、点Qにおける焦点評価値EQ がEQ1<EQ
<E Q2の条件を満たす場合である。Incidentally, a normal bonding wire rule
In the case of a loop shape, the focus evaluation value E at the point PPIs EP1<
EP<EP2, Focus evaluation value E at point QQIs EQ1<EQ
<E Q2When the condition of is satisfied.
【0009】[0009]
【発明が解決しようとする課題】しかしながら、このよ
うな従来のボンディングワイヤ検査装置にあっては、予
め設定された焦点位置F1 〜F3 に対して、ある任意の
2点P,Qにおけるボンディングワイヤ1の焦点評価値
EP ,EQ がどのくらいであるかということによりボン
ディングワイヤ1のループ形状を検査するという構成と
なっていたため、ボンディングワイヤのループ形状の欠
陥を大局的に検査する場合には適しているが、ボンディ
ングワイヤの特定部、あるいは全部の高さを精度良く知
ることができないという問題点があった。However, in such a conventional bonding wire inspecting apparatus, bonding at arbitrary two points P and Q with respect to preset focus positions F 1 to F 3 is performed. Since the loop shape of the bonding wire 1 is inspected based on how much the focus evaluation values E P and E Q of the wire 1 are, it is possible to globally inspect defects in the loop shape of the bonding wire. Is suitable, but there is a problem in that it is not possible to accurately know the height of a specific portion or the entire bonding wire.
【0010】すなわち、従来法では、点P(点Q)にお
けるボンディングワイヤ1の焦点評価値EP (EQ )が
焦点評価値EP1(EQ1),EP2(EQ2),EP3(EQ3)
に対してどの範囲に属するかという程度までしか高さ量
を知ることができなかった。そこで、ある任意の点Rで
高さを精度良く知るためには、図10に示すように、比
較対象となる高さを従来の3点から増やす(この場合、
点R上にn個設定)ことが考えられるが、そうすると、
ボンディングワイヤ1の全部の高さを精度良く知るため
には多数の撮像を行わなければならなくなり(測定点×
比較高さ数)、1回の撮像に要する時間は決まっている
ことから撮像回数が増えると検査時間も増大するため、
実用的ではない。That is, in the conventional method, the focus evaluation value E P (E Q ) of the bonding wire 1 at the point P (point Q ) is the focus evaluation values E P1 (E Q1 ), E P2 (E Q2 ), E P3 ( E Q3 )
On the other hand, the height amount could only be known to the extent to which it belongs. Therefore, in order to accurately know the height at an arbitrary point R, the height to be compared is increased from the conventional three points as shown in FIG. 10 (in this case,
It is conceivable that n pieces are set on the point R).
In order to know the total height of the bonding wire 1 with high accuracy, many images must be taken (measurement point x
(Comparative height number) Since the time required for one imaging is fixed, the inspection time increases as the number of imaging increases.
Not practical.
【0011】[目的]そこで本発明は、少ない撮像回数
で精度良く高さ量を検出するボンディングワイヤ検査装
置を提供することを目的としている。[Purpose] Therefore, an object of the present invention is to provide a bonding wire inspection apparatus which detects the height amount with high accuracy by a small number of times of imaging.
【0012】[0012]
【課題を解決するための手段】本発明によるボンディン
グワイヤ検査装置は上記目的達成のため、所定の焦点面
位置におけるボンディングワイヤを撮像する撮像手段
と、該ボンディングワイヤの撮像画像に基づいて該焦点
面位置における合焦点度合を焦点評価値として算出する
焦点評価値算出手段と、該焦点評価値算出手段によって
算出された焦点評価値と、実際の焦点位置との関係を分
布情報として格納する分布情報格納手段と、該分布情報
格納手段に格納された分布情報に基づいて、検査対象と
なるボンディングワイヤを複数焦点面位置にて撮像して
得られる焦点評価値から該ボンディングワイヤのワイヤ
ループの高さを演算する高さ演算手段とを備えるように
構成している。In order to achieve the above object, a bonding wire inspection apparatus according to the present invention has an image pickup means for picking up an image of a bonding wire at a predetermined focal plane position, and the focal plane based on the picked-up image of the bonding wire. Focus evaluation value calculation means for calculating a focus degree at a position as a focus evaluation value, and distribution information storage for storing the relationship between the focus evaluation value calculated by the focus evaluation value calculation means and the actual focus position as distribution information. And a focus evaluation value obtained by imaging the bonding wire to be inspected at a plurality of focal plane positions based on the distribution information stored in the distribution information storage means and the height of the wire loop of the bonding wire. It is configured to include a height calculating means for calculating.
【0013】なお、高さ演算手段は、前記検査対象とな
るボンディングワイヤの複数焦点面位置にて撮像して得
られた各焦点評価値に基づいて、前記分布情報格納手段
に格納された分布情報における分布カーブを焦点位置に
対してスライドさせ、複数焦点面位置で算出した焦点評
価値と、各焦点面位置での該分布情報との差の総和が最
小となった該分布情報における焦点位置と特定点とから
ワイヤの高さを求めるように構成することが有効であ
り、この場合、前記複数焦点面位置での検査対象となる
ボンディングワイヤの各焦点評価値における最外郭焦点
位置の焦点評価値と、該焦点位置に対応する前記分布情
報との差の大小から前記分布カーブをスライドさせる方
向を決定することが好ましい。The height calculation means stores the distribution information stored in the distribution information storage means on the basis of each focus evaluation value obtained by picking up images at a plurality of focal plane positions of the bonding wire to be inspected. By sliding the distribution curve at the focal position, and the focus evaluation value calculated at a plurality of focal plane positions, and the focal position in the distribution information at which the sum of the differences between the distribution information at each focal plane position is the minimum. It is effective to obtain the height of the wire from the specific point, and in this case, the focus evaluation value of the outermost focus position in each focus evaluation value of the bonding wire to be inspected at the multiple focal plane positions. It is preferable that the direction in which the distribution curve is slid is determined based on the magnitude of the difference between the distribution information and the distribution information corresponding to the focus position.
【0014】[0014]
【作用】本発明では、予め求められたボンディングワイ
ヤの焦点評価値と焦点位置との分布情報より、少数の焦
点位置で正確にボンディングワイヤの絶対高さが求めら
れる。すなわち、少ない撮像回数でワイヤループの高さ
量が正確に検出され、ボンディングワイヤのループ形状
が精度良く検査される。According to the present invention, the absolute height of the bonding wire can be accurately obtained at a small number of focal positions from the distribution information of the focal point evaluation value and the focal position of the bonding wire obtained in advance. That is, the height of the wire loop is accurately detected with a small number of times of imaging, and the loop shape of the bonding wire is accurately inspected.
【0015】[0015]
【実施例】以下、本発明を図面に基づいて説明する。図
1は本発明に係るボンディングワイヤ検査装置の一実施
例を示す図であり、本実施例の概略構成を示す図であ
る。まず、構成を説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the drawings. FIG. 1 is a diagram showing an embodiment of a bonding wire inspection apparatus according to the present invention, and is a diagram showing a schematic configuration of the present embodiment. First, the configuration will be described.
【0016】本実施例のボンディングワイヤ検査装置
は、大別して、撮像手段であるカメラ11、焦点評価値
算出手段である焦点評価値算出回路12、分布情報格納
手段である画像処理メモリ13、高さ演算手段である演
算回路14、照明手段15からなり、照明手段15は、
光源16、光照射部17、集光部18から構成されてい
る。The bonding wire inspection apparatus of this embodiment is roughly classified into a camera 11 as an image pickup means, a focus evaluation value calculation circuit 12 as a focus evaluation value calculation means, an image processing memory 13 as a distribution information storage means, and a height. The arithmetic circuit 14 is an arithmetic means, and the illuminating means 15 is provided.
The light source 16, the light irradiation unit 17, and the light condensing unit 18 are included.
【0017】なお、図中、Sは検査対象物である。検査
に用いる焦点評価値分布は、図10に示すように、任意
の点における焦点位置を細かく変化させることで、ボン
ディングワイヤ1の高さと焦点評価値との関係を予め求
めておく。図2はボンディングワイヤの焦点評価値と、
各高さに対する焦点位置との関係を示す図である。In the figure, S is an inspection object. As for the focus evaluation value distribution used for the inspection, the relationship between the height of the bonding wire 1 and the focus evaluation value is obtained in advance by finely changing the focus position at an arbitrary point, as shown in FIG. Figure 2 shows the focus evaluation value of the bonding wire,
It is a figure which shows the relationship with the focus position with respect to each height.
【0018】ここで注意しなければならないことは、焦
点評価値と焦点位置との関係は、図3に示すような正規
分布にはならないということである。正規分布の場合で
あれば、数式から分布の中心、つまり、合焦点位置を算
出することは容易であるが、実際の焦点評価値の分布
は、図2に示すように、カメラ11内の結像レンズの焦
点が合う範囲、すなわち、被写界深度が存在するため、
また、ちょうどピントの合う位置から前後での分布が対
象性を示さないために、焦点評価値の分布を正規分布と
仮定して中心を算出しようとすると、大幅な誤差を生じ
る。It should be noted here that the relationship between the focus evaluation value and the focus position does not have a normal distribution as shown in FIG. In the case of the normal distribution, it is easy to calculate the center of the distribution, that is, the in-focus position by using a mathematical expression, but the actual distribution of focus evaluation values is as shown in FIG. Since there is a range where the image lens is in focus, that is, there is a depth of field,
In addition, since the distribution just before and after the focus position does not show symmetry, if the distribution of focus evaluation values is assumed to be a normal distribution and the center is calculated, a large error occurs.
【0019】そこで本実施例では、図2に示す焦点評価
値分布を実際の焦点評価値に当てはめることにより対処
している。次に作用を説明する。まず、検査対象物Sが
図示しない搬送装置によってカメラ11の真下に送ら
れ、カメラ11により、図9と同様に、焦点位置F1 〜
F3 の3箇所で検査対象物Sにおけるボンディングワイ
ヤ1が撮像される。Therefore, in the present embodiment, the focus evaluation value distribution shown in FIG. 2 is applied to the actual focus evaluation value to cope with the problem. Next, the operation will be described. First, the inspection object S is sent to a position right below the camera 11 by a transport device (not shown), and the camera 11 causes the focus positions F 1 to
The bonding wire 1 on the inspection object S is imaged at three locations F 3 .
【0020】次に、図4に示すように、高さを検出した
い所定の位置での各焦点位置F1 〜F3 に対する焦点評
価値E1 〜E3 が焦点評価値算出回路12によって算出
され、焦点評価値分布に、この焦点評価値E1 〜E3 が
当てはまるように走査され、この分布の中心位置がワイ
ヤ高さHとされる。ちなみに、図4において、ワイヤ高
さHは、焦点位置F2 から距離Dだけ離れた位置にある
ことがわかる。Next, as shown in FIG. 4, the focus evaluation values E 1 to E 3 for the respective focus positions F 1 to F 3 at predetermined positions where the height is to be detected are calculated by the focus evaluation value calculation circuit 12. The focus evaluation value distribution is scanned so that the focus evaluation values E 1 to E 3 are applied, and the center position of the distribution is set as the wire height H. Incidentally, in FIG. 4, it can be seen that the wire height H is at a position separated from the focal position F 2 by the distance D.
【0021】図5,6は焦点評価値分布の当てはめ方法
を説明するための図である。図5は実際の焦点評価値よ
りも焦点評価値分布が左にずれている状態を示すもので
あり、この状態において、焦点評価値分布を走査する方
向は、各焦点位置F 1 〜F3 でのボンディングワイヤ1
の各焦点評価値E1 〜E3 における最外郭焦点位置
F1 ,F3 の焦点評価値E1 ,E3 と、最外郭焦点位置
F1 ,F3 に対応する焦点評価値分布での焦点評価値E
1 ',E3 'との差dE1 ,dE3 の大小から走査方向が決
定される。FIGS. 5 and 6 show how to fit the focus evaluation value distribution.
It is a figure for explaining. Figure 5 is the actual focus evaluation value
The focus evaluation value distribution is shifted to the left.
Yes, in this state, how to scan the focus evaluation value distribution
Direction is the focus position F 1~ F3Bonding wire 1
Each focus evaluation value E1~ E3Outermost focus position in
F1, F3Focus evaluation value E1, E3And the outermost focus position
F1, F3Focus evaluation value E in the focus evaluation value distribution corresponding to
1 ', E3 'Difference with dE1, DE3The scanning direction is determined by the size of
Is determined.
【0022】すなわち、この場合、−dE1 <dE3 で
あるので、焦点評価値分布の分布カーブが図中、右方向
に走査される。また、焦点評価値分布と、焦点位置F1
〜F3 の3箇所での焦点評価値E1 〜E3 とのずれ度D
IFFは、 DIFF=dE1 +dE2 +dE3 で表すことができ、ずれ度DIFFが最も小さい値とな
ったときに、焦点評価値分布の当てはめが完了したもの
とする。That is, in this case, since -dE 1 <dE 3 , the distribution curve of the focus evaluation value distribution is scanned rightward in the figure. Also, the focus evaluation value distribution and the focus position F 1
Deviation degree D of the focus evaluation value E 1 to E 3 at three positions to F 3
The IFF can be represented by DIFF = dE 1 + dE 2 + dE 3 , and it is assumed that the fitting of the focus evaluation value distribution is completed when the deviation degree DIFF becomes the smallest value.
【0023】図6は実際の焦点評価値よりも焦点評価値
分布が右にずれている状態を示すものであり、この場
合、ボンディングワイヤ1の各焦点評価値E1 〜E3 に
おける最外郭焦点位置F1 ,F3 の焦点評価値E1 ,E
3 と、最外郭焦点位置F1 ,F 3 に対応する焦点評価値
分布での焦点評価値E1 ',E3 'との差dE1 ,dE3 の
大小から、dE1 >−dE3 であるので、焦点評価値分
布の分布カーブが図中、左方向に走査される。FIG. 6 shows the focus evaluation value rather than the actual focus evaluation value.
This shows that the distribution is shifted to the right.
, The focus evaluation value E of the bonding wire 11~ E3To
Outermost focus position F in1, F3Focus evaluation value E1, E
3And the outermost focus position F1, F 3Focus evaluation value corresponding to
Focus evaluation value E in distribution1 ', E3 'Difference with dE1, DE3of
From large to small, dE1> -DE3Therefore, focus evaluation value
The cloth distribution curve is scanned to the left in the figure.
【0024】そして、図5に示す場合と同様に、ずれ度
DIFFが最も小さい値となったときに、焦点評価値分
布の当てはめが完了したものとする。焦点評価値分布の
当てはめが完了すると、演算回路14によってワイヤ高
さHが演算され、演算して求めたワイヤ高さHにより、
ワイヤループ形状が図示しないシステムプロセッサによ
って検査される。Then, similarly to the case shown in FIG. 5, it is assumed that the fitting of the focus evaluation value distribution is completed when the deviation degree DIFF becomes the smallest value. When the fitting of the focus evaluation value distribution is completed, the wire height H is calculated by the calculation circuit 14, and the calculated wire height H
The wire loop shape is inspected by a system processor (not shown).
【0025】このように本実施例では、予め求められた
焦点評価値分布に基づいて、少数の焦点位置で正確にボ
ンディングワイヤのワイヤ高さHを求めることができ
る。したがって、少ない撮像回数でワイヤループの高さ
量を正確に検出でき、ボンディングワイヤのループ形状
を精度良く検査できる。なお、上記実施例は計測点を3
点とした場合を例に採り説明したが、これに限らず、計
測点の数は任意である。As described above, in this embodiment, the wire height H of the bonding wire can be accurately obtained at a small number of focus positions based on the focus evaluation value distribution obtained in advance. Therefore, the height of the wire loop can be accurately detected with a small number of times of imaging, and the loop shape of the bonding wire can be inspected with high accuracy. In the above embodiment, the measurement points are set to 3
Although the case has been described as an example, the number is not limited to this, and the number of measurement points is arbitrary.
【0026】また、本実施例における焦点位置を変えて
撮像する手段としては、検査対象物Sとカメラ11との
間に光学的に密な物質を挿入し、この物質の厚みを変え
る方法や、カメラ11を移動して検査対象物Sから遠ざ
けたり、近づけたりする方法や、検査対象物Sを移動す
ることでカメラ11から遠ざけたり、近づけたりする方
法等が考えられる。Further, as means for changing the focal position in this embodiment to take an image, a method of inserting an optically dense substance between the inspection object S and the camera 11 and changing the thickness of this substance, A method of moving the camera 11 away from or closer to the inspection object S, a method of moving the inspection object S away from or closer to the camera 11, and the like can be considered.
【0027】[0027]
【発明の効果】本発明では、予め求められたボンディン
グワイヤの焦点評価値と焦点位置との分布情報に基づい
て、少数の焦点位置で正確にボンディングワイヤの絶対
高さを求めることができる。したがって、少ない撮像回
数でワイヤループの高さ量を正確に検出でき、ボンディ
ングワイヤのループ形状を精度良く検査できる。According to the present invention, the absolute height of the bonding wire can be accurately obtained at a small number of focus positions based on the distribution information of the focus evaluation value and the focus position of the bonding wire obtained in advance. Therefore, the height of the wire loop can be accurately detected with a small number of times of imaging, and the loop shape of the bonding wire can be inspected with high accuracy.
【図1】本実施例の概略構成を示す図である。FIG. 1 is a diagram showing a schematic configuration of a present embodiment.
【図2】ボンディングワイヤの焦点評価値と、各高さに
対する焦点位置との関係を示す図である。FIG. 2 is a diagram showing a relationship between a focus evaluation value of a bonding wire and a focus position for each height.
【図3】正規分布を示す図である。FIG. 3 is a diagram showing a normal distribution.
【図4】本実施例の動作例を説明するための図である。FIG. 4 is a diagram for explaining an operation example of the present embodiment.
【図5】焦点評価値分布の当てはめ方法を説明するため
の図である。FIG. 5 is a diagram for explaining a method of fitting a focus evaluation value distribution.
【図6】焦点評価値分布の当てはめ方法を説明するため
の図である。FIG. 6 is a diagram for explaining a method of fitting a focus evaluation value distribution.
【図7】ワイヤボンディング後のICパッケージの斜視
図である。FIG. 7 is a perspective view of the IC package after wire bonding.
【図8】ボンディングワイヤのループ形状の例を示す図
である。FIG. 8 is a diagram showing an example of a loop shape of a bonding wire.
【図9】従来のボンディングワイヤの検査方法を説明す
るための図である。FIG. 9 is a diagram for explaining a conventional bonding wire inspection method.
【図10】ボンディングワイヤのワイヤ高さを正確に測
定するための一方法を説明するための図である。FIG. 10 is a diagram for explaining one method for accurately measuring the wire height of the bonding wire.
1 ボンディングワイヤ 2 チップ 3 パッド 4 内部リード 11 カメラ(撮像手段) 12 焦点評価値算出回路(焦点評価値算出手段) 13 画像処理メモリ(分布情報格納手段) 14 演算回路(高さ演算手段) 15 照明手段 16 光源 17 光照射部 18 集光部 S 検査対象物 1 bonding wire 2 chip 3 pad 4 internal lead 11 camera (imaging means) 12 focus evaluation value calculation circuit (focus evaluation value calculation means) 13 image processing memory (distribution information storage means) 14 arithmetic circuit (height arithmetic means) 15 lighting Means 16 Light source 17 Light irradiation unit 18 Condensing unit S Inspection target
───────────────────────────────────────────────────── フロントページの続き (72)発明者 安藤 護俊 神奈川県川崎市中原区上小田中1015番地 富士通株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Gotoshi Ando 1015 Kamiodanaka, Nakahara-ku, Kawasaki-shi, Kanagawa Fujitsu Limited
Claims (3)
イヤを撮像する撮像手段と、 該ボンディングワイヤの撮像画像に基づいて該焦点面位
置における合焦点度合を焦点評価値として算出する焦点
評価値算出手段と、 該焦点評価値算出手段によって算出された焦点評価値
と、実際の焦点位置との関係を分布情報として格納する
分布情報格納手段と、 該分布情報格納手段に格納された分布情報に基づいて、
検査対象となるボンディングワイヤを複数焦点面位置に
て撮像して得られる焦点評価値から該ボンディングワイ
ヤのワイヤループの高さを演算する高さ演算手段と、 を備えることを特徴とするボンディングワイヤ検査装
置。1. An image pickup means for picking up an image of a bonding wire at a predetermined focal plane position, and a focus evaluation value calculation means for calculating a degree of in-focus at the focal plane position as a focus evaluation value based on an imaged image of the bonding wire. Based on the distribution information stored in the distribution information storage means, the distribution information storage means storing the relationship between the focus evaluation value calculated by the focus evaluation value calculation means and the actual focus position as distribution information,
Bonding wire inspection, comprising: height calculating means for calculating the height of a wire loop of the bonding wire from focus evaluation values obtained by imaging the bonding wire to be inspected at a plurality of focal plane positions. apparatus.
ボンディングワイヤの複数焦点面位置にて撮像して得ら
れた各焦点評価値に基づいて、前記分布情報格納手段に
格納された分布情報における分布カーブを焦点位置に対
してスライドさせ、複数焦点面位置で算出した焦点評価
値と、各焦点面位置での該分布情報との差の総和が最小
となった該分布情報における焦点位置と特定点とからワ
イヤの高さを求めることを特徴とする請求項1記載のボ
ンディングワイヤ検査装置。2. The height calculation means stores the distribution stored in the distribution information storage means based on each focus evaluation value obtained by imaging at a plurality of focal plane positions of the bonding wire to be inspected. The focus position in the distribution information where the sum of the differences between the focus evaluation values calculated at multiple focus plane positions and the distribution information at each focus plane position is minimized by sliding the distribution curve in the information with respect to the focus position. 2. The bonding wire inspection apparatus according to claim 1, wherein the height of the wire is obtained from the specific point.
ンディングワイヤの各焦点評価値における最外郭焦点位
置の焦点評価値と、該焦点位置に対応する前記分布情報
との差の大小から前記分布カーブをスライドさせる方向
を決定することを特徴とする請求項2記載のボンディン
グワイヤ検査装置。3. The difference between the focus evaluation value of the outermost focus position and the distribution information corresponding to the focus position in each focus evaluation value of the bonding wire to be inspected at the plurality of focal plane positions is determined according to the magnitude of the difference. The bonding wire inspection apparatus according to claim 2, wherein a direction in which the distribution curve is slid is determined.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4048856A JPH05251540A (en) | 1992-03-05 | 1992-03-05 | Bonding wire inspecting apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4048856A JPH05251540A (en) | 1992-03-05 | 1992-03-05 | Bonding wire inspecting apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH05251540A true JPH05251540A (en) | 1993-09-28 |
Family
ID=12814917
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4048856A Withdrawn JPH05251540A (en) | 1992-03-05 | 1992-03-05 | Bonding wire inspecting apparatus |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH05251540A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101028335B1 (en) * | 2009-07-31 | 2011-04-11 | (주) 인텍플러스 | Inspecting apparatus for wire |
-
1992
- 1992-03-05 JP JP4048856A patent/JPH05251540A/en not_active Withdrawn
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101028335B1 (en) * | 2009-07-31 | 2011-04-11 | (주) 인텍플러스 | Inspecting apparatus for wire |
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