JPH05251420A - Cleaning equipment - Google Patents

Cleaning equipment

Info

Publication number
JPH05251420A
JPH05251420A JP8321592A JP8321592A JPH05251420A JP H05251420 A JPH05251420 A JP H05251420A JP 8321592 A JP8321592 A JP 8321592A JP 8321592 A JP8321592 A JP 8321592A JP H05251420 A JPH05251420 A JP H05251420A
Authority
JP
Japan
Prior art keywords
cleaning
wafer
treatment liquid
central
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8321592A
Other languages
Japanese (ja)
Other versions
JP3008001B2 (en
Inventor
Katsutoshi Mokuo
勝利 杢尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Tokyo Electron Kyushu Ltd
Original Assignee
Tokyo Electron Ltd
Tokyo Electron Kyushu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd, Tokyo Electron Kyushu Ltd filed Critical Tokyo Electron Ltd
Priority to JP4083215A priority Critical patent/JP3008001B2/en
Priority to US08/026,016 priority patent/US5327921A/en
Priority to KR1019930003225A priority patent/KR0163362B1/en
Publication of JPH05251420A publication Critical patent/JPH05251420A/en
Application granted granted Critical
Publication of JP3008001B2 publication Critical patent/JP3008001B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PURPOSE:To enhance cleaning efficiency of an object to be cleaned by uniformly straightening the flow of cleaning liquid. CONSTITUTION:A straightening means 5 having a cleaning liquid introducing passage 12 and a bubble escaping passage 13 is formed between a cleaning liquid supply port 2 located at the lower part of a processing tank 1 and a wafer A arranged in the tank 1. The straightening means 5 is constituted of a central straightener 5a disposed above the cleaning liquid supply port 2, and side straighteners 5b extending laterally, while inclining at an angle theta above the central straightener 5a, on the opposite sides of the central straightener 5a through the cleaning liquid introducing passage 12 and forming the bubble escaping passage 13 between the side straightener 5b and the tank 1. According to the constitution, cleaning liquid C fed through the supply port 2 into the tank 1 is distributed to the right and left through the central straightener 5a and passes through the cleaning liquid introducing passage 12 while being straightened. Thus straightened cleaning liquid C then concentrates uniformly to the inner wafer side and cleans the wafer A.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は、洗浄処理装置に関す
るものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cleaning processing apparatus.

【0002】[0002]

【従来の技術】一般に、半導体ウエハの製造プロセスに
おいて、半導体ウエハに付着したダスト等を除去する洗
浄処理は重要な工程の一つとされており、この洗浄処理
の方法として、処理槽内に収容される洗浄処理液中に、
適宜間隔をおいて列設された被処理体を浸漬させて被処
理体の表面を洗浄する方法が広く採用されている。
2. Description of the Related Art Generally, in a semiconductor wafer manufacturing process, a cleaning process for removing dust and the like adhering to the semiconductor wafer is considered to be one of the important steps. In the cleaning solution
A method of cleaning the surface of an object to be processed by immersing the object to be processed arranged in rows at appropriate intervals is widely adopted.

【0003】従来のこの種の洗浄処理装置は、処理槽の
下方部に洗浄処理液の供給口を設け、この洗浄処理液供
給口と、処理槽内に収容される被処理体との間に配設さ
れる例えば石英板製の整流板に多数の小孔を穿設してな
り、そして、洗浄処理液供給口から処理槽内に供給され
る洗浄処理液を整流板の小孔によって分散させながら被
処理体の表面を洗浄する構造となっている(特開昭58
−48423号公報、特開昭58−66333号公報、
特開昭61−59838号公報及び特開昭63−152
237号公報参照)。
A conventional cleaning processing apparatus of this kind is provided with a supply port for a cleaning processing liquid at a lower portion of a processing tank, and the cleaning processing liquid supply port is provided between the cleaning processing liquid supply port and an object to be processed contained in the processing tank. A large number of small holes are formed in the rectifying plate made of, for example, a quartz plate, and the cleaning treatment liquid supplied from the cleaning treatment liquid supply port into the processing tank is dispersed by the small holes in the rectification plate. However, the structure is such that the surface of the object to be processed is cleaned (Japanese Patent Laid-Open No. 58-58).
-48423, JP-A-58-66333,
JP-A-61-59838 and JP-A-63-152
237).

【0004】[0004]

【発明が解決しようとする課題】しかしながら、従来の
この種の洗浄処理装置においては、整流板に穿設された
多数の小孔によって洗浄処理液を整流化するものである
ため、小孔の寸法、位置及び数等を厳密に設定しなけれ
ば洗浄処理液を均一に整流化することが難しいという問
題があり、また、小孔を通過した気泡が被処理体に付着
し、被処理体の品質の低下を招くという虞れもあった。
更に、石英板製の整流板に多数の孔明け加工をすること
は、加工が面倒な上、コストが嵩むという問題もある。
However, in the conventional cleaning processing apparatus of this type, since the cleaning processing liquid is rectified by a large number of small holes formed in the straightening plate, the size of the small holes is small. There is a problem that it is difficult to evenly rectify the cleaning treatment liquid unless the positions, numbers, etc. are set strictly, and the air bubbles that have passed through the small holes adhere to the treatment object, resulting in the quality of the treatment object. There was also a fear that this would lead to a decrease in
Further, when a large number of holes are formed in a rectifying plate made of a quartz plate, there are problems that the process is troublesome and the cost is high.

【0005】この発明は上記事情に鑑みなされたもの
で、洗浄処理液を均一に整流化し、被処理体の洗浄処理
能率を向上させるようにした洗浄処理装置を提供するこ
とを目的とするものである。
The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a cleaning processing apparatus which uniformly rectifies the cleaning processing liquid and improves the cleaning processing efficiency of the object to be processed. is there.

【0006】[0006]

【課題を解決するための手段】上記目的を達成するため
に、この発明の洗浄処理装置は、処理槽内に収容される
洗浄処理液中に被処理体を浸漬させて被処理体の表面を
洗浄する洗浄処理装置において、上記処理槽の下方部に
洗浄処理液の供給口を設け、上記供給口と被処理体との
間に、洗浄処理液の誘導流路と気泡抜き流路を有する整
流手段を形成してなるものである。
In order to achieve the above-mentioned object, the cleaning apparatus of the present invention allows the surface of the object to be processed by immersing the object in the cleaning solution contained in the processing tank. In a cleaning processing apparatus for cleaning, a rectification having a supply port for a cleaning processing liquid at a lower portion of the processing tank, and having a flow path for introducing a cleaning processing liquid and a bubble removing flow path between the supply port and an object to be processed. It is formed by forming means.

【0007】この発明において、上記整流手段は、洗浄
処理液誘導流路と気泡抜き流路を有するものであれば、
1枚の整流板にて形成してもよいが、好ましくは整流手
段を、洗浄処理液供給口の上方に位置する中央整流板
と、この中央整流板の両側辺上方に洗浄処理液誘導流路
を介して側方に延在すると共に、処理槽との間に気泡抜
き流路を形成する上反角を有する側部整流板とで構成す
る方がよい。この場合、側部整流板は各側に1枚であっ
てもよく、あるいは、側部整流板を、互いに洗浄処理液
誘導流路を介して段状に配列される複数の整流板にて形
成したものであってもよい。
In the present invention, if the rectifying means has a cleaning treatment liquid guiding passage and a bubble removing passage,
Although it may be formed by a single flow straightening plate, it is preferable that the flow straightening means is a central straightening plate located above the cleaning processing liquid supply port, and the cleaning processing liquid guiding flow path is provided above both sides of the central straightening plate. It is better to be configured by a side straightening vane that has a dihedral angle and that extends laterally through the above and forms a bubble removal channel with the processing tank. In this case, one side flow plate may be provided on each side, or the side flow plate may be formed of a plurality of flow plates arranged in a stepwise manner with respect to each other through the cleaning treatment liquid guiding passages. It may be the one.

【0008】また、上記側部整流板は平板状であっても
よいが、好ましくは側部整流板の中央側辺部に、洗浄処
理液案内用円弧部を形成してなる方がよい。
The side straightening vane may have a flat plate shape, but it is preferable that the side straightening vane is formed with an arc portion for guiding the cleaning treatment liquid at the central side portion.

【0009】[0009]

【作用】上記のように構成することにより、洗浄処理液
供給口から処理槽内に供給される洗浄処理液は、洗浄処
理液誘導流路を通過することにより整流化されて被処理
体の表面に供給され、被処理体の洗浄処理に供される。
また、洗浄処理液中の含まれる気泡は気泡抜き流路を通
過して被処理体の存在しない位置に案内される。したが
って、洗浄処理液の層流を内側に集中させることがで
き、被処理体の表面に均一に洗浄処理液を供給すること
ができる。しかも、洗浄処理液中の気泡は側方に排出す
ることができるので、被処理体に付着することがない。
With the above configuration, the cleaning treatment liquid supplied from the cleaning treatment liquid supply port into the processing tank is rectified by passing through the cleaning treatment liquid guide passage, and the surface of the object is treated. And is used for cleaning the object to be processed.
Further, the bubbles contained in the cleaning treatment liquid pass through the bubble removal channel and are guided to the position where the object to be treated does not exist. Therefore, the laminar flow of the cleaning treatment liquid can be concentrated inside, and the cleaning treatment liquid can be uniformly supplied to the surface of the target object. Moreover, since the bubbles in the cleaning treatment liquid can be discharged laterally, they do not adhere to the object to be treated.

【0010】また、整流手段を、洗浄処理液供給口の上
方に位置する中央整流板と、この中央整流板の両側辺上
方に洗浄処理液誘導流路を介して側方に延在すると共
に、処理槽との間に気泡抜き流路を形成する上反角を有
する側部整流板とで構成することにより、整流板に洗浄
処理液流路用の小孔を穿設する必要がなく、整流手段を
容易に処理槽内に配設することができる。この場合、側
部整流板を、互いに洗浄処理液誘導流路を介して段状に
配列される複数の整流板にて形成することにより、更に
均一に整流化された洗浄処理液を被処理体に供給するこ
とができる。
In addition, the rectifying means is provided with a central rectifying plate located above the cleaning treatment liquid supply port, and laterally extending above both sides of the central rectifying plate through a cleaning treatment liquid guide passage. By configuring with a side rectifying plate having a dihedral angle that forms a bubble removal flow channel with the processing tank, it is not necessary to form small holes for the cleaning treatment liquid flow channel in the rectifying plate, and rectification is possible. The means can be easily arranged in the processing tank. In this case, the side straightening vanes are formed of a plurality of straightening vanes that are arranged in a stepwise manner through the washing treatment liquid guiding passages, so that the washing treatment liquid that is evenly rectified is treated. Can be supplied to.

【0011】また、側部整流板の中央側辺部に、洗浄処
理液案内用円弧部を形成することにより、洗浄処理液の
流れをより一層整流化させることができる。
Further, the flow of the cleaning treatment liquid can be further rectified by forming the cleaning treatment liquid guiding arc portion on the central side portion of the side rectifying plate.

【0012】[0012]

【実施例】以下にこの発明の実施例を図面に基いて詳細
に説明する。
Embodiments of the present invention will be described below in detail with reference to the drawings.

【0013】◎第一実施例 図1はこの発明の洗浄処理装置の第一実施例の概略断面
図、図2はその要部の断面斜視図が示されている。
First Embodiment FIG. 1 is a schematic sectional view of a first embodiment of the cleaning apparatus of the present invention, and FIG. 2 is a sectional perspective view of the main part thereof.

【0014】この発明の洗浄処理装置は、底部に洗浄処
理液の供給口2を有する処理槽1と、処理槽1内に被処
理体である半導体ウエハA(以下にウエハという)を適
宜間隔をおいて列設保持する昇降可能なウエハ保持アー
ム3と、ウエハ保持アーム3との間で複数枚のウエハA
の授受を司る昇降可能な搬送アーム4と、処理槽1内の
供給口2とウエハAとの間に配設される整流手段5と、
処理槽1内に供給されて溢流(オーバーフロー)した例
えば純水等の洗浄処理液Cを循環供給する循環ポンプ6
とで主要部が構成されている。
In the cleaning processing apparatus of the present invention, a processing tank 1 having a cleaning processing solution supply port 2 at the bottom and a semiconductor wafer A (hereinafter referred to as a wafer) which is an object to be processed in the processing tank 1 are appropriately spaced. A plurality of wafers A are provided between the wafer holding arm 3 and the wafer holding arm 3 that can be raised and lowered in a row and held.
And a transfer arm 4 capable of moving up and down, and a rectifying means 5 arranged between the supply port 2 in the processing tank 1 and the wafer A,
A circulation pump 6 that circulates and supplies the cleaning treatment liquid C, such as pure water, which has been supplied into the treatment tank 1 and overflowed.
The main part consists of and.

【0015】処理槽1は、洗浄処理液Cを収容する内槽
7と、この内槽7の上部外周部に設けられて内槽7から
オーバーフローする洗浄処理液Cを受け止める外槽8と
で構成される全体が箱状となっている。また、外槽8の
底部に設けられた排液口9と、内槽7の底部に設けられ
た供給口2とに接続される循環管路10中に循環ポンプ
6とフィルタ11が接続されている。
The processing tank 1 is composed of an inner tank 7 for containing the cleaning processing liquid C, and an outer tank 8 provided on the outer periphery of the upper portion of the inner tank 7 for receiving the cleaning processing liquid C overflowing from the inner tank 7. The entire box is shaped like a box. In addition, a circulation pump 6 and a filter 11 are connected in a circulation line 10 connected to a drain port 9 provided at the bottom of the outer tank 8 and a supply port 2 provided at the bottom of the inner tank 7. There is.

【0016】整流手段5は、供給口2の上方に位置する
中央整流板5aと、この中央整流板5aの両側辺上方に
洗浄処理液誘導流路12を介して側方に延在すると共
に、内槽7の側面との間に気泡抜き流路13を形成する
上反角θを有する2枚の側部整流板5bとで構成されて
いる。この場合、洗浄処理液誘導流路12の幅は約5〜
10mmに設定され、気泡抜き流路13の幅は約1〜2mm
に設定されている。また、中央整流板5aと側部整流板
5bは、例えば石英板あるいはフッ素樹脂製板等の耐薬
品性を有する矩形板状部材にて形成されている。また、
中央整流板5aは、中央整流板5aの底面の適宜位置に
固着された図示しない脚部によって内槽7の底部に配置
され、側部整流板5bは図示しないスペーサを介して中
央整流板5aとの間に洗浄処理液誘導流路12を形成し
ている。
The rectifying means 5 extends sideways through the cleaning treatment liquid guiding passage 12 above the central rectifying plate 5a located above the supply port 2 and both sides of the central rectifying plate 5a. It is composed of two side straightening vanes 5b having a dihedral angle θ that forms a bubble removing channel 13 between the inner tank 7 and the side surface thereof. In this case, the width of the cleaning treatment liquid guide channel 12 is about 5
It is set to 10 mm, and the width of the bubble removal channel 13 is about 1-2 mm.
Is set to. Further, the central rectifying plate 5a and the side rectifying plate 5b are formed of a rectangular plate member having chemical resistance, such as a quartz plate or a fluororesin plate. Also,
The central straightening vanes 5a are arranged at the bottom of the inner tank 7 by legs (not shown) fixed to appropriate positions on the bottom surface of the central straightening vanes 5a, and the side straightening vanes 5b are connected to the central straightening vanes 5a via spacers (not shown). The cleaning treatment liquid guiding flow path 12 is formed between them.

【0017】なお、ウエハ保持アーム3は、ウエハAの
円弧面を保持する多数の円弧状保持溝3aを列設してな
り、図示しない昇降装置によって処理槽1内に昇降可能
に配設されている。このウエハ保持アーム3との間でウ
エハAの授受を司る搬送アーム4はウエハ保持アーム3
の両側に位置する2本の保持腕4aを具備するフォーク
状に形成され、各保持腕4aにウエハAを保持する円弧
状保持溝4bが多数列設されている。搬送アーム4も図
示しない昇降装置によって処理槽1内においてウエハ保
持アーム3と干渉しない位置で昇降可能に配設されてい
る。このように構成されるウエハ保持アーム3と搬送ア
ーム4とでウエハAの受け渡しを行うには、固定された
ウエハ保持アーム3に対してウエハAを保持した状態の
搬送アーム4を下降させることにより、ウエハAをウエ
ハ保持アーム3に受け渡すことができ、また、ウエハ保
持アーム3に保持されているウエハAを搬送アーム4に
受け渡すには、ウエハ保持アーム3の下方位置に移動し
た搬送アーム4を上昇させることによりウエハ保持アー
ム3上のウエハAを搬送アーム4に受け渡すことができ
る。
The wafer holding arm 3 is formed by arranging a large number of arcuate holding grooves 3a for holding the arcuate surface of the wafer A, and is arranged so as to be able to move up and down in the processing tank 1 by an elevator (not shown). There is. The transfer arm 4 that controls the transfer of the wafer A to and from the wafer holding arm 3 is a wafer holding arm 3.
Is formed in a fork shape having two holding arms 4a located on both sides of the holding arm 4a, and a large number of arcuate holding grooves 4b for holding the wafer A are provided in each holding arm 4a. The transfer arm 4 is also arranged to be movable up and down in the processing tank 1 by a lifting device (not shown) at a position where it does not interfere with the wafer holding arm 3. In order to transfer the wafer A between the wafer holding arm 3 and the transfer arm 4 configured as described above, the transfer arm 4 holding the wafer A with respect to the fixed wafer holding arm 3 is lowered. , The wafer A can be transferred to the wafer holding arm 3, and the wafer A held by the wafer holding arm 3 can be transferred to the transfer arm 4 by moving the transfer arm to a position below the wafer holding arm 3. Wafer A on wafer holding arm 3 can be transferred to transfer arm 4 by raising 4.

【0018】なお、処理槽1の上方には、ウエハ保持ア
ーム3と搬送アーム4との間でウエハAを授受する際
に、ウエハAの保持が確実か否かの検出を行うウエハ確
認検出装置14が設けられている。このウエハ確認検出
装置14は、例えば処理槽1の対向する辺の一方に配設
される発光素子にて形成される発光部15と、対向する
辺側に配設される受光素子にて形成される受光部16と
で構成されている。このように構成されるウエハ確認検
出装置14によれば、ウエハAの授受の際にウエハ保持
アーム3の保持溝3aあるいは搬送アーム4の保持溝4
bに確実にウエハAが保持されない場合には、ウエハA
が浮き上がるか、過度に傾斜するので、この状態をウエ
ハAのオリフラBのずれで検出することができ、ウエハ
Aの脱落やウエハ間の接触等を防止することができる。
Above the processing tank 1, a wafer confirmation / detection device for detecting whether or not the wafer A is reliably held when the wafer A is transferred between the wafer holding arm 3 and the transfer arm 4. 14 are provided. The wafer confirmation / detection device 14 is formed of, for example, a light emitting portion 15 formed by a light emitting element arranged on one of the opposite sides of the processing tank 1 and a light receiving element arranged on the opposite side. And a light receiving section 16 that According to the wafer confirmation / detection device 14 thus configured, the holding groove 3 a of the wafer holding arm 3 or the holding groove 4 of the transfer arm 4 is used when the wafer A is transferred.
If the wafer A is not securely held on the wafer b,
Is lifted or is excessively inclined, this state can be detected by the deviation of the orientation flat B of the wafer A, and the falling of the wafer A and the contact between the wafers can be prevented.

【0019】上記のように構成されるこの発明の洗浄処
理装置において、ウエハA洗浄処理を行うには、まず、
搬送アーム4にて保持されたウエハAをウエハ保持アー
ム3に受け渡して、ウエハ保持アーム3を下降させてウ
エハAを処理槽1内に配設する。そして、循環ポンプ6
を駆動させて図示しない洗浄処理液供給源から洗浄処理
液Cを供給口2から内槽7内に供給する。供給口2から
内槽7に供給された洗浄処理液Cは整流手段5の中央整
流板5aによって左右に振り分けられた後、洗浄処理液
誘導流路12を通過することによりエゼクタ効果によっ
て流速を増して整流化され、ウエハAの表面に均一に供
給されてウエハAの表面の洗浄処理に供される。また、
洗浄処理液C中に含まれる空気はフィルタ11によって
予め空気抜きが行われるが、供給される洗浄処理液中に
残存する空気は整流手段5の側部整流板5bの上反角θ
に沿って移動して気泡抜き流路13から上方に排出され
めるので、ウエハAには気泡が付着する虞れはない。内
槽7内が洗浄処理液Cで満たされると、内槽7内の洗浄
処理液Cはオーバーフローして外槽8に受け止められ、
外槽8内の洗浄処理液Cは循環ポンプ6によって外槽8
の排液口9から再び供給口2に循環供給されて、上述と
同様にウエハAに供給される。この動作を所定時間繰り
返してウエハAの洗浄処理を行うことができる。
In the cleaning processing apparatus of the present invention configured as described above, in order to perform the wafer A cleaning processing, first,
The wafer A held by the transfer arm 4 is transferred to the wafer holding arm 3, and the wafer holding arm 3 is lowered to place the wafer A in the processing tank 1. And the circulation pump 6
Is driven to supply the cleaning treatment liquid C from the not-shown cleaning treatment liquid supply source into the inner tank 7 through the supply port 2. The cleaning treatment liquid C supplied from the supply port 2 to the inner tank 7 is distributed to the left and right by the central rectifying plate 5a of the rectifying means 5, and then passes through the cleaning treatment liquid guiding flow passage 12 to increase the flow rate by the ejector effect. Is rectified and uniformly supplied to the surface of the wafer A to be used for cleaning the surface of the wafer A. Also,
The air contained in the cleaning treatment liquid C is deflated in advance by the filter 11, but the air remaining in the supplied cleaning treatment liquid C is the dihedral angle θ of the side rectifying plate 5b of the rectifying means 5.
There is no possibility that air bubbles will adhere to the wafer A, because the air bubbles can be discharged upward from the air bubble removal channel 13 by moving along. When the inner tank 7 is filled with the cleaning treatment liquid C, the cleaning treatment liquid C in the inner tank 7 overflows and is received by the outer tank 8.
The cleaning treatment liquid C in the outer tank 8 is supplied to the outer tank 8 by the circulation pump 6.
The liquid is again circulated from the drainage port 9 to the supply port 2 and supplied to the wafer A in the same manner as described above. By repeating this operation for a predetermined time, the cleaning process of the wafer A can be performed.

【0020】◎第二実施例 図3はこの発明の洗浄処理装置の第二実施例の要部断面
図が示されている。
Second Embodiment FIG. 3 is a sectional view showing the principal part of a second embodiment of the cleaning processing apparatus of the present invention.

【0021】第二実施例における洗浄処理装置は、整流
手段5に更に整流効果をもたせるようにした場合であ
る。すなわち、側部整流板5bの中央側辺部に、下方側
に向って屈曲する洗浄処理液案内用円弧部17を形成す
ることによって、洗浄処理液誘導流路12を通過した後
の洗浄処理液の流れに広がりをもたせると共に、整流効
果を向上させることができるようにした場合である。
The cleaning apparatus in the second embodiment is a case where the rectifying means 5 is made to have a rectifying effect. That is, the cleaning treatment liquid after passing through the cleaning treatment liquid guiding channel 12 is formed by forming the cleaning treatment liquid guide arc portion 17 that bends downward toward the central side portion of the side rectifying plate 5b. This is a case where the flow is expanded and the rectification effect can be improved.

【0022】また、処理槽1の内槽7における側部整流
板5bと対向する部分に、側部整流板5bの上反角θと
同じ傾斜角を有する段部18を設けて気泡抜き流路13
を形成することにより、洗浄処理液C中の空気を更に確
実に気泡抜き流路13側へ案内することができる。
Further, a step portion 18 having the same inclination angle as the dihedral angle θ of the side straightening vanes 5b is provided in a portion of the inner tank 7 of the processing bath 1 facing the side straightening vanes 5b to provide a bubble removing channel. Thirteen
By forming the above, the air in the cleaning treatment liquid C can be guided to the air bubble removal flow path 13 side more reliably.

【0023】なお、第二実施例において、処理槽1に段
部18を設けて気泡抜き流路13を形成しているが、段
部18を設けずに上記第一実施例と同様に気泡抜き流路
13を形成してもよく、また、第一実施例において処理
槽1に段部18を設けて第二実施例と同様の気泡抜き流
路13を形成してもよい。
In the second embodiment, the step portion 18 is provided in the processing tank 1 to form the bubble removal channel 13, but the step 18 is not provided and the bubble removal is performed in the same manner as in the first embodiment. The flow path 13 may be formed, or the step 18 may be provided in the processing tank 1 in the first embodiment to form the same bubble removal flow path 13 as in the second embodiment.

【0024】また、第二実施例において、その他の部分
は上記第一実施例と同じであるので、同一部分には同一
符号を付して、その説明は省略する。
Since the other parts of the second embodiment are the same as those of the first embodiment, the same parts are designated by the same reference numerals and the description thereof will be omitted.

【0025】◎第三実施例 図4はこの発明の洗浄処理装置の第三実施例の断面図が
示されている。
Third Embodiment FIG. 4 shows a sectional view of a third embodiment of the cleaning apparatus of the present invention.

【0026】第三実施例における洗浄処理装置は、洗浄
処理液の供給を更に均一に整流させるようにした場合で
ある。すなわち、整流手段5の側部整流板5bを、中央
整流板5aとの間に洗浄処理液誘導流路12を介して配
設される第1の側部整流板5cと、この第1の側部整流
板5cとの間に洗浄処理液誘導流路12を介して配設さ
れる第2の側部整流板5dとで段状に構成した場合であ
る。
The cleaning processing apparatus in the third embodiment is one in which the supply of the cleaning processing liquid is made to be more evenly rectified. That is, the side rectifying plate 5b of the rectifying means 5 is provided between the central rectifying plate 5a and the first side rectifying plate 5c via the cleaning treatment liquid guiding flow path 12, and the first side rectifying plate 5c. This is a case where it is configured in a stepwise manner with the second side rectifying plate 5d which is arranged between the partial rectifying plate 5c and the cleaning treatment liquid guiding flow path 12.

【0027】このように側部整流板5bを互いに洗浄処
理液誘導流路12を介して段状に配列される複数の整流
板5c,5dにて形成することにより、供給口2から供
給されて中央整流板5aで振り分けられた洗浄処理液C
を更に複数の洗浄処理液誘導流路12を通過させること
ができるので、洗浄処理液Cを細分化した状態でウエハ
Aに供給することができ、かつ洗浄処理液を更に均一に
清流化することができる。
As described above, the side rectifying plate 5b is formed by the plurality of rectifying plates 5c and 5d which are arranged in a step-like manner with respect to each other through the cleaning treatment liquid guiding flow path 12, so that the side rectifying plate 5b is supplied from the supply port 2. Cleaning treatment liquid C distributed by the central rectifying plate 5a
Since the cleaning treatment liquid C can be further passed through the plurality of cleaning treatment liquid guiding flow paths 12, the cleaning treatment liquid C can be supplied to the wafer A in a subdivided state, and the cleaning treatment liquid can be evenly cleared. You can

【0028】なおこの場合、片側の側部整流板5bが第
1の側部整流板5cと第2の側部整流板5dとで構成さ
れる場合について説明したが、同様に第3、第4等の側
部整流板を多段状に配列することも可能であり、更に細
分化された均一な洗浄処理液Cの供給を行うことができ
る。また、中央整流板5aの幅を狭くするか、あるいは
中央整流板5aの中央部に適宜間隔をおいて小孔(図示
せず)を穿設することによって、洗浄処理液Cを中心側
に供給することができ、更に均一な洗浄処理液Cの供給
を行うこともできる。
In this case, a case has been described in which the one side rectifying plate 5b is composed of the first side rectifying plate 5c and the second side rectifying plate 5d. It is also possible to arrange the side rectifying plates such as the above in a multi-stage manner, and it is possible to supply the cleaning treatment liquid C which is further subdivided and uniform. Further, the cleaning treatment liquid C is supplied to the center side by narrowing the width of the central straightening plate 5a or by forming small holes (not shown) at appropriate intervals in the central portion of the central straightening plate 5a. It is also possible to supply the cleaning treatment liquid C more uniformly.

【0029】なお、第三実施例において、ウエハ保持ア
ーム3は処理槽1内に固定された2本の保持棒にて形成
されており、このウエハ保持アーム3にウエハAを搬送
する部分は、ウエハAの両側の中央部と下部を保持する
4本の保持棒19を有する昇降及び接離移動可能なウエ
ハチャック20にて形成されている。このウエハチャッ
ク20は、図4に想像線で示すように、ウエハチャック
20にてウエハAを把持した状態で、ウエハチャック2
0を処理槽1の上方へ移動し、そして、ウエハチャック
20を下降させてウエハAをウエハ保持アーム3上に載
置した後、ウエハチャック20を外側に離隔して、ウエ
ハAをウエハ保持アーム3上に受け渡すようになってい
る。この場合、ウエハ保持アーム3はなるべく洗浄処理
液Cの流れを邪魔しない位置に配置する方が好ましく、
例えば第1の側部整流板5cの上面に接触させておけ
ば、洗浄処理液Cの流れに支障をきたすことがない。な
おこの場合、ウエハチャック20にて保持されたウエハ
Aは処理槽1の上方位置でウエハ確認検出装置14によ
ってずれや接触の確認が行われるようになっている。
In the third embodiment, the wafer holding arm 3 is formed of two holding rods fixed in the processing tank 1, and the portion for transferring the wafer A to the wafer holding arm 3 is as follows. The wafer chuck 20 is formed of a wafer chuck 20 having four holding rods 19 for holding the central portion and the lower portion on both sides of the wafer A and capable of moving up and down and moving toward and away from the wafer chuck 20. As shown in phantom lines in FIG. 4, the wafer chuck 20 holds the wafer A while the wafer chuck 20 holds the wafer A.
0 is moved above the processing tank 1, and the wafer chuck 20 is lowered to place the wafer A on the wafer holding arm 3. Then, the wafer chuck 20 is separated to the outside, and the wafer A is held on the wafer holding arm. It is supposed to be handed over to 3rd. In this case, it is preferable to arrange the wafer holding arm 3 at a position where it does not disturb the flow of the cleaning treatment liquid C as much as possible.
For example, if the upper surface of the first side straightening vane 5c is contacted, the flow of the cleaning treatment liquid C is not hindered. In this case, the wafer A held by the wafer chuck 20 is checked by the wafer checking / detecting device 14 at a position above the processing tank 1 for displacement and contact.

【0030】なお、第三実施例において、ウエハ保持ア
ーム3を処理槽1に固定し、ウエハ搬送手段をウエハチ
ャック20にて形成した場合について説明したが、この
構造のものに代えて第一実施例の構造としてもよく、あ
るいは、第一実施例の構造のものを第三実施例と同様な
構造としてもよいことは勿論である。
In the third embodiment, the case where the wafer holding arm 3 is fixed to the processing tank 1 and the wafer transfer means is formed by the wafer chuck 20 has been described. However, instead of this structure, the first embodiment is used. Of course, the structure of the example may be adopted, or the structure of the first embodiment may be the same as that of the third embodiment.

【0031】また、第三実施例において、その他の部分
は上記第一実施例及び第二実施例と同じであるので、同
一部分には同一符号を付して、その説明は省略する。
Since the other parts of the third embodiment are the same as those of the first and second embodiments, the same parts are designated by the same reference numerals and the description thereof will be omitted.

【0032】上記のように構成されるこの発明の洗浄処
理装置は、例えば図5に示す洗浄装置の1ユニットとし
て組込まれてウエハの洗浄処理に利用される。
The cleaning processing apparatus of the present invention configured as described above is incorporated, for example, as one unit of the cleaning apparatus shown in FIG. 5 and used for wafer cleaning processing.

【0033】次に、洗浄装置の全体構造を第一実施例の
場合について、図5を参照して説明する。図5は、3つ
の洗浄処理ユニット21,22,23にて洗浄装置を構
成した場合で、搬入側の洗浄処理ユニット21にはロー
ダ24が接続され、搬出側の洗浄処理ユニット23には
アンローダ25が接続されており、更に洗浄処理ユニッ
ト21,22間及び洗浄処理ユニット22,23間に、
3ユニットのいずれかに含まれている処理室の一部を構
成する水中ローダ26が配設されている。
Next, the entire structure of the cleaning apparatus in the case of the first embodiment will be described with reference to FIG. FIG. 5 shows a case where a cleaning device is configured by three cleaning processing units 21, 22, and 23. A loader 24 is connected to the cleaning processing unit 21 on the loading side and an unloader 25 is connected to the cleaning processing unit 23 on the unloading side. Are connected, and further between the cleaning processing units 21 and 22 and between the cleaning processing units 22 and 23,
An underwater loader 26 that constitutes a part of a processing chamber included in any of the three units is provided.

【0034】搬入側の洗浄処理ユニット21は、中心位
置に搬送アーム4を配設する容器40が位置し、その周
囲で容器40の左隣及びローダ24の正面にそれぞれア
ンモニア処理室27及びこの発明の洗浄処理装置(図示
せず)を具備する水洗処理室28が配設されている。中
央の洗浄処理ユニット22は、中心位置に搬送アーム4
を配設する容器40が位置し、その周囲の左右両側に水
中ローダ26を配設し、その間の前後位置にフッ酸処理
室29、水洗オーバーフロー処理室30を配設してな
る。また、搬出側の洗浄処理ユニット23は、中心位置
に搬送アーム4を配設した容器40が位置し、この容器
40の周囲でアンローダ25の正面側には水洗ファイナ
ルリンス処理室31を配設し、容器40の右隣に乾燥処
理室32を配設してなる。
In the cleaning processing unit 21 on the carrying-in side, a container 40 for arranging the transfer arm 4 is located at the center position, and the ammonia processing chamber 27 and the present invention are provided around the container 40 on the left of the container 40 and in front of the loader 24. A water washing processing chamber 28 including the washing processing device (not shown) is provided. The cleaning processing unit 22 at the center has the transfer arm 4 at the center position.
The submersible loader 26 is disposed on both the left and right sides of the container 40, and the hydrofluoric acid treatment chamber 29 and the washing overflow treatment chamber 30 are disposed in the front and rear positions therebetween. Further, in the cleaning processing unit 23 on the unloading side, a container 40 in which the transfer arm 4 is arranged is located at the center position, and a water rinsing final rinse processing chamber 31 is arranged around the container 40 on the front side of the unloader 25. A drying processing chamber 32 is arranged on the right side of the container 40.

【0035】上記のように構成される洗浄装置におい
て、ローダ24に25枚ずつウエハ(図示せず)が載置
されたキャリア33が2つ搬送されてくると、オリフラ
合せ機構34が動作して、キャリア33内のウエハを整
列させ、次いで、突き上げ棒(図示せず)が上方に作動
して、キャリア33をそのままに、ウエハのみを上方に
取り出した後、突き上げ棒が互いに寄合って50枚のウ
エハを等間隔で位置させる。
In the cleaning apparatus constructed as described above, when two carriers 33 each having 25 wafers (not shown) placed on the loader 24 are carried, the orientation flat alignment mechanism 34 operates. , The wafers in the carrier 33 are aligned, and then the push-up bar (not shown) is actuated upward so that the carrier 33 is left as it is and the wafer is taken out upward. The wafers are placed at equal intervals.

【0036】次に、搬送アーム4が作動して水平回転
し、かつローダ24方向に伸びて先端の保持腕4aを突
き上げ棒の下側に位置させ、そして、突き上げ棒が下降
し、保持腕4a上にウエハが載置位置決めされる。
Next, the transfer arm 4 is actuated to rotate horizontally, and extends in the direction of the loader 24 to position the holding arm 4a at the front end under the push-up rod, and the push-up rod descends to hold the holding arm 4a. The wafer is placed and positioned on top.

【0037】次いで、保持腕4a上にウエハが載置され
た状態で、搬送アーム4が水平回転し、かつ伸縮してア
ンモニア処理室27の開口部3bからウエハをアンモニ
ア処理室27の処理槽27aの専用ボート27b上に挿
入位置させる。そして、この状態でアンモニア処理室2
7内のウエハは洗浄処理される。
Next, with the wafer placed on the holding arm 4a, the transfer arm 4 horizontally rotates and expands / contracts so that the wafer is transferred from the opening 3b of the ammonia processing chamber 27 to the processing tank 27a of the ammonia processing chamber 27. The insertion position is set on the exclusive boat 27b. Then, in this state, the ammonia processing chamber 2
The wafer in 7 is cleaned.

【0038】アンモニア処理室27内での洗浄が終了し
た後、上述の動作と逆の動作でボート27b上のウエハ
を搬送アーム4の保持腕4a上に載置位置決めして、ウ
エハをアンモニア処理室27外に取り出し、次の水洗処
理室28内へウエハを搬入する。そして、水洗処理室2
8において、ウエハ確認検出装置(図示せず)によって
ウエハの整列状態が確認されて、搬送アーム4からウエ
ハ保持アーム3に受け渡された後、上述したように、こ
の発明の洗浄処理装置により処理槽1内に整流化されて
供給される洗浄処理液によってウエハの表面が洗浄処理
される。
After the cleaning in the ammonia processing chamber 27 is completed, the wafer on the boat 27b is placed and positioned on the holding arm 4a of the transfer arm 4 by the operation reverse to the above operation, and the wafer is placed in the ammonia processing chamber. The wafer is taken out of the outside 27 and carried into the next water washing processing chamber 28. And the water treatment room 2
At 8, the wafer alignment detection device (not shown) confirms the wafer alignment state, the wafer is transferred from the transfer arm 4 to the wafer holding arm 3, and then processed by the cleaning processing device of the present invention as described above. The surface of the wafer is cleaned by the cleaning processing liquid that is rectified and supplied into the bath 1.

【0039】搬入側の洗浄処理ユニット21による洗浄
が終了したウエハは、搬入側の洗浄処理ユニット21と
中央の洗浄処理ユニット22との間の水中ローダ26に
よって中央の洗浄処理ユニット22に搬送され、中央の
洗浄処理ユニット22の容器40内に配設された搬送ア
ーム4によって上述と同様に搬送される。そして、ウエ
ハは、順次フッ酸処理室29内での洗浄処理、オーバー
フロー処理室30内での水洗オーバーフロー処理が行わ
れる。
The wafer that has been cleaned by the carry-in side cleaning processing unit 21 is transferred to the central cleaning processing unit 22 by an underwater loader 26 between the carrying-in side cleaning processing unit 21 and the central cleaning processing unit 22. It is transported in the same manner as described above by the transport arm 4 arranged in the container 40 of the central cleaning processing unit 22. Then, the wafer is sequentially subjected to cleaning treatment in the hydrofluoric acid treatment chamber 29 and water washing overflow treatment in the overflow treatment chamber 30.

【0040】また、中央の洗浄処理ユニット22での洗
浄処理が行われたウエハは、中央の洗浄処理ユニット2
2と搬出側の洗浄処理ユニット23との間の水中ローダ
26にて搬出側の洗浄処理ユニット23に搬送される。
そして、搬出側の洗浄処理ユニット23の搬送アーム4
によって上述と同様に搬送されて、ファイナルリンスが
行われた後、乾燥処理が行われる。
The wafer that has been subjected to the cleaning processing in the central cleaning processing unit 22 is processed in the central cleaning processing unit 2
2 and the cleaning processing unit 23 on the unloading side are transported to the cleaning processing unit 23 on the unloading side by an underwater loader 26.
Then, the transfer arm 4 of the cleaning processing unit 23 on the unloading side
After being transported in the same manner as described above, a final rinse is performed, and then a drying process is performed.

【0041】搬出側の洗浄処理ユニット23にて洗浄処
理されたウエハはアンローダ25に搬送され、このアン
ローダ25にてウエハの25枚ずつの分割、オリフラ合
せが行われ、そして、2つのキャリアに載置されて搬出
される。
The wafer cleaned by the cleaning processing unit 23 on the unloading side is transferred to the unloader 25, and the unloader 25 divides the wafer into 25 wafers and aligns the orientation flats, and mounts the wafers on the two carriers. It is placed and carried out.

【0042】なお、上記実施例ではこの発明の洗浄処理
装置がウエハの洗浄装置に組込まれる場合について説明
したが、必ずしもウエハの洗浄装置に限定するものでは
なく、その他の例えばLCDガラス基板等の洗浄装置や
エッチング装置等にも適用できることは勿論である。
In the above embodiment, the case where the cleaning processing apparatus of the present invention is incorporated into the wafer cleaning apparatus has been described, but the invention is not necessarily limited to the wafer cleaning apparatus, and other cleaning such as LCD glass substrate is possible. Of course, it can be applied to an apparatus, an etching apparatus, and the like.

【0043】[0043]

【発明の効果】以上に説明したように、この発明の洗浄
処理装置によれば、上記のように構成されているので、
以下のような効果が得られる。
As described above, according to the cleaning processing apparatus of the present invention, since it is configured as described above,
The following effects can be obtained.

【0044】1)請求項1記載の洗浄処理装置によれ
ば、処理槽の下方部に設けられた洗浄処理液の供給口と
被処理体との間に、洗浄処理液の誘導流路と気泡抜き流
路を有する整流手段を形成してなるので、洗浄処理液を
整流化させて被処理体に供給することができると共に、
被処理体への気泡の付着を防止することができ、被処理
体の洗浄処理の向上を図ることができる。
1) According to the cleaning processing apparatus of the first aspect, an induction flow path of the cleaning processing liquid and bubbles are provided between the cleaning processing liquid supply port provided in the lower portion of the processing tank and the object to be processed. Since the rectifying means having the discharge channel is formed, the cleaning treatment liquid can be rectified and supplied to the object to be treated,
It is possible to prevent bubbles from adhering to the object to be processed and improve the cleaning process of the object to be processed.

【0045】2)請求項2記載の洗浄処理装置によれ
ば、整流手段を、洗浄処理液供給口の上方に位置する中
央整流板と、この中央整流板の両側辺上方に洗浄処理液
誘導流路を介して側方に延在して処理槽との間に気泡抜
き流路を形成する上反角を有する側部整流板とで構成し
てなるので、整流板に多数の小孔等を穿設する必要がな
く、整流手段の加工工数が低減でき、装置の組立の簡略
化を図ることができる。
2) According to the cleaning processing apparatus of the second aspect, the rectifying means is provided with the central rectifying plate located above the cleaning processing liquid supply port, and the cleaning processing liquid guiding flow above both sides of the central rectifying plate. Since it is composed of a side straightening vane that has a dihedral angle that extends laterally through the passage to form a bubble removal flow path between the treatment bath and the processing tank, a large number of small holes, etc. are formed in the straightening vane. Since it is not necessary to pierce, the number of processing steps of the rectifying means can be reduced, and the assembly of the device can be simplified.

【0046】3)請求項3の洗浄処理装置によれば、側
部整流板を、互いに洗浄処理液誘導流路を介して段状に
配列される複数の整流板にて形成するので、更に均一に
整流化された洗浄処理液を被処理体に供給することがで
きる。
3) According to the cleaning processing apparatus of the third aspect, since the side straightening vanes are formed by a plurality of straightening vanes arranged in a stepwise manner with respect to each other through the washing treatment liquid guiding flow paths, a more uniform distribution is achieved. It is possible to supply the cleaning treatment liquid rectified to the object to be treated.

【0047】4)請求項4記載の洗浄処理装置によれ
ば、側部整流板の中央側辺部に、洗浄処理液案内用円弧
部を形成するので、洗浄処理液の流れをより一層整流化
させることができる。
4) According to the cleaning treatment apparatus of the fourth aspect, since the circular arc portion for guiding the cleaning treatment liquid is formed on the central side portion of the side straightening vane, the flow of the cleaning treatment liquid is further rectified. Can be made

【図面の簡単な説明】[Brief description of drawings]

【図1】この発明の洗浄処理装置の第一実施例を示す概
略断面図である。
FIG. 1 is a schematic sectional view showing a first embodiment of a cleaning processing apparatus of the present invention.

【図2】第一実施例の洗浄処理装置の要部を示す斜視図
である。
FIG. 2 is a perspective view showing a main part of the cleaning processing apparatus of the first embodiment.

【図3】この発明の洗浄処理装置の第二実施例の要部を
示す断面図である。
FIG. 3 is a sectional view showing an essential part of a second embodiment of the cleaning processing apparatus of the present invention.

【図4】この発明の洗浄処理装置の第三実施例を示す概
略断面図である。
FIG. 4 is a schematic sectional view showing a third embodiment of the cleaning processing apparatus of the present invention.

【図5】この発明の洗浄処理装置を有する洗浄装置の全
体を示す概略平面図である。
FIG. 5 is a schematic plan view showing an entire cleaning device having the cleaning processing device of the present invention.

【符号の説明】[Explanation of symbols]

1 処理槽 2 洗浄処理液供給口 5 整流手段 5a 中央整流板 5b 側部整流板 5c 第1の側部整流板 5d 第2の側部整流板 12 洗浄処理液誘導流路 13 気泡抜き流路 17 洗浄処理液案内用円弧部 A 半導体ウエハ(被処理体) C 洗浄処理液 1 Processing Tank 2 Cleaning Treatment Liquid Supply Port 5 Rectifying Means 5a Central Rectifying Plate 5b Side Rectifying Plate 5c First Side Rectifying Plate 5d Second Side Rectifying Plate 12 Cleaning Treatment Liquid Inducing Flow Path 13 Bubble Exhausting Flow Path 17 Circular part for guiding cleaning solution A Semiconductor wafer (object to be processed) C Cleaning solution

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 処理槽内に収容される洗浄処理液中に被
処理体を浸漬させて被処理体の表面を洗浄する洗浄処理
装置において、 上記処理槽の下方部に洗浄処理液の供給口を設け、 上記供給口と被処理体との間に、洗浄処理液の誘導流路
と気泡抜き流路を有する整流手段を形成してなることを
特徴とする洗浄処理装置。
1. A cleaning processing apparatus for cleaning a surface of an object to be processed by immersing the object to be processed in a cleaning processing solution contained in a processing tank, wherein a cleaning processing solution supply port is provided at a lower portion of the processing tank. The cleaning processing apparatus is characterized in that a rectifying means having an induction flow path for the cleaning processing liquid and a bubble removal flow path is formed between the supply port and the object to be processed.
【請求項2】 整流手段を、洗浄処理液供給口の上方に
位置する中央整流板と、この中央整流板の両側辺上方に
洗浄処理液誘導流路を介して側方に延在すると共に、処
理槽との間に気泡抜き流路を形成する上反角を有する側
部整流板とで構成してなることを特徴とする請求項1記
載の洗浄処理装置。
2. A rectifying means, a central rectifying plate located above the cleaning treatment liquid supply port, and laterally extending above both sides of the central rectifying plate through a cleaning treatment liquid guide passage, The cleaning processing apparatus according to claim 1, wherein the cleaning processing apparatus is configured by a side straightening plate having a dihedral angle that forms a bubble removal flow path between the processing tank and the processing tank.
【請求項3】 側部整流板を、互いに洗浄処理液誘導流
路を介して段状に配列される複数の整流板にて形成して
なることを特徴とする請求項2記載の洗浄処理装置。
3. The cleaning processing apparatus according to claim 2, wherein the side straightening vanes are formed by a plurality of straightening vanes arranged in a stepwise manner with respect to each other through the washing processing liquid guiding passages. ..
【請求項4】 側部整流板の中央側辺部に、洗浄処理液
案内用円弧部を形成してなることを特徴とする請求項2
又は3記載の洗浄処理装置。
4. The cleaning treatment liquid guiding arc portion is formed on the central side portion of the side straightening vane.
Alternatively, the cleaning apparatus according to the above item 3.
JP4083215A 1992-03-05 1992-03-05 Cleaning equipment Expired - Fee Related JP3008001B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP4083215A JP3008001B2 (en) 1992-03-05 1992-03-05 Cleaning equipment
US08/026,016 US5327921A (en) 1992-03-05 1993-03-04 Processing vessel for a wafer washing system
KR1019930003225A KR0163362B1 (en) 1992-03-05 1993-03-04 Treatment bath for cleaning apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4083215A JP3008001B2 (en) 1992-03-05 1992-03-05 Cleaning equipment

Publications (2)

Publication Number Publication Date
JPH05251420A true JPH05251420A (en) 1993-09-28
JP3008001B2 JP3008001B2 (en) 2000-02-14

Family

ID=13796099

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4083215A Expired - Fee Related JP3008001B2 (en) 1992-03-05 1992-03-05 Cleaning equipment

Country Status (1)

Country Link
JP (1) JP3008001B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0975015A1 (en) * 1997-12-26 2000-01-26 SPC Electronics Corporation Wafer cleaning equipment and tray for use in wafer cleaning equipment
KR100673391B1 (en) * 2004-12-01 2007-01-24 세메스 주식회사 Apparatus for cleaning substrates
US11610789B2 (en) 2020-03-05 2023-03-21 Kioxia Corporation Semiconductor manufacturing apparatus and method of manufacturing semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0975015A1 (en) * 1997-12-26 2000-01-26 SPC Electronics Corporation Wafer cleaning equipment and tray for use in wafer cleaning equipment
EP0975015A4 (en) * 1997-12-26 2000-10-11 Shimada Rika Kogyo Kk Wafer cleaning equipment and tray for use in wafer cleaning equipment
KR100673391B1 (en) * 2004-12-01 2007-01-24 세메스 주식회사 Apparatus for cleaning substrates
US11610789B2 (en) 2020-03-05 2023-03-21 Kioxia Corporation Semiconductor manufacturing apparatus and method of manufacturing semiconductor device

Also Published As

Publication number Publication date
JP3008001B2 (en) 2000-02-14

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