JPH0524993A - Production of potassium salt single crystal - Google Patents
Production of potassium salt single crystalInfo
- Publication number
- JPH0524993A JPH0524993A JP20748391A JP20748391A JPH0524993A JP H0524993 A JPH0524993 A JP H0524993A JP 20748391 A JP20748391 A JP 20748391A JP 20748391 A JP20748391 A JP 20748391A JP H0524993 A JPH0524993 A JP H0524993A
- Authority
- JP
- Japan
- Prior art keywords
- raw material
- crystal
- temperature
- single crystal
- temp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、一般式KTaX Nb
1-X O3 (0≦x≦1)で表わされるカリウム塩単結晶
の製造方法に関するものである。FIELD OF THE INVENTION The present invention is of the general formula KTa X Nb.
The present invention relates to a method for producing a potassium salt single crystal represented by 1-X O 3 (0 ≦ x ≦ 1).
【0002】[0002]
【従来の技術】KTaX Nb1-X O3 (0≦x≦1、以
下KTNと略す)単結晶は、化学量論組成、すなわちK
2 O:(Nb2 O5 +Ta2 O5 )=50:50(モル
比)の融液では調和溶融(コングルエント溶融)しない
ために、単結晶の製造においては過剰のK2 Oを含む高
温の融液に種子結晶をつけ、結晶の析出により種子結晶
が成長する。KTa X Nb 1-X O 3 (0 ≦ x ≦ 1, hereinafter abbreviated as KTN) single crystal has a stoichiometric composition, that is, K
2 O: (Nb 2 O 5 + Ta 2 O 5 ) = 50: 50 (molar ratio) does not cause congruent melting (congruent melting) in the melt, so that in the production of a single crystal, a high temperature containing excess K 2 O is used. A seed crystal is attached to the melt, and the seed crystal grows by the precipitation of the crystal.
【0003】このようにして製造されたKTN単結晶
は、しばしば青色に着色する。光学用途に使用するKT
N単結晶には、光吸収や電気抵抗の低下するこのような
着色欠陥が発生すると致命的となる。The KTN single crystal produced in this way is often colored blue. KT used for optical applications
It is fatal for the N single crystal to have such a coloring defect that reduces light absorption and electric resistance.
【0004】従来、この問題を解決するために、KNb
O3 単結晶(KTN単結晶においてx=0の場合)結晶
製造工程において、原料を1150℃以上1300℃程
度までの高温でソーキングすることによって着色をなく
すことが、 Japan. J. Appl.Phys.11 (1972) 163頁等に
より提案されている。この方法による実験では、125
0℃、100時間以上の加熱処理(ソーキング)を行う
ことによって、青色着色の発生を再現性良く防止でき
た。しかし、結晶成長の前の工程に時間がかかりすぎる
ことや、結晶製造用電気炉の最高使用温度を融点(10
50℃)より200℃以上にする必要があり、そのため
電気炉の価格が高くなること、ヒーター線の寿命が短く
なる等の欠点がある。Conventionally, in order to solve this problem, KNb
In the crystal manufacturing process of O 3 single crystal (when x = 0 in KTN single crystal), it is possible to eliminate coloring by soaking the raw material at a high temperature of 1150 ° C. to 1300 ° C. in Japan. J. Appl. Phys. 11 (1972) page 163. In the experiment by this method, 125
By performing the heat treatment (soaking) at 0 ° C. for 100 hours or more, the occurrence of blue coloring could be prevented with good reproducibility. However, the process before the crystal growth takes too much time, and the maximum operating temperature of the electric furnace for crystal production is set to the melting point (10
50 ° C.) to 200 ° C. or higher, which has drawbacks such as an increase in the price of the electric furnace and a shortened life of the heater wire.
【0005】また、この方法では、原料組成がK2 O:
(Nb2 O5 +Ta2 O5 )=52.5:47.5(モ
ル比)程度の比較的低いフラックス濃度では有効である
が、K2 O:(Nb2 O5 +Ta2 O5 )=54:46
(モル比)以上の比較的高いフラックス濃度では着色欠
陥をなくす効果が得られなかった。In this method, the raw material composition is K 2 O:
(Nb 2 O 5 + Ta 2 O 5 ) = 52.5: 47.5 (molar ratio) is effective at a relatively low flux concentration, but K 2 O: (Nb 2 O 5 + Ta 2 O 5 ) = 54:46
At a relatively high flux concentration above the (molar ratio), the effect of eliminating coloring defects could not be obtained.
【0006】また、その他の方法として、SnO2 や、
ZrO2 などをドーピングし着色をなくすことが、J. C
rystal Growth 99 (1990) 634 頁等により提案されてい
る。この方法では、再現性が乏しいうえに、ドーピング
剤が結晶中で不均質に分布しやすく、結晶の屈折率分布
など光学的性質に悪影響を与える問題点があった。As another method, SnO 2 or
Doping with ZrO 2 etc. to eliminate coloring is described in J. C.
rystal Growth 99 (1990) 634, p. This method has a problem that the reproducibility is poor and the doping agent is likely to be nonuniformly distributed in the crystal, which adversely affects the optical properties such as the refractive index distribution of the crystal.
【0007】[0007]
【発明が解決しようとする課題】本発明の目的は、従来
技術が有するこのような結晶工程中に結晶に生ずる青色
着色の欠点を解消するものである。SUMMARY OF THE INVENTION An object of the present invention is to eliminate the drawback of blue coloring that occurs in the crystal during the crystallization process, which the prior art has.
【0008】[0008]
【課題を解決するための手段】本発明は、前述の問題点
を解決すべくなされたもので、一般式KTaX Nb1- X
O3 (0≦x≦1)で表わされるカリウム塩単結晶を、
原料融液から種子結晶を用いて結晶成長させて製造する
方法において、原料融液温度が平衡温度より低い過冷却
状態にあり、かつその過冷却温度、すなわち平衡温度−
原料融液温度が1.5℃以上の融液温度で徐々に結晶成
長することを特徴とするカリウム塩単結晶の製造方法を
提供するものである。The present invention has been made to solve the above-mentioned problems, and has the general formula KTa X Nb 1- X.
A potassium salt single crystal represented by O 3 (0 ≦ x ≦ 1) is
In the method for producing a crystal by growing a seed crystal from a raw material melt, the raw material melt temperature is in a supercooled state lower than the equilibrium temperature, and its supercooling temperature, that is, the equilibrium temperature-
Provided is a method for producing a potassium salt single crystal, which is characterized by gradually growing crystals at a melt temperature of a raw material melt temperature of 1.5 ° C. or higher.
【0009】本発明においては、選択された原料を完全
に溶融後、平衡温度と予想される適当な温度にこの融液
の温度を設定して種子結晶をこの融液につけ、30時間
以上保持しても種子結晶が成長しない最低温度をさがす
ことにより平衡温度を決めることができる。1度この温
度が判れば、2度目からはこの温度を基準に平衡温度を
測定することができるので、平衡温度測定の時間は大き
く短縮できる。In the present invention, after the selected raw material is completely melted, the temperature of the melt is set to an appropriate temperature expected to be the equilibrium temperature and the seed crystals are immersed in the melt and kept for 30 hours or more. However, the equilibrium temperature can be determined by searching for the lowest temperature at which seed crystals do not grow. If this temperature is known once, the equilibrium temperature can be measured from the second time on the basis of this temperature, and therefore the equilibrium temperature measurement time can be greatly shortened.
【0010】また、別の方法として、種子結晶をつける
前の融液の準備、合成工程において、原料の完全溶融状
態から融液温度を下げて自然核発生により結晶を析出さ
せ、更に融液温度を上昇させてこの析出結晶が溶ける温
度を測定し、その温度を平衡温度とすることができる。As another method, in the step of preparing and synthesizing a melt before seed crystals are attached, the melt temperature is lowered from the completely molten state of the raw materials to precipitate crystals by spontaneous nucleation, and the melt temperature is further increased. Is raised to measure the temperature at which the precipitated crystals melt, and the temperature can be taken as the equilibrium temperature.
【0011】本発明は、結晶成長のために種子結晶を融
液につけた後は、過冷却温度が1.5℃以内の範囲に
1.5時間以上保持しないこと、あるいは過冷却温度が
1.5℃以上の融液に種子結晶をつけ、種子結晶を徐々
に成長させることにより着色欠陥の無い結晶を安定に製
造できる。According to the present invention, after the seed crystal is immersed in the melt for crystal growth, the supercooling temperature is not kept within the range of 1.5 ° C. for 1.5 hours or more, or the supercooling temperature is 1. By adding seed crystals to a melt at 5 ° C. or higher and gradually growing the seed crystals, it is possible to stably produce crystals without coloring defects.
【0012】本発明の着色欠陥をなくす方法の原理につ
いては必ずしも明確ではないが、発明者らの実験によ
り、KTN単結晶の青色着色は特に種子結晶の付近、す
なわち最初に析出成長する部分に多く発生することがわ
かった。更に、種子結晶を用いずに原料融液をルツボ内
で徐冷、固化させる場合でも最初に析出する部分に青色
着色が多くみられること、原料融液のK2 O:(Nb2
O5 +Ta2 O5 )の組成を変えても、KTN相として
最初に析出する部分に青色着色が多く発生することがわ
かった。種子結晶付近に青色着色が発生した結晶をとり
だした後、徐冷凝固させたルツボ残留物は青色着色しな
いこともわかった。Although the principle of the method of eliminating the coloring defect of the present invention is not always clear, the experiments by the inventors revealed that the blue coloring of the KTN single crystal was particularly large in the vicinity of the seed crystal, that is, in the portion where the first precipitation growth occurred. It turned out to occur. Furthermore, even when the raw material melt is gradually cooled and solidified in the crucible without using seed crystals, blue coloring is often observed in the first deposited portion, and K 2 O: (Nb 2
It was found that even if the composition of O 5 + Ta 2 O 5 ) was changed, a large amount of blue coloration occurred in the portion that was initially precipitated as the KTN phase. It was also found that the crucible residue that was slowly cooled and solidified after taking out the crystals in which blue coloring was generated in the vicinity of the seed crystals was not blue colored.
【0013】また、原料組成がK2 O:(Nb2 O5 +
Ta2 O5 )=52.5:47.5(モル比)の場合、
種子結晶を融液につけ、結晶を成長させる温度を平衡温
度より0.5℃から4℃の範囲で変えて育成実験を行っ
た結果、結晶の着色量は図1のようになった。図1から
明らかのように、着色欠陥は過冷却温度が実質的に1.
5℃以下の範囲で発生しており、平衡温度から徐々に温
度を下げ結晶成長を行うと、平衡温度以下1.5℃以内
の結晶成長開始初期に着色欠陥が発生すると理解され
る。The raw material composition is K 2 O: (Nb 2 O 5 +
In the case of Ta 2 O 5 ) = 52.5: 47.5 (molar ratio),
As a result of conducting a growing experiment in which the seed crystal was immersed in the melt and the temperature for growing the crystal was changed in the range of 0.5 ° C. to 4 ° C. from the equilibrium temperature, the coloring amount of the crystal was as shown in FIG. As is apparent from FIG. 1, the coloring defect has a supercooling temperature of substantially 1.
It occurs in the range of 5 ° C. or less, and it is understood that when the temperature is gradually lowered from the equilibrium temperature and crystal growth is performed, a coloring defect occurs at the initial stage of crystal growth within 1.5 ° C. below the equilibrium temperature.
【0014】これらのことから、この平衡温度以下1.
5℃以内の温度域をできるだけ速く通過するか、あるい
は平衡温度より1.5℃以上低い温度すなわち過冷却温
度が1.5℃以上の温度から結晶育成を行うことが、着
色欠陥をなくす効果を生ずるものと考えられ、本発明は
これら事実に基くものである。従って、1.5℃以内を
通過する時間はできるだけ短い方が望ましく、この時間
が1.5時間以内であれば着色は生じないが、これ以上
になると着色量は急激に増す。From these facts, the equilibrium temperature of 1.
The effect of eliminating coloring defects is to pass the temperature range within 5 ° C as fast as possible, or to grow the crystal from a temperature lower than the equilibrium temperature by 1.5 ° C or more, that is, a supercooling temperature of 1.5 ° C or more. It is believed that this occurs and the present invention is based on these facts. Therefore, it is desirable that the time for passing within 1.5 ° C. is as short as possible. If this time is within 1.5 hours, coloring does not occur, but if it exceeds this time, the amount of coloring sharply increases.
【0015】[0015]
(実施例1)KTN単結晶において、x=0であるKN
bO3 単結晶のTSSG法(Top Seeded Solution Grow
th法)による例を示す。図2に使用した製造装置を示
す。K2 O:Nb2 O5 =52.5:47.5(モル
比)の組成の原料を、白金ルツボ1に投入した。このル
ツボは、アルミナセラミックス台2上に置かれ、その外
側にアルミナ保護管3、抵抗加熱ヒーター4の付属する
縦型管状炉5を配置して前記抵抗加熱ヒーター4によ
り、原料融液の温度を制御した。(Example 1) KTN in which x = 0 in a KTN single crystal
TSO method of bO 3 single crystal (Top Seeded Solution Grow
th method). The manufacturing apparatus used is shown in FIG. A raw material having a composition of K 2 O: Nb 2 O 5 = 52.5: 47.5 (molar ratio) was put into the platinum crucible 1. This crucible is placed on an alumina ceramics table 2, and an alumina protective tube 3 and a vertical tubular furnace 5 to which a resistance heater 4 is attached are arranged outside the crucible and the temperature of the raw material melt is controlled by the resistance heater 4. Controlled.
【0016】シードホルダー6の先端に取り付けられた
種子結晶7を融液8につけた後、種子結晶を回転させな
がら温度を下げて行くことにより、種子結晶の先端に結
晶を析出させ成長させた。After the seed crystal 7 attached to the tip of the seed holder 6 was immersed in the melt 8, the temperature was lowered while rotating the seed crystal to deposit and grow the crystal at the tip of the seed crystal.
【0017】そのときの温度制御状況を次に示す。原料
が完全に溶融する1080℃まで昇温して2時間保持
後、融液温度を予想される平衡温度付近まで下げ、種子
結晶を融液に接触させて種子結晶が成長もせず、融けも
しない融液温度に調整し、その温度を平衡温度とした。
その後、一旦この種子結晶を融液から離し、種子結晶が
全く成長していないことを確認した。次いで、融液温度
を平衡温度から2.5℃下げ、再び種子結晶を融液に接
触させて結晶の成長を行った。その結果、50mm角の
無色透明な単結晶を得ることができた。The temperature control situation at that time is shown below. After the raw material is completely melted and heated to 1080 ° C and held for 2 hours, the melt temperature is lowered to near the expected equilibrium temperature and the seed crystal is brought into contact with the melt so that the seed crystal does not grow nor melt. The temperature of the melt was adjusted and the temperature was set as the equilibrium temperature.
Then, this seed crystal was once separated from the melt, and it was confirmed that the seed crystal did not grow at all. Then, the melt temperature was lowered from the equilibrium temperature by 2.5 ° C., and the seed crystal was brought into contact with the melt again to grow the crystal. As a result, a colorless and transparent single crystal of 50 mm square could be obtained.
【0018】(実施例2)実施例1と同様にして平衡温
度を決めた後に、種子結晶を融液から切りはなさず、そ
のまま2℃/hで2.5℃融液温度を下げて、結晶育成
を行った。その結果、50mm角の無色透明な単結晶を
得ることができた。(Example 2) After determining the equilibrium temperature in the same manner as in Example 1, the seed crystal was not cut from the melt, and the melt temperature was lowered at 2.5 ° C at 2 ° C / h as it was, to give the crystal. Raised. As a result, a colorless and transparent single crystal of 50 mm square could be obtained.
【0019】(実施例3)x=0の場合であって、原料
組成がK2 O:Nb2 O5 =56:44(モル比)の原
料を使用した場合も、実施例1と同様の手法で50mm
角の無色透明な単結晶を得ることができた。(Example 3) The same as Example 1 when x = 0 and a raw material composition of K 2 O: Nb 2 O 5 = 56: 44 (molar ratio) was used. 50mm by method
A colorless and transparent single crystal with horns could be obtained.
【0020】[0020]
【発明の効果】本発明は、KTN結晶育成に際し、青色
着色欠陥の発生を再現性良く防ぐ効果があり、結晶の歩
留を向上させることができる。また、従来のように高温
での加熱処理(ソーキング)をしなくて青色着色の発生
を再現性良く防止できるために、電気炉の最高使用温度
を低くでき、これにより電気炉そのものの価格を安くで
きるばかりでなく、ヒーター線の寿命を長くすることが
でき、しかも結晶工程全体の時間をも短くできる。INDUSTRIAL APPLICABILITY The present invention has the effect of reproducibly preventing the occurrence of blue coloring defects during the growth of KTN crystals, and can improve the crystal yield. In addition, since it is possible to prevent the occurrence of blue coloring with good reproducibility without the need for heat treatment (soaking) at high temperatures as in the past, it is possible to lower the maximum operating temperature of the electric furnace, which reduces the price of the electric furnace itself. Not only can this be done, but the life of the heater wire can be extended and the time for the entire crystallization process can be shortened.
【0021】また、従来の方法では、原料組成がK2
O:(Nb2 O5 +Ta2 O3 )=52.5:47.5
(モル比)程度の比較的低いフラックス濃度では有効で
あるが、K2 O:(Nb2 O5 +Ta2 O3 )=54:
46(モル比)以上の比較的高いフラックス濃度では効
果がなかったのに対し、本発明は状態図の液相線の傾き
の大きい高フラックス濃度からの育成も可能になり、育
成時の温度安定性の許容巾も大きくなり、結晶品質の向
上とともに育成の歩留も向上する。さらにまた、ドーピ
ング剤の結晶中で不均質な分布による結晶の屈折率分布
など光学的性質に悪影響を与えることもないなどの効果
が認められる。In the conventional method, the raw material composition is K 2
O: (Nb 2 O 5 + Ta 2 O 3 ) = 52.5: 47.5
It is effective at a relatively low flux concentration of about (molar ratio), but K 2 O: (Nb 2 O 5 + Ta 2 O 3 ) = 54:
While there was no effect at a relatively high flux concentration of 46 (molar ratio) or more, the present invention also enables growth from a high flux concentration with a large slope of the liquidus line in the phase diagram, which results in stable temperature during growth. The allowable range of properties is increased, and the crystal yield is improved along with the improvement of crystal quality. Furthermore, the effect that the optical properties such as the refractive index distribution of the crystal due to the inhomogeneous distribution in the crystal of the doping agent are not adversely affected is recognized.
【図1】過冷却温度と着色量との関係を示すグラフFIG. 1 is a graph showing the relationship between supercooling temperature and coloring amount.
【図2】代表的な結晶育成装置を説明する断面図FIG. 2 is a cross-sectional view illustrating a typical crystal growing device.
1 白金ルツボ 2 アルミナセラミックス台 3 アルミナ保護管 4 抵抗加熱ヒーター 5 縦型管状炉 6 シードホルダー 7 種子結晶 8 原料融液 1 platinum crucible 2 Alumina ceramics stand 3 Alumina protection tube 4 resistance heater 5 Vertical tubular furnace 6 seed holder 7 seed crystals 8 Raw material melt
Claims (7)
1)で表わされるカリウム塩単結晶を、原料融液から種
子結晶を用いて結晶成長させて製造する方法において、
原料融液温度が平衡温度より低い過冷却状態にあり、か
つその過冷却温度、すなわち平衡温度−原料融液温度が
1.5℃以上の融液温度から徐々に結晶を成長させるこ
とを特徴とするカリウム塩単結晶の製造方法。1. A general formula KTa X Nb 1-X O 3 (0 ≦ x ≦
In the method for producing a potassium salt single crystal represented by 1) by growing a crystal from a raw material melt using a seed crystal,
The raw material melt temperature is lower than the equilibrium temperature in a supercooled state, and the crystal is gradually grown from the supercooled temperature, that is, the equilibrium temperature-the raw material melt temperature is 1.5 ° C. or higher. Method for producing potassium salt single crystal.
け、以後種子結晶を原料融液から離すことなく結晶成長
させる方法であって、過冷却温度が0℃以上1.5℃未
満の範囲の融液に種子結晶をつけている時間を1.5時
間以内とする請求項1のカリウム塩単結晶の製造方法。2. A method for growing a seed crystal in a raw material melt having an equilibrium temperature or higher and growing the seed crystal without separating from the raw material melt, wherein the supercooling temperature is 0 ° C. or higher and lower than 1.5 ° C. The method for producing a potassium salt single crystal according to claim 1, wherein the time for which the seed crystal is attached to the melt in the range is 1.5 hours or less.
け、以後種子結晶を原料融液から一旦離し、過冷却温度
が1.5℃以上となった原料融液に再び種子結晶をつ
け、この種子結晶のまわりに徐々に結晶成長させる請求
項1のカリウム塩単結晶の製造方法。3. A seed crystal is attached to a raw material melt having an equilibrium temperature or higher, and thereafter the seed crystal is once separated from the raw material melt, and then the seed crystal is reapplied to the raw material melt having a supercooling temperature of 1.5 ° C. or higher. The method for producing a potassium salt single crystal according to claim 1, wherein the crystal is gradually grown around the seed crystal.
けて30時間以上そのまま保持しても種子結晶が成長し
ない温度のうち最低温度である請求項1のカリウム塩単
結晶の製造方法。4. The method for producing a potassium salt single crystal according to claim 1, wherein the equilibrium temperature is the lowest temperature at which the seed crystal does not grow even if the seed crystal is added to the raw material melt and kept as it is for 30 hours or more. .
原料を完全溶融状態から温度を下げて結晶を析出させ、
再び温度を上昇させて析出結晶が溶ける温度である請求
項1のカリウム塩単結晶の製造方法。5. The equilibrium temperature is such that the temperature of the raw material is lowered from a completely molten state before seed crystals are attached to precipitate crystals.
The method for producing a potassium salt single crystal according to claim 1, wherein the temperature is raised again to dissolve the precipitated crystal.
ないことを特徴とする請求項1のカリウム塩単結晶の製
造方法。6. The method for producing a potassium salt single crystal according to claim 1, wherein the raw material is not heated to a high temperature of 200 ° C. or higher of the melting point.
上、Nb2 O5 +Ta2 O5 が46モル%以下である請
求項1のカリウム塩単結晶の製造方法。7. The method for producing a potassium salt single crystal according to claim 1, wherein the composition ratio of the raw materials is such that K 2 O is 54 mol% or more and Nb 2 O 5 + Ta 2 O 5 is 46 mol% or less.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20748391A JPH0524993A (en) | 1991-07-24 | 1991-07-24 | Production of potassium salt single crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20748391A JPH0524993A (en) | 1991-07-24 | 1991-07-24 | Production of potassium salt single crystal |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0524993A true JPH0524993A (en) | 1993-02-02 |
Family
ID=16540494
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20748391A Withdrawn JPH0524993A (en) | 1991-07-24 | 1991-07-24 | Production of potassium salt single crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0524993A (en) |
-
1991
- 1991-07-24 JP JP20748391A patent/JPH0524993A/en not_active Withdrawn
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5084206A (en) | Doped crystalline compositions and a method for preparation thereof | |
JPH0524993A (en) | Production of potassium salt single crystal | |
Changkang et al. | The flux growth of scandium oxide crystals | |
EP0187843B1 (en) | Growth of single crystal cadmium-indium-telluride | |
EP0642603B1 (en) | Single cesium titanyl arsenate-type crystals and their preparation | |
JP4682350B2 (en) | Crystal growth method and apparatus | |
JP2825060B2 (en) | Beta-barium borate single crystal processing surface modification method | |
JP3021935B2 (en) | Method for producing cadmium manganese tellurium single crystal | |
JP2881737B2 (en) | Manufacturing method of optical single crystal | |
JP4228127B2 (en) | Method for producing calcium fluoride crystals | |
JPH08295507A (en) | Optical crystal and its production | |
JP2959097B2 (en) | Single crystal growth method | |
JPH0411513B2 (en) | ||
Isaacs et al. | Crystal growth of Tl3VS4 | |
JPH03279298A (en) | Growth of beta-bab2o4 single crystal using nacl as flux | |
JPH06199600A (en) | Method for growing beta-barium borate single crystal | |
JPH0465399A (en) | Production of lithium niobate single crystal | |
JPH06345580A (en) | Production of single crystal | |
JPH04325496A (en) | Manufacture of magnesium added lithium niobade single crystal | |
JPH06263581A (en) | Production of single crystal | |
JPH06234597A (en) | Lithium tantalate single crystal and its production | |
JPH02279583A (en) | Method for growing single crystal | |
JP2005187230A (en) | Method and apparatus for producing oxide single crystal | |
JPH05279164A (en) | Production of iii-v group compound semiconductor single crystal and apparatus therefor | |
JPH05246797A (en) | Production of lithium tetraborate single crystal |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 19981008 |