JPH05249916A - Low electric power driving circuit - Google Patents
Low electric power driving circuitInfo
- Publication number
- JPH05249916A JPH05249916A JP4051168A JP5116892A JPH05249916A JP H05249916 A JPH05249916 A JP H05249916A JP 4051168 A JP4051168 A JP 4051168A JP 5116892 A JP5116892 A JP 5116892A JP H05249916 A JPH05249916 A JP H05249916A
- Authority
- JP
- Japan
- Prior art keywords
- electric power
- circuit
- electrode
- mos transistor
- reactive power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、容量性負荷の低電力駆
動回路に関し、特にプラズマディスプレイ、エレクトロ
ルミネッセンス等のフラットパネルディスプレイの駆動
回路に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a low power drive circuit for a capacitive load, and more particularly to a drive circuit for a flat panel display such as a plasma display and electroluminescence.
【0002】[0002]
【従来の技術】従来、この種の容量性負荷の駆動回路で
は、低電力化を図るため、図4に示すようにインダクタ
Lを用いた無効電力回収回路が知られている。第1のコ
ンデンサC1は負荷容量CLに比べ非常に大きく、低電
圧源とみなされ、その電圧は回路のスイッチング動作に
よって自動的に高電位側電源2の電圧V1の半分の電圧
V1/2に設定される。出力を立ち上げるには、図5の
ように第2のP型MOSトランジスタMP2をオンにし
てインダクタLと負荷容量CLで構成されるLC回路に
V1/2を印加することで行われる。LC回路の動作に
より、CLの両端の電圧はV1まで上昇する。V1まで
上昇した所で第1のP型MOSトランジスタMP1をオ
ンにしてV1にクランプする。立下りは、同様に第2の
N型MOSトランジスタMN2と第1のN型MOSトラ
ンジスタMN1を順次オンにする。立上り時にCLを充
電するためにC1からCL(V1)2 のエネルギーが流
出するが、立下り時にLC回路の動作によって全てC1
へもどされる(ACプラズマディスプレイにおけるエネ
ルギー・リカバリー・サステイン回路(EnergyR
ecovery Sustain Circuit f
or the ACPlasma Display),
L.F.Weber etal;SDI87 DIGE
ST,P92〜95,1987.参照)。2. Description of the Related Art Conventionally, in this type of capacitive load drive circuit, a reactive power recovery circuit using an inductor L as shown in FIG. 4 has been known in order to reduce power consumption. The first capacitor C1 is much larger than the load capacitance CL and is regarded as a low voltage source, and its voltage is automatically set to a voltage V1 / 2 which is half the voltage V1 of the high potential side power source 2 by the switching operation of the circuit. To be done. The output is raised by turning on the second P-type MOS transistor MP2 as shown in FIG. 5 and applying V1 / 2 to the LC circuit including the inductor L and the load capacitance CL. The voltage across CL rises to V1 due to the operation of the LC circuit. When the voltage rises to V1, the first P-type MOS transistor MP1 is turned on and clamped at V1. At the fall, similarly, the second N-type MOS transistor MN2 and the first N-type MOS transistor MN1 are sequentially turned on. Energy of CL (V1) 2 flows out from C1 to charge CL at the time of rising, but all of C1 is generated by the operation of the LC circuit at the time of falling.
Returned to (Energy Recovery Sustain Circuit in AC Plasma Display (EnergyR
recovery Sustain Circuit f
or the ACPlasma Display),
L. F. Weber et al; SDI87 DIGE
ST, P92-95, 1987. reference).
【0003】この様な無効電力回収回路は、ACメモリ
プラズマディスプレイの維持電極のようにパネル全面の
1つの電極のようにパネル全面の1つの電極で駆動する
場合、回収回路が少くて済み効率が良いが、走査電極,
データ電極のようにXYマトリクスのX本、Y本を別々
に駆動する場合、LCを用いた回収回路を個々の電極に
用いる必要があり実現は困難であった。When such a reactive power recovery circuit is driven by one electrode on the entire panel like one electrode on the entire panel like the sustain electrode of the AC memory plasma display, the number of recovery circuits is small and the efficiency is high. Good, scan electrodes,
When separately driving X and Y lines of an XY matrix like data electrodes, it is necessary to use a recovery circuit using LC for each electrode, which is difficult to realize.
【0004】[0004]
【発明が解決しようとする課題】この様に、走査電極,
データ電極には無効電力回収回路をつけることが困難で
あったため、従来は図6のように相補型MOSトランジ
スタでパルスを発生させて駆動していた。この方式で
は、無効電力は回収されないため、走査電極,データ電
極に存在する非常に大きな容量の充放電に伴う電力を無
駄に消費していた。As described above, the scanning electrodes,
Since it is difficult to attach a reactive power recovery circuit to the data electrode, conventionally, a complementary MOS transistor is used to generate and drive a pulse as shown in FIG. In this method, since the reactive power is not recovered, the power consumed by charging / discharging a very large capacity existing in the scan electrode and the data electrode is wasted.
【0005】[0005]
【課題を解決するための手段】本発明の駆動回路は、P
チャネルMOSトランジスタとNチャネルMOSトラン
ジスタの相補型MOSトランジスタを用いて容量性負荷
を駆動する回路において、一方の電源端子にインダクタ
を用いた無効電力回収回路の出力パルスを入力すること
を特徴としている。The drive circuit according to the present invention comprises a P
A circuit for driving a capacitive load using complementary MOS transistors of a channel MOS transistor and an N channel MOS transistor is characterized in that an output pulse of a reactive power recovery circuit using an inductor is input to one power supply terminal.
【0006】[0006]
【実施例】次に本発明について図面を参照して説明す
る。図1は本発明の第1の実施例の回路図を示す。無効
電力回収回路6の出力3を相補型MOSトランジスタで
構成されるドライバーIC10の高電位側電源端子9に
接続する。近年,32〜64出力、耐圧200V程度の
ドライバーICが開発されており、このドライバーIC
の各出力をXYマトリクスパネルの走査電極,データ電
極に接続する。The present invention will be described below with reference to the drawings. FIG. 1 shows a circuit diagram of a first embodiment of the present invention. The output 3 of the reactive power recovery circuit 6 is connected to the high-potential-side power supply terminal 9 of the driver IC 10 composed of complementary MOS transistors. In recent years, a driver IC with 32 to 64 outputs and a withstand voltage of about 200 V has been developed.
Of each of the outputs are connected to the scan electrodes and the data electrodes of the XY matrix panel.
【0007】図2は、第1の実施例の具体的回路を示す
図で、入力端子4を制御して、第3のP型MOSトラン
ジスタMP3をオンにすると、無効電力回収回路6で作
られた出力パルスが、XYマトリクスパネルの電極に印
加される。パネルの電極にはキャパシタンスが存在する
が、無効電力回収回路6によって充放電に伴う電力は回
収される。第3のN型MOSトランジスタMN3をオン
にすると、出力はロウに固定される。この様に表示の有
無によって入力端子を制御して、パネルの電極にパルス
を印加したりロウに固定することができる。FIG. 2 is a diagram showing a specific circuit of the first embodiment. When the input terminal 4 is controlled to turn on the third P-type MOS transistor MP3, the reactive power recovery circuit 6 is used. The output pulse is applied to the electrodes of the XY matrix panel. Although the electrodes of the panel have capacitance, the reactive power recovery circuit 6 recovers the power associated with charging and discharging. When the third N-type MOS transistor MN3 is turned on, the output is fixed to low. In this way, by controlling the input terminal depending on the presence or absence of display, it is possible to apply a pulse to the electrode of the panel or fix it to the row.
【0008】図3は、本発明の第2の実施例を示す回路
図である。本実施例ではドライバーICの出力回路8の
低電位側電源端子11に、無効電力回収回路6の出力3
を接続している。ロジックの入力信号の基準電位に対
し、負の電位のパルスをパネル電極に印加する時に用い
る。FIG. 3 is a circuit diagram showing a second embodiment of the present invention. In this embodiment, the output 3 of the reactive power recovery circuit 6 is connected to the low potential side power supply terminal 11 of the output circuit 8 of the driver IC.
Are connected. Used when applying a pulse of negative potential to the panel electrode with respect to the reference potential of the logic input signal.
【0009】データ側電極を例にとれば、一電極当りC
=40pF程度のキャパシタンスがN=640電極程度
あり(X方向640ドットの場合)、これを周波数f=
125KHz電圧V=80Vで駆動すると、N×f×C
×V2 により、通常なら20.5W程度の電力を消費す
るが、本発明により約80%の電力が回収され、4.1
W程度の消費電力で済む。Taking the data side electrode as an example, C per electrode
= About 40 pF of capacitance is about N = 640 electrodes (in the case of 640 dots in the X direction), the frequency f =
Driving at 125 KHz voltage V = 80V, N × f × C
Normally, about 20.5 W of electric power is consumed by × V 2 , but about 80% of the electric power is recovered by the present invention. 4.1
Power consumption of about W is sufficient.
【0010】[0010]
【発明の効果】以上説明したように、本発明は異なった
電極にパルスを印加するドライバーICにおいても無効
電力回収回路を使用することができ、パネル電極に存在
するキャパシタンスの充放電に伴う電力を回収すること
ができ、消費電力を大幅に減少できる。As described above, according to the present invention, the reactive power recovery circuit can be used even in the driver IC which applies the pulse to different electrodes, and the power due to the charging and discharging of the capacitance existing in the panel electrode can be reduced. It can be recovered and the power consumption can be greatly reduced.
【0011】さらに、低電力化によって電源回路の小型
化ができる他、放熱にかかわる部品等も削減することが
でき、大幅のコストダウンが可能となる。Further, the power supply circuit can be downsized by reducing the power consumption, and the components related to heat radiation can be reduced, so that the cost can be largely reduced.
【図面の簡単な説明】[Brief description of drawings]
【図1】本発明の第1の実施例のブロック図である。FIG. 1 is a block diagram of a first embodiment of the present invention.
【図2】本発明の第1の実施例の具体的回路を示す図で
ある。FIG. 2 is a diagram showing a specific circuit of the first exemplary embodiment of the present invention.
【図3】本発明の第2の実施例の具体的回路図である。FIG. 3 is a specific circuit diagram of the second embodiment of the present invention.
【図4】従来の無効電力回収回路の回路図である。FIG. 4 is a circuit diagram of a conventional reactive power recovery circuit.
【図5】従来の無効電力回収回路のタイミング波形を示
す図である。FIG. 5 is a diagram showing a timing waveform of a conventional reactive power recovery circuit.
【図6】従来のドライバー回路の回路図である。FIG. 6 is a circuit diagram of a conventional driver circuit.
6 無効電力回収回路 10 ドライバーIC 6 Reactive power recovery circuit 10 Driver IC
Claims (1)
ャネル型MOSトランジスタの相補型MOSトランジス
タを用いて容量性負荷を駆動する回路において、一方の
電源端子にインダクタを用いた無効電力回収回路を接続
することを特徴とする低電力駆動回路。1. A circuit for driving a capacitive load using complementary MOS transistors of a P-channel type MOS transistor and an N-channel type MOS transistor, wherein a reactive power recovery circuit using an inductor is connected to one power supply terminal. A low power drive circuit characterized by:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4051168A JP2946921B2 (en) | 1992-03-10 | 1992-03-10 | Low power drive circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4051168A JP2946921B2 (en) | 1992-03-10 | 1992-03-10 | Low power drive circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH05249916A true JPH05249916A (en) | 1993-09-28 |
JP2946921B2 JP2946921B2 (en) | 1999-09-13 |
Family
ID=12879298
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4051168A Expired - Lifetime JP2946921B2 (en) | 1992-03-10 | 1992-03-10 | Low power drive circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2946921B2 (en) |
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08160901A (en) * | 1994-12-07 | 1996-06-21 | Nec Corp | Driving circuit for display panel |
US5739641A (en) * | 1995-04-10 | 1998-04-14 | Nec Corporation | Circuit for driving plasma display panel |
WO1998036406A1 (en) * | 1997-02-17 | 1998-08-20 | Seiko Epson Corporation | Current-driven emissive display device and method for manufacturing the same |
US6121943A (en) * | 1995-07-04 | 2000-09-19 | Denso Corporation | Electroluminescent display with constant current control circuits in scan electrode circuit |
JP2002176168A (en) * | 2000-12-08 | 2002-06-21 | Fuji Electric Co Ltd | Semiconductor device, application circuit using the same and semiconductor integrated circuit device where the application circuit is formed |
US6717218B2 (en) | 2002-03-05 | 2004-04-06 | Sanyo Electric Co., Ltd. | Wiring structure formed in contact hole, manufacturing method therefor, and a display apparatus having the same |
US6762564B2 (en) | 2002-03-05 | 2004-07-13 | Sanyo Electric Co., Ltd. | Display apparatus |
US7009749B2 (en) | 2002-03-11 | 2006-03-07 | Sanyo Electric Co., Ltd. | Optical element and manufacturing method therefor |
US7075528B2 (en) | 2002-01-31 | 2006-07-11 | Fujitsu Hitachi Plasma Display Limited | Display panel drive circuit and plasma display |
US7078733B2 (en) | 2002-03-07 | 2006-07-18 | Sanyo Electric Co., Ltd. | Aluminum alloyed layered structure for an optical device |
US7078865B2 (en) | 2000-09-29 | 2006-07-18 | Fujitsu Hitachi Plasma Display Limited | Capacitive-load driving circuit capable of properly handling temperature rise and plasma display apparatus using the same |
US7126593B2 (en) | 2002-01-29 | 2006-10-24 | Sanyo Electric Co., Ltd. | Drive circuit including a plurality of transistors characteristics of which are made to differ from one another, and a display apparatus including the drive circuit |
US7150669B2 (en) | 2002-03-05 | 2006-12-19 | Sanyo Electric Co., Ltd. | Electroluminescent panel and a manufacturing method therefor |
US7215304B2 (en) | 2002-02-18 | 2007-05-08 | Sanyo Electric Co., Ltd. | Display apparatus in which characteristics of a plurality of transistors are made to differ from one another |
US7710351B2 (en) | 2003-09-26 | 2010-05-04 | Fujitsu Hitachi Plasma Display Limited | Load drive circuit and display device using the same |
CN102097448A (en) * | 2009-12-14 | 2011-06-15 | 乐金显示有限公司 | Organic electroluminescent display device and method for fabricating the same |
US8154199B2 (en) | 1997-02-17 | 2012-04-10 | Seiko Epson Corporation | Display apparatus |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4050724B2 (en) | 2003-07-11 | 2008-02-20 | 松下電器産業株式会社 | Display device and driving method thereof |
JP4955956B2 (en) | 2005-08-04 | 2012-06-20 | パナソニック株式会社 | Driving circuit and display device |
Citations (3)
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---|---|---|---|---|
JPS61132997A (en) * | 1984-11-30 | 1986-06-20 | ヒューレット・パッカード・カンパニー | Capacitive load driver |
JPH0266593A (en) * | 1988-09-01 | 1990-03-06 | Hitachi Ltd | Driving circuit for matrix display panel |
JPH0287189A (en) * | 1988-09-26 | 1990-03-28 | Hitachi Ltd | Matrix display panel driving circuit |
-
1992
- 1992-03-10 JP JP4051168A patent/JP2946921B2/en not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61132997A (en) * | 1984-11-30 | 1986-06-20 | ヒューレット・パッカード・カンパニー | Capacitive load driver |
JPH0266593A (en) * | 1988-09-01 | 1990-03-06 | Hitachi Ltd | Driving circuit for matrix display panel |
JPH0287189A (en) * | 1988-09-26 | 1990-03-28 | Hitachi Ltd | Matrix display panel driving circuit |
Cited By (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08160901A (en) * | 1994-12-07 | 1996-06-21 | Nec Corp | Driving circuit for display panel |
US5739641A (en) * | 1995-04-10 | 1998-04-14 | Nec Corporation | Circuit for driving plasma display panel |
US6121943A (en) * | 1995-07-04 | 2000-09-19 | Denso Corporation | Electroluminescent display with constant current control circuits in scan electrode circuit |
US8188647B2 (en) | 1997-02-17 | 2012-05-29 | Seiko Epson Corporation | Current-driven light-emitting display apparatus and method of producing the same |
US6462722B1 (en) | 1997-02-17 | 2002-10-08 | Seiko Epson Corporation | Current-driven light-emitting display apparatus and method of producing the same |
US8354978B2 (en) | 1997-02-17 | 2013-01-15 | Seiko Epson Corporation | Display apparatus |
CN1333382C (en) * | 1997-02-17 | 2007-08-22 | 精工爱普生株式会社 | Curvent-driven luminous display and mfg. method therefor |
US8154199B2 (en) | 1997-02-17 | 2012-04-10 | Seiko Epson Corporation | Display apparatus |
WO1998036406A1 (en) * | 1997-02-17 | 1998-08-20 | Seiko Epson Corporation | Current-driven emissive display device and method for manufacturing the same |
US7180483B2 (en) | 1997-02-17 | 2007-02-20 | Seiko Epson Corporation | Current-driven light-emitting display apparatus and method of producing the same |
US9305484B2 (en) | 2000-09-29 | 2016-04-05 | Hitachi Maxell, Ltd. | Capacitive-load driving circuit and plasma display apparatus using the same |
US8928646B2 (en) | 2000-09-29 | 2015-01-06 | Hitachi Maxell, Ltd. | Capacitive-load driving circuit and plasma display apparatus using the same |
US7078865B2 (en) | 2000-09-29 | 2006-07-18 | Fujitsu Hitachi Plasma Display Limited | Capacitive-load driving circuit capable of properly handling temperature rise and plasma display apparatus using the same |
US7737641B2 (en) | 2000-09-29 | 2010-06-15 | Fujitsu Hitachi Plasma Display Limited | Capacitive-load driving circuit capable of properly handling temperature rise and plasma display apparatus using the same |
JP2002176168A (en) * | 2000-12-08 | 2002-06-21 | Fuji Electric Co Ltd | Semiconductor device, application circuit using the same and semiconductor integrated circuit device where the application circuit is formed |
US7126593B2 (en) | 2002-01-29 | 2006-10-24 | Sanyo Electric Co., Ltd. | Drive circuit including a plurality of transistors characteristics of which are made to differ from one another, and a display apparatus including the drive circuit |
US7075528B2 (en) | 2002-01-31 | 2006-07-11 | Fujitsu Hitachi Plasma Display Limited | Display panel drive circuit and plasma display |
US7215304B2 (en) | 2002-02-18 | 2007-05-08 | Sanyo Electric Co., Ltd. | Display apparatus in which characteristics of a plurality of transistors are made to differ from one another |
US7150669B2 (en) | 2002-03-05 | 2006-12-19 | Sanyo Electric Co., Ltd. | Electroluminescent panel and a manufacturing method therefor |
US6762564B2 (en) | 2002-03-05 | 2004-07-13 | Sanyo Electric Co., Ltd. | Display apparatus |
US6717218B2 (en) | 2002-03-05 | 2004-04-06 | Sanyo Electric Co., Ltd. | Wiring structure formed in contact hole, manufacturing method therefor, and a display apparatus having the same |
US7078733B2 (en) | 2002-03-07 | 2006-07-18 | Sanyo Electric Co., Ltd. | Aluminum alloyed layered structure for an optical device |
US7009749B2 (en) | 2002-03-11 | 2006-03-07 | Sanyo Electric Co., Ltd. | Optical element and manufacturing method therefor |
US7710351B2 (en) | 2003-09-26 | 2010-05-04 | Fujitsu Hitachi Plasma Display Limited | Load drive circuit and display device using the same |
CN102097448A (en) * | 2009-12-14 | 2011-06-15 | 乐金显示有限公司 | Organic electroluminescent display device and method for fabricating the same |
US8404509B2 (en) | 2009-12-14 | 2013-03-26 | Lg Display Co., Ltd. | Organic electroluminescent display device and method for fabricating the same |
Also Published As
Publication number | Publication date |
---|---|
JP2946921B2 (en) | 1999-09-13 |
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