JPH0524684B2 - - Google Patents
Info
- Publication number
- JPH0524684B2 JPH0524684B2 JP63244272A JP24427288A JPH0524684B2 JP H0524684 B2 JPH0524684 B2 JP H0524684B2 JP 63244272 A JP63244272 A JP 63244272A JP 24427288 A JP24427288 A JP 24427288A JP H0524684 B2 JPH0524684 B2 JP H0524684B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- acoustic wave
- surface acoustic
- aluminum thin
- aluminum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052782 aluminium Inorganic materials 0.000 claims description 49
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 47
- 238000000034 method Methods 0.000 claims description 35
- 238000010897 surface acoustic wave method Methods 0.000 claims description 34
- 239000010409 thin film Substances 0.000 claims description 31
- 238000005530 etching Methods 0.000 claims description 28
- 239000013078 crystal Substances 0.000 claims description 25
- PSHMSSXLYVAENJ-UHFFFAOYSA-N dilithium;[oxido(oxoboranyloxy)boranyl]oxy-oxoboranyloxyborinate Chemical compound [Li+].[Li+].O=BOB([O-])OB([O-])OB=O PSHMSSXLYVAENJ-UHFFFAOYSA-N 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 229920002120 photoresistant polymer Polymers 0.000 claims description 5
- 238000012545 processing Methods 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000000206 photolithography Methods 0.000 claims description 3
- 230000001902 propagating effect Effects 0.000 claims description 3
- 239000010408 film Substances 0.000 description 23
- 239000000243 solution Substances 0.000 description 12
- 238000011161 development Methods 0.000 description 9
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- 239000012670 alkaline solution Substances 0.000 description 6
- 238000000059 patterning Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、弾性表面波装置の製法に関し、特
に、アルミニウム電極を新規なエツチング法で作
製することによる弾性表面波装置の製法に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for manufacturing a surface acoustic wave device, and particularly to a method for manufacturing a surface acoustic wave device by manufacturing an aluminum electrode using a novel etching method.
［従来の技術］
弾性表面波装置は、フイルタ、発振器、遅延線
等に利用され、今後、移動通信分野の拡大に伴
い、装置の小型化、低消費電力化が要求され、受
動回路部品としての弾性表面波装置の利用分野も
更に拡大するものと思われる。弾性表面波装置
は、用いる圧電体結晶基板の特性に強く依存し、
現在最も注目されている基板は、周波数温度特性
が零で電気機械結合係数も大きい方位を有する四
硼酸リチウム（Li2B4O7）結晶であり、微細なパ
ターンからなるアルミニウム電極をその結晶基板
の上に形成して、弾性表面波装置を形成するもの
である。この四硼酸リチウム結晶は、酸、水にわ
ずかに溶解するために、デバイス作製工程で通常
使用する酸、純水を多量には使用できない。その
ために、四硼酸リチウムのデバイス化が急速には
進展しない理由の１つである。[Prior art] Surface acoustic wave devices are used in filters, oscillators, delay lines, etc. In the future, with the expansion of the mobile communications field, there will be a demand for smaller devices and lower power consumption, and surface acoustic wave devices will be used as passive circuit components. It is expected that the field of application of surface acoustic wave devices will further expand. Surface acoustic wave devices strongly depend on the characteristics of the piezoelectric crystal substrate used.
The substrate that is currently attracting the most attention is lithium tetraborate (Li 2 B 4 O 7 ) crystal, which has an orientation with zero frequency temperature characteristics and a large electromechanical coupling coefficient. A surface acoustic wave device is formed by forming the surface acoustic wave device on top of the surface acoustic wave device. Since this lithium tetraborate crystal is slightly soluble in acid and water, it is not possible to use large amounts of acid and pure water that are normally used in the device manufacturing process. This is one of the reasons why the development of devices using lithium tetraborate has not progressed rapidly.
従来の弾性表面波装置の製法は、紫外線露光に
よるリフトオフ法［電子情報通信学会技術研究報
告 信学技報第87巻第46号（1987年５月25日発
行）参照］で行なわれている。また、特開昭60−
259011及び259012を参照する。 Conventional surface acoustic wave devices are manufactured by a lift-off method using ultraviolet light exposure [see Institute of Electronics, Information and Communication Engineers Technical Report Vol. 87, No. 46 (published May 25, 1987)]. Also, JP-A-60-
See 259011 and 259012.
即ち、第３図ａに示されるように、従来のリフ
トオフ法では、圧電体基板１を表面研摩し、洗浄
し、その表面にレジスタ膜２を塗布形成し、プリ
ベークし、その上に、フオトマスク４をかけ、紫
外線を照射し、アルカリ溶液で現像し、純水で洗
浄し、レジストパターン２を形成した（即ち、所
定パターンをマスクした）後に、アルミニウム薄
膜３を、真空蒸着或いはスパツタリング法で形成
せしめ、レジスタ膜２をアセトン或いは剥離液で
除去し、レジストパターン部分のアルミニウム薄
膜を除去し、レジストパターン以外のアルミニウ
ム薄膜３を電極として形成し、使用するもので
る。この方法では、四硼酸リチウムがアルミニウ
ムの燐酸系エツチング液（燐酸、硝酸、酢酸溶液
等）に溶解するために、それを避けて、用いられ
ている方法で、工程数は、通常のエツチング法よ
り少ないが、レジスト膜２とアルミニウム薄膜と
を剥離する際に、弱い超音波をかけて徐々に剥離
しないとき、きれいにパターニングできない。そ
して、四硼酸リチウム基板内に多数個の素子を形
成する必要ある場合、位置によるパターニング性
がばらつく等の問題点が生じる。 That is, in the conventional lift-off method, as shown in FIG. After forming a resist pattern 2 by applying ultraviolet rays, developing with an alkaline solution, and washing with pure water to form a resist pattern 2 (that is, masking a predetermined pattern), an aluminum thin film 3 is formed by vacuum evaporation or sputtering. The resist film 2 is removed with acetone or a stripping solution, the aluminum thin film in the resist pattern portion is removed, and the aluminum thin film 3 other than the resist pattern is formed as an electrode for use. In this method, lithium tetraborate is dissolved in a phosphoric acid-based etching solution for aluminum (phosphoric acid, nitric acid, acetic acid solution, etc.), so it is avoided and the number of steps is less than that of the normal etching method. Although it is rare, when the resist film 2 and the aluminum thin film are peeled off, if weak ultrasonic waves are not applied and the thin aluminum film is not gradually peeled off, a clean pattern cannot be obtained. When it is necessary to form a large number of elements within a lithium tetraborate substrate, problems arise such as variation in patterning properties depending on position.
一方、ニオブ酸リチウム、タルタン酸リチウ
ム、水晶等の圧電体結晶へのアルミニウム電極形
成のためには、通常のエツチング法が用いられ、
第３図ｂに示すような工程で行ない、これは、圧
電体結晶１を研摩、洗浄し、先ず、その全表面上
に、アルミニウム薄膜３を真空蒸着或いはスパツ
タリング法で形成し、その上にレジスト膜２を形
成し、フオトマスク４を通して、紫外線５を照射
した後、アルカリ現像液で、不要レジスト膜部分
を除去し、現像し、リンスし、レジスト膜パター
ンを形成した後、不要電極部を燐酸系エツチング
液でエツチングした後、レジスト膜部分を除去
し、アルミニウム電極パターン６が、得られる。 On the other hand, ordinary etching methods are used to form aluminum electrodes on piezoelectric crystals such as lithium niobate, lithium tartanate, and quartz.
The process is carried out as shown in FIG. 3b, in which the piezoelectric crystal 1 is polished and cleaned, and a thin aluminum film 3 is formed on its entire surface by vacuum evaporation or sputtering, and a resist is applied on top of it. After forming a film 2 and irradiating ultraviolet rays 5 through a photomask 4, unnecessary resist film parts are removed with an alkaline developer, developed, and rinsed. After forming a resist film pattern, unnecessary electrode parts are removed using a phosphoric acid-based solution. After etching with an etching solution, the resist film portion is removed to obtain an aluminum electrode pattern 6.
［発明が解決しようとする問題点］
本発明では、以上の問題を解決するために、圧
電体結晶表面にアルミニウム薄膜を形成し、その
上に、ポジ型レジスト膜を形成し、フオトマスク
を通して、紫外線を照射し、有機系アルカリ現像
液で処理することにより、現像、エツチングを同
じ工程で行なえる弾性表面波装置の製法を提供す
ることを目的にする。本発明は、特に四硼酸リチ
ウム単結晶等を弾性表面波装置等に加工する際の
電極加工方法を提供することを目的にする。そし
て、本発明は、弾性表面波装置等のフオトリソグ
ラフイ法でアルミニウム薄膜をパターニングする
際のアルミニウム薄膜のエツチング法を提供する
ことを目的にする。[Problems to be Solved by the Invention] In the present invention, in order to solve the above problems, an aluminum thin film is formed on the piezoelectric crystal surface, a positive resist film is formed thereon, and ultraviolet rays are exposed through a photomask. The object of the present invention is to provide a method of manufacturing a surface acoustic wave device that can perform development and etching in the same process by irradiating the surface of the surface of the surface of the surface of the surface of the surface of the surface of the surface of the surface of the surface of the surface of the surface of the surface of the surface of the surface of the surface of the surface of the surface of the surface of the surface of the surface of the surface of the surface of the surface of the surface of the surface of the surface of the surface of the surface of the surface of the surface of the surface of the surface of the surface of the surface of the surface of the surface of the surface of the surface of the surface of a surface acoustic wave device to an organic alkaline developer. An object of the present invention is to provide an electrode processing method particularly when processing a lithium tetraborate single crystal or the like into a surface acoustic wave device or the like. Another object of the present invention is to provide a method for etching an aluminum thin film when patterning the aluminum thin film by photolithography using a surface acoustic wave device or the like.
［問題点を解決するための手段］
本発明の要旨とするものは、四硼酸リチウム結
晶基板の表面に、アルミニウム薄膜を形成し、そ
のアルミニウム薄膜を、フオトリソグラフ法を用
いて、フオトレジストとして、ポジ型レジストを
用い、有機アルカリ系現像液をエツチング液とし
て用いて、エツチング処理と現像処理を同時に行
ない、直後に、洗浄処理を行ない、レジスト除去
することにより、所望のアルミニウム薄膜パター
ンの電極を、前記結晶基板の表面に形成すること
を特徴とする弾性表面波を励起、受信、反射、伝
搬するための電極を有する弾性表面波装置の製法
である。[Means for Solving the Problems] The gist of the present invention is to form an aluminum thin film on the surface of a lithium tetraborate crystal substrate, and to apply the aluminum thin film as a photoresist using a photolithography method. Etching and development are performed simultaneously using a positive resist and an organic alkaline developer as an etching solution. Immediately thereafter, a cleaning treatment is performed to remove the resist, thereby forming an electrode with a desired aluminum thin film pattern. This is a method for manufacturing a surface acoustic wave device having electrodes for exciting, receiving, reflecting, and propagating surface acoustic waves, which are formed on the surface of the crystal substrate.
［作用］
本発明によると、四硼酸リチウム結晶が耐アル
カリ性で、それに対してアルミニウム電極は、ア
ルカリ溶液でもエツチンク可能である。即ち、四
硼酸リチウムは、PH12程度以上のアルカリ溶液に
もほとんど溶解しないので、有機アルカリ系現像
液をエツチング液として用い、ポジ型フオトマス
クを通して紫外線を、レジスト膜を被せたアルミ
ニウム薄膜に、照射したものを、エツチング処理
すると、ポジ型パターンのレジスト膜−アルミニ
ウム薄膜が、結晶表面上に形成され、レジスト膜
を剥離除去すると、所定パターンのアルミニウム
電極を有する圧電体結晶が得られる。[Function] According to the present invention, the lithium tetraborate crystal is alkali resistant, whereas the aluminum electrode can be etched even with an alkaline solution. In other words, since lithium tetraborate hardly dissolves even in alkaline solutions with a pH of about 12 or higher, an organic alkaline developer was used as an etching solution, and an aluminum thin film covered with a resist film was irradiated with ultraviolet light through a positive photomask. When this is etched, a positive pattern of a resist film-aluminum thin film is formed on the crystal surface, and when the resist film is peeled off, a piezoelectric crystal having aluminum electrodes in a predetermined pattern is obtained.
以上のように、本発明による弾性表面波装置の
製法では、有機アルカリ系現像液で、現像、エツ
チングを一緒に行なわれる。更に、本発明のアル
ミニウムパターンの作製法は、通常のエツチング
法の工程とほとんど同じ処理を使用するために、
その他の弾性表面波装置基板結晶即ち、ニオブ酸
リチウム、タンタル酸リチウム、水晶等を基板材
料に用いた弾性表面波装置製造ラインを、四硼酸
リチウム結晶基板材料での製造に同じように、使
用できるものである。 As described above, in the method for manufacturing a surface acoustic wave device according to the present invention, development and etching are performed together using an organic alkaline developer. Furthermore, since the method for producing an aluminum pattern of the present invention uses almost the same process as the usual etching method,
Surface acoustic wave device manufacturing lines using other surface acoustic wave device substrate crystals, such as lithium niobate, lithium tantalate, quartz, etc., as substrate materials can be similarly used for manufacturing with lithium tetraborate crystal substrate materials. It is something.
本発明により、アルミニウム薄膜をフオトエツ
チングでパターン形成するには、ポジ型レジスト
とポジ型レジスト現像液を使用することで、レジ
スト膜現像とアルミニウム薄膜のエツチング処理
を同じ工程で行なえるため、通常のフオトエツチ
ング工程よりも、工程数を少なくすることができ
る。 According to the present invention, when patterning an aluminum thin film by photoetching, by using a positive resist and a positive resist developer, resist film development and etching of the aluminum thin film can be performed in the same process. The number of steps can be reduced compared to the photoetching step.
本発明は、特に、四硼酸リチウム単結晶基板表
面に、弾性表面波を励振、受信、反射、伝搬する
ためのアルミニウムを主成分とする電極を形成す
るために使用できるが、他の圧電体結晶、更に、
他のデバイスに、アルミニウム薄膜電極を形成す
るためにも、利用できるものである。 In particular, the present invention can be used to form an aluminum-based electrode for exciting, receiving, reflecting, and propagating surface acoustic waves on the surface of a lithium tetraborate single crystal substrate; , furthermore,
It can also be used to form aluminum thin film electrodes in other devices.
本発明によると、アルミニウム薄膜を、圧電体
単結晶表面に蒸着などで形成し、その上に、ポジ
型レジスト膜を形成したものに対して、フオトリ
ングハフイ法で、フオトマスクを通して、紫外線
等を照射し、次に、有機アルカリ系溶液をエツチ
ング液として用いて、処理すると、紫外線を照射
した部分のレジスト膜は、溶解除去され、従つ
て、その下のアルミニウム薄膜が、エツチングさ
れ、即ち、レジスト膜−アルミニウム薄膜は、現
像−エツチングが同一工程で行なわれる。 According to the present invention, an aluminum thin film is formed on the surface of a piezoelectric single crystal by vapor deposition or the like, and a positive resist film is formed thereon, and then ultraviolet rays, etc. are irradiated through a photomask using the photoring Huffy method. Then, when processing is performed using an organic alkaline solution as an etching solution, the resist film in the area irradiated with ultraviolet rays is dissolved and removed, and the underlying aluminum thin film is etched, that is, the resist film is removed. - Aluminum thin films are developed and etched in the same step.
次に、アルミニウム薄膜パターンの上に残つた
レジスト膜を剥離、除去すると、表面に所定パタ
ーンのアルミニウム電極を有する弾性表面波装置
が得られる。 Next, the resist film remaining on the aluminum thin film pattern is peeled off and removed to obtain a surface acoustic wave device having a predetermined pattern of aluminum electrodes on the surface.
本発明者等は、アルミニウム薄膜をエツチング
するエツチング溶液について、様々なアルカリ溶
液でアルミニウム薄膜のエツチング試験を行なつ
た。その結果、NaOHやKOH等の無機アルカリ
水溶液では、レジスト膜が溶解しないPHでは、ア
ルミニウムのエツチング速度が遅く、電極形成が
困難であつた。これに対して、ポジ型レジストを
有機アルカリ系現像液でエツチングすると、比較
的に容易に電極形成ができ、且つレジスト現像と
同じ工程でエツチングを行なうことができる。そ
のために、従来の電極形成工程よりも、少ないも
のとすることができる。 The present inventors conducted etching tests on aluminum thin films using various alkaline solutions regarding etching solutions for etching aluminum thin films. As a result, when using an inorganic alkali aqueous solution such as NaOH or KOH at a pH where the resist film does not dissolve, the etching rate of aluminum was slow and it was difficult to form an electrode. On the other hand, when a positive resist is etched with an organic alkaline developer, electrodes can be formed relatively easily, and etching can be performed in the same process as developing the resist. Therefore, the number of steps can be reduced compared to the conventional electrode forming process.
即ち、エツチング溶液として、有機アルカリ系
現像液を用いることにより、レジスト膜の現像と
アルミニウム薄膜のエツチングを同一工程で行な
い、アルミニウム電極のパターン作製工程を簡略
化することのできたものである。 That is, by using an organic alkaline developer as the etching solution, the development of the resist film and the etching of the aluminum thin film can be performed in the same process, thereby simplifying the process of forming the pattern of the aluminum electrode.
即ち、四硼酸リチウム単結晶表面にアルミニウ
ム薄膜を形成し、その上にポジ型レジスト膜を形
成したものに対して、現像処理を行なう。 That is, an aluminum thin film is formed on the surface of a lithium tetraborate single crystal, and a positive resist film is formed thereon, and then a development process is performed.
本発明により、ポジ型レジスト膜として、使用
されるものとしては、例えば、東京応化社製の
OFPR−２、又はOFPR−800或いはシプレー社
製マイクロポジツト（MICROPOSIT）1400等を
用いることができる。 According to the present invention, examples of the positive resist film used include those manufactured by Tokyo Ohka Co., Ltd.
OFPR-2, OFPR-800, MICROPOSIT 1400 manufactured by Shipley, etc. can be used.
本発明に利用する有機アルカリ系水溶現像液と
しては、市販のポジ型フオトレジストを現像する
ために用いるアルカリ性現像液であり、そして上
記のポジ型フオトレジストのための現像液、そし
て、具体的には、東京応化社製のNMD−３、シ
プレー社製マイクロポジツト（MICROPOSIT）
デベロツパーMF−319等を利用出来るが、これ
らに限定されるものではない。 The organic alkaline aqueous developer used in the present invention is an alkaline developer used for developing a commercially available positive photoresist, and the developer for the above-mentioned positive photoresist, and specifically NMD-3 manufactured by Tokyo Ohka Co., Ltd., Microposit (MICROPOSIT) manufactured by Shipley
Developers such as MF-319 can be used, but the invention is not limited to these.
即ち、本発明は、電極材料に、アルカリ溶液に
可溶な金属薄膜を用いることができる。 That is, in the present invention, a metal thin film soluble in an alkaline solution can be used as an electrode material.
本発明の弾性表面波装置の製法は、四硼酸リチ
ウム結晶を基板とするデバイスの作製のみなら
ず、アルミニウム薄膜を利用するすべての分野に
おいて、利用し、適用することができるものであ
り、適用面は、弾性表面波装置に限定されるもの
ではない。 The method for producing a surface acoustic wave device of the present invention can be used and applied not only to the production of devices using lithium tetraborate crystals as a substrate, but also to all fields that use aluminum thin films, and has a wide range of applications. is not limited to surface acoustic wave devices.
次に、本発明による弾性表面波装置の製法を、
具体的な実施例により、説明するが、本発明は、
その説明により限定されるものではない。 Next, the method for manufacturing the surface acoustic wave device according to the present invention is as follows.
The present invention will be explained using specific examples.
It is not intended to be limited by that description.
実施例 １
第１図に本発明方法によるアルミニウム電極パ
ターン形成の工程図を示す。Example 1 FIG. 1 shows a process diagram for forming an aluminum electrode pattern by the method of the present invention.
四硼酸リチウム基板１を用意し、それを表面研
摩し、洗浄する。次に、その表面上にアルミニウ
ム薄膜２を蒸着し、更に、その上に、シプレー社
製の1400−31のレジスト材料で、レジスト膜３を
塗布形成し、プリベークする。次に、所定電極パ
ターンを有するフオトマスク４を掛け、紫外線で
露光する。露光処理した基板１を、シプレー社製
のMF−319或いは東京応用化学社製NMD−３の
現像液をエツチング溶液として用いて、エツチン
グ処理を行ない、現像、エツチング、リンスを一
緒に行なつた。更に、洗浄処理を加え、所定パタ
ーンで残つたレジスト膜３を剥離すると、所定ア
ルミニウム電極６を有する四硼酸リチウム結晶が
得られた。 A lithium tetraborate substrate 1 is prepared, and its surface is polished and cleaned. Next, an aluminum thin film 2 is deposited on the surface thereof, and a resist film 3 is further applied thereon using resist material 1400-31 manufactured by Shipley Co., Ltd., and prebaked. Next, a photomask 4 having a predetermined electrode pattern is applied and exposed to ultraviolet light. The exposed substrate 1 was etched using a developing solution of MF-319 manufactured by Shipley Co., Ltd. or NMD-3 manufactured by Tokyo Applied Chemical Co., Ltd. as an etching solution, and development, etching, and rinsing were performed at the same time. Furthermore, by applying a cleaning treatment and peeling off the resist film 3 remaining in a predetermined pattern, a lithium tetraborate crystal having a predetermined aluminum electrode 6 was obtained.
このようにして、45°回転ＸカツトＺ伝搬の四
硼酸リチウム結晶基板上に弾性表面波共振子（イ
ンターデジタル電極周期：40μｍ、グレーテイン
グ反応器：20μｍ）を作製し、その結晶内の共振
周波数分布を測定した。その結果を第２図のグラ
フに示した。それによると、基板内及び基板間で
の共振周波数のバラツキが、0.1％以内という良
好な結果が得られた。 In this way, a surface acoustic wave resonator (interdigital electrode period: 40 μm, grating reactor: 20 μm) was fabricated on a 45° rotated X-cut Z-propagated lithium tetraborate crystal substrate, and the resonance frequency within the crystal was The distribution was measured. The results are shown in the graph of FIG. According to the results, good results were obtained in which the variation in resonance frequency within and between substrates was within 0.1%.
また、この弾性表面波装置共振子の伝送特性を
測定すると、第４図に示す曲線であつた。 Furthermore, when the transmission characteristics of this surface acoustic wave device resonator were measured, the curves shown in FIG. 4 were obtained.
［発明の効果］
本発明による弾性表面波装置の製法は、
第１に、フオトレジストの現像工程とアルミニ
ウム薄膜のエツチング工程を同時に行なうこと
で、アルミニウム電極パターニング工程を簡略化
でき、従来よりも工程数を少なくすることができ
たこと、
第２に、四硼酸リチウム結晶上にアルミニウム
電極パターンをフオトエツチング法で形成でき、
弾性表面波特性のすぐれた弾性表面波装置が作製
できること
などの技術的な効果が得られた。[Effects of the Invention] First, the method for manufacturing a surface acoustic wave device according to the present invention can simplify the aluminum electrode patterning process by performing the photoresist development process and the aluminum thin film etching process at the same time. Second, the aluminum electrode pattern can be formed on the lithium tetraborate crystal by photoetching.
Technical effects such as the ability to fabricate a surface acoustic wave device with excellent surface acoustic wave characteristics were obtained.
第１図は、本発明による四硼酸リチウム結晶上
のアルミニウム薄膜の現像エツチング法を示すも
のである。第２図は、本発明の弾性表面波装置の
製法により作製された弾性表面波装置のキヤビテ
イ型共振子における共振周波数分布を測定した結
果をグラフに示したものである。第３図ａ，ｂ
は、従来の電極パターン形成法をフローシートで
示したものである。第４図は、本発明の実施例で
作製した弾性表面波装置の伝送特性を測定した結
果を示すものである。
［主要部分の符号の説明］、１……圧電体基板、
２……レジスト、３……アルミニウム薄膜、４…
…フオトマスク、５……紫外線、６……アルミニ
ウム電極。
FIG. 1 shows a method of developing and etching a thin aluminum film on a lithium tetraborate crystal according to the present invention. FIG. 2 is a graph showing the results of measuring the resonant frequency distribution in a cavity type resonator of a surface acoustic wave device manufactured by the surface acoustic wave device manufacturing method of the present invention. Figure 3 a, b
is a flow sheet showing a conventional electrode pattern forming method. FIG. 4 shows the results of measuring the transmission characteristics of a surface acoustic wave device manufactured in an example of the present invention. [Explanation of symbols of main parts], 1... piezoelectric substrate,
2...Resist, 3...Aluminum thin film, 4...
...Photomask, 5...Ultraviolet light, 6...Aluminum electrode.
Claims (1)
ウム薄膜を形成し、そのアルミニウム薄膜を、フ
オトリソグラフ法を用いて、フオトレジストとし
て、ポジ型レジストを用い、有機アルカリ系現像
液をエツチング液として用いて、エツチング処理
と現像処理を同時に行ない、直後に、洗浄処理を
行ない、レジスト除去することにより、正確に、
所望のアルミニウム薄膜パターンの電極を、前記
結晶基板の表面に形成することを特徴とする弾性
表面波を励起、受信、反射、伝搬するための電極
を有する弾性表面波装置の製法。1. An aluminum thin film is formed on the surface of a lithium tetraborate crystal substrate, and the aluminum thin film is etched using a photolithography method, using a positive resist as a photoresist, and using an organic alkaline developer as an etching solution. By performing etching processing and developing processing at the same time, and immediately afterward, performing cleaning processing to remove the resist, it is possible to accurately
A method for manufacturing a surface acoustic wave device having electrodes for exciting, receiving, reflecting, and propagating surface acoustic waves, the method comprising forming electrodes with a desired aluminum thin film pattern on the surface of the crystal substrate.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63244272A JPH0294807A (en) | 1988-09-30 | 1988-09-30 | Manufacture of surface acoustic wave device |
| GB8921245A GB2223329B (en) | 1988-09-30 | 1989-09-20 | An interdigital electrode for surface wave device and method of fabricating the same |
| DE3932451A DE3932451A1 (en) | 1988-09-30 | 1989-09-28 | DOUBLE-COMBED ELECTRODE FOR SURFACE WAVE DEVICES AND MANUFACTURING METHODS THEREFOR |
| FR898912773A FR2637428B1 (en) | 1988-09-30 | 1989-09-29 | FORBIDDEN ELECTRODE FOR SURFACE WAVE DEVICE AND METHOD FOR THE PRODUCTION THEREOF |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63244272A JPH0294807A (en) | 1988-09-30 | 1988-09-30 | Manufacture of surface acoustic wave device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0294807A JPH0294807A (en) | 1990-04-05 |
| JPH0524684B2 true JPH0524684B2 (en) | 1993-04-08 |
Family
ID=17116281
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63244272A Granted JPH0294807A (en) | 1988-09-30 | 1988-09-30 | Manufacture of surface acoustic wave device |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPH0294807A (en) |
| DE (1) | DE3932451A1 (en) |
| FR (1) | FR2637428B1 (en) |
| GB (1) | GB2223329B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04200007A (en) * | 1990-11-29 | 1992-07-21 | Nikko Kyodo Co Ltd | Method for forming metallic electrode |
| US6625855B1 (en) * | 1999-10-06 | 2003-09-30 | Murata Manufacturing Co., Ltd. | Method for producing surface acoustic wave device |
| CN109842393A (en) * | 2018-12-25 | 2019-06-04 | 泉州三安半导体科技有限公司 | The method of exposure effect and the manufacturing method of interdigital transducer are improved in interdigital transducer manufacturing process |
| CN111327284A (en) * | 2020-02-18 | 2020-06-23 | 厦门市三安集成电路有限公司 | Preparation method of interdigital electrode |
| CN112741640B (en) * | 2020-12-10 | 2022-11-04 | 中国科学院深圳先进技术研究院 | Real-time ultrasonic stimulation electric signal recording chip and preparation method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5134651A (en) * | 1974-09-19 | 1976-03-24 | Toko Inc | HYOMENHAFUIRUTAOYOBISONOSEIZOHOHO |
| JPS57136321A (en) * | 1981-02-18 | 1982-08-23 | Hitachi Ltd | Manufacture of resist stencil mask for lift-off |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3639185A (en) * | 1969-06-30 | 1972-02-01 | Ibm | Novel etchant and process for etching thin metal films |
| US3944421A (en) * | 1973-10-03 | 1976-03-16 | Horizons Incorporated, A Division Of Horizons Research Incorporated | Process for simultaneous development and etch of photoresist and substrate |
| US3944420A (en) * | 1974-05-22 | 1976-03-16 | Rca Corporation | Generation of permanent phase holograms and relief patterns in durable media by chemical etching |
| JPS59121987A (en) * | 1982-12-28 | 1984-07-14 | Toshiba Corp | Manufacture of device using lithium borate crystal |
| JPH0716141B2 (en) * | 1984-06-05 | 1995-02-22 | 株式会社東芝 | Surface acoustic wave device |
| JPS60259012A (en) * | 1984-06-05 | 1985-12-21 | Toshiba Corp | Surface acoustic wave device |
| JPS63240507A (en) * | 1987-03-27 | 1988-10-06 | Nippon Mining Co Ltd | Production of device |
-
1988
- 1988-09-30 JP JP63244272A patent/JPH0294807A/en active Granted
-
1989
- 1989-09-20 GB GB8921245A patent/GB2223329B/en not_active Expired - Fee Related
- 1989-09-28 DE DE3932451A patent/DE3932451A1/en not_active Withdrawn
- 1989-09-29 FR FR898912773A patent/FR2637428B1/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5134651A (en) * | 1974-09-19 | 1976-03-24 | Toko Inc | HYOMENHAFUIRUTAOYOBISONOSEIZOHOHO |
| JPS57136321A (en) * | 1981-02-18 | 1982-08-23 | Hitachi Ltd | Manufacture of resist stencil mask for lift-off |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2223329B (en) | 1993-03-24 |
| DE3932451A1 (en) | 1990-05-10 |
| JPH0294807A (en) | 1990-04-05 |
| FR2637428A1 (en) | 1990-04-06 |
| FR2637428B1 (en) | 1992-08-28 |
| GB8921245D0 (en) | 1989-11-08 |
| GB2223329A (en) | 1990-04-04 |
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