JPH05243195A - Method of making beveled part of si wafer mirror surface and device thereof - Google Patents
Method of making beveled part of si wafer mirror surface and device thereofInfo
- Publication number
- JPH05243195A JPH05243195A JP4581892A JP4581892A JPH05243195A JP H05243195 A JPH05243195 A JP H05243195A JP 4581892 A JP4581892 A JP 4581892A JP 4581892 A JP4581892 A JP 4581892A JP H05243195 A JPH05243195 A JP H05243195A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- ozone
- wafers
- beveled
- mirror surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明はＳｉウエハーのベベリン
グ部分の鏡面化方法および装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and apparatus for mirroring the beveled portion of a Si wafer.
【０００２】[0002]
【従来の技術】Ｓｉウエハーのベベリング部分の鏡面加
工は、硝酸による酸化、フッ酸（ＨＦ）によるエッチン
グで行っているが、酸化剤である硝酸が液体であるた
め、ベベリング部分だけでなくポリッシング済みのＳｉ
ウエハー面にまで硝酸が染み込んで酸化してしまうとい
う欠点があった。2. Description of the Related Art Mirror finishing of the beveled portion of a Si wafer is carried out by oxidation with nitric acid and etching with hydrofluoric acid (HF). However, since nitric acid, which is an oxidant, is a liquid, polishing is performed not only on the beveled portion Si
There was a drawback in that nitric acid penetrated into the wafer surface and was oxidized.
【０００３】[0003]
【発明が解決しようとする課題】上記問題点に鑑み、本
発明ではＳｉウエハーベベリングの酸化にオゾンを使用
し、ポリッシング面を酸化せずにベベリング面を鏡面加
工することを目的とする。In view of the above problems, it is an object of the present invention to use ozone for the oxidation of Si wafer beveling and to mirror-finish the beveling surface without oxidizing the polishing surface.
【０００４】[0004]
【課題を解決するための手段】本発明の要旨とするとこ
ろは下記のとおりである。 （１） Ｓｉウエハーのベベリング部分の鏡面化にあた
り、オゾンにより酸化し、フッ酸（ＨＦ）と酢酸（ＣＨ
3 ＣＯＯＨ）によりエッチングして鏡面化することを特
徴とするＳｉウエハーのベベリング部分の鏡面化方法。The subject matter of the present invention is as follows. (1) When mirroring the beveled portion of a Si wafer, it is oxidized by ozone to form hydrofluoric acid (HF) and acetic acid (CH
(3 ) COOH) etching to be mirror-finished.
【０００５】（２） Ｓｉウエハーのベベリング部分の
鏡面化装置において、タンク１０内にオゾン発生装置
１、４を設け、タンク内溶液がフッ酸（ＨＦ）と酢酸
（ＣＨ3ＣＯＯＨ）の混合溶液３であることを特徴とす
るＳｉウエハーのベベリング部分の鏡面化装置。(2) In the mirroring device for the beveling portion of the Si wafer, ozone generators 1 and 4 are provided in the tank 10, and the solution in the tank is a mixed solution 3 of hydrofluoric acid (HF) and acetic acid (CH 3 COOH). A mirroring device for a beveled portion of a Si wafer.
【０００６】[0006]
【作用】以下本発明について説明する。従来の方法の実
施の態様を図２示す。従来の方法では端面７の面取り後
の、すなわちベベリング後のＳｉウエハー５を重ねて両
側から押さえ板６で押さえつけ、それを硝酸溶液８中に
入れて酸化を行い、次いでＨＦ中に入れてエッチングを
行って鏡面加工を施してきた。鏡面とは０．１μｍＲｍ
ａｘ以下の粗さ面のことである。しかしこの方法だと、
しばしばＳｉウエハーの間９に硝酸が入り込み、ポリッ
シング済みのＳｉウエハー面を酸化し、不良品の発生原
因になっていた。The present invention will be described below. An embodiment of the conventional method is shown in FIG. In the conventional method, the Si wafers 5 after chamfering the end faces 7, that is, after beveling, are stacked and pressed by the pressing plates 6 from both sides, which are put in a nitric acid solution 8 for oxidation, and then put in HF for etching. I went and gave it a mirror finish. Mirror surface is 0.1 μm Rm
It is a roughness surface of ax or less. But this way,
Nitric acid often entered between the Si wafers 9 to oxidize the polished Si wafer surface, which was a cause of defective products.
【０００７】本発明はオゾンによりＳｉウエハー５の端
面７を酸化してＳｉＯ2 を生成させ、ＨＦ＋ＣＨ3 ＣＯ
ＯＨ中でＳｉＯ2 を溶解除去する方法である。この方法
であればオゾンが気体であるため気体の表面張力等によ
り、Ｓｉウエハーの間９に酸化剤であるオゾンが入り込
まず、Ｓｉウエハー面は良好な面が維持される。この鏡
面化方法によりデバイス工程での端面からの割れ欠け防
止が期待できる。In the present invention, the end surface 7 of the Si wafer 5 is oxidized by ozone to generate SiO 2 and HF + CH 3 CO
This is a method of dissolving and removing SiO 2 in OH. According to this method, since ozone is a gas, the surface tension of the gas does not allow ozone, which is an oxidant, to enter the space 9 between the Si wafers, and the Si wafer surface is kept in a good condition. This mirror-finishing method can be expected to prevent cracking and chipping from the end face in the device process.
【０００８】本発明の実施の態様を図１に示す。ベベリ
ング済みのＳｉウエハー５を重ねて両側から押さえつけ
たものをＨＦ＋ＣＨ3 ＣＯＯＨ中に入れ、下にテフロン
発泡体４を置き、オゾン発生装置１、すなわちプラズマ
を酸素（Ｏ2 ）雰囲気中で発生させてオゾン（Ｏ3 ）を
作る装置、によりテフロン発泡体を通してＳｉウエハー
にバブリングを行う。オゾン流量はバルブでコントロー
ルする。オゾンによりＳｉウエハー端面７を酸化し、Ｈ
Ｆ＋ＣＨ3 ＣＯＯＨでエッチングして鏡面化加工するも
のであるオゾン量の上限は、１ウエハー当たりのオゾン
量が約１ｍ3 ／ｍｉｎでエッチレートが１０μｍ／ｍｉ
ｎ以下となり飽和するので、１ウエハー当たり１ｍ3 ／
ｍｉｎを上限とする。また下限は１ウエハー当たりのオ
ゾン量が約０．０１ｍ3／ｍｉｎでエッチレートがやは
り１０μｍ／ｍｉｎ以下になり実用的でないので、０．
０１ｍ3 ／ｍｉｎを下限とする。An embodiment of the present invention is shown in FIG. The beveled Si wafer 5 is piled up and pressed from both sides, put in HF + CH 3 COOH, and the Teflon foam 4 is placed under the ozone generator 1, that is, plasma is generated in an oxygen (O 2 ) atmosphere. Bubbling is performed on the Si wafer through the Teflon foam using an apparatus for producing ozone (O 3 ). The ozone flow rate is controlled by a valve. Oxide the end surface 7 of the Si wafer with ozone to generate H
The upper limit of the amount of ozone that is used for etching with F + CH 3 COOH for mirror surface processing is about 1 m 3 / min of ozone per wafer, and the etching rate is 10 μm / mi.
Since it becomes less than n and saturates, 1 m 3 / wafer / wafer
The upper limit is min. The lower limit is about 0.01 m 3 / min per wafer, and the etching rate is still less than 10 μm / min, which is not practical.
The lower limit is 01 m 3 / min.
【０００９】ＨＦの配合量は重量パーセントで７０〜２
０％で、７０％超ではエッチング面が荒れ、２０％未満
では加工能率が落ちる。酢酸（ＣＨ3 ＣＯＯＨ）を添加
すると鏡端面の粗さが減量できる。添加量１０００ｃｃ
以上で平均粗さＲａは０．１μｍで飽和し、１０ｃｃ以
下の添加でもやはり加工の平均粗さＲａは０．１μｍと
なる。また１０ｃｃ以下では面の平均粗さＲａが０．１
μｍ以上になる。The amount of HF compounded is 70 to 2 by weight.
If it is 0% and exceeds 70%, the etching surface becomes rough, and if it is less than 20%, the processing efficiency decreases. Addition of acetic acid (CH 3 COOH) can reduce the roughness of the mirror end surface. Addition amount 1000cc
With the above, the average roughness Ra is saturated at 0.1 μm, and even if 10 cc or less is added, the average roughness Ra of the processing is 0.1 μm. When the surface roughness is less than 10 cc, the average surface roughness Ra is 0.1.
More than μm.
【００１０】[0010]
オゾン量 ０．１（ｍ3 ／ｍｉｎ） 酢酸量 １００
（ｃｃ） 温度 ４０ （℃） の条件で実験を行った結果、ベベリング部分平均粗さＲ
ａが３．０μｍであった端面粗さが０．０５μｍとな
り、またレートは１０μｍ／ｍｉｎが達成出来た。Ozone amount 0.1 (m 3 / min) Acetic acid amount 100
(Cc) As a result of an experiment conducted under the condition of a temperature of 40 (° C.), the bevelling part average roughness R
When a was 3.0 μm, the end surface roughness was 0.05 μm, and the rate was 10 μm / min.
【００１１】また別の実施例としては オゾン量 ０．５（ｍ3 ／ｍｉｎ） 酢酸量 ５００
（ｃｃ） 温度 ３０ （℃） の条件で実験を行った結果、ベベリング部分平均粗さＲ
ａが３．０μｍであった端面粗さが０．１μｍとなり、
レートは５μｍ／ｍｉｎが達成出来た。In another embodiment, the amount of ozone is 0.5 (m 3 / min) and the amount of acetic acid is 500.
(Cc) As a result of conducting an experiment under the condition of a temperature of 30 (° C.), the bevelling part average roughness R
When a was 3.0 μm, the end surface roughness was 0.1 μm,
A rate of 5 μm / min was achieved.
【００１２】さらに別の実施例としては オゾン量 １．０（ｍ3 ／ｍｉｎ） 酢酸量 １０００
（ｃｃ） 温度 ２０ （℃） の条件で実験を行った結果、ベベリング部分平均粗さＲ
ａが３．０μｍであった端面粗さが０．０１μｍとな
り、レートは１．０μｍ／ｍｉｎが達成出来た。As another embodiment, the amount of ozone is 1.0 (m 3 / min) and the amount of acetic acid is 1000.
(Cc) As a result of an experiment conducted under the condition of a temperature of 20 (° C.), the average roughness R of the beveling portion is R.
When a was 3.0 μm, the end surface roughness was 0.01 μm, and the rate was 1.0 μm / min.
【００１３】[0013]
【発明の効果】本発明によれば、硝酸（Ｈ2 ＮＯ3 ）を
使用してのエッチングに際して生じる如きエッチングム
ラがなくなり、Ｓｉウエハーのベベリング部分の鏡面化
収率が向上する。EFFECTS OF THE INVENTION According to the present invention, etching unevenness such as that which occurs during etching using nitric acid (H 2 NO 3 ) is eliminated, and the mirroring yield of the beveled portion of the Si wafer is improved.
【図１】本発明の装置の説明図である。FIG. 1 is an explanatory diagram of a device of the present invention.
【図２】従来装置の説明図である。FIG. 2 is an explanatory diagram of a conventional device.
１ オゾン発生装置 ２ オゾン（Ｏ3 ） ３ フッ酸（ＨＦ）＋酢酸（ＣＨ3 ＣＯＯＨ） ４ テフロン発泡体 ５ シリコンウエハー ６ 圧着装置 ７ シリコンウエハーの端面 ８ 硝酸（Ｈ2 ＮＯ3 ） ９ シリコンウエハーの隙間 １０ タンク1 ozone generator 2 ozone (O 3 ) 3 hydrofluoric acid (HF) + acetic acid (CH 3 COOH) 4 Teflon foam 5 silicon wafer 6 crimping device 7 end face of silicon wafer 8 nitric acid (H 2 NO 3 ) 9 silicon wafer Gap 10 tank
Claims (2)
にあたり、オゾンにより酸化し、フッ酸（ＨＦ）と酢酸
（ＣＨ3 ＣＯＯＨ）によりエッチングして鏡面化するこ
とを特徴とするＳｉウエハーのベベリング部分の鏡面化
方法。1. A mirrored surface of a beveled portion of a Si wafer is oxidized by ozone and etched by hydrofluoric acid (HF) and acetic acid (CH 3 COOH) to be mirrored. Mirror finish method.
装置において、タンク１０内にオゾン発生装置１、４を
設け、タンク内溶液がフッ酸（ＨＦ）と酢酸（ＣＨ3 Ｃ
ＯＯＨ）の混合溶液３であることを特徴とするＳｉウエ
ハーのベベリング部分の鏡面化装置。2. A mirroring device for a beveling portion of a Si wafer, wherein ozone generators 1 and 4 are provided in a tank 10 and the solution in the tank is hydrofluoric acid (HF) and acetic acid (CH 3 C).
OOH) mixed solution 3 is a mirroring device for the beveling portion of a Si wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4581892A JPH05243195A (en) | 1992-03-03 | 1992-03-03 | Method of making beveled part of si wafer mirror surface and device thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4581892A JPH05243195A (en) | 1992-03-03 | 1992-03-03 | Method of making beveled part of si wafer mirror surface and device thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05243195A true JPH05243195A (en) | 1993-09-21 |
Family
ID=12729832
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4581892A Withdrawn JPH05243195A (en) | 1992-03-03 | 1992-03-03 | Method of making beveled part of si wafer mirror surface and device thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05243195A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0731498A2 (en) * | 1995-03-10 | 1996-09-11 | Kabushiki Kaisha Toshiba | Surface processing method and surface processing device for silicone substrates |
| US5759971A (en) * | 1994-07-29 | 1998-06-02 | Sumitomo Sitix Corporation | Semiconductor wafer cleaning liquid |
-
1992
- 1992-03-03 JP JP4581892A patent/JPH05243195A/en not_active Withdrawn
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5759971A (en) * | 1994-07-29 | 1998-06-02 | Sumitomo Sitix Corporation | Semiconductor wafer cleaning liquid |
| EP0731498A2 (en) * | 1995-03-10 | 1996-09-11 | Kabushiki Kaisha Toshiba | Surface processing method and surface processing device for silicone substrates |
| EP0731498A3 (en) * | 1995-03-10 | 1996-11-13 | Toshiba Kk | Surface processing method and surface processing device for silicone substrates |
| US5868855A (en) * | 1995-03-10 | 1999-02-09 | Kabushki Kaisha Toshiba | Surface processing method and surface processing device for silicon substrates |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 19990518 |