JPH05235189A - Manufacture of semiconductor and device thereof - Google Patents

Manufacture of semiconductor and device thereof

Info

Publication number
JPH05235189A
JPH05235189A JP4072837A JP7283792A JPH05235189A JP H05235189 A JPH05235189 A JP H05235189A JP 4072837 A JP4072837 A JP 4072837A JP 7283792 A JP7283792 A JP 7283792A JP H05235189 A JPH05235189 A JP H05235189A
Authority
JP
Japan
Prior art keywords
resin
sealing
cap
lead frame
pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4072837A
Other languages
Japanese (ja)
Other versions
JP2814827B2 (en
Inventor
Tomoaki Hirokawa
友明 廣川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP4072837A priority Critical patent/JP2814827B2/en
Publication of JPH05235189A publication Critical patent/JPH05235189A/en
Application granted granted Critical
Publication of JP2814827B2 publication Critical patent/JP2814827B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PURPOSE:To prevent the generation of a defective sealing, such as perforating in a resin, at the time of resin sealing by a method wherein a sealing work using the resin is conducted under a reduced pressure and after the sealing, the quantity of gas, which is sealed in a cap, is lessened. CONSTITUTION:The interior of a vacuum chamber 3 is decompressed to the pressure of several (m) to several tens (m) Torr. There are a first heat block 4 and a second heat block 5 in the chamber 5 and a sealing work is conducted like a conventional technique. As the sealing work is conducted under a reduced pressure like this, a difference between the pressures in the interior and the outside of a cap is hardly generated because the quantity of gas, which is sealed in the cap, is little. Accordingly, even if a resin is stood to cool from a high- temperature state when it is in the state of a liquid, there is no passage of gas on the sealing surface of the cap and perforating is not generated in the resin. As the resin is solidified in several minutes before the atmosphere in the chamber 3 is returned to the atmospheric pressure, the time for standing to cool the resin is not necessarily provided specially and the sealing work can be conducted time wise efficiently.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、半導体製造装置及び半
導体装置の製造方法に関し、特に樹脂を用いて封止を行
う半導体製造装置及び半導体装置の製造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus and a method of manufacturing a semiconductor device, and more particularly to a semiconductor manufacturing apparatus and a method of manufacturing a semiconductor device which are sealed with a resin.

【0002】[0002]

【従来の技術】従来、リードフレームにマウント,ボン
ディングされた半導体ペレットをキャップを用いて封着
する場合、キャップに予め封止用樹脂を付着させたもの
を用いて行っていた。
2. Description of the Related Art Conventionally, when a semiconductor pellet mounted and bonded to a lead frame is sealed with a cap, a cap to which a sealing resin is previously attached has been used.

【0003】従来の封着の工程を図3及び図4を用いて
説明する。半導体ペレット12は、リードフレーム2に
つらなって形成されたペレットマウント部16にマウン
トされ、ボンディングワイヤー13で電気的に接続され
ている。
A conventional sealing process will be described with reference to FIGS. 3 and 4. The semiconductor pellet 12 is mounted on a pellet mount portion 16 formed along the lead frame 2 and electrically connected by a bonding wire 13.

【0004】窒素(または空気)雰囲気中で300℃程
度に加熱された第1ヒートブロック4上にリードフレー
ム2が送られ、順次封着すべき部分を加熱する。充分に
加熱された状態になってからキャップ14が置かれ、圧
力が加えられる。
The lead frame 2 is sent onto the first heat block 4 heated to about 300 ° C. in a nitrogen (or air) atmosphere, and the portions to be sealed are heated sequentially. Once fully heated, the cap 14 is placed and pressure is applied.

【0005】このときキャップ14に付着していた樹脂
15が熱により液化し、リードフレーム12とキャップ
14が接着され、高温の気体がキャップ14内に封止さ
れる。
At this time, the resin 15 attached to the cap 14 is liquefied by heat, the lead frame 12 and the cap 14 are adhered, and the high temperature gas is sealed in the cap 14.

【0006】次に窒素(または空気)雰囲気中で300
℃程度に加熱された第2ヒートブロック5の上にリード
フレーム2が送られ、順次樹脂15を高温に保つ。樹脂
15は高温に保たれることによって高分子化が起こり、
数秒〜十数秒で再固化し、キャップ14を完全に固着さ
せる。
Next, in a nitrogen (or air) atmosphere, 300
The lead frame 2 is sent onto the second heat block 5 heated to about 0 ° C., and the resin 15 is sequentially kept at a high temperature. The resin 15 is polymerized by being kept at a high temperature,
It is solidified again in a few seconds to a dozen seconds and the cap 14 is completely fixed.

【0007】その後リードフレーム2をリードフレーム
送り用レール17に送り、室温まで放冷する。このと
き、キャップ14内に閉じ込められた高温の気体は室温
に冷却されるので圧縮し、外部との気圧差を生じる。
After that, the lead frame 2 is sent to the lead frame feed rail 17 and allowed to cool to room temperature. At this time, the high-temperature gas trapped in the cap 14 is cooled to room temperature and is therefore compressed, resulting in a pressure difference from the outside.

【0008】[0008]

【発明が解決しようとする課題】正常に封着が行われて
いれば、樹脂15は完全に固化しているので問題とはな
らない。しかしながら実際には、樹脂の液化時間あるい
は再固化時間は必ずしも一定とはならず、樹脂の質,
量,付着状態などのバラツキや、それに応じてあるいは
他の要因で封着条件を変えたりするために大きく変動し
てしまう。
If the sealing is carried out normally, the resin 15 is completely solidified and no problem occurs. However, in reality, the liquefaction time or re-solidification time of the resin is not always constant, and the quality of the resin,
Variations such as amount and adhesion state, and corresponding changes or other factors change sealing conditions, resulting in large fluctuations.

【0009】そのため、樹脂が再固化した後に圧力が加
わったり、または液体状態のままで固化しないうちに圧
力が解除され放冷されたりすることがあり、付着の不良
が生じ、半導体素子不良となる問題があった。
Therefore, pressure may be applied after the resin is solidified again, or the pressure may be released and allowed to cool before it is solidified in a liquid state, resulting in defective adhesion and defective semiconductor devices. There was a problem.

【0010】つまり、樹脂15が完全に固化しない状態
で冷却すると、キャップ14内外の気体の圧力差によっ
てキャップの封止面での気体の通過が生じ、樹脂に穴明
きが生じてしまう。
That is, if the resin 15 is cooled in a state where it is not completely solidified, the gas will pass through the sealing surface of the cap 14 due to the pressure difference between the gas inside and outside the cap 14, and the resin will be perforated.

【0011】ところが、樹脂の穴明きが生じないように
キャップ14への圧力の印加時間を長くすると、樹脂が
破壊され封着強度が低下してしまうという問題が生じ
る。また実際生産する上で印加時間が増加すると生産性
が悪くなってしまうので、限られた圧力印加時間で樹脂
穴明きを防ぐ必要がある。
However, if the pressure is applied to the cap 14 for a long time so that the resin is not punctured, the resin is broken and the sealing strength is lowered. Further, when the application time is increased in actual production, the productivity is deteriorated, so it is necessary to prevent resin drilling with a limited pressure application time.

【0012】本発明の目的は、樹脂封着の際の樹脂穴明
きなどの封着不良をなくす半導体製造方法及びその装置
を提供することにある。
It is an object of the present invention to provide a semiconductor manufacturing method and an apparatus therefor, which eliminates a sealing failure such as resin hole punching at the time of resin sealing.

【0013】[0013]

【課題を解決するための手段】前記目的を達成するた
め、本発明に係る半導体製造方法は、リードフレームに
マウント,ボンディングされた半導体素子を樹脂を用い
て封止する半導体装置の製造方法であって、前記リード
フレームの周辺雰囲気を減圧する工程と、前記半導体素
子を封止するための樹脂を液化する工程と、減圧しつつ
前記樹脂を固化する工程とを含むものである。
In order to achieve the above object, a semiconductor manufacturing method according to the present invention is a method of manufacturing a semiconductor device in which a semiconductor element mounted and bonded to a lead frame is sealed with a resin. Then, a step of reducing the pressure of the atmosphere around the lead frame, a step of liquefying the resin for sealing the semiconductor element, and a step of solidifying the resin while reducing the pressure are included.

【0014】また、本発明に係る半導体製造装置は、樹
脂を用いて半導体素子を封止する半導体製造装置であっ
て、半導体素子の封止雰囲気を減圧する減圧室を有し、
該減圧室は、前記樹脂を液化する手段と、前記樹脂を固
化する手段とを含むものである。
A semiconductor manufacturing apparatus according to the present invention is a semiconductor manufacturing apparatus for sealing a semiconductor element with a resin, and has a decompression chamber for decompressing a sealing atmosphere of the semiconductor element,
The decompression chamber includes means for liquefying the resin and means for solidifying the resin.

【0015】[0015]

【作用】樹脂を用いた封着の作業を減圧下で行う。これ
により、封着後キャップ内に封止される気体の量を少な
くする。
[Function] The sealing operation using the resin is performed under reduced pressure. This reduces the amount of gas sealed in the cap after sealing.

【0016】[0016]

【実施例】次に本発明について図面を参照して説明す
る。図1は、本発明の一実施例に係る半導体製造装置の
封着作業部分を示す上面図である。
The present invention will be described below with reference to the drawings. FIG. 1 is a top view showing a sealing work portion of a semiconductor manufacturing apparatus according to an embodiment of the present invention.

【0017】図1において、半導体ペレット12がマウ
ント,ボンディングされたリードフレーム2が送り側の
リードフレーム用マガジン1から封着作業用減圧室3へ
送られる。
In FIG. 1, a lead frame 2 on which a semiconductor pellet 12 is mounted and bonded is sent from a lead frame magazine 1 on the sending side to a decompression chamber 3 for sealing work.

【0018】減圧室3内は数mTorr〜数十mTor
rに減圧される。減圧室3には第1ヒートブロック4及
び第2ヒートブロック5があり、従来技術と同様に封着
作業が行われる。まず、300℃程度に加熱された第1
のヒートブロック4上にリードフレーム2が送られ、順
次封着すべき部分を加熱する。充分に加熱された状態に
なつてからキャップ14が置かれ、圧力が加えられる。
このときキャップ14に付着していた樹脂15が熱によ
り液化し、リードフレーム12とキャップ14が接着さ
れる。
Inside the decompression chamber 3 is several mTorr to several tens mTorr.
The pressure is reduced to r. The decompression chamber 3 has a first heat block 4 and a second heat block 5, and the sealing work is performed as in the conventional technique. First, the first heated to about 300 ℃
The lead frame 2 is sent onto the heat block 4 and sequentially heats the portions to be sealed. Once fully heated, the cap 14 is placed and pressure is applied.
At this time, the resin 15 attached to the cap 14 is liquefied by heat, and the lead frame 12 and the cap 14 are bonded.

【0019】次に、300℃程度に加熱された第2ヒー
トブロック5上にリードフレーム2が送られ、順次樹脂
15を高温に保ち高分子化させて再固化し、キャップ1
4を完全に固着させる。
Next, the lead frame 2 is sent onto the second heat block 5 heated to about 300 ° C., and the resin 15 is sequentially kept at a high temperature to polymerize and re-solidify, and the cap 1
Fix 4 completely.

【0020】その後リードフレーム2を室温まで放冷す
る。リードフレーム2上のすべての半導体ペレットが封
止されたら減圧室3内に窒素や空気を導入して大気圧に
戻し、リードフレーム2を受け側のリードフレーム用マ
ガジン18へ送る。
After that, the lead frame 2 is allowed to cool to room temperature. After all the semiconductor pellets on the lead frame 2 are sealed, nitrogen or air is introduced into the decompression chamber 3 to return to atmospheric pressure, and the lead frame 2 is sent to the lead frame magazine 18 on the receiving side.

【0021】封着作業を減圧下で行ったので、キャップ
14内に封止される気体の量が少なく、したがって放冷
したときに圧縮される気体の量が少ないので、キャップ
内外の圧力差がほとんど発生しない。よって樹脂15が
液体状態のときに高温状態から放冷されても、封止面で
の気体の通過はなく樹脂に穴明きは生じない。
Since the sealing operation is performed under reduced pressure, the amount of gas sealed in the cap 14 is small, and therefore the amount of gas compressed when left to cool is small, so that the pressure difference between the inside and outside of the cap is small. It rarely happens. Therefore, even if the resin 15 is allowed to cool from the high temperature state when it is in a liquid state, no gas passes through the sealing surface and no holes are formed in the resin.

【0022】減圧室3の雰囲気が大気圧に戻るまでの数
分間に樹脂は固化されるので、特に放冷時間を設けなく
ともよく、時間的に効率よく封着作業ができる。
Since the resin is solidified within a few minutes until the atmosphere in the decompression chamber 3 returns to the atmospheric pressure, it is not necessary to provide a cooling time, and the sealing work can be performed efficiently in time.

【0023】次に、本発明の他の実施例に係る半導体製
造装置の封着作業部分を図2に示して説明する。本実施
例では、量産性及び封着確度の向上のためマガジン輸送
用及びリードフレーム輸送用にそれぞれロードロック室
を設け、また第3ヒートブロックを追加している。
Next, a sealing work portion of a semiconductor manufacturing apparatus according to another embodiment of the present invention will be described with reference to FIG. In this embodiment, load lock chambers are provided for magazine transportation and lead frame transportation, respectively, and a third heat block is added to improve mass productivity and sealing accuracy.

【0024】大気圧にしたマガジン送り用ロードロック
室6にリードフレーム2を入れたリードフレーム用マガ
ジン1を置く。マガジン送り用ロードロック室6を数m
Torr〜数十mTorrに減圧する。マガジン送り用
ロードロック室7はマガジン送り用ロードロック室6と
同じように常圧から減圧しても良いが、常時数mTor
r〜数十mTorrに保っておけば減圧時間を省略でき
る。
The lead frame magazine 1 containing the lead frame 2 is placed in the magazine feed load lock chamber 6 at atmospheric pressure. Several meters of load lock chamber 6 for magazine feed
The pressure is reduced to Torr to several tens of mTorr. The magazine feed load lock chamber 7 may be decompressed from normal pressure in the same manner as the magazine feed load lock chamber 6, but it is always several mTorr.
If it is kept at r to several tens of mTorr, the decompression time can be omitted.

【0025】減圧状態でリードフレーム用マガジン1を
マガジン輸送用レール10によりリードフレーム用ロー
ドロック室7に輸送し、リードフレーム2を封着作業用
減圧室3に輸送できる状態にする。
In the depressurized state, the lead frame magazine 1 is transported to the lead frame load lock chamber 7 by the magazine transport rail 10, and the lead frame 2 is transported to the sealing depressurizing chamber 3.

【0026】一方、空になったマガジン送り用ロードロ
ック室6は次のマガジンを設置する準備のために大気圧
に戻す。封着作業は第1の実施例と同様に行う。第3ヒ
ートブロック11は第2ヒートブロック5での圧着〜固
化が充分でないときに追加して圧着〜固化ができるよう
にしたもので、樹脂の特性に応じて温度と加圧加重を変
えるよう制御できる。
On the other hand, the empty magazine feed load lock chamber 6 is returned to atmospheric pressure in preparation for the installation of the next magazine. The sealing work is performed in the same manner as in the first embodiment. The third heat block 11 is additionally provided so that pressure-solidification in the second heat block 5 can be performed when pressure-solidification is not sufficient, and control is performed so that temperature and pressure load are changed according to the characteristics of the resin. it can.

【0027】第3ヒートブロック11での作業が終了し
たら放冷し、リードフレーム2を室温に戻す。予め減圧
されたリードフレーム受け用ロードロック室8には空の
リードフレーム用マガジン18が準備されており、封止
が完了したリードフレーム2を受け取る。マガジン受け
用ロードロック室9が減圧状態であればリードフレーム
用マガジン1をマガジン輸送用レール10により輸送し
て、その後マガジン受け用ロードロツク室9を常圧に戻
して一連の封止作業は完了する。
After the work in the third heat block 11 is completed, the system is left to cool and the lead frame 2 is returned to room temperature. An empty lead frame magazine 18 is prepared in the lead frame receiving load lock chamber 8 that has been decompressed in advance, and receives the sealed lead frame 2. If the magazine receiving load lock chamber 9 is in a depressurized state, the lead frame magazine 1 is transported by the magazine transport rail 10, and then the magazine receiving load lock chamber 9 is returned to normal pressure to complete a series of sealing operations. ..

【0028】本実施例では、マガジン輸送用及びリード
フレーム輸送用にそれぞれロードロック室を設け、封止
作業減圧室内での作業とは全く関係なくリードフレーム
の準備及び取出しが出きるので、第1の実施例に比べ減
圧時間及び大気開放時間が大幅に省略でき、量産性が格
段に向上した。また、第3ヒートブロックによって樹脂
特性に応じて追加圧着〜固化ができるので、封着確度が
向上し、不良率が少なくなった。
In the present embodiment, load lock chambers are provided for transporting magazines and lead frames, respectively, and the lead frame can be prepared and taken out regardless of the work in the decompression chamber for sealing work. Compared with the example, the depressurization time and the atmosphere opening time can be largely omitted, and the mass productivity is remarkably improved. Further, since the third heat block enables additional pressure bonding to solidification depending on the resin characteristics, the sealing accuracy is improved and the defective rate is reduced.

【0029】[0029]

【発明の効果】以上説明したように、本発明では特に封
止材料として樹脂を用いた場合、封着の作業を減圧下で
行うことができるので、封着後キャップ内に封止される
気体の量が少ない。したがって封止時の温度履歴により
生じるキャップ内外の圧力差の発生を防ぐことが出きる
ために、樹脂が液体状態であっても封止面における気体
の通過はなく、樹脂の穴明きは全く生じない。
As described above, in the present invention, particularly when a resin is used as the sealing material, the sealing work can be performed under reduced pressure, so that the gas sealed in the cap after the sealing is performed. Is small. Therefore, since it is possible to prevent the pressure difference between the inside and the outside of the cap caused by the temperature history at the time of sealing, even if the resin is in a liquid state, gas does not pass through the sealing surface, and there is no perforation of the resin. Does not happen.

【0030】また、樹脂は周囲の雰囲気が大気圧に戻る
までに固化されればよく、樹脂の固化時間より大気圧に
戻る時間が長ければ特に樹脂固化時間を設ける必要がな
いので、効率よく封着作業ができる。更に、リードフレ
ーム送り用あるいは受け用ロードロック室は封止作業減
圧室内での作業とは無関係に減圧あるいは大気開放でき
るので減圧時間及び大気開放時間を短縮できる。
Further, the resin may be solidified by the time the ambient atmosphere returns to atmospheric pressure, and if the time required to return to atmospheric pressure is longer than the solidification time of the resin, it is not necessary to set the resin solidification time, so that the resin is efficiently sealed. You can wear it. Further, since the lead frame feeding or receiving load lock chamber can be depressurized or opened to the atmosphere regardless of the work in the sealing work depressurizing chamber, the depressurizing time and the atmospheric opening time can be shortened.

【0031】また、特に送り側において常時減圧状態を
保つことによって、塵などの混入を防ぎ高い清浄度を保
つことができるために、半導体装置の封止不良や半導体
ペレットへの塵の付着による特性不良などは全くない優
れた効果がある。
Further, especially by always keeping the depressurized state on the feed side, it is possible to prevent dust and the like from being mixed and to maintain high cleanliness. Therefore, characteristics due to defective sealing of the semiconductor device or adhesion of dust to the semiconductor pellets It has an excellent effect with no defects.

【0032】本発明は樹脂を付着したキャップを用いて
半導体ペレットを封止する例を揚げて説明したが、金型
内に樹脂を充填して封止する樹脂モールド技術にも応用
できるものである。
The present invention has been described with reference to an example in which a semiconductor pellet is sealed using a cap to which a resin is attached, but it can also be applied to a resin molding technique in which a resin is filled in a mold and sealed. ..

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例に係る半導体製造装置を示す
上面図である。
FIG. 1 is a top view showing a semiconductor manufacturing apparatus according to an embodiment of the present invention.

【図2】本発明の他の実施例に係る半導体製造装置を示
す上面図である。
FIG. 2 is a top view showing a semiconductor manufacturing apparatus according to another embodiment of the present invention.

【図3】従来の封着工程を示す縦断面図である。FIG. 3 is a vertical sectional view showing a conventional sealing step.

【図4】従来の半導体製造装置を示す上面図である。FIG. 4 is a top view showing a conventional semiconductor manufacturing apparatus.

【符号の説明】[Explanation of symbols]

1,18 リードフレーム用マガジン 2 リードフレーム 3 封着作業用減圧室 4 第1ヒートブロック 5 第2ヒートブロック 6 マガジン送り用ロードロック室 7 リードフレーム送り用ロードロック室 8 リードフレーム受け用ロードロック室 9 マガジン受け用ロードロック室 10 マガジン輸送用レール 11 第3ヒートブロック 12 半導体ペレット 13 ボンディングワイヤー 14 キャップ 15 樹脂 16 ペレットマウント部 17 リードフレーム送り用レール 1,18 Lead frame magazine 2 Lead frame 3 Decompression chamber for sealing work 4 First heat block 5 Second heat block 6 Magazine feed load lock chamber 7 Lead frame feed load lock chamber 8 Lead frame receiving load lock chamber 9 Magazine load lock chamber 10 Magazine transport rail 11 Third heat block 12 Semiconductor pellet 13 Bonding wire 14 Cap 15 Resin 16 Pellet mount 17 Lead frame feed rail

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 リードフレームにマウント,ボンディン
グされた半導体素子を樹脂を用いて封止する半導体装置
の製造方法において、 前記リードフレームの周辺雰囲気を減圧する工程と、 前記半導体素子を封止するための樹脂を液化する工程
と、 減圧しつつ前記樹脂を固化する工程とを含むことを特徴
とする半導体装置の製造方法。
1. A method of manufacturing a semiconductor device in which a semiconductor element mounted and bonded to a lead frame is sealed with a resin, wherein a step of reducing an atmosphere around the lead frame, and a step of sealing the semiconductor element And a step of solidifying the resin while decompressing the resin, the method of manufacturing a semiconductor device.
【請求項2】 樹脂を用いて半導体素子を封止する半導
体製造装置において、 半導体素子の封止雰囲気を減圧する減圧室を有し、 該減圧室は、前記樹脂を液化する手段と、前記樹脂を固
化する手段とを含むことを特徴とする半導体製造装置。
2. A semiconductor manufacturing apparatus for encapsulating a semiconductor element with a resin, comprising a decompression chamber for decompressing a sealing atmosphere of the semiconductor element, the decompression chamber comprising means for liquefying the resin and the resin. And a means for solidifying the semiconductor.
JP4072837A 1992-02-24 1992-02-24 Semiconductor device manufacturing method and device Expired - Fee Related JP2814827B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4072837A JP2814827B2 (en) 1992-02-24 1992-02-24 Semiconductor device manufacturing method and device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4072837A JP2814827B2 (en) 1992-02-24 1992-02-24 Semiconductor device manufacturing method and device

Publications (2)

Publication Number Publication Date
JPH05235189A true JPH05235189A (en) 1993-09-10
JP2814827B2 JP2814827B2 (en) 1998-10-27

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Country Link
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000015593A (en) * 1998-08-31 2000-03-15 김규현 Curing method of liquid phase sealing material for semiconductor package

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5320860A (en) * 1976-08-11 1978-02-25 Hitachi Ltd Hermetic sealing method of electronic parts
JPH0391254A (en) * 1989-09-04 1991-04-16 Hitachi Ltd Junction device
JPH0448755A (en) * 1990-06-15 1992-02-18 Nec Corp Manufacture of package type semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5320860A (en) * 1976-08-11 1978-02-25 Hitachi Ltd Hermetic sealing method of electronic parts
JPH0391254A (en) * 1989-09-04 1991-04-16 Hitachi Ltd Junction device
JPH0448755A (en) * 1990-06-15 1992-02-18 Nec Corp Manufacture of package type semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000015593A (en) * 1998-08-31 2000-03-15 김규현 Curing method of liquid phase sealing material for semiconductor package

Also Published As

Publication number Publication date
JP2814827B2 (en) 1998-10-27

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