JPH05234433A - Manufacture of conductive film - Google Patents

Manufacture of conductive film

Info

Publication number
JPH05234433A
JPH05234433A JP34806591A JP34806591A JPH05234433A JP H05234433 A JPH05234433 A JP H05234433A JP 34806591 A JP34806591 A JP 34806591A JP 34806591 A JP34806591 A JP 34806591A JP H05234433 A JPH05234433 A JP H05234433A
Authority
JP
Japan
Prior art keywords
conductive film
compound
rhenium
compounds
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP34806591A
Other languages
Japanese (ja)
Inventor
Keisuke Abe
啓介 阿部
Takeshi Morimoto
剛 森本
Kazuya Hiratsuka
和也 平塚
Keiko Kubota
恵子 久保田
Satoshi Takemiya
聡 竹宮
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AGC Inc
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Priority to JP34806591A priority Critical patent/JPH05234433A/en
Publication of JPH05234433A publication Critical patent/JPH05234433A/en
Withdrawn legal-status Critical Current

Links

Abstract

PURPOSE:To obtain a high characteristic conductive film to which low- temperature thermal treatment is applicable, by applying an application liquid including a rhenium compound and other metal compounds to a base body and then subjecting to heating. CONSTITUTION:An application liquid including a rhenium compound and other metal compounds is applied to a base body and then heated to make a condutive film containing rhenium oxide. As a metal compound except for the rhenium compound, at least one kind selected from Si compounds, Zr compounds Ti compounds and Al compounds which make respectively SiO2, ZrO2, TiO2 and Al2O3 by heating, can be listed.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明はブラウン管パネル等のガ
ラス基体表面に塗布される導電膜に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a conductive film applied on the surface of a glass substrate such as a cathode ray tube panel.

【0002】[0002]

【従来の技術】ブラウン管は高電圧で作動するため、起
動時或いは終了時に該表面に静電気が誘発される。この
静電気により該表面にほこりが付着しコントラスト低下
を引き起こしたり、或いは直接触れた際軽い電気ショッ
クによる不快感を生ずることが多い。
2. Description of the Related Art Since a cathode ray tube operates at a high voltage, static electricity is induced on its surface at the time of starting or ending. This static electricity often causes dust to adhere to the surface to cause a reduction in contrast, or causes discomfort due to a slight electric shock when directly touched.

【0003】従来、上述の事柄を防止するためにブラウ
ン管パネル表面に帯電防止膜を付与する試みがかなりな
されてきた。例えば特開昭63−76247号記載の通
り、ブラウン管パネル表面を350℃程度に加熱しCV
D法により酸化スズ及び酸化インジウム等の導電性酸化
物層を設ける方法が採用されてきた。しかしながらこの
方法では装置コストがかかることに加え、ブラウン管を
高温加熱するためブラウン管内の蛍光体の脱落を生じた
り、寸法精度が低下する等の問題があった。また、導電
層に用いる材料としては酸化スズが最も一般的である
が、この場合低温処理では高性能膜が得にくい欠点があ
った。
In the past, many attempts have been made to provide an antistatic film on the surface of a cathode ray tube panel in order to prevent the above-mentioned problems. For example, as described in JP-A-63-76247, the surface of the cathode ray tube panel is heated to about 350 ° C. to perform CV.
A method of providing a conductive oxide layer such as tin oxide and indium oxide by the D method has been adopted. However, in this method, there is a problem in that in addition to the cost of the apparatus, since the CRT is heated to a high temperature, the fluorescent substance in the CRT falls off and the dimensional accuracy decreases. Further, tin oxide is the most common material used for the conductive layer, but in this case, there is a drawback that it is difficult to obtain a high performance film by low temperature treatment.

【0004】また近年、電磁波ノイズによる電子機器へ
の電波障害が社会問題となり、それらを防止するため規
格の作成、規制が行われている。電磁波ノイズは人体に
ついて、CRT上の静電気チャージによる皮膚ガンの恐
れ、低周波電磁界(ELF)による胎児への影響、その
他X線、紫外線などによる害が各国で問題視されてい
る。この場合、導電性塗膜の存在により、導電性塗膜に
電磁波が当たると、塗膜中に渦電流を誘導して、この作
用で電磁波を反射する。しかしこのためには高い電界強
度に耐え得る金属並の電気特性の良導電性が必要である
が、それほどの良導電性の膜を得ることは更に困難であ
った。
In recent years, radio wave interference to electronic equipment due to electromagnetic noise has become a social problem, and standards have been created and regulated to prevent them. Electromagnetic noise is considered to be a problem in various countries in the human body, such as fear of skin cancer due to electrostatic charge on the CRT, influence on the fetus due to low-frequency electromagnetic field (ELF), and harm due to X-rays and ultraviolet rays. In this case, when an electromagnetic wave hits the conductive coating film due to the presence of the conductive coating film, an eddy current is induced in the coating film and the electromagnetic wave is reflected by this action. However, for this purpose, it is necessary to have good conductivity having electric characteristics comparable to those of metals capable of withstanding high electric field strength, but it has been more difficult to obtain a film having such good conductivity.

【0005】[0005]

【発明が解決しようとする課題】本発明は従来技術が有
していた前述の欠点を解消しようとするものであり、低
温熱処理が可能な高特性の導電膜を新規に提供すること
を目的とする。
SUMMARY OF THE INVENTION The present invention is intended to solve the above-mentioned drawbacks of the prior art, and an object thereof is to newly provide a high-performance conductive film which can be heat-treated at a low temperature. To do.

【0006】[0006]

【課題を解決するための手段】本発明は前述の問題点を
解決すべくなされたものであり、レニウム化合物と、そ
の他の金属化合物とを含む塗布液を基体上に塗布した
後、加熱することを特徴とする、酸化レニウムを含む導
電膜の製造方法を提供するものである。
SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, in which a coating solution containing a rhenium compound and another metal compound is applied on a substrate and then heated. And a method for manufacturing a conductive film containing rhenium oxide.

【0007】本発明において用いる塗布液は、必須成分
として、レニウム化合物を含むものである。かかるレニ
ウム化合物としては、塩化レニウム等のレニウム塩や、
オキシ四塩化レニウム等の酸塩化物、過レニウム酸ナト
リウム等の塩等が挙げられる。
The coating liquid used in the present invention contains a rhenium compound as an essential component. Examples of such rhenium compounds include rhenium salts such as rhenium chloride,
Examples thereof include acid chlorides such as rhenium oxytetrachloride and salts such as sodium perrhenate.

【0008】かかる塩化レニウム等のレニウム化合物は
水に溶解した後そのまま用いることもできるが、基体に
対する塗布性を増すために、有機溶媒に分散して用いる
ことも可能である。親水性有機溶媒としてはメタノー
ル、エタノール、プロパノール、ブタノール等のアルコ
ール類、エチルセロソルブ等のエーテル類が任意に使用
できる。
The rhenium compound such as rhenium chloride can be used as it is after being dissolved in water, but it can also be used by being dispersed in an organic solvent in order to improve the coating property to the substrate. As the hydrophilic organic solvent, alcohols such as methanol, ethanol, propanol and butanol, and ethers such as ethyl cellosolve can be arbitrarily used.

【0009】また本発明に於て用いるレニウム化合物を
含む塗布液は、レニウム化合物以外の金属化合物を含む
液である。かかる金属酸化物としては、加熱によりそれ
ぞれ、SiO2 ,ZrO2 ,TiO2 ,Al23 とな
るSi化合物、Zr化合物、Ti化合物、Al化合物の
うち少なくとも1種が挙げられる。具体的には、Si,
Zr,Ti,Alのアルコキシド、またはその加水分解
物、あるいは塩のうち少なくとも1種が挙げられる。
The coating liquid containing the rhenium compound used in the present invention is a liquid containing a metal compound other than the rhenium compound. Examples of such metal oxides include at least one of a Si compound, a Zr compound, a Ti compound, and an Al compound, which become SiO 2 , ZrO 2 , TiO 2 , and Al 2 O 3 by heating. Specifically, Si,
At least one of Zr, Ti, Al alkoxides, hydrolysates thereof, and salts is used.

【0010】なかでも、塗布液には、膜の付着強度及び
硬度を向上させるためのバインダーとしてSi(OR)
y ・R´4-y (y=3または4、R,R´はアルキル
基)等のSi化合物、またはその加水分解物を添加する
のが好ましい。その際加水分解の触媒としては、HC
l,HNO3 ,CH3 COOH,HCOOH等を添加す
ることができる。
Above all, the coating liquid contains Si (OR) as a binder for improving the adhesion strength and hardness of the film.
It is preferable to add a Si compound such as y · R ′ 4-y (y = 3 or 4, R and R ′ are alkyl groups), or a hydrolyzate thereof. At that time, HC is used as a hydrolysis catalyst.
1, HNO 3 , CH 3 COOH, HCOOH, etc. can be added.

【0011】Si化合物の添加割合としては、酸化物換
算で、酸化レニウムReO3 と酸化ケイ素の重量比が、
ReO3 :SiO2 =1:6〜5:1以下が好ましい。
ReO3 が少なすぎると導電膜の表面抵抗値が高くな
り、また、SiO2 が少なすぎると、導電膜と基体(特
にガラス基体の場合)の接着強度が弱くなる。従って、
十分な導電性および接着強度を発現しうる範囲として、
かかる重量比が好ましい。
The addition ratio of the Si compound is, in terms of oxide, the weight ratio of rhenium oxide ReO 3 and silicon oxide.
ReO 3 : SiO 2 = 1: 6 to 5: 1 or less is preferable.
If the amount of ReO 3 is too small, the surface resistance value of the conductive film will be high, and if the amount of SiO 2 is too small, the adhesive strength between the conductive film and the substrate (especially in the case of a glass substrate) will be weak. Therefore,
As a range capable of expressing sufficient conductivity and adhesive strength,
Such weight ratio is preferred.

【0012】また、上述のように、Ti化合物、Zr化
合物、Al化合物を塗布液に添加することにより、高屈
折率の導電膜を得ることができる。
Further, as described above, a conductive film having a high refractive index can be obtained by adding the Ti compound, the Zr compound and the Al compound to the coating liquid.

【0013】塗布液中の固形分含量は、0.05〜30
重量%であることが好ましく、さらに好ましくは0.3
〜10.0重量%である。固形分含量があまり小さい
と、塗布液の粘度が小さくなり、膜が薄くなるため膜の
均一性や十分な導電性が得られず、また、あまり大きい
と、塗布液の保存安定性が悪くなるため、かかる固形分
含量が好ましい。さらに基体との濡れ性を向上させるた
めに、塗布液に種々の界面活性剤を添加することもでき
る。
The solid content of the coating solution is 0.05 to 30.
It is preferably wt%, more preferably 0.3
~ 10.0% by weight. If the solid content is too small, the viscosity of the coating liquid will be small, and the film will be thin, so that the uniformity and sufficient conductivity of the film will not be obtained, and if it is too large, the storage stability of the coating liquid will be poor. Therefore, such solid content is preferable. Further, in order to improve the wettability with the substrate, various surfactants can be added to the coating liquid.

【0014】かかる塗布液の基体上への塗布方法として
は、従来から知られている方法、即ちスピンコート、デ
ィップコート、スプレーコート法等が好適に使用でき
る。また、スプレーコートして膜表面に凹凸を形成し防
眩効果も併せて付与してもよく、その場合、かかる凹凸
を有する導電膜の上にシリカ被膜等のハードコートを設
けてもよい。
As a method for applying the coating liquid onto the substrate, conventionally known methods, that is, spin coating, dip coating, spray coating and the like can be preferably used. Further, spray coating may be performed to form irregularities on the film surface to impart an antiglare effect together, and in that case, a hard coat such as a silica coating may be provided on the conductive film having the irregularities.

【0015】本発明の導電膜を形成する基体としてはブ
ラウン管パネル、複写機用ガラス板、計算機用パネル、
クリーンルーム用ガラス、CRT或いはLCD等の表示
装置の前面板等の各種ガラス、プラスチック基板などを
用いることができる。
As a substrate for forming the conductive film of the present invention, a cathode ray tube panel, a glass plate for a copying machine, a computer panel,
It is possible to use glass for a clean room, various kinds of glass such as a front plate of a display device such as a CRT or LCD, a plastic substrate and the like.

【0016】本発明における塗布液は直接基体上に塗布
する。低沸点の溶媒を用いた場合は、室温での乾燥によ
り均一な膜を得ることも可能であるが、高沸点溶媒を用
いた場合や、膜の強度を向上させるために、塗布した
後、加熱するのが好ましい。加熱温度の上限は基板に用
いられるガラス、プラスチック等の軟化点によって決定
される。この点も考慮すると好ましい温度範囲は100
〜500℃である。
The coating solution in the present invention is directly coated on the substrate. When a low boiling point solvent is used, it is possible to obtain a uniform film by drying at room temperature, but when a high boiling point solvent is used or in order to improve the strength of the film, it is heated after coating. Preferably. The upper limit of the heating temperature is determined by the softening point of glass, plastic, etc. used for the substrate. Considering this point, the preferable temperature range is 100
~ 500 ° C.

【0017】上述のように、Zr,Ti,Al等の化合
物を含む塗布液を使用することにより、高屈折率の導電
膜を形成し、その上に、MgF2 ,SiO2 等の低屈折
材料を含む液を適宜の光学膜厚となるようコートして、
多層干渉効果による低反射の導電膜とすることもでき
る。その際、導電膜形成用塗布液を塗布した後乾燥し、
ついで、かかる低屈折率膜形成用の液を塗布し、同時に
加熱することもできる。
As described above, a coating liquid containing a compound such as Zr, Ti or Al is used to form a conductive film having a high refractive index, and a low refractive material such as MgF 2 or SiO 2 is formed on the conductive film. Coated with a liquid containing a so as to have an appropriate optical film thickness,
It is also possible to use a conductive film having a low reflection due to the multilayer interference effect. At that time, after applying the coating liquid for forming a conductive film, it is dried,
Then, the liquid for forming the low refractive index film may be applied and heated at the same time.

【0018】[0018]

【実施例】以下に本発明の実施例を挙げ更に説明を行う
が、本発明はこれらに限定されるものではない。
The present invention will be further described below with reference to examples of the present invention, but the present invention is not limited thereto.

【0019】[実施例1]三塩化レニウムをエタノール
にReO3 換算で3重量%となるように調製した溶液
と、けい酸エチルを加水分解しエタノールにSiO2
算で3重量%となるように添加した溶液を、酸化物換算
(ReO3 ,SiO2 )で種々の比になるように混合し
た溶液を直径70mmのガラス板表面に種々の回転速度
で5秒間スピンコート法で塗布し、その後種々の温度で
加熱した。その結果形成された膜の表面抵抗値を表1に
示す。
Example 1 A solution prepared by adding rhenium trichloride to ethanol so as to be 3% by weight in terms of ReO 3 , and hydrolyzing ethyl silicate to make ethanol 3% by weight in terms of SiO 2. The added solution was mixed so as to have various ratios in terms of oxide (ReO 3 , SiO 2 ) on the surface of a glass plate having a diameter of 70 mm at various rotation speeds for 5 seconds by a spin coating method, and then variously applied. Heated at the temperature of. Table 1 shows the surface resistance value of the film formed as a result.

【0020】[0020]

【表1】 [Table 1]

【0021】[実施例2]実施例1と同様の三塩化レニ
ウム溶液、けい酸エチルの加水分解物含有液、さらに、
Ti(AcAc)2 (OC372 を含む液(ここ
で、AcAcはアセチルアセトン)、Al(C610
3 )(OC372 を含む液、ZrCl4を含む液を
種々の割合で混合して塗布液とし、直径70mmのガラ
ス板表面に回転速度750回/分で5秒間スピンコート
法で塗布し、380℃で10分間加熱し、各種の導電膜
を得た。各塗布液中の各成分の固形分濃度(重量%)、
および、得られた導電膜の表面抵抗値(Ω/□)を表2
に示す。
Example 2 The same rhenium trichloride solution as in Example 1, a hydrolyzate-containing solution of ethyl silicate, and
Liquid containing Ti (AcAc) 2 (OC 3 H 7 ) 2 (where AcAc is acetylacetone), Al (C 6 H 10 O
3 ) A solution containing (OC 3 H 7 ) 2 and a solution containing ZrCl 4 are mixed at various ratios to prepare a coating solution, which is applied to a glass plate surface having a diameter of 70 mm by a spin coating method at a rotation speed of 750 times / minute for 5 seconds. It was applied and heated at 380 ° C. for 10 minutes to obtain various conductive films. Solid content concentration (wt%) of each component in each coating solution,
Table 2 shows the surface resistance value (Ω / □) of the obtained conductive film.
Shown in.

【0022】[0022]

【表2】 [Table 2]

【0023】[実施例3]実施例2におけるレニウム化
合物をReCl4 とした以外は、実施例2と同様に行っ
た。結果を表3に示す。
Example 3 Example 3 was repeated except that the rhenium compound in Example 2 was changed to ReCl 4 . The results are shown in Table 3.

【0024】[0024]

【表3】 [Table 3]

【0025】[実施例4]酸化塩化レニウムをH2 Oに
溶解し、ReO3 換算で20重量%となるように調整し
た。更にこの液をエタノールで希釈し、3.0重量%の
固形分となるように調整した。Si(OEt )4 をエタ
ノールに固形分で3.0重量%となるように溶解させ、
酸化塩化レニウムの溶液とReO3 :SiO2 =1:1
〜2:1の割合で混合し、酸化塩化レニウム分解時に生
成するHClを触媒としてSi(OEt )4 を加水分解
させ塗布液とした。この液を750rpmで5秒間板ガ
ラスにスピンコートを行い、380℃で10分間加熱し
成膜を行った。各塗布液中の各成分の固形分重量比と得
られた導電膜の表面抵抗値(Ω/□)を表4に示す。
[Example 4] Rhenium oxide chloride was dissolved in H 2 O and adjusted to be 20% by weight in terms of ReO 3 . Further, this solution was diluted with ethanol and adjusted so that the solid content was 3.0% by weight. Si (OEt) 4 was dissolved in ethanol to a solid content of 3.0% by weight,
Rhenium oxide chloride solution and ReO 3 : SiO 2 = 1: 1
The mixture was mixed at a ratio of 2: 1 and the coating solution was prepared by hydrolyzing Si (OEt) 4 using HCl generated during decomposition of rhenium oxychloride as a catalyst. A plate glass was spin-coated with this solution at 750 rpm for 5 seconds and heated at 380 ° C. for 10 minutes to form a film. Table 4 shows the solid content weight ratio of each component in each coating solution and the surface resistance value (Ω / □) of the obtained conductive film.

【0026】[0026]

【表4】 [Table 4]

【0027】[比較例]平均1次粒径60ÅのSnO2
微粒子を純水中で、サンドミルで4時間粉砕した。この
液を90℃で1時間加熱解膠した後、けい酸エチルを加
水分解しエタノールにSiO2 換算で3重量%添加した
溶液を、酸化物換算で、SnO2 :SiO2 =2:1重
量比になるように混合し、直径70mmのガラス板表面
に750回/分の回転速度で5秒間スピンコート法で塗
布し、その後380℃で30分加熱した。得られた膜の
表面抵抗値は1×108 (Ω/□)であった。
[Comparative Example] SnO 2 having an average primary particle size of 60Å
The fine particles were ground in pure water for 4 hours with a sand mill. After this solution was deflocculated at 90 ° C. for 1 hour, a solution obtained by hydrolyzing ethyl silicate and adding 3% by weight of ethanol to SiO 2 in terms of SiO 2 was converted to SnO 2 : SiO 2 = 2: 1 by weight. The mixture was mixed in a ratio such that it was coated on the surface of a glass plate having a diameter of 70 mm by a spin coating method at a rotation speed of 750 rotations / minute for 5 seconds, and then heated at 380 ° C. for 30 minutes. The surface resistance value of the obtained film was 1 × 10 8 (Ω / □).

【0028】[0028]

【発明の効果】本発明によれば、スプレーまたはスピン
コートあるいは溶液中に基体を浸漬するなどの簡便な方
法により、効率よく、優れた導電膜を提供することが可
能となる。本発明は生産性に優れ、かつ真空を必要とし
ないので装置も比較的安価なものでよい。特にCRTの
パネルフェイス面等の大面積の基体にも充分適用でき、
量産も可能であるため工業的価値は非常に高い。
According to the present invention, an excellent conductive film can be efficiently provided by a simple method such as spraying, spin coating, or immersing a substrate in a solution. Since the present invention is excellent in productivity and does not require a vacuum, the device may be relatively inexpensive. Especially, it can be applied to large area substrates such as panel face of CRT.
Since it can be mass-produced, its industrial value is very high.

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 FI 技術表示箇所 H01J 29/88 9057−5E (72)発明者 久保田 恵子 神奈川県横浜市神奈川区羽沢町1150番地 旭硝子株式会社中央研究所内 (72)発明者 竹宮 聡 神奈川県横浜市神奈川区羽沢町1150番地 旭硝子株式会社中央研究所内─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification number Internal reference number for FI Technical indication H01J 29/88 9057-5E (72) Inventor Keiko Kubota 1150 Hazawa-cho, Kanagawa-ku, Yokohama, Kanagawa Asahi Glass (72) Inventor Satoshi Takemiya 1150 Hazawa-machi, Kanagawa-ku, Yokohama, Kanagawa Prefecture Asahi Glass Co., Ltd.

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】レニウム化合物と、その他の金属化合物と
を含む塗布液を基体上に塗布した後、加熱することを特
徴とする酸化レニウムを含む導電膜の製造方法。
1. A method for producing a conductive film containing rhenium oxide, which comprises applying a coating liquid containing a rhenium compound and another metal compound onto a substrate and then heating the coating liquid.
【請求項2】レニウム化合物以外の金属化合物が、加熱
により、それぞれ、SiO2 ,ZrO2 ,TiO2 ,A
23 となるSi化合物、Zr化合物、Ti化合物、
Al化合物のうち少なくとも1種であることを特徴とす
る請求項1の導電膜の製造方法。
2. A metal compound other than a rhenium compound is heated to produce SiO 2 , ZrO 2 , TiO 2 , and A, respectively.
a Si compound, a Zr compound, a Ti compound, which becomes l 2 O 3 ,
The method for producing a conductive film according to claim 1, wherein the conductive film is at least one of Al compounds.
【請求項3】レニウム化合物以外の金属化合物が、S
i,Zr,Ti,Alのアルコキシド、またはその加水
分解物、あるいは塩のうち少なくとも1種であることを
特徴とする請求項2の導電膜の製造方法。
3. A metal compound other than a rhenium compound is S
The method for producing a conductive film according to claim 2, wherein the conductive film is at least one selected from the group consisting of i, Zr, Ti, Al alkoxides, their hydrolysates, and salts.
【請求項4】請求項1〜3いずれか1項の製造方法によ
って得られた導電膜。
4. A conductive film obtained by the manufacturing method according to claim 1.
【請求項5】請求項1〜3いずれか1項の製造方法によ
ってガラス基体上に導電膜を形成したガラス物品。
5. A glass article having a conductive film formed on a glass substrate by the method according to claim 1.
【請求項6】請求項1〜3いずれか1項の製造方法によ
ってブラウン管表面に導電膜を形成したブラウン管。
6. A Braun tube having a conductive film formed on the surface of the Braun tube by the manufacturing method according to claim 1.
JP34806591A 1991-12-04 1991-12-04 Manufacture of conductive film Withdrawn JPH05234433A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP34806591A JPH05234433A (en) 1991-12-04 1991-12-04 Manufacture of conductive film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34806591A JPH05234433A (en) 1991-12-04 1991-12-04 Manufacture of conductive film

Publications (1)

Publication Number Publication Date
JPH05234433A true JPH05234433A (en) 1993-09-10

Family

ID=18394513

Family Applications (1)

Application Number Title Priority Date Filing Date
JP34806591A Withdrawn JPH05234433A (en) 1991-12-04 1991-12-04 Manufacture of conductive film

Country Status (1)

Country Link
JP (1) JPH05234433A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0722912A1 (en) * 1995-01-20 1996-07-24 Schott Glaswerke Glass screens for cathode ray tubes with controllable transmission characteristics, and method for producing them

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0722912A1 (en) * 1995-01-20 1996-07-24 Schott Glaswerke Glass screens for cathode ray tubes with controllable transmission characteristics, and method for producing them

Similar Documents

Publication Publication Date Title
JPH08211202A (en) Light-transmitting plate containing water-repellent and oil-repellent superfine particle and its production
EP0416119A1 (en) Formation of thin magnesium fluoride film and low-reflection film
JP3697760B2 (en) Coating liquid
JP3219450B2 (en) Method for producing conductive film, low reflection conductive film and method for producing the same
JPH05234433A (en) Manufacture of conductive film
JPH05166423A (en) Manufacture of conductive film and low reflective conductive film
JPH1167083A (en) Manufacture of cathode-ray tube
JPH05124838A (en) Electric conductive film and its production
JP3288417B2 (en) CRT panel having low reflection conductive film formed thereon and method of manufacturing the same
JPH05166424A (en) Manufacture of conductive film
JPH01286240A (en) Cathode-ray tube
JPH0534507A (en) Antistatic film and production thereof
JPH09249410A (en) Antistatic and antireflecting film
JPH05190089A (en) Dazzle preventing conductive film and its manufacture
JPH1036975A (en) Low resistance film or coating liquid for low refractive index film formation, and manufacture of low resistance film or low reflective and low refractive index film
JP2602514B2 (en) Cathode ray tube and manufacturing method thereof
JPH03167739A (en) Antistatic film
JPH07315881A (en) Formation of overcoat film
JPH0611602A (en) Low-refractive-index film, low-reflectance film, low-reflectance conductive film and low-reflectance glare-proof conductive film
JPH04167343A (en) Antistatic film for cathode-ray tube and manufacture of said film
JPH05151839A (en) Manufacture of electric conductive film and low-reflection conductive film
JPH0687632A (en) Low-reflection conductive film having antidazzle effect and its production
JPH04184839A (en) Anti-static film and its manufacture
JP2788295B2 (en) Method for producing antistatic film and cathode ray tube
JP3484903B2 (en) Coating liquid for forming low-resistance film, low-resistance film and method for manufacturing the same, and low-reflection low-resistance film and method for manufacturing the same

Legal Events

Date Code Title Description
A300 Withdrawal of application because of no request for examination

Free format text: JAPANESE INTERMEDIATE CODE: A300

Effective date: 19990311