JPH04167343A - Antistatic film for cathode-ray tube and manufacture of said film - Google Patents
Antistatic film for cathode-ray tube and manufacture of said filmInfo
- Publication number
- JPH04167343A JPH04167343A JP29066990A JP29066990A JPH04167343A JP H04167343 A JPH04167343 A JP H04167343A JP 29066990 A JP29066990 A JP 29066990A JP 29066990 A JP29066990 A JP 29066990A JP H04167343 A JPH04167343 A JP H04167343A
- Authority
- JP
- Japan
- Prior art keywords
- film
- titanium oxide
- ray tube
- antistatic film
- cathode ray
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 22
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000002245 particle Substances 0.000 claims abstract description 12
- 238000010438 heat treatment Methods 0.000 claims abstract description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 239000003960 organic solvent Substances 0.000 claims description 4
- 150000003377 silicon compounds Chemical class 0.000 claims description 4
- 229910021645 metal ion Inorganic materials 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 9
- 239000007788 liquid Substances 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 5
- 238000005507 spraying Methods 0.000 abstract description 5
- 238000009835 boiling Methods 0.000 abstract description 4
- 239000010936 titanium Substances 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 3
- 239000002904 solvent Substances 0.000 abstract description 3
- 230000004313 glare Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 abstract 7
- 238000004513 sizing Methods 0.000 abstract 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 1
- 239000002131 composite material Substances 0.000 abstract 1
- 239000012788 optical film Substances 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 13
- 239000000758 substrate Substances 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 8
- 229910003087 TiOx Inorganic materials 0.000 description 5
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- 150000004703 alkoxides Chemical class 0.000 description 2
- 238000009125 cardiac resynchronization therapy Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- -1 ethyl cellosolve Chemical compound 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000004576 sand Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- 238000001027 hydrothermal synthesis Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明はブラウン管パネル等の基体表面に塗布される帯
電防止膜に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an antistatic film applied to the surface of a substrate such as a cathode ray tube panel.
［従来の技術］
ブラウン管は高電圧で作動させる為、起動時或いは終了
時に該表面に静電気が誘起される。[Prior Art] Since cathode ray tubes are operated at high voltage, static electricity is induced on their surfaces when they are started up or shut down.
この静電気により該表面にほこりが付着し、コントラス
ト低下を引き起こしたり、或いは直接触れた際軽い電気
ショックによる不快感を生ずることが多い。This static electricity often causes dust to adhere to the surface, causing a decrease in contrast, or causing discomfort due to a mild electric shock when directly touched.
、従来、上述の事柄を防止するためにブラウン管パネル
表面に帯電防止膜を付与する試みはかなり成されてきた
。例えば特開昭６３−７６２４７号記載の通り、ブラウ
ン管パネル表面を３５０℃程度に加熱しＣＶＤ法により
酸化スズ及び酸化インジウム等の導電性酸化物層を設け
る方法が採用されていた。しかしながら、この方法にお
いては装置コストがかかることに加えブラウン管内の宙
光体の脱落を生じたり、寸法精度が低下する等の問題が
あった。In the past, many attempts have been made to apply an antistatic film to the surface of a cathode ray tube panel in order to prevent the above-mentioned problems. For example, as described in JP-A-63-76247, a method has been adopted in which the surface of a cathode ray tube panel is heated to about 350 DEG C. and a layer of conductive oxide such as tin oxide and indium oxide is formed by CVD. However, with this method, there are problems in addition to the high cost of the apparatus, such as the drop-off of the optical element within the cathode ray tube and a decrease in dimensional accuracy.
従来のＴｉアルコキシドのアルコール溶液を用いた場合
、１６０℃程度で焼成で導電膜を作ることはできなかっ
た。When a conventional alcohol solution of Ti alkoxide was used, a conductive film could not be formed by baking at about 160°C.
また導電体に用いる材料としては酸化スズが最も一般的
であるが、この場合低温処理では高性能膜が得にくい欠
点があった。Furthermore, tin oxide is the most common material used for the conductor, but in this case, it has the disadvantage that it is difficult to obtain a high-performance film with low-temperature treatment.
［発明の解決しようとする問題点］
本発明は従来技術が有していた前述の欠点を解消しよう
とするものであり、低温熱処理が可能な高特性帯電防止
膜を新規に提供することを目的とするものである。[Problems to be Solved by the Invention] The present invention aims to eliminate the above-mentioned drawbacks of the prior art, and aims to provide a new high-performance antistatic film that can be heat treated at low temperatures. That is.
［問題点を解決するための手段］
本発明は前述の問題点を解決すべ（なされたものであり
、ブラウン管のフェイス面に被着された帯電防止膜であ
って、該帯電防止膜は導電性酸化チタン粒子を含有する
ブラウン管の帯電防止膜及びブラウン管フェース表面に
、水に導電性酸化チタン粒子をコロイド粒子として分散
させた水性ゾル液に有機溶媒とケイ素化合物を加えた溶
液を塗布し、１００〜４００℃で加熱することを特徴と
するブラウン管の帯電防止膜の製造方法を提供するもの
である。[Means for Solving the Problems] The present invention has been made to solve the above-mentioned problems, and is an antistatic film deposited on the face of a cathode ray tube, the antistatic film being a conductive film. A solution prepared by adding an organic solvent and a silicon compound to an aqueous sol solution in which conductive titanium oxide particles are dispersed as colloidal particles in water is applied to the antistatic coating of a cathode ray tube containing titanium oxide particles and the surface of the cathode ray tube face. The present invention provides a method for producing an antistatic film for a cathode ray tube, which is characterized by heating at 400°C.
本発明においては導電性酸化チタンとして還元処理もし
くは五個の金属イオンをドープした酸化チタンを用いる
ことが好ましい。還元処理には不活性ガス、Ｎ２ガス、
Ｈ２ガス、もしくはそれらの混合ガスを用いることがで
きる。又、五個の金属イオンとしてはＮｂ 、Ｓｂ 、
Ｔａ等を用いることが好ましく、還元雰囲気でドープす
ることも可能である。In the present invention, it is preferable to use titanium oxide which has been reduced or doped with five metal ions as the conductive titanium oxide. Inert gas, N2 gas,
H2 gas or a mixture thereof can be used. In addition, the five metal ions are Nb, Sb,
It is preferable to use Ta or the like, and it is also possible to dope in a reducing atmosphere.
本発明で用いられる酸化チタンは、既知の合成法いずれ
も可能であり、水熱合成によって得られる溶液をそのま
ま利用することも可能である。超微粒子の粉末として得
た場合は均一に水に分散させることが重要である。また
分散する際、溶液と粉末の接触を容易ならしめるため撹
拌を行なうことが望ましい。この場合、コロイドミル、
ボールミル、サンドミル、ホモミキサー等市販の粉砕器
を用いることができる。また分散させる際には、２０〜
２００℃の範囲で加熱することもできる。溶液の沸点以
上で撹拌する場合には加圧して液相が保持できるように
する。この様にして酸化チタンがコロイド粒子として分
散した水性ゾルが得られる。本発明における水性ゾルは
そのまま用いることもできるが基体に対する塗布性を増
すために有機溶媒に分散又は置換して用いることも可能
である。親水性有機溶媒としてはメタノール、エタノー
ル。The titanium oxide used in the present invention can be synthesized by any known synthesis method, and it is also possible to use a solution obtained by hydrothermal synthesis as it is. When obtained as ultrafine powder, it is important to uniformly disperse it in water. Further, during dispersion, it is desirable to perform stirring to facilitate contact between the solution and the powder. In this case, a colloid mill,
Commercially available pulverizers such as ball mills, sand mills, and homomixers can be used. Also, when dispersing, 20~
It is also possible to heat in the range of 200°C. When stirring above the boiling point of the solution, apply pressure to maintain the liquid phase. In this way, an aqueous sol in which titanium oxide is dispersed as colloidal particles is obtained. The aqueous sol in the present invention can be used as it is, but it can also be used after being dispersed or substituted with an organic solvent in order to increase the applicability to the substrate. Examples of hydrophilic organic solvents include methanol and ethanol.
プロパツール、ブタノール等アルコール類、エチルセロ
ソルブ等エーテル類等が任意に使用できる。Alcohols such as propatool and butanol, ethers such as ethyl cellosolve, etc. can be used arbitrarily.
また本発明において用いる酸化チタンを含む液体には膜
の付着強度及び硬度を向上させるためにバインダーとし
て５Ｌ（ＯＲ）ｙ’Ｒ４−ｙ （ｙ＝３．４、Ｒ：ア
ルキル基）等のケイ素化合物を添加することも可能であ
る。更に基体との濡れ性を向上させるために種々の界面
活性剤を添加することもできる。In addition, the liquid containing titanium oxide used in the present invention contains a silicon compound such as 5L(OR)y'R4-y (y=3.4, R: alkyl group) as a binder to improve the adhesion strength and hardness of the film. It is also possible to add. Furthermore, various surfactants may be added to improve wettability with the substrate.
導電性酸化チタンＴｉＯｘとケイ素化合物Ｓｉ （ＯＲ
） ｙ・Ｒ４−ｙの重量比はＴｉＯｘ／ Ｓｉ０ｇ換算
で１７６から１まで混合することができるが、好ましく
は１１５から１７３にするとよい。また液中のＴｉＯｘ
の含量は０．１〜５ｗｔ％含まれていることが好ましい
。Conductive titanium oxide TiOx and silicon compound Si (OR
) The weight ratio of y/R4-y can be mixed from 176 to 1 in terms of 0 g of TiOx/Si, but preferably from 115 to 173. Also, TiOx in the liquid
The content of is preferably 0.1 to 5 wt%.
上記で合成したゾル液の基体上への塗布法としては従来
用いられてきた方法、即ちスピンコード、デイツプコー
ト、スプレーコート法等が好適に使用できる。また、ス
プレーコートして表面に凹凸を形成し防眩効果も併せて
付与してもよく、その場合防眩帯電防止膜となった本発
明品の上にシリカ被膜等のハードコートを設けてもよい
。さらには、本発明の帯電防止膜の上にスプレーコート
して、表面に凹凸を有するシリカ被膜のノングレアコー
トを設けてもよい。As a method for applying the sol solution synthesized above onto a substrate, conventional methods such as spin cord, dip coating, and spray coating methods can be suitably used. In addition, an anti-glare effect may also be provided by spray coating to form irregularities on the surface. In this case, a hard coat such as a silica film may be provided on the product of the present invention, which serves as an anti-glare antistatic film. good. Furthermore, a non-glare coat of silica film having an uneven surface may be provided by spray coating on the antistatic film of the present invention.
また、同様に本発明品の帯電防止膜の上に、ＭｇＦｚ
、５ｉＯａ等の酸化チタンより成る膜より低屈折率の材
料を含む液を適宜の光学膜厚となるようコートして、多
層干渉効果による低反射の帯電防止膜とすることもでき
る。Similarly, on the antistatic film of the product of the present invention, MgFz
, 5iOa or the like can be coated with a liquid containing a material having a lower refractive index than that of a film made of titanium oxide so as to have an appropriate optical thickness, thereby forming an antistatic film with low reflection due to the multilayer interference effect.
本発明の帯電防止膜を形成する基体としては、ブラウン
管パネル、複写機用ガラス板、計算機用パネル、クリー
ンルーム用ガラス、ＣＲＴ或いはＬＣＤ等の表示装置の
前面板等の各種ガラス、プラスチック基板を用いること
ができる。As the substrate on which the antistatic film of the present invention is formed, various glasses and plastic substrates such as cathode ray tube panels, copying machine glass plates, computer panels, clean room glass, and front panels of display devices such as CRTs and LCDs can be used. I can do it.
本発明における酸化チタンゾルはそれ自体で基体上への
塗布液として供し得るため、低沸点の溶媒を用いた場合
、室温下での乾燥で均一な酸化チタン膜が得られるが、
高沸点溶媒を用いた場合或いは膜の強度を向上させたい
場合、塗布した基板を加熱する。加熱温度の上限は基板
に用いられるガラス、プラスチック等の軟化点によって
決定される。この点も考慮すると好ましい温度範囲は１
００〜４００℃である。The titanium oxide sol in the present invention can be used as a coating solution on a substrate by itself, so if a low boiling point solvent is used, a uniform titanium oxide film can be obtained by drying at room temperature.
When a high boiling point solvent is used or when it is desired to improve the strength of the film, the coated substrate is heated. The upper limit of the heating temperature is determined by the softening point of the glass, plastic, etc. used for the substrate. Considering this point, the preferred temperature range is 1
00-400°C.
［実施例］
以下に本発明の実施例を挙げ更に説明を行なうが、本発
明はこれらに限定されるものではない。[Examples] The present invention will be further explained below with reference to Examples, but the present invention is not limited thereto.
（実施例１）
ＴｉＯｘをＡｒガス雰囲気中で８００℃で２時間加熱し
て還元して得られた導電性酸化チタンＴｉ０ｘ（ｘ＝１
．６〜１．９ ） １５ｇを塩酸であらかじめｐＨ３に
調整した水溶液８５ｇ中に添加してサンドミルで４時間
粉砕し、９０℃で１時間加熱解膠した後、濃度を１０重
量％にしてゾル液を調製した。このゾル液に、エチルシ
リケートを加水分解しエタノールにシリカ換算で３重量
％添加した溶液をＴ １０ ｘと ＳｉＯ２の重量比が
１＝３になるように調製し、さらにこれをエタノールで
希釈した溶液をブラウン管パネル表面に ５０Ｏｒｐｍ
の回転速度で３０秒間スピンコード法で塗布し、その後
１６０℃で３０分間加熱し約１１００ｎの膜を得た。こ
のコート膜の表面抵抗はｌＸｌ０’ （Ω／口）でヘ
ーズは１％であった。(Example 1) Conductive titanium oxide TiOx (x=1
．． 6-1.9) 15g was added to 85g of an aqueous solution previously adjusted to pH 3 with hydrochloric acid, ground in a sand mill for 4 hours, peptized by heating at 90°C for 1 hour, and the sol solution was adjusted to a concentration of 10% by weight. Prepared. To this sol solution, a solution was prepared by hydrolyzing ethyl silicate and adding 3% by weight in terms of silica to ethanol so that the weight ratio of T 10 x and SiO2 was 1 = 3, and this was further diluted with ethanol. on the surface of the cathode ray tube panel 50Orpm
The coating was applied by a spin code method at a rotational speed of 30 seconds, and then heated at 160° C. for 30 minutes to obtain a film with a thickness of about 1100 nm. The surface resistance of this coated film was lXl0' (Ω/mouth) and the haze was 1%.
（実施例２）
導電性酸化チタンとしてＮｂを１ ｍｏ１％固溶させた
ＴｉＯ□を用いた以外は実施例１と同様におこなった。(Example 2) The same procedure as in Example 1 was performed except that TiO□ in which 1 mol % of Nb was dissolved in solid solution was used as the conductive titanium oxide.
このコート膜の表面抵抗は２Ｘ １０’（Ω／口）でヘ
ーズは１％であった。The surface resistance of this coat film was 2×10' (Ω/mouth) and the haze was 1%.
（比較例）
Ｔ ｌ Ｏｗのかわりにｓｂを１６重量％ドープしたＳ
ｎＯ□を用いた以外は実施例１と同様におこなった。(Comparative example) S doped with 16% by weight of sb instead of T l Ow
The same procedure as in Example 1 was performed except that nO□ was used.
表面抵抗は＞ １０”でヘーズは５％であった。Surface resistance was >10'' and haze was 5%.
［発明の効果］
本発明によればスプレー又はスピンコード或いは溶液中
に基体を浸漬するなどの簡便な方法により効率良く優れ
た帯電防止膜を提供することが可能となる。[Effects of the Invention] According to the present invention, it is possible to efficiently provide an excellent antistatic film by a simple method such as spraying, spin cording, or immersing a substrate in a solution.
本発明は生産性に優れ、かつ真空を必要としないので装
置も比較的簡単なものでよい。特にＣＲＴのパネルフェ
イス面等の大面積の基体にも充分適用でき、量産も可能
であるため工業的価値は非常に高い。The present invention has excellent productivity and does not require a vacuum, so the apparatus may be relatively simple. In particular, it can be sufficiently applied to large-area substrates such as CRT panel faces, and can be mass-produced, so its industrial value is extremely high.
従来のＴｉアルコキシドのアルコール溶液では１６０℃
焼成で導電膜を作ることはできないが。In the conventional alcohol solution of Ti alkoxide, the temperature is 160°C.
However, it is not possible to create a conductive film by firing.
本発明では導電膜を作ること４ｓできる。また、ＳｎＯ
□とエチルシリケートの系の導電膜に比べ、ＴｉＯｘと
エチルシリケートの方が相溶性に優れ、５ｉ−０−Ｔｉ
のネットワークを形成しやすいので膜強度が強くなる。According to the present invention, a conductive film can be formed in 4 seconds. Also, SnO
Compared to the conductive film of □ and ethyl silicate, TiOx and ethyl silicate have better compatibility, and 5i-0-Ti
Because it is easy to form a network, the film strength becomes stronger.
Claims (4)
であって、該帯電防止膜は導電性酸化チタン粒子を含有
するブラウン管の帯電防止膜。(1) An antistatic film for a cathode ray tube, the antistatic film being deposited on the face of a cathode ray tube, the antistatic film containing conductive titanium oxide particles.
においてｘ＝１．６〜１．９としたものである請求項１
記載のブラウン管の帯電防止膜。(2) The conductive titanium oxide particles have a molecular formula of TiO_x
Claim 1, wherein x=1.6 to 1.9.
Antistatic coating for the cathode ray tube described.
５価の金属イオンをドープしたものである請求項１記載
のブラウン管の帯電防止膜。(3) The antistatic film for a cathode ray tube according to claim 1, wherein the conductive titanium oxide particles are titanium oxide particles doped with pentavalent metal ions.
ン粒子をコロイド粒子として分散させた水性ゾル液に有
機溶媒とケイ素化合物を加えた溶液を塗布し、１００〜
４００℃で加熱することを特徴とするブラウン管の帯電
防止膜の製造方法。(4) A solution prepared by adding an organic solvent and a silicon compound to an aqueous sol solution prepared by dispersing conductive titanium oxide particles as colloidal particles in water is applied to the surface of the cathode ray tube, and
A method for producing an antistatic film for a cathode ray tube, which comprises heating at 400°C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29066990A JPH04167343A (en) | 1990-10-30 | 1990-10-30 | Antistatic film for cathode-ray tube and manufacture of said film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29066990A JPH04167343A (en) | 1990-10-30 | 1990-10-30 | Antistatic film for cathode-ray tube and manufacture of said film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04167343A true JPH04167343A (en) | 1992-06-15 |
Family
ID=17758964
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29066990A Pending JPH04167343A (en) | 1990-10-30 | 1990-10-30 | Antistatic film for cathode-ray tube and manufacture of said film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04167343A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016136008A1 (en) * | 2015-02-24 | 2016-09-01 | コニカミノルタ株式会社 | Organic light emitting element |
-
1990
- 1990-10-30 JP JP29066990A patent/JPH04167343A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016136008A1 (en) * | 2015-02-24 | 2016-09-01 | コニカミノルタ株式会社 | Organic light emitting element |
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