JPH05226266A - Semiconductor manufacturing device - Google Patents

Abstract

PURPOSE:To prevent the powdering of silicon and further prevent silicon from being deposited and adhering to a reaction chamber as powdered dust and form a thin film semiconductor with efficiency by supplying a carrier gas into the reaction chamber around a discharge area so as to inhibit an active reaction gas from remaining in the active reaction chamber. CONSTITUTION:A carrier gas cg is supplied into a reaction chamber 5 by way of communication holes 9a on an inner wall 9 installed inside a chamber. A reaction gas 'g' supplied into a discharge area in the reaction chamber 5 deposits a thin film on an insulation board 3 by discharge while the carrier gas cg inhibits activation reaction gas from turning and forcibly exhausts the gas.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to improvements in semiconductor manufacturing equipment.

[0002]

2. Description of the Related Art A conventional technique will be described with reference to FIG.
This figure shows one of several semiconductor manufacturing apparatuses. In the process of manufacturing semiconductor elements, thin films of semiconductors, insulators, metals, etc. are deposited by chemical vapor deposition (Chemical Vapor Deposition).
Abbreviation CVD. That is, when the raw material is vaporized or gas is deposited by a chemical reaction on a heated insulating substrate), not only thermal energy but also light emission by plasma discharge is used. This is a chamber of a plasma CVD apparatus using a glow discharge that can achieve high efficiency. Supply port 6a of the chamber
The reaction gas g supplied into the reaction chamber 5 from the electrode unit 4
Of the cathode plate 1 is evenly supplied from the entire surface of the cathode plate 1 onto the insulating substrate 3, and a high-frequency electric field is applied to the discharge region 7 between the cathode plate 1 and the anode plate 2 to cause plasma discharge to decompose it into an active state. And is deposited as a thin film on the insulating substrate. The reaction gas g after the reaction is forcibly discharged from the exhaust port 6b to the outside of the reaction chamber via a vacuum pump (not shown). At this time, the activated gas in the plasma discharge stays at a relatively low temperature portion in the vicinity of the inner surface of the wall of the reaction chamber 5 and deposits or adheres the powder-like silicon. When powder-like silicon dust is generated, accumulated and adhered inside the reaction chamber 5, the following problems occur.

(1) If powder-like silicon gradually increases as dust in the reaction chamber and adheres or deposits on the inner surface of the wall, the reaction gas in the discharge region seriously affects the original yield of semiconductor thin film production. (2) The powder-like silicon also adheres to the inner wall of an exhaust pipe (not shown) connected to the exhaust port, gradually clogging the inside of the pipe and lowering the exhaust capacity.
(3), and powdery silicon is silicon hydride (Six
Hy), which belongs to a hydrogen compound, is ignitable and easily causes a dust explosion. Therefore, when a large amount is accumulated in the exhaust pipe, there is a great risk of explosion and it causes a great deal of damage to an expensive device.

[0004]

The problem to be solved is that powder-like silicon generated in the reaction chamber during the deposition of the semiconductor thin film by the reaction gas is deposited to cause various adverse effects on the semiconductor manufacturing apparatus and products. is there.

[0005]

According to the present invention, a reaction chamber is provided in a chamber through an inner wall, a semiconductor thin film is deposited by a reaction gas in a discharge region in the reaction chamber, and a carrier gas is reacted from the inner wall. It is characterized in that it is configured so as to be ejected and supplied into the room. The purpose of preventing the deposition and adhesion of powdery silicon due to the retention of the activated reaction gas in the reaction chamber has been realized by using a member having a simple structure and a carrier gas without making the apparatus complicated and large.

[0006]

The reaction gas is supplied to the discharge region in the reaction chamber, and the reaction gas decomposed by plasma discharge and decomposed forms and deposits a thin film on the insulating substrate, and the carrier gas is supplied from the inner wall to the reaction chamber. The activated reaction gas is forcibly discharged from the exhaust port by the vacuum pump without accumulating and adhering as the powder-like silicon in the reaction chamber.

[0007]

1 is a simplified vertical sectional view of a chamber of a plasma CVD apparatus showing an embodiment of the present invention. An inner wall 9 is provided inside a chamber side wall, and a cathode plate 1 is provided inside a reaction chamber 5 inside the chamber. , Electrode unit 4, anode plate 2, insulating substrate 3
And a plasma discharge region 7 is surrounded by a shield 8, a supply port 10 for supplying a carrier gas and a large number of through holes 9a are formed in the inner wall 9 on the side of the chamber, and the inner wall 9 is penetrated. This is a configuration in which a supply port 6a for reaction gas and a total exhaust port 6b are provided.

According to the structure of the present invention, the chamber is provided with an inner wall having a large number of through holes for supplying the carrier gas cg, and the carrier gas cg is supplied to the through holes. It can be constructed by incidental work.

In the device of the present invention having the above structure, the pressure in the discharge region 7 surrounded by the shield in advance is made high, and the pressure in the reaction chamber 5 at the outer periphery thereof is made low, and the carrier gas cg supplied from the supply port 10 is discharged. The flow rate is adjusted so that it does not flow into the area and the supply is adjusted. The reaction gas supplied from the reaction gas supply port 6a to the shield discharge region 7 flows through the electrode unit 4 and is uniformly supplied from the entire surface of the cathode plate 1 onto the insulating substrate 3 of the anode plate 2. It is decomposed into an active state by plasma discharge between the anode plates to form and deposit a thin film on the insulating substrate 3,
When the reaction gas after the reaction flows into the reaction chamber 5 outside the discharge area through the gap of the shield, the carrier gas (hydrogen gas or nitrogen gas) cg supplied into the reaction chamber from the supply port 10 suppresses the activity of the reaction gas. By driving the vacuum pump, the reaction gas does not stay in the reaction chamber and the exhaust port 6b
Is forced to be discharged from.

[0010]

The semiconductor manufacturing apparatus of the present invention has the above structure.
Since it has a function, the activated reaction gas that deposits a thin film on the insulating substrate is suppressed in activity by the carrier gas supplied into the reaction chamber and is discharged from the total exhaust port by the vacuum pump without staying in the low temperature part in the reaction chamber. To be done. Therefore, it prevents harmful and dangerous accumulation of ignitable powdery silicon in the reaction chamber, exhaust pipe, etc., and does not clog the exhaust pipe to reduce exhaust capacity or cause a dangerous dust explosion. The yield no longer declines. Moreover, it is an invention of a device having a beneficial effect that the structure is simple and the manufacturing is easy.

[Brief description of drawings]

FIG. 1 is a simplified vertical sectional view of a semiconductor manufacturing apparatus.

FIG. 2 is a simplified vertical sectional view of a conventional semiconductor manufacturing apparatus.

[Explanation of symbols]

 1 cathode plate 2 anode plate 4 electrode unit 5 reaction chamber cg carrier gas

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁵ Identification number Internal reference number for FI Technical indication H01L 21/302 B 7353-4M 21/31 B 8518-4M (72) Inventor Kazuyuki Zaitsu Osaka, Osaka 22-22 Nagaike-cho, Nagano-cho, Abeno-ku, Japan (72) Inventor Shinji Mauri 22-22 Sharp-corp., Nagaike-cho, Abeno-ku, Osaka-shi, Osaka

Claims (2)

[Claims] 1. A carrier gas is supplied into a reaction chamber through an inner wall provided inside a chamber side wall, and a reaction gas for depositing a thin film on an insulating substrate in a discharge region in the reaction chamber is supplied to the reaction chamber. A semiconductor manufacturing apparatus, characterized in that the supplied carrier gas does not turn into a silicon powder and is prevented from adhering to and depositing on the inner wall of a reaction chamber, an exhaust port, etc. 2. The semiconductor manufacturing apparatus according to claim 1, wherein the discharge region in the reaction chamber is surrounded by a shield to prevent leakage of the reaction gas.