JPH05225528A - Magnetic recording and reproducing device - Google Patents

Magnetic recording and reproducing device

Info

Publication number
JPH05225528A
JPH05225528A JP2233692A JP2233692A JPH05225528A JP H05225528 A JPH05225528 A JP H05225528A JP 2233692 A JP2233692 A JP 2233692A JP 2233692 A JP2233692 A JP 2233692A JP H05225528 A JPH05225528 A JP H05225528A
Authority
JP
Japan
Prior art keywords
head
magnetic
insulating layer
effect element
magnetoresistive effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2233692A
Other languages
Japanese (ja)
Inventor
Naoki Koyama
直樹 小山
Isamu Yuhito
勇 由比藤
Hideo Tanabe
英男 田辺
Masahiro Kitada
正弘 北田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2233692A priority Critical patent/JPH05225528A/en
Publication of JPH05225528A publication Critical patent/JPH05225528A/en
Pending legal-status Critical Current

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  • Magnetic Heads (AREA)

Abstract

PURPOSE:To provide the structure of a head preventing the electrical damage of the head due to the contact between a magneto-resistance effect type head and a disk. CONSTITUTION:A magneto-resistance effect element 8 and magnetic shield layers 2 and 3 around the element 8 are electrically connected, and the tip of the magneto-resistance effect element 8 is recessed from the tips of the magnetic shield layers 2 and 3. Consequently, since electric current flows through the magnetic layers previous to the magneto-resistance effect element when the head comes into contact with the disk, the element is prevent from damaging.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は磁気記録再生装置に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic recording / reproducing device.

【0002】[0002]

【従来の技術】磁気抵抗効果型ヘッドは素子に電流を流
して動作させる。このため、ヘッドがディスクと接触し
た場合にはディスクを介して過大な電流が流れる場合が
あり、これによって素子が破壊される場合がある。これ
を防ぐ手段として特開平2−94103 号公報に開示されて
いるように、過電流を防止する回路が知られている。ま
た、民生用磁気抵抗効果型ヘッドでは人体と接触して生
じる腐食を防止するために、特公平2−50525号公報に記
載のように、素子の近傍に導電性基板を置いて人体を接
地させ、逆電位を印加する方法が知られている。
2. Description of the Related Art A magnetoresistive head is operated by passing a current through an element. Therefore, when the head comes into contact with the disk, an excessive current may flow through the disk, which may damage the element. As a means for preventing this, a circuit for preventing overcurrent is known, as disclosed in Japanese Patent Laid-Open No. 2-94103. Further, in order to prevent corrosion caused by contact with the human body in the consumer magnetoresistive head, as described in Japanese Patent Publication No. 2-50525, a conductive substrate is placed near the element to ground the human body. A method of applying a reverse potential is known.

【0003】[0003]

【発明が解決しようとする課題】上記の従来技術では、
通常の再生回路に加えて保護回路が必要なため、回路の
構成が複雑であった。
SUMMARY OF THE INVENTION In the above prior art,
Since the protection circuit is required in addition to the normal reproduction circuit, the circuit configuration is complicated.

【0004】[0004]

【課題を解決するための手段】本発明では磁気抵抗効果
素子と、これに近接して設けた磁気シールドとを電気的
に接続し、さらに浮上面側に露出する磁気抵抗効果素子
の先端を、磁気シールドの先端よりも引っ込める。
According to the present invention, the tip of the magnetoresistive effect element, which is electrically connected to the magnetoresistive effect element and a magnetic shield provided close to the magnetoresistive effect element, and which is exposed on the air bearing surface side, Withdraw more than the tip of the magnetic shield.

【0005】[0005]

【作用】ヘッドと媒体が接触した場合に磁気抵抗効果素
子が媒体に接触するよりも先に磁気シールドと媒体が接
触するために、磁気シールドを通じて電流がながれ、磁
気抵抗効果素子に過電流がながれて損傷することがな
い。
When the head and the medium come into contact with each other, the magnetic shield and the medium come into contact with each other before the magnetoresistive effect element comes into contact with the medium. Therefore, a current flows through the magnetic shield, and an overcurrent flows through the magnetoresistive effect element. Will not be damaged.

【0006】[0006]

【実施例】本発明の第一の実施例を図1を用いて説明す
る。この図は磁気抵抗効果型ヘッドのトラック幅方向か
ら見た断面図である。磁気ヘッドを支持するスライダ基
体1、軟磁性膜からなる二枚の磁気シールド層2,3、
シールド層と基体の間に設けた第一の絶縁層4、磁気シ
ールド層2,3間に挾まれた第二の絶縁層5,6、上記
絶縁層5,6に挟まれた磁気抵抗効果素子8およびヘッ
ド保護膜として設けた第三の絶縁層7からなる。通常
は、さらにこの保護膜の上に記録用の誘導型薄膜ヘッド
を積層するが、同図では省略してある。
EXAMPLE A first example of the present invention will be described with reference to FIG. This figure is a cross-sectional view of the magnetoresistive head as seen from the track width direction. A slider base 1 for supporting the magnetic head, two magnetic shield layers 2, 3 made of a soft magnetic film,
A first insulating layer 4 provided between the shield layer and the base, second insulating layers 5 and 6 sandwiched between the magnetic shield layers 2 and 3, and a magnetoresistive effect element sandwiched between the insulating layers 5 and 6. 8 and a third insulating layer 7 provided as a head protection film. Normally, an inductive thin film head for recording is further laminated on this protective film, but it is omitted in the figure.

【0007】ここで、スライダ基体1はアルミナチタン
カーバイドを使用したが、通常スライダに使用される材
料であれば、別ものでもよい。シールド層2,3および
磁気抵抗効果素子8には81Ni−19Feのパーマロ
イを用いた。シールド層2,3の膜厚はいずれも1.5
μm で、磁気抵抗効果素子8の膜厚は20nmであ
る。磁気抵抗効果素子8の動作に必要なバイアス磁界
は、磁気抵抗効果膜に接して設けた膜厚30nmのNb
からなる導体(図示略)を用いて印加する。
Although alumina titanium carbide is used for the slider base 1, another material may be used as long as it is a material normally used for sliders. 81Ni-19Fe permalloy was used for the shield layers 2 and 3 and the magnetoresistive effect element 8. The thickness of the shield layers 2 and 3 is 1.5
The thickness of the magnetoresistive effect element 8 is 20 nm. The bias magnetic field required for the operation of the magnetoresistive effect element 8 is Nb with a film thickness of 30 nm provided in contact with the magnetoresistive effect film.
It is applied using a conductor (not shown) made of.

【0008】ここで、第一の絶縁層4、および第三の絶
縁層7には45wt%の酸化珪素を含むアルミナを用い
た。それぞれ膜厚は8μm,10μmである。第2の絶
縁層5,6には25wt%の酸化珪素を含むアルミナを
用いた。膜厚はいずれも0.15μmである。また図中には
示されていないが、磁気抵抗効果素子端子の一端は流入
端側の磁気シールド層に電気的に接続されている。
Alumina containing 45 wt% of silicon oxide was used for the first insulating layer 4 and the third insulating layer 7. The film thickness is 8 μm and 10 μm, respectively. Alumina containing 25 wt% of silicon oxide was used for the second insulating layers 5 and 6. The film thickness is 0.15 μm in each case. Although not shown in the figure, one end of the magnetoresistive effect element terminal is electrically connected to the magnetic shield layer on the inflow end side.

【0009】このヘッド素子を切断後、浮上面研磨を行
なう。研磨は通常使用するダイアモンド砥粒を含むラッ
ピング液を用い、pHを約4にして行なった。研磨はメ
カノケミカル的に進行するが、硬さの違いにより浮上面
の形状は、図に示したようにシールド層2,3および磁
気抵抗効果層8では先端が絶縁層よりもわずかに引っ込
む。また、シールド層2,3と磁気抵抗効果素子8を比
べると、磁気抵抗効果素子8のほうがわずかによけいに
引っ込む。これは第二の絶縁層5,6のほうが第一,三
の絶縁層4,7よりも化学的なエッチング速度が早いた
めである。このように、磁気抵抗効果素子を挾む絶縁層
のラッピング速度を周囲の絶縁層のラッピング速度と変
えることによって引っ込み量を制御できる。本実施例に
おける平均的な引っ込み量は第一,三の絶縁層の位置に
対して、シールド層で約5nm磁気抵抗効果素子で7n
m引っ込んでいる。
After cutting the head element, the air bearing surface is polished. Polishing was carried out by using a lapping solution containing diamond abrasive grains that is usually used and adjusting the pH to about 4. Although polishing progresses mechanochemically, the tip of the air bearing surface is slightly retracted in the shield layers 2 and 3 and the magnetoresistive layer 8 as compared with the insulating layer due to the difference in hardness. Further, comparing the shield layers 2 and 3 with the magnetoresistive effect element 8, the magnetoresistive effect element 8 is slightly retracted. This is because the second insulating layers 5 and 6 have a higher chemical etching rate than the first and third insulating layers 4 and 7. In this way, the amount of retraction can be controlled by changing the lapping speed of the insulating layer sandwiching the magnetoresistive effect element and the lapping speed of the surrounding insulating layer. The average amount of retraction in this example is about 5 nm in the shield layer and 7 n in the magnetoresistive element with respect to the positions of the first and third insulating layers.
I'm withdrawn.

【0010】このような磁気抵抗効果素子の先端を磁気
シールド層の先端よりも引っ込めたヘッドを用いて接触
によるヘッドの損傷の頻度を調べると、従来の先端が一
致しているヘッドに比べて発生頻度は約20%に低減で
きた。
When the frequency of head damage due to contact is investigated using a head in which the tip of such a magnetoresistive effect element is retracted from the tip of the magnetic shield layer, it is generated as compared with the conventional head having the same tip. The frequency could be reduced to about 20%.

【0011】なお、上記実施例では絶縁層のラッピング
速度を変えるために酸化珪素の含有量を変えた場合を示
したが、酸化ジルコニウムや酸化タンタルを添加しても
同様な効果があり、いずれも添加料を少なくするとラッ
ピング速度を速くすることができる。
In the above examples, the case where the content of silicon oxide was changed in order to change the lapping rate of the insulating layer was shown. However, the same effect can be obtained by adding zirconium oxide or tantalum oxide. The lapping speed can be increased by reducing the additive.

【0012】[0012]

【発明の効果】本発明によれば、ヘッドとディスクの電
気的な接触による磁気抵抗効果素子の損傷を防止するこ
とができる。
According to the present invention, it is possible to prevent the magnetoresistive effect element from being damaged by the electrical contact between the head and the disk.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の実施例を示すヘッドの断面図。FIG. 1 is a sectional view of a head showing an embodiment of the present invention.

【符号の説明】[Explanation of symbols]

1…スライダ基板、2,3…シールド層、4…第一絶縁
層、5,6…第二絶縁層、7…第三絶縁層、8…磁気抵
抗効果素子。
1 ... Slider substrate, 2, 3 ... Shield layer, 4 ... First insulating layer, 5, 6 ... Second insulating layer, 7 ... Third insulating layer, 8 ... Magnetoresistive effect element.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 北田 正弘 東京都国分寺市東恋ケ窪1丁目280番地 株式会社日立製作所中央研究所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Masahiro Kitada 1-280, Higashi Koigokubo, Kokubunji, Tokyo Inside the Central Research Laboratory, Hitachi, Ltd.

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】磁気抵抗効果を持つ強磁性薄膜を絶縁層を
介して軟磁性材料で挾んだ磁気抵抗効果型ヘッドを持つ
磁気記録装置において、媒体面に露出する磁気シールド
層と前記媒体の距離よりも前記強磁性薄膜と前記媒体と
の距離のほうが大きいことを特徴とする磁気記録再生装
置。
1. A magnetic recording device having a magnetoresistive head in which a ferromagnetic thin film having a magnetoresistive effect is sandwiched by a soft magnetic material with an insulating layer interposed between the magnetic shield layer exposed on the medium surface and the medium. A magnetic recording / reproducing apparatus characterized in that a distance between the ferromagnetic thin film and the medium is larger than a distance.
【請求項2】請求項1において、前記磁気シールド層の
内側に設けられた磁気抵抗効果素子を挾む絶縁層と、前
記絶縁層以外の絶縁層との材料組成が異なる磁気ヘッド
を用いた磁気記録再生装置。
2. A magnetic head using a magnetic head according to claim 1, wherein an insulating layer sandwiching the magnetoresistive element provided inside the magnetic shield layer and an insulating layer other than the insulating layer have different material compositions. Recording / playback device.
JP2233692A 1992-02-07 1992-02-07 Magnetic recording and reproducing device Pending JPH05225528A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2233692A JPH05225528A (en) 1992-02-07 1992-02-07 Magnetic recording and reproducing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2233692A JPH05225528A (en) 1992-02-07 1992-02-07 Magnetic recording and reproducing device

Publications (1)

Publication Number Publication Date
JPH05225528A true JPH05225528A (en) 1993-09-03

Family

ID=12079866

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2233692A Pending JPH05225528A (en) 1992-02-07 1992-02-07 Magnetic recording and reproducing device

Country Status (1)

Country Link
JP (1) JPH05225528A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5936801A (en) * 1997-04-04 1999-08-10 Seagate Technology, Inc. Head slider with partially recessed magnetoresistive element
US5991119A (en) * 1997-11-03 1999-11-23 Seagate Technology, Inc. Proximity head slider having recessed magnetoresistive read transducer
US6084752A (en) * 1996-02-22 2000-07-04 Matsushita Electric Industrial Co., Ltd. Thin film magnetic head
KR100594158B1 (en) * 1999-03-25 2006-06-28 삼성전자주식회사 Magnetic Head Device and Manufacturing Method

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6084752A (en) * 1996-02-22 2000-07-04 Matsushita Electric Industrial Co., Ltd. Thin film magnetic head
US6400537B2 (en) 1996-02-22 2002-06-04 Matsushita Electric Industrial Co., Ltd. Thin film magnetic head
US5936801A (en) * 1997-04-04 1999-08-10 Seagate Technology, Inc. Head slider with partially recessed magnetoresistive element
US5991119A (en) * 1997-11-03 1999-11-23 Seagate Technology, Inc. Proximity head slider having recessed magnetoresistive read transducer
US6324747B1 (en) 1997-11-03 2001-12-04 Seagate Technology Llc magnetoresistive proximity concept head slider
KR100594158B1 (en) * 1999-03-25 2006-06-28 삼성전자주식회사 Magnetic Head Device and Manufacturing Method

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