JPH05211129A - Mold working method for pressing rubber plate for wafer mounting in ion implanter - Google Patents

Mold working method for pressing rubber plate for wafer mounting in ion implanter

Info

Publication number
JPH05211129A
JPH05211129A JP8930891A JP8930891A JPH05211129A JP H05211129 A JPH05211129 A JP H05211129A JP 8930891 A JP8930891 A JP 8930891A JP 8930891 A JP8930891 A JP 8930891A JP H05211129 A JPH05211129 A JP H05211129A
Authority
JP
Japan
Prior art keywords
wafer
mold
rubber plate
ion implanter
processed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8930891A
Other languages
Japanese (ja)
Other versions
JP2748194B2 (en
Inventor
Tadamoto Tamai
忠素 玉井
Junichi Murakami
純一 村上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Heavy Industries Ion Technology Co Ltd
Original Assignee
Sumitomo Eaton Nova Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Eaton Nova Corp filed Critical Sumitomo Eaton Nova Corp
Priority to JP8930891A priority Critical patent/JP2748194B2/en
Publication of JPH05211129A publication Critical patent/JPH05211129A/en
Application granted granted Critical
Publication of JP2748194B2 publication Critical patent/JP2748194B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Moulds For Moulding Plastics Or The Like (AREA)

Abstract

PURPOSE:To improve a mold which is used to stick a rubber plate for mounting a wafer to a wafer retaining part of an ion implanter, and make said mold contribute to the adhesion between the rubber plate and the wafer and the sticking prevention of the wafer. CONSTITUTION:A mold 25 is brought into a fixed state on the peripheral part. The surface to be worked is subjected to milling under the state that a pressing force is applied to the central part of a surface of the mold which surface is opposite to the surface to be worked. Thereby the surface to be worked is turned into a recessed spherical surface. A rubber plate is set on a wafer retaining part in the manner in which the recessed spherical surface is used as the pressing surface against the rubber plate.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明はディスク上のウェハ保持
部に保持されたウェハにイオンビームを照射するイオン
注入装置におけるウェハ冷却のための改良に関し、具体
的にはウェハの冷却促進及びウェハとゴム板との間のス
テッキング防止のためにウェハ保持部に設置されるゴム
板の設置状態を良好にするための改良に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement for cooling a wafer in an ion implantation apparatus for irradiating a wafer held on a wafer holding portion on a disk with an ion beam, and more specifically, to promoting the cooling of the wafer and the wafer cooling. The present invention relates to an improvement for improving the installation state of a rubber plate installed on a wafer holding part to prevent sticking with the rubber plate.

【0002】[0002]

【従来の技術】図3を参照してイオン注入装置の一例を
簡単に説明する。図3において、ディスクチャンバ20
内にウェハ保持用のディスク21が回転可能に配設され
ている。ディスク21は図示しない駆動装置により中心
軸22の回りに高速で回転される。ディスク21の周縁
部に近い環状領域には複数のウェハ保持部が周方向に等
間隔をおいて設けられており、それぞれのウェハ保持部
にウェハ23が保持されている。図示しないイオン発生
源よりイオンビーム24が発生され、このイオンビーム
24はディスク21の半径方向にスキャンされること
で、回転しているディスク21上の各ウェハ23にイオ
ンが注入される。
2. Description of the Related Art An example of an ion implantation apparatus will be briefly described with reference to FIG. In FIG. 3, the disc chamber 20
A disk 21 for holding a wafer is rotatably arranged therein. The disk 21 is rotated at high speed around the central axis 22 by a driving device (not shown). A plurality of wafer holders are provided at equal intervals in the circumferential direction in an annular region near the peripheral edge of the disk 21, and the wafer 23 is held by each wafer holder. An ion beam 24 is generated from an ion generation source (not shown), and the ion beam 24 is scanned in the radial direction of the disk 21 to implant ions into each wafer 23 on the rotating disk 21.

【0003】ところで、ウェハ23は、イオン注入処理
中の温度上昇を抑制するという目的で冷却効果の高いゴ
ム板(例えば、室温硬化性シリコーンゴム)を介してウ
ェハ保持部に保持される。このゴム板は、モールドと呼
ばれる治具によりウェハ保持部にセットされる。このこ
とを図4を参照して簡単に説明すると、モールド25は
ディスク21のウェハ保持部26にゴム板27を貼り付
けるための押し型であり、モールド25の表面形状及び
表面粗さがそのままゴム板27の表面形状、表面粗さに
反映される。モールドの一例として、ゴム板への押付け
面が凹球面となるように旋盤加工にて仕上げたものがあ
る。しかし、このモールドは旧タイプのイオン注入装
置、すなわちウェハをゴム板に押付けるためのウェハ表
面クランプ機構を有するディスクを用い、しかもウェハ
をゴム板に対してロード、アンロードする都度ディスク
が大気解放されるタイプのイオン注入装置に用いられる
ものであった。
By the way, the wafer 23 is held in the wafer holder via a rubber plate (for example, room temperature curable silicone rubber) having a high cooling effect for the purpose of suppressing a temperature rise during the ion implantation process. This rubber plate is set on the wafer holder by a jig called a mold. This will be briefly described with reference to FIG. 4. The mold 25 is a pressing die for attaching the rubber plate 27 to the wafer holding portion 26 of the disk 21, and the surface shape and surface roughness of the mold 25 are the same as the rubber. It is reflected in the surface shape and surface roughness of the plate 27. As an example of the mold, there is a mold finished by lathe processing so that the pressing surface against the rubber plate is a concave spherical surface. However, this mold uses an old type ion implanter, that is, a disk with a wafer surface clamp mechanism for pressing the wafer against the rubber plate, and the disk is released to the atmosphere each time the wafer is loaded and unloaded on the rubber plate. It was used for an ion implanter of the type described above.

【0004】しかしながら、現在のグレードアップされ
たイオン注入装置、すなわちウェハ表面クランプ機構を
廃したクランプレスディスクを使用し、ロード、アンロ
ードを真空中にて行うロードロック機構を有するイオン
注入装置では、上述のモールドを使用してセットしたゴ
ム板ではウェハ冷却効果が不十分である。その原因とし
ては、第1にモールドが旋盤により凹球面に加工されて
いるため、加工面に同心円状のバイト目が段状に残り、
面粗度も粗くゴム板とウェハとの密着性が不十分である
ことがあげられる。第2の原因としては、ロードロック
タイプのイオン注入装置では、ディスクは常時真空中に
置かれているためゴム板が硬化し、均一で十分な熱伝導
が行われないことが考えられる。
However, in the current upgraded ion implanter, that is, the ion implanter having a load lock mechanism for loading and unloading in a vacuum, which uses a clampless disk without a wafer surface clamp mechanism, The rubber plate set by using the above-described mold has an insufficient wafer cooling effect. As the cause, firstly, since the mold is processed into a concave spherical surface by a lathe, concentric cutting tools remain in steps on the processed surface,
The surface roughness is also rough and the adhesion between the rubber plate and the wafer is insufficient. The second cause is that in the load lock type ion implanter, the disk is always placed in a vacuum, so that the rubber plate is hardened and uniform and sufficient heat conduction is not performed.

【0005】上記問題点を解消するためにモールドに各
種の改良が加えられている。その第1の例として、モー
ルド表面(ウェハと接する側の面)を平面とし、研摩加
工にて表面仕上げを行なって面粗度を向上させたものが
提供されている。このようなモールドを使用すること
で、ゴム板に対するウェハの密着性を良くし、ウェハ冷
却効果を高めることができる。しかし、密着性が良くな
るためにウェハのスティッキング(ウェハがゴムに貼り
付いて離れにくくなる)が発生しやすくなる。また、研
摩加工の際にモールドの周縁部に肩だれ現象(周縁部が
滑らかな弧を描くようになる)を生じ易い。このような
モールドによりセットされたゴム板はその周縁部におい
て滑らかな凹面を形成することとなり、ウェハのスティ
ッキングを更に助長する。加えて、研摩加工は面粗度の
管理が難しい。
Various improvements have been made to the mold in order to solve the above problems. As a first example, there is provided a mold whose surface (the surface on the side in contact with the wafer) is a flat surface and whose surface roughness is improved by finishing the surface by polishing. By using such a mold, the adhesion of the wafer to the rubber plate can be improved and the wafer cooling effect can be enhanced. However, since the adhesion is improved, the sticking of the wafer (the wafer sticks to the rubber and becomes difficult to separate) easily occurs. In addition, during the polishing process, a shoulder sagging phenomenon (the peripheral portion forms a smooth arc) is likely to occur at the peripheral portion of the mold. The rubber plate set by such a mold forms a smooth concave surface at the peripheral edge thereof, further promoting the sticking of the wafer. In addition, it is difficult to control surface roughness in polishing.

【0006】[0006]

【発明が解決しようとする課題】上記第1の例の問題点
を解決する第2の例として、モールド表面をフライス加
工にて平面に仕上げたものが提供されている。フライス
加工によれば、モールド周縁部での肩だれ現象は無く、
加工条件(回転数、送り速度、切込み量等)を指定する
ことにより面粗度の管理も容易である。このようにして
モールド周縁部での肩だれ現象を無くしたことにより、
良好なウェハ冷却効果を得られるだけでなく、上記第1
の例のモールドに比べてウェハのスティッキングも発生
しにくい。しかし、スティッキングについては、更に発
生しにくくするための改良が望まれている。本発明の課
題は、ウェハの冷却効果の向上とウェハのスティッキン
グ防止に効果的なモールドの加工方法を提供することに
ある。
As a second example for solving the problems of the first example, there is provided a mold surface whose surface is finished by milling. According to the milling process, there is no shoulder sagging phenomenon at the periphery of the mold,
By specifying the processing conditions (rotation speed, feed rate, depth of cut, etc.), it is easy to control the surface roughness. In this way, by eliminating the shoulder sagging phenomenon at the peripheral edge of the mold,
Not only can a good wafer cooling effect be obtained, but
The sticking of the wafer is less likely to occur as compared with the mold of the above example. However, it is desired to improve sticking so that it is more difficult to occur. An object of the present invention is to provide a method of processing a mold which is effective in improving the cooling effect of the wafer and preventing the sticking of the wafer.

【0007】[0007]

【課題を解決するための手段】本発明によるモールドの
加工方法は、モールドをその周縁部において固定し、こ
のモールドの被加工面とは反対側の面の中心部に押付け
力を作用させた状態で前記被加工面にフライス加工を施
すことにより、前記被加工面が凹球面となるようにした
ことを特徴とする。
In the method of processing a mold according to the present invention, the mold is fixed at its peripheral edge, and a pressing force is applied to the center of the surface of the mold opposite to the surface to be processed. By milling the surface to be processed, the surface to be processed becomes a concave spherical surface.

【0008】[0008]

【作用】本加工方法によれば、モールドの被加工面はそ
の周縁部が固定で、中央部が周縁部に比べて突出した状
態でフライス加工されることにより、被加工面はその中
央部領域の加工度が周縁部領域より高く、結果として被
加工面は曲率半径の大きな凹球面となる。この凹球面
は、ディスクのウェハ保持部にゴム板を貼り付ける際の
押圧面となる。このようなモールドによりウェハ保持部
に貼り付けられたゴム板のウェハ載置面は凸球面とな
る。このようなゴム板にウェハを載置すると、ウェハ周
縁部ではゴム板との間に微小のすき間が生ずるので、ウ
ェハをゴム板から取り去る時離れ易くなる。なお、ウェ
ハ周縁部とゴム板との間のすき間は微小であって、しか
もイオン注入処理中はディスクの回転による遠心力の分
力でウェハがゴム板に押し付けられ、ウェハ周縁部もゴ
ム板に密着する。それ故、ゴム板とウェハとの密着性も
良く、ウェハ冷却に悪影響を及ぼすことも無い。
According to this processing method, the surface to be processed of the mold is milled in a state where the peripheral portion is fixed and the central portion projects more than the peripheral portion. Is higher than the peripheral region, and as a result, the surface to be processed becomes a concave spherical surface with a large radius of curvature. The concave spherical surface serves as a pressing surface when the rubber plate is attached to the wafer holding portion of the disc. The wafer mounting surface of the rubber plate attached to the wafer holding portion by such a mold becomes a convex spherical surface. When the wafer is placed on such a rubber plate, a minute gap is created between the wafer and the rubber plate at the peripheral edge of the wafer, and therefore it becomes easy to separate the wafer from the rubber plate. The gap between the peripheral edge of the wafer and the rubber plate is very small, and the wafer is pressed against the rubber plate by the centrifugal force component of the rotation of the disk during the ion implantation process. In close contact. Therefore, the adhesion between the rubber plate and the wafer is good, and the wafer cooling is not adversely affected.

【0009】[0009]

【実施例】図1,2を参照して本発明の一実施例につい
て説明する。図2において、本発明による加工方法は、
モールド25に対して図示しないフライス研削機により
フライス加工を施している間のモールド25の保持方法
に特徴がある。すなわち、モールド25はその側縁部で
あって90°の角度間隔をおいた位置に溝25−1を有
する。そして、モールド25を締付けにより保持する手
段として、プレート30と、モールド25を挾持するた
めの2つの分割リング31,32と、モールド25にた
わみを与えるための押しボルト33とから成る保持機構
を用いる。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT An embodiment of the present invention will be described with reference to FIGS. In FIG. 2, the processing method according to the present invention is
A characteristic is a method of holding the mold 25 while milling the mold 25 with a milling machine (not shown). That is, the mold 25 has the grooves 25-1 at the side edges thereof at positions with an angular interval of 90 °. As a means for holding the mold 25 by tightening, a holding mechanism including a plate 30, two split rings 31 and 32 for holding the mold 25, and a push bolt 33 for giving the mold 25 a bend is used. ..

【0010】分割リング31,32は結合部34,35
において機械的に分離可能な状態で結合しており、モー
ルド25の溝25−1に対応した位置には溝25−1に
嵌入可能な突出部31a,31b,32a,32bを有
する。分割リング31,32はまた、突出部31a,3
1b,32a,32bの設置箇所に、ねじによるプレー
ト30への取付部36,37,38,39を有する。す
なわち、各取付部36〜39においてねじ(図示せず)
をプレート30のねじ孔にねじ込むことにより、分割リ
ング31,32をプレート30に固定すると共に、プレ
ート30上のモールド25を挾持する。押しボルト33
は、プレート30の中心部にプレート30から出没自在
に設けられており、分割リング31,32により挾持さ
れているモールド25に対してその被加工面(図中、上
面)の中心部を図中上方に突出させるためのものであ
る。
The split rings 31 and 32 are connected to the connecting portions 34 and 35.
In the mold 25, they are joined in a mechanically separable state, and projecting portions 31a, 31b, 32a, 32b that can be fitted into the grooves 25-1 are provided at positions corresponding to the grooves 25-1 of the mold 25. The split rings 31, 32 also have protrusions 31a, 3
Mounting portions 36, 37, 38, 39 to the plate 30 with screws are provided at the installation locations of 1b, 32a, 32b. That is, screws (not shown) at each of the mounting portions 36 to 39
By screwing into the screw hole of the plate 30, the split rings 31 and 32 are fixed to the plate 30, and the mold 25 on the plate 30 is held. Push bolt 33
Is provided in the central portion of the plate 30 so as to be retractable from the plate 30, and the central portion of the surface to be processed (upper surface in the drawing) of the mold 25 held by the split rings 31 and 32 is shown in the drawing. It is for projecting upward.

【0011】次に、図1を参照して本発明による加工方
法について順を追って説明する。図1(a)ではまず、
表面がフラットで側縁部の複数箇所に溝25−1を有す
るモールド25を固定する。図1(b)では図2で説明
した保持機構にモールド25をその被加工面を上にして
セットする。図1(c)では、押しボルト33によりモ
ールド25の中心部を押し上げ、たわませる。すなわ
ち、押しボルト33をねじ込むと、モールド25はその
周縁部が分割リング31,32で固定状態にあるので、
中心部のみが上方にたわむ。勿論、モールド25のたわ
み量は押しボルト33で調節可能であり、あらかじめ計
算された所望の値に設定される。図1(d)では図1
(c)でたわみを与えた状態で被加工面に対してフライ
ス研削機(図示せず)によりフライス加工を施す。フラ
イス加工によれば面粗度の良好な加工面が得られる。フ
ライス加工が終了したら、図1(e)に示す如く、押し
ボルト33を元の位置に戻し、モールド25に対するた
わみを除去する。モールド25を保持機構から取り外す
と、図1(f)に示す如く、モールド25には面粗度が
良好でしかも被加工面の中心部が最も深いゆるやかな曲
率による凹球面が形成される。
Next, the processing method according to the present invention will be described step by step with reference to FIG. In FIG. 1 (a), first,
A mold 25 having a flat surface and grooves 25-1 at a plurality of side edge portions is fixed. In FIG. 1B, the mold 25 is set on the holding mechanism described in FIG. 2 with its surface to be processed facing up. In FIG. 1C, the center portion of the mold 25 is pushed up by the push bolt 33 to bend it. That is, when the push bolt 33 is screwed in, the mold 25 has its peripheral portion fixed by the split rings 31 and 32.
Only the center bends upward. Of course, the amount of deflection of the mold 25 can be adjusted by the push bolt 33, and is set to a desired value calculated in advance. In FIG. 1 (d), FIG.
The surface to be processed is subjected to milling with a milling grinder (not shown) in a state where the deflection is given in (c). By milling, a machined surface with good surface roughness can be obtained. After the milling is completed, the push bolt 33 is returned to its original position as shown in FIG. When the mold 25 is removed from the holding mechanism, as shown in FIG. 1 (f), the mold 25 has a concave spherical surface having good surface roughness and having a gentle curvature with the deepest center of the surface to be processed.

【0012】このようなモールド25を使用し、その凹
球面をゴム板への押圧面として図4に示すように、ゴム
板27をウェハ保持部26に貼り付ける。このようにし
て貼り付けられたゴム板は、そのウェハ載置面(上面)
がゆるやかでしかも面粗度の良好な凸球面となる。この
ようなゴム板にウェハを載置すると、ウェハ周縁部では
ゴム板との間に微小のすき間ができるので、イオン注入
処理の終了後ウェハをゴム板から取り去る時にステッキ
ングを生ずることが無くなる。一方、イオン注入処理中
は、ディスクが高速で回転してウェハは遠心力の分力で
ゴム板に密着するように押し付けられるのでゴム板とウ
ェハとの密着性が良く、所望のウェハ冷却効果を得るこ
とができる。
Using such a mold 25, a rubber plate 27 is attached to the wafer holding part 26 as shown in FIG. The rubber plate attached in this way has its wafer mounting surface (upper surface).
Is a convex spherical surface with a gentle surface roughness. When a wafer is placed on such a rubber plate, a minute gap is formed between the wafer and the rubber plate at the peripheral edge of the wafer, so that sticking does not occur when the wafer is removed from the rubber plate after the ion implantation process is completed. On the other hand, during the ion implantation process, the disk rotates at a high speed and the wafer is pressed by the centrifugal force so as to come into close contact with the rubber plate, so that the adhesion between the rubber plate and the wafer is good and the desired wafer cooling effect is obtained. Obtainable.

【0013】[0013]

【発明の効果】以上説明してきたように、本発明の加工
方法によれば、ゴム板を押圧するモールド表面をフライ
ス加工により面粗度の良好な凹球面とすることにより、
スティッキング発生が非常に少なく、しかもウェハ冷却
効果の高いゴム板の貼り付け状態を提供することができ
る。
As described above, according to the processing method of the present invention, by making the mold surface for pressing the rubber plate into a concave spherical surface having a good surface roughness by milling,
It is possible to provide a bonded state of a rubber plate that has very little sticking and has a high wafer cooling effect.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明によるモールド加工方法を説明するため
の図である。
FIG. 1 is a diagram for explaining a molding method according to the present invention.

【図2】本発明による加工方法に使用されるモールド保
持機構を示した図である。
FIG. 2 is a view showing a mold holding mechanism used in the processing method according to the present invention.

【図3】本発明が適用されるイオン注入装置を概略的に
示した図である。
FIG. 3 is a diagram schematically showing an ion implantation apparatus to which the present invention is applied.

【図4】図3に示されたディスクの一部を拡大して示し
た図である。
FIG. 4 is an enlarged view showing a part of the disc shown in FIG.

【符号の説明】[Explanation of symbols]

30 プレート 31,32 分割リング 33 押しボルト 30 plate 31, 32 split ring 33 push bolt

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 所定形状のモールドをその周縁部におい
て固定し、該モールドの被加工面とは反対側の面の中心
部に押付け力を作用させた状態で前記被加工面にフライ
ス加工を施すことにより、前記被加工面が凹球面となる
ようにしたことを特徴とするイオン注入装置におけるウ
ェハ載置用ゴム板の押付け用モールド加工方法。
1. A mold having a predetermined shape is fixed at its peripheral edge, and a milling process is performed on the surface to be processed with a pressing force being applied to the center of the surface of the mold opposite to the surface to be processed. As a result, the surface to be processed is formed into a concave spherical surface, and a molding method for pressing a rubber plate for wafer placement in an ion implantation apparatus is characterized.
JP8930891A 1991-03-29 1991-03-29 Mold processing method for pressing rubber plate for mounting wafer in ion implantation apparatus Expired - Fee Related JP2748194B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8930891A JP2748194B2 (en) 1991-03-29 1991-03-29 Mold processing method for pressing rubber plate for mounting wafer in ion implantation apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8930891A JP2748194B2 (en) 1991-03-29 1991-03-29 Mold processing method for pressing rubber plate for mounting wafer in ion implantation apparatus

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JPH05211129A true JPH05211129A (en) 1993-08-20
JP2748194B2 JP2748194B2 (en) 1998-05-06

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10177964A (en) * 1996-12-18 1998-06-30 Shin Etsu Chem Co Ltd Platen for ion implanter
US6826822B2 (en) * 2001-03-05 2004-12-07 Mosel Vitelic, Inc. Method for preparing rubber plate used in an ion implanter

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10177964A (en) * 1996-12-18 1998-06-30 Shin Etsu Chem Co Ltd Platen for ion implanter
US6826822B2 (en) * 2001-03-05 2004-12-07 Mosel Vitelic, Inc. Method for preparing rubber plate used in an ion implanter

Also Published As

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