JPH05203100A - Gas supplying device - Google Patents

Abstract

PURPOSE:To provide a gas supplying device provided with a residual gas replacing device for replacing corrosive gas or the like, left in the inside of a conveying pipe, with inert gas, in the gas supplying device of corrosive or harmful gas or the like used in a manufacturing device of semiconductor manufacturing process or the like. CONSTITUTION:A gas supplying device is constituted of input and output valves 1, 3 of cutting off a conveying pipe 1 for corrosion gas F, ejector 4 connected to a conveying pipe 17 between the input and output valves 1, 3 and a purge valve 6 for supplying inert gas. The inert gas is used as operating fluid of the ejector 4.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a gas supply device used in an industrial manufacturing apparatus such as a semiconductor manufacturing apparatus, and more particularly to a gas supply apparatus including a replacement device for residual gas in a pipe. Is.

[0002]

2. Description of the Related Art Conventionally, corrosive gases have been used for etching in photoresist processing in semiconductor manufacturing processes. Photoresist processing (photoresist application, exposure,
Since development and etching) are repeated a plurality of times in the semiconductor manufacturing process, a gas supply device for supplying a corrosive gas as needed is used in the actual semiconductor manufacturing process. In recent years, as the degree of integration of semiconductors has increased and the precision has increased, it has been desired to accurately control the supply amount of corrosive gas used in etching and the like. Further, due to the demand for shortening the manufacturing process time, demands for timing and speed have become strict.

However, in the corrosive gas supply device, if the corrosive gas remains in the pipe after the corrosive gas is once supplied and is left until the next supply of the corrosive gas, the remaining corrosive gas remains. The metal or the like inside the pipe is corroded by the corrosive gas, and when the corrosive gas is supplied next time, impurities may be mixed in the corrosive gas, which may adversely affect the semiconductor.

On the other hand, in the semiconductor manufacturing process, a plurality of corrosive gases are used. In this case, generally, a manifold type valve is used to miniaturize the gas supply device. .. At this time, the residual gas replacement device for replacing the residual gas in the block manifold is
It is often done to combine two devices. However, in this case, if the corrosive gas used last time remains in the block manifold, it may be mixed with the next gas even if it is a small amount depending on the type of gas, and the combustion or explosion due to the reactive gas may occur. There was a risk of this occurring. Even if no explosion occurs, the reaction product may become an impurity as particles, which may adversely affect the semiconductor manufacturing process.

Therefore, in the corrosive gas supply device, after the supply of a certain amount of corrosive gas, the corrosive gas remaining inside the pipe, block manifold, etc. is converted into an inert gas such as nitrogen gas. Substitution is being done. As a conventional method of replacing residual corrosive gas,
(1) Method of drawing residual corrosive gas with a vacuum pump,
(2) A method is known in which an inert gas is forced to flow in and residual corrosive gas is pushed out.

[0006]

However, in the method (1) described above, the vacuum pump is positioned away from the pipe or the like in which the corrosive gas remains, and the inside of the pipe or the like is efficiently evacuated. At the same time, the corrosive gas generally has a strong adhesion to the metal, so that the corrosive gas remaining in close contact with the metal flat surface such as inside the pipe cannot be completely removed.

[0007] It is inappropriate to arrange the vacuum pump in the vicinity of the gas supply device because of problems in maintenance management and space. Normally, the vacuum pump is arranged at a position away from the gas supply device, so that the inside of the vacuum pump is corroded. It is connected by a pipe to a pipe or the like where the volatile gas remains. In that case, since the pipe is long, the exhaust resistance is increased, it is difficult to evacuate the inside of the pipe and the like, and the remaining corrosive gas cannot be completely removed. Further, when the corrosive gas is sucked by the vacuum pump, the corrosive gas comes into contact with a pipe or the like that is sucked and conveyed in a high concentration, so that the pipe or the like is corroded.

In the above method (2), it takes too much time to dilute the residual gas. 2 kg / cm
^When nitrogen gas was pushed into a pipe or the like at a pressure of ² , it took about 1 hour to dilute it to 0.05 ppm or less. For this reason, the time required for the semiconductor manufacturing process is lengthened and the production efficiency is deteriorated.

On the other hand, in recent years, for example, in the manufacturing process of semiconductors, it has been required to supply a small amount of corrosive gas or the like at a flow rate with an accuracy of 1% or less, and the requirement for accuracy has become more severe. Therefore, a flow rate control valve having high accuracy and high responsiveness is used. And, in the flow control valve etc. for precisely controlling the corrosive gas supply amount,
As a mass flow sensor that measures flow mass with high accuracy and high responsiveness, a pair of self-heating type temperature sensors with corrosive gas flowing inside a thin conduit and large temperature coefficients on the upstream and downstream sides of the conduit respectively. Is used to form a heat-sensitive coil that is wound around, form a bridge circuit with each heat-sensitive coil, control the temperature of the heat-sensitive coil to a constant value, and calculate the mass flow rate of corrosive gas from the potential difference between the bridge circuits. ..

The conduit used at this time is, for example,
It is a SUS316 tube having an inner diameter of 0.5 mm and a length of 20 mm. The small inner diameter is for measuring small amounts of fluid gas. And on the upstream side and the downstream side of the conduit,
Two heat-sensitive coils are formed by winding a heat-sensitive resistance wire having a diameter of 25 μm for 70 turns. The heat-sensitive resistance wire is made of a material having a large temperature coefficient such as iron or nickel alloy.
The heat sensitive coil is bonded to the conduit with UV curable resin or the like to form a sensor unit.

Such a flow control valve is also widely used in a corrosive gas supply device of a semiconductor manufacturing apparatus, and it is difficult to completely eliminate the corrosive gas remaining inside such a narrow conduit. there were. Furthermore, when the inside of the conduit is corroded by the corrosive gas that remains, the accuracy of the mass flow sensor deteriorates, and the corrosive gas cannot be supplied with high accuracy, which significantly deteriorates the yield of the semiconductor manufacturing process. It was

[0012]

In order to achieve this object, the gas supply device of the present invention has the following configuration. (1) The gas supply device includes a carrier pipe for the supply gas, a first on-off valve and a second on-off valve on the carrier pipe for shutting off the flow of the supply gas, and among the first and second on-off valves. A replacement gas supply means for supplying a replacement gas to the carrier gas supply tube in the middle, and an exhaust means for depressurizing the supply gas in the carrier gas transfer tube, which is also intermediate between the first and second on-off valves,
A gas supply device comprising a residual gas replacement device for replacing the supply gas remaining in the transfer pipe with a replacement gas after shutting off the first and second on-off valves, wherein the exhaust means is an ejector. It is characterized in that it is located near the pipe and the working fluid of the ejector is the replacement gas.

(2) The gas supply device includes a block manifold connecting a plurality of carry-in pipes into which a plurality of supply gases flow in and a carry-out pipe from which a plurality of supply gases flow out, and the supply gas and the like on the carry-in pipeline. A plurality of first on-off valves for shutting off the inflow of the gas, a second on-off valve for shutting off the outflow of the supply gas on the unloading pipe, and inside the loading pipe, the unloading pipe and the block manifold connected to the block manifold. A replacement gas supply means for supplying a replacement gas and an exhaust means for depressurizing the supply gas in the carry-in pipe, the carry-out pipe and the block manifold, which is also located between the first and second on-off valves, are provided. (2) A gas supply device comprising a residual gas replacement device for replacing the supply gas remaining in the carry-in pipe, the carry-out pipe, and the block manifold with a replacement gas after shutting off the on-off valve. There together is provided at one end of the block manifold, exhaust means is provided at the other end of the block manifold.

(3) In the above (2), the exhaust means is an ejector located in the vicinity of the block manifold, and the working fluid of the ejector is the replacement gas. There is.

(4) According to the above (1) to (3), a flow rate for controlling the flow rate of the supply gas on the transfer pipeline between the first on-off valve and the second on-off valve. A control valve is provided.

[0016]

The carrier pipe of the gas supply device of the present invention having the above-mentioned structure carries the supply gas. Further, the first on-off valve and the second on-off valve are on the transfer pipeline and shut off the flow of the supply gas. Further, the replacement gas supply means is located between the first and second on-off valves and supplies the replacement gas to the supply gas transport pipe. The exhaust means is also located in the middle of the first and second on-off valves and in the vicinity of the carrier pipe to reduce the pressure of the supply gas in the carrier pipe.

By combining the above operations, the residual gas replacement device replaces the supply gas remaining in the carrier pipe with the replacement gas after shutting off the first and second on-off valves. As a result, the gas supply device equipped with the residual gas replacement device can efficiently replace the remaining corrosive gas with the inert gas even when the corrosive gas is repeatedly supplied, and the corrosive gas with high purity can be obtained. Can be efficiently supplied to the semiconductor manufacturing process.

The ejector as the exhaust means is compact, and the entire apparatus can be miniaturized. Further, since the inert gas which is the replacement gas is used as the working fluid, it is not necessary to separately provide the working fluid from the tank or the like. Also, when the corrosive gas that is the supply gas is sucked in, it must be exhausted to an external tank.
Since it is mixed with the inert gas in the ejector, it does not corrode the inside of the exhaust pipe or the like.

The block manifold of the gas supply device is
A plurality of carry-in pipes through which a plurality of supply gases flow in and a carry-out pipe through which a plurality of supply gas flow out are connected. Further, the plurality of first on-off valves are on the carry-in pipeline and block the inflow of the supply gas and the like. Further, the second on-off valve is on the carry-out pipe line and blocks the outflow of the supply gas.

By the combination of the above operations, an arbitrary supply gas can be supplied to the block manifold, and the gas supply device can selectively supply the arbitrary gas to the semiconductor manufacturing process. The replacement gas supply means is connected to the block manifold to supply the replacement gas into the carry-in pipe, the carry-out pipe, and the block manifold. The exhaust means is also located between the first and second opening / closing valves and reduces the pressure of the supply gas in the carry-in pipe, the carry-out pipe and the block manifold.

By combining the above operations, the residual gas replacement device replaces the supply gas remaining in the carry-in pipe, the carry-out pipe and the block manifold with the replacement gas after shutting off the first and second on-off valves. Accordingly, the gas supply device including the residual gas replacement device can efficiently replace the remaining corrosive gas with the inert gas even when the corrosive gas is repeatedly supplied.

Particularly, since the supply means is provided at one end of the block manifold and the exhaust means is provided at the other end of the block manifold, the corrosive gas in the block manifold is replaced with the inert gas in a short time. Therefore, the total time of the semiconductor manufacturing process can be shortened.

The ejector located at one end of the manifold as the pressure reducing means is compact, and the entire apparatus can be miniaturized. Further, since the inert gas which is the replacement gas is used as the working fluid, it is not necessary to separately provide the working fluid from the tank or the like. Also, when the corrosive gas that is the supply gas is decompressed, it must be exhausted to an external tank, but since the corrosive gas is mixed with the inert gas in the ejector, the inside of the exhaust pipe etc. Will not corrode.

The flow control valve is provided on the transfer conduit between the first on-off valve and the second on-off valve and controls the flow rate of the supply gas. In the flow rate sensor installed in the flow rate control valve, a thin pipe is used to measure the flow rate with high accuracy and high response speed. However, since the gas supply device equipped with the residual gas replacement device can completely eliminate the corrosive gas etc. remaining in the thin pipe, the metal etc. in the pipe of the flow sensor will not be corroded. Responsive and can supply corrosive gas.

[0025]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A gas supply apparatus as an embodiment of the present invention will be described below with reference to the drawings. Figure 1
It is a circuit diagram which shows the structure of a gas supply apparatus. In order to supply a constant amount of the corrosive gas F by measuring the flow rate of the input valve 2 that is the first opening / closing valve and the corrosive gas F to the supply gas carrier pipe 1 that carries the corrosive gas F that is the supply gas. The flow control valve 5 and the output valve 3 which is the second opening / closing valve are connected in series.
A transport pipe 17 between the input valve 2 and the output valve 3 is provided with an ejector 4, which is a supply gas exhaust unit, via an ejector valve 7.
Further, an inert gas tank (not shown) which stores an inert gas as a replacement gas is connected via the purge valve 6.

An embodiment embodying this circuit diagram is shown in FIG. 2B is a front view, FIG. 2A is a plan view, and FIG. 2C is a side view. Furthermore, those components are shown in an exploded perspective view according to FIG. Corrosive gas F
An input joint 8 is attached to the end of the carrier pipe 1 for carrying the. The other end of the carrier pipe 1 is connected to the block manifold body 13. The input valve 2 is mounted on the block manifold body 13.

A flow control valve 5 is attached to the opposite side of the block manifold body 13 to which the transfer pipe 1 is connected. The output block 1 is provided at the other end of the flow control valve 5.
4 is attached. The output valve 3 is mounted on the output block 14. The transfer pipe 1 is attached to the output block 14 on the side opposite to the flow control valve 5.
An output joint 9 is attached to the other end of the carrier pipe 1.

A base plate 12 is attached to the lower end of the block manifold body 13. The block manifold body 13 and the base plate 12 are integrated to form a block manifold. At one end of the base plate 12, the ejector joint 1
The ejector 4 is connected via 1. Further, an inert gas tank is connected to the other end of the base plate 12 via an inert gas joint 10. An ejector valve 7 and a purge valve 6 are attached to the side surface of the block manifold body 13.

Next, the inflow and exhaust paths of each gas will be described. The corrosive gas F is transferred from the input joint 8 to the carrier pipe 1
To the input port of the input valve 2 through a hole inside the block manifold body 13. The output port of the input valve 2 is connected to the transfer pipe 17, and the transfer pipe 17 is connected to the input port of the flow control valve 5, the input port of the ejector valve 7, and the output port of the purge valve 7. The output port of the flow control valve 5 is connected to the input port of the output valve 3 through a hole provided inside the output block 14. The output port of the output valve 3 is connected to the output joint 9 through the carrier pipe 1 through a hole provided inside the output block 14. The output joint 9 is connected to an etching processing apparatus in a semiconductor manufacturing process.

The output port of the ejector valve 7 is connected to the ejector 4 through the hole provided in the base plate 12 and the ejector joint 11. The input port of the purge valve 6 is connected to the inert gas tank through the hole provided inside the base plate 12 and the inert gas joint 10. Further, an inert gas is connected to the ejector 4 as a working fluid for the ejector so that the inert gas can flow into the ejector 4.

The structure of the ejector 4 is shown in FIG. The input port 28 of the ejector 4 is connected to the ejector joint 11. The working fluid input port 27 of the ejector 4 is connected to an inert gas tank. Working fluid input port 2
7 communicates with the valve chamber 26. In the valve chamber 26, the valve seat 2
3 is provided, and the valve element 21 is in contact with the valve seat 23. The valve body 21 is fitted and fixed to one end of the movable iron core 20. The movable iron core uses the return spring 22 to move the valve body 21.
Is urged in a direction to abut. The movable iron core 20 is fitted in the hollow portion of the coil 19 so as to be linearly movable.

The central hole of the valve seat 23 is connected to the suction part 24 via the nozzle 25 and to the discharge part 29. on the other hand,
The input port 28 of the ejector 4 is connected to the suction unit 24.

Before explaining the operation of the entire apparatus, the operation of the ejector 4 having the above structure will be described. When the coil 19 is excited, the fixed iron core (not shown) moves to the movable iron core 20.
Move upwards. As a result, the valve body 21 becomes the valve seat 2
Separated from 3. Then, the inert gas N that is the working fluid flows into the nozzle 25 through the working fluid input port 27, the valve chamber 26, and the valve seat 23. The nozzle 25 increases the flow rate by decreasing the pressure, and the inert gas N is blown out from the suction section 24 toward the discharge section 29 at a high flow rate.

Although generated by this rapid flow of the inert gas N, the corrosive gas F is sucked by the negative pressure around the suction portion 24 and the viscosity of the inert gas N and the corrosive gas F, and the working fluid is drawn. And is discharged from the discharge unit 29. The discharged gas is stored in the exhaust tank through the pipe.
At this time, the corrosive gas F is an inert gas N which is a working fluid.
Since it is discharged after the concentration is diluted by, the inside of the exhaust pipe and the exhaust treatment device is less likely to corrode.

Next, the structure of the flow control valve 5 will be described with reference to FIG. The flow rate control valve 5 controls the flow rate by opening and closing the valve 35 while accurately measuring the mass flow rate. The flow control valve 5 has a main passage 39 and a flow dividing passage 40.
Of these, the mass flow rate is measured using the conduit 32 provided in the diversion passage 40. In the main passage 39, the diversion passage 40
A throttling member 36 is provided to allow the corrosive gas F to flow therethrough.

That is, as a mass flow rate sensor for measuring the mass flow rate with high accuracy and high responsiveness, the corrosive gas F is flown inside the narrow conduit 32, and the temperature coefficient becomes large on the upstream side and the downstream side of the conduit 32, respectively. A thermosensitive coil 31 around which a pair of self-heating type temperature measuring elements are wound is formed, a bridge circuit is formed by each thermosensitive coil 31, and a temperature control circuit 37 controls the temperature of the thermosensitive coil 31 to a constant value to generate a corrosive gas. The mass flow rate of F is calculated from the potential difference between the bridge circuits, the drive control circuit 38 changes the excitation of the coil 34, and the valve body 33
It is used to control the flow rate by driving the.

The conduit 32 used at this time is, for example, a SUS316 tube having an inner diameter of 0.5 mm and a length of 20 mm. The small inner diameter is for measuring small amounts of fluid gas. Two heat-sensitive coils 31 are formed by winding a heat-sensitive resistance wire having a diameter of 25 μm for 70 turns on the upstream side and the downstream side of the conduit. The heat-sensitive resistance wire is made of a material having a large temperature coefficient such as iron or nickel alloy. The heat sensitive coil is bonded to the conduit with UV curable resin or the like to form a sensor unit.

Next, the operation of the gas supply device having the above structure will be described. The corrosive gas F flows from the corrosive gas tank (not shown) into the transfer pipe 1 via the input joint 8, passes through the hole inside the block manifold body 13, and flows into the input port of the input valve 2. When the input valve 2 opens, the input port and the output port of the input valve 2 communicate. The corrosive gas F exiting the output port of the input valve 2 flows into the input port of the flow control valve 5.

The corrosive gas F flowing into the flow control valve 5 is
The main passage 39 and the flow dividing passage 40 flow separately, and join again. The corrosive gas F flowing through the flow dividing passage 40 is heated by the heat sensitive coil 31 around which a pair of self-heating temperature measuring elements each having a large temperature coefficient are wound on the upstream side and the downstream side of the conduit 32. Here, the current control circuit 37 causes the thermal coil 3 to
The temperature of 1 is controlled to a constant value, the mass flow rate of the corrosive gas F is calculated from the potential difference between the bridge circuits formed by the heat sensitive coil 31, and the drive control circuit 38 causes the coil 3 to flow.
The excitation of No. 4 is changed to drive the valve element 33 to control the flow rate.

The corrosive gas F exiting the output port of the flow control valve 5 flows into the input port of the output valve 3 through the hole provided inside the output block 14. Here, since the output valve 3 is opened, the input port and the output port of the output valve 3 are in communication with each other. The corrosive gas F exiting the output port of the output valve 3 passes through the hole provided inside the output block 14 and flows out of the output joint 9 via the carrier pipe 1. The output joint 9 is connected to an etching processing device or the like in the semiconductor manufacturing process, and a predetermined amount of corrosive gas F
Is supplied to an etching processing device or the like. When a predetermined amount of corrosive gas F is sent to the etching apparatus or the like by the flow rate control valve 5, the output valve 3 and the input valve 2 are closed. At this time, the corrosive gas F also enters inside the conduit 31 of the flow control valve 5.
Remains.

Next, the purge valve 6 is opened to allow the inert gas N to flow into the carrier pipe 17, and then the purge valve is closed and the ejector valve is opened to excite the ejector 4 to corrode it. Aspirate the gas F. That is, when the ejector valve 7 and the ejector 4 are excited, the inert gas N that is the working fluid flows into the ejector 4, sucks the corrosive gas F, and discharges it as a mixed gas. Here, since the suction by the ejector 4 and the inflow of the inert gas N by the purge valve 6 are alternately performed, the corrosive gas F adsorbed on the inner wall surface of the conduit 32 of the flow rate control valve 5 is not absorbed. Since the ejector 4 can suck the air while blowing it away with the active gas N, it is possible to efficiently remove the residual gas.

FIG. 10 shows the effect. That is, the solid line shows the case where only the inert gas N is simply purged without performing the suction by the ejector 4. The residual concentration of the corrosive gas F after 1 minute is still 100 ppm or more, and the background value of the inert gas N is 0.05.
It also takes 36.7 minutes to reach ppm. The dotted line shows that the inert gas N described in this example was filled for 8 seconds and ejector suction was alternately performed for 2 seconds 6 times. The residual concentration of the corrosive gas F after 1 minute was 0. 6
It is 8 ppm, which is a very short time. Further, the time until the background value of the inert gas N becomes 0.05 ppm is shortened to 12.8 minutes. Thus, by providing the ejector 4 in the vicinity of the transfer pipe 17 and alternately performing the purging of the inert gas N and the suction by the ejector 4, the residual gas can be efficiently removed in a short time,
The efficiency of the semiconductor manufacturing process can be improved.

In the above embodiment, the case where the purging with the inert gas N and the suction of the residual gas by the ejector 4 are performed alternately has been described, but the purging and the suction may be performed simultaneously.

When a vacuum pump is used, when the corrosive gas F is first sucked, the inside of the exhaust pipe is exposed to the corrosive gas F having a high concentration, and the pipe is corroded. Since the concentration of the corrosive gas F is diluted by the inert gas N and is discharged, it is possible to first perform the suction operation.

Next, FIG. 5 to FIG. 8 for the second embodiment.
Will be explained. 6 to 8 show an embodiment in which a device for supplying the corrosive gases FA to FE to the block manifold is embodied. 6 is a front view, FIG. 7 is a plan view, and FIG. 8 is a side view. In the supply gas carrier pipes 1A to 1E for carrying the corrosive gases FA to FE, the input valves 2A to 2E, which are the first opening / closing valves, and the flow rates of the corrosive gases FA to FE are measured to measure a constant amount of corrosive gas FA. To flow control valves 5A to 5E for supplying FE and an output valve 3 which is a second opening / closing valve
A to 3E are connected in series.

The transfer pipes 17A to 17E between the input valves 1A to 1E and the output valves 2A to 2E are connected to the ejector valves 7A to 7E.
An ejector 4 which is a supply gas suction means is connected via 7E, and an inert gas tank (not shown) which stores an inert gas which is a replacement gas is connected via purge valves 6A to 6E. These are basically a combination of those shown in FIG. 1 in parallel, and a detailed description thereof will be omitted, and different points will be described in detail. The ejector 4 is
It is attached to suck the corrosive gas F remaining in the portions of the carrier pipes 17A to 17E. This indicates that even if a plurality of types of corrosive gases FA to FE are used, only one ejector 4 is required.

FIG. 5 shows a circuit diagram of a gas supply device for supplying a plurality of corrosive gases FA to FE through a common port formed in the block manifold. The plural corrosive gases supplied to the base plate 43 are mixed and supplied to the etching process.

In FIG. 5, another ejector 41 is provided.
Is attached to one end of the base plate 43 of the block manifold. Further, a purge valve 42 for purging the inert gas N is provided at the other end of the base plate 43.
Is attached. This shows a method of eliminating the corrosive gas F remaining inside the block manifold when the block manifold is used.

At this time, (1) the case where the purge valve 42 and the ejector 41 are attached close to the central portion or one end of the base plate 43, and (2) the purge valve 42 is attached to one end of the base plate 43 and the other end is attached. The time required to reduce the concentration of the corrosive gas F remaining inside the base plate 43 to less than 0.05 ppm is nearly double that when the ejector 41 is attached to. That is, it took about 20 minutes for (1) and about 12 minutes for (2).
Therefore, when a block manifold is used, if the purge valve 42 is attached to one end of the base plate 43 and the ejector 41 is attached to the other end of the base plate 43, the corrosive gas F that remains can be efficiently removed.

[0050]

As is apparent from the above description, according to the gas supply apparatus of the present invention, the ejector 4, which is the exhaust means, is mounted in the vicinity of the carrier pipe 17, so that the supply gas remaining in the carrier pipe or the like. Efficiently eliminates corrosive gas,
It can be replaced with an inert gas.

Further, since the inert gas which is the replacement gas is used as the working fluid of the ejector, no extra piping is required and the apparatus can be downsized. Furthermore, since the corrosive gas is diluted with the inert gas and discharged, the corrosion of the discharge pipe and the like is prevented.

Further, in the gas supply device for supplying a plurality of corrosive gases by using a block manifold, a supply means for supplying an inert gas as a replacement gas is provided at one end of the block manifold, and an exhaust means is provided. Since a certain ejector is provided at the other end of the block manifold, the corrosive gas F remaining in the block manifold can be efficiently removed and replaced with an inert gas.

When the flow control valve for controlling the flow rate of the supply gas is attached to the carrier pipe, even if the corrosive gas remains inside the conduit of the flow sensor, the gas supply device of the present invention can The corrosive gas remaining in the narrow conduit can be efficiently replaced with the inert gas.

[Brief description of drawings]

FIG. 1 is a circuit diagram showing a configuration of a gas supply device that is an embodiment of the present invention.

FIG. 2 is a trihedral view showing a specific configuration of a gas supply device.

FIG. 3 is an exploded perspective view showing a specific configuration of a gas supply device.

FIG. 4 is a cross-sectional view showing a configuration of an ejector.

FIG. 5 is a circuit diagram showing a configuration of a block manifold type mixing gas supply device.

FIG. 6 is a front view showing a specific configuration of a block manifold type gas supply device.

FIG. 7 is a plan view showing a specific configuration of a block manifold type gas supply device.

FIG. 8 is a side view showing a specific configuration of a block manifold type gas supply device.

FIG. 9 is a cross-sectional view showing the configuration of a flow control valve.

FIG. 10 is a data diagram showing experimental results.

[Explanation of symbols]

 F Corrosive gas N Inert gas 1 Transfer pipe 2 Input valve 3 Output valve 4 Ejector 5 Flow control valve 6 Purge valve 7 Ejector valve 13 Block manifold body 17 Transfer pipe 43 Base plate

Front Page Continuation (72) Inventor Kenichi Goto Oma Kita Sotoyama, Aichi Prefecture, Kitayama 3005 C-Kade Co., Ltd. (72) Inventor Hiroshi Itou Komaki Aichi Prefectural Kitayama, Hayasaki 3005 CK Co., Ltd. ( 72) Inventor Akihiro Kojima 3005 Hayasaki, Kita Sotoyama, Komaki City, Aichi Prefecture CKD Corporation

Claims (4)

[Claims] 1. A supply pipe for supplying a supply gas, a first on-off valve and a second on-off valve on a transfer pipe for shutting off the flow of the supply gas, and an intermediate supply between the first and second on-off valves. A replacement gas supply unit for supplying a replacement gas to the gas transfer pipe, and an exhaust unit located between the first and second on-off valves for depressurizing the supply gas in the transfer pipe for the supply gas; A gas supply device comprising a residual gas replacement device for replacing the supply gas remaining in the transfer pipe with a replacement gas after shutting off the second on-off valve, wherein the exhaust means is an ejector and is located in the vicinity of the transfer pipe. In addition, the working fluid of the ejector is the replacement gas. 2. A block manifold connecting a plurality of carry-in pipes into which a plurality of supply gases flow in and a carry-out pipe from which a plurality of supply gas flows out; Of the first opening / closing valve, a second opening / closing valve on the unloading conduit for blocking the outflow of the supply gas, and a replacement gas connected to the block manifold to supply the replacement gas into the loading pipe, the unloading pipe, and the block manifold The first and second on-off valves are shut off by having a gas supply means and an exhaust means which is also in the middle of the first and second on-off valves and which decompresses the supply gas in the carry-in pipe, the carry-out pipe and the block manifold. Then, in the gas supply device provided with a residual gas replacement device that replaces the supply gas remaining in the carry-in pipe, the carry-out pipe, and the block manifold with a replacement gas, the supplying means comprises: Together provided at one end portion of the hold, the gas supply device, characterized in that said exhaust means is provided at the other end of the block manifold. 3. The gas supply device according to claim 2, wherein the exhaust means is an ejector located near the block manifold, and a working fluid of the ejector is the replacement gas. .. 4. The flow control valve according to claim 1, wherein a flow rate control valve for controlling a flow rate of the supply gas is provided on a transfer pipeline between the first on-off valve and the second on-off valve. A gas supply device characterized by being provided.