JPH05198865A - Substrate for ink jet head, ink jet head using same and ink jet apparatus equipped with the head - Google Patents

Abstract

PURPOSE:To obtain an ink jet head excellent in resistance to cavitation shock, mechanical durability, electrochemical stability, heat resistance, etc., by constituting a heat generating resistor of non-single crystal substance containing Ir and one specified element or Ir and two specified elements by a specified composition ratio. CONSTITUTION:In order to gush ink by directly giving heat energy to the ink, a heat generating resistor, which generates heat energy by applying a current, contains Ir and Cr by the following composition ratio; 24 atomic %<Ir<68 atomic % and 32 atomic %<Cr<76 atomic %. As for an ink jet head, an electricity-heat converting body having a heat generating resistor layer 103 having a specified shape and electrodes 104, 105 is formed on a retaining body formed by arranging a lower layer 102 on the surface of a substrate 101. A protective film 106 covering the electrodes 104, 105 of the electricity-heat converting body is laminated, and a plate provided with trenches is bonded to the layer 106, in which plate a passage 111 to communicate with ink gushing outlets 108 are formed.

Description

Detailed Description of the Invention

[0001]

FIELD OF THE INVENTION The present invention relates to resistance to cavitation impact, resistance to cavitation erosion, chemical stability, electrochemical stability, oxidation resistance, dissolution resistance, heat resistance, thermal shock resistance, and mechanical properties. Inkjet head equipped with a heat-generating resistor excellent in dynamic durability,
The present invention relates to an inkjet head substrate and an inkjet device for forming the head. A typical example of the inkjet head is one that includes an electrothermal converter having a heating resistor that is generated by energizing the heat energy used to eject the ink by directly applying the heat energy to the ink on the heat acting surface. Can be given as a typical example. The electrothermal converter has low power consumption and excellent responsiveness to an input signal.

[0002]

2. Description of the Related Art An ink jet system utilizing heat energy described in US Pat. No. 4,723,129, US Pat. No. 4,740,796, etc.
High-speed, high-density, high-definition and high-quality recording is possible, and it is suitable for colorization and compactness, and has been attracting attention recently. In a typical example of an apparatus using this system, since the ink that is a recording liquid is ejected by using thermal energy, there is a heat acting portion that applies heat to the ink. That is, a heating resistor having a heat acting portion is provided corresponding to the ink path, the heat energy generated by the heating resistor is used to rapidly heat the ink to foam, and the ink is ejected based on this foaming. To do.

From the viewpoint of applying heat to an object, the heat acting portion has a portion that is similar to the structure of a conventional so-called thermal head, but the heat acting portion is in direct contact with the ink. The thermal action part is exposed to mechanical shock and, in some cases, erosion due to cavitation due to repeated foaming and defoaming of ink, and the thermal action is 1000 ^{-1 in} an extremely short time of the order of 10 ^-1 to 10 microseconds. The fundamental technology of the thermal head is significantly different from that of the thermal head in that it is exposed to temperature rises and falls near ℃. Therefore, it goes without saying that the thermal head technology cannot be directly applied to the inkjet technology. That is, the thermal head technology and the inkjet technology cannot be discussed in the same row.

By the way, the heat acting portion of the ink jet head is exposed to the harsh environment as described above.
_{In general} , an electrically insulating layer made of ₂ , SiC, Si ₃ N or the like and a cavitation resistant layer made of Ta or the like on the electrically insulating layer are provided to protect the heat acting portion from the environment of use. As a constituent material of the protective film used in such an ink jet head, for example, US Pat.
The materials described in JP-A No. 35,389, which are strong against impact and erosion due to cavitation, can be mentioned.

Separately from this, in order to reduce power consumption and enhance responsiveness to an input signal, the heat generated by the heating resistor is efficiently and promptly applied to the heat acting portion of the ink jet head. It is desired to act on the ink. Therefore, in addition to the form in which the protective film is provided, a form in which the heating resistor directly contacts the ink has been proposed in, for example, Japanese Patent Application Laid-Open No. 55-126462.

Although the ink jet head of this form is superior to the form in which the protective film is provided in terms of thermal efficiency, not only is the heating resistor exposed to impact and erosion due to cavitation, and also to rise and fall of temperature. Since the recording liquid in contact with the heating resistor has conductivity, an electric current also flows in the recording liquid, and the heating resistor is also exposed to the resulting electrochemical reaction. Therefore, various metals, alloys, metal compounds, or cermets such as Ta ₂ N, RuO ₂ which are conventionally known as materials for heat generating resistors can be used as heat generating resistors for ink jet heads of this form. Durability and stability are not always sufficient.

For the ink jet head having the above-mentioned protective film, it has been proposed that it can be practically used in terms of durability and resistance change. In either case, the protective film is formed. It is extremely difficult to completely prevent the occurrence of defects that sometimes occur, and this is a major factor in reducing the yield during mass production. Further, there is a demand for higher recording speed and higher recording density, and the number of ejection openings of the ink jet head tends to increase correspondingly, which is becoming a big problem.

Further, the above-mentioned protective film lowers the heat transfer efficiency from the heating resistor to the recording liquid, but if this heat transfer efficiency is poor, the overall power consumption required increases, and the ink jet head during driving is increased. The temperature change becomes large. This temperature change leads to a change in the volume of the droplet ejected from the ejection port, which causes a density change in the image. In addition, when the number of ejections per hour is increased in order to respond to the speeding up of recording, the power consumption of the inkjet head rises accordingly, and the temperature change increases, and the temperature change corresponds to the obtained image. This will cause a change in concentration. Further, even when the discharge ports are multi-sized with the increase in the density of the electrothermal converter, the power consumption in the inkjet head rises, and the temperature change due to this also changes the density of the obtained image according to the temperature change. Will be accompanied by. Such a problem that the obtained image has a change in density is against the demand for high quality of the recorded image, and is a problem that requires an early solution.

In order to solve such a problem, it has been earnestly desired to provide an ink jet head which is in direct contact with a heating resistor and ink and has high thermal efficiency.

[0010]

However, as described above, in the conventional form in which the ink directly contacts the heat-generating resistor, the heat-generating resistor is exposed to the impact of cavitation, erosion, and temperature rise and fall. Not only is it exposed to electrochemical reactions,
The conventional material for the heating resistor such as Ta ₂ N, RuO ₂ , HfB ₂ has a problem in durability, such as mechanical destruction, corrosion and dissolution.

The material described in US Pat. No. 4,335,389, which is strong against impact and erosion due to cavitation, is effective only when it is used as the protective film (anti-cavitation layer) as described above. It is demonstrated. However, when this material is used as a heat generating resistor that is in direct contact with ink, it may be dissolved or corroded by an electrochemical reaction, and sufficient durability cannot be obtained.

Further, for high-definition and high-quality recording, ejection stability is indispensable, and for that purpose, it is necessary that the resistance change of the heating resistor is small. JP-A-59-9
Ta and Ta-Al alloys described in Japanese Patent Publication No. 6971 are
When used as a heat-generating resistor that is in direct contact with the ink of the inkjet head, it is relatively excellent in durability in that the resistor does not break, that is, cavitation resistance. However, in terms of resistance change during repeated foaming, for example, Ta or Ta-Al alloy is not so small and not satisfactory. Furthermore, T
In a or Ta-Al alloy, the ratio M between the applied pulse voltage (V _break ) at which the resistor breaks and the foaming threshold voltage (V _th ) is not so large and the heat resistance is not so high, and the drive voltage (V _op ) There is a problem that the life of the resistor may be greatly reduced by a slight increase in That is, Ta
And Ta-Al alloy do not necessarily have sufficient resistance to an electrochemical reaction. Therefore, when used as a material of a heating resistor that is in direct contact with the ink of an inkjet head, when foaming is repeated by a large number of applied pulses, The electric resistance of the heat-generating resistor changes significantly, and the state of foaming also changes, and since the heat resistance is not so great, a small change in V _op greatly affects the life of the resistor. There is such a problem.

As described above, even if a heating resistor that is in direct contact with a recording liquid (that is, ink) is formed of a conventionally known material, resistance to impact of cavitation, resistance to erosion due to cavitation, mechanical durability, It is difficult to obtain an ink jet head or an ink jet device which can satisfy all of chemical stability, electrochemical stability, resistance stability, heat resistance, oxidation resistance, dissolution resistance and thermal shock resistance.

In particular, an ink jet head having a structure in which a heating resistor is provided so as to be in direct contact with ink, has high heat conduction efficiency, is excellent in signal responsiveness, and has sufficient durability and ejection stability. It's hard to get a.

The present inventors have made inventions that solve the various technical problems described above (International Publication WO90 / 09).
888 (hereinafter referred to as "reference 1") and WO90 / 098
87 (hereinafter referred to as "Reference 2"). That is, in these Documents 1 and 2, the present inventors have found that an Ir-Ta alloy having a specific composition range or an Ir-Ta- having a specific composition range.
It has been proposed to use an Al alloy as a material for a heating resistor of an inkjet head. These alloys are resistant to cavitation impact, cavitation erosion resistance, mechanical durability, chemical stability, electrochemical stability, resistance stability, heat resistance, oxidation resistance, melting resistance and thermal shock resistance. I am satisfied with all of my sexuality. Among them, Ir is particularly heat resistant,
It is a preferable material that easily exhibits superiority in terms of oxidation resistance and chemical stability.

In recent years, ink jet devices tend to be miniaturized for personal use, and small ink jet devices incorporating a secondary battery are commercially available. By the way, commercially available secondary batteries have a voltage of 1
It is around 0V. In an inkjet device incorporating such a secondary battery, by incorporating a predetermined converter, the voltage of about 10V of the secondary battery is doubled to 20V.
It is often used by pulling it up and down. The reason is that the width of the driving pulse (driving time) is shortened to achieve high-speed recording by high-speed driving.

On the other hand, there is a demand for further miniaturization of the ink jet device, and in this case, it is desirable to omit the use of the converter. In the case of an inkjet device without a converter, a voltage of about 10 V of the secondary battery is used as a driving voltage, and the width of the driving pulse (driving time) in order to eject the ink in a proper state due to the low driving voltage. ) Needs to be increased.

However, when driving is performed with a driving pulse having a relatively long width as described above, even the heating resistors proposed in the above-mentioned Documents 1 and 2 are not sufficient in terms of durability. I can not say. For this reason, it is desired to provide a heating resistor having sufficient durability even when the driving is performed with a driving pulse having a relatively long width.

A main object of the present invention is to solve the above-mentioned problems in the conventional ink jet head and to provide an improved ink jet head.

Other objects of the present invention are: resistance to cavitation impact, resistance to cavitation erosion, mechanical durability, chemical stability, electrochemical stability, resistance stability, heat resistance, oxidation resistance, An object of the present invention is to provide an improved inkjet head having excellent dissolution resistance and thermal shock resistance.

It is a further object of the present invention to stably and immediately respond to an on-demand signal to efficiently transfer heat energy to a recording liquid (ink) even if it is repeatedly used for a long time to eject an ink. And to provide an improved inkjet head that provides excellent recorded images.

Still another object of the present invention is to have a structure in which the heat generating resistor is in direct contact with the recording liquid and has excellent thermal conductivity.
The power consumption of the heating resistor is kept low, the temperature change of the inkjet head is extremely small, and the ink is always discharged stably even during repeated use for a long time, and the resulting image changes in density due to the temperature change of the inkjet head. It is an object of the present invention to provide an improved ink jet head that eliminates the above problems.

Another object of the present invention is to drive with a drive pulse of a relatively long width while taking advantage of the advantage of Ir which can easily exhibit superiority in terms of heat resistance, oxidation resistance, chemical stability and the like. An object of the present invention is to provide an inkjet head having a heating resistor made of a material that exhibits sufficient durability even when performing the above.

Still another object of the present invention is to provide an ink jet head substrate for forming the above ink jet head, and an ink jet apparatus having the above ink jet head.

[0025]

A substrate for an ink jet head of the present invention is a heating resistor which is generated by energizing the thermal energy which is used to directly apply thermal energy to the ink on the heat acting surface to eject the ink. In the inkjet head substrate having an electrothermal converter having a body, the heating resistor is made of a material containing at least Ir and Cr in the following composition ratios.

24 atomic% ≦ Ir ≦ 68 atomic% 32 atomic% ≦ Cr ≦ 76 atomic% In this case, the heating resistor may be made of a material containing at least Ir, Ta and Ti in the following composition ratios. Good.

46 atomic% ≤ Ir ≤ 78 atomic% 5 atomic% ≤ Ta ≤ 43 atomic% 10 atomic% ≤ Ti ≤ 38 atomic% Furthermore, the heating resistor has at least Ir, Ru and Ta in the following composition ratios. It may be composed of the contained material.

10 atomic% ≤ Ir ≤ 67 atomic% 11 atomic% ≤ Ru ≤ 58 atomic% 18 atomic% ≤ Ta ≤ 63 atomic% Furthermore, the heating resistor has at least Ir, Os and Ta in the following composition ratios. It may be composed of the contained material.

17 atomic% ≤ Ir ≤ 73 atomic% 5 atomic% ≤ Os ≤ 58 atomic% 19 atomic% ≤ Ta ≤ 60 atomic% Furthermore, the heating resistor has at least Ir, Re and Ta in the following composition ratios. It may be composed of the contained material.

39 atomic% ≤ Ir ≤ 58 atomic% 9 atomic% ≤ Re ≤ 36 atomic% 22 atomic% ≤ Ta ≤ 51 atomic% Furthermore, the heating resistor has at least Ir, Y and Al in the following composition ratios. It may be composed of the contained material.

54 atomic% ≤ Ir ≤ 85 atomic% 2 atomic% ≤ Y ≤ 18 atomic% 13 atomic% ≤ Al ≤ 30 atomic% Furthermore, the heating resistor has at least Ir, Ru and Cr in the following composition ratios. It may be composed of the contained material.

21 atomic% ≦ Ir ≦ 51 atomic% 17 atomic% ≦ Ru ≦ 42 atomic% 7 atomic% ≦ Cr ≦ 46 atomic% Furthermore, the heating resistor contains at least Pt and Ta in the following composition ratio. It may be composed of a material.

62 atomic% ≤ Pt ≤ 75 atomic% 25 atomic% ≤ Ta ≤ 38 atomic% Further, the ink jet head of the present invention is constituted by using the above-mentioned ink jet head substrate. It is configured using a head.

[0034]

The present inventors have conducted earnest research to solve the above problems in the conventional ink jet head and achieve the above object. As a result, when a heating resistor for an ink jet head is formed using a non-single crystalline substance composed of Ir and a specific one element or Ir and a specific two elements, it was found that the above object can be achieved. The present invention has been completed based on this finding. These non-single-crystal substances are amorphous substances, polycrystalline substances, or amorphous substances each containing Ir and a specific one element or Ir and a specific two elements in specific composition ratios. It is a substance in which a substance and a polycrystal substance are mixed (these are collectively referred to as "non-single crystal substance" or "alloy" hereinafter).

The present invention includes the five aspects A to E described later.

[Aspect A] Ir-Ta proposed in Document 1
It is composed of a non-single-crystal material in which Ta is replaced with another element while taking advantage of Ir, which is easy to exhibit superiority in terms of heat resistance, oxidation resistance, chemical stability, etc., over the alloy. Inkjet head having a heating resistor.

[Aspect B] Ir-Ta proposed in Reference 2
-A non-single-crystal substance in which Al is replaced with another element while taking advantage of Ir, which is likely to exhibit superiority in terms of heat resistance, oxidation resistance, chemical stability, etc., over Al alloy. An inkjet head having a configured heating resistor.

[Aspect C] Ir-Ta proposed in Reference 2
A non-single-crystal substance in which Ta is replaced with another element while taking advantage of Ir, which is likely to exhibit superiority in terms of heat resistance, oxidation resistance, chemical stability, etc., over Al alloy. An inkjet head having a configured heating resistor.

[Aspect D] Ir-Ta proposed in Reference 2
A non-Al alloy in which Al and Ta are replaced by another two elements while taking advantage of the advantage of Ir which can easily exhibit superiority in terms of heat resistance, oxidation resistance, chemical stability, etc. An ink jet head having a heating resistor made of a single crystal material.

[Aspect E] Ir-Ta proposed in Reference 1
Ir, which tends to show superiority in terms of heat resistance, oxidation resistance, chemical stability, etc., to the alloy, is replaced with a platinum group element to which Ir belongs and Ta is replaced with another element. An ink jet head having a heating resistor made of a crystalline substance.

The above-mentioned aspects A to E are more specifically as described later.

[Aspect A] The heating resistor of the ink jet head is made of a material containing Ir and Cr in specific composition ratios. Iridium (Ir) is selected from the viewpoint of a substance that is highly heat-resistant and oxidation-resistant and chemically stable, and chromium is a substance that provides an oxide that has mechanical strength and is highly solvent-soluble. (Cr) is selected.

[Aspect B-a] The heating resistor of the ink jet head is made of a material containing Ir, Ta and Ti in specific composition ratios. Iridium (Ir) is selected from the standpoint of a substance that is rich in heat resistance and oxidation resistance and is chemically stable, and tantalum (Tr) is selected from the viewpoint of a substance that forms an alloy with another metal element to produce strength and electric resistance.
a) is selected, and titanium (Ti) is selected in terms of a material that provides an oxide that is rich in processability and adhesion, and is also highly resistant to solvent dissolution.

[Aspect Bb] The heating resistor of the ink jet head is made of a material containing Ir, Ta and Ru in specific composition ratios. Iridium (Ir) is selected from the viewpoint of a substance that is rich in heat resistance and oxidation resistance and chemically stable, and is rich in oxidation resistance and chemically stable, forming an alloy with other metal elements and strength. Ruthenium (Ru) is selected from the standpoint of the substance that produces the oxide, and tantalum (Ta) is selected from the standpoint of the substance that provides an oxide rich in heat resistance and solvent solubility.

[Mode B-c] The heating resistor of the ink jet head is made of a material containing Ir, Ta and Os in specific composition ratios. Iridium (Ir) is selected from the viewpoint of a substance that is rich in heat resistance and oxidation resistance and chemically stable, and is chemically stable and rich in heat resistance, and forms an alloy with other metal elements to make strength and electric resistance. Osmium (Os) is selected from the standpoint of the substance that produces oxygen, and tantalum (Ta) is selected from the standpoint of the substance that provides an oxide having mechanical strength and rich in solvent resistance.

[Mode B-d] The heating resistor of the ink jet head is made of a material containing Ir, Ta and Re in specific composition ratios. Iridium (Ir) is selected from the viewpoint of a substance that is rich in heat resistance and oxidation resistance and is chemically stable, and is rich in heat resistance and forms an alloy with other metal elements to produce strength and electric resistance. , Rhenium (Re) is selected, and tantalum (Ta) is selected from the viewpoint of a substance having mechanical strength and providing an oxide rich in solvent solubility.

[Aspect C] The heating resistor of the ink jet head is made of a material containing Ir, Al and Y in specific composition ratios. Iridium (Ir) is selected from the viewpoint of a material that is highly heat resistant and oxidation resistant and chemically stable, and yttrium (Y) is selected from the viewpoint of a material that forms an alloy with other metal elements and produces strength and electric resistance. Is selected, and aluminum (Al) is selected from the viewpoint of a substance that provides an oxide that is rich in workability and adhesion and is also highly resistant to solvent dissolution.

[Aspect D] The heating resistor of the ink jet head is made of a material containing Ir, Ru and Cr in specific composition ratios. Iridium (Ir) is selected from the viewpoint of a substance that is rich in heat resistance and oxidation resistance and chemically stable, and is rich in oxidation resistance and chemically stable, forming an alloy with other metal elements and strength. Ruthenium (Ru) is selected from the viewpoint of a substance that produces a metal, and chromium (Cr) is selected from the viewpoint of a substance that provides an oxide rich in heat resistance and solvent solubility.

[Embodiment E] The heating resistor of the ink jet head is made of a material containing Pt and Ta in specific composition ratios. Platinum (Pt) of the platinum group is selected from the viewpoint of a substance which is rich in heat resistance and oxidation resistance and chemically stable, and which has mechanical strength and is a substance which gives an oxide rich in solvent resistance. From the perspective of tantalum (T
a) is selected.

The present invention, which includes the above-mentioned aspects A to E, is
The present inventors have conducted experiments and have completed the experiments based on the findings obtained through these experiments. The experiments conducted by the present inventors are as described later.

The present inventors have prepared a plurality of samples of the above non-single crystalline material by the sputtering method. For each sample, a sputtering apparatus shown in FIG. 6 (trade name: sputtering apparatus CFS-8EP, manufactured by Tokuda Manufacturing Co., Ltd.) was used to form a thermally-oxidized SiO ₂ film having a thickness of 2.5 μm on the Si single crystal substrate and the surface. It was manufactured by forming a film on each of the Si single crystal substrates.

The sputtering apparatus shown in FIG. 6 has a film forming chamber 601. In the film forming chamber 601, a substrate holder 602 for holding a substrate 603 on which a film forming process is performed is provided. The substrate holder 602 has a built-in heater (not shown) for heating the substrate 603. The substrate holder 602 is supported by a rotary shaft 608 extending from a drive motor (not shown) installed outside the system, and is designed to be vertically movable and rotatable.

A target holder 605 for holding a target for film formation is installed at a position facing the substrate 603 in the film formation chamber 601. Target holder 60
The target 606 placed on the surface of No. 5 is a plate of a specific element having a purity of 99.9% by weight or more. A target 607 and a target 620 are arranged on the target 606.
It is composed of a sheet of a specific element having a purity of 9.9% by weight or more. Target 607 and target 620
As shown in the figure, one or more of each having a predetermined area are arranged at a predetermined interval according to the surface area of the target 606. Target 607 and target 6
The individual area settings and arrangements of 20 were determined beforehand in advance to find out how to obtain a film containing a desired specific element at a specific composition ratio so as to obtain the relationship of the area ratio of each target, and prepare a calibration curve, Do this based on the calibration curve.

The protective wall 618 covering the side surface of the target holder 605 is provided so as to cover the periphery of the target 606, the target 607, and the target 620 so as to prevent them from being sputtered by the plasma from the side surface. The RF power source 615 is a matching box 614.
Also, it is electrically connected to the peripheral wall of the film forming chamber 601 via a conducting wire 616, and is electrically connected to the target holder 605 via a matching box 614 and a conducting wire 617.

The target holder 605 includes a target 606, a target 607 and a target 6 during film formation.
A mechanism (not shown) for internally circulating cooling water is provided so that 20 is maintained at a predetermined temperature. Film forming chamber 60
1 is provided with an exhaust pipe 610 for exhausting the inside of the film forming chamber 601, and the exhaust pipe 610 communicates with a vacuum pump (not shown) via an exhaust valve 611. The gas supply pipe 612 is for introducing a sputtering gas such as argon gas (Ar gas) or neon gas (Ne gas) into the film formation chamber 601, and the flow rate of these sputtering gases is the gas supply pipe 612. It is adjusted by a flow rate adjusting valve 613 provided in the. Insulator 609
In order to electrically insulate the target holder 605 from the film forming chamber 601.
It is provided between the bottom wall of 01. The vacuum gauge 619
It is provided to detect the internal pressure of the film forming chamber 601, and the sputtering conditions are set using the detection pressure of the vacuum gauge 619.

The shutter plate 604 has a substrate 603 and a target 606 at a position above the target holder 605.
It is provided so that it can move horizontally so as to block the space between the target 607 and the target 620. The shutter plate 604 is used as follows. Before starting the film formation, the shutter plate 604 is moved to the upper part of the target holder 605 holding the target 606, the target 607, and the target 620, and the gas supply pipe 612 is moved.
Inert gas such as argon (Ar) gas is introduced into the film forming chamber 601 through the RF power source 615, RF power is applied from the RF power source 615 to turn the inert gas into plasma, and the generated plasma causes the targets 606, 607 and The target 620 is sputtered to remove impurities on the surface of each target. After that, the shutter plate 604 is moved to a position (not shown) that does not damage the film formation.

For each target, the following specific elements were used in correspondence with the heating resistor to be obtained.

[Aspect A] 606: Cr, 607: Ir, 620:
Ir [Aspect B-a] 606: Ti, 607: Ir, 620:
Ta [Aspect B-b] 606: Ta, 607: Ir, 620:
Ru [Aspect B-c] 606: Ta, 607: Ir, 620:
Os [Aspect B-d] 606: Ta, 607: Ir, 620:
Re [Aspect C] 606: Al, 607: Ir, 620:
Y [Aspect D] 606: Cr, 607: Ir, 620:
Ru [Aspect E] 606: Ta, 607: Pt, 620:
Pt The preparation of each sample using the apparatus shown in FIG. 6 was performed under the following film forming conditions.

Substrate placed on substrate holder 602: 4i
nchφ size Si single crystal substrate (Wacker) (1
4 inchφ size Si single crystal substrate (made by Wacker Co., Ltd.) on which a 2.5 μm thick SiO ₂ film is formed. Substrate setting temperature: 50 ° C. Base pressure: 2.6 × 10 ⁻⁴ Pa or less High frequency (PF) Power: 1000 W Sputtering gas and gas pressure: Argon gas,
0.4 Pa film formation time: 12 minutes Of the samples obtained as described above, SiO ₂
Some samples of the film formed on the film substrate were subjected to electron emission using EPM-810 manufactured by Shimadzu Corporation.
Probe microanalysis was performed to analyze the composition, and then the sample formed on the Si single crystal substrate
Crystallinity was observed with an X-ray diffractometer (trade name: MXP3) manufactured by Science. The obtained results are shown in the following drawings.

[Aspect A] FIG. 13 [Aspect Ba] FIG. 7 [Aspect Bb] FIG. 8 [Aspect Bc] FIG. 9 [Aspect Bd] FIG. 10 [Aspect C] FIG. 11 [Aspect D] FIG. 12 [Aspect E] FIG. 14 In these drawings, when the sample is a polycrystalline substance, ▲, and when the sample is a mixture of a polycrystalline substance and an amorphous substance, x. The case where is an amorphous substance is indicated by ●.

Then, a so-called "pond test" for observing the resistance to an electrochemical reaction and the resistance to mechanical shock was carried out using another part of each sample formed on a SiO ₂ film substrate, Furthermore, a step stress test (SST) for observing heat resistance and impact resistance in air was performed using the residue formed on the SiO ₂ film substrate. In the pond test, as a dipping liquid, a liquid consisting of 70 parts by weight of water and 30 parts by weight of diethylene glycol, in which 0.15 wt% of sodium acetate was dissolved, was used. The same method as the "Foaming endurance test". The results of the "pond test" and the results of the SST were comprehensively examined.
The examination results are shown below.

[Aspect A] The present inventors have found that non-single crystal I containing Ir and Cr as essential components in the following composition ratios.
It has been determined that the r-Cr material has suitability for use as a heating resistor of an inkjet head.

24 atomic% ≦ Ir ≦ 68 atomic% 32 atomic% ≦ Cr ≦ 76 atomic% [Aspect Ba] The inventors of the present invention have the following composition ratios Ir,
Non-single-crystal Ir containing Ta and Ti as essential components
It was found that the -Ta-Ti material has suitability for use as a heating resistor of an inkjet head.

46 atomic% ≤ Ir ≤ 78 atomic% 5 atomic% ≤ Ta ≤ 43 atomic% 10 atomic% ≤ Ti ≤ 38 atomic% [Aspect Bb] The present inventors have the following composition ratios Ir,
Non-single-crystal Ir containing Ru and Ta as essential components
It was found that the -Ru-Ta material has suitability for use as a heating resistor of an inkjet head.

10 atomic% ≤ Ir ≤ 67 atomic% 11 atomic% ≤ Ru ≤ 58 atomic% 18 atomic% ≤ Ta ≤ 63 atomic% [Aspect B-c] The present inventors have the following composition ratios Ir,
Non-single-crystal Ir containing Os and Ta as essential components
It was found that the -Os-Ta material has suitability for use as a heating resistor of an inkjet head.

17 atomic% ≤ Ir ≤ 73 atomic% 5 atomic% ≤ Os ≤ 58 atomic% 19 atomic% ≤ Ta ≤ 60 atomic% [Aspect Bd] The present inventors have the following composition ratios Ir,
Non-single-crystal Ir containing Re and Ta as essential components
It was found that the -Re-Ta material has suitability for use as a heating resistor of an inkjet head.

39 atomic% ≤ Ir ≤ 58 atomic% 9 atomic% ≤ Re ≤ 36 atomic% 22 atomic% ≤ Ta ≤ 51 atomic% [Aspect C] The present inventors have the following composition ratios Ir, Y and Al. A non-single crystal Ir-Y- containing as an essential component
It was found that the Al substance has suitability for use as a heating resistor of an inkjet head.

54 atomic% ≤ Ir ≤ 85 atomic% 2 atomic% ≤ Y ≤ 18 atomic% 13 atomic% ≤ Al ≤ 30 atomic% [Aspect D] The present inventors have the following composition ratios Ir, Ru.
And non-single crystal Ir-R containing Cr as an essential component
It was determined that the u-Cr material has suitability for use as a heating resistor of an inkjet head.

21 atomic% ≤ Ir ≤ 51 atomic% 17 atomic% ≤ Ru ≤ 42 atomic% 7 atomic% ≤ Cr ≤ 46 atomic% [Aspect E] The present inventors require Pt and Ta in the following composition ratios. It was found that the non-single crystal Pt-Ta material contained as a component has suitability for use as a heating resistor of an inkjet head.

62 atomic% ≤ Pt ≤ 75 atomic% 25 atomic% ≤ Ta ≤ 38 atomic% Further, the present inventors constructed an exothermic resistor using these non-single-crystal materials and manufactured an inkjet head. , Found the following facts.

That is, by using the above-mentioned non-single-crystal substance, it is possible to obtain a heat generating resistor excellent in resistance to impact of cavitation, resistance to erosion due to cavitation, electrochemical and chemical stability and heat resistance. In particular, it is possible to obtain an ink jet head in which the heat generating portion of the heat generating resistor is in direct contact with the ink in the ink path. In the ink jet head having this structure, the heat energy generated from the heat generating portion of the heat generating resistor can be directly applied to the ink, so that the heat conduction efficiency to the ink is good. Therefore, the power consumption by the heating resistor can be suppressed low, and the temperature rise of the inkjet head (temperature change of the inkjet head) can be significantly reduced. Therefore, it is possible to prevent a change in image density due to a change in temperature of the inkjet head. Further, it is possible to obtain a better responsiveness to the ejection signal applied to the heating resistor.

Further, in the heating resistor according to the present invention, it is possible to obtain a desired specific resistance value with good controllability and to make the dispersion of the resistance value within one ink jet head extremely small. Therefore, it is possible to perform ink ejection that is remarkably stable as compared with the related art, and it is possible to obtain an inkjet having excellent durability.

The ink jet head having good characteristics as described above is very suitable for high speed recording and high image quality due to the multi-ejection.

The present invention is mainly driven by a drive pulse having a relatively long width while utilizing the advantage of Ir which can bring out the superiority in terms of heat resistance, oxidation resistance, chemical stability and the like. The present invention also provides an inkjet head having a heating resistor formed of a material that exhibits sufficient durability even in the case. In the present invention, the heating resistor of the inkjet head is mainly
It is characterized in that it is made of a material containing Ir and a specific one element or Ir and a specific two elements in specific composition ratios. The present invention includes an inkjet head substrate for forming the inkjet head and an inkjet device having the inkjet head.

[Aspect A] Aspect A of the present invention is an electric device having a heat-generating resistor which is generated by energizing the thermal energy used to directly apply thermal energy to the ink on the heat acting surface to eject the ink. In the ink jet head including the heat conversion body, the heating resistor is substantially composed of a material containing Ir and Cr in the following composition ratios.

24 atomic% ≤ Ir ≤ 68 atomic% 32 atomic% ≤ Cr ≤ 76 atomic% In this embodiment, Ir which is excellent in heat resistance, oxidation resistance, chemical stability, etc. is prevented from generating unnecessary reactions. , Cr imparts mechanical strength and at the same time produces a stable oxide to bring about dissolution resistance.

The inventors of the present invention have confirmed through experiments that the following problems occur when a heating resistor for an ink jet head is constructed using a non-single-crystal Ir-Cr substance having a composition ratio outside the above range. .. That is, cavitation impact resistance, cavitation erosion resistance, electrochemical stability, chemical stability,
Heat resistance, adhesion, internal stress, etc. are not appropriate, and sufficient durability cannot be obtained when used as a heating resistor of an ink jet head, particularly when used as a heating resistor that is in direct contact with ink. For example, when the amount of Ir is too large, the film may peel off, and when the amount of Cr is too large, the resistance change may be severe.

[Aspect B-a] Aspect B-a of the present invention is a heating resistance generated by energizing the thermal energy used for directly applying thermal energy to the ink on the heat acting surface to eject the ink. An ink jet head having an electrothermal converter having a body is characterized in that the heating resistor is substantially made of a material containing Ir, Ta and Ti in the following composition ratios.

46 atomic% ≤ Ir ≤ 78 atomic% 5 atomic% ≤ Ta ≤ 43 atomic% 10 atomic% ≤ Ti ≤ 38 atomic% Ir which is excellent in heat resistance, oxidation resistance, chemical stability and the like in this embodiment. Prevents the generation of unnecessary reactions, Ta imparts mechanical strength and forms a stable oxide to provide dissolution resistance, and Ti coexists with these elements to impart ductility to the alloy material. , Stress appropriate, adhesion,
It is supposed to increase toughness.

The inventors of the present invention have the following problems when constructing a heating resistor for an ink jet head using a non-single-crystal Ir-Ta-Ti substance which is out of the specific composition range described above. Was confirmed through experiments. That is, cavitation impact resistance, cavitation erosion resistance, electrochemical stability,
Chemical stability, heat resistance, adhesion, internal stress, etc. are not appropriate, and sufficient durability is obtained when used as a heating resistor for an inkjet head, particularly when used as a heating resistor that is in direct contact with ink. I can't get it. For example, when Ir is too much, film peeling may occur, and when Ta or Ti is too much, resistance change may be severe.

[Aspect B-b] Aspect B-b of the present invention is a heating resistance generated by energizing the thermal energy used for directly applying thermal energy to the ink on the heat acting surface to eject the ink. An ink jet head having an electrothermal converter having a body is characterized in that the heating resistor is substantially made of a material containing Ir, Ru and Ta in the following composition ratios.

10 atomic% ≤ Ir ≤ 67 atomic% 11 atomic% ≤ Ru ≤ 58 atomic% 18 atomic% ≤ Ta ≤ 63 atomic% Ir in this embodiment is excellent in heat resistance, oxidation resistance, chemical stability and the like. Ru prevents the generation of unnecessary reactions and is excellent in oxidation resistance and chemical stability, and Ru forms alloys with other metal elements to provide mechanical strength and resistance stability.
a coexists with these elements to impart malleability to the alloy material,
It is supposed that the stress is moderated and the adhesion and toughness are increased.

The inventors of the present invention have the following problems when constructing a heating resistor for an ink jet head using a non-single crystal Ir-Ru-Ta substance which is out of the specific composition range described above. Confirmed through experiments. That is, resistance to impact of cavitation, resistance to erosion due to cavitation, electrochemical stability, chemical stability, heat resistance, adhesiveness, internal stress, etc. are not appropriate, and when used as a heating resistor for an inkjet head. In particular, sufficient durability cannot be obtained when used as a heating resistor that is in direct contact with ink. For example, Ir or R
When u is too much, peeling of the film may occur,
On the other hand, when Ta is too much, the resistance change may become severe.

[Aspect B-c] Aspect B-c of the present invention is a heat generation resistance generated by energizing the thermal energy used for directly applying thermal energy to the ink on the heat acting surface to eject the ink. An ink jet head having an electrothermal converter having a body is characterized in that the heating resistor is substantially made of a material containing Ir, Os and Ta in the following composition ratios.

17 atomic% ≤ Ir ≤ 73 atomic% 5 atomic% ≤ Os ≤ 58 atomic% 19 atomic% ≤ Ta ≤ 60 atomic% Ir in this embodiment is excellent in heat resistance, oxidation resistance, chemical stability, and the like. Prevents the generation of unnecessary reactions, Os imparts mechanical strength and forms a stable oxide to bring about dissolution resistance, and Ta coexists with these elements to impart ductility to the alloy material. , Stress appropriate, adhesion,
It is supposed to increase toughness.

The inventors of the present invention have the following problems when constructing a heating resistor for an ink jet head using a non-single-crystal Ir-Os-Ta substance that is out of the specific composition range described above. Confirmed through experiments. That is, resistance to impact of cavitation, resistance to erosion due to cavitation, electrochemical stability, chemical stability, heat resistance, adhesiveness, internal stress, etc. are not appropriate, and when used as a heating resistor for an inkjet head. In particular, sufficient durability cannot be obtained when used as a heating resistor that is in direct contact with ink. For example, when the amount of Ir is too large, the film may peel, and when the amount of Os or Ta is too large, the resistance change may be severe.

[Aspect B-d] Aspect B-d of the present invention is a heat generation resistance generated by energizing the thermal energy used to directly apply thermal energy to the ink on the heat acting surface to eject the ink. An ink jet head having an electrothermal converter having a body is characterized in that the heating resistor is substantially composed of a material containing Ir, Re and Ta in the following composition ratios.

39 atomic% ≤ Ir ≤ 58 atomic% 9 atomic% ≤ Re ≤ 36 atomic% 22 atomic% ≤ Ta ≤ 51 atomic% Ir in this embodiment is excellent in heat resistance, oxidation resistance, chemical stability and the like. Prevents the generation of unnecessary reactions, Re imparts mechanical strength and heat resistance, and Ta coexists with these elements to impart malleability to the alloy material and make stress appropriate,
It is imagined that the adhesion and toughness are increased.

The inventors of the present invention have the following problems when constructing a heating resistor for an ink jet head using a non-single-crystal Ir-Re-Ta substance that is out of the specific composition range described above. Confirmed through experiments. That is, resistance to impact of cavitation, resistance to erosion due to cavitation, electrochemical stability, chemical stability, heat resistance, adhesiveness, internal stress, etc. are not appropriate, and when used as a heating resistor for an inkjet head. In particular, sufficient durability cannot be obtained when used as a heating resistor that is in direct contact with ink. For example, when the amount of Ir is too large, the film may peel, and when the amount of Re or Ta is too large, the resistance change may be significant.

[Aspect C] Aspect C of the present invention is provided with a heating resistor for generating the thermal energy which is used for directly applying the thermal energy to the ink on the heat acting surface to eject the ink by energization. In an ink jet head having an electrothermal converter, the heating resistor is substantially I
It is characterized by being composed of a material containing r, Y and Al in the following composition ratios.

54 atomic% ≤ Ir ≤ 85 atomic% 2 atomic% ≤ Y ≤ 18 atomic% 13 atomic% ≤ Al ≤ 30 atomic% Ir in this embodiment is excellent in heat resistance, oxidation resistance, chemical stability, and the like. Prevents the generation of unnecessary reactions, Y alloys with other metal elements to impart mechanical strength and resistance stability, and Al coexists with these elements to impart ductility to the alloy material, It is supposed that the stress is moderated and the adhesion and toughness are increased.

The inventors of the present invention have the following problems when a heating resistor for an ink jet head is constructed by using a non-single crystal Ir-Y-Al substance that is out of the specific composition range described above. Confirmed through experiments. That is, resistance to impact of cavitation, resistance to erosion due to cavitation, electrochemical stability, chemical stability, heat resistance, adhesiveness, internal stress, etc. are not appropriate, and when used as a heating resistor for an inkjet head. In particular, sufficient durability cannot be obtained when used as a heating resistor that is in direct contact with ink. For example, when Ir is too much, peeling of the film may occur.
If the amount of Al or Al is too large, the resistance change may become severe.

[Aspect D] Aspect D of the present invention is provided with a heating resistor for generating the thermal energy which is used to directly apply thermal energy to the ink on the heat acting surface to eject the ink by energization. In an ink jet head having an electrothermal converter, the heating resistor is substantially I
It is characterized by being composed of a material containing r, Ru and Cr in the following composition ratios.

21 atomic% ≤ Ir ≤ 51 atomic% 17 atomic% ≤ Ru ≤ 42 atomic% 7 atomic% ≤ Cr ≤ 46 atomic% Ir in this embodiment is excellent in heat resistance, oxidation resistance, chemical stability, and the like. , Which prevents unnecessary reactions from occurring, is excellent in oxidation resistance, chemical stability, etc. Ru forms alloys with other metal elements to provide mechanical strength, and Cr coexists with those elements to form alloys. It is conceivable that it imparts ductility to the material, makes the stress suitable, and increases the adhesion and toughness.

The inventors of the present invention have the following problems when constructing a heating resistor for an ink jet head using a non-single-crystal Ir-Ru-Cr substance which is out of the specific composition range described above. Confirmed through experiments. That is, resistance to impact of cavitation, resistance to erosion due to cavitation, electrochemical stability, chemical stability, heat resistance, adhesiveness, internal stress, etc. are not appropriate, and when used as a heating resistor for an inkjet head. In particular, sufficient durability cannot be obtained when used as a heating resistor that is in direct contact with ink. For example, Ir or R
When u is too much, peeling of the film may occur,
On the other hand, when the amount of Cr is too large, the resistance change may be significant.

[Embodiment E] The embodiment E of the present invention is an electric machine having a heat-generating resistor which is generated by energizing the thermal energy used for ejecting the ink by directly applying the thermal energy to the ink on the heat acting surface. In the ink jet head including the heat conversion body, the heating resistor is substantially composed of a material containing Pt and Ta in the following composition ratios.

62 atomic% ≤ Pt ≤ 75 atomic% 25 atomic% ≤ Ta ≤ 38 atomic% In this embodiment, Pt, which has excellent heat resistance, oxidation resistance, chemical stability, etc., prevents the occurrence of unnecessary reactions. , Ta imparts mechanical strength and at the same time forms a stable oxide to bring about dissolution resistance.

The inventors of the present invention have conducted experiments to find that the following problems occur when a heating resistor for an ink jet head is constructed using a non-single-crystal Pt-Ta material which is out of the specific composition range described above. confirmed. That is, resistance to impact of cavitation, resistance to erosion due to cavitation, electrochemical stability, chemical stability, heat resistance, adhesion, internal stress, etc. are not appropriate,
When used as a heating resistor of an inkjet head, particularly when used as a heating resistor that is in direct contact with ink, sufficient durability cannot be obtained. For example, when Pt is too much, peeling of the film may occur.
When there are too many, the resistance change may become severe.

Thus, Ir and one specific element or Ir
The non-single-crystal substance according to the present invention, which contains a specific element and a specific two elements in specific composition ratios, can be applied to any kind of ink by organically acting these two or three elements. It can be used as a heating resistor that can be in direct contact for a long period of time.

The heating resistor according to the present invention is made of a non-single crystal alloy including the above-mentioned amorphous alloy, polycrystalline alloy, and a mixture thereof.

The thickness of the heating resistor layer in the present invention is
It is appropriately determined so that appropriate heat energy is effectively generated, but from the viewpoint of durability and production characteristics, it is preferably 3
00Å to 1 μm, more preferably 1000Å to 5000
It is Å.

The heating resistor according to the present invention may have the above-described composition at the surface layer portion, particularly the surface layer portion in contact with the ink, and the heating resistor does not necessarily have to have a uniform composition. Absent. For example, even if the heating resistor is composed of a plurality of layers, even if the composition has a distribution in the layer thickness direction, as long as the above-mentioned conditions are satisfied,
In addition to the effects of the present invention being obtained, particularly excellent adhesion to the support can be obtained. As an example, when the heating resistor according to the present invention contains Cr, Ta, Al, or Ti, if the layers of the heating resistor have a multi-layer structure and Cr, Ta, Al, or Ti in the lower layer is increased, Alternatively, even if the heating resistor has a single-layer structure, if the distribution state of Cr, Ta, Al, or Ti in the layer thickness direction is made different so as to increase toward the bottom, from the viewpoint of adhesion with the support. preferable.

Further, in general, the surface or the inside of the layer may be exposed to the atmosphere, or may be oxidized or take in a gas during the manufacturing process. Or slight internal oxidation or A
The incorporation of r does not reduce its effect.
Examples of such impurities include at least one element selected from C, N, Si, B, Na, Cl and Fe, including Ar and O.

In addition, the heating resistor according to the present invention is formed by, for example, the DC sputtering method, the RF sputtering method, the ion beam sputtering method, the vacuum evaporation method, the CVD method, or the like in which the respective materials are deposited simultaneously or alternately. You can

[0105]

EXAMPLES Next, an example of an ink jet head according to the present invention, which uses the alloy material having the above-mentioned composition as a heating resistor and is excellent in thermal efficiency and signal response, will be described with reference to the drawings.

FIG. 1A is a schematic front view seen from the ejection port side of an example of an ink jet head, and FIG. 1B is FIG.
It is an XY sectional view in (a).

The ink jet head of this example has the substrate 1
On a support comprising a lower layer 102 provided on the surface of 01,
A heating resistor layer 103 and an electrode 104 having a predetermined shape,
For forming an electrothermal conversion element having a protective layer 106 covering at least the electrodes 104 and 105 of the electrothermal conversion element, and further providing a liquid path 111 communicating with the ejection port 108 thereon. Grooved plate 1 having a recess
It has a basic structure in which 07 is joined.

The electrothermal converter in this example comprises a heating resistor layer 103 and an electrode 10 connected to the heating resistor layer 103.
4, 105 and a protective layer 106 provided as necessary. The inkjet head substrate has a support having a substrate 101 and a lower layer 102, an electrothermal converter, and a protective layer 106. In the case of the inkjet head of this example, the heat acting surface 109 that directly transfers heat to the ink is the electrode 10 of the heating resistor layer 103.
The part sandwiched between 4, 105 (heat generating part) is almost the same as the surface in contact with the ink, and the protective film 106 of the heat generating part.
It corresponds to the part not covered with.

The lower layer 102 is provided as necessary,
It has a function of adjusting the amount of heat escaping to the substrate 101 side and efficiently transmitting the heat generated in the heat generating portion to the ink.

The electrodes 104 and 105 are electrodes for energizing the heating resistor layer 103 in order to generate heat from the heat generating portion. In this example, the electrode 104 is a common electrode for each heat generating portion, and the electrode 105 is for each heat generating portion. It is a selection electrode for individually energizing the generator.

The protective layer 106 is provided as necessary in order to prevent the electrodes 104 and 105 from coming into contact with the ink to be chemically attacked, or to prevent a short circuit between the electrodes through the ink.

FIG. 2A is a schematic plan view of the ink jet head substrate at the stage where the heating resistor layer 103 and the electrodes 104 and 105 are provided. Also, FIG.
(B) is a schematic plan view of the inkjet head substrate at the stage where the protective layer 106 is provided on these layers.

In this ink jet head, since the alloy material having the above composition is used for the heating resistor layer 103, the ink is good even though the ink and the heat acting surface 109 are in direct contact with each other. Has excellent durability.
In this way, if the heat generating portion of the heat generating resistor, which is the heat energy source, is in direct contact with the ink, the heat generated in the heat generating portion can be directly transferred to the ink, and the heat is generated via the protective layer. The heat transfer can be performed extremely efficiently as compared with the case of transferring heat to the ink.

As a result, the power consumption of the heating resistor can be kept low, and the temperature rise of the ink jet head can be reduced. Also, the responsiveness to the input signal (discharge command signal) to the electrothermal converter is improved,
The foamed state required for ejection can be stably obtained.

The structure of the electrothermal converter having the heating resistor formed by using the alloy material according to the present invention is not limited to the examples shown in FIGS. 1 and 2, and various modes can be adopted. obtain.

FIG. 3 is a schematic sectional view showing the structure of the main part of another example of the ink jet head. In this example, the substrate 301
A heating resistor layer 103 having a predetermined shape and electrodes 104, 10 are formed on a support body having a lower layer 302 provided on the surface of
5 is formed. In the inkjet head substrate of this embodiment, the electrodes 304,
By covering each of the layers 305 with the heating resistor layer 303 made of the alloy material having the above composition, the protective layer of the electrode is omitted.

In the example shown in FIGS. 1A and 1B, the direction in which ink is supplied onto the heat acting surface 109 and the heat energy generated from the heat generating portion are used to discharge the ink. Although the direction in which the ink is ejected from the outlet 108 is substantially the same, the configurations of the ejection port and the liquid path of the inkjet head are not limited to this, and these directions may be different.

FIG. 4 is a schematic sectional view showing the structure of the main part of another example of an ink jet head. This example is shown in FIG.
4A is a plan view and FIG. 4A is a cross-sectional view taken along the line AB. As shown in FIG. 4 (b), it is also possible to adopt a configuration in which the two directions of the ejection port and the liquid passage of the inkjet head form a substantially right angle. In FIG. 4, a discharge port plate 410
Is a plate having an appropriate thickness provided with a discharge port, and the support member 412 supports the discharge port plate 410. Since other configurations are similar to those of the example shown in FIGS. 1 and 2, the same reference numerals as those in FIGS.

The ink jet head of the present invention may have a plurality of ink ejection structure units each having an ejection port, a liquid path and a heat generating portion, as shown in FIGS. For this reason, the present invention is particularly effective when the ink discharge unit is arranged at a high density of, for example, 8 lines / mm or more, further 12 lines / mm or more. An example of the ink jet structure having a plurality of ink discharge structure units is, for example, a so-called full line type ink jet head having a structure in which the ink discharge structure units are arranged over the entire width of the print area of the recording member.

In the case of a so-called full-line ink-jet head having a plurality of ejection openings corresponding to the width of the recording area of the recording member, in other words, 1000 or more ejection openings or 2000 or more ejection openings are provided. In the case of an inkjet head, the variation in the resistance value for each heat generating portion in one inkjet head affects the uniformity of the volume of the droplets ejected from the ejection port, which causes the uneven density of the image. May be. However, in the heating resistor of the present invention, the desired specific resistance value can be controlled with good controllability,
Since it is possible to obtain the resistance value variation in one ink jet head to be extremely small, it is possible to solve the above-mentioned problem in a remarkably good state.

As described above, the heating resistor according to the present invention is required to have a high recording speed (for example, a printing speed of 30 cm / sec or more, and further a printing speed of 60 cm / sec or more) and a high density. This has an increasing significance in the tendency that the number of ejection ports of the head increases.

Further, in the ink jet head of the form in which the functional element is structurally provided inside the surface of the ink jet head substrate as disclosed in US Pat. No. 4,429,321, the ink jet head It is one of the important points that the entire electric circuit is accurately formed as designed so that the function of the functional element can be easily kept in a normal state. It is valid. This is because, as described above, in the heating resistor according to the present invention, a desired specific resistance can be obtained with good controllability and the variation in resistance value within one inkjet head can be extremely reduced. This is because the entire electric circuit can be accurately formed as designed.

In addition, the heating resistor of the present invention is also extremely effective for a disposable cartridge type ink jet head integrally provided with an ink tank for storing the ink supplied to the heat acting surface. This is because the inkjet head of this embodiment is required to have a low running cost of the entire inkjet device in which the inkjet head is mounted. However, as described above, the heating resistor of the present invention is in direct contact with the ink. This is because the heat transfer efficiency to the ink can be improved, and therefore the power consumption of the entire device can be reduced and the above requirements can be easily met.

By the way, the ink jet head of the present invention may have a form in which a protective layer is provided on the heating resistor. In that case, although the efficiency of heat transfer to the ink is somewhat sacrificed, it is possible to obtain an inkjet head that is more excellent in terms of durability of the electrothermal converter and resistance change of the heating resistor due to an electrochemical reaction. From this point of view, when the protective layer is provided, it is preferable that the total thickness of the protective layer is within the range of 1000Å to 5 μm. As the protective layer, specifically, a Si-containing insulating layer made of SiO ₂ , SiN or the like provided on the heating resistor, and an Al layer provided so as to form a heat acting surface on the layer. What has it is mentioned as a preferable example.

Further, the heater is not limited to the generation of thermal energy used for ejecting ink, but may be used as a heater for heating a desired portion in an ink jet head provided as necessary, It is particularly preferably used when such a heater is in direct contact with the ink.

By mounting the ink jet head having the above-described structure on the apparatus main body and applying a signal to the ink jet head from the apparatus main body, an ink jet recording apparatus capable of high speed recording and high image quality recording can be obtained.

FIG. 5 is a schematic perspective view showing an example of an ink jet recording apparatus IJRA to which the present invention is applied. The driving force transmission gear 5 is interlocked with the forward / reverse rotation of the drive motor 5013.
Lead screw 5 rotating through 011 and 5009
Carriage H engaging with the spiral groove 5004 of 005
C has a pin (not shown) and is reciprocated in the directions of arrows a and b. A paper pressing plate 5002 presses the paper against the platen 5000 in the carriage movement direction.
Reference numerals 5007 and 5008 denote photocouplers for confirming the presence of the lever 5006 of the carriage in this area, and checking the motor 5013.
Is a home position detecting means for switching the rotation direction of the. Reference numeral 5016 is a cartridge type recording inkjet head IJ in which an ink tank is integrally provided.
Reference numeral 5015 denotes a member that supports a cap member 5022 that caps the entire surface of C. Reference numeral 5015 is a suction unit that sucks the inside of the cap to perform suction recovery of the recording inkjet head through the cap opening 5023. Reference numeral 5017 is a cleaning blade, and 5019 is a member that allows this blade to move in the front-rear direction, and these are supported by a main body support plate 5018. Needless to say, the blade is not limited to this form, and a known cleaning blade can be applied to this example. Reference numeral 5012 is a lever for starting suction for suction recovery, which moves in accordance with movement of a cam 5020 that engages with the carriage, and the driving force from the driving motor is controlled by known transmission means such as clutch switching. To be done. A CPU that gives a signal to the electrothermal converter provided in the inkjet head IJC and controls drive of each mechanism described above is provided on the apparatus main body side (not shown).

In the ink jet head and the ink jet apparatus of the present invention, the portions other than the heat generating resistor described above can be formed by using known materials and methods.

[0129] Example Hereinafter, a more detailed description of the present invention by way of specific examples.

[Example corresponding to Aspect A] (Example A-1) One Si single crystal substrate (manufactured by Wacker) and one Si single crystal having a 2.5 μm thick SiO ₂ film formed on its surface. A crystal substrate (manufactured by Wacker) is set as a sputtering substrate 603 for sputtering on the substrate holder 602 in the film forming chamber 601 of the above-described high frequency sputtering apparatus shown in FIG. 6, and 99.9% by weight or more. On the Cr target 606, which is a high-purity raw material of, the two Ir targets 60, which are Ir sheets of approximately the same purity.
Using the composite target on which No. 7 was placed, co-sputtering was performed under the following conditions to form an alloy layer having a thickness of about 2000Å.

Co-sputtering conditions Target area ratio Cr: Ir = 61: 39 Target area 5 inch (127 mm) φ High frequency power 1000 W Deposition time 12 minutes Substrate setting temperature 50 ° C. Base pressure 2.6 × 10 ⁻⁴ Pa or less Sputtering gas pressure 0.4 Pa (argon) Further, for the film formed on the substrate with the SiO ₂ film, the Al layer to be the electrodes 104 and 105 (see FIG. 1) is continuously switched to the target containing only Al and is formed on the alloy layer. Was formed to a layer thickness of 6000Å by sputtering according to a conventional method, and the sputtering was completed.

After that, a photoresist is formed twice in a predetermined pattern by photolithography, and once a photoresist is formed.
Wet etching of the 1-layer, the second heating resistance layer is dry-etched by ion milling for the second time, and the heating resistor 103 and the electrode 1 having the shapes shown in FIGS. 1B and 2A are formed.
04, 105 were formed. The size of the heat generating part is 30 μm ×
170 μm, the pitch of the heat generating portions was 125 μm, and 24 heat generating portions were arranged in a line to form one group, and a plurality of this group were formed on the SiO ₂ film substrate.

Next, an SiO ₂ film is formed on this by sputtering, and thereafter, this SiO ₂ film is covered with electrodes of 10 μm on both sides of the heat generating portion by using photolithography and reactive ion etching. To form a protective layer 106. Heat generation part 10
The size of 9 is 30 μm × 150 μm.

The above-prepared product was subjected to cutting processing for each group to prepare a large number of inkjet head substrates, and a part of the substrates was subjected to the evaluation test described below.

In another part, FIG. 1 (a) and FIG.
In order to form the ejection port 108 and the liquid path 111 shown in (b), a glass grooved plate 107 was joined to obtain an inkjet head.

When these ink jet heads thus obtained were mounted on a recording apparatus having a known structure and a recording operation was performed, recording with good ejection stability and good signal response was performed, and high quality images were obtained. I was able to do it. Further, the durability in use in this device was also good.

(1) Measurement of Film Composition The composition of the material was clarified by performing EPMA (electron probe microanalysis) on the thermal action part having no protective film under the following conditions using the above-mentioned measuring device.

Acceleration voltage 15 kV Probe diameter 10 μm Probe current 10 nA However, quantitative analysis was performed only on the main constituent elements of the target as a raw material, and the argon was generally attached to the surface of the film by sputtering and adhered to the surface. It does not go to carbon or oxygen that seems to exist. Also, for any other impurity element, the detection error of the analyzer (about 0.2% by weight) is obtained by the combined use of quantitative analysis and qualitative analysis in all samples.
The following was confirmed.

(2) Measurement of film thickness Stylus-type surface profiler (TENCOR INSTRUM)
It was performed by measuring the level difference using an alpha-step 200 manufactured by ENTs.

(3) Measurement of Crystallinity The X-ray diffraction pattern of the sample formed on the Si single crystal substrate was measured by using the above-described measuring device, and a crystal having a sharp peak appeared was crystalline. (C), one that seems to be in an amorphous state without a sharp peak (A), and one that seems to be a mixture of both (M).
Classified into types.

(4) Measurement of specific resistance 4-probe resistance meter (K-705R manufactured by Kyowa RIKEN Co., Ltd.)
It was calculated from the sheet resistance value and the film thickness measured in L).

(5) Measurement of Density The change in weight of the substrate before and after film formation was measured by INABA SEISAK.
It was measured with an ultra micro balance manufactured by USHO LTD, and calculated from the value, the area of the film, and the film thickness.

(6) Measurement of internal stress The warpage of two elongated glass substrates was measured before and after film formation, and the amount of change and the length, thickness, Young's modulus, Poisson's ratio, and film thickness of the glass substrates were measured. Calculated from

(7) Foaming test in low-conductivity ink The portion of the device (ink jet head substrate) provided with the protective layer 106 obtained at the stage where the ejection port and the liquid path were not formed was obtained as follows. Low conductivity ink (clear ink)
It is immersed in the external power source and has a width of 20 on the electrodes 104 and 105.
A foaming threshold voltage (V _th ) was obtained by applying a rectangular voltage of μsec and a frequency of 5 kHz while gradually increasing the voltage.

Ink composition Water 70 parts by weight Diethylene glycol 30 parts by weight Ink conductivity 25 μS / cm Next, in this ink, a pulse voltage whose voltage is 1.1 times V _th is applied to repeatedly foam 24 pieces of heat. Working unit 109
The number of applied pulses until each of them was broken was measured, and the average value thereof was calculated (hereinafter, such a foaming durability test in the ink is also commonly referred to as "ike test"). In Comparative Example A-1 described later, the ratio obtained by dividing the average value calculated in this Example by the value of 2/5 of the average value calculated in the same manner as in this Example is the first value.
Shown in the table.

Since the ink having the above composition has a small electric conductivity, the influence of the electrochemical reaction is small, and the main cause of the breakage is erosion due to cavitation and thermal shock, and the durability to these can be known.

(8) Foaming durability test in high conductivity ink Next, a foaming durability test was performed in the following high conductivity ink (black ink here) in the same manner as (7). Comparative Example A-1
The ratio obtained by dividing the average value calculated in this example in the same manner as in (7) by the value of 2/5 of the average value calculated by the foaming durability test with the low conductivity ink in Table 1 is shown in Table 1. Shown in. At this time, not only the number of applied pulses but also the change in resistance value of the heating resistor before and after the application of the pulse signal was measured.

Ink composition Water 68 parts by weight Diethylene glycol 30 parts by weight Black dye (CI Food Black 2) 2 parts by weight PH adjusting agent (sodium acetate) Trace amount (PH6
Adjust to ~ 7) Ink conductivity 2.6 mS
In this measurement, the ink conductivity is high, and a current also flows through the ink when a voltage is applied. Therefore, in addition to erosion due to cavitation, an electrochemical reaction is a major factor that damages the heating resistor.

(9) Step stress test (SST) The pulse width and frequency are the same as those in (7) and (8), and the pulse voltage is increased every fixed step (6 × 10 ⁵ pulses, 2 minutes). Stress test in air,
Breaking voltage (V _break) the ratio of the V _th obtained in (7) (M) determined to estimate the temperature that the heat acting surface reaches at V _{bre ak.} This makes it possible to know the heat resistance and the thermal shock resistance in the air.

(10) Evaluation with an actual inkjet head Example of printer driving conditions Number of ejection ports 24 Driving frequency 2 kHz Driving pulse width 20 μsec Driving voltage 1.2 times ejection threshold voltage (V _th ) Black ink used in ink tank test Same item (i) Print quality Characters, etc. are printed using an inkjet head and judged visually. When an extremely good print was obtained using an inkjet head, it was evaluated as ◯, when good print was obtained as Δ, and when trouble such as non-ejection or fading occurred, it was evaluated as x.

(Ii) Durability After printing about A4 size 2000 sheets by using three ink jet heads for each heating element,
The ink-jet heads with extremely good and normal printing can be obtained from all three ink-jet heads, and the ink-jet heads with abnormalities such as failures in any one of the three ink-jet head heating resistors are marked with x.

(11) The criteria for comprehensive evaluation are shown below.

◯: Durability test result by pond test in low conductivity ink: ≧ 6 × 10 ⁷ Durability test result by pond test in high conductivity ink: ≧ 3 × 10 ⁷ Resistance change: ≦ 5%, SST M: ≧ 1.7, and both evaluation results of print quality and durability are ◯.

X: Whether the result of the pond test in the high conductivity ink is a resistance change or SSTM is lower than Δ in the comprehensive evaluation, or one of the print quality and the durability is x. in the case of.

(Examples A-2 to A-4) Example A except that the area ratio of each raw material in the sputtering target was variously changed as shown in Table 1 when the heating resistor was formed.
A device (inkjet head substrate) and an inkjet head were produced in the same manner as in -1. Table 1 shows the evaluation results of the obtained devices in the same manner as in Example A-1. In addition, the inkjet heads produced using these devices all had good recording characteristics and durability.

(Examples A-5 to A-8) Examples A-1 to A-8
Sputtering SiO ₂ on the heating resistor layer of the inkjet head substrate manufactured in the same manner as the inkjet head substrate manufactured in A-4 by using the above-described sputtering apparatus of FIG. To provide a SiO ₂ protective layer with a thickness of 1.0 μm.
An inkjet head substrate and an inkjet head were produced in the same manner as in each of the examples except that a Ta protective layer having a thickness of 0.5 μm was provided by sputtering Ta on the O ₂ protective layer.

An evaluation test was carried out on the obtained ink jet head substrate and ink jet head in the same manner as in Example A-1. As a result, an ink immersion test (pond test) was carried out as compared with the example in which the protective layer was not provided. The result of the durability test by (3) was improved little by little for the low conductivity ink and the high conductivity ink. Further, the resistance change was smaller than that in the example in which the protective layer was not provided. However, the M of SST became smaller overall.

From the above, by providing the protective layer,
It can be seen that the durability and the resistance change mainly due to the electrochemical reaction are improved.

Incidentally, the M of SST was reduced because the heat conduction efficiency to the ink was lowered by providing the protective layer, so that the foaming threshold voltage (V _th ) which is the denominator of M was increased. Imagined.

(Comparative Examples A-1 to A-2) Example A was repeated except that the area ratio of each raw material in the sputtering target was changed variously as shown in Table 1 when the heating resistor was formed.
A device (inkjet head substrate) and an inkjet head were produced in the same manner as in -1.

For each of the obtained devices, Example A-
The evaluation results obtained in the same manner as 1 are shown in Table 1.

(Comparative Example A-3) At the time of forming the heating resistor,
A device (inkjet head substrate) and an inkjet head were produced in the same manner as in Example A-1 except that a Cr target was used as the sputtering target.

For each of the obtained devices, Example A-
The evaluation results obtained in the same manner as 1 are shown in Table 1.

[Example Corresponding to Aspect B-a] (Example B-a-1) One Si single crystal substrate (manufactured by Wacker) and a 2.5 μm thick SiO ₂ film formed on the surface. A Si single crystal substrate (manufactured by Wacker Co., Ltd.) is set on the substrate holder 602 in the film forming chamber 601 of the above-described high frequency sputtering apparatus shown in FIG. 6 as a sputtering substrate 603 for sputtering, and 99. Co-sputtering under the following conditions using a composite target in which Ir target 607 and Ta target 620, which are Ir sheets of similar purity, are placed on Ti target 606, which is a high-purity raw material of 9 wt% or more. About 200
An alloy layer having a thickness of 0Å was formed.

Co-sputtering conditions Target area ratio Ti: Ta: Ir = 43: 37:
20 Target area 5 inches (127 mm) φ High frequency power 1000 W Substrate setting temperature 50 ° C. Deposition time 12 minutes Base pressure 2.6 × 10 ⁻⁴ Pa or less Sputtering gas pressure 0.4 Pa (Argon) Furthermore, on the substrate with SiO ₂ film As for the formed film, the target is made of only Al, and the Al layer to be the electrodes 104 and 105 (see FIG. 1) is formed on the alloy layer by sputtering in a layer thickness of 6000Å according to a conventional method. The sputtering was completed.

After that, a photoresist is formed twice in a predetermined pattern by photolithography, and once a photoresist is formed.
Wet etching of the 1-layer, the second heating resistance layer is dry-etched by ion milling for the second time, and the heating resistor 103 and the electrode 1 having the shapes shown in FIGS. 1B and 2A are formed.
04, 105 were formed. The size of the heat generating part is 30 μm ×
170 μm, the pitch of the heat generating portions was 125 μm, and 24 heat generating portions were arranged in a line to form one group, and a plurality of this group were formed on the SiO ₂ film substrate.

Next, a SiO ₂ film is formed on this by sputtering, and thereafter, this SiO ₂ film is covered by 10 μm on both sides of the heat generating portion by photolithography and reactive ion etching. To form a protective layer 106. Heat generation part 10
The size of 9 is 30 μm × 150 μm.

The above-prepared product was subjected to a cutting process for each group to prepare a large number of inkjet head substrates, and a part of the substrates was subjected to the evaluation test described below. Table 2 shows the evaluation results of the obtained devices (inkjet head substrates) in the same manner as in Example A-1.

In another part, FIG. 1 (a) and FIG.
In order to form the ejection port 108 and the liquid path 111 shown in (b), a glass grooved plate 107 was joined to obtain an inkjet head.

The obtained ink jet heads were mounted on a recording apparatus having a known structure and a recording operation was performed. As a result, recording with good ejection stability and good signal response was performed, and a high quality image was obtained. I was able to do it. Further, the durability in use in this device was also good.

(Examples B-a-2 to B-a-6) Example B- except that the area ratio of each raw material in the sputtering target was variously changed as shown in Table 2 when the heating resistor was formed. A device (inkjet head substrate) and an inkjet head were produced in the same manner as in a-1. Table 2 shows the evaluation results of the obtained devices in the same manner as in Example Ba-1. In addition, the inkjet heads produced using these devices all had good recording characteristics and durability.

(Examples B-a-7 to B-a-12) For ink-jet heads prepared in the same manner as the ink-jet head substrates prepared in Examples B-a-1 to B-a-6, respectively. The above-mentioned FIG.
The SiO ₂ protective layer having a thickness of 1.0 μm is provided by sputtering SiO ₂ by using the sputtering apparatus described above, and Ta is sputtered on the SiO ₂ protective layer to form a Ta protective layer having a thickness of 0.5 μm. An inkjet head substrate and an inkjet head were manufactured in the same manner as in each of the examples except for providing them.

An evaluation test was conducted on the obtained ink jet head substrate and ink jet head in the same manner as in Example Ba-1. As a result, an ink immersion test ( The result of the durability test by the pond test) was improved little by little for the low conductivity ink and the high conductivity ink. However, M of SST
It became smaller overall.

From the above, by providing the protective layer,
It can be seen that the durability is improved.

The M of SST was reduced because the heat conduction efficiency to the ink was lowered by providing the protective layer, and thus the foaming threshold voltage (V _th ) which is the denominator of M was increased. Imagined.

Comparative Examples B-a-1 to B-a-2 Example B- except that the area ratio of each raw material in the sputtering target was variously changed as shown in Table 2 when the heating resistor was formed. A device (inkjet head substrate) and an inkjet head were produced in the same manner as in a-1. Table 2 shows the evaluation results of the obtained devices in the same manner as in Example Ba-1.

Comparative Examples Ba-3 to Ba-5 Ti was used as a sputtering target when the heating resistor was formed.
A device (inkjet head substrate) and a device (inkjet head substrate) were prepared in the same manner as in Example Ba-1 except that the target was provided with a Ta sheet and the area ratio of each raw material in the sputtering target was changed as shown in Table 2. An inkjet head was produced. Table 2 shows the evaluation results of the obtained devices in the same manner as in Example Ba-1.

(Comparative Example Ba-6) At the time of forming the heating resistor, a sputtering target provided with an Ir sheet on a Ti target was used, and the area ratio of each raw material in the sputtering target was as shown in Table 2. A device (ink jet head substrate) and an ink jet head were produced in the same manner as in Example B-a-1 except for changes. For each device obtained, Example B
Table 2 shows the evaluation results obtained in the same manner as in -a-1.

(Comparative Examples Ba-7 to Ba-10) T was used as a sputtering target when the heating resistor was formed.
a The target in which the Ir sheet is provided is used, and the area ratio of each raw material in the sputtering target is set to the second
A device (ink jet head substrate) and an ink jet head were produced in the same manner as in Example Ba-1 except for the changes as shown in the table. For each of the obtained devices, the evaluation result obtained in the same manner as in Example Ba-1
Shown in the table.

(Comparative Example Ba-11) A device (inkjet head substrate) and an inkjet printer were prepared in the same manner as in Example Ba-1 except that a Ti target was used as a sputtering target when the heating resistor was formed. A head was produced. Table 2 shows the evaluation results of the obtained devices in the same manner as in Example Ba-1.

(Comparative Example B-a-12) A device (ink-jet head substrate) and ink-jet were prepared in the same manner as in Example B-a-1, except that a Ta target was used as a sputtering target when the heating resistor was formed. A head was produced. Table 2 shows the evaluation results of the obtained devices in the same manner as in Example Ba-1.

[Example Corresponding to Aspect B-b] (Example B-b-1) One Si single crystal substrate (manufactured by Wacker) and a SiO ₂ film having a thickness of 2.5 μm were formed on the surface. A Si single crystal substrate (manufactured by Wacker Co., Ltd.) is set on the substrate holder 602 in the film forming chamber 601 of the above-described high frequency sputtering apparatus shown in FIG. 6 as a sputtering substrate 603 for sputtering, and 99. Co-sputtering under the following conditions using a composite target in which Ir target 607 and Ru target 620, which are Ir sheets of similar purity, are placed on Ta target 606, which is a high-purity raw material of 9% by weight or more. About 200
An alloy layer having a thickness of 0Å was formed.

Co-sputtering conditions Target area ratio Ta: Ru: Ir = 62: 13:
25 Target area 5 inches (127 mm) φ High frequency power 1000 W Deposition time 12 minutes Substrate setting temperature 50 ° C. Base pressure 2.6 × 10 ⁻⁴ Pa or less Sputtering gas pressure 0.4 Pa (Argon) Furthermore, on the substrate with SiO ₂ film As for the formed film, the target is made of only Al, and the Al layer to be the electrodes 104 and 105 (see FIG. 1) is formed on the alloy layer by sputtering in a layer thickness of 6000Å according to a conventional method. The sputtering was completed.

After that, a photoresist is formed into a predetermined pattern twice by photolithography, and once the photoresist is
Wet etching of the 1-layer, the second heating resistance layer is dry-etched by ion milling for the second time, and the heating resistor 103 and the electrode 1 having the shapes shown in FIGS. 1B and 2A are formed.
04, 105 were formed. The size of the heat generating part is 30 μm ×
170 μm, the pitch of the heat generating portions was 125 μm, and 24 heat generating portions were arranged in a line to form one group, and a plurality of this group were formed on the SiO ₂ film substrate.

Next, a SiO ₂ film is formed on this by sputtering, and thereafter, this SiO ₂ film is covered with electrodes of 10 μm on both sides of the heat generating portion by using photolithography and reactive ion etching. To form a protective layer 106. Heat generation part 10
The size of 9 is 30 μm × 150 μm.

The manufactured product in such a state was cut out for each group to prepare a large number of inkjet head substrates, and a part of the substrates was subjected to the evaluation test described below. Table 3 shows the evaluation results of the obtained devices (inkjet head substrates) in the same manner as in Example A-1.

In another part, FIG. 1 (a) and FIG.
In order to form the ejection port 108 and the liquid path 111 shown in (b), a glass grooved plate 107 was joined to obtain an inkjet head.

When these ink jet heads thus obtained were mounted on a recording apparatus having a known structure and a recording operation was carried out, it was possible to perform recording with good ejection stability and good signal response, and to obtain a high quality image. I was able to do it. Further, the durability in use in this device was also good.

(Examples B-b-2 to B-b-6) Example B- except that the area ratio of each raw material in the sputtering target was variously changed as shown in Table 3 when the heating resistor was formed. A device (substrate for inkjet head) and an inkjet head were produced in the same manner as in b-1. Table 3 shows the evaluation results of the obtained devices which were evaluated in the same manner as in Example B-b-1. In addition, the inkjet heads produced using these devices all had good recording characteristics and durability.

(Examples B-b-7 to B-b-12) For inkjet heads prepared in the same manner as the inkjet head substrates prepared in Examples B-b-1 to B-b-6, respectively. The above-mentioned FIG.
The SiO ₂ protective layer having a thickness of 1.0 μm is provided by sputtering SiO ₂ by using the sputtering apparatus described above, and Ta is sputtered on the SiO ₂ protective layer to form a Ta protective layer having a thickness of 0.5 μm. An inkjet head substrate and an inkjet head were manufactured in the same manner as in each of the examples except for providing them.

An evaluation test was conducted on the obtained ink jet head substrate and ink jet head in the same manner as in Example Bb-1. As a result, an ink immersion test ( The result of the durability test by the pond test) was improved little by little for the low conductivity ink and the high conductivity ink. However, M of SST
It became smaller overall.

From the above, by providing the protective layer,
It can be seen that the durability is improved.

Note that the M of SST became smaller because the heat conduction efficiency to the ink was lowered by providing the protective layer, so that the foaming threshold voltage (V _th ) which is the denominator of M became larger. Imagined.

(Comparative Example B-b-1) When forming a heating resistor, a sputtering target provided with a Ru sheet on a Ta target was used, and the area ratio of each raw material in the sputtering target was as shown in Table 3. A device (ink jet head substrate) and an ink jet head were produced in the same manner as in Example B-b-1 except for changes.

For each of the obtained devices, Example B-
Table 3 shows the evaluation results obtained in the same manner as in b-1.

(Comparative Examples B-b-2 to B-b-4) Ta was used as a sputtering target when the heating resistor was formed.
A device (inkjet head substrate) was prepared in the same manner as in Example B-b-1 except that an Ir sheet was provided on the target and the area ratio of each raw material in the sputtering target was changed as shown in Table 3. An inkjet head was produced.

For each of the obtained devices, Example B-
Table 3 shows the evaluation results obtained in the same manner as in b-1.

(Comparative Example Bb-5) A device (inkjet head substrate) and an inkjet head were prepared in the same manner as in Example Bb-1 except that a Ta target was used as a sputtering target when the heating resistor was formed. It was made.

For each of the obtained devices, Example B-
Table 3 shows the evaluation results obtained in the same manner as in b-1.

[Example Corresponding to Aspect B-c] (Example B-c-1) One Si single crystal substrate (manufactured by Wacker) and one sheet having a 2.5 μm thick SiO film formed on its surface The Si single crystal substrate (manufactured by Wacker Co., Ltd.) was set on the substrate holder 602 in the film forming chamber 601 of the above-described high frequency sputtering apparatus shown in FIG. 6 as a sputtering substrate 603 for sputtering. Co-sputtering is performed under the following conditions using a composite target in which an Ir target 607 and an Os target 620, which are Ir sheets of similar purity, are placed on a Ta target 606, which is a high-purity raw material having a weight percentage of at least About 2000
An alloy layer having a thickness of Å was formed.

Co-sputtering conditions Target area ratio Ta: Os: Ir = 43: 37:
20 Target area 5 inches (127 mm) φ High frequency power 1000 W Substrate setting temperature 50 ° C. Deposition time 12 minutes Base pressure 2.6 × 10 ⁻⁴ Pa or less Sputtering gas pressure 0.4 Pa (Argon) Furthermore, on the substrate with SiO ₂ film As for the formed film, the target is made of only Al, and the Al layer to be the electrodes 104 and 105 (see FIG. 1) is formed on the alloy layer by sputtering in a layer thickness of 6000Å according to a conventional method. The sputtering was completed.

After that, a photoresist is formed twice in a predetermined pattern by photolithography technique, and once a photoresist is formed.
Wet etching of the 1-layer, the second heating resistance layer is dry-etched by ion milling for the second time, and the heating resistor 103 and the electrode 1 having the shapes shown in FIGS. 1B and 2A are formed.
04, 105 were formed. The size of the heat generating part is 30 μm ×
170 μm, the pitch of the heat generating portions was 125 μm, and 24 heat generating portions were arranged in a line to form one group, and a plurality of this group were formed on the SiO ₂ film substrate.

Next, a SiO ₂ film is formed on this by sputtering, and thereafter, this SiO ₂ film is covered with electrodes of 10 μm on both sides of the heat generating portion by using photolithography and reactive ion etching. To form a protective layer 106. Heat generation part 10
The size of 9 is 30 μm × 150 μm.

The manufactured product in such a state was cut out for each group to prepare a large number of ink jet head substrates, and a part of the substrates was subjected to the evaluation test described below. Table 4 shows the evaluation results of the obtained devices (substrate for inkjet head) in the same manner as in Example A-1.

Another part of FIG. 1A and FIG.
In order to form the ejection port 108 and the liquid path 111 shown in (b), a glass grooved plate 107 was joined to obtain an inkjet head.

When these ink jet heads thus obtained were mounted on a recording apparatus having a known structure and a recording operation was performed, recording with good ejection stability and good signal response was performed, and a high quality image was obtained. I was able to do it. Further, the durability in use in this device was also good.

(Examples B-c-2 to B-c-5) Example B- except that the area ratio of each raw material in the sputtering target was variously changed as shown in Table 4 when the heating resistor was formed. A device (inkjet head substrate) and an inkjet head were produced in the same manner as in c-1. Table 4 shows the evaluation results of the obtained devices in the same manner as in Example B-c-1. In addition, the inkjet heads produced using these devices all had good recording characteristics and durability.

(Examples B-c-6 to B-c-10) For inkjet heads prepared in the same manner as the substrates for inkjet heads prepared in Examples B-c-1 to B-c-5, respectively. The above-mentioned FIG.
The SiO ₂ protective layer having a thickness of 1.0 μm is provided by sputtering SiO ₂ by using the sputtering apparatus described above, and Ta is sputtered on the SiO ₂ protective layer to form a Ta protective layer having a thickness of 0.5 μm. An inkjet head substrate and an inkjet head were manufactured in the same manner as in each of the examples except for providing them.

An evaluation test was performed on the obtained ink jet head substrate and ink jet head in the same manner as in Example Bc-1. As a result, an immersion test in ink ( The result of the durability test by the pond test) was improved little by little for the low conductivity ink and the high conductivity ink. However, M of SST
It became smaller overall.

From the above, by providing the protective layer,
It can be seen that the durability is improved.

The M of SST was decreased because the heat conduction efficiency to the ink was lowered by providing the protective layer, and thus the foaming threshold voltage (V _th ) which is the denominator of M was increased. Imagined.

(Comparative Example Bc-1) Example Bc except that the area ratio of each raw material in the sputtering target was variously changed as shown in Table 4 at the time of forming the heating resistor.
A device (inkjet head substrate) and an inkjet head were produced in the same manner as in -1. Table 4 shows the evaluation results of the obtained devices in the same manner as in Example B-c-1.

(Comparative Examples B-c-2 to B-c-4) Ta was used as a sputtering target when the heating resistor was formed.
A device (inkjet head substrate) and a device (inkjet head substrate) were prepared in the same manner as in Example B-c-1, except that an Os sheet was provided on the target and the area ratio of each raw material in the sputtering target was changed as shown in Table 4. An inkjet head was produced. Table 4 shows the evaluation results of the obtained devices in the same manner as in Example B-c-1.

(Comparative Examples B-c-5 to B-c-8) Ta was used as a sputtering target when the heating resistor was formed.
A device (inkjet head substrate) was prepared in the same manner as in Example B-c-1, except that an Ir sheet was provided on the target and the area ratio of each raw material in the sputtering target was changed as shown in Table 4. An inkjet head was produced. Table 4 shows the evaluation results of the obtained devices in the same manner as in Example B-c-1.

(Comparative Example B-c-9) A device (ink jet head substrate) and an inkjet printer were prepared in the same manner as in Example B-c-1 except that a Ta target was used as a sputtering target when the heating resistor was formed. A head was produced. Table 4 shows the evaluation results of the obtained devices in the same manner as in Example B-c-1.

[Examples Corresponding to Aspect B-d] (Examples B-d-1) One Si single crystal substrate (manufactured by Wacker) and a 2.5 μm thick SiO ₂ film formed on the surface. A Si single crystal substrate (manufactured by Wacker Co., Ltd.) is set on the substrate holder 602 in the film forming chamber 601 of the above-described high frequency sputtering apparatus shown in FIG. 6 as a sputtering substrate 603 for sputtering, and 99. Co-sputtering under the following conditions using a composite target in which Ir target 607 and Re target 620, which are Ir sheets of similar purity, are placed on Ta target 606, which is a high-purity raw material of 9% by weight or more. About 200
An alloy layer having a thickness of 0Å was formed.

Co-sputtering conditions Target area ratio Ta: Re: Ir = 25: 36:
39 Target area 5 inch (127 mm) φ High frequency power 1000 W Deposition time 12 minutes Substrate setting temperature 50 ° C. Base pressure 2.6 × 10 ⁻⁴ Pa or less Sputtering gas pressure 0.4 Pa (Argon) Furthermore, on the substrate with SiO ₂ film As for the formed film, the target is made of only Al, and the Al layer to be the electrodes 104 and 105 (see FIG. 1) is formed on the alloy layer by sputtering in a layer thickness of 6000Å according to a conventional method. The sputtering was completed.

After that, a photoresist is formed twice in a predetermined pattern by photolithography, and once a photoresist is formed.
Wet etching of the 1-layer, the second heating resistance layer is dry-etched by ion milling for the second time, and the heating resistor 103 and the electrode 1 having the shapes shown in FIGS. 1B and 2A are formed.
04, 105 were formed. The size of the heat generating part is 30 μm ×
170 μm, the pitch of the heat generating portions was 125 μm, and 24 heat generating portions were arranged in a line to form one group, and a plurality of this group were formed on the SiO ₂ film substrate.

Next, an SiO ₂ film is formed on this by sputtering, and thereafter, this SiO ₂ film is covered with electrodes of 10 μm on both sides of the heat generating portion by using photolithography technology and reactive ion etching. To form a protective layer 106. Heat generation part 10
The size of 9 is 30 μm × 150 μm.

The manufactured product in such a state was subjected to a cutting process for each group to prepare a large number of ink jet head substrates, and a part of them was subjected to the evaluation test described later. Table 5 shows the evaluation results of the obtained devices (inkjet head substrates) in the same manner as in Example A-1.

Another part is shown in FIG. 1 (a) and FIG.
In order to form the ejection port 108 and the liquid path 111 shown in (b), a glass grooved plate 107 was joined to obtain an inkjet head.

When these ink jet heads thus obtained were mounted on a recording apparatus having a known structure and a recording operation was performed, recording with good ejection stability and good signal response was performed, and a high quality image was obtained. I was able to do it. Further, the durability in use in this device was also good.

(Examples B-d-2 to B-d-5) Example B-d-2 except that the area ratio of each raw material in the sputtering target was variously changed as shown in Table 5 when the heating resistor was formed. A device (inkjet head substrate) and an inkjet head were prepared in the same manner as d-1. Table 5 shows the evaluation results of the obtained devices in the same manner as in Example Bd-1. In addition, the inkjet heads produced using these devices all had good recording characteristics and durability.

(Examples Bd-6 to Bd-10) For inkjet heads prepared in the same manner as the inkjet head substrate prepared in Examples Bd-1 to Bd-5. The above-mentioned FIG.
The SiO ₂ protective layer having a thickness of 1.0 μm is provided by sputtering SiO ₂ by using the sputtering apparatus described above, and Ta is sputtered on the SiO ₂ protective layer to form a Ta protective layer having a thickness of 0.5 μm. An inkjet head substrate and an inkjet head were manufactured in the same manner as in each of the examples except for providing them.

An evaluation test was performed on the obtained ink jet head substrate and ink jet head in the same manner as in Example Bd-1. As a result, an ink immersion test ( The result of the durability test by the pond test) was improved little by little for the low conductivity ink and the high conductivity ink. However, M of SST
It became smaller overall.

As described above, by providing the protective layer,
It can be seen that the durability is improved.

The M of SST was reduced because the heat conduction efficiency to the ink was lowered by providing the protective layer, and thus the foaming threshold voltage (V _th ) which is the denominator of M was increased. Imagined.

(Comparative Examples B-d-1 to B-d-3) Example B- except that the area ratio of each raw material in the sputtering target was variously changed as shown in Table 5 at the time of forming the heating resistor. A device (inkjet head substrate) and an inkjet head were prepared in the same manner as d-1. Table 5 shows the evaluation results of the obtained devices in the same manner as in Example Bd-1.

(Comparative Example B-d-B-d-4) At the time of forming the heating resistor, a sputtering target provided with a Re sheet on a Ta target was used, and the area ratio of each raw material in the sputtering target was set to 5th. A device (ink jet head substrate) and an ink jet head were produced in the same manner as in Example B-d-1 except for the changes as shown in the table. For each device obtained,
Table 5 shows the evaluation results obtained in the same manner as in Example B-d-1.

(Comparative Examples Bd-5 to Bd-8) Ta was used as a sputtering target when the heating resistor was formed.
A device (substrate for inkjet head) and a device (inkjet head substrate) were prepared in the same manner as in Example B-d-1, except that an Ir sheet was provided on the target and the area ratio of each raw material in the sputtering target was changed as shown in Table 5. An inkjet head was produced. Table 5 shows the evaluation results of the obtained devices in the same manner as in Example Bd-1.

(Comparative Example Bd-9) A device (inkjet head substrate) and an inkjet head were prepared in the same manner as in Example Bd-1 except that a Ta target was used as a sputtering target when the heating resistor was formed. It was made. For each of the obtained devices, Example B-
Table 5 shows the evaluation results obtained in the same manner as in d-1.

[Example Corresponding to Aspect C] (Example C-1) One Si single crystal substrate (manufactured by Wacker) and one Si single crystal having a 2.5 μm thick SiO ₂ film formed on its surface. A crystal substrate (manufactured by Wacker) is set as a sputtering substrate 603 for sputtering on the substrate holder 602 in the film forming chamber 601 of the above-described high frequency sputtering apparatus shown in FIG. 6, and 99.9% by weight or more. Co-sputtering is performed under the following conditions using a composite target in which an Ir target 607, which is an Ir sheet having a similar purity, and a Y target 620 are placed on an Al target 606, which is a high-purity raw material of
An alloy layer having a thickness of Å was formed.

Co-sputtering conditions Target area ratio Al: Y: Ir = 25: 10: 6
5 Target area 5 inches (127 mm) φ High frequency power 1000 W Substrate setting temperature 50 ° C. Deposition time 12 minutes Base pressure 2.6 × 10 ⁻⁴ Pa or less Sputtering gas pressure 0.4 Pa (Argon) Furthermore, on the substrate with SiO ₂ film As for the formed film, the target is made of only Al, and the Al layer to be the electrodes 104 and 105 (see FIG. 1) is formed on the alloy layer by sputtering in a layer thickness of 6000Å according to a conventional method. The sputtering was completed.

After that, a photoresist is formed into a predetermined pattern twice by photolithography, and once a photoresist is formed.
Wet etching of the 1-layer, the second heating resistance layer is dry-etched by ion milling for the second time, and the heating resistor 103 and the electrode 1 having the shapes shown in FIGS. 1B and 2A are formed.
04, 105 were formed. The size of the heat generating part is 30 μm ×
170 μm, the pitch of the heat generating portions was 125 μm, and 24 heat generating portions were arranged in a line to form one group, and a plurality of this group were formed on the SiO ₂ film substrate.

Next, a SiO ₂ film is formed on this by sputtering, and thereafter, this SiO ₂ film is covered with electrodes of 10 μm on both sides of the heat generating portion by using photolithography technology and reactive ion etching. To form a protective layer 106. Heat generation part 10
The size of 9 is 30 μm × 150 μm.

The above-prepared product was cut into groups to prepare a large number of inkjet head substrates, and a part of the substrates was subjected to the evaluation test described below. Table 6 shows the evaluation results of the obtained devices (inkjet head substrates) in the same manner as in Example A-1.

In another part, FIG. 1 (a) and FIG.
In order to form the ejection port 108 and the liquid path 111 shown in (b), a glass grooved plate 107 was joined to obtain an inkjet head.

When these ink jet heads thus obtained were mounted on a recording apparatus having a known structure and a recording operation was performed, recording with good ejection stability and good signal response was performed, and a high quality image was obtained. I was able to do it. Further, the durability in use in this device was also good.

Examples C-2 to C-5 Example C except that the area ratio of each raw material in the sputtering target was changed variously as shown in Table 6 at the time of forming the heating resistor.
A device (inkjet head substrate) and an inkjet head were produced in the same manner as in -1. Table 6 shows the evaluation results of the obtained devices in the same manner as in Example C-1. In addition, the inkjet heads produced using these devices all had good recording characteristics and durability.

(Examples C-6 to C-10) Example C-1
To C-5, SiO ₂ is sputtered on the layer of the heating resistor of the inkjet head substrate manufactured in the same manner as the inkjet head substrate manufactured in C-5 using the above-described sputtering apparatus of FIG. As a result, a SiO ₂ protective layer with a thickness of 1.0 μm is provided.
An inkjet head substrate and an inkjet head were manufactured in the same manner as in each of the examples except that a Ta protective layer having a thickness of 0.5 μm was provided by sputtering Ta on the iO ₂ protective layer.

An evaluation test was conducted on the obtained ink jet head substrate and ink jet head in the same manner as in Example C-1. As a result, as compared with the example in which the protective layer was not provided, an ink immersion test (pond test) was performed. The result of the durability test by (3) was improved little by little for the low conductivity ink and the high conductivity ink. However, the M of SST became smaller overall.

From the above, by providing the protective layer,
It can be seen that the durability is improved.

The M of SST was reduced because the heat conduction efficiency to the ink was lowered by providing the protective layer, and thus the foaming threshold voltage (V _th ) which is the denominator of M was increased. Imagined.

(Comparative Examples C-1 to C-4) Example C except that the area ratio of each raw material in the sputtering target was variously changed as shown in Table 6 when the heating resistor was formed.
A device (inkjet head substrate) and an inkjet head were produced in the same manner as in -1. Table 6 shows the evaluation results of the obtained devices in the same manner as in Example C-1.

(Comparative Examples C-5 to C-10) At the time of forming the heating resistor, a sputtering target in which an Ir sheet was provided on an Al target was used, and the area ratio of each raw material in the sputtering target is shown in Table 6. A device (ink jet head substrate) and an ink jet head were produced in the same manner as in Example C-1 except for the above changes. Table 6 shows the evaluation results of the obtained devices in the same manner as in Example C-1.

[Example Corresponding to Aspect D] (Example D-1) One Si single crystal substrate (manufactured by Wacker) and one Si single crystal having a 2.5 μm thick SiO ₂ film formed on its surface. A crystal substrate (manufactured by Wacker) is set as a sputtering substrate 603 for sputtering on the substrate holder 602 in the film forming chamber 601 of the above-described high frequency sputtering apparatus shown in FIG. 6, and 99.9% by weight or more. Co-sputtering was performed under the following conditions using a composite target in which the Ir target 607 and the Ru target 620, which are Ir sheets of similar purity, were placed on the Cr target 606, which is a high-purity raw material of
An alloy layer having a thickness of Å was formed.

Co-sputtering conditions Target area ratio Cr: Ru: Ir = 31: 35:
35 Target area 5 inch (127 mm) φ High frequency power 1000 W Film formation time 12 minutes Substrate setting temperature 50 ° C. Base pressure 2.6 × 10 ⁻⁴ Pa or less Sputtering gas pressure 0.4 Pa (Argon) Furthermore, on the substrate with SiO ₂ film As for the formed film, the target is made of only Al, and the Al layer to be the electrodes 104 and 105 (see FIG. 1) is formed on the alloy layer by sputtering in a layer thickness of 6000Å according to a conventional method. The sputtering was completed.

After that, a photoresist is formed into a predetermined pattern twice by photolithography, and once a photoresist is formed.
Wet etching of the 1-layer, the second heating resistance layer is dry-etched by ion milling for the second time, and the heating resistor 103 and the electrode 1 having the shapes shown in FIGS. 1B and 2A are formed.
04, 105 were formed. The size of the heat generating part is 30 μm ×
170 μm, the pitch of the heat generating portions was 125 μm, and 24 heat generating portions were arranged in a line to form one group, and a plurality of this group were formed on the SiO ₂ film substrate.

Next, a SiO ₂ film is formed on this by sputtering, and thereafter, this SiO ₂ film is covered with electrodes of 10 μm on both sides of the heat generating portion by using photolithography technology and reactive ion etching. To form a protective layer 106. Heat generation part 10
The size of 9 is 30 μm × 150 μm.

The manufactured product in such a state was subjected to a cutting process for each group to manufacture a large number of inkjet head substrates, and a part of the substrates was subjected to the evaluation test described below. Table 7 shows the evaluation results of the obtained devices (inkjet head substrates) in the same manner as in Example A-1.

In another part, FIG. 1 (a) and FIG.
In order to form the ejection port 108 and the liquid path 111 shown in (b), a glass grooved plate 107 was joined to obtain an inkjet head.

When these ink jet heads thus obtained were mounted on a recording apparatus having a known structure and a recording operation was performed, recording with good ejection stability and good signal response was performed, and high quality images were obtained. I was able to do it. Further, the durability in use in this device was also good.

Examples D-2 to D-5 Example D except that the area ratio of each raw material in the sputtering target was variously changed as shown in Table 7 when the heating resistor was formed.
A device (inkjet head substrate) and an inkjet head were produced in the same manner as in -1. Table 7 shows the evaluation results of the obtained devices in the same manner as in Example D-1. In addition, the inkjet heads produced using these devices all had good recording characteristics and durability.

(Examples D-6 to D-10) Example D-1
To D-5, SiO ₂ is sputtered on the heating resistor layer of the inkjet head substrate manufactured in the same manner as the inkjet head substrate manufactured in D-5 by using the above-described sputtering apparatus of FIG. As a result, a SiO ₂ protective layer with a thickness of 1.0 μm is provided.
An inkjet head substrate and an inkjet head were prepared in the same manner as in each of the examples except that a Cr protective layer having a thickness of 0.5 μm was provided by sputtering Ta on the iO ₂ protective layer.

An evaluation test was carried out on the obtained ink jet head substrate and ink jet head in the same manner as in Example D-1. As a result, as compared with the example in which the protective layer was not provided, the ink immersion test (pond test The result of the durability test by (3) was improved little by little for the low conductivity ink and the high conductivity ink. However, the M of SST became smaller overall.

As described above, by providing the protective layer,
It can be seen that the durability is improved.

Note that the M of SST was decreased because the heat conduction efficiency to the ink was lowered by providing the protective layer, and thus the foaming threshold voltage (V _th ) which is the denominator of M was increased. Imagined.

(Comparative Example D-1) At the time of forming the heating resistor,
R on a Cr target as a sputtering target
A device (ink jet head substrate) and an ink jet head were produced in the same manner as in Example D-1 except that the area ratio of each raw material in the sputtering target was changed as shown in Table 7 using the u sheet provided. ..

For each of the obtained devices, Example D-
Table 7 shows the evaluation results obtained in the same manner as in 1.

(Comparative Example D-2) At the time of forming the heating resistor,
I on Cr target as sputtering target
A device (ink jet head substrate) and an ink jet head were produced in the same manner as in Example D-1 except that the area ratio of each raw material in the sputtering target was changed as shown in Table 7 using the r sheet provided. ..

For each of the obtained devices, Example D-
Table 7 shows the evaluation results obtained in the same manner as in 1.

(Comparative Example D-3) At the time of forming the heating resistor,
A device (ink jet head substrate) and an ink jet head were produced in the same manner as in Example D-1 except that a Cr target was used as the sputtering target.

For each of the obtained devices, Example D-
Table 7 shows the evaluation results obtained in the same manner as in 1. [Example Corresponding to Aspect E] (Example E-1) One S
i single crystal substrate (Wacker) and 2.5 μm thick SiO
A substrate holder in the film forming chamber 601 of the above-described high-frequency sputtering apparatus shown in FIG. 6 is used as a sputtering substrate 603 for sputtering a single Si single crystal substrate (Wacker) having _two films formed on its surface. Using a composite target in which two Pt targets 607, which are Pt sheets having the same degree of purity, are set on the Ta target 606 which is a high-purity raw material having a purity of 99.9% by weight or more, Co-sputtering under conditions of about 20
An alloy layer having a thickness of 00Å was formed.

Co-sputtering conditions Target area ratio Ta: Pt = 28: 72 Target area 5 inches (127 mm) φ High frequency power 1000 W Film formation time 12 minutes Substrate setting temperature 50 ° C. Base pressure 2.6 × 10 ⁻⁴ Pa or less Sputtering gas pressure 0.4 Pa (argon) Further, for the film formed on the substrate with the SiO ₂ film, the Al layer to be the electrodes 104 and 105 (see FIG. 1) is continuously switched to the target containing only Al and is formed on the alloy layer. Was formed to a layer thickness of 6000Å by sputtering according to a conventional method, and the sputtering was completed.

Then, a photoresist is formed into a predetermined pattern twice by photolithography, and A
Wet etching of the 1-layer, the second heating resistance layer is dry-etched by ion milling for the second time, and the heating resistor 103 and the electrode 1 having the shapes shown in FIGS. 1B and 2A are formed.
04, 105 were formed. The size of the heat generating part is 30 μm ×
170 μm, the pitch of the heat generating portions was 125 μm, and 24 heat generating portions were arranged in a row to form one group, and a plurality of the groups were formed on the SiO ₂ film-coated substrate.

Next, an SiO ₂ film is formed on this by sputtering, and thereafter, this SiO ₂ film is covered with electrodes of 10 μm on both sides of the heat generating portion by using photolithography and reactive ion etching. To form a protective layer 106. Heat generation part 10
The size of 9 is 30 μm × 150 μm.

The above-prepared product was cut into groups to prepare a large number of inkjet head substrates, and a part of the substrates was subjected to the evaluation test described below. Table 8 shows the evaluation results of the obtained devices (inkjet substrate) in the same manner as in Example A-1.

In another part, FIG. 1 (a) and FIG.
In order to form the ejection port 108 and the liquid path 111 shown in (b), a glass grooved plate 107 was joined to obtain an inkjet head.

When these ink jet heads thus obtained were mounted on a recording apparatus having a known structure and a recording operation was performed, recording with good ejection stability and good signal response was performed, and high quality images were obtained. I was able to do it. Further, the durability in use in this device was also good.

Examples E-2 to E-3 Example E except that the area ratio of each raw material in the sputtering target was variously changed as shown in Table 8 when the heating resistor was formed.
A device (inkjet head substrate) and an inkjet head were produced in the same manner as in -1. Table 8 shows the evaluation results of the obtained devices in the same manner as in Example E-1. In addition, the inkjet heads produced using these devices all had good recording characteristics and durability.

(Examples E-4 to E-6) Examples E-1 to E-6
Sputtering SiO ₂ on the heating resistor layer of the inkjet head substrate manufactured in the same manner as the inkjet head substrate manufactured in E-3, using the above-described sputtering apparatus of FIG. To provide a SiO ₂ protective layer with a thickness of 1.0 μm.
An inkjet head substrate and an inkjet head were produced in the same manner as in each of the examples except that a Ta protective layer having a thickness of 0.5 μm was provided by sputtering Ta on the O ₂ protective layer.

An evaluation test was carried out on the obtained ink jet head substrate and ink jet head in the same manner as in Example E-1. As a result, as compared with the example in which the protective layer was not provided, the ink immersion test (pond test The result of the durability test by (3) was improved little by little for the low conductivity ink and the high conductivity ink. Further, the resistance change was smaller than that in the example in which the protective layer was not provided. However, the M of SST became smaller overall.

From the above, by providing the protective layer,
It can be seen that the durability and the resistance change mainly due to the electrochemical reaction are improved.

Note that the M of SST was decreased because the heat conduction efficiency to the ink was lowered by providing the protective layer, so that the foaming threshold voltage (V _th ) which is the denominator of M was increased. Imagined.

(Comparative Examples E-1 to E-3) Example E except that the area ratio of each raw material in the sputtering target was variously changed as shown in Table 8 when the heating resistor was formed.
A device (inkjet head substrate) and an inkjet head were produced in the same manner as in -1.

About each of the obtained devices, Example E-
Table 8 shows the evaluation results obtained in the same manner as 1.

(Comparative Example E-4) At the time of forming the heating resistor,
A device (inkjet head substrate) and an inkjet head were produced in the same manner as in Example E-1 except that a Pt target was used as the sputtering target.

For each of the obtained devices, Example E-
Table 8 shows the evaluation results obtained in the same manner as 1.

(Comparative Example E-5) At the time of forming the heating resistor,
A device (inkjet head substrate) and an inkjet head were produced in the same manner as in Example E-1 except that a Ta target was used as the sputtering target.

About each of the obtained devices, Example E-
Table 8 shows the evaluation results obtained in the same manner as 1.

In the same manner as in the various examples corresponding to the above-described modes A to E, the ink jet head substrate and the ink jet head in which the heating resistor is composed of the materials proposed in Document 1 and Document 2 are prepared. did.

An evaluation test was carried out on the obtained ink jet head substrate and ink jet head in the same manner as in Example A-1. As a result, as compared with various examples corresponding to the modes A to E, immersion in ink was performed. The result of the durability test by the test (pond test) was inferior for both the low conductivity ink and the high conductivity ink. Also, M of SST
Was also inferior about. That is, the example of the present invention was superior to the complementary comparative example in terms of durability as a whole by about 1.2 times.

From the above, when driving is performed with a drive pulse having a relatively long width (20 μs in the above-mentioned Examples and Comparative Examples), the heating resistors are made of the materials proposed in References 1 and 2. It can be seen that the embodiment of the present invention is more excellent in durability than the inkjet head substrate and the inkjet head.
Incidentally, the present invention can be applied to a recording head and a recording apparatus of a system of ejecting ink by using an electromechanical transducer such as a piezo element as long as it is an inkjet recording system. The present invention is applied to a recording head and a recording apparatus of a type that ejects ink by using a method of ejecting ink to obtain excellent effects. This is because such a system can achieve high density recording and high definition recording.

Regarding its typical structure and principle, see, for example, US Pat. Nos. 4,723,129 and 4740.
What is done using the basic principles disclosed in 796 is preferred. This method can be applied to both the so-called on-demand type and continuous type, but especially in the case of the on-demand type, a liquid (ink) is used.
By applying at least one drive signal that corresponds to the recorded information and gives a rapid temperature rise exceeding nucleate boiling, to the electrothermal converter arranged corresponding to the sheet or liquid path in which is held, This is effective because heat energy is generated in the electrothermal converter to cause film boiling on the heat acting surface of the recording head, and as a result, bubbles can be formed in the liquid (ink) in a one-to-one correspondence with this drive signal. The liquid (ink) is ejected through the ejection openings by the growth and contraction of the bubbles to form at least one droplet. It is more preferable to make this drive signal into a pulse shape, because the bubble growth and contraction are immediately and appropriately performed, so that the ejection of the liquid (ink) with excellent responsiveness can be achieved. As the pulse-shaped drive signal, U.S. Pat. Nos. 4,463,359 and 43,
Those as described in 45262 are suitable. If the conditions described in US Pat. No. 4,313,124 of the invention relating to the rate of temperature rise on the heat acting surface are adopted, more excellent recording can be performed.

As the constitution of the recording head, in addition to the combination constitution of the discharge port, the liquid passage, and the electrothermal converter (the linear liquid passage or the right-angled liquid passage) as disclosed in the above-mentioned respective specifications, US Pat. No. 4,558,333 and US Pat. No. 4, which disclose a configuration in which a heat acting portion is arranged in a bending region
The structure using the specification of 459600 is also included in the present invention. In addition, Japanese Laid-Open Patent Publication No. 123670/1984 discloses a configuration in which a common slit is used as a discharge portion of a plurality of electrothermal converters, and an opening for absorbing a pressure wave of thermal energy. The present invention is also effective as a configuration based on JP-A-59-138461, which discloses a configuration that corresponds to the discharge portion.

Further, as a full-line type recording head having a length corresponding to the width of the maximum recording medium which can be recorded by the recording apparatus, a combination of a plurality of recording heads as disclosed in the above-mentioned specification is used. It may have either a structure satisfying the length or a structure as one recording head integrally formed, but the present invention can more effectively exhibit the above-mentioned effects.

In addition, by being attached to the apparatus main body, it can be electrically connected to the apparatus main body and can be supplied with ink from the apparatus main body by a replaceable chip type recording head or the recording head itself. The present invention is also effective when a cartridge-type recording head that is specially provided is used.

Further, it is preferable to add recovery means for the recording head, preliminary auxiliary means, etc., which are provided as the constitution of the recording apparatus of the present invention, because the effect of the present invention can be further stabilized. Specific examples thereof include capping means, cleaning means, pressurizing or suctioning means, electrothermal converters or heating elements other than these, or preheating means for the recording head. ,
It is also effective to perform stable recording by performing a preliminary discharge mode in which discharge different from recording is performed.

Further, the recording mode of the recording apparatus is not limited to the recording mode of only the mainstream color such as black, but the recording head may be integrally formed or a plurality of combinations may be used. The present invention is also extremely effective for a device provided with at least one of full color by color mixing.

In the embodiments of the present invention described above, the liquid ink is used. However, in the present invention, even an ink which is solid at room temperature is an ink which is in a softened state at room temperature. Can also be used. In the above-mentioned inkjet device, the temperature of the ink itself is 30 ° C. or higher and 70
The viscosity of the ink is generally controlled to be in a stable ejection range by adjusting the temperature within the range of ℃ or less.
Therefore, in such an ink jet device, a liquid ink may be used when the device to which the recording signal is applied is used. In addition, in order to prevent the head temperature from rising due to thermal energy by positively using thermal energy as energy for changing the state of the ink from the solid state to the liquid state, or by solidifying the ink while it is left standing In order to prevent the evaporation of the ink, heat energy such as that in which the ink is liquefied and ejected in a liquid state by applying heat energy in response to the recording signal, or the one which has already started to solidify when it reaches the recording medium is used. Inks that have the property of liquefying only by energy can also be used in the present invention.
Such an ink is held as a liquid or solid in the recesses or through holes of the porous sheet as described in JP-A-54-56847 or JP-A-60-71260, and this ink is retained. You may arrange | position as a form which opposes an electrothermal converter. In the present invention, the most effective ejection method for each ink described above is the film boiling method described above.

As described above, according to the present invention, the heating resistor is made of the non-single-crystal substance containing Ir and the specific one element or Ir and the specific two elements in the specific composition ratio. Resistance to cavitation impact,
Improved inkjet head with excellent resistance to erosion due to cavitation, mechanical durability, chemical stability, electrochemical stability, resistance stability, heat resistance, oxidation resistance, dissolution resistance and thermal shock resistance. Can be obtained.

Further, according to the present invention, even if it is repeatedly used for a long time, the thermal energy is always stable and immediately responds to the on-demand signal to efficiently transfer the heat energy to the recording liquid (ink) to eject the ink. By doing so, it is possible to obtain an improved ink jet head that brings an excellent recorded image.

Further, according to the present invention, the heating resistor has a structure which is in direct contact with the recording liquid and has excellent thermal conductivity, the power consumption by the heating resistor is kept low, and the temperature change of the ink jet head. It is possible to obtain an improved inkjet head in which the ink is ejected at a stable level even when it is repeatedly used for a long time and the resulting image does not change in density due to temperature change of the inkjet head. ..

In addition, according to the present invention, a driving pulse having a relatively long width can be used while utilizing the advantage of Ir which can easily exhibit superiority in terms of heat resistance, oxidation resistance, chemical stability and the like. It is possible to obtain an inkjet head having a heating resistor made of a material that exhibits sufficient durability even when it is driven.

Furthermore, according to the present invention, it is possible to obtain an improved ink jet head substrate for forming the above ink jet head, and an improved ink jet apparatus having the above ink jet head.

[0296]

[Table 1]

[0297]

[Table 2]

[0298]

[Table 3]

[0299]

[Table 4]

[0300]

[Table 5]

[0301]

[Table 6]

[0302]

[Table 7]

[0303]

[Table 8]

[Brief description of drawings]

FIG. 1A is a schematic front view of an example of an inkjet head of the present invention as seen from a discharge port side, and FIG.
It is an XY sectional view in (a).

FIG. 2A is a schematic plan view of a substrate for an inkjet head at a stage where a heating resistor layer and electrodes are provided, and FIG. 2B is a plan view showing a protective layer provided on these layers. FIG. 3 is a schematic plan view of the inkjet head substrate at different stages.

FIG. 3 is a cross-sectional view showing a main part configuration of another example of the inkjet head of the present invention.

FIG. 4 (a) is a schematic top view of another example of the inkjet head of the present invention, and FIG. 4 (b) shows A- in FIG.
It is a B sectional view.

FIG. 5 is an external perspective view showing an example of an inkjet device according to the present invention.

FIG. 6 is a schematic cross-sectional view showing an example of a high-frequency sputtering apparatus used for producing a film such as a heating resistor according to the present invention.

FIG. 7 is a diagram showing a composition range of materials forming a heating resistor according to the present invention.

FIG. 8 is a diagram showing a composition range of a material forming the heating resistor according to the present invention.

FIG. 9 is a diagram showing a composition range of a material forming the heating resistor according to the present invention.

FIG. 10 is a diagram showing a composition range of materials constituting the heating resistor according to the present invention.

FIG. 11 is a diagram showing a composition range of materials constituting the heating resistor according to the present invention.

FIG. 12 is a diagram showing a composition range of materials forming the heating resistor according to the present invention.

FIG. 13 is a diagram showing a composition range of materials forming a heating resistor according to the present invention.

FIG. 14 is a diagram showing a composition range of materials forming the heating resistor according to the present invention.

[Explanation of symbols]

 101, 301, 603 Substrate 102, 302 Lower layer 103, 303 Heating resistor layer 104, 105, 304, 305 Electrode 106 Protective layer 107 Grooved plate 108 Discharge port 109, 309 Thermal action surface 410 Discharge port plate 412 Support member 601 Deposition chamber 602 Substrate holder 603 Substrate 604 Shutter plate 605 Target holder 606 Ti target 607 Ir target 608 Rotating shaft 609 Insulator 610 Exhaust pipe 611 Exhaust pump 612 Gas supply pipe 613 Flow control valve 614 Matching box 615 RF power supply 616, 617 618 Protective wall 619 Vacuum gauge 620 Ta target 5000 Platen 5002 Paper retainer plate 5004 Spiral groove 5005 Lead screw 5006 Lever 5007,5008 Photo Plastic 5009,5011 driving force transmission gears 5013 drive motor 5015 sucking means 5016 home position detection means 5017 a cleaning blade 5018 main body support plate 5019 member 5020 cam 5022 cap member 5023 capping the opening

 ─────────────────────────────────────────────────── ─── Continuation of front page (31) Priority claim number Japanese Patent Application No. 3-194032 (32) Priority date Hei 3 (1991) August 2 (33) Priority claiming country Japan (JP) (31) Priority Claim number Japanese Patent Application No. 3-194034 (32) Priority Date No. 3 (1991) August 2 (33) Country of priority claim Japan (JP) (31) Priority claim number Japanese Patent Application No. 3-194035 (32) Priority Hihei 3 (1991) August 2 (33) Priority claiming country Japan (JP) (31) Priority claim number Japanese Patent Application No. 3-194036 (32) Priority Day Hei 3 (1991) August 2 (33) ) Japan claiming priority (JP) (31) Claim number for priority claim Japanese Patent Application No. 3-194037 (32) Priority date 3 (1991) August 2 (33) Country claiming priority Japan (JP) (72) Inventor Isao Kimura 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc.

Claims (272)

[Claims] 1. An ink jet head having an electrothermal converter having a heating resistor for generating heat energy by directly applying heat energy to the ink on the heat acting surface to discharge the ink. In the substrate, the heat generating resistor is made of a material containing at least Ir and Cr in the following composition ratio, and a substrate for an inkjet head. 24 atomic% ≤ Ir ≤ 68 atomic% 32 atomic% ≤ Cr ≤ 76 atomic% 2. The ink jet head substrate according to claim 1, wherein the constituent material of the heating resistor is a non-single crystalline substance. 3. The inkjet head substrate according to claim 2, wherein the non-single crystalline material is a polycrystalline material. 4. The material forming the heating resistor contains at least one selected from the group consisting of Ar, O, C, N, Si, B, Na, Cl and Fe as an impurity. The inkjet head substrate as described above. 5. The ink jet head substrate according to claim 1, wherein the electrothermal converter has a pair of electrodes on the heating resistor for contacting the heating resistor to conduct the current. 6. The substrate for an ink jet head according to claim 1, wherein the electrothermal converter has a pair of electrodes under the heating resistor for contacting the heating resistor to conduct the current. 7. The ink jet head substrate according to claim 1, wherein the heat acting surface is formed by the heat generating resistor. 8. The ink jet head substrate according to claim 1, wherein the heat acting surface is formed by a protective layer on the heat generating resistor. 9. The ink jet head according to claim 8, wherein the protective layer has a Ta layer forming the heat acting surface, and a Si-containing insulating layer interposed between the Ta layer and the heating resistor. Substrate. 10. The heating resistor layer has a thickness of 300Å
The substrate for an inkjet head according to claim 1, wherein the substrate has a thickness of ˜1 μm. 11. The heating resistor layer has a thickness of 1000.
The inkjet head substrate according to claim 10, which has a thickness of Å to 5,000 Å. 12. An electrothermal converter having a heating resistor for generating thermal energy, which is used to eject thermal ink by directly applying thermal energy to the ink on the heat-acting surface, in the ink passage. In the inkjet head having the above, the heating resistor is made of a material containing at least Ir and Cr in the following composition ratio. 24 atomic% ≤ Ir ≤ 68 atomic% 32 atomic% ≤ Cr ≤ 76 atomic% 13. The ink jet head according to claim 12, wherein the constituent material of the heating resistor is a non-single crystalline substance. 14. The inkjet head according to claim 13, wherein the non-single crystalline material is a polycrystalline material. 15. The material forming the heating resistor contains at least one selected from the group consisting of Ar, O, C, N, Si, B, Na, Cl and Fe as an impurity. The described inkjet head. 16. The ink jet head according to claim 12, wherein the electrothermal converter has a pair of electrodes on the heating resistor for contacting the heating resistor to conduct the current. 17. The inkjet head according to claim 12, wherein the electrothermal converter has a pair of electrodes under the heating resistor for contacting the heating resistor to perform the energization. 18. The ink jet head according to claim 12, wherein the heat acting surface is formed by the heating resistor. 19. The ink jet head according to claim 12, wherein the heat acting surface is formed by a protective layer on the heating resistor. 20. The ink jet head according to claim 19, wherein the protective layer has a Ta layer forming the heat acting surface, and a Si-containing insulating layer interposed between the Ta layer and the heating resistor. .. 21. The thickness of the layer of the heating resistor is 300Å
The inkjet head according to claim 12, which has a thickness of ˜1 μm. 22. The thickness of the layer of the heating resistor is 1000.
The inkjet head according to claim 12, having a thickness of Å to 5,000 Å. 23. The direction of ejecting ink and the direction of supplying ink to the heat acting surface are substantially the same.
2. The inkjet head according to item 2. 24. The ink jet head according to claim 12, wherein a direction in which the ink is ejected and a direction in which the ink is supplied to the heat acting surface are substantially perpendicular to each other. 25. The ink jet head according to claim 12, wherein a plurality of ejection ports for ejecting ink are provided corresponding to the width of the recording area of the recording member. 26. The ink jet head according to claim 25, wherein a plurality of the discharge ports are provided, 1000 or more. 27. The ink jet head according to claim 26, wherein a plurality of the discharge ports, 2000 or more, are provided. 28. The inkjet head according to claim 12, wherein the functional element relating to ink ejection is structurally provided inside the surface of the inkjet head substrate. 29. The ink jet head according to claim 12, wherein the ink jet head is a cartridge type integrally provided with an ink tank for storing ink supplied to the heat acting surface. 30. An electrothermal converter provided with a heating resistor for generating the thermal energy, which is used to eject the ink by directly applying the thermal energy to the ink on the heat acting surface, and the electric heat. An ink jet device comprising means for applying a signal to a converter, wherein the heating resistor is made of a material containing at least Ir and Cr in the following composition ratio. 24 atomic% ≤ Ir ≤ 68 atomic% 32 atomic% ≤ Cr ≤ 76 atomic% 31. The inkjet device according to claim 30, which performs color recording. 32. The means for applying a signal to the electrothermal converter is a control circuit of an inkjet device.
The inkjet device according to 1. 33. The ink jet apparatus according to claim 30, further comprising a carriage for mounting a head having the electrothermal converter. 34. An ink jet head having an electrothermal converter provided with a heating resistor for directly applying heat energy to the ink on the heat acting surface to generate the heat energy for discharging the ink. In the substrate, the heating resistor is made of a material containing at least Ir, Ta, and Ti in the following composition ratio, and a substrate for an inkjet head. 46 atomic% ≤ Ir ≤ 78 atomic% 5 atomic% ≤ Ta ≤ 43 atomic% 10 atomic% ≤ Ti ≤ 38 atomic% 35. The ink jet head substrate according to claim 34, wherein the constituent material of the heating resistor is a non-single crystalline substance. 36. The inkjet head substrate according to claim 35, wherein the non-single crystalline material is a polycrystalline material. 37. The ink jet head substrate according to claim 35, wherein the non-single crystalline material is an amorphous material. 38. The material forming the heating resistor contains at least one selected from the group consisting of Ar, O, C, N, Si, B, Na, Cl and Fe as an impurity. The inkjet head substrate as described above. 39. The ink jet head substrate according to claim 34, wherein the electrothermal converter has a pair of electrodes on the heating resistor for contacting the heating resistor for conducting the current. 40. The ink jet head substrate according to claim 34, wherein the electrothermal converter has a pair of electrodes for contacting with the heating resistor and for conducting the current under the heating resistor. 41. The ink jet head substrate according to claim 34, wherein the heat acting surface is formed by the heat generating resistor. 42. The ink jet head substrate according to claim 34, wherein the heat acting surface is formed by a protective layer on the heat generating resistor. 43. The S protective layer is interposed between the Ta layer forming the heat acting surface and the Ta layer and the heating resistor.
The inkjet head substrate according to claim 42, further comprising an i-containing insulating layer. 44. The thickness of the layer of the heating resistor is 300Å
35. The inkjet head substrate according to claim 34, having a thickness of ˜1 μm. 45. The heating resistor layer has a thickness of 1000.
The inkjet head substrate according to claim 44, which has a thickness of Å to 5,000 Å. 46. An electrothermal converter having a heating resistor for generating heat energy by directly applying heat energy to the ink on the heat acting surface to discharge the ink is provided in the ink passage. An ink jet head having the above, wherein the heating resistor is made of a material containing at least Ir, Ta and Ti in the following composition ratios. 46 atomic% ≤ Ir ≤ 78 atomic% 5 atomic% ≤ Ta ≤ 43 atomic% 10 atomic% ≤ Ti ≤ 38 atomic% 47. The ink jet head according to claim 46, wherein a constituent material of the heating resistor is a non-single crystalline substance. 48. The ink jet head according to claim 47, wherein the non-single crystalline material is a polycrystalline material. 49. The ink jet head according to claim 47, wherein the non-single crystalline material is an amorphous material. 50. The material forming the heating resistor contains at least one selected from the group consisting of Ar, O, C, N, Si, B, Na, Cl and Fe as an impurity. The described inkjet head. 51. The ink jet head according to claim 46, wherein the electrothermal converter has a pair of electrodes on the heating resistor for contacting the heating resistor to conduct the current. 52. The ink jet head according to claim 46, wherein the electrothermal converter has a pair of electrodes under the heating resistor for contacting the heating resistor to conduct the current. 53. The ink jet head according to claim 46, wherein the heat acting surface is formed by the heat generating resistor. 54. The ink jet head according to claim 46, wherein the heat acting surface is formed by a protective layer on the heating resistor. 55. The ink jet head according to claim 54, wherein the protective layer has a Ta layer forming the heat acting surface and a Si-containing insulating layer interposed between the Ta layer and the heating resistor. .. 56. The heating resistor layer has a thickness of 300 Å
47. The inkjet head according to claim 46, which has a thickness of ˜1 μm. 57. The thickness of the heating resistor layer is 1000.
The inkjet head according to claim 56, which has a thickness of Å to 5,000 Å. 58. The direction of ejecting ink and the direction of supplying ink to the heat acting surface are substantially the same.
6. The inkjet head according to item 6. 59. The ink jet head according to claim 46, wherein a direction of ejecting ink and a direction of supplying ink to the heat acting surface are substantially perpendicular to each other. 60. The ink jet head according to claim 46, wherein a plurality of ejection ports for ejecting ink are provided corresponding to the width of the recording region of the recording member. 61. The ink jet head according to claim 60, wherein a plurality of the discharge ports is provided, which is 1000 or more. 62. The ink jet head according to claim 61, wherein a plurality of the discharge ports, 2000 or more, are provided. 63. The inkjet head according to claim 46, wherein the functional element relating to ink ejection is structurally provided inside the surface of the inkjet head substrate. 64. The ink jet head according to claim 46, which is a cartridge type integrally provided with an ink tank for storing ink supplied to the heat acting surface. 65. An electrothermal converter provided with a heating resistor for generating the thermal energy used for ejecting the ink by directly applying the thermal energy to the ink on the heat acting surface, and the electric heat. An inkjet device comprising a means for applying a signal to a converter, wherein the heating resistor is made of a material containing at least Ir, Ta and Ti in the following composition ratios. 46 atomic% ≤ Ir ≤ 78 atomic% 5 atomic% ≤ Ta ≤ 43 atomic% 10 atomic% ≤ Ti ≤ 38 atomic% 66. The inkjet device according to claim 65, which performs color recording. 67. The means for applying a signal to the electrothermal converter is a control circuit of an inkjet device.
The inkjet device according to 1. 68. The ink jet apparatus according to claim 65, further comprising a carriage for mounting a head having the electrothermal converter. 69. An ink jet head having an electrothermal converter provided with a heating resistor for generating heat energy by directly applying heat energy to the ink on the heat acting surface to discharge the ink. In the substrate, the heating resistor is made of a material containing at least Ir, Ru, and Ta in the following compositional ratio, and an inkjet head substrate. 10 atomic% ≦ Ir ≦ 67 atomic% 11 atomic% ≦ Ru ≦ 58 atomic% 18 atomic% ≦ Ta ≦ 63 atomic% 70. The inkjet head substrate according to claim 69, wherein the constituent material of the heating resistor is a non-single crystalline substance. 71. The inkjet head substrate according to claim 70, wherein the non-single crystalline material is a polycrystalline material. 72. The ink jet head substrate according to claim 70, wherein the non-single crystalline material is an amorphous material. 73. The material according to claim 69, wherein the material forming the heating resistor contains at least one selected from the group consisting of Ar, O, C, N, Si, B, Na, Cl and Fe as an impurity. The inkjet head substrate as described above. 74. The ink jet head substrate according to claim 69, wherein the electrothermal converter has a pair of electrodes on the heating resistor for contacting the heating resistor to conduct the current. 75. The inkjet head substrate according to claim 69, wherein the electrothermal converter has a pair of electrodes under the heating resistor for contacting with the heating resistor to perform the energization. 76. The inkjet head substrate according to claim 69, wherein the heat-acting surface is formed by the heating resistor. 77. The inkjet head substrate according to claim 69, wherein the heat-acting surface is formed by a protective layer on the heating resistor. 78. The inkjet head according to claim 69, wherein the protective layer has a Ta layer that forms the heat acting surface, and a Si-containing insulating layer that is interposed between the Ta layer and the heating resistor. Substrate. 79. The thickness of the layer of the heating resistor is 300Å
70. The inkjet head substrate according to claim 69, having a thickness of 1 μm. 80. The thickness of the heating resistor layer is 1000.
The inkjet head substrate according to claim 79, which has a thickness of Å to 5,000 Å. 81. An electrothermal converter having a heating resistor for generating thermal energy, which is used for ejecting ink by directly applying thermal energy to the ink on the heat acting surface, is provided in the ink passage. An inkjet head according to claim 1, wherein the heating resistor is made of a material containing at least Ir, Ru and Ta in the following composition ratios. 10 atomic% ≦ Ir ≦ 67 atomic% 11 atomic% ≦ Ru ≦ 58 atomic% 18 atomic% ≦ Ta ≦ 63 atomic% 82. The ink jet head according to claim 81, wherein a constituent material of the heating resistor is a non-single crystalline substance. 83. The ink jet head according to claim 82, wherein the non-single crystalline material is a polycrystalline material. 84. The inkjet head according to claim 82, wherein the non-single crystalline material is an amorphous material. 85. The material forming the heating resistor contains as an impurity at least one selected from the group consisting of Ar, O, C, N, Si, B, Na, Cl and Fe. The described inkjet head. 86. The ink jet head according to claim 81, wherein the electrothermal converter has a pair of electrodes on the heating resistor for contacting the heating resistor to conduct the current. 87. The ink jet head according to claim 81, wherein the electrothermal converter has a pair of electrodes for contacting with the heating resistor and for conducting the current under the heating resistor. 88. The ink jet head according to claim 81, wherein the heat acting surface is formed by the heat generating resistor. 89. The ink jet head according to claim 81, wherein the heat acting surface is formed by a protective layer on the heat generating resistor. 90. The ink jet head according to claim 89, wherein the protective layer has a Ta layer forming the heat acting surface and a Si-containing insulating layer interposed between the Ta layer and the heating resistor. .. 91. The thickness of the layer of the heating resistor is 300Å
82. The inkjet head according to claim 81, wherein the inkjet head has a thickness of ˜1 μm. 92. The thickness of the heating resistor layer is 1000.
The inkjet head according to claim 91, which has a thickness of Å to 5,000 Å. 93. The direction of ejecting ink and the direction of supplying ink to the heat acting surface are substantially the same.
1. The inkjet head according to 1. 94. The ink jet head according to claim 81, wherein the direction of ejecting the ink and the direction of supplying the ink to the heat acting surface are substantially perpendicular to each other. 95. The ink jet head according to claim 81, wherein a plurality of ejection ports for ejecting ink are provided corresponding to the width of the recording region of the recording member. 96. The ink jet head according to claim 95, wherein a plurality of the discharge ports are provided, which is 1000 or more. 97. The ink-jet head according to claim 96, wherein a plurality of the discharge ports are provided, 2000 or more. 98. The inkjet head according to claim 81, wherein the functional element relating to ink ejection is structurally provided inside the surface of the inkjet head substrate. 99. The inkjet head according to claim 81, which is a cartridge type integrally provided with an ink tank for storing ink supplied to the heat acting surface. 100. An electrothermal converter comprising a heating resistor for directly applying thermal energy to ink on a heat-acting surface to generate the thermal energy, which is used for ejecting the ink, and the electric heat. An inkjet device comprising a means for applying a signal to a converter, wherein the heating resistor is made of a material containing at least Ir, Ru and Ta in the following composition ratio. 10 atomic% ≦ Ir ≦ 67 atomic% 11 atomic% ≦ Ru ≦ 58 atomic% 18 atomic% ≦ Ta ≦ 63 atomic% 101. The inkjet device according to claim 100, which performs color recording. 102. The control circuit of an ink jet device, wherein the means for applying a signal to the electrothermal converter is a control circuit of an inkjet device.
Inkjet device according to item 00. 103. The inkjet apparatus according to claim 100, further comprising a carriage for mounting a head having the electrothermal converter. 104. An ink jet head having an electrothermal converter having a heating resistor for generating thermal energy by directly applying thermal energy to the ink on the thermal action surface to eject the ink. In the substrate, the heating resistor is made of a material containing at least Ir, Os, and Ta in the following composition ratio, wherein the substrate for an inkjet head is characterized. 17 atomic% ≤ Ir ≤ 73 atomic% 5 atomic% ≤ Os ≤ 58 atomic% 19 atomic% ≤ Ta ≤ 60 atomic% 105. The inkjet head substrate according to claim 104, wherein a constituent material of the heating resistor is a non-single crystalline substance. 106. The inkjet head substrate according to claim 105, wherein the non-single crystalline material is a polycrystalline material. 107. The inkjet head substrate according to claim 105, wherein the non-single crystalline material is an amorphous material. 108. The material forming the heating resistor is
Ar, O, C, N, Si, B, Na, Cl as impurities
105. The inkjet head substrate according to claim 104, containing at least one selected from the group consisting of: and Fe. 109. The inkjet head substrate according to claim 104, wherein the electrothermal converter has a pair of electrodes on the heating resistor for contacting with the heating resistor to conduct the current. 110. The inkjet head substrate according to claim 104, wherein the electrothermal converter has a pair of electrodes below the heating resistor for contacting the heating resistor to conduct the current. 111. The inkjet head substrate according to claim 104, wherein the heat-acting surface is formed by the heating resistor. 112. The inkjet head substrate according to claim 104, wherein the heat-acting surface is formed by a protective layer on the heating resistor. 113. The inkjet head according to claim 104, wherein the protective layer has a Ta layer forming the heat acting surface, and a Si-containing insulating layer interposed between the Ta layer and the heating resistor. Substrate. 114. The heating resistor layer has a thickness of 300.
105. The inkjet head substrate according to claim 104, having a thickness of Å to 1 μm. 115. The heating resistor layer has a thickness of 100.
105. The inkjet head substrate according to claim 104, which has a thickness of 0 to 5,000. 116. An electrothermal converter having a heating resistor for generating thermal energy, which is used to eject thermal ink by directly applying thermal energy to the ink on the heat acting surface, is provided in the ink passage. An ink jet head having the same, wherein the heating resistor is made of a material containing at least Ir, Os and Ta in the following composition ratios. 17 atomic% ≤ Ir ≤ 73 atomic% 5 atomic% ≤ Os ≤ 58 atomic% 19 atomic% ≤ Ta ≤ 60 atomic% 117. The inkjet head according to claim 116, wherein a constituent material of the heating resistor is a non-single crystalline substance. 118. The inkjet head of claim 117, wherein the non-single crystalline material is a polycrystalline material. 119. The inkjet head of claim 117, wherein the non-single crystalline material is an amorphous material. 120. The material forming the heating resistor is
Ar, O, C, N, Si, B, Na, Cl as impurities
117. The inkjet head according to claim 116, containing at least one selected from the group consisting of and Fe. 121. The ink jet head according to claim 116, wherein the electrothermal converter has a pair of electrodes on the heating resistor for contacting the heating resistor to conduct electricity. 122. The ink jet head according to claim 116, wherein the electrothermal converter has a pair of electrodes below the heating resistor for contacting the heating resistor to perform the energization. 123. The ink jet head according to claim 116, wherein the heat acting surface is formed by the heat generating resistor. 124. The ink jet head according to claim 116, wherein the heat acting surface is formed by a protective layer on the heat generating resistor. 125. The ink jet head according to claim 124, wherein the protective layer has a Ta layer forming the heat acting surface, and a Si-containing insulating layer interposed between the Ta layer and the heating resistor. .. 126. The heating resistor layer has a thickness of 300.
The inkjet head according to claim 116, having a thickness of Å to 1 µm. 127. The heating resistor layer has a thickness of 100.
The inkjet head according to claim 116, which has a thickness of 0 to 5,000. 128. The ink jet head according to claim 116, wherein the direction of ejecting the ink and the direction of supplying the ink to the heat acting surface are substantially the same. 129. The ink jet head according to claim 116, wherein the direction of ejecting the ink and the direction of supplying the ink to the heat acting surface are substantially perpendicular to each other. 130. The ink jet head according to claim 116, wherein a plurality of ejection ports for ejecting ink are provided corresponding to the width of the recording region of the recording member. 131. The ink jet head according to claim 130, wherein a plurality of the discharge ports are provided, which is 1000 or more. 132. The ink jet head according to claim 131, wherein a plurality of the discharge ports are provided, 2000 or more. 133. The inkjet head according to claim 116, wherein the functional element relating to ink ejection is structurally provided inside the surface of the inkjet head substrate. 134. The ink-jet head according to claim 116, which is a cartridge type integrally provided with an ink tank for storing ink supplied to the heat acting surface. 135. An electrothermal converter provided with a heating resistor for directly applying thermal energy to ink on a heat-acting surface to generate the thermal energy used for discharging the ink, and the electric heat. An inkjet device comprising a means for applying a signal to a converter, wherein the heating resistor is made of a material containing at least Ir, Os and Ta in the following composition ratio. 17 atomic% ≤ Ir ≤ 73 atomic% 5 atomic% ≤ Os ≤ 58 atomic% 19 atomic% ≤ Ta ≤ 60 atomic% 136. The inkjet device according to claim 135, which performs color recording. 137. The means for applying a signal to the electrothermal converter is a control circuit of an inkjet device.
35. The inkjet device according to 35. 138. The inkjet apparatus according to claim 135, further comprising a carriage for mounting a head having the electrothermal converter. 139. An ink jet head having an electrothermal converter provided with a heating resistor for directly applying thermal energy to the ink on the heat acting surface to generate the thermal energy used for ejecting the ink. In the substrate, the heating resistor is made of a material containing at least Ir, Re and Ta in the following composition ratios. 39 atomic% ≤ Ir ≤ 58 atomic% 9 atomic% ≤ Re ≤ 36 atomic% 22 atomic% ≤ Ta ≤ 51 atomic% 140. The inkjet head substrate according to claim 139, wherein the constituent material of the heating resistor is a non-single crystalline substance. 141. The ink jet head substrate according to claim 140, wherein the non-single crystalline material is a polycrystalline material. 142. The material forming the heating resistor is
Ar, O, C, N, Si, B, Na, Cl as impurities
140. The inkjet head substrate according to claim 139, comprising at least one selected from the group consisting of: and Fe. 143. The ink jet head substrate according to claim 139, wherein the electrothermal converter has a pair of electrodes on the heating resistor for contacting the heating resistor to conduct the current. 144. The ink jet head substrate according to claim 139, wherein the electrothermal converter has a pair of electrodes under the heating resistor for contacting the heating resistor to perform the energization. 145. The inkjet head substrate according to claim 139, wherein the heat-acting surface is formed by the heating resistor. 146. The inkjet head substrate according to claim 139, wherein the heat-acting surface is formed by a protective layer on the heating resistor. 147. The ink-jet head according to claim 146, wherein the protective layer has a Ta layer forming the heat acting surface and a Si-containing insulating layer interposed between the Ta layer and the heating resistor. Substrate. 148. The heating resistor layer has a thickness of 300.
140. The inkjet head substrate according to claim 139, having a thickness of Å to 1 μm. 149. The layer of the heating resistor has a thickness of 100.
149. The inkjet head substrate according to claim 148, which has a thickness of 0 to 5,000. 150. An electrothermal converter having a heating resistor for generating heat energy by directly applying heat energy to the ink on the heat acting surface to discharge the ink is provided in the ink passage. An ink jet head having the same, wherein the heat generating resistor is made of a material containing at least Ir, Re and Ta in the following composition ratios. 39 atomic% ≤ Ir ≤ 58 atomic% 9 atomic% ≤ Re ≤ 36 atomic% 22 atomic% ≤ Ta ≤ 51 atomic% 151. The ink jet head according to claim 150, wherein the constituent material of the heating resistor is a non-single crystalline substance. 152. The inkjet head of claim 151, wherein the non-single crystalline material is a polycrystalline material. 153. The material forming the heating resistor is
Ar, O, C, N, Si, B, Na, Cl as impurities
151. The inkjet head according to claim 150, containing at least one selected from the group consisting of and Fe. 154. The ink jet head according to claim 150, wherein the electrothermal converter has a pair of electrodes on the heating resistor for contacting with the heating resistor and performing the energization. 155. The inkjet head according to claim 150, wherein the electrothermal converter has a pair of electrodes under the heating resistor for contacting the heating resistor to perform the energization. 156. The inkjet head according to claim 150, wherein the heat acting surface is formed by the heating resistor. 157. The ink-jet head according to claim 150, wherein the heat-acting surface is formed by a protective layer on the heating resistor. 158. The protective layer is a Ta layer forming a heat acting surface, and Si interposed between the Ta layer and the heating resistor.
160. The inkjet head according to claim 157, further comprising a containing insulating layer. 159. The heating resistor has a layer thickness of 300.
151. The inkjet head according to claim 150, having a thickness of 1 to 1 [mu] m. 160. The heating resistor layer has a thickness of 100.
151. The inkjet head according to claim 150, which has a thickness of 0 to 5,000. 161. The inkjet head according to claim 150, wherein the direction of ejecting the ink and the direction of supplying the ink to the heat acting surface are substantially the same. 162. The ink jet head according to claim 150, wherein the ink ejection direction and the heat application surface are substantially perpendicular to each other. 163. The ink jet head according to claim 150, wherein a plurality of ejection ports for ejecting ink are provided corresponding to the width of the recording region of the recording member. 164. The ink jet head according to claim 163, wherein a plurality of the ejection ports, 1000 or more, are provided. 165. The ink-jet head according to claim 164, wherein a plurality of the discharge ports, 2000 or more, are provided. 166. The inkjet head according to claim 150, wherein the functional element related to ink ejection is structurally provided inside the surface of the inkjet head substrate. 167. The ink jet head according to claim 150, which is a cartridge type integrally provided with an ink tank for storing ink supplied to the heat acting surface. 168. An electrothermal converter provided with a heating resistor for generating the thermal energy used for ejecting the ink by directly applying thermal energy to the ink on the heat acting surface, and the electric heat. An inkjet device comprising a means for applying a signal to a converter, wherein the heating resistor is made of a material containing at least Ir, Re and Ta in the following composition ratios. 39 atomic% ≤ Ir ≤ 58 atomic% 9 atomic% ≤ Re ≤ 36 atomic% 22 atomic% ≤ Ta ≤ 51 atomic% 169. The inkjet device according to claim 168, which performs color recording. 170. The means for applying a signal to the electrothermal converter is a control circuit of an inkjet device.
68. The inkjet device according to 68. 171. The ink jet apparatus according to claim 168, comprising a carriage for mounting a head having said electrothermal converter. 172. For an ink jet head having an electrothermal converter having a heating resistor for generating the thermal energy used for ejecting the ink by directly applying thermal energy to the ink on the heat acting surface. In the substrate, the heating resistor is made of a material containing at least Ir, Y and Al in the following composition ratios, wherein the inkjet head substrate is characterized. 54 atomic% ≤ Ir ≤ 85 atomic% 2 atomic% ≤ Y ≤ 18 atomic% 13 atomic% ≤ Al ≤ 30 atomic% 173. The inkjet head substrate according to claim 172, wherein a constituent material of the heating resistor is a non-single crystalline substance. 174. The inkjet head substrate of claim 173, wherein the non-single crystalline material is a polycrystalline material. 175. The inkjet head substrate of claim 173, wherein the non-single crystalline material is an amorphous material. 176. The material forming the heating resistor is
Ar, O, C, N, Si, B, Na, Cl as impurities
176. The inkjet head substrate according to claim 172, which contains at least one selected from the group consisting of: and Fe. 177. The ink jet head substrate according to claim 172, wherein said electrothermal converter has a pair of electrodes on said heating resistor for contacting said heating resistor and conducting said energization. 178. The ink jet head substrate according to claim 172, wherein the electrothermal converter has a pair of electrodes under the heating resistor for contacting the heating resistor to perform the energization. 179. The inkjet head substrate according to claim 172, wherein said heat-acting surface is formed by said heat-generating resistor. 180. The inkjet head substrate according to claim 172, wherein the heat-acting surface is formed by a protective layer on the heating resistor. 181. The protective layer is a Ta layer forming a heat acting surface, and Si interposed between the Ta layer and the heating resistor.
The inkjet head substrate according to claim 180, further comprising a containing insulating layer. 182. The heating resistor layer has a thickness of 300.
182. The inkjet head substrate according to claim 181, which has a thickness of Å to 1 μm. 183. The layer of the heating resistor has a thickness of 100.
183. The inkjet head substrate according to claim 182, which has a thickness of 0 to 5,000. 184. An electrothermal converter having a heating resistor for generating the thermal energy used for ejecting the ink by directly applying the thermal energy to the ink on the heat acting surface is provided in the ink passage. In the inkjet head having the above, the heating resistor is made of a material containing at least Ir, Y and Al in the following composition ratios. 54 atomic% ≤ Ir ≤ 85 atomic% 2 atomic% ≤ Y ≤ 18 atomic% 13 atomic% ≤ Al ≤ 30 atomic% 185. The ink-jet head according to claim 184, wherein the constituent material of the heating resistor is a non-single crystalline substance. 186. The inkjet head of claim 185, wherein the non-single crystalline material is a polycrystalline material. 187. The inkjet head substrate according to claim 185, wherein said non-single crystalline substance is an amorphous substance. 188. A material forming the heating resistor is
Ar, O, C, N, Si, B, Na, Cl as impurities
185. The inkjet head of claim 184, containing at least one selected from the group consisting of and Fe. 189. The ink jet head according to claim 184, wherein said electrothermal converter has a pair of electrodes for contacting said heating resistor with said heating resistor to conduct said electricity. 190. The ink jet head according to claim 184, wherein the electrothermal converter has a pair of electrodes below the heating resistor for contacting the heating resistor to perform the energization. 191. The inkjet head of claim 184, wherein the heat acting surface is formed by the heating resistor. 192. The ink jet head according to claim 184, wherein the heat acting surface is formed by a protective layer on the heat generating resistor. 193. The ink jet head according to claim 192, wherein the protective layer has a Ta layer forming the heat acting surface, and a Si-containing insulating layer interposed between the Ta layer and the heating resistor. .. 194. The heating resistor layer has a thickness of 300.
185. The inkjet head according to claim 184, having a thickness of 1 to 1 [mu] m. 195. The heating resistor layer has a thickness of 100.
The inkjet head according to claim 194, which has a thickness of 0 Å to 5000 Å. 196. The ink jet head according to claim 184, wherein the direction of ejecting the ink and the direction of supplying the ink to the heat acting surface are substantially the same. 197. The ink-jet head according to claim 184, wherein the direction of ejecting the ink and the direction of supplying the ink to the heat acting surface form a substantially right angle. 198. The ink jet head according to claim 184, wherein a plurality of ejection ports for ejecting ink are provided corresponding to the width of the recording region of the recording member. 199. The ink-jet head according to claim 198, wherein a plurality of said discharge ports is provided, 1000 or more. 200. The ink-jet head according to claim 199, wherein the discharge ports are provided in a plurality of 2000 or more. 201. The inkjet head according to claim 184, wherein the functional element relating to ink ejection is structurally provided inside the surface of the inkjet head substrate. 202. The ink jet head according to claim 184, which is a cartridge type integrally provided with an ink tank for storing ink supplied to the heat acting surface. 203. An electrothermal converter comprising a heating resistor for generating the thermal energy used for ejecting the ink by directly applying the thermal energy to the ink on the heat acting surface, and the electric heat. An ink jet device comprising means for applying a signal to a converter, wherein the heating resistor is made of a material containing at least Ir, Y and Al in the following composition ratios. 54 atomic% ≤ Ir ≤ 85 atomic% 2 atomic% ≤ Y ≤ 18 atomic% 13 atomic% ≤ Al ≤ 30 atomic% 204. The inkjet device according to claim 203, which performs color recording. 205. The control circuit of the inkjet device, wherein the means for applying a signal to the electrothermal converter is a control circuit of the inkjet device.
Inkjet device according to 03. 206. The inkjet device according to claim 203, comprising a carriage for mounting a head having the electrothermal converter. 207. An ink jet head having an electrothermal converter provided with a heating resistor for directly applying heat energy to the ink on the heat acting surface to generate the heat energy for discharging the ink. A substrate for an inkjet head, wherein the heating resistor is made of a material containing at least Ir, Ru and Cr in the following composition ratios. 21 atomic% ≤ Ir ≤ 51 atomic% 17 atomic% ≤ Ru ≤ 42 atomic% 7 atomic% ≤ Cr ≤ 46 atomic% 208. The inkjet head substrate according to claim 207, wherein a constituent material of said heating resistor is a non-single crystalline substance. 209. The inkjet head substrate of claim 208, wherein the non-single crystalline material is a polycrystalline material. 210. The material forming the heating resistor is
Ar, O, C, N, Si, B, Na, Cl as impurities
The inkjet head substrate according to claim 207, comprising at least one selected from the group consisting of: and Fe. 211. The ink jet head substrate according to claim 207, wherein the electrothermal converter has a pair of electrodes on the heating resistor for contacting the heating resistor and performing the energization. 212. The ink jet head substrate according to claim 207, wherein the electrothermal converter has a pair of electrodes under the heating resistor for contacting the heating resistor to perform the energization. 213. The ink jet head substrate according to claim 207, wherein the heat acting surface is formed by the heating resistor. 214. The inkjet head substrate according to claim 207, wherein said heat-acting surface is formed of a protective layer on said heating resistor. 215. A Ta layer forming the heat acting surface,
The ink jet head substrate according to claim 207, comprising a Si-containing insulating layer interposed between the Ta layer and the heating resistor. 216. The heating resistor layer has a thickness of 300.
The ink jet head substrate according to claim 207, having a thickness of Å to 1 μm. 217. The layer of the heating resistor has a thickness of 100.
218. The inkjet head substrate according to claim 216, which has a thickness of 0 to 5,000. 218. An electrothermal converter provided with a heating resistor for directly applying heat energy to the ink on the heat-acting surface to generate the heat energy used for ejecting the ink is provided in the ink passage. In the inkjet head having the above, the heating resistor is made of a material containing at least Ir, Ru and Cr in the following composition ratios. 21 atomic% ≤ Ir ≤ 51 atomic% 17 atomic% ≤ Ru ≤ 42 atomic% 7 atomic% ≤ Cr ≤ 46 atomic% 219. The inkjet head according to claim 218, wherein the constituent material of the heating resistor is a non-single crystalline substance. 220. The inkjet head of claim 219, wherein the non-single crystalline material is a polycrystalline material. 221. The material constituting the heating resistor is
Ar, O, C, N, Si, B, Na, Cl as impurities
218. The inkjet head according to claim 218, which contains at least one selected from the group consisting of and Fe. 222. The ink jet head according to claim 218, wherein the electrothermal converter has a pair of electrodes on the heating resistor for contacting with the heating resistor and performing the energization. 223. The ink jet head according to claim 218, wherein the electrothermal converter has a pair of electrodes under the heating resistor for contacting the heating resistor to perform the energization. 224. The ink jet head according to claim 218, wherein the heat acting surface is formed by the heating resistor. 225. The ink-jet head according to claim 218, wherein the heat-acting surface is formed by a protective layer on the heating resistor. 226. The ink jet head according to claim 225, wherein the protective layer has a Ta layer forming the heat acting surface, and a Si-containing insulating layer interposed between the Ta layer and the heating resistor. .. 227. The heating resistor layer has a thickness of 300.
The ink jet head according to claim 218, having a thickness of Å to 1 μm. 228. The layer of the heating resistor has a thickness of 100.
The ink jet head according to claim 218, wherein the ink jet head has a thickness of 0 Å to 5000 Å. 229. The ink jet head according to claim 218, wherein a direction of ejecting ink and a direction of supplying ink to the heat acting surface are substantially the same. 230. The ink jet head according to claim 218, wherein the ink ejection direction and the ink supply direction to the heat acting surface are substantially perpendicular to each other. 231. The ink jet head according to claim 218, wherein a plurality of ejection ports for ejecting ink are provided corresponding to the width of the recording region of the recording member. 232. The ink jet head according to claim 231, wherein a plurality of the ejection openings, 1000 or more, are provided. 233. The ink-jet head according to claim 232, wherein a plurality of the discharge ports, 2000 or more, are provided. 234. The inkjet head according to claim 218, wherein the functional element relating to ink ejection is structurally provided inside the surface of the inkjet head substrate. 235. The ink jet head according to claim 218, which is a cartridge type integrally provided with an ink tank for storing ink supplied to the heat acting surface. 236. An electrothermal converter provided with a heating resistor for generating the thermal energy used for ejecting the ink by directly applying the thermal energy to the ink on the heat acting surface, and the electric heat converting element. An inkjet device comprising a means for applying a signal to a heat conversion body, wherein the heating resistor is made of a material containing at least Ir, Ru and Cr in the following composition ratios. .. 21 atomic% ≤ Ir ≤ 51 atomic% 17 atomic% ≤ Ru ≤ 42 atomic% 7 atomic% ≤ Cr ≤ 46 atomic% 237. The inkjet device according to claim 236, which performs color recording. 238. The means for applying a signal to the electrothermal converter is a control circuit of an inkjet device.
36. The inkjet device according to 36. 239. The ink jet apparatus according to claim 236, further comprising a carriage for mounting a head having the electrothermal converter. 240. An ink jet head having an electrothermal converter having a heat generating resistor for generating thermal energy by directly applying thermal energy to the ink on the heat acting surface to eject the ink. In the substrate, the heating resistor is made of a material containing at least Pt and Ta in the following composition ratio, wherein the inkjet head substrate is characterized. 62 atomic% ≤ Pt ≤ 75 atomic% 25 atomic% ≤ Ta ≤ 38 atomic% 241. The inkjet head substrate according to claim 240, wherein the constituent material of the heating resistor is a non-single crystalline substance. 242. The inkjet head substrate according to claim 241, wherein the non-single crystalline material is a polycrystalline material. 243. The material forming the heating resistor is
Ar, O, C, N, Si, B, Na, Cl as impurities
240. The inkjet head substrate according to claim 240, containing at least one selected from the group consisting of: and Fe. 244. The inkjet head substrate according to claim 240, wherein said electrothermal converter has a pair of electrodes on said heating resistor for contacting said heating resistor and for conducting said electricity. 245. The ink jet head substrate according to claim 240, wherein said electrothermal converter has a pair of electrodes below said heating resistor for contacting said heating resistor to carry out said energization. 246. The inkjet head substrate according to claim 240, wherein the heat-acting surface is formed by the heating resistor. 247. The inkjet head substrate according to claim 240, wherein the heat-acting surface is formed by a protective layer on the heating resistor. 248. The ink jet head according to claim 247, wherein said protective layer has a Ta layer forming said heat acting surface and a Si-containing insulating layer interposed between said Ta layer and said heating resistor. Substrate. 249. The layer of the heating resistor has a thickness of 300.
240. The inkjet head substrate according to claim 240, having a thickness of 1 to 1 [mu] m. 250. The heating resistor layer has a thickness of 100.
250. The inkjet head substrate according to claim 249, which has a thickness of 0 to 5,000. 251. An electrothermal converter having a heating resistor for generating the thermal energy used for ejecting the ink by directly applying the thermal energy to the ink on the heat acting surface is provided in an ink passage. In the inkjet head having the above, the heating resistor is made of a material containing at least Pt and Ta in the following composition ratio. 62 atomic% ≤ Pt ≤ 75 atomic% 25 atomic% ≤ Ta ≤ 38 atomic% 252. The inkjet head of claim 251, wherein the constituent material of the heating resistor is a non-single crystalline substance. 253. The inkjet head of claim 252, wherein the non-single crystalline material is a polycrystalline material. 254. The material forming the heating resistor is
Ar, O, C, N, Si, B, Na, Cl as impurities
252. The inkjet head according to claim 251, containing at least one selected from the group consisting of and Fe. 255. The ink-jet head according to claim 251, wherein the electrothermal converter has a pair of electrodes on the heating resistor for contacting the heating resistor to conduct the current. 256. The ink-jet head according to claim 251, wherein the electrothermal converter has a pair of electrodes under the heating resistor for contacting the heating resistor to perform the energization. 257. The ink-jet head according to claim 251, wherein the heat-acting surface is formed by the heating resistor. 258. The ink-jet head according to claim 251, wherein the heat-acting surface is formed by a protective layer on the heating resistor. 259. The ink jet head according to claim 258, wherein the protective layer has a Ta layer forming the heat acting surface, and a Si-containing insulating layer interposed between the Ta layer and the heating resistor. .. 260. The layer of the heating resistor has a thickness of 300.
252. The inkjet head according to claim 251, which has a thickness of 1 to 1 m. 261. The layer of the heating resistor has a thickness of 100.
260. The inkjet head according to claim 260, which has a thickness of 0 to 5,000. 262. The inkjet head according to claim 251, wherein a direction of ejecting ink and a direction of supplying ink to the heat acting surface are substantially the same. 263. The ink jet head according to claim 251, wherein the direction of ejecting ink and the direction of supplying ink to the heat acting surface are substantially perpendicular to each other. 264. The inkjet head according to claim 251, wherein a plurality of ejection ports for ejecting ink are provided corresponding to the width of the recording region of the recording member. 265. The ink jet head according to claim 264, wherein a plurality of the discharge ports are provided, which is 1000 or more. 266. The ink-jet head according to claim 265, wherein a plurality of the discharge ports are provided, 2000 or more. 267. The inkjet head according to claim 251, wherein the functional element relating to ink ejection is of a type structurally provided inside the surface of the inkjet head substrate. 268. The ink jet head according to claim 251, wherein the ink jet head is a cartridge type integrally provided with an ink tank for storing ink supplied to the heat acting surface. 269. An electrothermal converter provided with a heating resistor for generating the thermal energy used for ejecting the ink by directly applying thermal energy to the ink on the heat acting surface, and the electric heat. An ink jet device comprising means for applying a signal to a converter, wherein the heating resistor is made of a material containing at least Pt and Ta in the following composition ratio. 62 atomic% ≤ Pt ≤ 75 atomic% 25 atomic% ≤ Ta ≤ 38 atomic% 270. The inkjet device of claim 269, which performs color recording. 271. The means for applying a signal to the electrothermal converter is a control circuit of an inkjet device.
69. The inkjet device according to 69. 272. The inkjet device according to claim 269, further comprising a carriage for mounting a head having the electrothermal converter.