JP3188524B2 - Substrate for inkjet head, inkjet head using the substrate, and inkjet apparatus equipped with the head - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to resistance to cavitation impact, resistance to erosion due to cavitation, chemical stability, electrochemical stability, oxidation resistance, melting resistance, heat resistance, thermal shock resistance, and mechanical stability. Ink jet head equipped with a heating resistor excellent in mechanical durability and the like,
The present invention relates to a substrate for an ink jet head and an ink jet device for constituting the head. A typical example of the ink jet head is an ink jet head having an electrothermal converter having a heating resistor which generates heat energy used for discharging ink by directly applying heat energy to the ink on the heat acting surface. A typical example. The electrothermal converter has low power consumption and excellent responsiveness to an input signal.

[0002]

2. Description of the Related Art An ink jet system using thermal energy described in U.S. Pat. No. 4,723,129 and U.S. Pat.
It is capable of high-speed, high-density, high-definition, high-quality recording, and is suitable for colorization and compactness. In a typical example of an apparatus using this method, a heat acting portion for applying heat to the ink exists because the ink that is the recording liquid is ejected using thermal energy. That is, a heating resistor having a heat acting portion is provided corresponding to the ink path, and the heat energy generated by the heating resistor is rapidly heated to foam the ink, and the ink is discharged based on the foaming. Is what you do.

[0003] From the viewpoint of applying heat to an object, the heat-acting portion has a portion that is apparently similar to the structure of a conventional thermal head. However, the heat-acting portion is in direct contact with ink. The thermal action portion is exposed to mechanical shock or erosion due to cavitation due to repeated bubbling and defoaming of the ink. In addition, the thermal action is performed for a very short time of 10 ^-1 to 10 microseconds. The fundamental technology is greatly different from that of the thermal head in that the thermal head is exposed to a rise and fall of a temperature close to ° C. Therefore, it goes without saying that the thermal head technology cannot be directly applied to the ink jet technology. That is, the thermal head technology and the ink jet technology cannot be discussed in the same line.

Meanwhile, since the heat acting portion of the ink jet head is exposed to the severe environment as described above, for example, SiO.sub.2 is formed as a protective film on the heating resistor.
_It is a general practice to provide a structure in which an electrically insulating layer made of ₂ , SiC, Si ₃ N, or the like, and a cavitation-resistant layer made of Ta or the like thereon are further provided to protect the heat acting portion from the use environment. As a constituent material of a protective film used for such an ink jet head, for example, US Pat.
Materials that are resistant to cavitation impact and erosion described in Japanese Patent No. 35,389.

[0005] Separately, in order to reduce power consumption and increase responsiveness to an input signal, heat generated by the heating resistor is efficiently and promptly applied to the heat acting portion of the ink jet head. It is desired to act on the ink. Therefore, in addition to the form in which the protective film is provided, a form in which the heating resistor is in direct contact with the ink is proposed in, for example, Japanese Patent Application Laid-Open No. 55-126462.

Although the ink jet head of this embodiment is superior to the embodiment provided with the protective film in terms of thermal efficiency, it not only exposes the heat generating resistor to shock and erosion due to cavitation, and further increases and decreases the temperature. In addition, since the recording liquid in contact with the heating resistor has conductivity, a current also flows in the recording liquid, and the heating resistor is exposed to the resulting electrochemical reaction. For this reason, various metals, alloys, metal compounds, or cermets, such as Ta ₂ N and RuO ₂ , which are conventionally known as materials for a heating resistor, are also used for the heating resistor of the ink jet head of this embodiment. Durability and stability are not always sufficient.

As for the ink jet head provided with the above-mentioned protective film, there has been proposed an ink jet head which can be practically employed in terms of durability and resistance change. It is very difficult to completely prevent the occurrence of defects that sometimes occur, and this point is a major factor that lowers the yield during mass production. This has become a serious problem since higher speed and higher density of printing are required, and the number of ejection ports of the ink jet head tends to increase correspondingly.

Further, the above-mentioned protective film reduces the efficiency of heat transfer from the heating resistor to the recording liquid. However, if the heat transfer efficiency is low, the required overall power consumption increases, and the ink jet head during driving is required. The temperature change becomes large. This change in temperature leads to a change in the volume of the droplet discharged from the discharge port, which causes a change in density in an image. Also, in order to cope with high-speed printing, if the number of ejections per time is increased and the power consumption of the inkjet head is correspondingly increased, the temperature change becomes large, and the temperature change is corresponding to the obtained image. This will result in a change in concentration. In addition, even when the number of ejection ports is increased due to the increase in the density of the electrothermal transducer, the power consumption of the ink-jet head increases, and the temperature change due to the temperature change also results in the density change corresponding to the temperature change. Will be accompanied. Such a problem that an obtained image has a change in density is contrary to a demand for higher quality of a recorded image, and is a problem that needs to be solved early.

In order to solve such a problem, there is a strong demand for providing a heat-efficient ink jet head in which the heating resistor and the ink are in direct contact with each other.

[0010]

However, as described above, in the conventional configuration in which the ink is in direct contact with the heating resistor, the heating resistor is exposed to the impact or erosion due to cavitation, and further to the rise and fall of the temperature. As well as being exposed to electrochemical reactions,
Conventional heating resistor materials such as Ta ₂ N, RuO ₂ , and HfB ₂ have problems in durability, such as being mechanically broken, corroded, and dissolved.

The material described in US Pat. No. 4,335,389, which is strong against impact and erosion due to cavitation, has its effect only when used as a protective film (anti-cavitation layer) as described above. It will be demonstrated. However, when this material is used as a heating resistor directly in contact with the ink, the material may be dissolved or corroded by an electrochemical reaction, and sufficient durability cannot be obtained.

In addition, ejection stability is indispensable for high-definition and high-quality printing. For this purpose, it is necessary that the resistance change of the heating resistor is small. JP-A-59-9
No. 6971 discloses Ta and Ta-Al alloy.
When used as a heat-generating resistor that is in direct contact with the ink of the ink-jet head, it is relatively excellent in durability in that the resistor does not break, that is, in cavitation resistance. However, in terms of resistance change during repeated foaming, for example, Ta or Ta-Al alloy is not so small and unsatisfactory. Furthermore, T
In a and Ta-Al alloys, the ratio M between the applied pulse voltage (V _break ) at which the resistor breaks and the foaming threshold voltage (V _th ) is not so large, the heat resistance is not so high, and the driving voltage (V _op ) There has been a problem that the life of the resistor may be greatly reduced due to a slight increase in the resistance. That is, Ta
And Ta-Al alloys are not always sufficiently resistant to electrochemical reactions, and when used as a material for a heating resistor that is in direct contact with the ink of an ink jet head, when foaming is repeated by a large number of applied pulses, The problem is that the electrical resistance of the heating resistor changes greatly, and the foaming state also changes, and the slight change in V _op greatly affects the life of the resistor because the heat resistance is not so large. There is a problem that there is.

As described above, even if a heating resistor directly in contact with a recording liquid (ie, ink) is formed of a conventionally known material, resistance to cavitation impact, resistance to erosion due to cavitation, mechanical durability, It is difficult to obtain an inkjet head or an inkjet apparatus that satisfies all of chemical stability, electrochemical stability, resistance stability, heat resistance, oxidation resistance, dissolution resistance and thermal shock resistance.

In particular, an ink jet head having a structure in which a heating resistor is provided so as to be in direct contact with ink, has high heat conduction efficiency, is excellent in signal response, and has sufficient durability and ejection stability. It is not easy to get.

The present inventors have made an invention which solves the various technical problems described above (International Publication WO90 / 09).
888 (hereinafter referred to as "Document 1") and WO 90/098
87 (hereinafter referred to as "Document 2"). That is, in these Documents 1 and 2, the present inventors have determined that an Ir—Ta alloy having a specific composition range or an Ir—Ta— alloy having a specific composition range.
It has been proposed to use an Al alloy as a material for a heating resistor of an ink jet head. These alloys are resistant to cavitation impact, cavitation erosion, mechanical durability, chemical stability, electrochemical stability, resistance stability, heat resistance, oxidation resistance, melting resistance and thermal shock resistance. It is reasonably satisfactory for all genders. Among them, Ir is particularly heat-resistant,
It is a preferable material which is easy to exhibit superiority in terms of oxidation resistance, chemical stability and the like.

In recent years, ink jet devices have tended to be miniaturized for personal use, and small ink jet devices incorporating a secondary battery are commercially available. By the way, a commercially available ordinary secondary battery has a voltage of one.
It is around 0V. In an ink-jet device incorporating such a secondary battery, a predetermined converter is incorporated so that the voltage of about 10 V of the secondary battery is approximately doubled to 20 V.
Often used up and down. The reason is to achieve high-speed recording by high-speed driving by shortening the width (driving time) of the driving pulse.

On the other hand, there is a demand for further downsizing of the ink jet apparatus, and in this case, it is desirable to omit the use of the converter. In the case of an inkjet apparatus without a converter, a voltage of about 10 V of a secondary battery is used as a driving voltage, and the width of a driving pulse (driving time) is required to discharge ink in an appropriate state by the lower driving voltage. ) Needs to be increased.

However, when the driving is performed by the driving pulse having a relatively long width as described above, even if the heating resistors proposed in the above-mentioned Documents 1 and 2 are not sufficient in terms of durability. I can not say. Therefore, it is desired to provide a heating resistor having sufficient durability even when driving is performed by a driving pulse having a relatively long width.

A main object of the present invention is to solve the above-mentioned problems in the conventional ink jet head and to provide an improved ink jet head.

Another object of the present invention is to provide resistance to cavitation impact, resistance to erosion due to cavitation, mechanical durability, chemical stability, electrochemical stability, resistance stability, heat resistance, oxidation resistance, An object of the present invention is to provide an ink jet head having improved dissolution resistance and thermal shock resistance.

A further object of the present invention is to stably and immediately respond to an on-demand signal even when used repeatedly for a long time to efficiently transfer heat energy to a recording liquid (ink) to discharge ink. And to provide an improved inkjet head that provides excellent recorded images.

Still another object of the present invention is to provide a structure in which a heat generating resistor is in direct contact with a recording liquid and has excellent heat conductivity.
The power consumption by the heating resistor is kept low, the temperature change of the inkjet head is extremely small, the ink is always stably ejected even when used repeatedly for a long time, and the density of the obtained image is changed by the temperature change of the inkjet head. It is an object of the present invention to provide an improved inkjet head which eliminates the problem.

Another object of the present invention is to provide a driving pulse having a relatively long width while taking advantage of Ir, which is particularly advantageous in terms of heat resistance, oxidation resistance, and chemical stability. An object of the present invention is to provide an ink jet head having a heating resistor made of a material exhibiting sufficient durability even when performing the above.

Still another object of the present invention is to provide an ink jet head substrate for constituting the above ink jet head, and an ink jet apparatus having the above ink jet head.

[0025]

According to the present invention, there is provided a substrate for an ink-jet head, wherein a heat-generating resistor is generated by energizing the thermal energy which is used for directly applying thermal energy to the ink on the heat-acting surface to discharge the ink. In the substrate for an ink jet head having an electrothermal transducer having a body, the heating resistor is made of a material containing at least Ir and Cr in the following composition ratio.

24 at% ≦ Ir ≦ 68 at% 32 at% ≦ Cr ≦ 76 at% In this case, the heating resistor may be made of a material containing at least Ir, Ta and Ti in the following composition ratios. Good.

46 atomic% ≦ Ir ≦ 78 atomic% 5 atomic% ≦ Ta ≦ 43 atomic% 10 atomic% ≦ Ti ≦ 38 atomic% Further, the heat generating resistor contains at least Ir, Ru and Ta in the following composition ratio. It may be composed of a contained material.

10 atomic% ≦ Ir ≦ 67 atomic% 11 atomic% ≦ Ru ≦ 58 atomic% 18 atomic% ≦ Ta ≦ 63 atomic% Further, the heat generating resistor contains at least Ir, Os and Ta in the following composition ratio. It may be composed of a contained material.

17 atomic% ≦ Ir ≦ 73 atomic% 5 atomic% ≦ Os ≦ 58 atomic% 19 atomic% ≦ Ta ≦ 60 atomic% Further, the heat generating resistor has at least Ir, Re and Ta in the following composition ratios. It may be composed of a contained material.

39 atomic% ≦ Ir ≦ 58 atomic% 9 atomic% ≦ Re ≦ 36 atomic% 22 atomic% ≦ Ta ≦ 51 atomic% Further, the heating resistor contains at least Ir, Y and Al in the following composition ratio. It may be composed of a contained material.

54 atomic% ≦ Ir ≦ 85 atomic% 2 atomic% ≦ Y ≦ 18 atomic% 13 atomic% ≦ Al ≦ 30 atomic% Further, the heating resistor includes at least Ir, Ru and Cr in the following composition ratios. It may be composed of a contained material.

21 atomic% ≦ Ir ≦ 51 atomic% 17 atomic% ≦ Ru ≦ 42 atomic% 7 atomic% ≦ Cr ≦ 46 atomic% Further, the heat generating resistor contains at least Pt and Ta in the following composition ratio. It may be composed of a material.

62 atomic% ≦ Pt ≦ 75 atomic% 25 atomic% ≦ Ta ≦ 38 atomic% Further, the ink jet head of the present invention is constituted by using the above-described ink jet head substrate. It is configured using a head.

[0034]

The present inventors have intensively studied to solve the above-mentioned problems in the conventional ink jet head and to achieve the above object. As a result, when a heating resistor of an ink jet head is formed by using a non-single-crystalline substance composed of Ir and one specific element or Ir and two specific elements, it has been found that the above object can be achieved. The present invention has been completed based on the findings. These non-single-crystalline substances include an amorphous substance, a polycrystalline (polycrystalline) substance, and an amorphous substance containing Ir and one specific element or Ir and two specific elements at specific composition ratios. A substance in which a substance and a polycrystalline substance are mixed (hereinafter, these are collectively referred to as “non-single-crystal substance” or “alloy”).

The present invention includes the following five embodiments A to E.

[Aspect A] Ir-Ta proposed in Document 1
It is composed of a non-single-crystal material in which Ta is replaced with another element, while taking advantage of Ir, which easily gives advantages over alloys, particularly in terms of heat resistance, oxidation resistance, and chemical stability. Ink jet head having a heating resistor.

[Aspect B] Ir-Ta proposed in Reference 2
-A non-single-crystal substance in which Al is replaced with another element, while taking advantage of Ir, which is easy to exhibit advantages, especially in terms of heat resistance, oxidation resistance, chemical stability, etc. An inkjet head having a heating resistor configured.

[Aspect C] Ir-Ta proposed in Reference 2
-A non-single-crystal material in which Ta is replaced with another element, while taking advantage of Ir, which is easy to exhibit superiority in terms of heat resistance, oxidation resistance, chemical stability, etc., particularly with respect to Al alloys. An inkjet head having a heating resistor configured.

[Aspect D] Ir-Ta proposed in Reference 2
Compared to an Al alloy, Ir and Ta are replaced with two different elements while taking advantage of Ir, which is particularly advantageous in terms of heat resistance, oxidation resistance, and chemical stability. An ink jet head having a heating resistor made of a single crystal material.

[Embodiment E] Ir-Ta proposed in Document 1
Ir which easily gives an advantage to the alloy particularly in terms of heat resistance, oxidation resistance, chemical stability, etc. is replaced with a platinum group element to which Ir belongs and Ta is replaced with another element. An inkjet head having a heating resistor made of a crystalline material.

The above-described embodiments A to E are more specifically described below.

[Aspect A] The heating resistor of the ink-jet head is made of a material containing Ir and Cr in specific composition ratios. Iridium (Ir) is selected from the viewpoint of a substance having high heat resistance and oxidation resistance and being chemically stable, and chromium is selected from the viewpoint of a substance having mechanical strength and providing an oxide having high solvent solubility. (Cr) is selected.

[Aspect Ba] The heating resistor of the ink jet head is made of a material containing Ir, Ta, and Ti in specific composition ratios. Iridium (Ir) is selected from the viewpoint of a material having high heat resistance and oxidation resistance and being chemically stable, and tantalum (T) is selected from the viewpoint of a material which forms an alloy with another metal element and produces strength and electric resistance.
a) is selected, and titanium (Ti) is selected from the viewpoint of a material which provides an oxide which is rich in processability and adhesion and which has high solvent solubility.

[Aspect Bb] The heat generating resistor of the ink jet head is made of a material containing Ir, Ta and Ru in specific composition ratios. Iridium (Ir) is selected from the viewpoint of a substance which is rich in heat resistance and oxidation resistance and is chemically stable, and is made of an alloy with other metal elements which is rich in oxidation resistance and chemically stable and has strength. Ruthenium (Ru) is selected from the viewpoint of a substance that produces oxides, and tantalum (Ta) is selected from the viewpoint of a substance that provides an oxide having high heat resistance and solvent resistance.

[Aspect Bc] The heating resistor of the ink jet head is made of a material containing Ir, Ta, and Os in specific composition ratios. Iridium (Ir) is selected from the viewpoint of a substance that is rich in heat resistance and oxidation resistance and is chemically stable, and is chemically stable and rich in heat resistance, and is alloyed with other metal elements to produce strength and electric resistance. Osmium (Os) is selected from the viewpoint of a substance that produces oxides, and tantalum (Ta) is selected from the viewpoint of a substance that has mechanical strength and provides an oxide having high solvent solubility.

[Embodiment Bd] The heating resistor of the ink jet head is made of a material containing Ir, Ta and Re in specific composition ratios. Iridium (Ir) is selected from the viewpoint of a material that is rich in heat resistance and oxidation resistance and is chemically stable, and is a material that is rich in heat resistance and forms an alloy with another metal element to produce strength and electric resistance. Is selected, and tantalum (Ta) is selected from the viewpoint of a substance having mechanical strength and providing an oxide having high solvent solubility.

[Aspect C] The heating resistor of the ink jet head is made of a material containing Ir, Al, and Y in specific composition ratios. Iridium (Ir) is selected from the viewpoint of a material that is rich in heat resistance and oxidation resistance and is chemically stable, and yttrium (Y) is used in view of a material that forms an alloy with another metal element and produces strength and electric resistance. Is selected, and aluminum (Al) is selected from the viewpoint of a material that provides an oxide having high processability and adhesion and high solvent solubility.

[Embodiment D] The heating resistor of the ink jet head is made of a material containing Ir, Ru, and Cr in specific composition ratios. Iridium (Ir) is selected from the viewpoint of a substance which is rich in heat resistance and oxidation resistance and is chemically stable, and is made of an alloy with other metal elements which is rich in oxidation resistance and chemically stable and has strength. Ruthenium (Ru) is selected from the viewpoint of a substance that produces chromium, and chromium (Cr) is selected from the viewpoint of a substance that provides an oxide having high heat resistance and solvent solubility.

[Embodiment E] The heat generating resistor of the ink jet head is made of a material containing Pt and Ta in specific composition ratios. Platinum (Pt) of the platinum group is selected from the viewpoint of a substance that is rich in heat resistance and oxidation resistance and is chemically stable. Tantalum (T
a) is selected.

The present invention including the above embodiments A to E
The present inventors have conducted experiments and completed the experiments based on the knowledge obtained through those experiments. The experiments performed by the present inventors are as described below.

The present inventors prepared a plurality of samples of the above non-single crystalline substance by a sputtering method. For each sample, a thermally oxidized SiO ₂ film having a thickness of 2.5 μm was formed on the Si single crystal substrate and the surface using a sputtering apparatus (trade name: sputtering apparatus CFS-8EP, manufactured by Tokuda Seisakusho Co., Ltd.) shown in FIG. It was produced by forming a film on each of the formed Si single crystal substrates.

The sputtering apparatus shown in FIG. In the film forming chamber 601, a substrate holder 602 for holding a substrate 603 on which a film forming process is performed is provided. The substrate holder 602 has a built-in heater (not shown) for heating the substrate 603. The substrate holder 602 is supported by a rotating shaft 608 extending from a drive motor (not shown) installed outside the system, and is designed to be able to move up and down and rotate.

At a position facing the substrate 603 in the film forming chamber 601, a target holder 605 for holding a film forming target is installed. Target holder 60
The target 606 placed on the surface of No. 5 is made of a plate of a specific element having a purity of 99.9% by weight or more. A target 607 and a target 620 are respectively arranged on the target 606, and these are also 9
It consists of a sheet of a specific element having a purity of 9.9% by weight or more. Target 607 and target 620
As shown in the figure, one or more of the components each having a predetermined area are arranged at predetermined intervals according to the surface area of the target 606. Target 607 and Target 6
The individual area settings and arrangements of 20 are determined in advance to determine how a film containing a desired specific element at a specific composition ratio can be obtained in relation to the area ratio of each target, and prepare a calibration curve. It is performed based on the calibration curve.

The protective wall 618 that covers the side surface of the target holder 605 is provided so as to cover the periphery of the target 606, the target 607, and the target 620 so that the side surface is not sputtered by plasma. The RF power supply 615 includes a matching box 614.
In addition, it is electrically connected to the peripheral wall of the film forming chamber 601 through the conductive wire 616, and is electrically connected to the target holder 605 through the matching box 614 and the conductive wire 617.

The target 606, the target 607, and the target 6
A mechanism (not shown) for internally circulating the cooling water so that the temperature of the cooling water 20 is maintained at a predetermined temperature is provided. Film forming chamber 60
1 is provided with an exhaust pipe 610 for exhausting the inside of the film forming chamber 601, and the exhaust pipe 610 is connected to a vacuum pump (not shown) via an exhaust valve 611. The gas supply pipe 612 is for introducing a sputtering gas such as an argon gas (Ar gas) or a neon gas (Ne gas) into the film formation chamber 601. The flow rate is adjusted by a flow rate adjustment valve 613 provided in. Insulator 609
In order to electrically insulate the target holder 605 from the film forming chamber 601, the target holder 605 and the film forming chamber 6
01 is provided between the bottom wall and the bottom wall. The vacuum gauge 619 is
This is provided to detect the internal pressure of the film forming chamber 601, and the setting of the sputtering conditions is performed using the detection pressure of the vacuum gauge 619.

The shutter plate 604 is positioned above the target holder 605 and the substrate 603 and the target 606,
It is provided so that it can move horizontally to block the space between the target 607 and the target 620. The shutter plate 604 is used as follows. Before starting the film formation, the shutter plate 604 is moved to the upper part of the target holder 605 holding the target 606, the target 607, and the target 620, and the gas supply pipe 612 is moved.
, An inert gas such as an argon (Ar) gas is introduced into the film forming chamber 601 and RF power is applied from an RF power supply 615 to turn the inert gas into plasma, and the generated plasma generates the targets 606, 607, and 607. The target 620 is sputtered to remove impurities on the surface of each target. After that, the shutter plate 604 is moved to a position (not shown) that does not harm the film formation.

As the targets, the following specific elements were used in accordance with the heating resistors to be obtained.

[Aspect A] 606: Cr, 607: Ir, 620:
Ir [Aspect Ba] 606: Ti, 607: Ir, 620:
Ta [Aspect B-b] 606: Ta, 607: Ir, 620:
Ru [Aspect B-c] 606: Ta, 607: Ir, 620:
Os [Aspect B-d] 606: Ta, 607: Ir, 620:
Re [Aspect C] 606: Al, 607: Ir, 620:
Y [Aspect D] 606: Cr, 607: Ir, 620:
Ru [Aspect E] 606: Ta, 607: Pt, 620:
Pt Production of each sample using the apparatus shown in FIG. 6 described above was performed under the following film forming conditions.

Substrate placed on substrate holder 602: 4i
nchφ size Si single crystal substrate (manufactured by Wacker) (1
) And a 4-inch φ single-crystal silicon substrate (manufactured by Wacker) having a 2.5 μm thick SiO ₂ film formed on the surface. Substrate setting temperature: 50 ° C. Base pressure: 2.6 × 10 ⁻⁴ Pa or less High frequency (PF) Power: 1000 W Sputtering gas and gas pressure: argon gas,
0.4 Pa Film formation time: 12 minutes Among the samples obtained as described above, SiO ₂
For some of the samples formed on the film substrate, electron emission was measured using EPM-810 manufactured by Shimadzu Corporation.
Probe micro-analysis for composition analysis, then Mac for sample deposited on Si single crystal substrate
Crystallinity was observed with an X-ray diffractometer (trade name: MXP3) manufactured by Science Corporation. The obtained results are shown in the following drawings.

[Aspect A] Fig. 13 [Aspect Ba] Fig. 7 [Aspect Bb] Fig. 8 [Aspect Bc] Fig. 9 [Aspect Bd] Fig. 10 [Aspect C] Fig. 11 [Aspect D] FIG. 12 [Embodiment E] FIG. 14 In these drawings, ▲ indicates that the sample is a polycrystalline substance, and X indicates that the sample is a mixture of a polycrystalline substance and an amorphous substance. Is an amorphous substance is indicated by ●.

Next, a so-called “pond test” for observing the resistance to the electrochemical reaction and the resistance to the mechanical shock was performed using another part of each sample formed on the SiO ₂ film substrate, Further, a step stress test (SST) for observing heat resistance and impact resistance in air was performed using the remaining film formed on the SiO ₂ film substrate. The pond test described below was carried out using a liquid prepared by dissolving 0.15 wt% of sodium acetate in a solution consisting of 70 parts by weight of water and 30 parts by weight of diethylene glycol as the immersion liquid. And a foam durability test. The results of the “pond test” and the results of the SST were comprehensively examined.
The results of the study are shown below.

[Embodiment A] The present inventors have prepared a non-single crystal I containing Ir and Cr as essential components in the following composition ratios.
It has been determined that the r-Cr material has suitability for use as a heating resistor of an inkjet head.

24 atomic% ≦ Ir ≦ 68 atomic% 32 atomic% ≦ Cr ≦ 76 atomic% [Aspect Ba] The present inventors have determined the following composition ratios of Ir,
Non-single-crystal Ir containing Ta and Ti as essential components
It was determined that the -Ta-Ti material has suitability for use as a heating resistor of an ink jet head.

46 atomic% ≦ Ir ≦ 78 atomic% 5 atomic% ≦ Ta ≦ 43 atomic% 10 atomic% ≦ Ti ≦ 38 atomic% [Embodiment Bb] The present inventors have determined that Ir,
Non-single-crystal Ir containing Ru and Ta as essential components
-It was determined that the Ru-Ta substance has suitability for use as a heating resistor of an ink jet head.

10 atomic% ≦ Ir ≦ 67 atomic% 11 atomic% ≦ Ru ≦ 58 atomic% 18 atomic% ≦ Ta ≦ 63 atomic% [Aspect B-c] The present inventors have determined that Ir,
Non-single-crystal Ir containing Os and Ta as essential components
It was determined that the -Os-Ta substance has suitability for use as a heating resistor of an inkjet head.

17 atomic% ≦ Ir ≦ 73 atomic% 5 atomic% ≦ Os ≦ 58 atomic% 19 atomic% ≦ Ta ≦ 60 atomic% [Aspect B-d] The present inventors have determined that Ir,
Non-single-crystal Ir containing Re and Ta as essential components
-It was determined that the Re-Ta substance had suitability for use as a heating resistor of an ink jet head.

39 atomic% ≦ Ir ≦ 58 atomic% 9 atomic% ≦ Re ≦ 36 atomic% 22 atomic% ≦ Ta ≦ 51 atomic% [Aspect C] The present inventors have made the following composition ratio Ir, Y and Al A non-single crystal Ir-Y-
It was determined that the Al material has suitability for use as a heating resistor of an ink jet head.

54 atomic% ≦ Ir ≦ 85 atomic% 2 atomic% ≦ Y ≦ 18 atomic% 13 atomic% ≦ Al ≦ 30 atomic% [Embodiment D] The present inventors have determined the following composition ratios of Ir and Ru
-Crystal Ir-R containing Cr and Cr as essential components
It has been determined that the u-Cr material has suitability for use as a heating resistor of an ink jet head.

21 atomic% ≦ Ir ≦ 51 atomic% 17 atomic% ≦ Ru ≦ 42 atomic% 7 atomic% ≦ Cr ≦ 46 atomic% [Embodiment E] The present inventors require Pt and Ta at the following composition ratios. It was determined that the non-single-crystal Pt-Ta substance contained as a component had suitability for use as a heating resistor of an ink jet head.

62 at% ≦ Pt ≦ 75 at% 25 at% ≦ Ta ≦ 38 at% Further, the present inventors constructed a heating resistor using these non-single-crystal materials and fabricated an ink jet head. The following facts turned out.

That is, the use of the non-single-crystal substance makes it possible to obtain a heating resistor excellent in resistance to cavitation impact, erosion resistance due to cavitation, electrochemical and chemical stability and heat resistance. In particular, it is possible to obtain an ink jet head in which the heat generating portion of the heat generating resistor is in direct contact with the ink in the ink path. In the ink jet head having this configuration, the heat energy generated from the heat generating portion of the heat generating resistor can directly act on the ink, so that the efficiency of heat transfer to the ink is good. Therefore, the power consumption by the heating resistor can be kept low, and the temperature rise of the inkjet head (temperature change of the inkjet head) can be significantly reduced. Accordingly, it is possible to prevent a change in image density due to a change in temperature of the inkjet head. Further, it is possible to obtain better responsiveness to the ejection signal applied to the heating resistor.

Further, in the heating resistor according to the present invention, a desired specific resistance value can be obtained with good controllability and with a very small variation in resistance value in one ink jet head. Therefore, it is possible to discharge ink much more stably than before, and to obtain an ink jet having excellent durability.

An ink jet head having the above-described good characteristics is very suitable for high-speed recording and high image quality due to the use of multiple ejection ports.

The present invention mainly performs driving with a relatively long driving pulse while making use of the advantages of Ir, which can exhibit advantages such as heat resistance, oxidation resistance, and chemical stability. An object of the present invention is to provide an ink jet head having a heating resistor made of a material exhibiting sufficient durability even in such a case. In the present invention, the heating resistor of the inkjet head is mainly
It is characterized by being composed of a material containing Ir and one specific element or Ir and two specific elements in specific composition ratios. The present invention includes an inkjet head substrate for constituting the inkjet head and an inkjet device having the inkjet head.

[Embodiment A] The embodiment A of the present invention relates to an electric apparatus having a heating resistor which is generated by energizing the heat energy used for ejecting the ink by directly applying thermal energy to the ink on the heat acting surface. In the ink jet head including the heat converter, the heating resistor is substantially composed of a material containing Ir and Cr in the following composition ratio.

24 atomic% ≦ Ir ≦ 68 atomic% 32 atomic% ≦ Cr ≦ 76 atomic% In this embodiment, Ir, which is excellent in heat resistance, oxidation resistance, chemical stability, etc., prevents unnecessary reactions from occurring. , And Cr provide mechanical strength and generate stable oxides to provide resistance to dissolution.

The present inventors have confirmed through experiments that the following problems were encountered when a heating resistor of an ink-jet head was formed using a non-single-crystal Ir-Cr substance having a composition ratio outside the above range. . That is, resistance to cavitation impact, resistance to cavitation erosion, electrochemical stability, chemical stability,
Heat resistance, adhesiveness, internal stress, etc. are not appropriate, and sufficient durability cannot be obtained when used as a heating resistor of an ink jet head, particularly when used as a heating resistor directly in contact with ink. For example, when the amount of Ir is too large, the peeling of the film may occur. On the other hand, when the amount of Cr is too large, the resistance change may be severe.

[Embodiment Ba] The embodiment Ba of the present invention relates to a heating resistor which is generated by energizing the heat energy used for ejecting ink by directly applying heat energy to the ink on the heat-acting surface. In an ink jet head having an electrothermal transducer having a body, the heating resistor is substantially composed of a material containing Ir, Ta and Ti in the following composition ratios.

46 atomic% ≦ Ir ≦ 78 atomic% 5 atomic% ≦ Ta ≦ 43 atomic% 10 atomic% ≦ Ti ≦ 38 atomic% In this embodiment, Ir having excellent heat resistance, oxidation resistance, chemical stability, and the like. Prevents the occurrence of unnecessary reactions, Ta imparts mechanical strength and forms a stable oxide to provide dissolution resistance, and Ti coexists with these elements to impart ductility to the alloy material. , Make the stress appropriate, adhesion,
It is supposed to increase toughness.

The present inventors have the following problems when using a non-single-crystal Ir-Ta-Ti material outside the specific composition range described above to form a heating resistor of an ink jet head. Was confirmed through experiments. That is, resistance to cavitation impact, resistance to erosion due to cavitation, electrochemical stability,
Chemical stability, heat resistance, adhesion, internal stress, etc. are no longer appropriate, and sufficient durability when used as a heating resistor of an ink jet head, especially when used as a heating resistor directly in contact with ink. I can't get it. For example, when the amount of Ir is too large, peeling of the film may occur. On the other hand, when the amount of Ta or Ti is too large, the resistance change may be severe.

[Embodiment Bb] The embodiment Bb of the present invention is directed to a heating resistor which is generated by energizing the thermal energy used for ejecting the ink by directly applying thermal energy to the ink on the heating surface. In an ink jet head having an electrothermal transducer provided with a body, the heating resistor is substantially composed of a material containing Ir, Ru and Ta in the following composition ratios.

10 atomic% ≦ Ir ≦ 67 atomic% 11 atomic% ≦ Ru ≦ 58 atomic% 18 atomic% ≦ Ta ≦ 63 atomic% In this embodiment, Ir having excellent heat resistance, oxidation resistance, chemical stability, and the like. Prevents the occurrence of unnecessary reactions, and has excellent oxidation resistance and chemical stability. Ru forms an alloy with other metal elements to provide mechanical strength and resistance stability.
a coexists with these elements and gives the alloy material extensibility;
It is supposed that the stress is made appropriate and the adhesion and toughness are increased.

The present inventors have found that when a heating resistor of an ink jet head is formed by using a non-single-crystal Ir-Ru-Ta substance outside the above-mentioned specific composition range, the following problems are caused. Confirmed through experiments. That is, resistance to cavitation impact, resistance to erosion due to cavitation, electrochemical stability, chemical stability, heat resistance, adhesion, internal stress, etc. are not appropriate, and when used as a heating resistor of an inkjet head. In particular, sufficient durability cannot be obtained when used as a heating resistor directly in contact with the ink. For example, Ir or R
When u is too large, peeling of the film may occur,
Conversely, when Ta is too large, the change in resistance may be severe.

[Embodiment Bc] The embodiment Bc of the present invention is directed to a heating resistor which is generated by energizing the heat energy used for ejecting ink by directly applying heat energy to the ink on the heating surface. In an ink jet head having an electrothermal transducer having a body, the heating resistor is substantially composed of a material containing Ir, Os and Ta in the following composition ratios.

17 atomic% ≦ Ir ≦ 73 atomic% 5 atomic% ≦ Os ≦ 58 atomic% 19 atomic% ≦ Ta ≦ 60 atomic% In this embodiment, Ir having excellent heat resistance, oxidation resistance, chemical stability, and the like. Prevents the occurrence of unnecessary reactions, Os imparts mechanical strength and forms stable oxides to provide melting resistance, and Ta coexists with these elements to give ductility to the alloy material. , Make the stress appropriate, adhesion,
It is supposed to increase toughness.

The present inventors have found that when a heating resistor of an ink jet head is formed by using a non-single-crystal Ir-Os-Ta substance outside the above-mentioned specific composition range, the following problems occur. Confirmed through experiments. That is, resistance to cavitation impact, resistance to erosion due to cavitation, electrochemical stability, chemical stability, heat resistance, adhesion, internal stress, etc. are not appropriate, and when used as a heating resistor of an inkjet head. In particular, sufficient durability cannot be obtained when used as a heating resistor directly in contact with the ink. For example, when the amount of Ir is too large, the peeling of the film may occur. On the other hand, when the amount of Os or Ta is too large, the resistance change may be severe.

[Embodiment Bd] The embodiment Bd of the present invention relates to a heating resistor which is generated by energizing the heat energy used for ejecting ink by directly applying heat energy to the ink on the heat acting surface. In an ink jet head having an electrothermal transducer having a body, the heating resistor is substantially composed of a material containing Ir, Re and Ta in the following composition ratios.

39 atomic% ≦ Ir ≦ 58 atomic% 9 atomic% ≦ Re ≦ 36 atomic% 22 atomic% ≦ Ta ≦ 51 atomic% In this embodiment, Ir having excellent heat resistance, oxidation resistance, chemical stability, and the like. Prevents the occurrence of unnecessary reactions, Re imparts mechanical strength and heat resistance, and Ta coexists with these elements to give ductility to the alloy material, making stress appropriate,
It is supposed that adhesion and toughness are increased.

The present inventors have found that the following problem arises when a heating resistor of an ink jet head is formed using a non-single-crystal Ir-Re-Ta substance outside the above-mentioned specific composition range. Confirmed through experiments. That is, resistance to cavitation impact, resistance to erosion due to cavitation, electrochemical stability, chemical stability, heat resistance, adhesion, internal stress, etc. are not appropriate, and when used as a heating resistor of an inkjet head. In particular, sufficient durability cannot be obtained when used as a heating resistor directly in contact with the ink. For example, when the amount of Ir is too large, the peeling of the film may occur. On the other hand, when the amount of Re or Ta is too large, the resistance change may be severe.

[Embodiment C] Embodiment C of the present invention is provided with a heat generating resistor which generates the above-mentioned heat energy used for discharging ink by directly applying heat energy to the ink on the heat acting surface. In the ink jet head having the electrothermal transducer, the heating resistor is substantially I
It is characterized by being composed of a material containing r, Y and Al in the following composition ratios.

54 atomic% ≦ Ir ≦ 85 atomic% 2 atomic% ≦ Y ≦ 18 atomic% 13 atomic% ≦ Al ≦ 30 atomic% In this embodiment, Ir having excellent heat resistance, oxidation resistance, chemical stability, etc. Prevents the occurrence of unnecessary reactions, Y forms an alloy with other metal elements to impart mechanical strength and resistance stability, and Al coexists with those elements to give ductility to the alloy material, It is supposed that the stress is made appropriate and the adhesion and toughness are increased.

The present inventors have found that when a heating resistor of an ink jet head is formed by using a non-single-crystal Ir-Y-Al material outside the above-mentioned specific composition range, the following problems occur. Confirmed through experiments. That is, resistance to cavitation impact, resistance to erosion due to cavitation, electrochemical stability, chemical stability, heat resistance, adhesion, internal stress, etc. are not appropriate, and when used as a heating resistor of an inkjet head. In particular, sufficient durability cannot be obtained when used as a heating resistor directly in contact with the ink. For example, when the amount of Ir is too large, peeling of the film may occur.
When the content of Al or Al is too large, the resistance change may be severe.

[Embodiment D] Embodiment D of the present invention is provided with a heat generating resistor for generating thermal energy, which is used for ejecting ink by directly applying thermal energy to the ink on the heat acting surface, by applying a current. In the ink jet head having the electrothermal transducer, the heating resistor is substantially I
It is characterized by being composed of a material containing r, Ru and Cr in the following composition ratios.

21 atomic% ≦ Ir ≦ 51 atomic% 17 atomic% ≦ Ru ≦ 42 atomic% 7 atomic% ≦ Cr ≦ 46 atomic% In this embodiment, Ir having excellent heat resistance, oxidation resistance, chemical stability, and the like. Prevents the occurrence of unwanted reactions, and has excellent oxidation resistance and chemical stability. Ru forms an alloy with other metal elements to impart mechanical strength, and Cr coexists with those elements to form an alloy. It is supposed that the material imparts extensibility, makes the stress appropriate, and increases the adhesion and toughness.

The present inventors have found that when a heating resistor of an ink jet head is formed by using a non-single-crystal Ir-Ru-Cr substance outside the above-described specific composition range, the following problems occur. Confirmed through experiments. That is, resistance to cavitation impact, resistance to erosion due to cavitation, electrochemical stability, chemical stability, heat resistance, adhesion, internal stress, etc. are not appropriate, and when used as a heating resistor of an inkjet head. In particular, sufficient durability cannot be obtained when used as a heating resistor directly in contact with the ink. For example, Ir or R
When u is too large, peeling of the film may occur,
Conversely, when there is too much Cr, the change in resistance may be severe.

[Embodiment E] The embodiment E of the present invention relates to an electric apparatus having a heating resistor which is generated by energizing the thermal energy used for ejecting the ink by directly applying thermal energy to the ink on the heat acting surface. In the ink jet head including the heat converter, the heating resistor is substantially composed of a material containing Pt and Ta in the following composition ratio.

In the present embodiment, Pt, which is excellent in heat resistance, oxidation resistance, chemical stability, etc., is prevented from generating an unnecessary reaction. , Ta impart mechanical strength and generate stable oxides to provide resistance to dissolution.

The present inventors have, through experiments, found that the following problems were encountered when a non-single-crystal Pt-Ta substance outside the above-mentioned specific composition range was used to form a heating resistor of an ink jet head. confirmed. That is, resistance to cavitation impact, resistance to erosion due to cavitation, electrochemical stability, chemical stability, heat resistance, adhesion, internal stress, etc. are not appropriate,
When used as a heating resistor of an ink jet head, particularly when used as a heating resistor directly in contact with ink, sufficient durability cannot be obtained. For example, when Pt is too large, peeling of the film may occur.
When the resistance is too large, the resistance change may be severe.

Thus, Ir and one specific element or Ir
The non-single-crystalline substance of the present invention, which contains and a specific two elements in a specific composition ratio, can be used for any kind of ink by organically acting these two or three elements. It can be used as a heating resistor that can be in direct contact for a long time.

The heating resistor according to the present invention is made of a non-single crystal alloy including the above-mentioned amorphous alloy, polycrystalline alloy, and a mixture thereof.

The thickness of the layer of the heating resistor in the present invention is:
The heat energy is appropriately determined so that an appropriate heat energy is generated effectively.
00 ° to 1 μm, more preferably 1000 ° to 5000
Å.

The heating resistor according to the present invention may have a surface layer, particularly a surface layer in contact with the ink, having the above-described composition, and the composition need not necessarily be uniform over the entire heating resistor. Absent. For example, even if the heating resistor is composed of a plurality of layers, and even if the composition has a distribution in the layer thickness direction, as long as the conditions described above are satisfied,
In addition to obtaining the effects of the present invention, it is possible to obtain a material having more excellent adhesion to a support. As an example, when the heating resistor according to the present invention includes Cr, Ta, Al or Ti, if the heating resistor layer has a multi-layer structure and the lower layer has more Cr, Ta, Al or Ti, Alternatively, even if the heating resistor has a single-layer structure, if the distribution of Cr, Ta, Al, or Ti in the layer thickness direction is varied so as to increase toward the lower side, the adhesion to the support can be reduced. preferable.

Further, generally, the surface or the inside of the layer may be exposed to the air, or may be oxidized or take in gas during the manufacturing process. And slight oxidation inside and A
The effect is not reduced by the incorporation of r.
Examples of such impurities include, for example, at least one element selected from C, N, Si, B, Na, Cl, and Fe, including Ar and O.

In addition, the heating resistor according to the present invention is formed by, for example, DC sputtering, RF sputtering, ion beam sputtering, vacuum evaporation, CVD, or the like, in which respective materials are simultaneously or alternately deposited. Can be.

[0105]

Next, an example of an ink-jet head according to the present invention, which is excellent in thermal efficiency and signal responsiveness, using an alloy material having the above-described composition as a heating resistor will be described with reference to the drawings.

FIG. 1A is a schematic front view of an example of an ink jet head viewed from the ejection port side, and FIG.
It is XY sectional drawing in (a).

The ink jet head of this example has a substrate 1
01 on a support having a lower layer 102 provided on the surface thereof,
A heating resistor layer 103 having a predetermined shape and electrodes 104,
105, and a protective layer 106 covering at least the electrodes 104 and 105 of the electrothermal converter is laminated, and a liquid path 111 communicating with the discharge port 108 is further provided thereon. Grooved plate 1 with recess
07 are joined.

The electrothermal converter in this example is composed of the heating resistor layer 103 and the electrodes 10 connected to the heating resistor layer 103.
4, 105 and a protective layer 106 provided as needed. In addition, the substrate for an ink jet head includes a support having a substrate 101 and a lower layer 102, an electrothermal converter, and a protective layer 106. In the case of the ink jet head of this example, the heat acting surface 109 that directly transmits heat to the ink is formed on the electrode 10 of the heating resistor layer 103.
The portion (heat generating portion) sandwiched between the heat generating portions 4 and 105 is substantially equal to the surface in contact with the ink.
It corresponds to the part not covered with.

The lower layer 102 is provided if necessary.
It has a function of adjusting the amount of heat escaping to the substrate 101 side and efficiently transmitting the heat generated in the heat generating portion to the ink.

The electrodes 104 and 105 are electrodes for supplying a current to the heat generating resistor layer 103 so as to generate heat from the heat generating portion. In this example, the electrode 104 is a common electrode for each heat generating portion, and the electrode 105 is each heat generating portion. It is a selection electrode for individually energizing the generator.

The protective layer 106 is provided as necessary in order to prevent the electrodes 104 and 105 from being chemically attacked by being in contact with the ink and from being short-circuited between the electrodes through the ink.

FIG. 2A is a schematic plan view of the ink jet head substrate at the stage where the heating resistor layer 103 and the electrodes 104 and 105 are provided. FIG.
(B) is a schematic plan view of the inkjet head substrate at the stage where the protective layer 106 is provided on those layers.

In this ink-jet head, since the heat-generating resistor layer 103 is made of the alloy material having the above-described composition, the ink-jet head has a good structure despite the direct contact between the ink and the heat-acting surface 109. It has excellent durability.
As described above, if the heat generating portion of the heat generating resistor, which is a heat energy source, is configured to be in direct contact with the ink, the heat generated in the heat generating portion can be directly transmitted to the ink, and the heat generated by the heat generating portion can be transmitted through the protective layer. Heat transfer can be performed extremely efficiently as compared with the configuration in which the heat is transmitted to the ink.

As a result, the power consumption of the heating resistor can be kept low, and the temperature rise of the ink jet head can be reduced. In addition, the response to the input signal (discharge command signal) to the electrothermal converter is improved,
A foaming state required for discharge can be stably obtained.

The configuration of the electrothermal converter having a heating resistor formed by using the alloy material according to the present invention is not limited to the examples shown in FIGS. 1 and 2, but may take various forms. obtain.

FIG. 3 is a schematic cross-sectional view showing the configuration of the main part of another example of the ink jet head. In this example, the substrate 301
A heating resistor layer 103 having a predetermined shape and electrodes 104 and 10 are formed on a support having a lower layer 302 provided on the surface of the substrate.
5 is formed. In the ink jet head substrate of this embodiment, the electrodes 304,
Each of the electrodes 305 is covered with a heat-generating resistor layer 303 of an alloy material having the above composition, thereby omitting the protective layer of the electrode.

In the example shown in FIGS. 1A and 1B, the direction in which the ink is supplied onto the heat acting surface 109 and the ejection using the heat energy generated from the heat generating portion. Although the direction in which the ink is ejected from the outlet 108 is substantially the same, the configurations of the ejection port and the liquid path of the inkjet head are not limited thereto, and these directions may be different.

FIG. 4 is a schematic sectional view showing the configuration of the main part of another example of the ink jet head. This example is shown in FIG.
5A and 5B are cross-sectional views taken along the line AB in FIG. As shown in FIG. 4 (b), a configuration in which the two directions of the discharge port and the liquid path of the inkjet head form a substantially right angle is also possible. In FIG. 4, the discharge port plate 410
Is a plate of an appropriate thickness provided with a discharge port, and a support member 412 supports the discharge port plate 410. Other configurations are the same as those in the examples shown in FIGS. 1 and 2, and therefore, the same reference numerals as those in FIGS.

The ink jet head of the present invention may have a plurality of ink discharge structural units having discharge ports, liquid paths, and heat generating portions as shown in FIGS. 1 and 3. For this reason, the present invention is particularly effective when the ink ejection units are arranged at a high density, for example, at least 8 nozzles / mm, and more preferably at least 12 nozzles / mm. A so-called full-line type inkjet head having a configuration in which the ink discharge structural units are arranged over the entire width of the print area of the recording member, for example, can be given as an example having a plurality of the ink discharge structural units.

In the case of such a so-called full line ink jet head in which a plurality of ejection ports are provided corresponding to the width of the recording area of the recording member, in other words, the number of ejection ports is 1000 or more, or 2000 or more. In the case of an ink-jet head, the variation in the resistance value of each heat-generating portion in one ink-jet head affects the uniformity of the volume of the droplet ejected from the ejection port, which is a cause of non-uniform image density. May be. However, in the heating resistor according to the present invention, the desired specific resistance value can be controlled with good controllability.
Since the variation in the resistance value in one ink jet head can be obtained so as to be extremely small, the above-described problem can be solved with a much better condition.

As described above, the heating resistor according to the present invention is required to have a higher recording speed (for example, a printing speed of 30 cm / sec or more, furthermore, a printing speed of 60 cm / sec or more) and a higher density. With the tendency of the number of ejection ports of the head to increase, it becomes more and more significant.

Further, as disclosed in US Pat. No. 4,429,321, in an ink jet head in which a functional element is structurally provided inside the surface of an ink jet head substrate, an ink jet head is used. It is one of the important points that the entire electric circuit is accurately formed as designed, and that the function of the functional element is easily maintained in a normal state. It is valid. This is because, as described above, in the heating resistor according to the present invention, a desired specific resistance can be obtained with good controllability and with a very small variation in resistance value in one inkjet head. This is because the entire electric circuit can be accurately formed as designed.

In addition, the heating resistor according to the present invention is extremely effective also for a disposable cartridge type ink jet head integrally provided with an ink tank for storing ink supplied to the heat acting surface. This is because the ink jet head of this embodiment is required to have a low running cost of the entire ink jet apparatus to which the ink jet head is mounted. However, as described above, the heating resistor according to the present invention has a configuration in which the heat generating resistor directly contacts the ink. Therefore, the efficiency of heat transfer to the ink can be improved, so that the power consumption of the entire apparatus can be reduced, and it is possible to easily meet the above demand.

Incidentally, the ink-jet head of the present invention may have a form in which a protective layer is provided on a heating resistor. In this case, although the heat transfer efficiency to the ink is somewhat sacrificed, an ink jet head can be obtained which is more excellent in terms of durability of the electrothermal converter and resistance change of the heating resistor due to electrochemical reaction. From such a viewpoint, when the protective layer is provided, it is preferable that the entire layer thickness be within the range of 1000 to 5 μm. Specifically, the protective layer includes a Si-containing insulating layer made of SiO ₂ , SiN, or the like provided on the heating resistor, and an Al layer provided on the layer so as to form a heat acting surface. Is a preferred example.

Further, the present invention is not limited to the generation of thermal energy used for discharging ink, and may be used as a heater for heating a desired portion in an ink jet head provided as needed. It is particularly preferably used when such a heater is in direct contact with the ink.

By mounting the ink jet head having the above-described configuration on the apparatus main body and applying a signal from the apparatus main body to the ink jet head, an ink jet recording apparatus capable of performing high-speed recording and high-quality recording can be obtained.

FIG. 5 is a schematic perspective view showing an example of an ink jet recording apparatus IJRA to which the present invention is applied. The driving force transmission gear 5 interlocks with the forward / reverse rotation of the driving motor 5013.
Lead screw 5 rotating through 011,5009
Carriage H engaging with the spiral groove 5004 of FIG.
C has a pin (not shown) and is reciprocated in the directions of arrows a and b. Reference numeral 5002 denotes a paper pressing plate, which presses the paper against the platen 5000 in the carriage movement direction.
Reference numerals 5007 and 5008 denote photocouplers for confirming the presence of a carriage lever 5006 in this region, and
Home position detecting means for switching the rotation direction of the camera. 5016 is a cartridge type recording inkjet head IJ in which an ink tank is integrally provided.
Reference numeral 5015 denotes a suction unit for sucking the inside of the cap, which performs suction recovery of the recording ink jet head through the opening 5023 in the cap. Reference numeral 5017 denotes a cleaning blade. Reference numeral 5019 denotes a member that allows the blade to move in the front-rear direction. These members are supported by a main body support plate 5018. It goes without saying that the blade is not limited to this form, and a known cleaning blade can be applied to this embodiment. Reference numeral 5012 denotes a lever for starting suction for suction recovery, which moves with the movement of the cam 5020 which engages with the carriage, and controls the movement of the driving force from the drive motor by a known transmission means such as clutch switching. Is done. The CPU that gives a signal to the electrothermal transducer provided in the inkjet head IJC and controls the driving of each mechanism described above is provided on the apparatus main body side (not shown).

In the ink-jet head and the ink-jet apparatus of the present invention, portions other than the above-described heating resistor can be formed by using known materials and methods.

[0129] Example Hereinafter, a more detailed description of the present invention by way of specific examples.

[Example Corresponding to Aspect A] (Example A-1) One Si single crystal substrate (manufactured by Wacker) and one Si single crystal having a 2.5 μm thick SiO ₂ film formed on the surface A crystal substrate (manufactured by Wacker) is set on a substrate holder 602 in a film forming chamber 601 of the above-described high-frequency sputtering apparatus shown in FIG. On a Cr target 606, which is a high-purity raw material, and two Ir targets 60, which are Ir sheets of similar purity.
Co-sputtering was carried out under the following conditions using a composite target on which an alloy layer 7 was placed to form an alloy layer having a thickness of about 2000 mm.

Co-sputtering conditions Target area ratio Cr: Ir = 61: 39 Target area 5 inch (127 mm) φ High frequency power 1000 W Film formation time 12 minutes Substrate set temperature 50 ° C. Base pressure 2.6 × 10 ⁻⁴ Pa or less Sputter gas pressure 0.4 Pa (argon) Further, in the case of a film formed on a substrate with a SiO ₂ film, the target is continuously switched to only Al, and an Al layer serving as electrodes 104 and 105 (see FIG. 1) is formed on the alloy layer. Was formed to a thickness of 6000 ° by sputtering according to a conventional method, and the sputtering was terminated.

Thereafter, a photoresist is formed twice in a predetermined pattern by a photolithography technique.
1-layer wet etching, the second time dry etching of the heating resistor layer by ion milling, the heating resistor 103 having the shape shown in FIG. 1 (b) and FIG.
04, 105 were formed. The size of the heat generating part is 30μm ×
170 μm, the pitch of the heat generating portions was 125 μm, and 24 heat generating portions were arranged in a line to form one group, and a plurality of such groups were formed on the SiO ₂ film substrate.

Next, an SiO ₂ film is formed thereon by sputtering, and thereafter, the SiO ₂ film is covered with electrodes by 10 μm on both sides of the heat generating portion using photolithography and reactive ion etching. To form a protective layer 106. Heat generator 10
The dimensions of 9 are 30 μm × 150 μm.

The product in such a state was cut out for each of the groups to prepare a number of bases for an ink jet head, and a part of them was subjected to an evaluation test described later.

FIG. 1 (a) and FIG.
In order to form the discharge port 108 and the liquid path 111 shown in FIG. 3B, the glass grooved plate 107 was joined to obtain an ink jet head.

When the obtained ink-jet heads were mounted on a recording apparatus having a known configuration, and a recording operation was performed, high-quality images were obtained with good ejection stability and good signal responsiveness. I was able to. Further, the durability in use in this device was also good.

(1) Measurement of Film Composition EPMA (electron probe microanalysis) was performed on the heat-acting portion without the protective film using the above-described measuring device under the following conditions, and the composition of the material was clarified.

Acceleration voltage: 15 kV Probe diameter: 10 μm Probe current: 10 nA However, quantitative analysis is performed only for the main constituent elements of the target as a raw material, and it is attached to argon or the surface generally incorporated in the film by sputtering. I did not go for carbon or oxygen that seems to be. In addition, for all other impurity elements, the detection error of the analyzer (about 0.2% by weight) was obtained by using both quantitative analysis and qualitative analysis.
It was confirmed that:

(2) Measurement of film thickness A stylus type surface shape measuring device (TENCOR INSTRUUM)
The measurement was performed by measuring the level difference using an alpha-step 200 manufactured by ENTS.

(3) Measurement of Crystallinity The X-ray diffraction pattern of the sample formed on the Si single crystal substrate was measured by using the above-mentioned measuring apparatus. (C), those which seem to be in an amorphous state without a sharp peak (A), and those which seem to be a mixture of both (M)
Classified into types.

(4) Measurement of specific resistance Four-probe resistance meter (K-705R manufactured by Kyowa Riken Co., Ltd.)
It was calculated from the sheet resistance value and the film thickness measured in L).

(5) Measurement of Density The change in the weight of the substrate before and after film formation was measured using INABA SEISAK.
The measurement was carried out using an ultra micro balance manufactured by USHO LTD, and the value was calculated from the film area and film thickness.

(6) Measurement of internal stress The warpage of two elongated glass substrates was measured before and after film formation, and the amount of change was measured and the length, thickness, Young's modulus, Poisson's ratio, and film thickness of the glass substrates were measured. From the calculation.

(7) Foaming test in low-conductivity ink The portion of the device (ink-jet head substrate) provided with the protective layer 106 at the stage where the ejection ports and liquid paths obtained above were not formed was replaced with the following. Low conductivity ink (clear ink)
Immersed in the electrode 104, 105 from an external power source
A rectangular voltage of 5 sec and a frequency of 5 kHz was applied while gradually increasing the voltage to obtain a foaming threshold voltage (V _th ).

Ink composition Water 70 parts by weight Diethylene glycol 30 parts by weight Ink conductivity 25 μS / cm Next, in this ink, a pulse voltage having a voltage 1.1 times V _th was applied, and bubbling was repeated. Action section 109
Were measured for the number of applied pulses until breakage, and their average value was calculated (hereinafter, such a foaming durability test in ink is also commonly referred to as a “pond test”). In Comparative Example A-1, which will be described later, the ratio obtained by dividing the average value calculated in this example by 2/5 of the average value calculated in the same manner as in this example is the first ratio.
It is shown in the table.

The ink having the above composition has a small conductivity, so that the influence of the electrochemical reaction is small. The main factor of the breakage is erosion due to cavitation or thermal shock, and the durability against these can be known.

(8) Foaming durability test in high conductivity ink Next, a foaming durability test was performed in the following high conductivity ink (here, black ink) in the same manner as (7). Comparative example A-1
Table 1 shows the ratios obtained by dividing the average value calculated in the present example in the same manner as (7) by the value of 2/5 of the average value calculated by the foaming durability test using the low conductivity ink in Table 1. Shown in At this time, not only the number of applied pulses but also the change in the resistance value of the heating resistor before and after the application of the pulse signal was measured.

Ink composition Water 68 parts by weight Diethylene glycol 30 parts by weight Black dye (CI food black 2) 2 parts by weight PH adjuster (sodium acetate) Trace amount (PH6)
Adjusted to ~ 7) Ink conductivity 2.6mS
In this measurement, the conductivity of the ink is high, and a current flows in the ink when a voltage is applied. Therefore, in addition to erosion due to cavitation, an electrochemical reaction is a major factor that damages the heating resistor.

(9) Step stress test (SST) The pulse width and frequency are the same as in (7) and (8), and the pulse voltage is increased every fixed step (6 × 10 ⁵ pulses for 2 minutes). Perform a stress test in the air,
Breaking voltage (V _break) the ratio of the V _th obtained in (7) (M) determined to estimate the temperature that the heat acting surface reaches at V _{bre ak.} Thereby, the heat resistance and the thermal shock resistance in the air can be known.

(10) Evaluation with Actual Inkjet Head Example of Printer Driving Conditions Number of ejection ports 24 Driving frequency 2 kHz Driving pulse width 20 μsec Driving voltage 1.2 times the ejection threshold voltage (V _th ) Same item (i) Print quality Characters and other characters are printed using an inkjet head and visually judged. When extremely good printing was obtained using the ink jet head, it was evaluated as ○, when good printing was obtained, as Δ, and when troubles such as non-ejection or blurring occurred, the evaluation was evaluated as ×.

(Ii) Durability Each of the heating elements was printed using 2,000 sheets of A4 size using three inkjet heads.
In the three ink-jet heads, extremely good and normal printing was obtained. In the three ink-jet heads, the heat-generating resistor in which any one of the heat-generating resistors had an abnormality such as failure was evaluated as x.

(11) The criteria for the comprehensive evaluation are as follows.

A: Result of durability test by pond test in low conductivity ink: ≧ 6 × 10 ⁷ Result of durability test by pond test in high conductivity ink: ≧ 3 × 10 ⁷ Resistance change: ≦ 5%, SSTM: ≧ 1.7, and both the evaluation results of print quality and durability are あ る.

X: As a result of the pond test in the high-conductivity ink, any of the resistance change and SSTM was evaluated as less than Δ in the overall evaluation, or the print quality and the durability were evaluated as x. in the case of.

(Examples A-2 to A-4) Example A except that the area ratio of each raw material in the sputtering target was variously changed as shown in Table 1 when forming the heating resistor.
A device (substrate for ink jet head) and an ink jet head were produced in the same manner as -1. Table 1 shows the evaluation results of the obtained devices, which were performed in the same manner as in Example A-1. In addition, each of the inkjet heads manufactured using these devices had good recording characteristics and durability.

(Examples A-5 to A-8) Examples A-1 to A-8
Sputtering SiO ₂ on the heating resistor layer of the inkjet head substrate manufactured in the same manner as the inkjet head substrate manufactured in each of A-4 by using the sputtering apparatus of FIG. 6 described above. To provide a 1.0 μm thick SiO ₂ protective layer,
Substrates for inkjet heads and inkjet heads were produced in the same manner as in the respective Examples except that a Ta protective layer having a thickness of 0.5 μm was provided by sputtering Ta on the O ₂ protective layer.

An evaluation test was performed on the obtained ink-jet head substrate and the ink-jet head in the same manner as in Example A-1. As a result, the ink immersion test (a pond test) was performed in comparison with the example in which the protective layer was not provided. The results of the durability test according to ()) slightly improved both in the case of the low-conductivity ink and in the case of the high-conductivity ink. Further, the change in resistance was smaller than that of the example without the protective layer. However, SST's M has become smaller overall.

As described above, by providing the protective layer,
It can be seen that the durability and the resistance change mainly due to the electrochemical reaction are further improved.

The reason why M in SST was reduced was that the foaming threshold voltage (V _th ), which is the denominator of M, increased because the provision of the protective layer reduced the heat transfer efficiency to ink. Imagine.

(Comparative Examples A-1 to A-2) Example A except that the area ratio of each raw material in the sputtering target was variously changed as shown in Table 1 when forming the heating resistors.
A device (substrate for ink jet head) and an ink jet head were produced in the same manner as -1.

For each of the obtained devices, Example A-
Table 1 shows the evaluation results performed in the same manner as in Example 1.

(Comparative Example A-3) When forming a heating resistor,
A device (substrate for inkjet head) and an inkjet head were produced in the same manner as in Example A-1, except that a Cr target was used as the sputtering target.

For each of the obtained devices, Example A-
Table 1 shows the evaluation results performed in the same manner as in Example 1.

[Example Corresponding to Aspect Ba] (Example Ba-a-1) One Si single crystal substrate (manufactured by Wacker) and a 2.5 μm thick SiO ₂ film formed on the surface Sixty single-crystal Si substrates (manufactured by Wacker Inc.) were set on a substrate holder 602 in the film forming chamber 601 of the high-frequency sputtering apparatus shown in FIG. Co-sputtering is performed under the following conditions using a composite target in which an Ir target 607 and a Ta target 620, which are Ir sheets of similar purity, are placed on a Ti target 606, which is a high-purity raw material of 9% by weight or more. About 200
An alloy layer having a thickness of 0 ° was formed.

Co-sputtering conditions Target area ratio Ti: Ta: Ir = 43: 37:
20 Target area 5 inch (127 mm) φ High frequency power 1000 W Substrate set temperature 50 ° C. Film formation time 12 minutes Base pressure 2.6 × 10 ⁻⁴ Pa or less Sputter gas pressure 0.4 Pa (argon) Further, on a substrate with a SiO ₂ film With respect to the formed film, the target is continuously switched to only Al, and an Al layer serving as the electrodes 104 and 105 (see FIG. 1) is formed on the alloy layer to a thickness of 6000 ° by sputtering according to a conventional method. The sputtering was terminated.

Thereafter, a photoresist is formed twice in a predetermined pattern by a photolithography technique.
1-layer wet etching, the second time dry etching of the heating resistor layer by ion milling, the heating resistor 103 having the shape shown in FIG. 1 (b) and FIG.
04, 105 were formed. The size of the heat generating part is 30μm ×
170 μm, the pitch of the heat generating portions was 125 μm, and 24 heat generating portions were arranged in a line to form one group, and a plurality of such groups were formed on the SiO ₂ film substrate.

Next, an SiO ₂ film is formed thereon by sputtering, and then this SiO ₂ film is covered with electrodes by 10 μm on both sides of the heat generating portion using photolithography and reactive ion etching. To form a protective layer 106. Heat generator 10
The dimensions of 9 are 30 μm × 150 μm.

The product in such a state was cut out for each of the groups to prepare a large number of bases for an ink jet head, and a part thereof was subjected to an evaluation test described later. Table 2 shows the evaluation results of the obtained devices (substrate for inkjet head) performed in the same manner as in Example A-1.

FIG. 1 (a) and FIG.
In order to form the discharge port 108 and the liquid path 111 shown in FIG. 3B, the glass grooved plate 107 was joined to obtain an ink jet head.

When these ink jet heads thus obtained were mounted on a recording apparatus having a known configuration and a recording operation was performed, recording was performed with good ejection stability and good signal responsiveness, and a high-quality image was obtained. I was able to. Further, the durability in use in this device was also good.

(Examples Ba-2 to Ba-6) Examples B-a-2 to B-a-6 were carried out except that the area ratio of each raw material in the sputtering target was variously changed as shown in Table 2 when forming the heating resistor. A device (substrate for inkjet head) and an inkjet head were produced in the same manner as in a-1. Table 2 shows the evaluation results of the obtained devices, which were performed in the same manner as in Example Ba-1. In addition, each of the inkjet heads manufactured using these devices had good recording characteristics and durability.

(Examples Ba-7 to Ba-12) For an ink jet head manufactured in the same manner as the ink jet head substrates manufactured in Examples Ba-1 to Ba-6, respectively. The above-described FIG.
Using a sputtering apparatus of (1), a SiO ₂ protective layer having a thickness of 1.0 μm was provided by sputtering SiO _2, and a Ta protective layer having a thickness of 0.5 μm was further formed by sputtering Ta on the SiO ₂ protective layer. A substrate for an ink jet head and an ink jet head were produced in the same manner as in each of the examples except for the provision.

An evaluation test was carried out on the obtained ink-jet head substrate and the ink-jet head in the same manner as in Example Ba-1. The results of the durability test by the pond test improved little by little with both the low-conductivity ink and the high-conductivity ink. However, M of SST is
Overall smaller.

As described above, by providing the protective layer,
It can be seen that the durability was further improved.

The reason why the M of the SST was reduced was that the foaming threshold voltage (V _th ), which is the denominator of the M, was increased because the provision of the protective layer lowered the heat transfer efficiency to the ink. Imagine.

(Comparative Examples Ba-1 to Ba-2) Example B-a-1 except that the area ratio of each raw material in the sputtering target was variously changed as shown in Table 2 when forming the heating resistors. A device (substrate for inkjet head) and an inkjet head were produced in the same manner as in a-1. Table 2 shows the evaluation results of the obtained devices, which were performed in the same manner as in Example Ba-1.

(Comparative Examples Ba-3 to Ba-5) When a heating resistor was formed, Ti was used as a sputtering target.
A device (base for inkjet head) and a substrate (ink-jet head base) were prepared in the same manner as in Example Ba-1, except that a Ta sheet was provided on a target and the area ratio of each raw material in the sputtering target was changed as shown in Table 2. An inkjet head was manufactured. Table 2 shows the evaluation results of the obtained devices, which were performed in the same manner as in Example Ba-1.

(Comparative Example Ba-6) When forming a heating resistor, a sputtering target having an Ir sheet provided on a Ti target was used, and the area ratio of each raw material in the sputtering target was as shown in Table 2. A device (substrate for an ink jet head) and an ink jet head were produced in the same manner as in Example Ba-1 except for the change. For each device obtained, Example B
Table 2 shows the results of the evaluation performed in the same manner as in -a-1.

(Comparative Examples Ba-7 to Ba-10) At the time of forming the heating resistor, T was used as a sputtering target.
a Using an Ir sheet provided on a target, the area ratio of each raw material in the sputtering target was set to the second
A device (substrate for ink jet head) and an ink jet head were produced in the same manner as in Example Ba-1 except for the changes as shown in the table. For each of the obtained devices, an evaluation result performed in the same manner as in Example Ba-1 was used.
It is shown in the table.

(Comparative Example Ba-11) A device (substrate for ink jet head) and an ink jet head were formed in the same manner as in Example Ba-1 except that a Ti target was used as a sputtering target when forming the heating resistor. A head was manufactured. Table 2 shows the evaluation results of the obtained devices, which were performed in the same manner as in Example Ba-1.

(Comparative Example Ba-12) A device (substrate for an ink jet head) and an ink jet head were prepared in the same manner as in Example Ba-1 except that a Ta target was used as a sputtering target when forming the heating resistor. A head was manufactured. Table 2 shows the evaluation results of the obtained devices, which were performed in the same manner as in Example Ba-1.

[Example Corresponding to Aspect Bb] (Example Bb-1) One Si single crystal substrate (manufactured by Wacker) and a 2.5 μm thick SiO ₂ film formed on the surface Sixty single-crystal Si substrates (manufactured by Wacker Inc.) were set on a substrate holder 602 in the film forming chamber 601 of the high-frequency sputtering apparatus shown in FIG. Co-sputtering is performed under the following conditions using a composite target in which Ir targets 607 and Ru targets 620, which are Ir sheets of similar purity, are placed on a Ta target 606, which is a high-purity raw material of 9% by weight or more. About 200
An alloy layer having a thickness of 0 ° was formed.

Co-sputtering conditions Target area ratio Ta: Ru: Ir = 62: 13:
25 Target area 5 inch (127 mm) φ High frequency power 1000 W Deposition time 12 minutes Substrate set temperature 50 ° C. Base pressure 2.6 × 10 ⁻⁴ Pa or less Sputter gas pressure 0.4 Pa (argon) Further, on a substrate with SiO ₂ film With respect to the formed film, the target is continuously switched to only Al, and an Al layer serving as the electrodes 104 and 105 (see FIG. 1) is formed on the alloy layer to a thickness of 6000 ° by sputtering according to a conventional method. The sputtering was terminated.

Thereafter, a photoresist is formed twice in a predetermined pattern by a photolithography technique.
1-layer wet etching, the second time dry etching of the heating resistor layer by ion milling, the heating resistor 103 having the shape shown in FIG. 1 (b) and FIG.
04, 105 were formed. The size of the heat generating part is 30μm ×
170 μm, the pitch of the heat generating portions was 125 μm, and 24 heat generating portions were arranged in a line to form one group, and a plurality of such groups were formed on the SiO ₂ film substrate.

Next, an SiO ₂ film is formed thereon by sputtering, and then this SiO ₂ film is covered with electrodes by 10 μm on both sides of the heat generating portion by using photolithography technology and reactive ion etching. To form a protective layer 106. Heat generator 10
The dimensions of 9 are 30 μm × 150 μm.

The product in such a state was cut out for each of the groups to prepare a large number of ink jet head substrates, and a part of them was subjected to an evaluation test described later. Table 3 shows the evaluation results of the obtained devices (substrate for ink jet head) performed in the same manner as in Example A-1.

FIG. 1 (a) and FIG.
In order to form the discharge port 108 and the liquid path 111 shown in FIG. 3B, the glass grooved plate 107 was joined to obtain an ink jet head.

When the obtained ink-jet heads were mounted on a recording apparatus having a known configuration and a recording operation was performed, recording was performed with good ejection stability and with good signal response, and high-quality images were obtained. I was able to. Further, the durability in use in this device was also good.

(Examples B-b-2 to B-b-6) Examples B-b-2 to B-b-6 were carried out except that the area ratio of each raw material in the sputtering target was variously changed as shown in Table 3 when forming the heating resistor. A device (substrate for ink jet head) and an ink jet head were produced in the same manner as in b-1. Table 3 shows the evaluation results of the obtained devices, which were performed in the same manner as in Example B-b-1. In addition, each of the inkjet heads manufactured using these devices had good recording characteristics and durability.

(Examples B-b-7 to B-b-12) For an ink-jet head manufactured in the same manner as the ink-jet head bases manufactured in Examples B-b-1 to B-b-6, respectively. The above-described FIG.
Using a sputtering apparatus of (1), a SiO ₂ protective layer having a thickness of 1.0 μm was provided by sputtering SiO _2, and a Ta protective layer having a thickness of 0.5 μm was further formed by sputtering Ta on the SiO ₂ protective layer. A substrate for an ink jet head and an ink jet head were produced in the same manner as in each of the examples except for the provision.

An evaluation test was performed on the obtained ink-jet head substrate and the ink-jet head in the same manner as in Example B-b-1. The results of the durability test by the pond test improved little by little with both the low-conductivity ink and the high-conductivity ink. However, M of SST is
Overall smaller.

As described above, by providing the protective layer,
It can be seen that the durability was further improved.

The reason why the M of the SST was reduced was that the foaming threshold voltage (V _th ), which is the denominator of the M, was increased because the heat conduction efficiency to the ink was reduced by providing the protective layer. Imagine.

(Comparative Example B-b-1) When forming a heating resistor, a sputtering target provided with a Ru sheet on a Ta target was used, and the area ratio of each raw material in the sputtering target was as shown in Table 3. A device (substrate for ink jet head) and an ink jet head were produced in the same manner as in Example B-b-1, except for the change.

For each of the obtained devices, Example B-
Table 3 shows the evaluation results performed in the same manner as in b-1.

(Comparative Examples BB-2 to BB-4) When forming a heating resistor, Ta was used as a sputtering target.
A device (substrate for inkjet head) and a device (ink-jet head base) were prepared in the same manner as in Example B-b-1, except that an Ir sheet was provided on a target, and the area ratio of each raw material in the sputtering target was changed as shown in Table 3. An inkjet head was manufactured.

For each of the obtained devices, Example B-
Table 3 shows the evaluation results performed in the same manner as in b-1.

(Comparative Example Bb-5) A device (substrate for an ink jet head) and an ink jet head were prepared in the same manner as in Example B-b-1 except that a Ta target was used as a sputtering target at the time of forming the heating resistor. Produced.

For each of the obtained devices, Example B-
Table 3 shows the evaluation results performed in the same manner as in b-1.

[Example Corresponding to Aspect B-c] (Example B-c-1) One Si single crystal substrate (manufactured by Wacker) and one sheet having a 2.5 μm thick SiO film formed on the surface 6 was set on a substrate holder 602 in the film forming chamber 601 of the above-described high-frequency sputtering apparatus shown in FIG. 6 as a sputtering substrate 603 at the time of sputtering. Co-sputtering is performed under the following conditions using a composite target in which an Ir target 607 and an Os target 620, which are Ir sheets of similar purity, are placed on a Ta target 606, which is a high-purity raw material of not less than weight%. About 2000
An alloy layer having a thickness of Å was formed.

Co-sputtering conditions Target area ratio Ta: Os: Ir = 43: 37:
20 Target area 5 inch (127 mm) φ High frequency power 1000 W Substrate set temperature 50 ° C. Film formation time 12 minutes Base pressure 2.6 × 10 ⁻⁴ Pa or less Sputter gas pressure 0.4 Pa (argon) Further, on a substrate with a SiO ₂ film With respect to the formed film, the target is continuously switched to only Al, and an Al layer serving as the electrodes 104 and 105 (see FIG. 1) is formed on the alloy layer to a thickness of 6000 ° by sputtering according to a conventional method. The sputtering was terminated.

Thereafter, a photoresist is formed twice in a predetermined pattern by a photolithography technique.
1-layer wet etching, the second time dry etching of the heating resistor layer by ion milling, the heating resistor 103 having the shape shown in FIG. 1 (b) and FIG.
04, 105 were formed. The size of the heat generating part is 30μm ×
170 μm, the pitch of the heat generating portions was 125 μm, and 24 heat generating portions were arranged in a line to form one group, and a plurality of such groups were formed on the SiO ₂ film substrate.

Next, an SiO ₂ film is formed thereon by sputtering, and then this SiO ₂ film is covered with electrodes by 10 μm on both sides of the heat generating portion using photolithography and reactive ion etching. To form a protective layer 106. Heat generator 10
The dimensions of 9 are 30 μm × 150 μm.

The product in such a state was cut out for each of the above groups to produce a large number of ink jet head substrates, and a part of them was subjected to an evaluation test described later. Table 4 shows the results of the evaluations of the respective devices (bases for inkjet heads) obtained in the same manner as in Example A-1.

FIG. 1 (a) and FIG.
In order to form the discharge port 108 and the liquid path 111 shown in FIG. 3B, the glass grooved plate 107 was joined to obtain an ink jet head.

When these obtained ink jet heads were mounted on a recording apparatus having a known configuration and a recording operation was performed, recording was performed with good ejection stability and good signal responsiveness, and a high-quality image was obtained. I was able to. Further, the durability in use in this device was also good.

(Examples Bc-2 to Bc-5) Example B-c-2 except that the area ratio of each raw material in the sputtering target was variously changed as shown in Table 4 when forming the heating resistor. A device (substrate for ink jet head) and an ink jet head were produced in the same manner as in c-1. Table 4 shows the evaluation results of the obtained devices, which were performed in the same manner as in Example B-c-1. In addition, each of the inkjet heads manufactured using these devices had good recording characteristics and durability.

(Examples Bc-6 to Bc-10) Ink jet heads manufactured in the same manner as the ink jet head substrates manufactured in Examples Bc-1 to Bc-5, respectively. The above-described FIG.
Using a sputtering apparatus of (1), a SiO ₂ protective layer having a thickness of 1.0 μm was provided by sputtering SiO _2, and a Ta protective layer having a thickness of 0.5 μm was further formed by sputtering Ta on the SiO ₂ protective layer. A substrate for an ink jet head and an ink jet head were produced in the same manner as in each of the examples except for the provision.

An evaluation test was performed on the obtained ink-jet head substrate and the ink-jet head in the same manner as in Example B-c-1, and the immersion test in the ink (in comparison with the example without the protective layer) was performed. The results of the durability test by the pond test improved little by little with both the low-conductivity ink and the high-conductivity ink. However, M of SST is
Overall smaller.

As described above, by providing the protective layer,
It can be seen that the durability was further improved.

[0211] The reason why the M of the SST was reduced was that the foaming threshold voltage (V _th ), which is the denominator of the M, was increased because the provision of the protective layer reduced the heat transfer efficiency to the ink. Imagine.

(Comparative Example Bc-1) Example Bc except that the area ratio of each raw material in the sputtering target was variously changed as shown in Table 4 when the heating resistor was formed.
A device (substrate for ink jet head) and an ink jet head were produced in the same manner as -1. Table 4 shows the evaluation results of the obtained devices, which were performed in the same manner as in Example B-c-1.

(Comparative Examples Bc-2 to Bc-4) When forming a heating resistor, Ta was used as a sputtering target.
A device (base for inkjet head) and a device (ink-jet head base) were prepared in the same manner as in Example B-c-1, except that an Os sheet was provided on a target, and the area ratio of each raw material in the sputtering target was changed as shown in Table 4. An inkjet head was manufactured. Table 4 shows the evaluation results of the obtained devices, which were performed in the same manner as in Example B-c-1.

(Comparative Examples Bc-5 to Bc-8) At the time of forming the heating resistor, Ta was used as a sputtering target.
A device (substrate for an ink jet head) and a device were prepared in the same manner as in Example B-c-1 except that an Ir sheet was provided on a target, and the area ratio of each raw material in the sputtering target was changed as shown in Table 4. An inkjet head was manufactured. Table 4 shows the evaluation results of the obtained devices, which were performed in the same manner as in Example B-c-1.

(Comparative Example Bc-9) A device (substrate for an ink jet head) and an ink jet head were prepared in the same manner as in Example B-c-1, except that a Ta target was used as a sputtering target when forming the heating resistor. A head was manufactured. Table 4 shows the evaluation results of the obtained devices, which were performed in the same manner as in Example B-c-1.

[Example corresponding to Embodiment Bd] (Example Bd-1) One Si single crystal substrate (manufactured by Wacker) and a 2.5 μm thick SiO ₂ film formed on the surface Sixty single-crystal Si substrates (manufactured by Wacker Inc.) were set on a substrate holder 602 in the film forming chamber 601 of the high-frequency sputtering apparatus shown in FIG. Co-sputtering was performed under the following conditions using a composite target in which Ir targets 607 and Re targets 620, which are Ir sheets of similar purity, were placed on a Ta target 606, which is a high-purity raw material of 9% by weight or more. About 200
An alloy layer having a thickness of 0 ° was formed.

Co-sputtering conditions Target area ratio Ta: Re: Ir = 25: 36:
39 Target area 5 inch (127 mm) φ High frequency power 1000 W Deposition time 12 minutes Substrate set temperature 50 ° C. Base pressure 2.6 × 10 ⁻⁴ Pa or less Sputter gas pressure 0.4 Pa (argon) Further, on the substrate with SiO ₂ film With respect to the formed film, the target is continuously switched to only Al, and an Al layer serving as the electrodes 104 and 105 (see FIG. 1) is formed on the alloy layer to a thickness of 6000 ° by sputtering according to a conventional method. The sputtering was terminated.

Thereafter, a photoresist is formed twice in a predetermined pattern by a photolithography technique.
1-layer wet etching, the second time dry etching of the heating resistor layer by ion milling, the heating resistor 103 having the shape shown in FIG. 1 (b) and FIG.
04, 105 were formed. The size of the heat generating part is 30μm ×
170 μm, the pitch of the heat generating portions was 125 μm, and 24 heat generating portions were arranged in a line to form one group, and a plurality of such groups were formed on the SiO ₂ film substrate.

Next, an SiO ₂ film is formed thereon by sputtering, and then this SiO ₂ film is covered with electrodes by 10 μm on both sides of the heat generating portion using photolithography and reactive ion etching. To form a protective layer 106. Heat generator 10
The dimensions of 9 are 30 μm × 150 μm.

The product in such a state was cut out for each of the groups to prepare a number of bases for an ink jet head, and a part of them was subjected to an evaluation test described later. Table 5 shows the results of evaluations of the respective devices (bases for ink jet head) obtained in the same manner as in Example A-1.

FIG. 1 (a) and FIG.
In order to form the discharge port 108 and the liquid path 111 shown in FIG. 3B, the glass grooved plate 107 was joined to obtain an ink jet head.

When these ink-jet heads thus obtained were mounted on a printing apparatus having a known configuration and a printing operation was performed, printing was performed with good ejection stability and good signal response, and a high-quality image was obtained. I was able to. Further, the durability in use in this device was also good.

(Examples B-d-2 to B-d-5) Examples B-d-2 to B-d-5 except that the area ratio of each raw material in the sputtering target was variously changed as shown in Table 5 when the heating resistor was formed. A device (substrate for inkjet head) and an inkjet head were produced in the same manner as in d-1. Table 5 shows the evaluation results of the obtained devices, which were performed in the same manner as in Example B-d-1. In addition, each of the inkjet heads manufactured using these devices had good recording characteristics and durability.

(Examples Bd-6 to Bd-10) Ink jet heads manufactured in the same manner as the ink jet head substrates manufactured in Examples Bd-1 to Bd-5, respectively. The above-described FIG.
Using a sputtering apparatus of (1), a SiO ₂ protective layer having a thickness of 1.0 μm was provided by sputtering SiO _2, and a Ta protective layer having a thickness of 0.5 μm was further formed by sputtering Ta on the SiO ₂ protective layer. A substrate for an ink jet head and an ink jet head were produced in the same manner as in each of the examples except for the provision.

An evaluation test was performed on the obtained ink-jet head substrate and the ink-jet head in the same manner as in Example B-d-1. The results of the durability test by the pond test improved little by little with both the low-conductivity ink and the high-conductivity ink. However, M of SST is
Overall smaller.

As described above, by providing the protective layer,
It can be seen that the durability was further improved.

The reason why the M of the SST was reduced was that the foaming threshold voltage (V _th ), which is the denominator of the M, increased because the provision of the protective layer lowered the heat transfer efficiency to the ink. Imagine.

Comparative Examples Bd-1 to Bd-3 Examples B-d-1 to B-d-3 except that the area ratio of each raw material in the sputtering target was variously changed as shown in Table 5 when forming the heating resistors. A device (substrate for inkjet head) and an inkjet head were produced in the same manner as in d-1. Table 5 shows the evaluation results of the obtained devices, which were performed in the same manner as in Example B-d-1.

(Comparative Example Bd-Bd-4) At the time of forming the heating resistor, a sputtering target having a Re sheet provided on a Ta target was used, and the area ratio of each raw material in the sputtering target was changed to the fifth. A device (substrate for an ink jet head) and an ink jet head were produced in the same manner as in Example B-d-1 except for the changes as shown in the table. For each device obtained,
Table 5 shows the results of the evaluation performed in the same manner as in Example B-d-1.

(Comparative Examples Bd-5 to Bd-8) When forming a heating resistor, Ta was used as a sputtering target.
A device (substrate for an ink jet head) and a device were prepared in the same manner as in Example B-d-1 except that an Ir sheet was provided on a target and the area ratio of each raw material in the sputtering target was changed as shown in Table 5. An inkjet head was manufactured. Table 5 shows the evaluation results of the obtained devices, which were performed in the same manner as in Example B-d-1.

(Comparative Example Bd-9) A device (substrate for an ink jet head) and an ink jet head were prepared in the same manner as in Example B-d-1 except that a Ta target was used as a sputtering target when forming a heating resistor. Produced. About each obtained device, Example B-
Table 5 shows the results of the evaluation performed in the same manner as in d-1.

[Example Corresponding to Aspect C] (Example C-1) One Si single crystal substrate (manufactured by Wacker) and one Si single crystal having a 2.5 μm thick SiO ₂ film formed on the surface A crystal substrate (manufactured by Wacker) is set on a substrate holder 602 in a film forming chamber 601 of the above-described high-frequency sputtering apparatus shown in FIG. Co-sputtering was performed under the following conditions by using a composite target in which an Ir target 607 and a Y target 620, which are Ir sheets of similar purity, were placed on an Al target 606, which is a high-purity raw material.
An alloy layer having a thickness of Å was formed.

Co-sputtering conditions Target area ratio Al: Y: Ir = 25: 10: 6
5 Target area 5 inch (127 mm) φ High frequency power 1000 W Substrate set temperature 50 ° C. Deposition time 12 minutes Base pressure 2.6 × 10 ⁻⁴ Pa or less Sputter gas pressure 0.4 Pa (argon) Further, on a substrate with a SiO ₂ film With respect to the formed film, the target is continuously switched to only Al, and an Al layer serving as the electrodes 104 and 105 (see FIG. 1) is formed on the alloy layer to a thickness of 6000 ° by sputtering according to a conventional method. The sputtering was terminated.

Thereafter, a photoresist is formed twice in a predetermined pattern by a photolithography technique.
1-layer wet etching, the second time dry etching of the heating resistor layer by ion milling, the heating resistor 103 having the shape shown in FIG. 1 (b) and FIG.
04, 105 were formed. The size of the heat generating part is 30μm ×
170 μm, the pitch of the heat generating portions was 125 μm, and 24 heat generating portions were arranged in a line to form one group, and a plurality of such groups were formed on the SiO ₂ film substrate.

Next, an SiO ₂ film is formed thereon by sputtering, and then this SiO ₂ film is covered with electrodes by 10 μm on both sides of the heat generating portion by using photolithography and reactive ion etching. To form a protective layer 106. Heat generator 10
The dimensions of 9 are 30 μm × 150 μm.

The product in such a state was cut out for each of the groups to prepare a large number of bases for an ink jet head, and a part of them was subjected to an evaluation test described later. Table 6 shows the results of the evaluations of the obtained devices (substrate for inkjet head) performed in the same manner as in Example A-1.

FIG. 1 (a) and FIG.
In order to form the discharge port 108 and the liquid path 111 shown in FIG. 3B, the glass grooved plate 107 was joined to obtain an ink jet head.

When the obtained ink-jet heads were mounted on a recording apparatus having a known configuration and a recording operation was performed, high-quality images with high ejection stability and good signal responsiveness can be obtained. I was able to. Further, the durability in use in this device was also good.

(Examples C-2 to C-5) Example C-2 except that the area ratio of each raw material in the sputtering target was variously changed as shown in Table 6 when forming the heating resistors.
A device (substrate for ink jet head) and an ink jet head were produced in the same manner as -1. Table 6 shows the evaluation results of the obtained devices, which were performed in the same manner as in Example C-1. In addition, each of the inkjet heads manufactured using these devices had good recording characteristics and durability.

(Examples C-6 to C-10) Example C-1
Sputtering SiO ₂ on the heating resistor layer of the inkjet head substrate manufactured in the same manner as the inkjet head substrate manufactured in each of steps C to C-5 by using the sputtering apparatus of FIG. 6 described above. Thus, a SiO ₂ protective layer having a thickness of 1.0 μm was provided,
Substrates for inkjet heads and inkjet heads were produced in the same manner as in the respective Examples except that a Ta protective layer having a thickness of 0.5 μm was provided by sputtering Ta on the iO ₂ protective layer.

An evaluation test was performed on the obtained ink-jet head substrate and the ink-jet head in the same manner as in Example C-1. As a result, the ink immersion test (a pond test) was performed in comparison with the embodiment without the protective layer. The results of the durability test according to ()) slightly improved both in the case of the low-conductivity ink and in the case of the high-conductivity ink. However, SST's M has become smaller overall.

As described above, by providing the protective layer,
It can be seen that the durability was further improved.

[0243] The reason why the M of the SST was reduced was that the foaming threshold voltage (V _th ), which is the denominator of the M, was increased because the provision of the protective layer reduced the heat transfer efficiency to the ink. Imagine.

(Comparative Examples C-1 to C-4) Example C except that the area ratio of each raw material in the sputtering target was variously changed as shown in Table 6 when forming the heating resistors.
A device (substrate for ink jet head) and an ink jet head were produced in the same manner as -1. Table 6 shows the evaluation results of the obtained devices, which were performed in the same manner as in Example C-1.

(Comparative Examples C-5 to C-10) At the time of forming the heat generating resistor, a sputtering target provided with an Ir sheet on an Al target was used, and the area ratio of each raw material in the sputtering target was as shown in Table 6. A device (substrate for ink jet head) and an ink jet head were produced in the same manner as in Example C-1, except for the above changes. Table 6 shows the evaluation results of the obtained devices, which were performed in the same manner as in Example C-1.

[Example corresponding to Embodiment D] (Example D-1) One Si single crystal substrate (manufactured by Wacker) and one Si single crystal having a 2.5 μm thick SiO ₂ film formed on the surface A crystal substrate (manufactured by Wacker) is set on a substrate holder 602 in a film forming chamber 601 of the above-described high-frequency sputtering apparatus shown in FIG. Co-sputtering was carried out under the following conditions using a composite target in which Ir targets 607 and Ru targets 620, which are Ir sheets of similar purity, were placed on a Cr target 606, which is a high-purity raw material of the above, under the following conditions.
An alloy layer having a thickness of Å was formed.

Co-sputtering conditions Target area ratio Cr: Ru: Ir = 31: 35:
35 Target area 5 inch (127 mm) φ High frequency power 1000 W Deposition time 12 minutes Substrate set temperature 50 ° C. Base pressure 2.6 × 10 ⁻⁴ Pa or less Sputter gas pressure 0.4 Pa (argon) Further, on the substrate with SiO ₂ film With respect to the formed film, the target is continuously switched to only Al, and an Al layer serving as the electrodes 104 and 105 (see FIG. 1) is formed on the alloy layer to a thickness of 6000 ° by sputtering according to a conventional method. The sputtering was terminated.

Thereafter, a photoresist is formed twice in a predetermined pattern by a photolithography technique.
1-layer wet etching, the second time dry etching of the heating resistor layer by ion milling, the heating resistor 103 having the shape shown in FIG. 1 (b) and FIG.
04, 105 were formed. The size of the heat generating part is 30μm ×
170 μm, the pitch of the heat generating portions was 125 μm, and 24 heat generating portions were arranged in a line to form one group, and a plurality of such groups were formed on the SiO ₂ film substrate.

Next, an SiO ₂ film is formed thereon by sputtering, and thereafter, this SiO ₂ film is covered with electrodes by 10 μm on both sides of the heat generating portion using photolithography and reactive ion etching. To form a protective layer 106. Heat generator 10
The dimensions of 9 are 30 μm × 150 μm.

The product in such a state was cut out for each of the groups to prepare a large number of bases for an ink jet head, and a part of them was subjected to an evaluation test described later. Table 7 shows the results of the evaluations of the respective devices (substrate for inkjet head) obtained in the same manner as in Example A-1.

FIG. 1 (a) and FIG.
In order to form the discharge port 108 and the liquid path 111 shown in FIG. 3B, the glass grooved plate 107 was joined to obtain an ink jet head.

When the obtained ink-jet heads were mounted on a recording apparatus having a known configuration, and a recording operation was performed, high-quality images with high ejection stability and good signal response can be obtained. I was able to. Further, the durability in use in this device was also good.

(Examples D-2 to D-5) Example D-2 except that the area ratio of each raw material in the sputtering target was variously changed as shown in Table 7 when forming the heating resistor.
A device (substrate for ink jet head) and an ink jet head were produced in the same manner as -1. Table 7 shows the evaluation results of the obtained devices, which were performed in the same manner as in Example D-1. In addition, the inkjet heads manufactured using these devices all had good recording characteristics and durability.

(Examples D-6 to D-10) Example D-1
Sputtering SiO ₂ on the heating resistor layers of the inkjet head substrate manufactured in the same manner as the inkjet head substrates manufactured in D5 to D-5, respectively, using the sputtering apparatus of FIG. 6 described above. Thus, a SiO ₂ protective layer having a thickness of 1.0 μm was provided,
Substrates for ink jet heads and ink jet heads were produced in the same manner as in the respective Examples except that a Cr protective layer having a thickness of 0.5 μm was provided by sputtering Ta on the iO ₂ protective layer.

An evaluation test was performed on the obtained ink-jet head substrate and the ink-jet head in the same manner as in Example D-1. As a result, the ink immersion test (a pond test) was performed in comparison with the example in which the protective layer was not provided. The results of the durability test according to ()) slightly improved both in the case of the low-conductivity ink and in the case of the high-conductivity ink. However, SST's M has become smaller overall.

As described above, by providing the protective layer,
It can be seen that the durability was further improved.

The reason why the M of the SST was reduced was that the foaming threshold voltage (V _th ), which is the denominator of the M, increased because the provision of the protective layer lowered the heat transfer efficiency to the ink. Imagine.

(Comparative Example D-1) When forming a heating resistor,
R on a Cr target as a sputtering target
A device (substrate for an ink jet head) and an ink jet head were prepared in the same manner as in Example D-1, except that the u sheet was used and the area ratio of each raw material in the sputtering target was changed as shown in Table 7. .

For each of the obtained devices, Example D-
Table 7 shows the results of the evaluation performed in the same manner as in Example 1.

(Comparative Example D-2) When forming a heating resistor,
I on a Cr target as a sputtering target
A device (substrate for an ink jet head) and an ink jet head were produced in the same manner as in Example D-1 except that the area ratio of each raw material in the sputtering target was changed as shown in Table 7 using an r sheet provided. .

For each of the obtained devices, Example D-
Table 7 shows the results of the evaluation performed in the same manner as in Example 1.

(Comparative Example D-3) When forming a heating resistor,
A device (substrate for inkjet head) and an inkjet head were produced in the same manner as in Example D-1, except that a Cr target was used as the sputtering target.

For each of the obtained devices, Example D-
Table 7 shows the results of the evaluation performed in the same manner as in Example 1. [Example corresponding to mode E] (Example E-1) One sheet of S
i single crystal substrate (manufactured by Wacker Inc.) and 2.5 μm thick SiO
_A single-crystal Si substrate (Wacker) having _two films formed on its surface is used as a sputtering substrate 603 for sputtering, a substrate holder in the film forming chamber 601 of the above-described high-frequency sputtering apparatus shown in FIG. Using a composite target in which two Pt targets 607, which are Pt sheets of similar purity, are placed on a Ta target 606, which is a high-purity raw material having a purity of 99.9% by weight or more, and set on a 602, Co-sputtering under the conditions of
An alloy layer having a thickness of 00 ° was formed.

Co-sputtering conditions Target area ratio Ta: Pt = 28: 72 Target area 5 inch (127 mm) φ High frequency power 1000 W Film formation time 12 minutes Substrate set temperature 50 ° C. Base pressure 2.6 × 10 ⁻⁴ Pa or less Sputter gas pressure 0.4 Pa (argon) Further, in the case of a film formed on a substrate with a SiO ₂ film, the target is continuously switched to only Al, and an Al layer serving as electrodes 104 and 105 (see FIG. 1) is formed on the alloy layer. Was formed to a thickness of 6000 ° by sputtering according to a conventional method, and the sputtering was terminated.

Thereafter, a photoresist is formed twice in a predetermined pattern by a photolithography technique.
1-layer wet etching, the second time dry etching of the heating resistor layer by ion milling, the heating resistor 103 having the shape shown in FIG. 1 (b) and FIG.
04, 105 were formed. The size of the heat generating part is 30μm ×
170 μm, the pitch of the heat generating portions was 125 μm, and 24 heat generating portions were arranged in a line to form one group, and a plurality of such groups were formed on the substrate with the SiO ₂ film.

Next, an SiO ₂ film is formed thereon by sputtering, and then this SiO ₂ film is covered with electrodes by 10 μm on both sides of the heat generating portion using photolithography and reactive ion etching. To form a protective layer 106. Heat generator 10
The dimensions of 9 are 30 μm × 150 μm.

The product in such a state was cut out for each of the groups to prepare a large number of bases for an ink jet head, and a part thereof was subjected to an evaluation test described later. Table 8 shows the results of evaluations of the respective devices (bases for inkjet head) obtained in the same manner as in Example A-1.

FIG. 1 (a) and FIG.
In order to form the discharge port 108 and the liquid path 111 shown in FIG. 3B, the glass grooved plate 107 was joined to obtain an ink jet head.

When the obtained ink-jet heads were mounted on a recording apparatus having a known configuration and a recording operation was performed, recording was performed with good ejection stability and good signal response, and high-quality images were obtained. I was able to. Further, the durability in use in this device was also good.

(Examples E-2 to E-3) Example E-2 except that the area ratio of each raw material in the sputtering target was variously changed as shown in Table 8 when forming the heating resistor.
A device (substrate for ink jet head) and an ink jet head were produced in the same manner as -1. Table 8 shows the evaluation results of the obtained devices, which were performed in the same manner as in Example E-1. In addition, each of the inkjet heads manufactured using these devices had good recording characteristics and durability.

(Examples E-4 to E-6) Examples E-1 to E-6
Sputtering SiO ₂ on the heating resistor layer of the inkjet head substrate manufactured in the same manner as the inkjet head substrate manufactured in E-3, respectively, using the sputtering apparatus of FIG. 6 described above. To provide a 1.0 μm thick SiO ₂ protective layer,
Substrates for inkjet heads and inkjet heads were produced in the same manner as in the respective Examples except that a Ta protective layer having a thickness of 0.5 μm was provided by sputtering Ta on the O ₂ protective layer.

An evaluation test was performed on the obtained ink-jet head substrate and the ink-jet head in the same manner as in Example E-1. As a result, an ink immersion test (a pond test) was performed as compared with the example in which the protective layer was not provided. The results of the durability test according to ()) slightly improved both in the case of the low-conductivity ink and in the case of the high-conductivity ink. Further, the change in resistance was smaller than that of the example without the protective layer. However, SST's M has become smaller overall.

As described above, by providing the protective layer,
It can be seen that the durability and the resistance change mainly due to the electrochemical reaction are further improved.

The reason why the M of the SST was reduced was that the foaming threshold voltage (V _th ), which is the denominator of the M, was increased because the provision of the protective layer lowered the heat transfer efficiency to the ink. Imagine.

(Comparative Examples E-1 to E-3) Example E except that the area ratio of each raw material in the sputtering target was variously changed as shown in Table 8 when forming the heating resistors.
A device (substrate for ink jet head) and an ink jet head were produced in the same manner as -1.

With respect to each of the obtained devices, Example E-
Table 8 shows the results of the evaluation performed in the same manner as in Example 1.

(Comparative Example E-4) When forming a heating resistor,
A device (substrate for an inkjet head) and an inkjet head were produced in the same manner as in Example E-1, except that a Pt target was used as a sputtering target.

For each of the obtained devices, Example E-
Table 8 shows the results of the evaluation performed in the same manner as in Example 1.

(Comparative Example E-5) When forming a heating resistor,
A device (substrate for inkjet head) and an inkjet head were produced in the same manner as in Example E-1, except that a Ta target was used as a sputtering target.

For each of the obtained devices, Example E-
Table 8 shows the results of the evaluation performed in the same manner as in Example 1.

In the same manner as in the various embodiments corresponding to the above-described modes A to E, a substrate for an ink-jet head and an ink-jet head having a heating resistor constituted by the materials proposed in Documents 1 and 2 are manufactured. did.

An evaluation test was carried out on the obtained ink-jet head substrate and the ink-jet head in the same manner as in Example A-1. The results of the durability test by the test (pond test) were inferior to both the low conductivity ink and the high conductivity ink. Also, SST M
Was also inferior. That is, the example of the present invention was superior to the supplemental comparative example in overall durability by about 1.2 times.

As described above, when driving is performed with a drive pulse having a relatively long width (20 μs in the above Examples and Comparative Examples), the heating resistor is constituted by the materials proposed in Documents 1 and 2. It can be seen that the examples of the present invention are particularly superior in terms of durability, as compared to the ink jet head substrate and the ink jet head.
Note that the present invention can be applied to a recording head and a recording apparatus of a method of ejecting ink using an electromechanical transducer such as a piezo element if the ink jet recording method is used. The present invention is applied to a recording head and a recording apparatus of a type in which ink is ejected by using an ink jet head and provides excellent effects. According to such a method, it is possible to achieve higher density and higher definition of recording.

The typical configuration and principle are described in, for example, US Pat. Nos. 4,723,129 and 4,740.
It is preferable to use the basic principle disclosed in the specification of Japanese Patent No. 796. This method can be applied to both the so-called on-demand type and the continuous type. In particular, in the case of the on-demand type, liquid (ink)
By applying at least one drive signal corresponding to the recorded information and providing a rapid temperature rise exceeding nucleate boiling, to the electrothermal transducer arranged corresponding to the sheet or liquid path in which is held, This is effective because heat energy is generated in the electrothermal transducer, and the film is boiled on the heat-acting surface of the recording head. As a result, bubbles in the liquid (ink) can be formed in one-to-one correspondence with the drive signal. By discharging the liquid (ink) through the discharge opening by the growth and contraction of the bubble, at least one droplet is formed. When the drive signal is formed into a pulse shape, the growth and shrinkage of the bubble are performed immediately and appropriately, so that the ejection of liquid (ink) having particularly excellent responsiveness can be achieved, which is more preferable. Examples of the drive signal in the form of a pulse include those described in U.S. Pat.
Suitable are those described in US Pat. No. 45,262. If the conditions described in U.S. Pat. No. 4,313,124 relating to the temperature rise rate of the heat acting surface are adopted, more excellent recording can be performed.

As the configuration of the recording head, in addition to the combination of a discharge port, a liquid path, and an electrothermal converter (a linear liquid flow path or a right-angled liquid flow path) as disclosed in the above-mentioned respective specifications, U.S. Pat. No. 4,558,333 and U.S. Pat. No. 4,558,333 which disclose a configuration in which a heat acting portion is arranged in a bending region.
A configuration using the specification of Japanese Patent No. 459600 is also included in the present invention. In addition, Japanese Unexamined Patent Publication (Kokai) No. 123670/1984 discloses a configuration in which a common slit is used as a discharge portion of an electrothermal converter for a plurality of electrothermal converters, and an aperture for absorbing pressure waves of thermal energy. The present invention is also effective as a configuration based on JP-A-59-138461 which discloses a configuration corresponding to a discharge unit.

Further, as a full-line type recording head having a length corresponding to the width of the maximum recording medium that can be recorded by the recording apparatus, a combination of a plurality of recording heads as disclosed in the above specification is used. Either a configuration that satisfies the length or a configuration as one integrally formed recording head may be used, but the present invention can more effectively exert the above-described effects.

[0287] In addition, an exchangeable chip-type recording head that can be electrically connected to the apparatus main body and supplied with ink from the apparatus main body by being attached to the apparatus main body, or integrated with the recording head itself. The present invention is also effective when a cartridge-type recording head provided in a fixed manner is used.

It is preferable to add recovery means for the printhead, preliminary auxiliary means, and the like provided as components of the printing apparatus of the present invention since the effects of the present invention can be further stabilized. To be more specific, a capping unit, a cleaning unit, a pressure or suction unit, a preheating unit using an electrothermal converter, another heating element, or a combination thereof, for the recording head. ,
Performing a preliminary ejection mode in which ejection is performed separately from printing is also effective for performing stable printing.

Further, the recording mode of the recording apparatus is not limited to the recording mode of only the mainstream color such as black, and the recording head may be integrally formed or a combination of a plurality of recording heads. The present invention is also very effective for an apparatus provided with at least one of full colors by color mixture.

In the embodiments of the present invention described above, the description is made using the liquid ink. However, in the present invention, even if the ink is solid at room temperature, the ink is in a state of softening at room temperature. Can also be used. In the above-described ink-jet apparatus, the temperature of the ink itself is 30 ° C.
In general, the viscosity of the ink is controlled so as to be in a stable ejection range by adjusting the temperature within a range of not more than ° C.
Therefore, in such an ink jet apparatus, it is sufficient to use ink that is liquid when the apparatus to which the recording signal is applied is used. In addition, the thermal energy is positively used as the energy of the state change from the solid state to the liquid state of the ink to prevent the temperature rise of the head due to the thermal energy, or by solidifying the ink in a standing state. In order to prevent evaporation of the ink, the ink is liquefied and ejected in a liquid state by applying thermal energy in accordance with the recording signal, or the ink is already solidified when it reaches the recording medium. Inks having the property of being liquefied for the first time by energy can also be used in the present invention.
Such an ink is held as a liquid or a solid in a concave portion or a through hole of a porous sheet as described in JP-A-54-56847 or JP-A-60-71260. You may arrange | position as a form facing an electrothermal converter. In the present invention, the most effective ejection method for each of the above-described inks is the above-described film boiling method.

As described above, according to the present invention, the heating resistor is made of a non-single-crystal substance containing Ir and one specific element or Ir and two specific elements in a specific composition ratio. , Cavitation impact resistance,
Improved inkjet head with superior resistance to erosion due to cavitation, mechanical durability, chemical stability, electrochemical stability, resistance stability, heat resistance, oxidation resistance, dissolution resistance and thermal shock resistance Can be obtained.

Further, according to the present invention, even in the case of repeated use for a long time, the thermal energy is efficiently transmitted to the recording liquid (ink) efficiently in response to the on-demand signal at all times to discharge the ink. And an improved ink jet head that provides excellent recorded images can be obtained.

Further, according to the present invention, the heat generating resistor has a structure excellent in heat conductivity by directly contacting the recording liquid, the power consumption by the heat generating resistor is kept low, and the temperature change of the ink jet head is suppressed. Is extremely small, and the ink is constantly and stably ejected even when used repeatedly for a long time, so that an improved inkjet head can be obtained in which the obtained image does not have a density change due to a temperature change of the inkjet head. .

In addition, according to the present invention, a drive pulse having a comparatively long width can be used while taking advantage of Ir, which is particularly advantageous in terms of heat resistance, oxidation resistance, and chemical stability. An ink jet head having a heating resistor made of a material exhibiting sufficient durability can be obtained even when driving.

Further, according to the present invention, it is possible to obtain an improved ink jet head base for constituting the above-described ink jet head, and an improved ink jet apparatus having the above-described ink jet head.

[0296]

[Table 1]

[0297]

[Table 2]

[0298]

[Table 3]

[0299]

[Table 4]

[0300]

[Table 5]

[0301]

[Table 6]

[0302]

[Table 7]

[0303]

[Table 8]

[Brief description of the drawings]

FIG. 1A is a schematic front view of an example of an ink jet head of the present invention as viewed from a discharge port side, and FIG.
It is XY sectional drawing in (a).

FIG. 2A is a schematic plan view of a base for an inkjet head at a stage where a heating resistor layer and an electrode are provided, and FIG. 2B is a diagram in which a protective layer is provided on those layers. FIG. 3 is a schematic plan view of a substrate for an inkjet head at a stage where it has been completed.

FIG. 3 is a cross-sectional view illustrating a configuration of a main part of another example of the inkjet head of the present invention.

FIG. 4A is a schematic top view of another example of the inkjet head of the present invention, and FIG. 4B is a diagram illustrating A- in FIG.
It is B sectional drawing.

FIG. 5 is an external perspective view showing an example of an ink jet device according to the present invention.

FIG. 6 is a schematic cross-sectional view showing an example of a high-frequency sputtering device used for producing a film such as a heating resistor according to the present invention.

FIG. 7 is a diagram showing a composition range of a material constituting a heating resistor according to the present invention.

FIG. 8 is a diagram showing a composition range of a material constituting a heating resistor according to the present invention.

FIG. 9 is a view showing a composition range of a material constituting a heating resistor according to the present invention.

FIG. 10 is a diagram showing a composition range of a material constituting a heating resistor according to the present invention.

FIG. 11 is a diagram showing a composition range of a material constituting a heating resistor according to the present invention.

FIG. 12 is a view showing a composition range of a material constituting a heating resistor according to the present invention.

FIG. 13 is a view showing a composition range of a material constituting a heating resistor according to the present invention.

FIG. 14 is a diagram showing a composition range of a material constituting a heating resistor according to the present invention.

[Explanation of symbols]

 101, 301, 603 Substrate 102, 302 Lower layer 103, 303 Heating resistor layer 104, 105, 304, 305 Electrode 106 Protective layer 107 Grooved plate 108 Discharge port 109, 309 Heating surface 410 Discharge port plate 412 Support member 601 Deposition chamber 602 Substrate holder 603 Substrate 604 Shutter plate 605 Target holder 606 Ti target 607 Ir target 608 Rotating shaft 609 Insulator 610 Exhaust pipe 611 Exhaust pump 612 Gas supply pipe 613 Flow control valve 614 Matching box 615 RF power supply 616, 617 Conducting wire 618 Protective wall 619 Vacuum gauge 620 Ta target 5000 Platen 5002 Paper press plate 5004 Screw groove 5005 Lead screw 5006 Lever 5007, 5008 Photo Plastic 5009,5011 driving force transmission gears 5013 drive motor 5015 sucking means 5016 home position detection means 5017 a cleaning blade 5018 main body support plate 5019 member 5020 cam 5022 cap member 5023 capping the opening

──────────────────────────────────────────────────続 き Continuation of the front page (31) Priority claim number Japanese Patent Application No. 3-194032 (32) Priority date August 2, 1991 (1991.8.2) (33) Priority claim country Japan (JP) (31) Priority claim number Japanese Patent Application No. 3-194034 (32) Priority date August 2, 1991 (1991.8.2) (33) Priority claim country Japan (JP) (31) Priority claim number Japanese Patent Application No. 3-194035 (32) Priority date August 2, 1991 (8.2 August 1991) (33) Priority claiming country Japan (JP) (31) Priority claim number Japanese Patent Application No. 3-194036 ( 32) Priority date August 2, 1991 (8.2 August, 1991) (33) Priority country Japan (JP) (31) Priority claim number Japanese Patent Application No. 3-194037 (32) Priority date 1991 August 2, 1991.8.2 (33) Country of priority claim Japan (JP) (72) Inventor Isao Kimura 3-30-2 Shimomaruko, Ota-ku, Tokyo Inside Canon Inc. (5 8) Surveyed field (Int.Cl. ⁷ , DB name) H01L 49/00 B41J 2/05

Claims (272)

(57) [Claims] 1. An ink-jet head having an electrothermal converter having a heat generating resistor which is generated by energizing the thermal energy used for ejecting the ink by directly applying thermal energy to the ink on the heat acting surface. The substrate for an ink jet head, wherein the heating resistor is made of a material containing at least Ir and Cr in the following composition ratio. 24 atomic% ≦ Ir ≦ 68 atomic% 32 atomic% ≦ Cr ≦ 76 atomic% 2. The substrate for an ink jet head according to claim 1, wherein a constituent material of said heat generating resistor is a non-single crystalline substance. 3. The substrate for an ink jet head according to claim 2, wherein the non-single-crystalline substance is a polycrystalline substance. 4. The material according to claim 1, wherein the material constituting the heating resistor contains at least one selected from the group consisting of Ar, O, C, N, Si, B, Na, Cl and Fe as impurities. The substrate for an inkjet head according to the above. 5. The substrate for an ink jet head according to claim 1, wherein the electrothermal transducer has a pair of electrodes on the heating resistor for contacting the heating resistor and conducting the current. 6. The substrate for an ink jet head according to claim 1, wherein the electrothermal transducer has a pair of electrodes under the heating resistor for contacting the heating resistor and conducting the current. 7. The substrate for an ink jet head according to claim 1, wherein said heat acting surface is formed by said heat generating resistor. 8. The substrate for an ink jet head according to claim 1, wherein said heat acting surface is formed by a protective layer on said heat generating resistor. 9. The ink jet head according to claim 8, wherein the protective layer has a Ta layer forming the heat acting surface, and a Si-containing insulating layer interposed between the Ta layer and the heating resistor. Substrate. 10. The heating resistor has a thickness of 300 °.
The substrate for an inkjet head according to claim 1, which has a thickness of from 1 to 1 m. 11. The layer of the heating resistor has a thickness of 1000.
The substrate for an ink-jet head according to claim 10, wherein the thickness is {5000}. 12. An electrothermal converter having a heat-generating resistor, which is generated by energizing the thermal energy used for ejecting the ink by directly applying thermal energy to the ink on the thermal working surface, is provided in the ink passage. An ink-jet head according to claim 1, wherein the heating resistor is made of a material containing at least Ir and Cr in the following composition ratios. 24 atomic% ≦ Ir ≦ 68 atomic% 32 atomic% ≦ Cr ≦ 76 atomic% 13. The ink jet head according to claim 12, wherein a constituent material of the heating resistor is a non-single crystalline substance. 14. The ink jet head according to claim 13, wherein the non-single-crystal material is a polycrystalline material. 15. The material according to claim 12, wherein the material forming the heating resistor contains at least one selected from the group consisting of Ar, O, C, N, Si, B, Na, Cl and Fe as impurities. The inkjet head according to the above. 16. The ink-jet head according to claim 12, wherein the electrothermal transducer has a pair of electrodes on the heating resistor for contacting the heating resistor and conducting the current. 17. The ink jet head according to claim 12, wherein the electrothermal transducer has a pair of electrodes under the heating resistor for contacting the heating resistor and conducting the current. 18. The ink jet head according to claim 12, wherein said heat acting surface is formed by said heat generating resistor. 19. The ink jet head according to claim 12, wherein the heat acting surface is formed by a protective layer on the heating resistor. 20. The ink jet head according to claim 19, wherein the protective layer has a Ta layer forming the heat acting surface, and a Si-containing insulating layer interposed between the Ta layer and the heating resistor. . 21. A layer thickness of the heating resistor is 300 °.
The inkjet head according to claim 12, wherein the thickness is from 1 to 1 m. 22. A layer thickness of said heating resistor is 1000
The inkjet head according to claim 12, wherein the angle is in the range of {5000}. 23. The direction in which ink is ejected and the direction in which ink is supplied to the heat acting surface are substantially the same.
3. The inkjet head according to 2. 24. The ink jet head according to claim 12, wherein a direction in which the ink is ejected and a direction in which the ink is supplied to the heat acting surface are substantially perpendicular to each other. 25. The ink jet head according to claim 12, wherein a plurality of ejection ports for ejecting ink are provided corresponding to the width of the recording area of the recording member. 26. The ink jet head according to claim 25, wherein the number of the ejection ports is 1,000 or more. 27. The ink jet head according to claim 26, wherein a plurality of the discharge ports are provided in a number of 2000 or more. 28. The ink jet head according to claim 12, wherein a functional element relating to ink ejection is structurally provided inside the surface of the ink jet head base. 29. The ink jet head according to claim 12, wherein the ink jet head is of a cartridge type integrally including an ink tank for storing ink supplied to the heat acting surface. 30. An electrothermal converter having a heat generating resistor which is generated by energizing the thermal energy used for ejecting the ink by directly applying thermal energy to the ink on the thermal working surface; An ink-jet device comprising: means for applying a signal to a converter; wherein the heat-generating resistor is made of a material containing at least Ir and Cr in the following composition ratio. 24 atomic% ≦ Ir ≦ 68 atomic% 32 atomic% ≦ Cr ≦ 76 atomic% 31. The ink jet apparatus according to claim 30, which performs color recording. 32. A control circuit of an ink jet device, wherein the means for giving a signal to the electrothermal transducer is a control circuit of an ink jet device.
An inkjet device according to item 1. 33. The ink jet apparatus according to claim 30, further comprising a carriage on which a head having the electrothermal transducer is mounted. 34. An ink jet head having an electrothermal converter provided with a heating resistor which is generated by energizing the thermal energy used for ejecting the ink by directly applying thermal energy to the ink on the thermal working surface. A substrate for an ink jet head, wherein the heating resistor is made of a material containing at least Ir, Ta and Ti in the following composition ratio. 46 atomic% ≦ Ir ≦ 78 atomic% 5 atomic% ≦ Ta ≦ 43 atomic% 10 atomic% ≦ Ti ≦ 38 atomic% 35. The substrate for an ink jet head according to claim 34, wherein a constituent material of the heating resistor is a non-single crystalline substance. 36. The substrate for an ink-jet head according to claim 35, wherein the non-single crystalline material is a polycrystalline material. 37. The substrate for an ink jet head according to claim 35, wherein the non-single crystalline material is an amorphous material. 38. The material according to claim 34, wherein the material forming the heating resistor contains at least one selected from the group consisting of Ar, O, C, N, Si, B, Na, Cl and Fe as impurities. The substrate for an inkjet head according to the above. 39. The substrate for an ink jet head according to claim 34, wherein the electrothermal transducer has a pair of electrodes on the heating resistor for contacting the heating resistor and conducting the current. 40. The substrate for an ink jet head according to claim 34, wherein the electrothermal transducer has a pair of electrodes below the heating resistor for contacting the heating resistor and conducting the current. 41. The substrate for an ink jet head according to claim 34, wherein said heat acting surface is formed by said heat generating resistor. 42. The substrate for an ink jet head according to claim 34, wherein said heat acting surface is formed by a protective layer on said heat generating resistor. 43. The protection layer, wherein the Ta layer forming the heat acting surface and the S layer interposed between the Ta layer and the heating resistor.
43. The substrate for an ink jet head according to claim 42, comprising an i-containing insulating layer. 44. A layer thickness of the heating resistor is 300 °
35. The substrate for an inkjet head according to claim 34, which has a thickness of from 1 to 1 m. 45. A layer thickness of said heating resistor is 1000
The substrate for an ink-jet head according to claim 44, wherein the angle is from {5000}. 46. An electrothermal converter provided with a heating resistor for generating a thermal energy by applying the thermal energy used for ejecting the ink by directly applying the thermal energy to the ink on the heat acting surface, to the ink passage. An ink jet head comprising: a heat generating resistor formed of a material containing at least Ir, Ta and Ti in the following composition ratios: 46 atomic% ≦ Ir ≦ 78 atomic% 5 atomic% ≦ Ta ≦ 43 atomic% 10 atomic% ≦ Ti ≦ 38 atomic% 47. The ink jet head according to claim 46, wherein a constituent material of the heating resistor is a non-single crystalline substance. 48. The ink jet head according to claim 47, wherein the non-single crystalline material is a polycrystalline material. 49. The ink jet head according to claim 47, wherein the non-single-crystal material is an amorphous material. 50. The material according to claim 46, wherein the material constituting said heat generating resistor contains at least one selected from the group consisting of Ar, O, C, N, Si, B, Na, Cl and Fe as impurities. The inkjet head according to the above. 51. The ink-jet head according to claim 46, wherein the electrothermal transducer has a pair of electrodes on the heating resistor for contacting the heating resistor and conducting the current. 52. The ink-jet head according to claim 46, wherein the electrothermal transducer has a pair of electrodes below the heating resistor for contacting the heating resistor and conducting the current. 53. The ink jet head according to claim 46, wherein said heat acting surface is formed by said heat generating resistor. 54. The ink jet head according to claim 46, wherein the heat acting surface is formed by a protective layer on the heating resistor. 55. The ink jet head according to claim 54, wherein the protective layer has a Ta layer forming the heat acting surface, and a Si-containing insulating layer interposed between the Ta layer and the heating resistor. . 56. A layer thickness of the heating resistor is 300 °
The ink jet head according to claim 46, wherein the thickness is from 1 to 1 µm. 57. A layer thickness of the heating resistor is 1000
The inkjet head according to claim 56, wherein the angle is in the range of {5000}. 58. The direction in which ink is ejected and the direction in which ink is supplied to the heat acting surface are substantially the same.
7. The inkjet head according to 6. 59. The ink jet head according to claim 46, wherein a direction in which the ink is ejected and a direction in which the ink is supplied to the heat acting surface are substantially perpendicular to each other. 60. The ink jet head according to claim 46, wherein a plurality of discharge ports for discharging ink are provided corresponding to the width of the recording area of the recording member. 61. The ink jet head according to claim 60, wherein a plurality of the ejection ports are provided in a number of 1000 or more. 62. The ink jet head according to claim 61, wherein the number of the discharge ports is 2000 or more. 63. The ink jet head according to claim 46, wherein the functional element relating to ink ejection is structurally provided inside the surface of the ink jet head base. 64. The ink jet head according to claim 46, wherein the ink jet head is of a cartridge type integrally including an ink tank for storing ink supplied to the heat acting surface. 65. An electrothermal converter provided with a heating resistor for generating heat by applying current to the ink on the heat-acting surface by applying heat energy directly to the ink and discharging the ink. An ink jet apparatus comprising: means for applying a signal to a converter; wherein the heating resistor is made of a material containing at least Ir, Ta, and Ti in the following composition ratios. 46 atomic% ≦ Ir ≦ 78 atomic% 5 atomic% ≦ Ta ≦ 43 atomic% 10 atomic% ≦ Ti ≦ 38 atomic% 66. The ink jet apparatus according to claim 65, which performs color recording. 67. A control circuit of an ink jet device, wherein the means for giving a signal to the electrothermal transducer is a control circuit of an ink jet device.
An inkjet device according to item 1. 68. The ink jet apparatus according to claim 65, further comprising a carriage on which a head having the electrothermal transducer is mounted. 69. An ink jet head having an electrothermal converter provided with a heat generating resistor which is generated by energizing the thermal energy used for ejecting the ink by directly applying thermal energy to the ink on the thermal working surface. A base for an ink jet head, wherein the heating resistor is made of a material containing at least Ir, Ru and Ta in the following composition ratio. 10 atomic% ≦ Ir ≦ 67 atomic% 11 atomic% ≦ Ru ≦ 58 atomic% 18 atomic% ≦ Ta ≦ 63 atomic% 70. The substrate for an ink jet head according to claim 69, wherein a constituent material of said heat generating resistor is a non-single crystalline substance. 71. The substrate for an ink-jet head according to claim 70, wherein the non-single-crystalline substance is a polycrystalline substance. 72. The substrate for an ink jet head according to claim 70, wherein the non-single crystalline material is an amorphous material. 73. The material according to claim 69, wherein the material constituting the heating resistor contains at least one selected from the group consisting of Ar, O, C, N, Si, B, Na, Cl and Fe as impurities. The substrate for an inkjet head according to the above. 74. The base for an ink jet head according to claim 69, wherein the electrothermal transducer has a pair of electrodes on the heating resistor for contacting with the heating resistor and conducting the current. 75. The base for an ink jet head according to claim 69, wherein the electrothermal transducer has a pair of electrodes below the heating resistor for contacting the heating resistor and conducting the current. 76. The substrate for an ink jet head according to claim 69, wherein said heat acting surface is formed by said heat generating resistor. 77. The substrate for an ink jet head according to claim 69, wherein said heat acting surface is formed by a protective layer on said heat generating resistor. 78. The ink jet head according to claim 69, wherein the protective layer has a Ta layer forming the heat acting surface, and a Si-containing insulating layer interposed between the Ta layer and the heating resistor. Substrate. 79. The thickness of the heating resistor layer is 300 °
70. The substrate for an ink jet head according to claim 69, which has a thickness of from 1 to 1 m. 80. A layer thickness of said heating resistor is 1000
80. The substrate for an ink jet head according to claim 79, which has a thickness of {5000}. 81. An electrothermal converter provided with a heating resistor for generating heat by applying current to the ink on the heat-acting surface by directly applying heat energy to the ink and discharging the ink to the ink passage. An ink-jet head according to claim 1, wherein the heating resistor is made of a material containing at least Ir, Ru, and Ta in the following composition ratio. 10 atomic% ≦ Ir ≦ 67 atomic% 11 atomic% ≦ Ru ≦ 58 atomic% 18 atomic% ≦ Ta ≦ 63 atomic% 82. The ink jet head according to claim 81, wherein a constituent material of said heating resistor is a non-single crystalline substance. 83. The ink-jet head according to claim 82, wherein the non-single crystalline material is a polycrystalline material. 84. The ink jet head according to claim 82, wherein said non-single crystalline material is an amorphous material. 85. The material according to claim 81, wherein the material constituting said heat generating resistor contains at least one selected from the group consisting of Ar, O, C, N, Si, B, Na, Cl and Fe as impurities. The inkjet head according to the above. 86. The ink jet head according to claim 81, wherein the electrothermal transducer has a pair of electrodes on the heating resistor for contacting the heating resistor and performing the energization. 87. The ink jet head according to claim 81, wherein the electrothermal transducer has a pair of electrodes under the heating resistor for contacting the heating resistor and performing the current supply. 88. The ink jet head according to claim 81, wherein said heat acting surface is formed by said heat generating resistor. 89. The ink jet head according to claim 81, wherein the heat acting surface is formed by a protective layer on the heating resistor. 90. The ink jet head according to claim 89, wherein the protective layer has a Ta layer forming the heat acting surface, and a Si-containing insulating layer interposed between the Ta layer and the heating resistor. . 91. The thickness of the heating resistor layer is 300 °
The inkjet head according to claim 81, wherein the thickness is from 1 to 1 µm. 92. The layer thickness of the heating resistor is 1000
The inkjet head according to claim 91, wherein the angle is {5000}. 93. The direction in which ink is ejected and the direction in which ink is supplied to the heat acting surface are substantially the same.
2. The inkjet head according to 1. 94. The ink jet head according to claim 81, wherein a direction in which the ink is ejected and a direction in which the ink is supplied to the heat acting surface are substantially perpendicular to each other. 95. The ink jet head according to claim 81, wherein a plurality of discharge ports for discharging ink are provided corresponding to the width of the recording area of the recording member. 96. The ink jet head according to claim 95, wherein a plurality of the ejection ports are provided in a number of 1000 or more. 97. The ink jet head according to claim 96, wherein the number of the discharge ports is 2000 or more. 98. The ink jet head according to claim 81, wherein the functional element relating to ink ejection is structurally provided inside the surface of the ink jet head base. 99. The ink jet head according to claim 81, wherein the ink jet head is of a cartridge type integrally including an ink tank for storing ink supplied to the heat acting surface. 100. An electrothermal converter having a heating resistor for generating heat by applying current to the ink on the heat-acting surface by directly applying heat energy to the ink and discharging the ink. An ink jet apparatus comprising: a means for applying a signal to a converter; wherein the heating resistor is made of a material containing at least Ir, Ru, and Ta in the following composition ratio. 10 atomic% ≦ Ir ≦ 67 atomic% 11 atomic% ≦ Ru ≦ 58 atomic% 18 atomic% ≦ Ta ≦ 63 atomic% 101. The ink jet apparatus according to claim 100, which performs color recording. The means for applying a signal to the electrothermal transducer is a control circuit of an ink jet apparatus.
The inkjet device according to 00. 103. The ink jet apparatus according to claim 100, further comprising a carriage on which a head having the electrothermal transducer is mounted. 104. An ink jet head having an electrothermal converter provided with a heat generating resistor for generating heat by energizing the heat energy used for ejecting the ink by directly applying heat energy to the ink on the heat acting surface. A base for an ink jet head, wherein the heating resistor is made of a material containing at least Ir, Os and Ta in the following composition ratio. 17 atomic% ≦ Ir ≦ 73 atomic% 5 atomic% ≦ Os ≦ 58 atomic% 19 atomic% ≦ Ta ≦ 60 atomic% 105. The substrate for an ink jet head according to claim 104, wherein a constituent material of said heat generating resistor is a non-single crystalline substance. 106. The substrate for an ink jet head according to claim 105, wherein said non-single-crystalline substance is a polycrystalline substance. 107. The substrate for an ink jet head according to claim 105, wherein said non-single crystalline material is an amorphous material. 108. A material forming the heating resistor,
Ar, O, C, N, Si, B, Na, Cl as impurities
105. The substrate for an ink jet head according to claim 104, comprising at least one selected from the group consisting of and Fe. 109. The substrate for an ink jet head according to claim 104, wherein said electrothermal transducer has a pair of electrodes on said heating resistor for contacting said heating resistor and conducting said current. 110. The substrate for an ink jet head according to claim 104, wherein said electrothermal transducer has a pair of electrodes under said heating resistor for contacting said heating resistor and conducting said current. 111. The substrate for an ink jet head according to claim 104, wherein said heat acting surface is formed by said heat generating resistor. 112. The substrate for an ink jet head according to claim 104, wherein said heat acting surface is formed by a protective layer on said heat generating resistor. 113. The ink jet head according to claim 104, wherein said protective layer has a Ta layer forming said heat acting surface, and a Si-containing insulating layer interposed between said Ta layer and said heat generating resistor. Substrate. 114. A layer thickness of the heating resistor is 300
105. The substrate for an ink jet head according to claim 104, wherein the thickness is Å to 1 μm. 115. The thickness of the layer of the heating resistor is 100
105. The substrate for an ink jet head according to claim 104, wherein the angle is 0 ° to 5000 °. 116. An electrothermal converter provided with a heating resistor for generating a thermal energy by applying a thermal energy to the ink on the thermal working surface by directly applying the thermal energy to the ink and supplying the thermal energy to the ink passage. An ink-jet head comprising: a heating resistor formed of a material containing at least Ir, Os, and Ta in the following composition ratio. 17 atomic% ≦ Ir ≦ 73 atomic% 5 atomic% ≦ Os ≦ 58 atomic% 19 atomic% ≦ Ta ≦ 60 atomic% 117. The ink jet head according to claim 116, wherein a constituent material of said heat generating resistor is a non-single crystalline substance. 118. The ink jet head according to claim 117, wherein said non-single crystalline material is a polycrystalline material. 119. The ink jet head according to claim 117, wherein said non-single crystalline material is an amorphous material. 120. A material forming the heating resistor,
Ar, O, C, N, Si, B, Na, Cl as impurities
117. The ink jet head according to claim 116, comprising at least one selected from the group consisting of Fe and Fe. 121. The ink-jet head according to claim 116, wherein said electrothermal transducer has a pair of electrodes on said heating resistor for contacting said heating resistor to conduct electricity. 122. The ink-jet head according to claim 116, wherein said electrothermal transducer has a pair of electrodes under said heating resistor for contacting said heating resistor and conducting said current. 123. The ink jet head according to claim 116, wherein said heat acting surface is formed by said heat generating resistor. 124. The ink jet head according to claim 116, wherein said heat acting surface is formed by a protective layer on said heat generating resistor. 125. The ink jet head according to claim 124, wherein said protective layer has a Ta layer forming said heat acting surface, and a Si-containing insulating layer interposed between said Ta layer and said heating resistor. . 126. The thickness of the layer of the heating resistor is 300
The ink-jet head according to claim 116, wherein the thickness is from Å to 1 µm. 127. A layer thickness of the heating resistor is 100
117. The inkjet head according to claim 116, wherein the angle is from 0 to 5000. 128. The ink jet head according to claim 116, wherein a direction in which the ink is ejected and a direction in which the ink is supplied to the heat acting surface are substantially the same. 129. The ink jet head according to claim 116, wherein a direction in which the ink is ejected and a direction in which the ink is supplied to the heat acting surface are substantially perpendicular to each other. 130. The ink jet head according to claim 116, wherein a plurality of discharge ports for discharging ink are provided corresponding to the width of the recording area of the recording member. 131. The ink-jet head according to claim 130, wherein the number of the ejection ports is 1,000 or more. 132. The ink jet head according to claim 131, wherein the number of the discharge ports is 2000 or more. 133. The ink jet head according to claim 116, wherein the functional element relating to ink ejection is structurally provided inside the surface of the ink jet head base. 134. The ink jet head according to claim 116, wherein the ink jet head is of a cartridge type integrally including an ink tank for storing ink supplied to the heat acting surface. 135. An electrothermal converter having a heating resistor for generating heat by applying current to the ink on the heat-acting surface by directly applying heat energy to eject the ink, and An ink jet device comprising: means for applying a signal to a converter; wherein the heating resistor is made of a material containing at least Ir, Os, and Ta in the following composition ratio. 17 atomic% ≦ Ir ≦ 73 atomic% 5 atomic% ≦ Os ≦ 58 atomic% 19 atomic% ≦ Ta ≦ 60 atomic% 136. The ink jet apparatus according to claim 135, which performs color recording. 137. The means for giving a signal to the electrothermal transducer is a control circuit of an ink jet device.
36. The inkjet device according to 35. 138. The ink jet apparatus according to claim 135, further comprising a carriage on which a head having the electrothermal transducer is mounted. 139. An ink jet head having an electrothermal converter provided with a heat generating resistor which is generated by energizing the thermal energy used for ejecting the ink by directly applying thermal energy to the ink on the heat acting surface. A substrate for an ink jet head, wherein the heating resistor is made of a material containing at least Ir, Re and Ta in the following composition ratios. 39 atomic% ≦ Ir ≦ 58 atomic% 9 atomic% ≦ Re ≦ 36 atomic% 22 atomic% ≦ Ta ≦ 51 atomic% 140. The substrate for an ink jet head according to claim 139, wherein the constituent material of said heat generating resistor is a non-single crystalline substance. 141. The substrate for an ink jet head according to claim 140, wherein said non-single crystalline material is a polycrystalline material. 142. A material forming the heating resistor,
Ar, O, C, N, Si, B, Na, Cl as impurities
139. The substrate for an ink jet head according to claim 139, comprising at least one selected from the group consisting of and Fe. 143. The substrate for an ink-jet head according to claim 139, wherein said electrothermal transducer has a pair of electrodes on said heating resistor for contacting said heating resistor and conducting said current. 144. The base for an ink jet head according to claim 139, wherein said electrothermal transducer has a pair of electrodes below said heating resistor for contacting said heating resistor and conducting said current. 145. An ink jet head substrate according to claim 139, wherein said heat acting surface is formed by said heat generating resistor. 146. The substrate for an ink jet head according to claim 139, wherein said heat acting surface is formed by a protective layer on said heat generating resistor. 147. The ink jet head according to claim 146, wherein said protective layer has a Ta layer forming said heat acting surface, and a Si-containing insulating layer interposed between said Ta layer and said heating resistor. Substrate. 148. The heating resistor has a layer thickness of 300.
140. The substrate for an ink jet head according to claim 139, wherein the thickness is Å to 1 µm. 149. The heating resistor having a layer thickness of 100
149. The substrate for an ink jet head according to claim 148, wherein the angle is 0 to 5000 °. 150. An electrothermal converter provided with a heating resistor for generating the thermal energy by applying a current to the ink on the thermal working surface by directly applying thermal energy to the ink and discharging the ink to a passage of the ink. An ink-jet head comprising: a heat-generating resistor; and a heating resistor made of a material containing at least Ir, Re, and Ta in the following composition ratio. 39 atomic% ≦ Ir ≦ 58 atomic% 9 atomic% ≦ Re ≦ 36 atomic% 22 atomic% ≦ Ta ≦ 51 atomic% 151. The ink jet head according to claim 150, wherein a constituent material of said heating resistor is a non-single crystalline substance. 152. The inkjet head according to claim 151, wherein said non-single crystalline material is a polycrystalline material. 153. A material forming the heating resistor,
Ar, O, C, N, Si, B, Na, Cl as impurities
The inkjet head according to claim 150, comprising at least one selected from the group consisting of Fe and Fe. 154. The ink jet head according to claim 150, wherein said electrothermal transducer has a pair of electrodes on said heating resistor for contacting said heating resistor and conducting said current. 155. The ink jet head according to claim 150, wherein said electrothermal transducer has a pair of electrodes under said heating resistor for contacting said heating resistor and conducting said current. 156. The ink jet head according to claim 150, wherein said heat acting surface is formed by said heat generating resistor. 157. The ink jet head according to claim 150, wherein said heat acting surface is formed by a protective layer on said heat generating resistor. 158. The protection layer, wherein a Ta layer forming a heat acting surface, and a Si layer interposed between the Ta layer and the heating resistor.
157. The ink jet head according to claim 157, comprising an insulating layer. 159. The heating resistor having a layer thickness of 300
The inkjet head according to claim 150, wherein the thickness is Å to 1 µm. 160. A layer thickness of the heating resistor is 100
The inkjet head according to claim 150, wherein the angle is 0 to 5000 °. 161. The ink jet head according to claim 150, wherein a direction in which the ink is ejected is substantially the same as a direction in which the ink is supplied to the heat acting surface. 162. The inkjet head according to claim 150, wherein a direction in which the ink is ejected and a direction in which the ink is supplied to the heat acting surface are substantially perpendicular to each other. 163. The ink jet head according to claim 150, wherein a plurality of ejection ports for ejecting ink are provided corresponding to the width of the recording area of the recording member. 164. The ink jet head according to claim 163, wherein the number of the discharge ports is 1000 or more. 165. The ink jet head according to claim 164, wherein the number of the discharge ports is 2000 or more. 166. The ink jet head according to claim 150, wherein the functional element relating to ink ejection is structurally provided inside the surface of the ink jet head base. 167. The ink jet head according to claim 150, wherein the ink jet head is of a cartridge type integrally including an ink tank for storing ink supplied to the heat acting surface. 168. An electrothermal converter having a heat generating resistor for generating a thermal energy which is used for discharging the ink by directly applying thermal energy to the ink on the heat acting surface, the electric heat converting element comprising: An ink-jet apparatus comprising: means for applying a signal to a converter; wherein the heating resistor is made of a material containing at least Ir, Re, and Ta in the following composition ratio. 39 atomic% ≦ Ir ≦ 58 atomic% 9 atomic% ≦ Re ≦ 36 atomic% 22 atomic% ≦ Ta ≦ 51 atomic% 169. The ink jet apparatus according to claim 168, which performs color recording. 170. The means for applying a signal to the electrothermal transducer is a control circuit of an ink jet apparatus.
68. The ink-jet apparatus according to 68. 171. The ink jet apparatus according to claim 168, further comprising a carriage on which a head having the electrothermal transducer is mounted. 172. An ink jet head having an electrothermal converter having a heating resistor which is generated by energizing the thermal energy used for ejecting the ink by directly applying thermal energy to the ink on the thermal working surface. A base for an ink jet head, wherein the heating resistor is made of a material containing at least Ir, Y and Al in the following composition ratios. 54 atomic% ≦ Ir ≦ 85 atomic% 2 atomic% ≦ Y ≦ 18 atomic% 13 atomic% ≦ Al ≦ 30 atomic% 173. The substrate for an ink jet head according to claim 172, wherein a constituent material of said heat generating resistor is a non-single crystalline substance. 174. The substrate for an ink jet head according to claim 173, wherein said non-single crystalline material is a polycrystalline material. 175. The substrate for an ink jet head according to claim 173, wherein said non-single crystalline material is an amorphous material. 176. A material forming the heating resistor,
Ar, O, C, N, Si, B, Na, Cl as impurities
172. The substrate for an ink jet head according to claim 172, comprising at least one selected from the group consisting of Fe and Fe. 177. The substrate for an ink jet head according to claim 172, wherein said electrothermal transducer has a pair of electrodes on said heating resistor for contacting said heating resistor and conducting said current. 178. The base for an ink jet head according to claim 172, wherein said electrothermal transducer has a pair of electrodes below said heating resistor for contacting said heating resistor and conducting said current. 179. The substrate for an ink jet head according to claim 172, wherein said heat acting surface is formed by said heat generating resistor. 180. The substrate for an ink jet head according to claim 172, wherein said heat acting surface is formed by a protective layer on said heat generating resistor. 181. The protection layer, wherein a Ta layer forming a heat acting surface, and Si interposed between the Ta layer and the heating resistor.
181. The substrate for an ink jet head according to claim 180, further comprising an insulating layer. 182. A layer thickness of the heating resistor is 300
183. The substrate for an ink jet head according to claim 181, wherein the thickness is Å to 1 μm. 183. The thickness of the heating resistor layer is 100
182. The substrate for an ink jet head according to claim 182, wherein the angle is 0 ° to 5000 °. 184. An electrothermal converter provided with a heating resistor which is generated by energizing the heat energy used for ejecting the ink by directly applying the heat energy to the ink on the heat acting surface, to the ink passage. An ink-jet head comprising: a heating resistor formed of a material containing at least Ir, Y, and Al in the following composition ratio. 54 atomic% ≦ Ir ≦ 85 atomic% 2 atomic% ≦ Y ≦ 18 atomic% 13 atomic% ≦ Al ≦ 30 atomic% 185. The ink jet head according to claim 184, wherein a constituent material of said heat generating resistor is a non-single crystalline substance. 186. The ink jet head according to claim 185, wherein said non-single crystalline material is a polycrystalline material. 187. The substrate for an ink jet head according to claim 185, wherein said non-single crystalline material is an amorphous material. 188. A material forming the heating resistor,
Ar, O, C, N, Si, B, Na, Cl as impurities
183. The ink jet head according to claim 184, comprising at least one selected from the group consisting of Fe and Fe. 189. The ink jet head according to claim 184, wherein said electrothermal transducer has a pair of electrodes on said heating resistor for contacting said heating resistor and conducting said current. 190. The ink jet head according to claim 184, wherein said electrothermal transducer has a pair of electrodes below said heat generating resistor to contact said heat generating resistor and to conduct said current. 191. The ink jet head according to claim 184, wherein said heat acting surface is formed by said heat generating resistor. 192. The ink jet head according to claim 184, wherein said heat acting surface is formed by a protective layer on said heat generating resistor. 193. The ink jet head according to claim 192, wherein the protective layer has a Ta layer forming the heat acting surface, and a Si-containing insulating layer interposed between the Ta layer and the heating resistor. . 194. The thickness of the layer of the heating resistor is 300.
184. The inkjet head according to claim 184, wherein the thickness is Å to 1 μm. 195. The heating resistor having a layer thickness of 100
The ink jet head according to claim 194, wherein the angle is 0 ° to 5000 °. 196. The ink jet head according to claim 184, wherein a direction in which the ink is ejected is substantially the same as a direction in which the ink is supplied to the heat acting surface. 197. The ink jet head according to claim 184, wherein a direction in which the ink is ejected and a direction in which the ink is supplied to the heat acting surface are substantially perpendicular to each other. 198. The ink jet head according to claim 184, wherein a plurality of ejection ports for ejecting ink are provided corresponding to the width of the recording area of the recording member. 199. The ink jet head according to claim 198, wherein said discharge ports are provided in a number of 1000 or more. 200. The ink jet head according to claim 199, wherein a plurality of said ejection ports are provided in a number of 2000 or more. 201. The ink jet head according to claim 184, wherein the functional element relating to ink ejection is structurally provided inside the surface of the ink jet head base. 202. The ink jet head according to claim 184, wherein said ink jet head is of a cartridge type integrally provided with an ink tank for storing ink supplied to said heat acting surface. 203. An electrothermal converter provided with a heat generating resistor for generating the thermal energy used for discharging ink by directly applying thermal energy to the ink on the heat acting surface, An ink jet apparatus comprising: means for applying a signal to a converter; wherein the heating resistor is made of a material containing at least Ir, Y and Al in the following composition ratios. 54 atomic% ≦ Ir ≦ 85 atomic% 2 atomic% ≦ Y ≦ 18 atomic% 13 atomic% ≦ Al ≦ 30 atomic% 204. The ink jet apparatus according to claim 203, which performs color recording. 205. A control circuit of an ink jet apparatus, wherein the means for giving a signal to the electrothermal transducer is a control circuit of an ink jet apparatus.
03. The inkjet apparatus according to 03. 206. The ink jet apparatus according to claim 203, further comprising a carriage on which the head having the electrothermal transducer is mounted. 207. An ink jet head having an electrothermal converter having a heat generating resistor which is generated by energizing the thermal energy used for ejecting the ink by directly applying thermal energy to the ink on the heat acting surface. The substrate for an ink jet head, wherein the heating resistor is made of a material containing at least Ir, Ru and Cr in the following composition ratio. 21 atomic% ≦ Ir ≦ 51 atomic% 17 atomic% ≦ Ru ≦ 42 atomic% 7 atomic% ≦ Cr ≦ 46 atomic% 208. The substrate for an ink jet head according to claim 207, wherein a constituent material of said heat generating resistor is a non-single crystalline substance. 209. The substrate for an ink jet head according to claim 208, wherein said non-single crystalline material is a polycrystalline material. 210. A material forming the heating resistor,
Ar, O, C, N, Si, B, Na, Cl as impurities
210. The substrate for an ink jet head according to claim 207, comprising at least one selected from the group consisting of and Fe. 211. The substrate for an ink jet head according to claim 207, wherein said electrothermal transducer has a pair of electrodes on said heating resistor for contacting said heating resistor and conducting said current. 212. The substrate for an ink jet head according to claim 207, wherein said electrothermal converter has a pair of electrodes below said heating resistor for contacting said heating resistor and conducting said current. 213. The substrate for an ink jet head according to claim 207, wherein said heat acting surface is formed by said heat generating resistor. 214. The substrate for an ink jet head according to claim 207, wherein said heat acting surface is formed by a protective layer on said heat generating resistor. 215. A Ta layer forming the heat acting surface,
210. The base for an ink jet head according to claim 207, further comprising a Si-containing insulating layer interposed between the Ta layer and the heating resistor. 216. A layer thickness of the heating resistor is 300
210. The substrate for an inkjet head according to claim 207, wherein the thickness is Å to 1 µm. 217. A layer thickness of the heating resistor is 100
231. The substrate for an ink jet head according to claim 216, wherein the angle is 0 to 5000 °. 218. An electrothermal converter provided with a heating resistor for generating heat by applying current to the ink on the heat-acting surface by directly applying heat energy to the ink and discharging the ink to the ink passage. An ink-jet head according to claim 1, wherein said heating resistor is made of a material containing at least Ir, Ru and Cr in the following composition ratios. 21 atomic% ≦ Ir ≦ 51 atomic% 17 atomic% ≦ Ru ≦ 42 atomic% 7 atomic% ≦ Cr ≦ 46 atomic% 219. The ink jet head according to claim 218, wherein a constituent material of said heat generating resistor is a non-single crystalline substance. 220. The ink jet head according to claim 219, wherein said non-single crystalline material is a polycrystalline material. 221. A material forming the heating resistor,
Ar, O, C, N, Si, B, Na, Cl as impurities
218. The ink jet head according to claim 218, comprising at least one selected from the group consisting of Fe and Fe. 222. The ink-jet head according to claim 218, wherein said electrothermal transducer has a pair of electrodes on said heating resistor for contacting with said heating resistor to conduct said current. 223. The ink jet head according to claim 218, wherein said electrothermal transducer has a pair of electrodes below said heating resistor for contacting said heating resistor and conducting said current. 224. The ink jet head according to claim 218, wherein said heat acting surface is formed by said heat generating resistor. 225. The ink jet head according to claim 218, wherein said heat acting surface is formed by a protective layer on said heat generating resistor. 226. The ink jet head according to claim 225, wherein the protective layer has a Ta layer forming the heat acting surface, and a Si-containing insulating layer interposed between the Ta layer and the heating resistor. . 227. A layer thickness of the heating resistor is 300.
218. The inkjet head according to claim 218, wherein the thickness is Å to 1 µm. 228. The thickness of the heating resistor layer is 100
The inkjet head according to claim 218, wherein the angle is 0 to 5000 °. 229. The ink jet head according to claim 218, wherein a direction in which the ink is ejected and a direction in which the ink is supplied to the heat acting surface are substantially the same. 230. The ink jet head according to claim 218, wherein a direction in which the ink is ejected and a direction in which the ink is supplied to the heat acting surface are substantially perpendicular to each other. 231. The ink jet head according to claim 218, wherein a plurality of ejection ports for ejecting ink are provided corresponding to the width of the recording area of the recording member. 232. The ink jet head according to claim 231, wherein a plurality of said discharge ports are provided in a number of 1000 or more. 233. The ink jet head according to claim 232, wherein the number of the discharge ports is 2000 or more. 234. The ink jet head according to claim 218, wherein the functional element relating to ink ejection is structurally provided inside the surface of the ink jet head base. 235. The ink jet head according to claim 218, wherein said ink jet head is of a cartridge type integrally provided with an ink tank for storing ink supplied to said heat acting surface. 236. An electrothermal converter including a heating resistor for generating the thermal energy used for discharging ink by directly applying thermal energy to the ink on the thermal working surface, and An ink jet device comprising: means for applying a signal to a heat converter, wherein the heating resistor is made of a material containing at least Ir, Ru and Cr in the following composition ratios. . 21 atomic% ≦ Ir ≦ 51 atomic% 17 atomic% ≦ Ru ≦ 42 atomic% 7 atomic% ≦ Cr ≦ 46 atomic% 237. The ink jet apparatus according to claim 236, which performs color recording. 238. The means for giving a signal to the electrothermal transducer is a control circuit of an ink jet apparatus.
36. The ink-jet apparatus according to 36. 239. The ink jet apparatus according to claim 236, further comprising a carriage on which a head having the electrothermal transducer is mounted. 240. An ink jet head having an electrothermal converter having a heat generating resistor which is generated by energizing the thermal energy used for ejecting the ink by directly applying thermal energy to the ink on the thermal working surface. The substrate for an ink jet head, wherein the heating resistor is made of a material containing at least Pt and Ta in the following composition ratio. 62 atomic% ≦ Pt ≦ 75 atomic% 25 atomic% ≦ Ta ≦ 38 atomic% 241. The substrate for an ink jet head according to claim 240, wherein a constituent material of said heat generating resistor is a non-single crystalline substance. 242. The substrate for an ink jet head according to claim 241, wherein said non-single crystalline material is a polycrystalline material. 243. A material forming the heating resistor,
Ar, O, C, N, Si, B, Na, Cl as impurities
249. The base for an ink jet head according to claim 240, comprising at least one selected from the group consisting of Fe and Fe. 244. The substrate for an ink-jet head according to claim 240, wherein said electrothermal transducer has a pair of electrodes on said heating resistor for contacting said heating resistor and conducting said current. 245. The substrate for an ink jet head according to claim 240, wherein said electrothermal transducer has a pair of electrodes under said heating resistor for contacting said heating resistor and conducting said current. 246. The substrate for an ink jet head according to claim 240, wherein said heat acting surface is formed by said heat generating resistor. 247. The substrate for an ink jet head according to claim 240, wherein said heat acting surface is formed by a protective layer on said heat generating resistor. 248. The ink jet head according to claim 247, wherein said protective layer has a Ta layer forming said heat acting surface, and a Si-containing insulating layer interposed between said Ta layer and said heating resistor. Substrate. 249. The heating resistor has a layer thickness of 300.
240. The substrate for an inkjet head according to claim 240, wherein the thickness is Å to 1 µm. 250. The heating resistor having a layer thickness of 100
249. The substrate for an ink jet head according to claim 249, wherein the angle is 0 to 5000 °. 251. An electrothermal converter having a heating resistor which is generated by energizing the thermal energy which is used for ejecting the ink by directly applying thermal energy to the ink on the thermal working surface. The heat generating resistor is made of a material containing at least Pt and Ta in the following composition ratio. 62 atomic% ≦ Pt ≦ 75 atomic% 25 atomic% ≦ Ta ≦ 38 atomic% 252. The ink jet head according to claim 251, wherein the constituent material of said heat generating resistor is a non-single crystalline substance. 253. The ink jet head according to claim 252, wherein said non-single crystalline material is a polycrystalline material. 254. A material forming the heating resistor,
Ar, O, C, N, Si, B, Na, Cl as impurities
The ink jet head according to claim 251, comprising at least one selected from the group consisting of Fe and Fe. 255. The ink jet head according to claim 251, wherein the electrothermal transducer has a pair of electrodes on the heating resistor for contacting the heating resistor and conducting the current. 256. The ink jet head according to claim 251, wherein said electrothermal transducer has a pair of electrodes under said heating resistor for contacting said heating resistor to conduct said current. 257. The ink jet head according to claim 251, wherein said heat acting surface is formed by said heat generating resistor. 258. The ink jet head according to claim 251, wherein said heat acting surface is formed by a protective layer on said heat generating resistor. 259. The ink jet head according to claim 258, wherein said protective layer has a Ta layer forming said heat acting surface, and a Si-containing insulating layer interposed between said Ta layer and said heating resistor. . 260. A layer thickness of the heating resistor is 300
The inkjet head according to claim 251, wherein the thickness is Å to 1 μm. 261. The thickness of the layer of the heating resistor is 100
260. The ink-jet head according to claim 260, wherein the angle is 0 ° to 5000 °. 262. The ink jet head according to claim 251, wherein a direction in which the ink is ejected and a direction in which the ink is supplied to the heat acting surface are substantially the same. 263. The ink jet head according to claim 251, wherein a direction in which the ink is ejected and a direction in which the ink is supplied to the heat acting surface are substantially perpendicular to each other. 264. The ink jet head according to claim 251, wherein a plurality of discharge ports for discharging ink are provided corresponding to the width of the recording area of the recording member. 265. The ink jet head according to claim 264, wherein a plurality of the discharge ports are provided in a number of 1000 or more. 266. The ink jet head according to claim 265, wherein a plurality of the discharge ports are provided in a number of 2000 or more. 267. The ink jet head according to claim 251, wherein the functional element relating to ink ejection is of a type structurally provided inside the surface of the ink jet head base. 268. The ink jet head according to claim 251, wherein the ink jet head is of a cartridge type integrally provided with an ink tank for storing ink supplied to the heat acting surface. 269. An electrothermal converter provided with a heat generating resistor for generating the thermal energy used for discharging ink by directly applying thermal energy to the ink on the heat acting surface, and the electric heat An ink-jet apparatus comprising: means for applying a signal to a converter; wherein the heating resistor is made of a material containing at least Pt and Ta in the following composition ratio. 62 atomic% ≦ Pt ≦ 75 atomic% 25 atomic% ≦ Ta ≦ 38 atomic% 270. The ink jet apparatus according to claim 269, which performs color recording. 271. The means for giving a signal to the electrothermal transducer is a control circuit of an ink jet device.
70. The ink-jet apparatus according to 69. 272. The ink jet apparatus according to claim 269, further comprising a carriage on which a head having said electrothermal transducer is mounted.