JPH05198497A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To conduct the formation of a fine resist film having an excellent shape and the formation of a coarse resist film positively by exposing a resist film by using a mask for manufacturing two kinds of diffusion layers having simple constitution and forming the pattern of the fine resist film and the pattern of the coarse resist film through etching. CONSTITUTION:When a mask A, in which a fine pattern section 1a and a coarse pattern section 1b are mixed and shaped, is placed onto the surface of a resist film 3 composed of a positive resist formed onto the surface of a semiconductor substrate 4 and the surface of the resist film 3 is exposed and a fine resist film 3a is developed under conditions under an excellent state, the fine resist film 3a is formed. When a mask B, in which a shielding pattern section 2a and a coarse pattern 2b are mixed and shaped, is placed and the resist film is exposed and a coarse resist film 3b is developed under conditions under the excellent state, the fine resist film 3a is kept under the state left as it is, and the resist film left in the peripheral section of the coarse resist film 3b is etched and removed.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device using a mask for manufacturing a diffusion layer in a semiconductor device manufacturing process.

When a resist film used for manufacturing a diffusion layer is formed in a semiconductor device manufacturing process, a pattern of a mask for exposing the resist film has a structure in which a fine pattern portion and a rough pattern portion are mixed. In such a case, it is difficult to form a fine resist film and a rough resist film by etching at the same time under a certain condition in good condition.

Under the circumstances as described above, there is a demand for a method of manufacturing a semiconductor device capable of forming both a fine resist film and a rough resist film by etching in good condition.

[0004]

2. Description of the Related Art A conventional mask for manufacturing a diffusion layer is shown in FIG.
5, a method of manufacturing a semiconductor device using this mask will be described in detail with reference to FIG.

FIG. 4 is a diagram schematically showing a conventional diffusion layer manufacturing mask, and FIG. 5 is a diagram showing a semiconductor device manufacturing method using the conventional diffusion layer manufacturing mask. The conventional mask for producing a diffusion layer is a mask 11 in which a fine pattern portion 11a and a rough pattern portion 11b are mixedly formed on the surface of a glass substrate 11c as shown in FIG.

The fine pattern portion 11a has a shape corresponding to the shape of the fine resist film 13a formed by etching the resist film 13 formed on the surface of the semiconductor substrate 14 as shown in FIG. The rough pattern 11b has a shape corresponding to the shape of the rough resist film 13b formed by etching the resist film 13 formed on the surface of the semiconductor substrate 14.

When manufacturing a semiconductor device using this diffusion layer manufacturing mask, as shown in FIG. 5, the surface of a resist film 13 made of a positive resist formed on the surface of a semiconductor substrate 14 is used for manufacturing this diffusion layer. When the mask 11 is placed and exposed, the shaded portion of the resist film 13 in FIG. 5 is shielded from light and the other portion is exposed.

When the resist film 13 is developed under the condition that the fine resist film 13a is developed in a good state,
The peripheral portion of the rough resist film 13b remains as shown in FIG. 5 and is not developed in a good state.

On the contrary, if the resist film 13 is developed under the condition that the rough resist film 13b is developed in a good state, the fine resist film 13a is overdeveloped and the fine resist film 13a is over-etched. To be done.

[0010]

The resist film is exposed using a conventional diffusion layer manufacturing mask in which a fine pattern portion and a rough pattern portion are mixed in the mask pattern described above, and the resist film is exposed under constant conditions. If etching is performed at the same time, there is a problem that it is difficult to form either a fine resist film or a rough resist film by etching in a good state.

Under the circumstances as described above, the present invention provides a method of manufacturing a semiconductor device, which can reliably form a fine resist film having a good shape and a rough resist film having a good shape. It is intended to be provided.

[0012]

A method of manufacturing a semiconductor device according to the present invention includes a rough pattern portion having a shape corresponding to the shape of a rough resist film formed by etching a resist film formed on a surface of a semiconductor substrate. This resist film is exposed using a mask A for manufacturing a diffusion layer in which a fine pattern portion is provided in the entire area other than the rough pattern portion, and the resist is formed under etching conditions for forming a fine resist film of the resist film. A step of etching the film, a rough pattern portion having the same shape as this rough pattern portion, and a shielding pattern having a shape corresponding to a region of a fine resist film formed by etching the resist film formed on the surface of the semiconductor substrate. Etching for forming a rough resist film of this resist film by exposing this resist film using a mask B for manufacturing a diffusion layer The grayed condition configured to include a step of etching the resist film.

[0013]

That is, in the present invention, the resist film 3 formed on the surface of the semiconductor substrate 4 is exposed by using the mask A as shown in FIG.
If the resist film 3 is etched under the etching conditions for forming the 3a in a good shape, the fine resist film 3a can be accurately formed, and the shape of the peripheral portion of the rough resist film 3b is an unstable shape. However, as shown in FIG. 3B, the resist film 3 is exposed by using the mask B, and the resist film 3 is formed under the etching conditions for forming the rough resist film 3b of the resist film 3 into a good shape. By etching, the fine resist film 3a can be left as it is without being exposed, and the rough resist film 3b can be accurately formed.

[0014]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A method of manufacturing a semiconductor device using a diffusion layer manufacturing mask according to an embodiment of the present invention will be described in detail below with reference to FIGS.

FIG. 1 is a diagram showing a diffusion layer manufacturing mask A used in a semiconductor device manufacturing method according to an embodiment of the present invention, and FIG. 2 is a diffusion layer manufacturing mask used in a semiconductor device manufacturing method according to an embodiment of the present invention. FIG. 3 is a diagram showing a mask B for manufacturing, and FIG. 3 is a diagram showing a method of manufacturing a semiconductor device according to an embodiment of the present invention in the order of steps.

The diffusion layer manufacturing mask used in the method of manufacturing a semiconductor device according to one embodiment of the present invention has a fine pattern portion 1a and a rough pattern portion 1b mixed on the surface of a glass substrate 1c as shown in FIG. And a mask B2 formed by mixing a shielding pattern portion 2a and a rough pattern 2b on the surface of a glass substrate 2c as shown in FIG. is there.

The rough pattern portion 1b of FIG. 1 and the rough pattern portion 2b of FIG. 2 are the same patterns as the rough pattern portion of the conventional mask, and the fine pattern portion 1a of FIG. 1 is the fine pattern of the conventional mask. The pattern is the same as that of the pattern portion, but the formed area extends over a wide area.
2a is a pattern for covering the area of the fine pattern portion 11a of the conventional mask.

The fine pattern portion 1a of FIG. 1 has a shape corresponding to the shape of the fine resist film 3a formed by etching the resist film 3 formed on the surface of the semiconductor substrate 4 shown in FIG. The rough pattern 1b of No. 1 has a shape corresponding to the shape of the rough resist film 3b formed by etching the resist film 3 formed on the surface of the semiconductor substrate 4 shown in FIG.

When a semiconductor device is manufactured using this diffusion layer manufacturing mask, first, as shown in FIG. 3A, this diffusion is performed on the surface of the resist film 3 made of a positive resist formed on the surface of the semiconductor substrate 4. When the mask A1 for layer production is placed and exposed, the shaded portion of the resist film 3 in FIG. 3 (a) is shielded from light and the other portion is exposed.

When the development of the resist film 3 is performed under the condition that the fine resist film 3a is developed in a good state, the fine resist film 3a is formed in a good shape, but around the rough resist film 3b. As shown in FIG. 3 (a), the part remains and is not developed in a good condition.

Next, as shown in FIG. 3B, the semiconductor substrate 4
When the mask B2 for manufacturing the diffusion layer is placed on the surface of the resist film 3 formed on the surface of the substrate and exposed, the shaded portion of the resist film 3 in FIG. 3B is shielded from light and the other portion is exposed. To be done.

When the development of the resist film 3 is carried out under the condition that the rough resist film 3b is developed in a good state, the fine resist film 3a is not exposed and is kept undeveloped. The resist film remaining on the peripheral portion of the rough resist film 3b is etched and removed as shown in the figure, so that the rough resist film 3b can be formed in a good shape.

[0023]

As is apparent from the above description, according to the present invention, by using two kinds of masks having an extremely simple structure, both a fine resist film pattern of a resist film and a rough resist film pattern can be obtained. Both have the advantage that they can be formed by etching in a good state, and it is possible to provide a mask for manufacturing a diffusion layer and a method for manufacturing a semiconductor device, which can be expected to significantly improve quality.

[Brief description of drawings]

FIG. 1 is a diagram schematically showing a diffusion layer manufacturing mask A used in a semiconductor device manufacturing method according to an embodiment of the present invention;

FIG. 2 is a diagram schematically showing a diffusion layer manufacturing mask B used in a method of manufacturing a semiconductor device according to an embodiment of the present invention;

FIG. 3 is a diagram showing, in the order of steps, a method of manufacturing a semiconductor device using the diffusion layer manufacturing mask of one embodiment according to the present invention.

FIG. 4 is a diagram schematically showing a conventional mask for manufacturing a diffusion layer.

FIG. 5 is a diagram showing a method of manufacturing a semiconductor device using a conventional mask for manufacturing a diffusion layer.

[Explanation of symbols]

1 is a mask A, 1a is a fine pattern portion, 1b is a rough pattern portion, 2 is a mask B, 2a is a shield pattern portion, 2b is a rough pattern portion, 3 is a resist film, 3a is a fine resist film, and 3b is Rough resist film, 4 is a semiconductor substrate,

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁵ Identification code Internal reference number FI Technical indication H01L 21/22 T 9278-4M 21/302 J 7353-4M 21/312 M 8518-4M

Claims (1)

[Claims] 1. A rough resist film (3) formed by etching a resist film (3) formed on a surface of a semiconductor substrate (4).
Rough pattern part (1b) having a shape corresponding to that of b)
And the resist film (3) is exposed by using the mask A (1) for manufacturing a diffusion layer in which the fine pattern part (1a) is provided in the entire area other than the rough pattern part (1b). (3) etching the resist film (3) under the etching conditions for forming the fine resist film (3a), and a rough pattern portion (2) having the same shape as the rough pattern portion (1b).
b) and a resist film formed on the surface of the semiconductor substrate (4)
Fine resist film (3a) formed by etching (3)
Using the mask B (2) for manufacturing the diffusion layer provided with the shielding pattern portion (2a) having a shape corresponding to the area
(3) is exposed to light and the rough resist film (3
The resist film (3) depending on the etching conditions for forming b)
A method of manufacturing a semiconductor device, comprising: