JPH05196680A - Wire breaking and malfunction preventive circuit - Google Patents

Wire breaking and malfunction preventive circuit

Info

Publication number
JPH05196680A
JPH05196680A JP4009857A JP985792A JPH05196680A JP H05196680 A JPH05196680 A JP H05196680A JP 4009857 A JP4009857 A JP 4009857A JP 985792 A JP985792 A JP 985792A JP H05196680 A JPH05196680 A JP H05196680A
Authority
JP
Japan
Prior art keywords
circuit
output
disconnection
inputs
input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4009857A
Other languages
Japanese (ja)
Inventor
Hideki Naka
秀樹 中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mazda Motor Corp
Original Assignee
Mazda Motor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mazda Motor Corp filed Critical Mazda Motor Corp
Priority to JP4009857A priority Critical patent/JPH05196680A/en
Publication of JPH05196680A publication Critical patent/JPH05196680A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To prevent the use in dangerous condition of an electric unit by the wire breaking inside an IC by providing a wire break detecting circuit, which detects the wire breaking between logical circuits, and a malfunction preventive means, which operates by the output, inside the IC which has a plurality of logical circuits. CONSTITUTION:A wire break detecting circuit 4 recedes the output a of a prestage logical circuit 1 and the input of a poststage logical circuit 2, and detects the nonconformity between these two inputs. Moreover, the circuit 4 has a D latch 7 where the outputs of an exclusive logical circuit 6 and a circuit 6 are input to both a C terminal and a CK terminal. And in case that the inputs a and b are in conformity with each other, the output of the gate 6 comparing the inputs a and b is intact at L, so the output of the terminal Q of the latch 7 is intact at L in normal operation state. On the other hand, in case of the nonconformity of the inputs and b, the output of the gate 6 becomes H, and it is latched 7, and is outputted as a stop signal. Since this signal is made by the latch 7, by a through current preventive circuit 5, even if the voltage of a node b is fixed on the level of power source voltage, it continues to be outputted.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、半導体集積回路内の論
理回路間の断線故障を検出して誤動作を防止する断線誤
動作防止回路に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a disconnection malfunction prevention circuit for detecting a disconnection failure between logic circuits in a semiconductor integrated circuit to prevent malfunction.

【0002】[0002]

【従来の技術】従来から半導体集積回路(以下「IC」
と呼ぶ)内部の断線故障は、例えば特開平1−1991
71号公報に開示されているように、そのICの外部か
ら検知していた。そのために、故障検知に時間を要した
り、このICによって制御される電装ユニットに誤動作
および異常消費電流を発生していた。それは、ICの内
部断線による貫通電流がきわめて微弱であったり、IC
としての最終的な出力が偶然に正常な出力と一致してい
る場合があるためである。すなわち、ICの内部断線が
検知されないままその電装ユニットが非常に危険な状態
で使用されている場合も起り得ていたのである。
2. Description of the Related Art Conventionally, a semiconductor integrated circuit (hereinafter referred to as "IC")
Internal disconnection failure is described in, for example, Japanese Unexamined Patent Publication No. 1991/1991.
As disclosed in Japanese Patent Laid-Open No. 71, it was detected from the outside of the IC. Therefore, it takes time to detect a failure, and malfunctions and abnormal current consumption occur in the electrical unit controlled by this IC. This is because the penetration current due to internal disconnection of the IC is extremely weak,
This is because there is a case where the final output as is coincidentally with the normal output. That is, it may happen that the electrical equipment unit is used in a very dangerous state without detecting the internal disconnection of the IC.

【0003】このような課題に鑑み、本発明は、ICの
内部断線による電装ユニットの危険な状態での使用を回
避することができる断線誤動作防止回路を提供すること
を目的とする。
In view of the above problems, it is an object of the present invention to provide a disconnection malfunction prevention circuit capable of avoiding use of an electrical component unit in a dangerous state due to internal disconnection of an IC.

【0004】[0004]

【課題を解決するための手段】本発明による断線誤動作
防止回路は、複数の論理回路を有するIC内に、論理回
路間の断線を検知する断線検知回路と、この断線検知回
路の出力によって作動される誤動作防止手段とを設けた
ことを特徴とする。
DISCLOSURE OF THE INVENTION A disconnection malfunction prevention circuit according to the present invention is operated by an disconnection detection circuit for detecting disconnection between logic circuits in an IC having a plurality of logic circuits, and an output of the disconnection detection circuit. It is characterized in that a malfunction prevention means is provided.

【0005】上記断線検知回路は、前段論理回路の出力
と、後段論理回路の入力との不一致の検出に基づいて作
動するものよりなる。
The disconnection detection circuit is configured to operate based on the detection of a mismatch between the output of the preceding logic circuit and the input of the succeeding logic circuit.

【0006】また、上記誤動作防止手段は、IC内の論
理回路の動作を停止させる手段を有する。
The malfunction preventing means has means for stopping the operation of the logic circuit in the IC.

【0007】さらに、上記誤動作防止手段は、このIC
によって制御されるユニットに停止信号を出力する手段
を有する。
Further, the malfunction preventing means is the IC
It has means for outputting a stop signal to the unit controlled by.

【0008】[0008]

【作用および効果】本発明によれば、ICの内部断線に
よる電装部品の危険な状態での使用が回避できる。ま
た、本回路から出力される停止信号を使用することによ
って、電装ユニット内にフォールトトレラントシステム
を電装ユニット内に組込むことが容易となる。
According to the present invention, it is possible to avoid the use of the electric component in a dangerous state due to the internal disconnection of the IC. Further, by using the stop signal output from this circuit, it becomes easy to incorporate the fault tolerant system into the electrical unit.

【0009】[0009]

【実施例】以下、本発明の実施例を図面に基づいて説明
する。
Embodiments of the present invention will be described below with reference to the drawings.

【0010】図1において、P−MOSトランジスタT
r1とN−MOSトランジスタTr2とによって構成さ
れたCMOSインバータである前段論理回路1の出力端
と、同様にP−MOSトランジスタTr3とN−MOS
トランジスタTr4とによって構成されたCMOSイン
バータである後段論理回路2の入力端とが信号線3によ
って接続されており、この信号線3の断線を検知するた
めに、信号線3に対して並列に接続された断線検知回路
と、上記信号線3が断線した場合に、後段論理回路2の
P−MOSトランジスタTr3とN−MOSトランジス
タTr4とが同時に“ON”状態となって、異常な貫通
電流が流れるのを防止する異常貫通電流防止回路5とが
設けられている。
In FIG. 1, a P-MOS transistor T
The output terminal of the pre-stage logic circuit 1 which is a CMOS inverter constituted by r1 and the N-MOS transistor Tr2, and similarly the P-MOS transistor Tr3 and the N-MOS.
A signal line 3 is connected to an input end of a rear logic circuit 2 which is a CMOS inverter constituted by a transistor Tr4, and is connected in parallel to the signal line 3 in order to detect disconnection of the signal line 3. When the disconnection detection circuit that has been disconnected and the signal line 3 are disconnected, the P-MOS transistor Tr3 and the N-MOS transistor Tr4 of the subsequent logic circuit 2 are simultaneously turned on, and an abnormal through current flows. An abnormal through current prevention circuit 5 is provided to prevent this.

【0011】断線検知回路4は、前段論理回路1の出力
aと、入力断線被モニタ回路である後段論理回路2の入
力bとをそれぞれ入力として、これら2つの入力の不一
致を検出する回路であり、図2に示すように、排他的論
理和回路6(以下「EORゲート」と呼ぶ)と、このE
ORゲート6の出力がD端子とCK端子との双方に入力
されるDラッチ7とにより構成されている。
The disconnection detection circuit 4 is a circuit which receives the output a of the front-stage logic circuit 1 and the input b of the rear-stage logic circuit 2 which is an input disconnection monitored circuit as inputs and detects a mismatch between these two inputs. 2, the exclusive OR circuit 6 (hereinafter referred to as "EOR gate") and the E
The output of the OR gate 6 is composed of a D latch 7 input to both the D terminal and the CK terminal.

【0012】図2において、まず初めに、入力a,bが
一致している場合は、a,bを比較しているEORゲー
ト6の出力が“L”のままであるため、Dラッチ7のQ
端子の出力(すなわちストップ信号“H”イネーブル)
は、“L”状態のままであり、正常動作状態となってい
る。
In FIG. 2, first, when the inputs a and b match each other, the output of the EOR gate 6 comparing a and b remains "L", so that the D latch 7 Q
Output of terminal (that is, stop signal "H" enable)
Remains in the “L” state and is in a normal operation state.

【0013】一方、入力a,bが不一致の場合は、EO
Rゲート6の出力が“H”となり、それがDラッチ7で
ラッチされ、直ちにストップ信号として出力され続け
る。このストップ信号は、Dラッチ7により形成される
ので、ひとたび出力されれば、貫通電流防止回路5によ
り、ノードbの電圧が電源電圧レベルに固定されても出
力され続ける(勿論EORゲート6の出力は“L”に戻
る)。
On the other hand, if the inputs a and b do not match, EO
The output of the R gate 6 becomes "H", which is latched by the D latch 7 and immediately continues to be output as a stop signal. Since this stop signal is formed by the D latch 7, once it is output, it continues to be output even if the voltage of the node b is fixed to the power supply voltage level by the shoot-through current prevention circuit 5 (of course, the output of the EOR gate 6). Returns to "L").

【0014】また、このストップ信号は半導体集積回路
の出力端子のうちの1つから外部へ導出されて、この半
導体集積回路によって制御される電装ユニットの動作を
停止させる機能も有する。
The stop signal also has a function of being led to the outside from one of the output terminals of the semiconductor integrated circuit to stop the operation of the electrical equipment unit controlled by the semiconductor integrated circuit.

【0015】図3は貫通電流防止回路5の一例構成を示
す図である。この回路5は、入力断線被モニタ回路であ
る後段論理回路2の入力bをその入力とし、入力bの電
位レベルが電源電圧レベルとグラウンドレベルとの中間
レベルにあるときに、入力bのレベルを電源電圧レベル
に引上げるカレントミラー回路であり、P−MOSトラ
ンジスタTr5,Tr6と、N−MOSトランジスタT
r7,Tr8とによって構成されている。
FIG. 3 is a diagram showing an example of the structure of the through current prevention circuit 5. This circuit 5 uses the input b of the post-stage logic circuit 2 which is an input disconnection monitored circuit as its input, and changes the level of the input b when the potential level of the input b is at the intermediate level between the power supply voltage level and the ground level. A current mirror circuit that raises the voltage to the power supply voltage level, and includes P-MOS transistors Tr5 and Tr6 and an N-MOS transistor T.
It is composed of r7 and Tr8.

【0016】次に異常貫通電流防止回路5の動作につい
て説明すると、まず信号線3が断線していないときに
は、この異常貫通電流防止回路5のイネーブル信号であ
る断線検知回路4の出力(すなわちストップ信号)が
“L”であるため、N−MOSトランジスタTr7,T
r8は“OFF”状態である。したがって、互いに接続
されたP−MOSトランジスタTr5,Tr6のゲート
の電位cは、これらトランジスタTr5,Tr6をOF
Fさせる電位において安定している。すなわち、信号線
3の非断線状態では、異常貫通電流防止回路5は動作し
ない。
The operation of the abnormal shoot-through current prevention circuit 5 will now be described. First, when the signal line 3 is not disconnected, the output of the disconnection detection circuit 4 which is an enable signal of the abnormal shoot-through current prevention circuit 5 (that is, a stop signal). ) Is "L", the N-MOS transistors Tr7, T
r8 is in the "OFF" state. Therefore, the potential c of the gates of the P-MOS transistors Tr5 and Tr6 connected to each other causes the transistors Tr5 and Tr6 to be OF
It is stable at the F potential. That is, the abnormal shoot-through current prevention circuit 5 does not operate when the signal line 3 is not disconnected.

【0017】一方、信号線3が断線した場合には、上述
のストップ信号が“H”となり、さらに入力bの電位が
電源電圧レベルとグラウンドレベルとの中間レベルにな
り、回路5はイネーブル状態となる。すなわち、N−M
OSトランジスタTr7およびTr8がともに“ON”
状態となり、電位cのレベルが低下する。したがって、
P−MOSトランジスタTr5およびTr6が“ON”
状態になり、トランジスタTr6を通じて入力bのレベ
ルが電源電圧レベルに引上げられる。このように入力b
が電源電圧レベルに固定されることで、後段論理回路2
を流れる貫通電流が消滅する。
On the other hand, when the signal line 3 is broken, the above-mentioned stop signal becomes "H", the potential of the input b becomes an intermediate level between the power supply voltage level and the ground level, and the circuit 5 becomes the enable state. Become. That is, NM
Both OS transistors Tr7 and Tr8 are "ON"
Then, the level of the potential c decreases. Therefore,
P-MOS transistors Tr5 and Tr6 are "ON"
Then, the level of the input b is raised to the power supply voltage level through the transistor Tr6. Input b
Is fixed to the power supply voltage level, the second-stage logic circuit 2
The penetrating current flowing through disappears.

【0018】すなわち、図3の回路によれば、信号線3
の断線によって、後段論理回路2の入力bが電源電圧と
グラウンドレベルとの間でふらついている場合に、その
レベルを電源電圧に固定し、後段論理回路2に異常な貫
通電流が流れるのを防止できるから、後段論理回路2以
降の回路の誤動作も併せて防止することができる。
That is, according to the circuit of FIG.
When the input b of the latter-stage logic circuit 2 fluctuates between the power supply voltage and the ground level due to the disconnection, the level is fixed to the power supply voltage to prevent an abnormal through current from flowing to the latter-stage logic circuit 2. Therefore, it is possible to prevent malfunction of the circuits subsequent to the logic circuit 2 at the same time.

【0019】なお、本実施例における異常貫通電流防止
回路5は、信号線3が断線したときに後段論理回路2の
入力bを電源電圧に固定するように構成されているが、
上記入力bをグラウンドレベルに固定する機能を有する
ものに上記回路5を代えてもよいことは言うまでもな
い。
Although the abnormal shoot-through current prevention circuit 5 in this embodiment is configured to fix the input b of the subsequent logic circuit 2 to the power supply voltage when the signal line 3 is disconnected,
It goes without saying that the circuit 5 may be replaced with a circuit having the function of fixing the input b to the ground level.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明による断線誤動作防止回路のブロック図FIG. 1 is a block diagram of a disconnection malfunction prevention circuit according to the present invention.

【図2】断線検知回路の回路図FIG. 2 is a circuit diagram of a disconnection detection circuit.

【図3】異常貫通電流防止回路の回路図FIG. 3 is a circuit diagram of an abnormal shoot-through current prevention circuit.

【符号の説明】[Explanation of symbols]

1 前段論理回路 2 後段論理回路 3 信号線 4 断線検知回路 5 異常貫通電流防止回路 6 EORゲート 7 Dラッチ 1 front stage logic circuit 2 rear stage logic circuit 3 signal line 4 disconnection detection circuit 5 abnormal through current prevention circuit 6 EOR gate 7 D latch

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 複数の論理回路を有する半導体集積回路
内に、前記論理回路間の断線を検知する断線検知回路
と、この断線検知回路の出力によって作動される誤動作
防止手段とが設けられてなることを特徴とする断線誤動
作防止回路。
1. A semiconductor integrated circuit having a plurality of logic circuits is provided with a disconnection detection circuit for detecting a disconnection between the logic circuits, and a malfunction prevention unit operated by an output of the disconnection detection circuit. A disconnection malfunction prevention circuit characterized by the following.
【請求項2】 前記断線検知回路は、前段論理回路の出
力と、後段論理回路の入力との不一致の検出に基づいて
作動するものよりなることを特徴とする請求項1記載の
断線誤動作防止回路。
2. The disconnection malfunction prevention circuit according to claim 1, wherein the disconnection detection circuit is configured to operate based on detection of a mismatch between an output of the preceding logic circuit and an input of the succeeding logic circuit. .
【請求項3】 前記誤動作防止手段は、前記半導体集積
回路内の論理回路の動作を停止させる手段を有すること
を特徴とする請求項1記載の断線誤動作防止回路。
3. The disconnection malfunction prevention circuit according to claim 1, wherein the malfunction prevention means includes means for stopping the operation of the logic circuit in the semiconductor integrated circuit.
【請求項4】 前記誤動作防止手段は、前記半導体集積
回路によって制御されるユニットに停止信号を出力する
手段を有することを特徴とする請求項1記載の断線誤動
作防止回路。
4. The disconnection malfunction prevention circuit according to claim 1, wherein the malfunction prevention means includes means for outputting a stop signal to a unit controlled by the semiconductor integrated circuit.
JP4009857A 1992-01-23 1992-01-23 Wire breaking and malfunction preventive circuit Pending JPH05196680A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4009857A JPH05196680A (en) 1992-01-23 1992-01-23 Wire breaking and malfunction preventive circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4009857A JPH05196680A (en) 1992-01-23 1992-01-23 Wire breaking and malfunction preventive circuit

Publications (1)

Publication Number Publication Date
JPH05196680A true JPH05196680A (en) 1993-08-06

Family

ID=11731808

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4009857A Pending JPH05196680A (en) 1992-01-23 1992-01-23 Wire breaking and malfunction preventive circuit

Country Status (1)

Country Link
JP (1) JPH05196680A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011257278A (en) * 2010-06-09 2011-12-22 Fujitsu Ltd Semiconductor integrated circuit
US10608290B2 (en) 2014-11-27 2020-03-31 Semiconductor Energy Laboratory Co., Ltd. Flexible battery and electronic device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011257278A (en) * 2010-06-09 2011-12-22 Fujitsu Ltd Semiconductor integrated circuit
US10608290B2 (en) 2014-11-27 2020-03-31 Semiconductor Energy Laboratory Co., Ltd. Flexible battery and electronic device
US10886572B2 (en) 2014-11-27 2021-01-05 Semiconductor Energy Laboratory Co., Ltd. Flexible battery and electronic device
US11670807B2 (en) 2014-11-27 2023-06-06 Semiconductor Energy Laboratory Co., Ltd. Flexible battery and electronic device

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