JPH05190647A - Wafer stage - Google Patents
Wafer stageInfo
- Publication number
- JPH05190647A JPH05190647A JP357792A JP357792A JPH05190647A JP H05190647 A JPH05190647 A JP H05190647A JP 357792 A JP357792 A JP 357792A JP 357792 A JP357792 A JP 357792A JP H05190647 A JPH05190647 A JP H05190647A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- gas
- supporting surface
- blowoff
- wafer stage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Manipulator (AREA)
- Physical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、真空中のウエハ処理
装置でウエハを支持するウエハステージの改良に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to improvement of a wafer stage for supporting a wafer in a wafer processing apparatus in vacuum.
【０００２】[0002]
【従来の技術】図２は従来のウエハステージを示す断面
図であり、図において、１はほぼ円形状のウエハ、２は
ウエハ１を載置するウエハステージ、２ａはウエハ１を
載置する支持面で、平坦な面がウエハ１の径とほぼ同じ
径に構成されている。２ｂは支持面２ａの外周に設けら
れた傾斜面、２ｃは支持面２ａのほぼ中心部に設けら
れ、後述の昇降ロッドの頭部３ａを収納する凹部、２ｄ
は凹部２ｃのほぼ中心部に支持面２ａとほぼ直角方向に
設けられた軸穴、３は昇降ロッドで、支持面２ａに収容
されウエハ１を受ける頭部３ａと頭部３ａと接続され軸
穴２ｃを長手方向に移動可能な軸３ｂを備えている。2. Description of the Related Art FIG. 2 is a cross-sectional view showing a conventional wafer stage. In the figure, 1 is a substantially circular wafer, 2 is a wafer stage on which the wafer 1 is mounted, and 2a is a support on which the wafer 1 is mounted. The flat surface is formed to have a diameter substantially the same as the diameter of the wafer 1. Reference numeral 2b denotes an inclined surface provided on the outer periphery of the support surface 2a, 2c is provided substantially at the center of the support surface 2a, and a concave portion 2d for accommodating a head 3a of a lifting rod described later is provided.
Is a shaft hole provided substantially in the center of the recess 2c in a direction substantially perpendicular to the support surface 2a, and 3 is an elevating rod, which is connected to the head 3a and the head 3a housed in the support surface 2a for receiving the wafer 1 and the shaft hole. It has a shaft 3b capable of moving 2c in the longitudinal direction.
【０００３】次に動作について説明する。図２のウエハ
ステージは真空中に配置され、図示鎖線で示すように、
搬送装置（図示せず）によってウエハ１が支持面２ａと
ほぼ対向した位置まで運ばれると、昇降ロッド３を上昇
させて頭部３ａをウエハ１と接触させ、搬送装置から昇
降ロッド３へとウエハ１の受け渡しが行われる。ウエハ
１を渡すと搬送装置はウエハステージ２から離れ、ウエ
ハ１を載せた昇降ロッド３は下降し、ウエハ１の中心が
昇降ロッド３の中心軸と一致していると、ウエハ１は図
示のようにウエハステージ２の支持面２ａに正常に載置
される。Next, the operation will be described. The wafer stage of FIG. 2 is placed in a vacuum, and as shown by the chain line in the drawing,
When the wafer 1 is carried to a position substantially opposite to the supporting surface 2a by a carrier device (not shown), the elevating rod 3 is lifted to bring the head 3a into contact with the wafer 1, and the wafer is moved from the carrier device to the elevating rod 3. 1 is delivered. When the wafer 1 is transferred, the transfer device is separated from the wafer stage 2, the elevating rod 3 on which the wafer 1 is placed descends, and when the center of the wafer 1 is aligned with the central axis of the elevating rod 3, the wafer 1 is as shown in the figure. Then, the wafer stage 2 is normally placed on the support surface 2a of the wafer stage 2.
【０００４】[0004]
【発明が解決しようとする課題】従来のウエハステージ
は以上のように、ウエハ１と昇降ロッド３との中心が合
ったとき、ウエハ１がウエハステージ２の支持面２ａに
載置されるので、図３に示すようにウエハ１の搬送位置
が一方にずれた場合、真空中では空気が希薄のため滑り
が生じにくいので、ウエハ１の一端がウエハステージ２
の傾斜面２ｂに引っ掛かり、ウエハ１の他端は支持面２
ａと接触して傾斜し、ウエハ１が支持面２ａに正常に載
置されないという問題点があった。As described above, in the conventional wafer stage, when the wafer 1 and the elevating rod 3 are aligned with each other, the wafer 1 is placed on the supporting surface 2a of the wafer stage 2. As shown in FIG. 3, when the transfer position of the wafer 1 is displaced to one side, the air is diluted in the vacuum and slippage is unlikely to occur.
The other end of the wafer 1 is caught on the inclined surface 2b of the support surface 2
There is a problem in that the wafer 1 is tilted by contacting it and the wafer 1 is not normally placed on the support surface 2a.
【０００５】この発明は上記のような問題点を解消する
ためになされたもので、ウエハの搬送位置が支持面から
ずれても、ウエハを支持面に正常に載置できるウエハス
テージを得ることを目的とする。The present invention has been made in order to solve the above-mentioned problems, and an object of the present invention is to obtain a wafer stage which can normally place a wafer on the support surface even if the wafer transfer position deviates from the support surface. To aim.
【０００６】[0006]
【課題を解決するための手段】この発明に係るウエハス
テージは、ウエハステージに気体の吹き出しが可能な吹
出口を設けたものである。A wafer stage according to the present invention comprises a wafer stage provided with a blow-out port capable of blowing gas.
【０００７】[0007]
【作用】この発明によるウエハステージは、吹出口から
吹き出された気体がウエハを押し上げるので、ウエハが
傾斜面に引っ掛かっていると気体がウエハと傾斜面との
間を通り、気体による潤滑作用でウエハは傾斜面を滑り
支持面に滑り降りる。In the wafer stage according to the present invention, the gas blown out from the air outlet pushes up the wafer, so that if the wafer is caught on the inclined surface, the gas passes between the wafer and the inclined surface, and the wafer is lubricated by the gas. Slides down an inclined surface to a supporting surface.
【０００８】[0008]
【実施例】実施例１．以下、この発明の実施例１を図に
ついて説明する。図１において、１はウエハ、２はウエ
ハステージ、２ａは支持面、２ｂは傾斜面、２ｃは凹
部、２ｄは軸穴、２ｅは気体が流通できる流路、２ｆは
支持面２ａの径より小さい径の位置に開口し、流路２ｅ
と接続された吹出口、３は昇降ロッド、３ａは頭部、３
ｂは軸である。EXAMPLES Example 1. Embodiment 1 of the present invention will be described below with reference to the drawings. In FIG. 1, 1 is a wafer, 2 is a wafer stage, 2a is a supporting surface, 2b is an inclined surface, 2c is a concave portion, 2d is a shaft hole, 2e is a flow path through which gas can flow, and 2f is smaller than the diameter of the supporting surface 2a. Open at the diameter position, and the flow path 2e
3 is a lifting rod, 3a is a head, 3
b is an axis.
【０００９】次に動作について説明する。図１におい
て、搬送装置（図示せず）で運ばれたウエハ１を昇降ロ
ッド３の頭部３ａで受け取ったとき、図に鎖線で示すよ
うに、ウエハ１の中心が頭部３ａの中心からずれた状態
で昇降ロッド３を下降させると、ウエハ１の一端がウエ
ハステージ２の傾斜面２ｂに引っ掛かり、他端は昇降ロ
ッド３の下降に従って支持面２ａと接触し、ウエハ１は
傾斜した状態で支持される。このようなウエハ１の異常
載置を状態監視装置（図示せず）で検出し、検出信号で
気体供給装置（図示せず）を動作させ、不活性の気体を
流路２ｅに供給すると、吹出口２ｆから吹き出され気体
がウエハ１に当たり、ウエハ１の傾斜に沿って外周方向
に拡散するので、傾斜面２ｂと接触し吹出口２ｆから遠
いウエハ１の一端ではウエハ１と傾斜面２ｂとの間を気
体が通り、支持面２ａと接触し吹出口２ｆと近いウエハ
１の他端は、気体の吹き出し圧力によってウエハ１が支
持面２ａから離れるように浮き上がる。この他端の浮き
上がりで傾斜面２ｂと接触した一端は気体を潤滑材とし
て支持面２ａに滑り降り、ウエハ１は正規の状態で支持
面２ａに載置される。Next, the operation will be described. In FIG. 1, when the wafer 1 carried by a transfer device (not shown) is received by the head 3a of the elevating rod 3, the center of the wafer 1 is displaced from the center of the head 3a as shown by the chain line in the figure. When the elevating rod 3 is lowered in this state, one end of the wafer 1 is caught on the inclined surface 2b of the wafer stage 2, and the other end contacts the supporting surface 2a as the elevating rod 3 descends, so that the wafer 1 is supported in an inclined state. To be done. Such abnormal mounting of the wafer 1 is detected by a state monitoring device (not shown), a gas supply device (not shown) is operated by the detection signal, and an inert gas is supplied to the flow path 2e. The gas blown out from the outlet 2f hits the wafer 1 and diffuses in the outer circumferential direction along the inclination of the wafer 1, so that at one end of the wafer 1 which is in contact with the inclined surface 2b and far from the outlet 2f, it is between the wafer 1 and the inclined surface 2b. The gas passes through, and the other end of the wafer 1 that is in contact with the support surface 2a and close to the outlet 2f floats up so that the wafer 1 separates from the support surface 2a due to the gas blowing pressure. One end of the other end that is in contact with the inclined surface 2b due to the floating up slides down onto the support surface 2a by using gas as a lubricant, and the wafer 1 is placed on the support surface 2a in a normal state.
【００１０】実施例２．実施例１においては、昇降ロッ
ドの下降でウエハの載置状態を検出し、異常載置のとき
気体を吹き出すようにしたが、ウエハの載置状態を検出
せずに昇降ロッドの下降動作で、気体を吹き出すように
してもよい。Embodiment 2. In the first embodiment, the mounting state of the wafer is detected by lowering the elevating rod, and the gas is blown out at the time of abnormal mounting. However, the lowering operation of the elevating rod does not detect the mounting state of the wafer. You may make it blow out gas.
【００１１】実施例３．実施例１においては、吹出口を
環状に構成した場合について説明したが、吹出口は環状
に限らず、ウエハの搬送方向と同じ方向で、ウエハが傾
斜面に引っ掛かったときウエハに気体が当たるように複
数個の吹出口を設けてもよい。Embodiment 3. In the first embodiment, the case where the air outlet is formed in the ring shape has been described. However, the air outlet is not limited to the ring shape, and gas may hit the wafer when the wafer is caught on the inclined surface in the same direction as the wafer transfer direction. It is also possible to provide a plurality of outlets.
【００１２】[0012]
【発明の効果】以上のようにこの発明によれば、ウエハ
ステージに気体の吹き出しが可能な吹出口を設けたの
で、吹出口から吹き出された気体でウエハの姿勢が制御
され、気体による潤滑作用でウエハは傾斜面から滑り降
り、ウエハを支持面に正常に載置できるという効果が得
られる。As described above, according to the present invention, the wafer stage is provided with the blow-out port through which the gas can be blown out. Therefore, the posture of the wafer is controlled by the gas blown out from the blow-out port, and the lubricating action by the gas is achieved. Then, the wafer slides down from the inclined surface, and the effect that the wafer can be normally placed on the support surface is obtained.
【図１】この発明の実施例１によるウエハステージの断
面図である。FIG. 1 is a sectional view of a wafer stage according to a first embodiment of the present invention.
【図２】従来のウエハステージを示す断面図である。FIG. 2 is a sectional view showing a conventional wafer stage.
【図３】従来のウエハステージのウエハ異常載置状態を
示す断面図である。FIG. 3 is a cross-sectional view showing an abnormally mounted state of a wafer on a conventional wafer stage.
１ ウエハ ２ ウエハステージ ２ａ 支持面 ２ｂ 傾斜面 ２ｅ 流路 ２ｆ 吹出口 ３ 昇降ロッド ３ａ 頭部 1 Wafer 2 Wafer Stage 2a Supporting Surface 2b Inclined Surface 2e Flow Path 2f Blowout Port 3 Lifting Rod 3a Head
Claims (1)
されたウエハを昇降ロッドで受け上記支持面に載置する
ウエハステージにおいて、上記支持面に気体の吹き出し
が可能な吹出口を設けたことを特徴とするウエハステー
ジ。1. A wafer stage for receiving a wafer transferred to a position facing a support surface by a transfer device by an elevating rod and mounting the wafer on the support surface, wherein a blowout port capable of blowing gas is provided on the support surface. A wafer stage characterized in that
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP357792A JPH05190647A (en) | 1992-01-13 | 1992-01-13 | Wafer stage |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP357792A JPH05190647A (en) | 1992-01-13 | 1992-01-13 | Wafer stage |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05190647A true JPH05190647A (en) | 1993-07-30 |
Family
ID=11561310
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP357792A Pending JPH05190647A (en) | 1992-01-13 | 1992-01-13 | Wafer stage |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05190647A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10335429A (en) * | 1997-06-04 | 1998-12-18 | Tokyo Electron Ltd | Wafer allignment and apparatus therefor |
| CN108183083A (en) * | 2017-12-28 | 2018-06-19 | 武汉华星光电技术有限公司 | The positioning device of panel |
| CN111312644A (en) * | 2020-02-26 | 2020-06-19 | 厦门通富微电子有限公司 | Automatic wafer alignment device and etching machine |
-
1992
- 1992-01-13 JP JP357792A patent/JPH05190647A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10335429A (en) * | 1997-06-04 | 1998-12-18 | Tokyo Electron Ltd | Wafer allignment and apparatus therefor |
| CN108183083A (en) * | 2017-12-28 | 2018-06-19 | 武汉华星光电技术有限公司 | The positioning device of panel |
| CN111312644A (en) * | 2020-02-26 | 2020-06-19 | 厦门通富微电子有限公司 | Automatic wafer alignment device and etching machine |
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