JPH0518288B2 - - Google Patents

Info

Publication number
JPH0518288B2
JPH0518288B2 JP58206563A JP20656383A JPH0518288B2 JP H0518288 B2 JPH0518288 B2 JP H0518288B2 JP 58206563 A JP58206563 A JP 58206563A JP 20656383 A JP20656383 A JP 20656383A JP H0518288 B2 JPH0518288 B2 JP H0518288B2
Authority
JP
Japan
Prior art keywords
transistor
current
constant current
present
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58206563A
Other languages
Japanese (ja)
Other versions
JPS6097708A (en
Inventor
Yoshiaki Sano
Sukebumi Tokuriki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58206563A priority Critical patent/JPS6097708A/en
Publication of JPS6097708A publication Critical patent/JPS6097708A/en
Publication of JPH0518288B2 publication Critical patent/JPH0518288B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34DC amplifiers in which all stages are DC-coupled
    • H03F3/343DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/302Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Description

【発明の詳細な説明】 (A) 発明の技術分野 本発明は、定電流回路、特に、流がれる電流の
温度係数が負の値をもつ第1回路と同じく温度係
数が正の値をもつ第2回路とをもつよう構成さ
れ、任意所望の温度係数をもつ形でかつ電源電圧
の変動の影響の少ないよう構成した定電流回路に
関するものである。
[Detailed Description of the Invention] (A) Technical Field of the Invention The present invention relates to a constant current circuit, particularly a constant current circuit in which the temperature coefficient of the flowing current is a positive value like the first circuit in which the temperature coefficient of the flowing current is a negative value. The present invention relates to a constant current circuit configured to have a second circuit, and configured to have an arbitrary desired temperature coefficient and to be less affected by fluctuations in power supply voltage.

(B) 技術の背景と問題点 一般にIC回路に搭載される定電流回路におい
ては、トランジスタのベース電位を所定レベルに
保持する構成が用いられ、流がれる電流の温度係
数は一般に負の値をもつものとなる。また上記ベ
ース電位を与える電源電圧の変動による影響を受
け易いものとなる。
(B) Technical Background and Problems Generally, in constant current circuits installed in IC circuits, a configuration is used in which the base potential of the transistor is maintained at a predetermined level, and the temperature coefficient of the flowing current generally has a negative value. It becomes a thing. Furthermore, it is susceptible to fluctuations in the power supply voltage that provides the base potential.

(C) 発明の目的と構成 本発明は上記の点を解決することを目的として
おり、本発明の定電流回路は、電源と接地間に直
列に接続された第1、第2のトランジスタと、出
力端と接地間に直列に接続された第3、第4のト
ランジスタとを具備し、該第1のトランジスタの
コレクタとベースが該第3のトランジスタのベー
スに共通接続され、該第2のトランジスタと第4
のトランジスタのコレクタとベースが交差接続さ
れ、第4のトランジスタのエミツタ面積が第2の
トランジスタのn倍で、該出力端と接地間に抵抗
と直列に接続され且つそのベースが該第3のトラ
ンジスタのベースに接続された第5のトランジス
タを具備し、該出力端を定電流源とすることを特
徴としている。以下図面を参照しつつ説明する。
(C) Object and structure of the invention The present invention aims to solve the above points, and the constant current circuit of the present invention includes first and second transistors connected in series between a power supply and ground, third and fourth transistors connected in series between the output end and ground, the collector and base of the first transistor are commonly connected to the base of the third transistor, and the second transistor and the fourth
The collectors and bases of the transistors are cross-connected, the emitter area of the fourth transistor is n times that of the second transistor, the fourth transistor is connected in series with a resistor between the output terminal and the ground, and the base thereof is connected to the third transistor. The fifth transistor is connected to the base of the transistor, and the output terminal is a constant current source. This will be explained below with reference to the drawings.

(D) 発明の実施例 図は本発明の一実施例構成を示す。図中、Q1
Q2,Q3,Q4,Q5は夫々本発明でいう第1、第
2、第3、第4、第5のトランジスタであつて、
特にトランジスタQ4が本発明にいう大飽和電流
トランジスタに相当している。またR1,R2,R3
は夫々抵抗、Vccは電源電圧、I0は本発明におい
て得られる定電流、I3は本発明にいう第1回路を
流れる電流、I2は本発明にいう第2回路を流れる
電流、I1は本発明にいう制御回路を流れる電流を
表わしている。
(D) Embodiment of the invention The figure shows the configuration of an embodiment of the invention. In the figure, Q 1 ,
Q 2 , Q 3 , Q 4 , and Q 5 are the first, second, third, fourth, and fifth transistors referred to in the present invention, respectively, and
In particular, transistor Q4 corresponds to the large saturation current transistor according to the present invention. Also R 1 , R 2 , R 3
are the respective resistances, Vcc is the power supply voltage, I 0 is the constant current obtained in the present invention, I 3 is the current flowing through the first circuit according to the present invention, I 2 is the current flowing through the second circuit according to the present invention, I 1 represents the current flowing through the control circuit according to the present invention.

図において、トランジスタQ1,Q2,Q3のエミ
ツタ面積が同じとしかつ単位1とし、これに対し
てトランジスタQ4のエミツタ面積をn倍の単位
nとし、更にトランジスタの電流増幅率が十分に
大とする。この場合には、トランジスタQ1,Q4
抵抗R2を通る回路と、トランジスタQ3,Q2を通
る回路とを考えて、次の式が成立する。即ち、 kT/qlnI1/Is+kT/qlnI2/nIs+I2R2 =kT/qlnI1/Is+kT/qlnI2/Is ……(1) (但し、k:ボルツマン定数 T:絶対温度 q:電荷 Is:飽和電流) 上記第(1)式から I2=1/R2kT/qlnn ……(2) が得られる。
In the figure, it is assumed that the emitter areas of transistors Q 1 , Q 2 , and Q 3 are the same and the unit is 1, whereas the emitter area of transistor Q 4 is set to n times the unit of n, and the current amplification factor of the transistor is Make it large. In this case, transistors Q 1 , Q 4 ,
Considering the circuit passing through resistor R 2 and the circuit passing through transistors Q 3 and Q 2 , the following equation holds true. That is, kT/qlnI 1 /Is+kT/qlnI 2 /nIs+I 2 R 2 =kT/qlnI 1 /Is+kT/qlnI 2 /Is...(1) (where, k: Boltzmann's constant T: Absolute temperature q: Charge Is: Saturation Current) From the above equation (1), I 2 = 1/R 2 kT/qlnn (2) is obtained.

ここで、通常のモノリシツクICにおける拡散
抵抗の温度係数は、+0.2〔%/C゜〕前後であるが、
(2)式の分子kTの温度係数は、これより大きいた
め、本発明にいう第2回路を通る電流I2は正の温
度係数を有するものである。
Here, the temperature coefficient of diffusion resistance in a normal monolithic IC is around +0.2 [%/C°],
Since the temperature coefficient of the numerator kT in equation (2) is larger than this, the current I 2 passing through the second circuit according to the present invention has a positive temperature coefficient.

一方、本発明にいう第1回路を通る電流I3は、 I3=VBE2+VBE3−VBE5/R3 ……(3) で与えられ、上記電流I3は近似的に I3≒VBE/R3 ……(4) となる。ここで上記電圧VBEは負の温度係数を有
することから、上記電流I3は負の温度係数とな
る。
On the other hand, the current I 3 passing through the first circuit according to the present invention is given by I 3 =V BE2 +V BE3 −V BE5 /R 3 (3), and the above current I 3 is approximately I 3 ≒V BE /R 3 ...(4). Here, since the voltage V BE has a negative temperature coefficient, the current I 3 has a negative temperature coefficient.

これらのことから、上記電流I0は I0=I2+I3 ……(5) で与えられることから、電流I2と電流I3との割合
を適宜選択することによつて、電流I0の温度係数
を、零を中間として正または負の両方向に比較的
簡単に任意に設定可能である。
From these facts, the current I 0 is given by I 0 = I 2 + I 3 (5), so by appropriately selecting the ratio of the current I 2 and the current I 3 , the current I 0 It is possible to arbitrarily set the temperature coefficient in both positive and negative directions with zero as the intermediate value.

また、上記第2式から、電流I2の値は電源電圧
Vccに無関係に設定できる。また電流I3も、トラ
ンジスタQ1のベース・エミツタ電圧VBE1が電源
電圧Vccに依存する電流I1によつて僅かに変化す
るものの変化率は僅少であるために、得るべき所
望の定電流I0に対する電源電圧Vccの影響は少な
い。このために、安定な定電流I0を得ることが可
能となる。
Also, from the second equation above, the value of current I 2 is the power supply voltage
Can be set regardless of Vcc. In addition, the current I 3 is also the same as the desired constant current I 3 because although the base-emitter voltage V BE1 of the transistor Q 1 changes slightly depending on the current I 1 depending on the power supply voltage Vcc, the rate of change is small. The influence of power supply voltage Vcc on 0 is small. For this reason, it becomes possible to obtain a stable constant current I 0 .

(E) 発明の効果 以上説明した如く、本発明によれば、得るべき
定電流I0の温度係数を任意所望に選ぶことが可能
であり、また当該定電流I0の電源電圧Vccの影響
を殆んど受けないものとなる。
(E) Effects of the Invention As explained above, according to the present invention, it is possible to arbitrarily select the temperature coefficient of the constant current I 0 to be obtained, and the influence of the power supply voltage Vcc on the constant current I 0 can be reduced. It will almost never be accepted.

【図面の簡単な説明】[Brief explanation of the drawing]

図は本発明の一実施例構成を示す。 図中、Q1,Q2,Q3,Q5は夫々トランジスタ、
Q4はエミツタ面積n倍のTr,I0は得るべき定電
流、I5は第1回路を通る電流、I2は第2回路を通
る電流、I1は制御回路を通る電流、Vccは電源電
圧を示す。
The figure shows the configuration of an embodiment of the present invention. In the figure, Q 1 , Q 2 , Q 3 , and Q 5 are transistors, respectively.
Q 4 is a Tr with n times the emitter area, I 0 is the constant current to be obtained, I 5 is the current passing through the first circuit, I 2 is the current passing through the second circuit, I 1 is the current passing through the control circuit, and Vcc is the power supply. Indicates voltage.

Claims (1)

【特許請求の範囲】[Claims] 1 電源と接地間に直列に接続された第1、第2
のトランジスタと、出力端と接地間に直列に接続
された第3、第4のトランジスタとを具備し、該
第1のトランジスタのコレクタとベースが該第3
のトランジスタのベースに共通接続され、該第2
のトランジスタと第4のトランジスタのコレクタ
とベースが交差接続され、第4のトランジスタの
エミツタ面積が第2のトランジスタのn倍で、該
出力端と接地間に抵抗と直列に接続され且つその
ベースが該第3のトランジスタのベースに接続さ
れた第5のトランジスタを具備し、該出力端を定
電流源とすることを特徴とする定電流回路。
1 First and second connected in series between power supply and ground
, and third and fourth transistors connected in series between the output terminal and ground, the collector and base of the first transistor being connected to the third transistor.
are commonly connected to the bases of the transistors of the second transistor.
The collectors and bases of the transistor and the fourth transistor are cross-connected, the emitter area of the fourth transistor is n times that of the second transistor, the resistor is connected in series between the output terminal and the ground, and the base thereof is A constant current circuit comprising a fifth transistor connected to the base of the third transistor, the output end serving as a constant current source.
JP58206563A 1983-11-02 1983-11-02 Constant current circuit Granted JPS6097708A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58206563A JPS6097708A (en) 1983-11-02 1983-11-02 Constant current circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58206563A JPS6097708A (en) 1983-11-02 1983-11-02 Constant current circuit

Publications (2)

Publication Number Publication Date
JPS6097708A JPS6097708A (en) 1985-05-31
JPH0518288B2 true JPH0518288B2 (en) 1993-03-11

Family

ID=16525462

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58206563A Granted JPS6097708A (en) 1983-11-02 1983-11-02 Constant current circuit

Country Status (1)

Country Link
JP (1) JPS6097708A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6224708A (en) * 1985-07-25 1987-02-02 Fujitsu Ltd Constant current circuit
JPH0693582B2 (en) * 1988-04-28 1994-11-16 日本電信電話株式会社 Current source circuit
US5091701A (en) * 1990-10-15 1992-02-25 Analog Devices, Inc. High efficiency cross-coupled folded cascode circuit

Also Published As

Publication number Publication date
JPS6097708A (en) 1985-05-31

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