JPH05178685A - Floating zone melting device - Google Patents

Floating zone melting device

Info

Publication number
JPH05178685A
JPH05178685A JP34704091A JP34704091A JPH05178685A JP H05178685 A JPH05178685 A JP H05178685A JP 34704091 A JP34704091 A JP 34704091A JP 34704091 A JP34704091 A JP 34704091A JP H05178685 A JPH05178685 A JP H05178685A
Authority
JP
Japan
Prior art keywords
shape
lamp
floating zone
spheroidal
zone melting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP34704091A
Other languages
Japanese (ja)
Inventor
Isamu Shindo
勇 進藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASUKARU KK
TSUKUBA ASGAL KK
Original Assignee
ASUKARU KK
TSUKUBA ASGAL KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASUKARU KK, TSUKUBA ASGAL KK filed Critical ASUKARU KK
Priority to JP34704091A priority Critical patent/JPH05178685A/en
Publication of JPH05178685A publication Critical patent/JPH05178685A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16Heating of the molten zone
    • C30B13/22Heating of the molten zone by irradiation or electric discharge
    • C30B13/24Heating of the molten zone by irradiation or electric discharge using electromagnetic waves

Abstract

PURPOSE:To greatly improve the temp. distribution within a horizontal plane and to enable the growth of a good-quality large-sized single crystal by changing the shape of a reflection mirror of ellipsoidal surface of revolution in a radiation concentration heater of the optical floating zone melting device into a specific shape. CONSTITUTION:An IR lamp 1 is provided on one focus of the reflection mirror 2 of ellipsoidal surface of revolution having the reflection surface on its inside surface and a melting part 3 on the other focus. The radiations reflected from the reflection surface are concentrated to this melting part to melt the part. The reflection mirror 2 of the such heater is made to the shape in which the sectional shape has the shape of ellipsoidal surface of revolution and the entire part has the annular shape. After a raw material bar 4, a seed crystal 5 and a quartz mirror 6 are set, the lamp 1 is lighted and while the bar 4 and the seed crystal 4 are rotated, the voltage impressed to the lamp is gradually increased to melt the front end of the raw material bar 4. The bar 4 and the seed crystal 5 are thereafter brought near to each other until both are joined via the melting part 3. The bar 4 and the seed crystal 6 are slowly moved downward at a prescribed speed while the voltage impressed to the lamp is adjusted, by which the bar-shaped single crystal is grown.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は、ハロゲンランプ等の
赤外線ランプから発せられる赤外線を回転楕円面反射鏡
を用いてその輻射線として集中し、高温を得て、単結晶
の育成、もしくは、相平衡の研究等に使用するのに有用
な、いわゆる輻射線集中加熱装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention concentrates infrared rays emitted from an infrared lamp such as a halogen lamp as its radiant rays by using a spheroidal reflector to obtain a high temperature to grow a single crystal or a phase. The present invention relates to a so-called concentrated radiation heating device useful for equilibrium research and the like.

【0002】[0002]

【従来の技術とその課題】従来より、単結晶の育成、相
平衡の研究等の分野においては、輻射線集中加熱装置が
よく知られており、この輻射線集中加熱装置は、(1)
坩堝を使用せずに、試料の溶融が行えること、(2)雰
囲気ガスを任意に選べること、(3)浮遊帯域法を利用
して、種々の組成の単結晶育成が容易に行えること、
(4)浮遊帯域徐冷法による相平衡研究が行えること、
(5)比較的少ない電力で高温度が容易に得られるこ
と、等の利点があり、単結晶の育成、相平衡の研究装置
等に広く利用されるようになってきている。
2. Description of the Related Art Conventionally, a radiation concentrated heating apparatus has been well known in the fields of single crystal growth, phase equilibrium research, and the like.
The sample can be melted without using a crucible, (2) the atmosphere gas can be arbitrarily selected, (3) the single crystal growth of various compositions can be easily performed by using the floating zone method,
(4) Performing phase equilibrium studies by the floating zone annealing method,
(5) It has advantages such as high temperature can be easily obtained with relatively little electric power, and it has been widely used in a research apparatus for growing single crystals and phase equilibrium.

【0003】また、最近、新しい酸化物超電導体が発見
され、研究が盛んに行われているが、この場合にも物質
の本性を明らかにするために単結晶の育成が望まれてお
り、浮遊帯域溶融装置を用いて一部の物質においては大
型の単結晶育成に成功してもいる。しかしながら、イッ
トリウム、およびビスマスを含む一連の酸化物超電導体
単結晶の育成は困難とされ、微小結晶は合成されている
ものの、本格的な物性測定に耐えられる程度の大型の単
結晶育成に関しては、いまだその成功例は無い。
Recently, a new oxide superconductor has been discovered and research is actively conducted. In this case as well, growth of a single crystal is desired in order to clarify the nature of the substance, and floating is required. We have succeeded in growing large single crystals of some substances using a zone melting device. However, it is difficult to grow a series of oxide superconductor single crystals containing yttrium and bismuth, and although fine crystals have been synthesized, with regard to large single crystal growth that can withstand full-scale physical property measurement, There is no success case yet.

【0004】従来の赤外線集中加熱式浮遊帯域溶融装置
は、回転楕円面反射鏡を一個ないし二個(場合によって
は四個の例もある)使用し、これを用いてハロゲンラン
プもしくはキセノンランプの光を焦点位置に集め、高温
を得て単結晶育成等を行わせるものであり、回転楕円面
反射鏡を一個用いる場合には、回転楕円面反射鏡の二つ
の焦点の片方の位置にランプを設け、残りの焦点位置に
溶融されるべき試料が設けられるように設計されてい
る。二つの回転楕円面反射鏡を用いる場合にも基本的に
は一つの場合と同様に配置されるが、この場合には、二
つの回転楕円面反射鏡の長軸方向を同じ線上に配置し、
試料が設けられるべき焦点を一点に共有させることで、
二つのランプの光を同じ位置に集め、試料の溶融を行う
ように設計されている。
A conventional infrared concentrated heating type floating zone melting apparatus uses one or two spheroidal reflecting mirrors (in some cases, there are four), and by using this, the light of a halogen lamp or a xenon lamp is used. Is focused at a focus position to obtain a high temperature to grow a single crystal.When one spheroidal reflector is used, a lamp is provided at one of the two focal points of the spheroidal reflector. , Is designed to provide the sample to be melted at the remaining focus positions. When two spheroidal reflectors are used, they are basically arranged in the same manner as in one case, but in this case, the major axis directions of the two spheroidal mirrors are arranged on the same line,
By sharing the focal point where the sample should be provided,
It is designed to collect the light of two lamps at the same position to melt the sample.

【0005】以上のように設計された従来の浮遊帯域溶
融装置においては、比較的高い集光効率が達成でき、比
較的高温が容易に得られる利点があるため、多くの酸化
物系もしくは、金属間化合物の研究などに使用されてき
ている。しかしながら、上記の浮遊帯域溶融装置におい
ては、回転楕円面反射鏡を用いている関係上、理論的に
は試料の水平面内の温度分布は一定になるはずである
が、実際にはランプのフィラメントの形状効果、ランプ
そのものの形状効果などがあり、単結晶育成にとって最
も重要な水平面内の温度分布は一定にはならない。この
ため、回転を加えて温度分布の改善を図っているのが実
情である。そして、上記の酸化物超電導体などの場合の
ように、極めて厳密に制御された温度分布を必要とさせ
る系の場合などでは、この温度分布の不均一性によっ
て、たとえ回転を加えても、良質の大型単結晶を育成す
ることは極めて困難であるという欠点があった。
The conventional floating zone melting apparatus designed as described above has the advantages that a relatively high light collection efficiency can be achieved and a relatively high temperature can be easily obtained. It has been used for research on intermetallic compounds. However, in the above floating zone melting apparatus, theoretically the temperature distribution in the horizontal plane of the sample should be constant due to the use of the spheroidal reflector, but in reality, the filament of the lamp Due to the shape effect and the shape effect of the lamp itself, the temperature distribution in the horizontal plane, which is the most important for single crystal growth, is not constant. For this reason, the reality is that rotation is added to improve the temperature distribution. And in the case of a system that requires a very strictly controlled temperature distribution, such as the case of the above oxide superconductor, due to the nonuniformity of this temperature distribution, even if rotation is performed, a high quality is obtained. However, it is extremely difficult to grow the large single crystal.

【0006】この発明は、以上のような従来の光学式浮
遊帯域溶融装置の問題点を解決しようとするものであっ
て、水平面内の温度分布を大幅に改善できる新しい光学
式浮遊帯域溶融装置を提供することを目的としている。
The present invention is intended to solve the above-mentioned problems of the conventional optical floating zone melting apparatus, and provides a new optical floating zone melting apparatus capable of greatly improving the temperature distribution in the horizontal plane. It is intended to be provided.

【0007】[0007]

【課題を解決するための手段】この発明は、上記の課題
を解決するものとして、回転楕円面反射鏡の形状を変
え、水平面内の温度分布を改善できるようにしたもので
あって、内面を反射面とした回転楕円面反射鏡の一方の
焦点に赤外線ランプを設け、他方の焦点上に反射面から
反射した輻射線を集中して加熱する方式の輻射線集中加
熱装置において、回転楕円面反射鏡が、その断面として
回転楕円面の形状を有し、かつ、全体はリング状となる
特殊形状からなることを特徴とする光学式浮遊帯域溶融
装置を提供するものである。
In order to solve the above-mentioned problems, the present invention is to change the shape of a spheroidal reflecting mirror so as to improve the temperature distribution in a horizontal plane. An infrared lamp is installed at one of the focal points of the spheroidal reflecting mirror that is used as a reflecting surface, and the radiant rays reflected from the reflecting surface are concentrated and heated on the other focal point. The present invention provides an optical floating zone melting apparatus, characterized in that the mirror has a spheroidal shape in its cross section and has a special shape which is entirely ring-shaped.

【0008】また、この発明は、さらにその細部の構成
において改良を加えたものでもある。以下、添付した図
面に沿ってこの発明の装置をさらに詳しく説明する。
The present invention is also an improvement in the detailed structure thereof. Hereinafter, the device of the present invention will be described in more detail with reference to the accompanying drawings.

【0009】[0009]

【実施例】図1および図2は、この発明による赤外線集
中加熱式浮遊帯域溶融装置の概念を示した正面図および
側面図であり、図3は、主要部の拡大図である。この図
1および図2において、1はハロゲンランプ、2は楕円
面反射鏡、3はランプの光が集中する点で、試料の溶融
部に当たる。4は原料棒、5は育成された結晶、6は試
料室を形成する透明石英管、7は原料棒支持部、8は育
成結晶支持部、9は原料棒支持シャフト駆動部、10は
育成結晶支持シャフト駆動部、11は、装置架台であ
る。この装置において、まず原料棒支持部に原料棒4
を、育成結晶支持部に種子結晶5をセットし、石英管6
をセットしてからランプ1を点灯し、上下の駆動部9,
10によって、原料棒、種子棒に回転を与えながら、徐
々にランプへの印加電圧を上昇させ、原料棒4の先端部
を溶かす。原料棒4の先端が溶けたら、駆動装置9,1
0を動かして原料棒と種子棒とを接近させ両者を溶融部
を介して接合させる。溶融部は、その表面張力によって
落下しないように保持されている。ランプ印加電圧を調
節しながら上下の駆動部9,10を用いて、原料棒、種
子棒を同じ速度でゆっくりと所定の速度で下方に移動さ
せると原料棒の溶解、種子棒上への結晶の育成が継続さ
れ、棒状単結晶の育成が行われる。
1 and 2 are a front view and a side view showing the concept of an infrared concentrated heating type floating zone melting apparatus according to the present invention, and FIG. 3 is an enlarged view of a main part. In FIGS. 1 and 2, 1 is a halogen lamp, 2 is an elliptical reflecting mirror, and 3 is the point where the light of the lamp is concentrated, which corresponds to the melting portion of the sample. Reference numeral 4 is a raw material rod, 5 is a grown crystal, 6 is a transparent quartz tube forming a sample chamber, 7 is a raw material rod supporting portion, 8 is a grown crystal supporting portion, 9 is a raw material rod supporting shaft drive portion, and 10 is a grown crystal. The support shaft drive unit 11 is a device stand. In this apparatus, the raw material rod 4 is first attached to the raw material rod supporting portion.
The seed crystal 5 is set on the growing crystal support part, and the quartz tube 6
After turning on the lamp 1, turn on the lamp 1,
With 10, the voltage applied to the lamp is gradually increased while rotating the raw material rod and the seed rod, and the tip portion of the raw material rod 4 is melted. When the tip of the raw material rod 4 is melted, the driving device 9, 1
By moving 0, the raw material rod and the seed rod are brought close to each other, and both are joined via the fusion zone. The fusion zone is held by its surface tension so as not to fall. Using the upper and lower driving units 9 and 10 while adjusting the voltage applied to the lamp, when the raw material rod and the seed rod are slowly moved downward at the same speed and at a predetermined speed, the raw material rod is melted and the crystals on the seed rod are melted. The growth is continued and the rod-shaped single crystal is grown.

【0010】この時、従来装置のように、水平面内の温
度分布が悪いと、いくら育成結晶駆動シャフト10を回
転させても、温度の不均一な部分を通過するにつれて、
結晶は育成と溶解が交互に繰り返されることになり、良
質の単結晶は育成されない。しかしながら、この発明に
よれば、図3にも拡大して示したように、内面を反射面
とした回転楕円面反射鏡2の一方の焦点に赤外線ランプ
1を設け、他方の焦点上に溶融部3を設け、これに反射
面から反射した輻射線を集中して加熱する方式の輻射線
集中加熱装置において、回転楕円面反射鏡2が、その断
面として回転楕円面形状を有し、かつ、全体はリング状
となる特殊形状としているため、水平面内の温度分布は
単結晶育成に関してほぼ理想的になっており、これによ
り、良質な単結晶が育成できる。
At this time, if the temperature distribution in the horizontal plane is poor as in the conventional apparatus, no matter how much the growth crystal drive shaft 10 is rotated, as it passes through the nonuniform temperature portion,
Growth and dissolution of crystals are alternately repeated, and good quality single crystals are not grown. However, according to the present invention, as shown in FIG. 3 in an enlarged manner, the infrared lamp 1 is provided at one focus of the spheroidal reflecting mirror 2 having an inner surface as a reflecting surface, and the melting portion is provided at the other focus. In the radiant ray concentrated heating device of the type in which 3 is provided and the radiation reflected from the reflecting surface is concentrated and heated, the spheroidal reflecting mirror 2 has a spheroidal shape as its cross section, and Has a ring-shaped special shape, the temperature distribution in the horizontal plane is almost ideal for growing a single crystal, and thus a good-quality single crystal can be grown.

【0011】さらに、この発明による新しい浮遊帯域溶
融装置の特徴の他の一つは、ハロゲンランプの集光効率
が格段に向上し、そのために被加熱物の温度勾配が急峻
となるために、大口径単結晶の育成にとって最も肝要で
あるとされる融液の落下が生じ難くなるという利点であ
る。従来の浮遊帯域溶融法は、形成された融液を試料自
身に保持させる方法であるから、融液の表面張力と融液
の比重の相関関係によって安定に保持できる融液の量は
制限されてしまい、大口径単結晶の育成には困難が伴う
欠点があった。しかしながら、この発明の装置を使用す
ることにより、従来よりもはるかに大口径の大型単結晶
が育成出来るようになる。生産用装置としての活用も広
がる。
Further, another one of the features of the new floating zone melting apparatus according to the present invention is that the condensing efficiency of the halogen lamp is remarkably improved, and therefore the temperature gradient of the object to be heated becomes steep. This is an advantage that the falling of the melt, which is the most important for growing a single crystal with a diameter, is unlikely to occur. Since the conventional floating zone melting method is a method of holding the formed melt on the sample itself, the amount of the melt that can be stably held is limited by the correlation between the surface tension of the melt and the specific gravity of the melt. However, there is a drawback in that it is difficult to grow a large-diameter single crystal. However, by using the device of the present invention, it becomes possible to grow a large single crystal having a much larger diameter than ever before. Utilization as a production device will also expand.

【0012】[0012]

【発明の効果】この発明により、以上詳しく説明した通
り、良質の単結晶の育成と、大口径単結晶の育成が可能
となる。
As described in detail above, according to the present invention, it becomes possible to grow a good quality single crystal and a large diameter single crystal.

【図面の簡単な説明】[Brief description of drawings]

【図1】この発明の一例を示した正面図である。FIG. 1 is a front view showing an example of the present invention.

【図2】図1に対応する側面図である。FIG. 2 is a side view corresponding to FIG.

【図3】この発明の装置の要部拡大図である。FIG. 3 is an enlarged view of a main part of the device according to the present invention.

【符号の説明】[Explanation of symbols]

1 赤外線ランプ 2 楕円面反射鏡 3 溶融部 4 原料棒 5 種子結晶,育成結晶 6 透明石英管 7,8 シャフト支持部 9,10 シャフト駆動部 11 装置架台 1 Infrared Lamp 2 Ellipsoidal Reflector 3 Melting Part 4 Raw Material Bar 5 Seed Crystal, Growth Crystal 6 Transparent Quartz Tube 7,8 Shaft Support 9,10 Shaft Drive 11 Device Stand

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】 内面を反射面とした回転楕円面反射鏡の
一方の焦点に赤外線ランプを設け、他方の焦点上に反射
面から反射した輻射線を集中して加熱する方式の輻射線
集中加熱装置において、回転楕円面反射鏡が、その断面
として回転楕円面形状を有し、かつ、全体はリング状と
なる特殊形状からなることを特徴とする光学式浮遊帯域
溶融装置。
1. Radiant concentrated heating of a system in which an infrared lamp is provided at one focus of a spheroidal reflecting mirror having an inner surface as a reflective surface, and the radiation reflected from the reflective surface is concentrated and heated on the other focus. In the apparatus, an optical floating zone melting apparatus, wherein the spheroidal reflecting mirror has a spheroidal shape as its cross section and has a special shape in which the whole is ring-shaped.
【請求項2】 回転楕円面反射鏡を上下二つに分割でき
る構造にしたことを特徴とする請求項1の浮遊帯域溶融
装置。
2. The floating zone melting apparatus according to claim 1, wherein the spheroidal reflecting mirror has a structure capable of being divided into upper and lower parts.
【請求項3】 水平面に置かれた回転楕円面反射鏡を縦
に3個以上に分割し、それぞれの回転楕円面反射鏡の分
割線の第二焦点を上下に移動できる機構を付加したこと
を特徴する請求項1の浮遊帯域溶融装置。
3. A spheroidal reflector placed on a horizontal plane is vertically divided into three or more parts, and a mechanism for moving the second focus of the dividing line of each spheroidal reflector vertically is added. The floating zone melting apparatus of claim 1 characterized.
【請求項4】 使用するハロゲンランプのフィラメント
形状において、フィラメントを単線もしくはこれを螺旋
状に成形したものを使用することを特徴とする請求項1
の浮遊帯域溶融装置。
4. The filament shape of the halogen lamp to be used is characterized in that a filament is formed into a single wire or a spiral shape.
Floating zone melting equipment.
【請求項5】 回転楕円面反射鏡内部に冷却空気を導入
する機構を有することを特徴とする請求項1の浮遊帯域
溶融装置
5. The floating zone melting apparatus according to claim 1, further comprising a mechanism for introducing cooling air into the spheroidal reflector.
【請求項6】 回転楕円面反射鏡内部に冷却空気を導入
する機構を有することを特徴とする請求項1の浮遊帯域
溶融装置。
6. The floating zone melting apparatus according to claim 1, further comprising a mechanism for introducing cooling air into the spheroidal reflecting mirror.
JP34704091A 1991-12-27 1991-12-27 Floating zone melting device Pending JPH05178685A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP34704091A JPH05178685A (en) 1991-12-27 1991-12-27 Floating zone melting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34704091A JPH05178685A (en) 1991-12-27 1991-12-27 Floating zone melting device

Publications (1)

Publication Number Publication Date
JPH05178685A true JPH05178685A (en) 1993-07-20

Family

ID=18387518

Family Applications (1)

Application Number Title Priority Date Filing Date
JP34704091A Pending JPH05178685A (en) 1991-12-27 1991-12-27 Floating zone melting device

Country Status (1)

Country Link
JP (1) JPH05178685A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005075713A1 (en) * 2004-02-05 2005-08-18 Nec Machinery Corporation Single crystal growing apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005075713A1 (en) * 2004-02-05 2005-08-18 Nec Machinery Corporation Single crystal growing apparatus
JPWO2005075713A1 (en) * 2004-02-05 2008-01-10 独立行政法人産業技術総合研究所 Single crystal growth equipment
JP4849597B2 (en) * 2004-02-05 2012-01-11 独立行政法人産業技術総合研究所 Single crystal growth equipment

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