JPH051747B2 - - Google Patents
Info
- Publication number
- JPH051747B2 JPH051747B2 JP61101370A JP10137086A JPH051747B2 JP H051747 B2 JPH051747 B2 JP H051747B2 JP 61101370 A JP61101370 A JP 61101370A JP 10137086 A JP10137086 A JP 10137086A JP H051747 B2 JPH051747 B2 JP H051747B2
- Authority
- JP
- Japan
- Prior art keywords
- recording
- selenium
- nitrogen
- tellurium
- optical recording
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- 230000003287 optical effect Effects 0.000 claims description 13
- 229910052714 tellurium Inorganic materials 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 9
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 9
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 6
- 229910052711 selenium Inorganic materials 0.000 claims description 6
- 239000011669 selenium Substances 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052793 cadmium Inorganic materials 0.000 claims description 4
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 239000011777 magnesium Substances 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- 229910052716 thallium Inorganic materials 0.000 claims description 4
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 239000011701 zinc Substances 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 description 8
- 229910001370 Se alloy Inorganic materials 0.000 description 5
- -1 tellurium selenium alloy Chemical class 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052798 chalcogen Inorganic materials 0.000 description 1
- 150000001787 chalcogens Chemical class 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000011116 polymethylpentene Substances 0.000 description 1
- 229920000306 polymethylpentene Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24316—Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24318—Non-metallic elements
- G11B2007/24322—Nitrogen
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
- G11B7/2531—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising glass
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
- G11B7/2533—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising resins
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は半導体レーザ光によつて情報を記録再
生することのできる光記録媒体に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an optical recording medium on which information can be recorded and reproduced using semiconductor laser light.
（従来の技術）
レーザ光によつて情報を媒体に記録し、かつ再
生する光デイスクメモリは、記録密度が高いこと
から大容量記録装置として優れた特徴を有してい
る。この光記録媒体材料としては、Te等のカル
コゲン元素又はこれらの化合物が使用されている
（特公昭47−26897）。とくにテルルセレン系合金
はよく使用されている（特公昭54−41902、特公
昭57−7919、特公昭57−56058）。近年、記録装置
を小型化するため、レーザ光源としては半導体レ
ーザが使用されてきている。半導体レーザは発振
波長が8000Å前後であるが、テルルセレン系合金
はこの波長帯にも比較的よく適合し、適度な反射
率と適度な吸収率が得られる（フイジカ・ステイ
タス・ソリダイ（phys.sata.sol.7，1891，964））。(Prior Art) Optical disk memories, which record and reproduce information on a medium using laser light, have excellent characteristics as large-capacity recording devices because of their high recording density. As materials for this optical recording medium, chalcogen elements such as Te or compounds thereof are used (Japanese Patent Publication No. 47-26897). In particular, tellurium selenium alloys are often used (Japanese Patent Publication No. 54-41902, Japanese Patent Publication No. 57-7919, Japanese Patent Publication No. 57-56058). In recent years, in order to downsize recording devices, semiconductor lasers have been used as laser light sources. Semiconductor lasers have an oscillation wavelength of around 8000 Å, and tellurium selenium alloys are relatively well suited to this wavelength range, and can provide moderate reflectance and moderate absorption (Physica Status Solidi). sol.7, 1891, 964)).
（発明が解決しようとする問題点）
しかしながら、これらの媒体で信号品質が充分
に良好でかつ半導体レーザ記録に適するものはな
かつた。本発明の目的は、耐候性がよくかつ信号
品質が充分に良好でありかつ半導体レーザ記録に
適する光記録媒体を提供することにある。(Problems to be Solved by the Invention) However, none of these media has sufficiently good signal quality and is suitable for semiconductor laser recording. An object of the present invention is to provide an optical recording medium that has good weather resistance, sufficiently good signal quality, and is suitable for semiconductor laser recording.
（問題を解決するための手段）
本発明の光記録媒体は情報を半導体レーザ光に
よつて記録しかつ読み取る光記録媒体であつて、
記録層がテルルと、セレンと、窒素に加えて、
鉛、ヒ素、スズ、ゲルマニウム、カドミウム、タ
リウム、リン、インジウム、ガリウム、亜鉛、ア
ルミニウム、銅、銀、マグネシウム、タンタル、
金、パラジウムからなる群から選ばれた少なくと
も１種の元素からなることを特徴とする。(Means for solving the problem) The optical recording medium of the present invention is an optical recording medium in which information is recorded and read by semiconductor laser light, and includes:
In addition to tellurium, selenium, and nitrogen, the recording layer
Lead, arsenic, tin, germanium, cadmium, thallium, phosphorus, indium, gallium, zinc, aluminum, copper, silver, magnesium, tantalum,
It is characterized by comprising at least one element selected from the group consisting of gold and palladium.
（作用）
光記録媒体は第１図のような構成になつてい
る。即ち、基板１の上に記録層２１が設けられて
いる。記録用レーザ光は基板１を通して記録層２
１に集光照射され、ピツト２２が形成される。基
板１としてはポリカーボネイト、ポリオレフイ
ン、ポリメチルペンテン、アクリル、エポキシ樹
脂等の合成樹脂やガラスが使用される。基板には
ピツトが同心円状あるいはスパイラル状に一定間
隔で精度よく記録されるように案内溝が設けられ
ている。レーザビーム径程度の幅の溝に光が入射
すると光は回折され、ビーム中心が溝からずれる
につれて回折光強度の空間分布が変化するので、
これを検出してレーザビームを溝の中心に入射さ
せるようにサーボ系が構成されている。溝の幅は
通常0.3〜1.3umであり、溝の深さは使用するレー
ザ波長の１／12から１／４の範囲に設定されてい
る。集光に関しても同様にサーボ系が構成されて
いる。情報の読み出しは、記録のときよりも弱い
パワーのレーザ光をピツト上を通過するように照
射することにより、ピツトの有無に起因する反射
率の変化を検出して行なう。記録層２１としては
種々の材料を使用できるが、耐候性を考慮すると
テルルセレン系合金膜が望ましい。しかしなが
ら、テルルセレン合金では信号品質が充分に良好
ではなかつた。本発明者らは記録層をテルルとセ
レンと窒素とすることにより、耐候性が良好なま
ま、信号品質が良好となることを見出したが、本
発明はこれをさらに改善したものであり、テルル
とセレンと窒素に加えて、鉛、ヒ素、スズ、ゲル
マニウム、カドミウム、タリウム、リン、インジ
ウム、ガリウム、亜鉛、アルミニウム、銅、銀、
マグネシウム、タンタル、金、パラジウムからな
る群から選ばれた少なくとも１種の元素を添加す
ることによりピツトの形状をさらに良好に整える
ことを見出し、本発明に到つたものである。(Function) The optical recording medium has a structure as shown in FIG. That is, the recording layer 21 is provided on the substrate 1. The recording laser beam passes through the substrate 1 to the recording layer 2.
1 is condensed and irradiated to form a pit 22. As the substrate 1, synthetic resins such as polycarbonate, polyolefin, polymethylpentene, acrylic, and epoxy resins, and glass are used. Guide grooves are provided on the substrate so that pits are recorded concentrically or spirally at regular intervals with high accuracy. When light enters a groove with a width similar to the laser beam diameter, the light is diffracted, and as the beam center shifts from the groove, the spatial distribution of the diffracted light intensity changes.
A servo system is configured to detect this and direct the laser beam to the center of the groove. The width of the groove is usually 0.3 to 1.3 um, and the depth of the groove is set in the range of 1/12 to 1/4 of the laser wavelength used. A servo system is similarly configured for condensing light. Information is read by irradiating a laser beam with a power weaker than that used during recording so as to pass over the pits, and detecting changes in reflectance caused by the presence or absence of pits. Although various materials can be used for the recording layer 21, a tellurium selenium alloy film is preferable in consideration of weather resistance. However, the signal quality of tellurium selenium alloys was not good enough. The present inventors have found that by using tellurium, selenium, and nitrogen in the recording layer, signal quality can be improved while maintaining good weather resistance.The present invention further improves this. In addition to selenium and nitrogen, lead, arsenic, tin, germanium, cadmium, thallium, phosphorus, indium, gallium, zinc, aluminum, copper, silver,
The inventors have discovered that the shape of the pits can be further improved by adding at least one element selected from the group consisting of magnesium, tantalum, gold, and palladium, leading to the present invention.
（実施例） 以下本発明の実施例について説明する。(Example) Examples of the present invention will be described below.
100℃で２時間アニール処理した内径15mm、外
径130mm、厚さ1.2mmのポリカーポネート樹脂デイ
スク基板上に、テルルセレン合金板上に鉛のチツ
プを分散配置したターゲツトをアルゴンと窒素の
混合ガスでスパツタすることによりテルルとセレ
ンと窒素と鉛の比が原子数パーセントで86対４対
６対４のテルルセレン窒素鉛層を約250Å厚形成
した。この光デイスクを95℃の窒素雰囲気中で１
時間アニールしたのち、波長8300Åにおける基板
入射反射率を測定したところ約31％であつた。波
長8300Åの半導体レーザ光を基板を通して入射し
て記録層上で1.6um〓程度に絞り、媒体線速度5.6
ｍ／sec、記録周波数3.77MHz、記録パルス幅
70nsec、記録パワー6.5mWの条件で記録し、
0.7mWで再生した。バンド幅30kHzのキヤリアー
とノイズとの比（Ｃ／Ｎ）は55dBと良好であつ
た。これはピツト形状が良好となつたためであ
る。この光デイスクを70℃80％の高温高湿度の環
境に60時間保存した後、上記特性を調べたが変化
はなく、耐候性に優れた光記録媒体であることが
確認された。 A target consisting of lead chips dispersed on a tellurium selenium alloy plate was placed on a polycarbonate resin disk substrate with an inner diameter of 15 mm, outer diameter of 130 mm, and thickness of 1.2 mm that had been annealed at 100°C for 2 hours, using a mixed gas of argon and nitrogen. By sputtering, a tellurium selenium nitrogen lead layer having a ratio of tellurium to selenium to nitrogen to lead in atomic percent of 86:4:6:4 was formed to a thickness of about 250 Å. This optical disk was placed in a nitrogen atmosphere at 95°C.
After annealing for a period of time, the substrate incident reflectance at a wavelength of 8300 Å was measured and was approximately 31%. Semiconductor laser light with a wavelength of 8300 Å is incident through the substrate and focused to about 1.6 μm on the recording layer, and the linear velocity of the medium is 5.6.
m/sec, recording frequency 3.77MHz, recording pulse width
Recorded under the conditions of 70nsec and recording power 6.5mW,
Played at 0.7mW. The carrier-to-noise ratio (C/N) with a bandwidth of 30 kHz was as good as 55 dB. This is because the pit shape has become better. After this optical disk was stored in a high temperature and high humidity environment of 70°C and 80% for 60 hours, the above characteristics were examined, but there were no changes, confirming that it was an optical recording medium with excellent weather resistance.
同様の方法で、タンタル、スズ、ゲルマニウ
ム、タリウム、イソジウム、亜鉛、アルミニウ
ム、銅、銀、マグネシウム、金、パラジウムを添
加したり、テルル又はセレンとの化合物という形
でヒ素、カドミウム、ガリウムの少なくとも１以
上を添加すると、同様にピツトの形状を良好に整
えること判つた。ただし添加量は原子数パーセン
トで20パーセント未満が記録再生特性、耐候性の
観点から望ましい。 In a similar manner, tantalum, tin, germanium, thallium, isodium, zinc, aluminum, copper, silver, magnesium, gold, palladium may be added, or at least one of arsenic, cadmium, gallium in the form of a compound with tellurium or selenium. It has been found that the addition of the above also improves the shape of the pit. However, the amount added is preferably less than 20% in terms of atomic percent from the viewpoint of recording/reproducing characteristics and weather resistance.
記録層の厚さは80Åから400Åの範囲が記録再
生特性の観点から望ましく、窒素の含有量は原子
数パーセントで２パーセント以上10パーセント以
下の範囲が記録再生特性、耐候性の観点から望ま
しく、セレンの含有量は原子数パーセントで10パ
ーセント以上30パーセント以下の範囲が耐候性の
観点で望ましい。 The thickness of the recording layer is preferably in the range of 80 Å to 400 Å from the viewpoint of recording/reproducing characteristics, and the nitrogen content is preferably in the range of 2% or more and 10% or less in terms of atomic percent from the viewpoint of recording/reproducing characteristics and weather resistance. From the viewpoint of weather resistance, it is desirable that the content be in the range of 10% or more and 30% or less in terms of atomic percent.
（発明の構成）
上記実施例から明らかなように、本発明により
耐候性がよくかつ信号品質が充分に良好で半導体
レーザ記録に適した光記録媒体が得られる。(Structure of the Invention) As is clear from the above embodiments, the present invention provides an optical recording medium that has good weather resistance, sufficiently good signal quality, and is suitable for semiconductor laser recording.
第１図は光記録媒体の一例を示す断面概略図で
ある。図において１は基板、２１は記録層、２２
はピツトを表わす。
FIG. 1 is a schematic cross-sectional view showing an example of an optical recording medium. In the figure, 1 is a substrate, 21 is a recording layer, 22
represents pit.
Claims (1)
み取る光記録媒体において記録層がテルルと、セ
レンと、窒素に加えて、鉛、ヒ素、スズ、ゲルマ
ニウム、カドミウム、タリウム、リン、インジウ
ム、ガリウム、亜鉛、アルミニウム、銅、銀、マ
グネシウム、タンタル、金、パラジウムからなる
群から選ばれた少なくとも１種の元素からなるこ
とを特徴とする光記録媒体。1 In optical recording media that record and read information using semiconductor laser light, the recording layer contains tellurium, selenium, nitrogen, as well as lead, arsenic, tin, germanium, cadmium, thallium, phosphorus, indium, gallium, and zinc. , aluminum, copper, silver, magnesium, tantalum, gold, and palladium.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61101370A JPS62256692A (en) | 1986-04-30 | 1986-04-30 | Optical recording medium |
| US07/043,626 US4839208A (en) | 1986-04-30 | 1987-04-28 | Optical information recording medium |
| EP87106262A EP0243958B1 (en) | 1986-04-30 | 1987-04-29 | Optical information recording medium |
| DE8787106262T DE3781926T2 (en) | 1986-04-30 | 1987-04-29 | MEDIUM FOR OPTICAL INFORMATION RECORDING. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61101370A JPS62256692A (en) | 1986-04-30 | 1986-04-30 | Optical recording medium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62256692A JPS62256692A (en) | 1987-11-09 |
| JPH051747B2 true JPH051747B2 (en) | 1993-01-08 |
Family
ID=14298931
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61101370A Granted JPS62256692A (en) | 1986-04-30 | 1986-04-30 | Optical recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62256692A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7407696B2 (en) * | 2003-01-24 | 2008-08-05 | Board Of Trustees Operating Michigan State University | Phase change materials for storage media |
-
1986
- 1986-04-30 JP JP61101370A patent/JPS62256692A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62256692A (en) | 1987-11-09 |
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|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |