JPS6381091A - Optical recording medium - Google Patents
Optical recording mediumInfo
- Publication number
- JPS6381091A JPS6381091A JP61227652A JP22765286A JPS6381091A JP S6381091 A JPS6381091 A JP S6381091A JP 61227652 A JP61227652 A JP 61227652A JP 22765286 A JP22765286 A JP 22765286A JP S6381091 A JPS6381091 A JP S6381091A
- Authority
- JP
- Japan
- Prior art keywords
- tellurium
- recording
- recording layer
- selenium
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 19
- 229910052714 tellurium Inorganic materials 0.000 claims abstract description 27
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims abstract description 16
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000011669 selenium Substances 0.000 claims abstract description 15
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 14
- -1 tellurium nitride Chemical class 0.000 claims abstract description 12
- 230000035945 sensitivity Effects 0.000 abstract description 13
- 230000015572 biosynthetic process Effects 0.000 abstract description 5
- 230000003993 interaction Effects 0.000 abstract description 3
- 238000002844 melting Methods 0.000 abstract description 2
- 230000008018 melting Effects 0.000 abstract description 2
- 230000002349 favourable effect Effects 0.000 abstract 2
- 239000000470 constituent Substances 0.000 abstract 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 13
- 239000000758 substrate Substances 0.000 description 9
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910001370 Se alloy Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910000978 Pb alloy Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 229910001215 Te alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 241000981595 Zoysia japonica Species 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052798 chalcogen Inorganic materials 0.000 description 1
- 150000001787 chalcogens Chemical class 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000011116 polymethylpentene Substances 0.000 description 1
- 229920000306 polymethylpentene Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 125000003748 selenium group Chemical group *[Se]* 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24316—Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24318—Non-metallic elements
- G11B2007/24322—Nitrogen
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明はレーザ光によって情報を記録再生することので
きる光記録媒体に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an optical recording medium on which information can be recorded and reproduced using laser light.
(従来の技術)
レーザ光によって情報を媒体に記録し、かつ再生する光
デイスクメモリは、記録密度が高いことから大容量記録
装置として優れた特徴を有している。この光記録媒体材
料としては、Te等のカルコゲン元素やこれらの化合物
が使用されている(例えば特公昭47−26897)。(Prior Art) Optical disk memories, which record and reproduce information on a medium using laser light, have excellent characteristics as large-capacity recording devices because of their high recording density. As materials for this optical recording medium, chalcogen elements such as Te and compounds thereof are used (for example, Japanese Patent Publication No. 47-26897).
(発明が解決しようとする問題点)
しかしながら、これらの媒体では、耐候性と感度と信号
品質のすべてを充分に満足するものはなかった。(Problems to be Solved by the Invention) However, none of these media fully satisfies all of the requirements of weather resistance, sensitivity, and signal quality.
本発明の目的は、耐候性が充分によく、かつ高感度で信
号品質の充分に良好で安定な光記録媒体を提供すること
にある。An object of the present invention is to provide a stable optical recording medium with sufficiently good weather resistance, high sensitivity, and sufficiently good signal quality.
(問題を解決するための手段)
本発明の光記録媒体は情報をレーザ光によって記録しか
つ読み取る光記録媒体であって、テルルと窒化テルルと
セレンとを主成分とする結晶質の記録層を有することを
特徴とする。(Means for Solving the Problems) The optical recording medium of the present invention is an optical recording medium in which information is recorded and read by laser light, and includes a crystalline recording layer containing tellurium, tellurium nitride, and selenium as main components. It is characterized by having.
(作用) 光記録媒体は第1図のような構成になっている。(effect) The optical recording medium has a structure as shown in FIG.
即ち、基板1の上に記録層21が設けられている。記録
用レーザ光は基板1を通して記録層21に集光照射され
、ピット22が形成される。基板1としてはポリカーボ
ネイト、ポリオレフィン、ポリメチルペンテン、アクリ
ル、エポキシ樹脂等の合成樹脂やガラスが使用される。That is, the recording layer 21 is provided on the substrate 1. The recording laser beam is focused and irradiated onto the recording layer 21 through the substrate 1, and pits 22 are formed. As the substrate 1, synthetic resins such as polycarbonate, polyolefin, polymethylpentene, acrylic, and epoxy resins, and glass are used.
基板には、ピットが同心円状あるいはスパイラル状に一
定間隔で精度よく記録されるように案内溝が設けられて
いる。レーザビーム径程度の幅の溝に光が入射すると光
は回折され、ビーム中心が溝からずれるにつれて回折光
強度の空間分布が変化するので、これを検出してレーザ
ビームを溝の中心に入射させるようにサーボ系が構成さ
れている。溝の幅は通常0.3〜1.311mであり、
溝の深さは使用するレーザ波長の1112から174の
範囲に設定される。集光に関しても同様にサーボ系が構
成されいる。情報の読み出しは、記録のときよりも弱い
パワーのレーザ光をピット上を通過するように照射する
ことにより、ピットの有無に起因する反射率の変化を検
出して行なう。Guide grooves are provided on the substrate so that pits are recorded concentrically or spirally at regular intervals with high accuracy. When light enters a groove with a width similar to the diameter of the laser beam, the light is diffracted, and as the beam center shifts from the groove, the spatial distribution of the intensity of the diffracted light changes.This is detected and the laser beam is directed to the center of the groove. The servo system is configured as follows. The width of the groove is usually 0.3 to 1.311 m,
The depth of the groove is set within the range of 1112 to 174 wavelengths of the laser used. A servo system is similarly configured for condensing light. Information is read by irradiating a laser beam with a weaker power than during recording so as to pass over the pits, and detecting changes in reflectance due to the presence or absence of pits.
記録層21としては種々の材料を使用できる。その中で
もテルルは比較的記録再生特性が良好である。しかしな
がら高温高温環境における酸化劣化がはげしいので実用
には供せなかった。又、感度的にもやや不足であった。Various materials can be used for the recording layer 21. Among them, tellurium has relatively good recording and reproducing properties. However, it could not be put to practical use because of severe oxidative deterioration in high-temperature environments. Also, the sensitivity was somewhat insufficient.
感度不足を解決する1つとして、加熱時に窒素が遊離し
て高感度化するようにテルル膜に窒素を含ませることが
提案されている(特開昭57−58250)。本発明者
らはこの実施例を追試して光記録媒体を作製し記録再生
特性を評価したところ、本発明者らが目的とする小型大
容量記録装置の光源である半導体レーザ波長(およそ8
300A)ではほとんど吸収がないため感度不足であっ
た。又、窒素が遊離しやすいため、高温高温環境におけ
る保存性が充分ではなかった。又、上記提案のように窒
素ガス中でスパッタリングして成膜するのではなく、ア
ルゴンと窒素との混合ガス中でスパッタリングして成膜
するということも提案されている(アプライド・フィジ
ックス・レターズ(Appl、Phys、Lett、4
5,202.1984))。しかしながら、これでもま
だ充分な記録感度ではなかった。本発明者らは記録層を
テルルと窒化テルルとセレンとを主成分とする結晶質と
することにより、高感度でかつ耐候性のよい光記録媒体
となりしかも信号品質が良好でかつ安定に得られること
を見出し、本発明に到ったものである。本記録層が高感
度でかつ耐候性がよくかつ信号品質が良好で安定である
理由は明確ではないが、セレンを入れることで系全体の
融点が低下したことと層を結晶質にしたことで孔形成の
初期段階である小穴の形成が比較的低い温度で生じるよ
うになったために高感度化したと思われ、テルルと窒化
テルルとセレンとの相互作用が好都合に作用して耐候性
が向上したものと思われ、テルルと窒化テルルとセレン
との相互作用と結晶質であることが好都合に作用して信
号品質が良好で安定に得られるものと思われる。As one solution to the lack of sensitivity, it has been proposed to include nitrogen in the tellurium film so that nitrogen is liberated during heating and increases the sensitivity (Japanese Patent Laid-Open No. 57-58250). The present inventors repeated this example, fabricated an optical recording medium, and evaluated the recording and reproducing characteristics, and found that the semiconductor laser wavelength (approximately 8
300A), the sensitivity was insufficient because there was almost no absorption. In addition, since nitrogen is easily liberated, the storage stability in high-temperature environments was not sufficient. Furthermore, instead of forming a film by sputtering in nitrogen gas as proposed above, it has also been proposed to form a film by sputtering in a mixed gas of argon and nitrogen (Applied Physics Letters). Appl, Phys, Lett, 4
5, 202.1984)). However, this still did not provide sufficient recording sensitivity. By making the recording layer a crystalline material whose main components are tellurium, tellurium nitride, and selenium, the present inventors have achieved an optical recording medium with high sensitivity and good weather resistance, while also achieving good and stable signal quality. This discovery led to the present invention. The reason why this recording layer has high sensitivity, good weather resistance, good signal quality, and stability is not clear, but it is because the melting point of the entire system is lowered by adding selenium, and the layer is made crystalline. It seems that the sensitivity has increased because the formation of small holes, which is the initial stage of pore formation, occurs at a relatively low temperature, and the interaction between tellurium, tellurium nitride, and selenium works favorably, resulting in improved weather resistance. It is thought that the interaction between tellurium, tellurium nitride, and selenium and the fact that it is crystalline work favorably, resulting in good and stable signal quality.
(実施例) 以下、本発明の実施例について説明する。(Example) Examples of the present invention will be described below.
100°Cで2時間アニール処理した内径15mm、外
径130mm、厚さ1.2mmの案内溝付きポリカーボ
ネイト樹脂ディスク基板上に、テルルセレン合金ターゲ
ットをアルゴンと窒素の混合ガスでマグネトロンスパッ
タすることにより約300入庫の膜を形成し、しかる後
、温度85°C1相対湿度90%の環境に12時間保存
して光記録媒体を作製した。このようにして作製した記
録膜を分析したところ、記録層はテルルと窒化テルルと
セレンとを含んでおり、テルルと窒素とセレンとの原子
数の比はおよそ90対5対5であり、記録層は多結晶質
であった。この光ディスクの波長5aooAにおける基
板入射の反射率を測定したところ、約29%であった。A tellurium selenium alloy target was magnetron sputtered with a mixed gas of argon and nitrogen onto a polycarbonate resin disk substrate with an inner diameter of 15 mm, an outer diameter of 130 mm, and a thickness of 1.2 mm that had been annealed at 100°C for 2 hours. A storage film was formed and then stored for 12 hours in an environment with a temperature of 85° C. and a relative humidity of 90% to produce an optical recording medium. Analysis of the recording film produced in this manner revealed that the recording layer contained tellurium, tellurium nitride, and selenium, and the ratio of tellurium, nitrogen, and selenium atoms was approximately 90:5:5. The layer was polycrystalline. When the reflectance of this optical disk was measured when it was incident on the substrate at a wavelength of 5 aooA, it was about 29%.
波長8300Aの半導体レーザ光を基板を通して入射し
て記録層上で1.6pm中程度に絞り、媒体線速度5.
65m1sec、記録周波数3.77MHz、記録パル
ス幅70nsec、記録パワー6.0mWの条件で記録
し、0.7mWで再生した。バンド幅30KHzのキャ
リアーとノイズとの比(C/N)は48dBと良好であ
った。この値は、記録再生装置を変更することにより生
ずる記録パワー変動に対しても実用上充分に安定であっ
た。この光ディスクを85°090%の高温高湿度の環
境に60時間保存した後、上記特性を調べたが変化はな
く、耐候性に優れた光記録媒体であることが確認された
。Semiconductor laser light with a wavelength of 8300 A is incident through the substrate and focused onto the recording layer to a medium diameter of 1.6 pm, and the medium linear velocity is set to 5.
Recording was performed under the conditions of 65 m1 sec, recording frequency of 3.77 MHz, recording pulse width of 70 nsec, and recording power of 6.0 mW, and reproduction was performed at 0.7 mW. The carrier-to-noise ratio (C/N) with a bandwidth of 30 KHz was as good as 48 dB. This value was sufficiently stable for practical use even against fluctuations in recording power caused by changing the recording/reproducing device. After this optical disc was stored in a high temperature and high humidity environment of 85°090% for 60 hours, the above characteristics were examined, but there was no change, and it was confirmed that the optical recording medium had excellent weather resistance.
テルルと窒化テルルとセレンとを主成分とする層の厚さ
は100人がら1000人の範囲が記録再生特性の観点
から望ましく、セレンの含有量は原子パーセントで2パ
一セント以上40パーセント未満の範囲が記録再生特性
、耐候性の観点がら望ましく、窒化テルルの含有量は窒
素の原子数換算で2パーセント以」=2020パ一セン
トが記録再生特性、耐候性の観点から望ましい。The thickness of the layer mainly composed of tellurium, tellurium nitride, and selenium is desirably in the range of 100 to 1000 from the viewpoint of recording and reproducing characteristics, and the selenium content is 2% or more and less than 40% in atomic percent. The content of tellurium nitride is desirably within the range of 2% or more in terms of the number of nitrogen atoms from the viewpoint of recording/reproducing characteristics and weather resistance.
テルルと窒化テルルとセレンとを主成分とする層には、
鉛、スズ、ゲルマニウム、アンチモン、インジウム、ガ
リウム、亜鉛、ビスマス、アルミニウム、銅、銀、マグ
ネシウム、タンタル、金、パラジウム、コバルトの群か
ら選ばれた少なくとも1種の元素を添加すると、ピット
の形状を良好に整える場合がある。ただし、添加量は原
子パーセントで20パ一セント未満が望ましい。In the layer whose main components are tellurium, tellurium nitride, and selenium,
When at least one element selected from the group of lead, tin, germanium, antimony, indium, gallium, zinc, bismuth, aluminum, copper, silver, magnesium, tantalum, gold, palladium, and cobalt is added, the shape of the pits can be changed. It may be well arranged. However, the amount added is preferably less than 20% in atomic percent.
テルルと窒化テルルとセレンとを主成分とする層と基板
との間には酸化物、窒化物、フッ化物、炭化物、硫化物
、ホウ化物のうちの少なくとも1層を形成すると、記録
パワー変動に対する余裕度が大きくなり、トラッキング
やフォーカスのサーボが安定になることがある。Tellurium and nitride If at least one layer of oxide, nitride, fluoride, carbide, sulfide, or boride is formed between the layer containing tellurium and selenium as main components and the substrate, it will be effective against fluctuations in recording power. The margin increases, and tracking and focus servos may become more stable.
(発明の効果)
上記実施例から明らかなように、本発明により耐候性が
充分によく、かつ高感度で信号品質の充分に良好で安定
な光記録媒体が得られる。(Effects of the Invention) As is clear from the above examples, the present invention provides a stable optical recording medium with sufficiently good weather resistance, high sensitivity, and sufficiently good signal quality.
第1図は光記録媒体の一例を示す断面概略図である。図
において、1は基板、21は記録層、22はピッ升 1
図
手続補正書(自発)
62.11.27
昭和 年 月 日
一6事件の表示 昭和61年 特許願 第22765
2号2、発明の名称
光記録媒体
3、補正をする者
事件との関係 出願人
東京都港区芝五丁目33番1号
(423) 日本電気株式会社
代表者 関本忠弘
−代理人
5、補正の対象
(1)明細書の発明の詳細な説明の欄
6、補正の内容
(1)明細書第7頁第11行目の後に次の文を挿入する
。
「テルル、セレン、鉛合金の例について以下に説明する
。FIG. 1 is a schematic cross-sectional view showing an example of an optical recording medium. In the figure, 1 is a substrate, 21 is a recording layer, and 22 is a pitch 1
Illustration procedure amendment (spontaneous) 62.11.27 Showa 1988 Patent Application No. 22765
No. 2 No. 2, Name of the invention Optical recording medium 3, Person making the amendment Relationship to the case Applicant 5-33-1 Shiba, Minato-ku, Tokyo (423) NEC Corporation Representative Tadahiro Sekimoto - Agent 5, Amendment (1) Contents of amendment in Column 6 of Detailed Description of the Invention of the Specification (1) The following sentence should be inserted after the 11th line of page 7 of the specification. “Examples of tellurium, selenium, and lead alloys are explained below.
Claims (1)
において、テルルと窒化テルルとセレンとを主成分とす
る結晶質の記録層を有することを特徴とする光記録媒体
。An optical recording medium for recording and reading information using a laser beam, characterized by having a crystalline recording layer containing tellurium, tellurium nitride, and selenium as main components.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61227652A JPS6381091A (en) | 1986-09-25 | 1986-09-25 | Optical recording medium |
US07/043,626 US4839208A (en) | 1986-04-30 | 1987-04-28 | Optical information recording medium |
DE8787106262T DE3781926T2 (en) | 1986-04-30 | 1987-04-29 | MEDIUM FOR OPTICAL INFORMATION RECORDING. |
EP87106262A EP0243958B1 (en) | 1986-04-30 | 1987-04-29 | Optical information recording medium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61227652A JPS6381091A (en) | 1986-09-25 | 1986-09-25 | Optical recording medium |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6381091A true JPS6381091A (en) | 1988-04-11 |
JPH0481954B2 JPH0481954B2 (en) | 1992-12-25 |
Family
ID=16864219
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61227652A Granted JPS6381091A (en) | 1986-04-30 | 1986-09-25 | Optical recording medium |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6381091A (en) |
-
1986
- 1986-09-25 JP JP61227652A patent/JPS6381091A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH0481954B2 (en) | 1992-12-25 |
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