JPH05166875A - Semiconductor device by tape-carrier system - Google Patents

Abstract

PURPOSE:To obtain the title semiconductor device wherein a crosstalk noise is reduced, a transmission loss is reduced and it is possible to prevent the operating trouble such as the malfunction or the like of a bare chip IC from being caused by a method wherein organic base materials are applied to both faces of a conductor layer for grounding use, TAB leads are wired alternately on one side each at their outside and zigzag connections are formed. CONSTITUTION:A bare chip IC 1 is arranged in the center whose circumference has been surrounded, by keeping a prescribed interval, by a TAB tape which is composed of the following: tapelike organic base materials 10, 11 composed of a polyimide or the like; and a plurality of TAB leads 12, 13 which have been applied to faces of the organic base materials and which have been formed of a copper foil by an etching operation. Inner sides of the individual TAB leads 12, 13 are connected to a plurality of terminals for the bare chip IC 1. In a semiconductor device by a tape carrier system, the organic base materials 10, 11 are applied to both faces of a conductor layer 9 for grounding use, the TAB leads 12, 13 are wired alternately on one side each of the organic base materials 10, 11 at the outside and zigzag connections are formed.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION The present invention relates to a tape-shaped insulating film made of polyimide or the like, and attached on the film.
The present invention relates to a tape carrier type semiconductor device including a lead frame formed of copper foil by etching.

[0002]

2. Description of the Related Art FIG. 4 is a structural view of a conventional high frequency tape carrier (TAB) type semiconductor device, in which (a) is a top view and (b) is a cross-sectional view taken along the line aa of the top view. (C)
A cross-sectional view taken along the line bb of the top view is shown in FIG. In the figure,
Reference numeral 1 denotes a rectangular bare chip IC, each of which has a plurality of bumps 2 protruding from the upper surface at the edge portions of four sides.

Reference numeral 3 denotes an organic base material made of polyimide or the like arranged so as to surround the bare chip IC1, at a position where a predetermined distance is secured from the periphery of the bare chip IC1, and the upper end of the bump 2 and the organic base material. 3 are arranged so that their upper surfaces are substantially flush with each other. Reference numeral 4 denotes a plurality of TAB leads formed on the organic base material 3, and each of the TAB leads 4 extends from each side around the bare chip IC1 at right angles to the outer organic base material 3 direction. Thus, the inner side is connected to the bare chip IC1 via the bumps 2.

Reference numeral 5 denotes a device hole provided at the center of the organic base material 3, and the bare chip IC 1 is provided at the center thereof.
Are arranged to form the structure of the semiconductor device as described above. Reference numeral 6 denotes a conductor layer formed on the opposite side of the bonding surface of the TAB lead 4 on the organic base material 3 to the organic base material 3, that is, on the lower surface side as shown in FIGS. The conductor layer 6 is used as a ground conductor, and the via conductor 7 is formed by vertically penetrating the organic base material 3.
Is connected to one of the TAB leads 4 for ground TAB lead 4a.

A microstrip line structure is formed by the TAB lead 4, the organic base material 3, and the conductor layer 6 having such a structure, and a tape carrier type semiconductor device for high speed signal transmission is obtained.

[0006]

However, in the conventional device having the above-mentioned structure, when high density wiring of TAB leads is performed or high-speed signal transmission is performed by the TAB leads, the wiring pitch between the TAB leads is increased. Since the TAB lead is narrow, crosstalk noise may increase due to unintended capacitance between adjacent TAB leads due to the proximity of the TAB leads.
This crosstalk noise causes a problem that the bare chip IC malfunctions.

Further, in order to prevent the occurrence of crosstalk nose due to the high-density wiring, if the width of the TAB leads is narrowed, the space between the TAB leads can be widened and the crosstalk noise can be prevented. However, if the width of the TAB lead is narrowed in this way, the transmission loss due to the TAB lead increases, and there is a problem that the bare chip IC malfunctions or the bare chip IC does not operate due to a transmission failure.

The present invention has been made to solve the above-mentioned problems, and reduces crosstalk noise which is increased due to the narrow wiring pitch between a plurality of TAB leads, and the TAB lead width is reduced. An object of the present invention is to provide a tape carrier type semiconductor device having a reliable operation performance in which the transmission loss caused by the narrowness is reduced and the malfunction or the operation failure such as the bare chip IC does not occur. To do.

[0009]

In order to achieve the above-mentioned object, the present invention is directed to a tape-shaped organic base material made of polyimide or the like and a plurality of tape-shaped organic base materials formed on a surface of the organic base material by etching. TA consisting of the TAB lead
In a tape carrier type semiconductor device in which a bare chip IC is arranged in the center surrounding the periphery with a predetermined gap by B tape and the inner side of each TAB lead is connected to a plurality of terminals of the bare chip IC, The organic base material is scissored on both sides of the conductor layer for use, and the TAB leads are alternately arranged on the outer side of the organic base material on each side of the organic base material to form a staggered wiring.

[0010]

According to the above-mentioned structure, the TAB leads, which are wired at a predetermined pitch according to the arrangement of the terminals of the bare chip IC, are provided on the organic base material formed on both sides of the ground conductor on both sides of the organic base material. Since the staggered wirings are alternately arranged, the wiring pitch of each TAB lead is widened, and the width is ensured to be about twice as large.

Therefore, the occurrence of crosstalk noise, which is increased due to the narrow wiring pitch between the plurality of TAB leads, is suppressed, and the occurrence of malfunction such as malfunction or non-operation of the bare chip IC is prevented.

[0012]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. 1A and 1B are structural views of a semiconductor device showing a first embodiment. FIG. 1A is a top view and FIG. 1B is a top view cc.
A line sectional view, (c) shows a dd line sectional view, respectively. In addition, in the first embodiment, as shown in FIG. 1, the structure of the TAB tape surrounding the bare chip IC1 is applied to the middle conductor layer for ground and the upper and lower surfaces of the conductor layer for ground. It has a five-layer structure having a dielectric layer (organic base material), and conductor layers composed of TAB leads formed on the upper and lower surfaces of this dielectric layer.

In FIG. 1, 1 is a bare chip IC, 2 is a bump, and these are almost the same as the conventional ones.
The same reference numerals as in the conventional art are given and the description thereof is omitted. Reference numeral 9 is a ground conductor layer, and 10 and 11 are organic base materials as dielectrics that are laminated so that the conductor layer 9 serves as an intermediate layer and covers the upper and lower surfaces of the conductor layer 9. And
As shown in FIGS. 1A and 1B, TAB leads 12 and 13 as conductor layers are formed on the surfaces of the organic base materials 10 and 11 so as to be in contact with and laminated on the surfaces of the organic base materials 10 and 11. The TAB leads 12 and 13 are laminated so that the TAB leads 12 and 13 are alternately in contact with the surfaces of the organic base materials 10 and 11, respectively. That is, according to FIG. 1, the TAB lead 12 is on the upper surface of the organic base material 10 with the conductor layer 9 as a boundary, and the TAB lead 13 is on the lower surface side of the organic base material 1.
It is arranged so as to contact with 1. by this,
The organic base materials 10 and 11 with the conductor layer 9 sandwiched therebetween are alternately sandwiched from above and below by a plurality of TAB leads 12 and 13 arranged at a predetermined interval, and each TAB lead 12 and 13 is made of organic material. The space between adjacent TAB leads on the surfaces of the base materials 10 and 11 is widened.

Therefore, the lead widths of the TAB leads 12 and 13 are wide at the contact portions with the organic base materials 10 and 11, respectively, and are narrow at other portions, and the widened portions cause transmission at the TAB leads 12 and 13. It reduces the loss. The inner sides of the TAB leads 12 and 13 are connected to the electrodes of the bare chip IC 1 in the device hole 5 via the bumps 2 made of Au or the like.

In order to set the potential of the conductor layer 9 to the ground, one of the TAB leads 12 or 13 for grounding the TAB lead 13a is penetrated through the organic base material 11 located on the lower surface side of the conductor layer 9. The conductor layer 9 and the ground TAB lead 13a are connected to each other through the via conductor 14 provided as above, so that the conductor layer 9 and the ground TAB lead 13a have the same potential. Here, a manufacturing process of the TAB tape 8 including the conductor layer 9, the organic base materials 10 and 11, and the TAB leads 12 and 13 described above will be described.

2 (a) to 2 (p) are explanatory views showing a manufacturing process of the TAB tape 8 having three conductor layers and two dielectric layers, and the procedure will be described below. First, (a) shows the side surface of the organic base material 11 made of polyimide or the like, which is supported horizontally as shown in the figure. Organic substrate 1 in this state
A current film 15 is formed on the upper surface of 1 by plating or sputtering as shown in (b). continue,
In (c), a resist film 16 is laminated on the current film 15, exposed and developed in (d) on the resist film 16, and a ground conductor layer 17 is formed by plating in (e). Then, in (f), unnecessary portions of the resist film 16 and the current film 15 are removed.

Next, in (g), the second layer of the organic base material 10 is coated on the organic base material 11 and the ground conductor layer 17, and in (h), the resist film 1 is formed on the organic base material 10.
6 is laminated, exposed and developed in (i), and the organic base materials 10 and 11 are etched in (j).
A device hole 18 penetrating 0 and 11 and a via hole 19 reaching the organic base material 10 to the conductor layer 9 are formed.

After that, the resist film 16 is removed in (k), and the backing agent 20 is injected into the device hole 18. The backing agent 20 is made of a material that is easily dissolved in a specific polyimide-based or polyamide-based solvent and has high dimensional accuracy.
In (l), the organic base material 1 is formed so as to cover the backing agent 20.
A current film 15 is formed on the upper surface side of 0 and the lower surface side of the organic base material 11 by plating or sputtering, and the resist film 16 is laminated so as to cover the current film 15 in (m). This is (n)
Then, the substrate is exposed and developed by (1) and copper plating is performed at (o) to form a ground TAB lead 21, a signal TAB lead 22, and a via conductor 23.

Then, in the final step (p), the resist film 16 laminated in the step (m) and the current film 15 formed in the step (l) below the resist film 16 are removed to remove the backing agent 20. By removing, the TAB tape 8 having three conductor layers and two dielectric layers, that is, five layers in total, can be manufactured. The TAB tape 8 manufactured in this manner is bent so that its inner side lead, that is, the bare chip IC1 side, is bent like the TAB leads 12 and 13 shown in FIG. 1 so as to be easily connected to the bump 2 of the bare chip IC1. The outer side leads are bent so that they can be easily connected to a printed circuit board (not shown).

FIG. 3 is a structural view of a semiconductor device showing a second embodiment of the present invention. FIG. 3 (a) is a top view,
(B) is a sectional view taken along the line ee of the top view. As shown in this figure, in the second embodiment, the TAB leads 12 and 13 are formed on the organic base materials 10 and 11 which are laminated with the conductor layer 9 for ground interposed therebetween in substantially the same manner as in the first embodiment. Since the organic base materials 10 and 11 are alternately laminated on the front and back to form a zigzag wiring, the wiring pitch between the TAB leads 12 or the TAB leads 13 on the organic base materials 10 and 11 is not staggered. In this case, that is, the wiring pitch can be set to be twice as wide as the conventional wiring pitch.

That is, in the first embodiment, TAB
The lead widths of the leads 12 and 13 are made wide in order to suppress the transmission loss, but in the second embodiment, the gap between adjacent leads can be doubled from the conventional one. Therefore, this expanded TA on the same organic substrate
Between the B leads, that is, the TAB leads 12 on the organic substrate 10.
Or between the TAB leads 13 on the organic base material 11,
A terminating resistor 24 for a signal input / output line, which is indispensable for a high frequency IC, is provided. Reference numeral 25 is a ground electrode that connects one end of the resistor 24.

With such a structure, the wiring length between the terminating resistor 24 and the electrode of the bare chip IC1 is shortened, which is useful for high frequency signal transmission.

[0023]

As described above, according to the present invention, a tape-shaped organic base material made of polyimide or the like, and a plurality of TAB leads formed on the surface of the organic base material by etching and formed from copper foil are provided. A bare chip I is formed in the center surrounded by a predetermined gap with a TAB tape made of
C is arranged, and each of the Ts is connected to a plurality of terminals of this bare chip IC.
In a tape carrier type semiconductor device in which the inner side of an AB lead is connected, the organic base material is scissored on both sides of a conductor layer for ground, and the TAB lead is provided outside the organic base material. It was decided to wire alternately on each side of the material to make staggered wiring.

For this reason, the wiring pitch between the TAB leads is about twice as wide as that of the conventional one, so that crosstalk noise between adjacent TAB leads can be generated even if high-density wiring is performed or high-speed signal transmission is performed. Occurrence can be suppressed, and as a result, it is possible to prevent malfunction such as malfunction or non-operation of the bare chip IC.

If the width of the portion of the TAB lead that is in contact with the organic base material is made wider than the width of the portion that is not in contact with the organic base material, transmission loss can be suppressed and the bare chip IC due to transmission failure can be suppressed. It is possible to prevent malfunctions and the like. Furthermore, by using the zigzag wiring, the adjacent T
By providing a resistor for terminating the signal in the gap between the TAB leads where the AB leads are widened, it is possible to terminate the signal in the vicinity of the electrodes of the bare chip IC. Therefore, the bare chip IC malfunctions or does not operate. It is possible to provide a reliable tape carrier semiconductor device that prevents the occurrence of such an operation failure.

[Brief description of drawings]

FIG. 1 is a structural view of a tape carrier type semiconductor device showing a first embodiment, in which FIG. 1A is a top view and FIG.
Shows a cross-sectional view taken along the line cc of the top view, and (c) shows a cross-sectional view taken along the line dd.

FIG. 2 is an explanatory diagram showing a manufacturing process of a TAB tape having three conductor layers and two dielectric layers according to the present embodiment.

3A and 3B are structural views of a semiconductor device showing a second embodiment, wherein FIG. 3A is a top view and FIG. 3B is a cross-sectional view taken along the line ee of the top view.

4A and 4B are structural views of a conventional tape carrier type semiconductor device, in which FIG. 4A is a top view and FIG. 4B is a top view a-.
A sectional view taken along the line a is shown in (c), and a sectional view taken along the line bb of the top view is shown.

[Explanation of symbols]

 1 Bare Chip IC 2 Bump 9 Conductor Layer 10 Organic Base Material 11 Organic Base Material 12 TAB Lead 13 TAB Lead 24 Resistor

Claims (3)

[Claims] 1. A TA comprising a tape-shaped organic base material made of polyimide or the like, and a plurality of TAB leads formed on a copper foil by etching and attached to the surface of the organic base material.
In a tape carrier type semiconductor device in which a bare chip IC is arranged in the center surrounding the periphery by opening a predetermined gap with the B tape, and the inner side of each TAB lead is connected to a plurality of terminals of the bare chip IC, Scissors the organic base material on both sides of the conductor layer for,
Further, a tape carrier type semiconductor device is characterized in that the TAB leads are arranged on the outer side of the organic base material alternately on each side of the organic base material to form a staggered wiring. 2. The tape carrier system according to claim 1, wherein a width of a portion of the TAB lead which is in contact with the organic base material is made wider than a width of a portion which is not in contact with the organic base material. Semiconductor device. 3. A plurality of adjacent Ts used as the zigzag wiring
2. The tape carrier type semiconductor device according to claim 1, wherein a resistor for terminating a signal is provided in a gap between the AB leads.