JPH05160187A - Fine pd wire for semiconductor element - Google Patents

Fine pd wire for semiconductor element

Info

Publication number
JPH05160187A
JPH05160187A JP3320428A JP32042891A JPH05160187A JP H05160187 A JPH05160187 A JP H05160187A JP 3320428 A JP3320428 A JP 3320428A JP 32042891 A JP32042891 A JP 32042891A JP H05160187 A JPH05160187 A JP H05160187A
Authority
JP
Japan
Prior art keywords
wire
ball
semiconductor element
fine
bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3320428A
Other languages
Japanese (ja)
Inventor
Sukehito Iga
祐人 伊賀
Ichiro Nagamatsu
一郎 永松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Denshi Kogyo KK
Original Assignee
Tanaka Denshi Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Denshi Kogyo KK filed Critical Tanaka Denshi Kogyo KK
Priority to JP3320428A priority Critical patent/JPH05160187A/en
Publication of JPH05160187A publication Critical patent/JPH05160187A/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45164—Palladium (Pd) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01045—Rhodium [Rh]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To provide a fine Pd wire for semiconductor element composed of such Pd alloy as causing no conventional trouble by improving sphericity and high temperature strength of ball within a predetermined compositional range. CONSTITUTION:The inventive fine Pd wire for semiconductor element is composed of Pd added with total 10at% or less of one or more than one kinds of 0.01-1.0at% Au, 0.01-10at% of Pt, 0.01-5at% of Ag and 0.01-6at% of Rh and containing inevitable impurities.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は半導体素子用のＰｄ極細
線、詳しくは半導体チップ上の電極と外部リードとを接
続するワイヤボンディング用又はバンプ電極用の 0.1mm
φ以下のＰｄ極細線に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a Pd ultrafine wire for a semiconductor element, more specifically 0.1 mm for wire bonding or bump electrode for connecting an electrode on a semiconductor chip and an external lead.
Regarding Pd extra fine wires of φ or less.

【０００２】[0002]

【従来の技術】従来、ワイヤボンディング用のＰｄ極細
線として、Ｌａ等の希土類元素またはＭｇ，Ｃａ，Ｔ
ｉ，Ｚｎ，Ｈｆ等を0.01ｗｔ％未満を添加したワイヤが
知られている（特公昭61-12011号公報、特開昭61-22133
6 号公報）。2. Description of the Related Art Conventionally, rare earth elements such as La or Mg, Ca, T have been used as Pd ultrafine wires for wire bonding.
A wire containing less than 0.01 wt% of i, Zn, Hf, etc. is known (Japanese Patent Publication No. 61-12011, JP-A No. 61-22133).
No. 6 bulletin).

【０００３】[0003]

【発明が解決しようとする課題】しかしながら、上記従
来のＰｄ極細線は添加量が0.01ｗｔ％を越える場合は、
ボールボンディング時またはバンプ接合時におけるボー
ル形成の際に、ボールに歪が生じるなど真球度が低くな
り所定の接合強度が得られないと共に、添加量が0.01ｗ
ｔ％未満の場合には、高温強度が低いために所定の特性
が得られず、特にバンプ用として使用する場合に、ボー
ル直上の切断位置がばらつきバンプ高さが一定しない不
具合があった。However, in the above-mentioned conventional Pd extra fine wire, when the addition amount exceeds 0.01 wt%,
At the time of ball formation at the time of ball bonding or bump bonding, the sphericity becomes low due to distortion of the ball and the predetermined bonding strength cannot be obtained, and the addition amount is 0.01w.
If it is less than t%, the high-temperature strength is low, so that the predetermined characteristics cannot be obtained, and particularly when used for bumps, there is a problem that the cutting position directly above the ball varies and the bump height is not constant.

【０００４】本発明は斯る従来事情に鑑み、所定の組成
範囲でボールの真球度及び高温強度を改善して従来不具
合を解消し得るＰｄ合金からなる半導体素子用のＰｄ極
細線を提供することを目的とする。In view of the above conventional circumstances, the present invention provides a Pd ultrafine wire for a semiconductor device, which is made of a Pd alloy capable of improving the sphericity and high temperature strength of a ball in a predetermined composition range and solving the conventional problems. The purpose is to

【０００５】[0005]

【課題を解決するための手段】斯る本発明のＰｄ極細線
は、0.01〜10at％のＡｕ、0.01〜10at％のＰｔ、0.01〜
5 at％のＡｇ、0.01〜6 at％のＲｈの中から１種、又は
２種以上の総量10at％以下を添加し、残部が不可避不純
物を含むＰｄからなることを特徴とする。尚、上記添加
量の単位：at％は原子％を示すものである。The Pd ultrafine wire of the present invention comprises 0.01-10 at% Au, 0.01-10 at% Pt, 0.01-
It is characterized in that 5 at% Ag and 0.01 to 6 at% Rh are added singly or two or more in total of 10 at% or less, and the balance is Pd containing inevitable impurities. The unit of addition amount: at% is atomic%.

【０００６】[0006]

【作用】本発明によれば、添加元素Ａｕ，Ｐｔ，Ａｇ，
Ｒｈは何れもＰｄと全率固溶するものであり、そのため
ボール形成時の加熱によってボール表面には酸化膜が形
成されず、ボールの真球度を高めるとともに高温強度を
改善する。そして、上記各元素の添加量が0.01at％未満
では前記改善の効果が得られず、またＡｕおよびＰｔが
各10at％、Ａｇが5 at％、Ｒｈが6at％を越える場合に
は、ボールが硬くなり過ぎて接合時にチップ割れが発生
するので好ましくない。又、上記添加元素を２種以上添
加する場合には、それらの総量が10at％を越えると同様
にボールが硬くなり過ぎて接合時にチップ割れの原因と
なる。従って、上述の添加量の範囲に設定するものであ
る。According to the present invention, the additional elements Au, Pt, Ag,
All of Rh are solid-solved with Pd, so that an oxide film is not formed on the surface of the ball due to heating during ball formation, thereby increasing the sphericity of the ball and improving the high temperature strength. If the addition amount of each of the above elements is less than 0.01 at%, the above improvement effect cannot be obtained, and if Au and Pt are each 10 at%, Ag is 5 at%, and Rh is more than 6 at%, the ball is It is not preferable because it becomes too hard and chip cracks occur during joining. Also, when two or more of the above-mentioned additional elements are added, if the total amount exceeds 10 at%, the balls become too hard and cause chip cracking during joining. Therefore, the amount is set within the above range.

【０００７】[0007]

【実施例】本発明の実施例を説明すれば、下表１の成分
組成を有する試料Ｎｏ．１〜４０のＰｄ極細線を用意
し、各試料毎に高温強度、ボール形状の真球度、チップ
割れの有無およびネック切れ位置の安定度をそれぞれテ
ストし測定した。その測定結果もまた下表１に示す。EXAMPLES Examples of the present invention will be described. Sample No. 1 having the composition shown in Table 1 below. 1 to 40 Pd ultrafine wires were prepared, and the high temperature strength, the sphericity of the ball shape, the presence or absence of chip cracks, and the stability of the neck breaking position were tested and measured for each sample. The measurement results are also shown in Table 1 below.

【０００８】[0008]

【表１】 [Table 1]

【０００９】各試料は、表１の高純度Ｐｄ（不可避不純
物を含む）と添加元素とからなる組成のＰｄ合金を、そ
れぞれ溶解鋳造し、次いで溝ロール加工を施し、その途
中で焼鈍処理を施した後に線引加工で線径２５μｍの母
線（伸び４％）に作成し、さらに十分な応力除去を行っ
た後にテストした。For each sample, a Pd alloy having a composition of high-purity Pd (including inevitable impurities) and additional elements shown in Table 1 was melt-cast, then groove-rolled, and annealed in the middle. After that, a bus bar having a wire diameter of 25 μm (elongation: 4%) was formed by wire drawing, and sufficient stress relief was performed, followed by a test.

【００１０】各テストの方法及び測定結果の判定は次の
通りである。高温強度は、標点間距離１００mmの各試料
を２５０℃，２０秒保持後に該温度雰囲気で引張り試験
機により引張りテストをし測定した値である。ボール形
状の真球度は、放電時間を４ｍｓとし、ボールの直径が
線径の２．５倍となるように放電々流を調整してボール
を形成し、該ボールに歪が有るか否かで測定した。測定
の結果、歪が無い場合を○印で、歪が有った場合を×印
でそれぞれ表記した。チップ割れの有無は、ボールを形
成した各試料を半導体チップに熱圧着して接合させる際
に該チップに割れが発生したか否かで測定した。測定の
結果、割れが発生しない場合を○印で、発生した場合を
×印でそれぞれ表記した。ネック切れ位置の安定度は、
前述のボールボンディング法により各試料を、半導体チ
ップに熱圧着させた後に引上げて切断させ、ボール直上
から切断位置までの高さ（ネック高さ）を測定した。測
定の結果、前記ネック高さのばらつきが±１０μｍ以下
の場合を安定として○印で、それを越えた場合を不安定
として×印でそれぞれ表記した。The method of each test and the determination of the measurement result are as follows. The high temperature strength is a value measured by holding a sample having a gauge length of 100 mm at 250 ° C. for 20 seconds and then performing a tensile test with a tensile tester in the temperature atmosphere. For the sphericity of a ball, the discharge time is set to 4 ms, the discharge flow is adjusted so that the diameter of the ball is 2.5 times the wire diameter, and the ball is formed. It was measured at. As a result of the measurement, when there is no distortion, it is indicated by ◯, and when there is distortion, it is indicated by ×. The presence or absence of cracks in the chip was measured by checking whether or not cracks were generated in the chips when the respective balls-formed samples were bonded to the semiconductor chips by thermocompression bonding. As a result of the measurement, when the crack did not occur, it was marked with a circle, and when it did, it was marked with a cross. The stability of the neck break position is
Each sample was thermocompression-bonded to the semiconductor chip by the above-mentioned ball bonding method and then pulled up and cut, and the height (neck height) from immediately above the ball to the cutting position was measured. As a result of the measurement, when the variation of the neck height is ± 10 μm or less, it is marked as stable, and when it exceeds it, it is marked as unstable and marked with x.

【００１１】上記表１によれば、添加元素Ａｕ，Ｐｔ，
Ａｇ，Ｒｈの添加量が0.01at％未満（試料Ｎｏ．１，
７，１３，１９）では，ボール形状は安定するものの、
高温強度が純Ｐｄ（試料Ｎｏ．４０）に較べさほどに改
善されないとともにネック切れ位置が安定せず、添加元
素Ａｕ，Ｐｔが各10at％を越える場合（試料Ｎｏ．６，
１２）および添加元素Ａｇが5 at％、Ｒｈが6 at％を越
える場合（試料Ｎｏ．１８，２４）には、チップ割れが
発生することが確認される。又、添加元素Ａｕ，Ｐｔ，
Ａｇ，Ｒｈの添加総量が10at％を越える場合（試料Ｎ
ｏ．３５〜３７）も同様にチップ割れが発生することが
確認される。尚、試料Ｎｏ．３８及び３９は従来品の一
つであるＬａを添加元素とした場合の測定結果である。According to Table 1 above, the additive elements Au, Pt,
The addition amount of Ag and Rh is less than 0.01 at% (Sample No. 1,
7, 13, 19), the ball shape is stable, but
When the high temperature strength is not improved so much as compared with pure Pd (Sample No. 40), the neck breaking position is not stable, and the additive elements Au and Pt each exceed 10 at% (Sample No. 6,
12) and when the additive element Ag exceeds 5 at% and the Rh exceeds 6 at% (Sample Nos. 18 and 24), it is confirmed that chip cracking occurs. In addition, additional elements Au, Pt,
When the total amount of Ag and Rh added exceeds 10 at% (Sample N
o. It is also confirmed that chip cracks similarly occur in 35 to 37). Sample No. 38 and 39 are the measurement results when La, which is one of the conventional products, is used as the additive element.

【００１２】従って、表１の測定結果により明らかな如
く、本発明実施品によればワイヤボンディング用または
バンプ電極用としての所定の特性が得られることが確認
できた。Therefore, as is clear from the measurement results shown in Table 1, it was confirmed that according to the embodiment of the present invention, predetermined characteristics for wire bonding or bump electrode can be obtained.

【００１３】[0013]

【効果】本発明によれば、ボール形成時に歪のない真球
状のボールを形成することができるとともに高温強度が
高くなり、ボールボンディングまたはバンプ接合におけ
る接合強度が改善され、またボールが硬すぎることがな
いので接合時のチップ割れ発生率も小さい。[Effects] According to the present invention, it is possible to form a spherical ball without distortion at the time of ball formation, the high temperature strength is improved, the bonding strength in ball bonding or bump bonding is improved, and the ball is too hard. Since there is no crack, the occurrence rate of chip cracks at the time of joining is also small.

【００１４】又、バンプ電極作製時においてボール直上
の切断位置が一定になるので、バンプ接合を確実安定な
らしめる。Further, since the cutting position immediately above the ball is constant during the production of the bump electrode, bump bonding can be reliably and stably performed.

【００１５】従って、ワイヤボンディング用またはバン
プ電極用として有用なＰｄ極細線を提供することができ
る。Therefore, it is possible to provide a Pd extra fine wire useful for wire bonding or for bump electrodes.

Claims (1)

【特許請求の範囲】[Claims] 【請求項１】0.01〜10at％のＡｕ、0.01〜10at％のＰ
ｔ、0.01〜5 at％のＡｇ、0.01〜6 at％のＲｈの中から
１種、又は２種以上の総量10at％以下を添加し、残部が
不可避不純物を含むＰｄからなる半導体素子用のＰｄ極
細線。1. Au of 0.01 to 10 at% and P of 0.01 to 10 at%
t, 0.01 to 5 at% Ag, 0.01 to 6 at% Rh, and 1 or 2 or more of the total amount of 10 at% or less is added, and the balance is Pd containing unavoidable impurities. Extra fine wire.
JP3320428A 1991-12-04 1991-12-04 Fine pd wire for semiconductor element Pending JPH05160187A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3320428A JPH05160187A (en) 1991-12-04 1991-12-04 Fine pd wire for semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3320428A JPH05160187A (en) 1991-12-04 1991-12-04 Fine pd wire for semiconductor element

Publications (1)

Publication Number Publication Date
JPH05160187A true JPH05160187A (en) 1993-06-25

Family

ID=18121344

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3320428A Pending JPH05160187A (en) 1991-12-04 1991-12-04 Fine pd wire for semiconductor element

Country Status (1)

Country Link
JP (1) JPH05160187A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994021833A1 (en) * 1993-03-19 1994-09-29 Nippon Steel Corporation Fine palladium alloy wire for semiconductor element wire bonding

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994021833A1 (en) * 1993-03-19 1994-09-29 Nippon Steel Corporation Fine palladium alloy wire for semiconductor element wire bonding
US5637274A (en) * 1993-03-19 1997-06-10 Nippon Steel Corporation Palladium alloy thin wire for wire bonding semiconductor elements

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