JP3064692B2 - Bonding wire for semiconductor device - Google Patents

Bonding wire for semiconductor device

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Publication number
JP3064692B2
JP3064692B2 JP4262216A JP26221692A JP3064692B2 JP 3064692 B2 JP3064692 B2 JP 3064692B2 JP 4262216 A JP4262216 A JP 4262216A JP 26221692 A JP26221692 A JP 26221692A JP 3064692 B2 JP3064692 B2 JP 3064692B2
Authority
JP
Japan
Prior art keywords
bonding
ball
chip
wire
point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP4262216A
Other languages
Japanese (ja)
Other versions
JPH06112253A (en
Inventor
一光 板橋
毅 鯨岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Denshi Kogyo KK
Original Assignee
Tanaka Denshi Kogyo KK
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Filing date
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Application filed by Tanaka Denshi Kogyo KK filed Critical Tanaka Denshi Kogyo KK
Priority to JP4262216A priority Critical patent/JP3064692B2/en
Publication of JPH06112253A publication Critical patent/JPH06112253A/en
Application granted granted Critical
Publication of JP3064692B2 publication Critical patent/JP3064692B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48617—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48624—Aluminium (Al) as principal constituent
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    • H01L2924/20752—Diameter ranges larger or equal to 20 microns less than 30 microns

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【産業上の利用分野】本発明は、半導体素子のチップ電
極と基板上の外部リードとを接続するために用いられる
半導体素子用ボンディングＡｕ線、特にワイヤボンディ
ング法及びバンプ接続法に好適なものに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device bonding Au wire used for connecting a chip electrode of a semiconductor device to an external lead on a substrate, and more particularly to a wire suitable for a wire bonding method and a bump connection method. .

【０００２】[0002]

【従来の技術】従来から、例えばキャピラリーの先端に
垂下せしめたＡｕ線の先端を電気トーチにより溶融させ
てボールを形成し、このボールをチップ上のＡｌ又はＡ
ｌ合金からなる電極に圧着・切断してバンプ電極を形成
するバンプ接続法や、前記ボールをチップ電極に圧着，
接合せしめた後、ループ状に外部リードまで導いて該外
部リードに圧着・切断することにより、チップ電極と外
部リードを接続させるワイヤボンディング法が知られて
いる。また、この種ボンディングに用いるに有用なＡｕ
線として、特公昭６２−２３４５５号，特開平２−９１
９４４号に開示されるような、所定範囲量のＰｄを添加
してなるものがある。2. Description of the Related Art Heretofore, for example, a tip of an Au wire suspended at a tip of a capillary is melted by an electric torch to form a ball, and the ball is formed of Al or A on a chip.
a bump connection method in which a bump electrode is formed by pressing and cutting an electrode made of an alloy;
A wire bonding method is known in which a chip electrode and an external lead are connected by bonding, bonding, and then crimping and cutting the external lead to the external lead in a loop shape. Also, Au useful for this kind of bonding is used.
As the line, JP-B-62-23455, JP-A-2-91
No. 944 discloses a method in which a predetermined range of Pd is added.

【０００３】[0003]

【発明が解決しようとする課題】しかし乍ら上記従来の
ボンディング線では、Ｐｄの添加によってＡｕ線におけ
る強度の向上は図れるものの、Ｐｄの添加量によって
は、チップ上のＡｌ電極とボールとの接合面（即ち、Ａ
点）におけるＡｕとＡｌの相互拡散が阻害され、その結
果、ボンディング後の高温放置試験におけるＡ点剥がれ
の発生率が高くなるという不具合があった。また、Ｐｄ
の添加量が多すぎるとボールが硬くなり、ボンディング
時にチップ割れを生じるという問題もあった。さらに、
近年における半導体装置の高密度化に伴い電極間のピッ
チが狭くなる傾向にあり、その結果、Ａｕ線先端に形成
され電極に圧着，接合せしめたボール（圧着ボール）同
士が接触する寸前まで電極ピッチ，配線ピッチが狭くな
ってきている。これに伴い、ボールボンディングにおけ
る圧着ボールがいびつな形状に変形した場合、圧着ボー
ル同士による接触不良を起すという問題がある。 However, in the above conventional bonding wire, although the strength of the Au wire can be improved by the addition of Pd, the bonding between the Al electrode on the chip and the ball depends on the amount of Pd added. Plane (ie, A
(Point), the interdiffusion of Au and Al is inhibited, and as a result, there is a problem that the rate of occurrence of point A peeling in a high-temperature storage test after bonding increases. Also, Pd
If the addition amount is too large, there is also a problem that the ball becomes hard and chip breakage occurs during bonding. further,
With the recent increase in the density of semiconductor devices, the
傾向 tends to be narrow, resulting in formation at the tip of the Au wire
Ball (crimped ball) crimped and bonded to the electrode
The electrode pitch and the wiring pitch are not narrow until just before
Is coming. In connection with this, in ball bonding
If the crimped ball deforms into an irregular shape,
This causes a problem of poor contact between the devices.

【０００４】本発明はこのような従来事情に鑑みてなさ
れたものであり、その目的とするところは、Ｐｄの添加
によりＡｕ線の強度向上を図ると同時に、その添加量を
限定することで、高温放置試験におけるＡ点剥がれの発
生率を低下させ、且つボンディング時にチップ割れや圧
着ボール同士による接触不良が生じる虞れの無いボンデ
ィング線を提供することにある。 The present invention has been made in view of such a conventional situation, and an object of the present invention is to improve the strength of an Au wire by adding Pd, and at the same time, to reduce the amount of addition.
By limiting, the occurrence rate of point A peeling in a high temperature storage test is reduced, and chip cracking and pressure
An object of the present invention is to provide a bonding wire that is free from the possibility of poor contact between the balls .

【０００５】[0005]

【課題を解決するための手段】以上の目的を達成するた
めに、本発明の半導体素子用ボンディング線は、高純度
Ａｕに、高純度のＰｄを１wt％含有せしめると共に、Ｆ
ｅ，Ｓｉ，Ｂｅ，Ｃａ，Ｇｅ，Ｙ，Ｓｃ，希土類元素の
中から少なくとも１種を、総添加量０．０００１〜０．
００５wt％含有せしめたことを特徴とする。In order to achieve the above object, a bonding wire for a semiconductor device according to the present invention comprises a high-purity Au containing 1 wt% of high-purity Pd and a high purity of Pd.
e, Si, Be, Ca, Ge, Y, Sc, and at least one of the rare earth elements in a total addition amount of 0.0001 to 0.1.
005 wt%.

【０００６】[0006]

【作用】上記の構成によれば、Ｐｄの添加量を１wt％と
し、且つＦｅ，Ｓｉ，Ｂｅ，Ｃａ，Ｇｅ，Ｙ，Ｓｃ，希
土類元素の中から少なくとも１種を添加することで、Ａ
ｕ線の破断強度が向上すると同時に、ボールとチップ電
極の下地金属層との接合面におけるＡｕとＡｌの相互拡
散が適度になされ、該接合面、即ち、Ａ点における接合
強度が改善される。According to the above arrangement, the amount of Pd is set to 1 wt% , and at least one of Fe, Si, Be, Ca, Ge, Y, Sc and rare earth elements is added, whereby A
At the same time as the breaking strength of the u-line is improved, the mutual diffusion of Au and Al at the bonding surface between the ball and the underlying metal layer of the chip electrode is moderately performed, and the bonding strength at the bonding surface, that is, at the point A is improved.

【０００７】しかし乍ら、Ｐｄの添加量が０．０１wt％
未満では満足な破断強度が得られないと共に、前記接合
面におけるＡｕとＡｌの相互拡散が過剰になり、接合強
度の低下が生じる。また、Ｐｄの添加量が多くなると、
前記接合面におけるＡｕとＡｌの相互拡散が阻害されて
接合強度が低下し、Ａ点剥がれの発生率が高くなると共
に、ボールが硬くなってボンディング時にチップ割れが
生じる。さらに上記Ｐｄの添加量を１wt％とした場合、
Ａｕ線の強度向上、高温放置試験におけるＡ点剥がれの
発生率低下、ボンディング時のチップ割れ防止、圧着ボ
ール同士による接触不良の防止という本発明の課題に対
し、より好ましい効果を得ることができる。 However, the amount of Pd added is 0.01 wt%.
If it is less than 30%, satisfactory breaking strength cannot be obtained, and mutual diffusion of Au and Al at the bonding surface becomes excessive, resulting in a decrease in bonding strength. Further, the addition amount of Pd is increased,
Interdiffusion of Au and Al at the bonding surface is hindered, the bonding strength is reduced, the rate of occurrence of point A peeling is increased, and the ball is hardened, causing chip cracking during bonding. Further, when the addition amount of Pd is 1 wt%,
Improvement of Au wire strength, peeling of point A in high temperature storage test
Low incidence, chip breakage during bonding, crimping
The problem of the present invention of preventing poor contact between
Thus, a more favorable effect can be obtained.

【０００８】さらに、Ｆｅ，Ｓｉ，Ｂｅ，Ｃａ，Ｇｅ，
Ｙ，Ｓｃ，希土類元素の総添加量が０．０００１wt％未
満だと満足な特性が得られず、また、これら添加元素の
総添加量が０．００５wt％を越えると、ボール形成時に
おけるボール形状が安定せず、ボールとチップ電極との
接合強度が低下してＡ点剥がれの発生率が高くなる。Further, Fe, Si, Be, Ca, Ge,
If the total amount of Y, Sc and rare earth elements is less than 0.0001% by weight, satisfactory characteristics cannot be obtained, and if the total amount of these additional elements exceeds 0.005% by weight, the ball shape at the time of ball formation will not be obtained. Is not stable, the bonding strength between the ball and the chip electrode is reduced, and the occurrence rate of the point A peeling increases.

【０００９】従って、Ｐｄの添加量を１wt％に、Ｆｅ，
Ｓｉ，Ｂｅ，Ｃａ，Ｇｅ，Ｙ，Ｓｃ，希土類元素の総添
加量を０．０００１〜０．００５wt％の範囲に、各々設
定した。 Therefore, when the amount of Pd added is 1 wt% , Fe,
The total amount of Si, Be, Ca, Ge, Y, Sc, and rare earth elements was set in the range of 0.0001 to 0.005 wt% .

【００１０】[0010]

【実施例】以下、具体的な実施例について説明する。Embodiments Hereinafter, specific embodiments will be described.

【００１１】高純度Ａｕ（９９．９９％以上）に、Ｐ
ｄ，Ｆｅ，Ｓｉ，Ｂｅ，Ｃａ，Ｇｅ，Ｙ，Ｓｃ，Ｌａを
表１中に示す含有率に基づき添加して溶解鋳造し、次に
溝ロール加工を施し、その途中で焼なまし処理を施した
後に線引加工で線径２５μｍの母線に成形し、更に十分
な応力除去を行うことにより各試料とした。[0011] High purity Au (99.99% or more)
Based on the contents shown in Table 1, d, Fe, Si, Be, Ca, Ge, Y, Sc, and La were added and melt-cast, and then subjected to groove roll processing. After the application, the sample was formed into a bus bar having a wire diameter of 25 μm by wire drawing, and further stress was sufficiently removed to obtain each sample.

【００１２】表１中の試料Ｎｏ．１〜１２は、高純度Ａ
ｕにＰｄを１wt％添加すると共に、Ｆｅ，Ｓｉ，Ｂｅ，
Ｃａ，Ｇｅ，Ｙ，Ｓｃ，希土類元素の代表としてＬａを
選び、その中から少なくとも１種を本発明の規定量添加
した本発明実施品である。また、試料Ｎｏ．１３は高純
度Ａｕに何も添加しない比較品、試料Ｎｏ．１４は高純
度ＡｕにＰｄを６wt％添加せしめた比較品、試料Ｎｏ．
１５はＦｅ，Ｓｉ，Ｂｅ，Ｃａ，Ｇｅ，Ｙ，Ｓｃ，希土
類元素の総添加量を０．００５wt％を越えるものとした
比較品、試料Ｎｏ．１６，１７は同添加量を０．０００
１wt％未満とした比較品、試料Ｎｏ．１８，１９はＰｄ
の添加量を０．０１wt％とした比較品である。Sample No. 1 in Table 1 1 to 12 are high-purity A
1% by weight of Pd to u, Fe, Si, Be,
This is an embodiment of the present invention in which La is selected as a representative of Ca, Ge, Y, Sc, and rare earth elements, and at least one of them is added in a specified amount according to the present invention. In addition, the sample No. 13 is a comparative product in which nothing is added to high-purity Au; 14 is a comparative product obtained by adding 6 wt% of Pd to high-purity Au.
No. 15 is a comparative product in which the total added amount of Fe, Si, Be, Ca, Ge, Y, Sc, and rare earth elements exceeds 0.005 wt%. 16 and 17 are 0.000
Comparative product , sample No. less than 1 wt % 18 and 19 are Pd
Is a comparative product with the addition amount of 0.01 wt% .

【００１３】尚、表１では希土類元素の代表としてＬａ
のデータを示したが、これ以外の希土類元素はＬａと同
質性のため省略した。In Table 1, La is a typical rare earth element.
However, other rare earth elements are omitted because they are the same as La.

【００１４】上記のようにして作製した各試料を熱処理
により所定の伸び率に合わせた後、破断強度及びＡ点剥
がれ発生率、圧着ボールの真円度、ボンディング時のチ
ップ割れを測定した。圧着ボールの真円度は、Ａｕ線の
先端に形成したボールを顕微鏡で観察し、いびつな形状
の場合は×、真円度が高い場合は○で評価し、結果を表
中に記載した。 チップ割れは、Ａｕ線の先端に形成した
ボールをチップ電極に圧着し、圧着後のチップ割れの有
無を顕微鏡で観察した。チップ割れが生じた場合は表中
に記載した。 After adjusting each of the samples prepared as described above to a predetermined elongation by heat treatment, the breaking strength, the rate of occurrence of peeling at the point A , the roundness of the pressure-bonded ball, and the chip at the time of bonding are obtained.
The top crack was measured. The roundness of the crimped ball is the
Observe the ball formed at the tip with a microscope and see the irregular shape
In the case of ×, and in the case of high roundness, the evaluation is ○.
It was described in. Chip crack was formed at the tip of the Au wire
The ball is crimped to the tip electrode and the chip cracks after crimping.
Nothing was observed with a microscope. In case of chip breakage
It described in.

【００１５】破断強度は、各試料を標点間距離１００ｍ
ｍにて引張速度１０ｍｍ／ｍｉｎで引張り試験を行った
時の破断荷重を測定した。[0015] The breaking strength was determined by measuring the distance between the gauges of each sample to 100 m.
The breaking load at the time of conducting a tensile test at a tensile speed of 10 mm / min at m was measured.

【００１６】Ａ点剥がれ発生率は、各試料をＡｌ薄膜
（０．８μｍ厚）のチップ電極上に所定条件にてボンデ
ィングした後、Ａｌが拡散し易い高温条件下で放置し
（２００℃×３００時間）、その後にＣ点（ループ部）
を引張るプルテストを行って、ボンディングワイヤがチ
ップとの接合面から剥がれた割合を計算した。これらの
結果も表１中に示す。The rate of occurrence of point A peeling was determined by bonding each sample on a chip electrode of an Al thin film (0.8 μm thick) under a predetermined condition, and then leaving the sample under a high temperature condition where Al is easily diffused (200 ° C. × 300). Time), then point C (loop)
Of the bonding wire was peeled off from the bonding surface with the chip. These results are also shown in Table 1.

【００１７】[0017]

【表１】 [Table 1]

【００１８】試料Ｎｏ．１〜１２の測定結果から、高純
度ＡｕにＰｄを１wt％添加すると共に、Ｆｅ，Ｓｉ，Ｂ
ｅ，Ｃａ，Ｇｅ，Ｙ，Ｓｃ，希土類元素の中から少なく
とも１種を本発明の規定量添加すれば、所望の破断強度
が得られると同時に、ボールとチップ電極の下地金属層
との接合面（Ａ点）において剥がれが発生せず、該接合
面における接合強度が改善されることに加え、ボンディ
ング時のチップ割れが無く、且つ圧着ボールの真円度が
高くボンディング時に圧着ボール同士が接触不良を起す
虞れが無いことが確認できた。Sample No. From the measurement results of 1 to 12 , 1 wt% of Pd was added to high purity Au, and Fe, Si, B
If at least one of e, Ca, Ge, Y, Sc, and rare earth elements is added in the specified amount according to the present invention , a desired breaking strength can be obtained, and at the same time, a bonding surface between the ball and the underlying metal layer of the chip electrode. peeling is not generated in (a point), in addition to the bonding strength of the bonding surfaces is improved, Bondi
No chip breakage during crimping and roundness of crimped ball
High pressure causes poor contact between crimped balls during bonding
It was confirmed that there was no fear .

【００１９】また、試料Ｎｏ．１３の測定結果から、Ｐ
ｄを添加しない場合は所定の破断強度が得られないと共
に、Ａ点剥がれの発生率が高く、圧着ボールの形状がい
びつになること、試料Ｎｏ．１４の測定結果から、Ｐｄ
の添加量が多い場合は、破断強度は満足し得るもののＡ
点剥がれの発生率が高く、且つボンディング時にチップ
割れが生じることが確認できた。The sample No. From the measurement results of 13 , P
together if not added d not obtained a predetermined breaking strength, the incidence of peeling point A rather high, shape purchase a compression ball
To become a Bitsu, sample No. From the 14 measurement results, Pd
When the addition amount of A is large , the breaking strength can be satisfied, but A
Point peeling incidence of rather high, and the chip during bonding
It was confirmed that cracks occurred .

【００２０】さらに、試料Ｎｏ．１５〜１７の測定結果
から、Ｐｄの添加量が１wt％であっても、Ｆｅ，Ｓｉ，
Ｂｅ，Ｃａ，Ｇｅ，Ｙ，Ｓｃ，希土類元素の添加総量が
０．０００１wt％未満では満足な特性を得られないこと
が、０．００５wt％を越えるとＡ点剥がれが発生するこ
とが、夫々確認できた。また試料Ｎｏ．１８，１９の測
定結果から、Ｐｄの添加があっても本発明の規定量に満
たない場合は、圧着ボールの形状がいびつになることが
確認できた。 Further, the sample No. From the measurement results of 15 to 17 , even if the addition amount of Pd is 1 wt% , Fe, Si,
It was confirmed that satisfactory characteristics could not be obtained if the total amount of Be, Ca, Ge, Y, Sc, and rare earth elements was less than 0.0001 wt%, and that point A peeling occurred if the total amount exceeded 0.005 wt%. did it. Sample No. Measurement of 18, 19
From the results, it was found that even if Pd was added,
If not, the shape of the crimped ball may be distorted
It could be confirmed.

【００２１】[0021]

【発明の効果】本発明に係る半導体素子用ボンディング
線は以上説明したように構成したので、Ｐｄの添加によ
る破断強度の向上効果はそのまま維持しつつ、その添加
量を所定の範囲内に限定し、且つ、Ｆｅ，Ｓｉ，Ｂｅ，
Ｃａ，Ｇｅ，Ｙ，Ｓｃ，希土類元素を所定量添加するこ
とで、ボンディング後の高温放置試験におけるＡ点剥が
れの発生率を著しく低下できる。Since the bonding wire for a semiconductor device according to the present invention is constructed as described above, the effect of improving the breaking strength by adding Pd is kept as it is, and the amount of addition is limited to a predetermined range. , And Fe, Si, Be,
By adding predetermined amounts of Ca, Ge, Y, Sc, and rare earth elements, the rate of occurrence of point A peeling in a high temperature storage test after bonding can be significantly reduced.

【００２２】従って、ボンディング後において所定の強
度を得られると共に、ボールとチップ電極の接合強度を
著しく改善し、且つボンディング時のチップ割れ，圧着
ボール同士の接触不良を防止して、ワイヤボンディング
法及びバンプ接続法に用いるに極めて有用な半導体素子
用ボンディング線を提供できた。 Accordingly, a predetermined strength can be obtained after the bonding, the bonding strength between the ball and the chip electrode can be remarkably improved, and the chip can be cracked and crimped during bonding.
A bonding wire for a semiconductor element, which is extremely useful for the wire bonding method and the bump connection method, can be provided by preventing poor contact between balls .

───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/60 301 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 7 , DB name) H01L 21/60 301

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項１】 高純度Ａｕに、高純度のＰｄを１wt％含1. A high-purity Au containing 1 wt% of high-purity Pd.
有せしめると共に、Ｆｅ，Ｓｉ，Ｂｅ，Ｃａ，Ｇｅ，And at the same time, Fe, Si, Be, Ca, Ge,
Ｙ，Ｓｃ，希土類元素の中から少なくとも１種を、総添Y, Sc, at least one element selected from rare earth elements
加量０．０００１〜０．００５wt％含有せしめてなる半Addition amount of 0.0001 to 0.005 wt%
導体素子用ボンディング線。Bonding wire for conductor element.
JP4262216A 1992-09-30 1992-09-30 Bonding wire for semiconductor device Expired - Lifetime JP3064692B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4262216A JP3064692B2 (en) 1992-09-30 1992-09-30 Bonding wire for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4262216A JP3064692B2 (en) 1992-09-30 1992-09-30 Bonding wire for semiconductor device

Publications (2)

Publication Number Publication Date
JPH06112253A JPH06112253A (en) 1994-04-22
JP3064692B2 true JP3064692B2 (en) 2000-07-12

Family

ID=17372694

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4262216A Expired - Lifetime JP3064692B2 (en) 1992-09-30 1992-09-30 Bonding wire for semiconductor device

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Country Link
JP (1) JP3064692B2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3328135B2 (en) 1996-05-28 2002-09-24 田中電子工業株式会社 Gold alloy wire for bump formation and bump formation method
US5945065A (en) * 1996-07-31 1999-08-31 Tanaka Denshi Kogyo Method for wedge bonding using a gold alloy wire
JP4513440B2 (en) * 2004-07-15 2010-07-28 住友ベークライト株式会社 Semiconductor device
JP5403436B2 (en) * 2010-10-08 2014-01-29 タツタ電線株式会社 Ball bonding wire
JP5339101B2 (en) * 2010-10-25 2013-11-13 タツタ電線株式会社 Bump wire

Also Published As

Publication number Publication date
JPH06112253A (en) 1994-04-22

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