JPH05148627A - Sputtering apparatus - Google Patents

Abstract

PURPOSE:To provide a sputtering apparatus free from the need of consideration to the positional relationship between a sputtering cathode and a gas introducing port of a sputtering apparatus and easily capable of designing, manufacturing and maintaining the apparatus. CONSTITUTION:In an apparatus in which a vacuum chamber 1 is provided with a gas introducing port 8 for introducing a gas into its inside and a sputtering cathode 6 fitted with a target 5 opposite to a substrate in the relevant vacuum chamber, the sputtering cathode 6 is provided with the gas introducing port 8. In this way, the consideration to the relative positional relationship between the gas introducing port 8 and the cathode 6 for making the film thickness distribution and film quality certain is made needless, the designing and manufacturing of the apparatus are made easy, its readjustment after maintenance and inspection is also made needless and its treatment is made easy.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputtering apparatus for forming a thin film on a substrate.

[0002]

2. Description of the Related Art A conventional sputtering apparatus, for example, as shown in FIG. 1, has a vacuum chamber b provided with a vacuum exhaust port a.
A substrate electrode d to which the substrate c is attached and a sputtering cathode f to which a target e facing the substrate c is attached are provided, and a sputtering gas or a reaction gas is introduced to the side of the space between the substrate c and the sputtering cathode f. The cathode f is provided with a gas inlet g for preventing the space h in which the cooling medium circulates and the shield i for preventing the cathode body from being sputtered, as shown in FIG.
Is provided. Reference numeral j denotes a sputtering power source for supplying direct current or high frequency power to the cathode f.

In the sputtering operation, the inside of the vacuum chamber b is set to 1
0 ^{- 3} ~10 ^{- 7} Torr for introducing an inert gas such as Ar from the gas inlet g provided in the chamber wall of the vacuum chamber b After evacuated to a high vacuum, supplies power from the sputtering power source j to the cathode f Then, the material of the target e sputtered with cations generated by glow discharge near the target e is deposited in a thin film on the substrate c.

[0004]

As described above, in the conventional sputtering apparatus, since the sputtering cathode f and the gas introduction port g are provided at completely different places,
In designing and manufacturing the apparatus, the positional relationship between the cathode f and the inlet g must be taken into consideration so that the introduced gas is distributed as evenly as possible in front of the target e. The distribution of the film thickness formed in c deteriorates, and when forming a compound thin film, the film quality is not uniform. Further, when the cathode and the gas inlet are disassembled for maintenance and inspection, it is necessary to readjust the positional relationship between them, which makes maintenance and inspection troublesome.

It is an object of the present invention to provide a sputtering apparatus that does not require consideration of the positional relationship between the cathode and the gas inlet and is easy to design, manufacture and maintain.

[0006]

In the present invention, a vacuum chamber is provided with
A gas inlet for introducing gas into the inside thereof, and a sputtering cathode having a target facing the substrate in the vacuum chamber are provided, and by providing the gas inlet in the sputtering cathode, The above-mentioned purpose is achieved.

[0007]

[Action] The vacuum chamber 10 ^{- 3} ~10 ^{- 7} Torr for introducing an inert gas such as Ar from the gas inlet port formed in a sputtering cathode After evacuated to a high vacuum, the power supply from the sputtering power source to the cathode Although the film formation on the substrate is not particularly different from the conventional apparatus, since the apparatus of the present invention is provided with the gas inlet port in the cathode, the relative positional relationship between the cathode and the gas inlet becomes constant, Even if the scale or internal structure of the vacuum chamber changes, a certain amount of gas can always flow to the front surface of the target, and there is no need to consider the positional relationship and there is no need to provide a dedicated gas inlet, which facilitates design and manufacturing. Further, even if the cathode and the gas inlet are dismantled for maintenance, the positional relationship between the two is constant and there is no need for readjustment.

[0008]

Embodiments of the present invention will be described with reference to the drawings.
In FIG. 3, reference numeral 1 denotes a vacuum chamber provided with a vacuum exhaust port 2. In the vacuum chamber 1, a substrate electrode 4 having a substrate 3 attached thereto is grounded, and a position facing the substrate 3 is provided. A sputtering cathode 6 having a target 5 attached thereto is provided. A sputtering power source 7 supplies DC or high frequency power to the cathode 6. Although such a structure is not particularly different from that of the conventional sputtering apparatus, in the present invention, the gas inlet 8 for introducing the sputtering gas or the reactive gas is provided integrally with the cathode 6, and the size of the vacuum chamber 1 and the inside thereof are provided. Even if the internal structure is changed due to the provision of a shutter, a conveying means, etc., the relative positional relationship between the cathode 6 and the gas introduction port 8 can be kept constant. A detailed example of the cathode 6 is as shown in FIG. 4, and a space in which the magnet 9 and the cooling medium flow is provided inside the cathode 6 to prevent the main body of the cathode 6 from being sputtered around the target 5. A pipe 12 for supplying a gas is provided so that the gas introduction port 8 penetrates the peripheral portion of the cathode 6 and runs along the front surface of the target 5 as shown in FIG.
Is provided, and a large number of holes are formed on the side thereof to form the gas introduction port 8. Sputtering working in the case of this embodiment is similar to that of the prior art, the vacuum chamber 1 10 ^{- 3-10 - 7}
After evacuating to a high vacuum of Torr, an inert gas such as Ar is introduced from the gas introduction port 5 provided in the cathode 6, and if necessary, a reactive gas is mixed with the inert gas and introduced. When power is supplied from 7 to the cathode 6, a film made of the material of the target 5 is formed on the substrate 3.
In the present invention, since the gas inlet 3 is provided in the cathode 6, the positional relationship between the two is constant, and even if the volume of the vacuum chamber is large or small, various mechanisms such as a shutter and a substrate transfer device are provided inside. Even if the above is provided, a certain amount of gas is allowed to flow to the front surface of the target 6 without being affected by the structure and the like, and the film thickness distribution and film quality are not changed, and even if both are disassembled for maintenance. The positional relationship is constant, there is no need to readjust, and constant film formation can be performed before and after disassembly.

[0009]

As described above, according to the present invention, since the gas inlet provided in the vacuum chamber of the sputtering apparatus is provided integrally with the sputtering cathode, the gas inlet for keeping the film thickness distribution and film quality constant is provided. Since there is no need to consider the relative positional relationship of the cathodes, the device can be easily designed and manufactured, and readjustment after maintenance and inspection is also unnecessary, which is advantageous in handling.

[Brief description of drawings]

FIG. 1 is a cutaway side view of a conventional example.

FIG. 2 is a cutaway side view of a conventional sputtering cathode.

FIG. 3 is a cutaway side view of an embodiment of the present invention.

FIG. 4 is an enlarged cross-sectional view of the main part of FIG.

5 is a cutaway plan view of FIG.

[Explanation of symbols]

1 Vacuum chamber 3 Substrate 4
Substrate electrode 5 Target 6 Sputtering cathode 8 Gas inlet 12 Pipe

Claims (2)

[Claims] 1. A gas chamber having a gas inlet for introducing gas into the vacuum chamber and a sputtering cathode having a target facing a substrate in the vacuum chamber. A sputtering apparatus comprising: a sputtering cathode. 2. The sputtering apparatus according to claim 1, wherein the gas inlet is constituted by a pipe that penetrates a peripheral portion of the sputtering cathode and supplies gas to the front surface of the target.