JPH05148071A - Holding tool for polycrystalline silicon rod - Google Patents

Holding tool for polycrystalline silicon rod

Info

Publication number
JPH05148071A
JPH05148071A JP34198691A JP34198691A JPH05148071A JP H05148071 A JPH05148071 A JP H05148071A JP 34198691 A JP34198691 A JP 34198691A JP 34198691 A JP34198691 A JP 34198691A JP H05148071 A JPH05148071 A JP H05148071A
Authority
JP
Japan
Prior art keywords
silicon
rod
adapter
drive shaft
arm
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP34198691A
Other languages
Japanese (ja)
Other versions
JP2842488B2 (en
Inventor
Katsumi Ichimura
勝己 市村
Yasuhiro Ikeda
泰弘 池田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority to JP34198691A priority Critical patent/JP2842488B2/en
Publication of JPH05148071A publication Critical patent/JPH05148071A/en
Application granted granted Critical
Publication of JP2842488B2 publication Critical patent/JP2842488B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To enable a polycrystalline silicon rod to be held effectively by ensuring a threaded hole and press screw both providing the holding function for a polycrystalline silicon rod to be avoided from the heat from the silicon rod at elevated temperatures. CONSTITUTION:The upper end of a polycrystalline silicon rod P is put into an internal adapter 26, and on engaging a press screw 46 with a threaded hole 44, a press arm 38 is rotated with a pin 42 as support so that the press part 48 at the lower end of the arm pushes inwardly the extended part 34 at the lower end of an elastic vertical wall 32a. Thus, the press force of this arm 38 moves the extended part 34 inwardly and grips the upper end of the rod P. In this way, the rod P is held with a holding tool 22, being partly heated and melted using a high-frequency induction heating coil in a high-frequency induction heating chamber, and the melt zone is moved, thus carrying out silicon single crystal growth.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、原料シリコン多結晶棒
を高周波誘導加熱コイルを用いて、部分的に加熱溶融し
その溶融帯域を移動させることによって、シリコン単結
晶成長を行うFZ法半導体単結晶製造装置に関し、特に
シリコン多結晶棒を効果的に保持することを可能とした
シリコン多結晶棒保持具に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a FZ method semiconductor single crystal for growing a silicon single crystal by partially melting a raw material silicon polycrystalline rod by using a high frequency induction heating coil and moving the melting zone. The present invention relates to a crystal manufacturing apparatus, and more particularly to a silicon polycrystal rod holder capable of effectively holding a polycrystal silicon rod.

【0002】[0002]

【従来の技術】従来、FZ法によりシリコン単結晶を製
造する場合、垂直移動機能を有する上部駆動軸の下端部
に取り付けられかつチャンバー内に位置する多結晶保持
具と、垂直移動機能を有する下部駆動軸の上端部に取り
付けられかつ該チャンバー内に位置する種結晶ホルダー
と、該チャンバー内の中間部分に設けられた高周波誘導
加熱コイルとを有する装置を用い、該多結晶保持具に原
料シリコン多結晶棒を保持せしめ、かつ種結晶ホルダー
にシリコン単結晶の種を保持せしめ、高周波誘導加熱コ
イルによりシリコン多結晶棒の一端を溶融し該種結晶に
融着して種付けした後、該高周波誘導加熱コイルとシリ
コン多結晶棒を相対的に回転させかつ軸線方向に相対移
動させ、多結晶シリコン棒を軸方向に順次帯域溶融しな
がらシリコン単結晶棒を製造することが行われている。
2. Description of the Related Art Conventionally, when a silicon single crystal is manufactured by the FZ method, a polycrystalline holder attached to the lower end of an upper drive shaft having a vertical movement function and located in a chamber, and a lower portion having a vertical movement function. Using a device having a seed crystal holder attached to the upper end of the drive shaft and located in the chamber, and a high frequency induction heating coil provided in the middle part of the chamber, the polycrystalline silicon holder is made of a raw silicon Hold the crystal rod and hold the seed of the silicon single crystal in the seed crystal holder, melt one end of the silicon polycrystal rod by the high-frequency induction heating coil, fuse it to the seed crystal, and seed it, and then perform the high-frequency induction heating. By rotating the coil and the polycrystalline silicon rod relatively and moving them relative to each other in the axial direction, the polycrystalline silicon rod is melted in the axial direction one by one while the silicon single bond It is being carried out to produce the bar.

【0003】図2に示すごとく、上記多結晶棒保持具2
の構造は、上部駆動軸4の下端部にネジ6によって固着
されかつ下方に開口する円筒状のアダプタ(通常はステ
ンレススチール製)8と、該アダプタの下端周辺部に開
穿された複数個のネジ穴10にネジ込まれかつ先端に耐
熱性の当て板14を取付けた複数個(通常は6〜8個)
の押えネジ12とよりなり、このネジ12を内方にネジ
込むことによってシリコン多結晶棒Pを当て板14によ
って挟持するようにしたものである。この当て板14の
材質は、シリコンよりも融点の高いモリブデンが通常用
いられる。
As shown in FIG. 2, the polycrystalline rod holder 2 described above is used.
The structure of is a cylindrical adapter (usually made of stainless steel) 8 fixed to the lower end of the upper drive shaft 4 by a screw 6 and opening downward, and a plurality of perforated holes around the lower end of the adapter. Plural pieces (usually 6-8 pieces) that are screwed into the screw holes 10 and have a heat-resistant pad 14 attached to the tip.
It is configured to be held by the contact plate 14 by screwing the screw 12 inward. As the material of the contact plate 14, molybdenum having a melting point higher than that of silicon is usually used.

【0004】[0004]

【発明が解決しようとする課題】図2に示した従来のシ
リコン多結晶棒保持具2を有するFZ法半導体単結晶製
造装置によって、シリコン単結晶を成長させると次のよ
うな問題が発生した。 シリコン多結晶棒保持具2が保持するシリコン多結晶
棒Pが高温(1000℃以上)となるため、ステンレス
スチール製のアダプタのネジ穴10や押えネジ12のネ
ジ構造は1度で使用不能となりその都度新しいシリコン
多結晶棒保持具2と交換する必要がある。 対角線上に位置する押えネジ12の締めつけ方のバラ
ンスが取り難くシリコン多結晶棒を保持した後、回転さ
せた場合シリコン多結晶棒の中心(芯)がある半径をも
つ円の軌跡を描いてしまう。この状態でのFZ法は非常
に困難であり、例えば単結晶の品質の不安定等の原因と
なってしまう。 FZ工程の終了近くになると、シリコン多結晶棒保持
具2に近く溶融加熱状態が位置するため、該保持具近傍
の多結晶棒が高温、ときには1000℃以上に達し、主
としてこの輻射熱によって保持具2が全体的に加熱さ
れ、その結果、熱膨張により押えねじ12の多結晶棒の
締付け力が低下して、多結晶棒Pが保持具2から脱落す
るという事故が発生する。
When the silicon single crystal is grown by the FZ method semiconductor single crystal manufacturing apparatus having the conventional silicon polycrystalline rod holder 2 shown in FIG. 2, the following problems occur. Since the silicon polycrystal rod P held by the silicon polycrystal rod holder 2 becomes high temperature (1000 ° C. or higher), the screw structure of the screw hole 10 and the holding screw 12 of the stainless steel adapter becomes unusable at one time. It is necessary to replace with a new silicon polycrystalline rod holder 2 each time. It is difficult to balance the tightening method of the holding screw 12 located on the diagonal line, and when the silicon polycrystalline rod is held and then rotated, a center (core) of the silicon polycrystalline rod draws a locus of a circle having a radius. .. The FZ method in this state is extremely difficult and causes, for example, instability of the quality of a single crystal. Near the end of the FZ process, since the molten heating state is located near the silicon polycrystalline rod holder 2, the polycrystalline rod near the holder reaches a high temperature, sometimes 1000 ° C. or higher, and the radiant heat mainly causes the holder 2 to reach a high temperature. Is entirely heated, and as a result, the tightening force of the polycrystalline rod of the cap screw 12 is reduced by thermal expansion, and the polycrystalline rod P falls off the holder 2.

【0005】本発明は、上記した従来技術に鑑みてなさ
れたもので、シリコン多結晶棒の保持機能を行うネジ穴
と押えネジを高温となるシリコン多結晶棒からの熱を極
力避けることができるようにして保持機能の耐久性の向
上を図り、シリコン多結晶棒を周囲から均一に押圧挟持
することによりシリコン多結晶棒を回転させた際、その
中心がある半径を持つ円軌道を描かないようにし、かつ
FZ工程の後半におけるシリコン多結晶棒の保持具から
の脱落を防止することができるようにしたシリコン多結
晶棒保持具を提供することを目的とする。
The present invention has been made in view of the above-mentioned prior art, and it is possible to avoid as much as possible the heat from the silicon polycrystalline rod which becomes a high temperature in the screw hole and the holding screw for holding the silicon polycrystalline rod. In this way, the durability of the holding function is improved, and when the silicon polycrystalline rod is rotated by uniformly pressing and pinching the polycrystalline silicon rod from the surroundings, the center of the circular polycrystalline rod is not drawn. In addition, it is an object of the present invention to provide a silicon polycrystal rod holder capable of preventing the silicon polycrystal rod from falling out of the holder in the latter half of the FZ step.

【0006】[0006]

【課題を解決するための手段】上記課題を解決するため
に、本発明のシリコン多結晶棒保持具においては、上部
駆動軸の下端部に固着されかつ下方に開口する円筒状の
内部アダプタと、該内部アダプタの外面側に設けられる
とともに該上部駆動軸の下端部に同様に固着されかつ下
方に開口する円筒状の外部アダプタとを有し、該内部ア
ダプタの円周側壁は複数の弾性垂下壁から形成され、そ
の下端部分が該外部アダプタの円周側壁の下端から下方
に延出して下端延出部となるように該外部アダプタの円
周側壁よりも長尺とされ、該外部アダプタの円周側壁の
外面には複数の押えアームが回動可能に枢着され、該押
えアームの上端部を外方に付勢することによって該押え
アームの下端押え部が該内部アダプタの弾性垂下壁の下
端延出部を内方に押圧し、該内部アダプタ内に収納され
るシリコン多結晶棒の上端部分を保持するようにしたも
のである。
In order to solve the above-mentioned problems, in the silicon polycrystalline rod holder of the present invention, a cylindrical internal adapter fixed to the lower end of the upper drive shaft and opening downward, A cylindrical external adapter that is provided on the outer surface side of the internal adapter and is similarly fixed to the lower end portion of the upper drive shaft and opens downward, and the circumferential side wall of the internal adapter is a plurality of elastic hanging walls. And a lower end portion thereof is extended from the lower end of the circumferential side wall of the external adapter to form a lower end extension portion, and is longer than the circumferential side wall of the external adapter. A plurality of pressing arms are rotatably and pivotally attached to the outer surface of the peripheral side wall, and the lower end pressing portion of the pressing arm is urged outward so that the lower end pressing portion of the pressing arm is elastically suspended from the elastic hanging wall of the internal adapter. Inward with bottom extension Pressure, is obtained so as to hold the upper end of the polysilicon rod to be accommodated in the internal adapter.

【0007】上記弾性垂下壁が複数対設けられ、該弾性
垂下壁の下端延出部を一つおきに該押えアームで内方に
押圧するようにするのが好ましい。この弾性垂下壁の枚
数は偶数対設けるが、例えば6対、8対、10対程度が
好ましい。
It is preferable that a plurality of pairs of the elastic hanging walls are provided, and that every other lower end extending portion of the elastic hanging wall is pressed inward by the holding arm. Although the number of the elastic hanging walls is an even number, it is preferable that the number is, for example, about 6, 8, or 10.

【0008】[0008]

【作用】本発明のシリコン多結晶棒保持具においては、
シリコン多結晶棒の上端を内部アダプタ内に入れて、押
えネジをネジ穴にネジ込むと、該押えアームはピンを支
点としてその下端押え部が弾性垂下壁の下端延出部を内
方に押すように回動する。この押えアームの押圧力によ
り該下端延出部は内方に変位し、シリコン多結晶棒の上
端を押圧挟持する。また、弾性垂下壁が耐熱性の良い高
融点金属材料で作られているときは、それらが短冊状に
垂直方向に各弾性垂下壁が分離構成されているので、F
Z工程の終期においてもこの弾性垂下壁自身はコイル接
近による誘導加熱を受けることができない。
In the silicon polycrystalline rod holder of the present invention,
When the upper end of the silicon polycrystalline rod is put into the internal adapter and the cap screw is screwed into the threaded hole, the press arm pushes the bottom extension part of the elastic hanging wall inward with the pin as a fulcrum. To rotate. The lower end extending portion is displaced inward by the pressing force of the pressing arm, and presses and holds the upper end of the silicon polycrystalline rod. Further, when the elastic hanging walls are made of a high-melting-point metal material having good heat resistance, since the elastic hanging walls are formed in a strip shape in the vertical direction, the F
Even at the end of the Z process, the elastic hanging wall itself cannot receive induction heating due to the approach of the coil.

【0009】以下に、本発明の一実施例を添付図面中、
図1に基づいて説明する。図1において、従来装置を示
す図2における部材と同一部材は同一符号で示す。
An embodiment of the present invention will be described below with reference to the accompanying drawings.
It will be described with reference to FIG. In FIG. 1, the same members as those in FIG. 2 showing the conventional apparatus are designated by the same reference numerals.

【0010】図1において、22は本発明に係るシリコ
ン多結晶棒保持具で、FZ法半導体単結晶製造装置に用
いられる。該シリコン多結晶棒保持具22は上部駆動軸
4の下端部にネジ24によって固着されかつ下方に開口
する円筒状の内部アダプタ26を有している。28は外
部アダプタで、該内部アダプタ26の外面側に設けられ
るとともに該上部駆動軸4の下端部に同様にネジ30に
よって固着されかつ下方に開口する円筒状をなしてい
る。
In FIG. 1, reference numeral 22 denotes a silicon polycrystalline rod holder according to the present invention, which is used in an FZ method semiconductor single crystal manufacturing apparatus. The silicon polycrystalline rod holder 22 has a cylindrical internal adapter 26 fixed to the lower end of the upper drive shaft 4 by a screw 24 and opening downward. Reference numeral 28 denotes an external adapter, which is provided on the outer surface side of the internal adapter 26 and is similarly fixed to the lower end portion of the upper drive shaft 4 by a screw 30 and has a cylindrical shape opening downward.

【0011】該内部アダプタ26の円周側壁32は、複
数の弾性垂下壁32aから形成され、その下端部分が該
外部アダプタの円周側壁の下端から下方に延出して、下
端延出部34となるように該外部アダプタ28の円周側
壁36よりも長尺とされている。
The circumferential side wall 32 of the inner adapter 26 is formed of a plurality of elastic hanging walls 32a, and the lower end portion thereof extends downward from the lower end of the circumferential side wall of the outer adapter to form a lower end extending portion 34. Therefore, it is longer than the circumferential side wall 36 of the external adapter 28.

【0012】該外部アダプタ28の円周側壁36の外面
には複数の押えアーム38が突出部40に設けられたピ
ン42を介して回動可能に枢着されている。該押えアー
ム38の上端部にはネジ穴44が開穿され、該ネジ穴4
4には押えネジ46がネジこまれている。
A plurality of pressing arms 38 are rotatably pivoted on the outer surface of the circumferential side wall 36 of the external adapter 28 via pins 42 provided on a projecting portion 40. A screw hole 44 is opened at the upper end of the pressing arm 38, and
A cap screw 46 is screwed into the unit 4.

【0013】該押えネジ46をネジ込むことによって該
押えアーム38の上端は外方に付勢されるとともに該押
えアーム38の下端押え部48が該内部アダプタ26の
弾性垂下壁32aの下端延出部34を内方に押圧し、該
内部アダプタ内26に収納されるシリコン多結晶棒Pの
上端部分を保持する。
The upper end of the holding arm 38 is biased outward by screwing the holding screw 46, and the lower end holding portion 48 of the holding arm 38 extends the lower end of the elastic hanging wall 32a of the internal adapter 26. The portion 34 is pressed inward to hold the upper end portion of the silicon polycrystalline rod P housed in the inner adapter 26.

【0014】上記弾性垂下壁32aは複数対設けられ、
該弾性垂下壁32aの下端延出部34を一つおきに該押
えアーム38の下端押え部48で内方に押圧するように
構成されている。この弾性垂下壁32aの枚数は偶数対
設けるが、例えば6対、8対、10対程度が好ましい。
A plurality of pairs of the elastic hanging walls 32a are provided,
Every other one of the lower end extending portions 34 of the elastic hanging wall 32a is configured to be pressed inward by the lower end pressing portion 48 of the pressing arm 38. The number of the elastic hanging walls 32a is an even number, but for example, about 6, 8, or 10 pairs are preferable.

【0015】なお、50は、該弾性垂下壁32aの下端
延出部34の内面側に設けられた耐熱性の当て板であ
る。この当て板50の材質は、シリコンよりも融点の高
い材質を用いる必要があり、モリブデンが好適である。
Reference numeral 50 denotes a heat-resistant pad plate provided on the inner surface side of the lower end extension portion 34 of the elastic hanging wall 32a. It is necessary to use a material having a melting point higher than that of silicon as the material of the pad plate 50, and molybdenum is suitable.

【0016】このような構成により、シリコン多結晶棒
Pの上端を内部アダプタ26内に入れて、押えネジ46
をネジ穴44にネジ込むと、該押えアーム38はピン4
2を支点としてその下端押え部48が弾性垂下壁32a
の下端延出部34を内方に押すように回動する。この押
えアーム38の押圧力により該下端延出部34は内方に
変位し、シリコン多結晶棒Pの上端を押圧挟持する。
With such a structure, the upper end of the silicon polycrystalline rod P is put in the internal adapter 26 and the cap screw 46 is inserted.
Is screwed into the screw hole 44, the holding arm 38 moves the pin 4
2 is a fulcrum, and the lower end pressing portion 48 has an elastic hanging wall 32a.
The lower end extending portion 34 of the above is rotated so as to be pushed inward. The lower end extension 34 is displaced inward by the pressing force of the pressing arm 38, and presses and holds the upper end of the silicon polycrystalline rod P.

【0017】このようにしてシリコン多結晶棒Pを保持
具22に保持し、チャンバー内において高周波誘導加熱
コイルを用い、部分的に加熱溶融しその溶融帯域を移動
させることによって、シリコン単結晶成長を行うと、シ
リコン多結晶Pは高温となるが、その熱は内部アダプタ
26及び外部アダプタ28の存在によって遮蔽され、押
えアーム38のネジ穴44及び押えネジ46がシリコン
多結晶棒Pから高温の熱を直接受けることは図1に示し
た従来の保持具に較べればはるかに少なくなり、それだ
け押えアーム38のネジ穴44及び押えネジ46の寿命
は延びるようになる。
In this way, the silicon single crystal rod P is held by the holder 22, and the high frequency induction heating coil is used in the chamber to partially heat and melt and move the melting zone to grow the silicon single crystal. If this is done, the temperature of the polycrystalline silicon P becomes high, but its heat is shielded by the presence of the internal adapter 26 and the external adapter 28, and the screw holes 44 and the pressing screw 46 of the pressing arm 38 heat the polycrystalline silicon rod P at high temperature. 1 is much less than that of the conventional holder shown in FIG. 1, and the life of the screw hole 44 and the holding screw 46 of the holding arm 38 is extended accordingly.

【0018】また、シリコン多結晶棒Pの保持は押えネ
ジ46をネジ込むことにより押えアーム38の下端押え
部48によって弾性垂下壁32aの下端延出部34を押
圧変位せしめて内部に位置するシリコン多結晶棒Pの上
端を保持するようにしてあるから、シリコン多結晶棒P
を保持する力は、従来のごとく押えネジによって直接シ
リコン多結晶棒の側面を押圧保持するような構成に比較
して、周囲から均一にかかるようになり、シリコン多結
晶棒Pを回転させてもその中心がある半径を持つ円軌道
を描くことはなくなる。
In order to hold the silicon polycrystalline rod P, the lower end extending portion 34 of the elastic hanging wall 32a is pressed and displaced by the lower end holding portion 48 of the holding arm 38 by screwing the holding screw 46 into the silicon located inside. Since the upper end of the polycrystalline rod P is held, the silicon polycrystalline rod P
As compared with the conventional structure in which the side surface of the silicon polycrystalline rod is directly pressed and held by the pressing screw as in the conventional case, the force is evenly applied from the surroundings, and even if the silicon polycrystalline rod P is rotated. It no longer draws a circular orbit whose center has a radius.

【0019】さらに、弾性垂下壁32aを複数対(6
対、8対、10対程度)設け、該弾性垂下壁32aの下
端延出部34を一つおきに該押えアーム38の下端押え
部48で内方に押圧することによってシリコン多結晶棒
Pを保持すると、FZ工程の後半にシリコン多結晶棒P
が高温(1000℃以上)となり、この輻射熱によって
保持具2が熱膨張をおこし、内方に押圧変位された弾性
垂下壁32aの下端延出部34に外方への膨張による力
が加わっても弾性垂下壁32a自体がスプリング作用を
有しているためにその押圧保持力は弱まることはなく、
シリコン多結晶棒Pがずり落ちるような事故は発生しな
い。また、このとき、押えアーム38によって押圧され
ていない弾性垂下壁のスプリング作用は押えアーム38
によって制限を受けないから、押えアーム38によって
押圧変位されている弾性垂下壁32aよりも大きくこの
シリコン多結晶棒Pが膨張した際の保持力の維持強化に
寄与するものである。
Further, a plurality of pairs of elastic hanging walls 32a (6
Pairs, about 8 pairs, about 10 pairs), and every other one of the lower end extending portions 34 of the elastic hanging wall 32a is pressed inward by the lower end pressing portion 48 of the pressing arm 38 to move the silicon polycrystalline rod P. If held, the silicon polycrystalline rod P will be formed in the latter half of the FZ process.
Becomes high temperature (1000 ° C. or higher), and the radiant heat causes the holder 2 to thermally expand, and even if a force due to the outward expansion is applied to the lower end extending portion 34 of the elastic hanging wall 32a that is displaced inwardly. Since the elastic hanging wall 32a itself has a spring action, its pressure holding force does not weaken,
An accident such as the silicon polycrystalline rod P sliding down does not occur. Further, at this time, the spring action of the elastic hanging wall not pressed by the pressing arm 38 is caused by the pressing arm 38.
Since it is not limited by the holding arm 38, it contributes to the maintenance and strengthening of the holding force when the silicon polycrystalline rod P expands larger than the elastic hanging wall 32a which is pressed and displaced by the holding arm 38.

【0020】[0020]

【発明の効果】以上のべたごとく、本発明によれば、シ
リコン多結晶棒の保持機能を行うネジ穴と押えネジを高
温となるシリコン多結晶棒からの熱を極力避けることが
できるから保持機能の耐久性が向上し、シリコン多結晶
棒を周囲から均一に挟持保持することができるからシリ
コン多結晶棒を回転させた際、その中心がある半径を持
つ円軌道を描くことがなくなり、単結晶の品質が安定し
た。また弾性垂下壁のスプリング作用によりFZ工程の
後半におけるシリコン多結晶棒の保持具からの脱落を防
止することができるという大きな効果が達成される。
As described above, according to the present invention, the screw hole for performing the holding function of the silicon polycrystalline rod and the holding screw can avoid the heat from the high temperature silicon polycrystalline rod as much as possible. The durability of the polycrystalline silicon rod is improved and the polycrystalline silicon rod can be evenly clamped and held from the surroundings. The quality is stable. Further, the spring effect of the elastic hanging wall achieves a great effect that it is possible to prevent the silicon polycrystalline rod from falling off the holder in the latter half of the FZ process.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明のシリコン多結晶棒保持具の一実施例を
示す断面的概略説明図である。
FIG. 1 is a schematic cross-sectional explanatory view showing an embodiment of a silicon polycrystalline rod holder of the present invention.

【図2】従来のシリコン多結晶棒保持具の一例を示す断
面的概略説明図である。
FIG. 2 is a cross-sectional schematic explanatory view showing an example of a conventional silicon polycrystalline rod holder.

【符号の説明】[Explanation of symbols]

2 従来のシリコン多結晶棒保持具 4 上部駆動軸 22 本発明のシリコン多結晶棒保持具 26 内部アダプタ 28 外部アダプタ 32a 弾性垂下壁 34 下部延出部 38 押えアーム 42 ピン 44 ネジ穴 46 押えネジ 48 下端押え部 P シリコン多結晶棒 2 Conventional silicon polycrystalline rod holder 4 Upper drive shaft 22 Silicon polycrystalline rod holder of the present invention 26 Internal adapter 28 External adapter 32a Elastic hanging wall 34 Lower extension part 38 Holding arm 42 Pin 44 Screw hole 46 Holding screw 48 Lower end holding part P Silicon polycrystalline bar

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 チャンバーと、該チャンバーの上部に設
けられた上部駆動軸と、該チャンバーの下部に設けられ
た下部駆動軸と、該チャンバー内の中間部分に設けられ
た高周波誘導加熱コイルとを具備し、該上部駆動軸の下
端部に保持具を介して保持されるシリコン多結晶棒を高
周波誘導加熱コイルを用いて部分的に加熱溶融しその溶
融帯域を移動させることによってシリコン単結晶成長を
行うFZ法半導体単結晶製造装置におけるシリコン多結
晶棒保持具であり、該上部駆動軸の下端部に固着されか
つ下方に開口する円筒状の内部アダプタと、該内部アダ
プタの外面側に設けられるとともに該上部駆動軸の下端
部に同様に固着されかつ下方に開口する円筒状の外部ア
ダプタとを有し、該内部アダプタの円周側壁は複数の弾
性垂下壁から形成され、その下端部分が該外部アダプタ
の円周側壁の下端から下方に延出して下端延出部となる
ように該外部アダプタの円周側壁よりも長尺とされ、該
外部アダプタの円周側壁の外面には複数の押えアームが
回動可能に枢着され、該押えアームの上端部を外方に付
勢することによって該押えアームの下端押え部が該内部
アダプタの弾性垂下壁の下端延出部を内方に押圧し、該
内部アダプタ内に収納されるシリコン多結晶棒の上端部
分を保持するようにしたことを特徴とするシリコン多結
晶棒保持具。
1. A chamber, an upper drive shaft provided at an upper part of the chamber, a lower drive shaft provided at a lower part of the chamber, and a high frequency induction heating coil provided at an intermediate portion in the chamber. A silicon polycrystalline rod, which is provided with a lower end portion of the upper drive shaft via a holder, is partially heated and melted by using a high frequency induction heating coil, and the melting zone is moved to grow a silicon single crystal. A silicon polycrystalline rod holder in an FZ method semiconductor single crystal manufacturing apparatus for performing, which is a cylindrical internal adapter fixed to the lower end of the upper drive shaft and opening downward, and provided on the outer surface side of the internal adapter. A cylindrical outer adapter similarly fixed to the lower end of the upper drive shaft and opening downward, the circumferential side wall of the inner adapter being formed of a plurality of elastic hanging walls. And the lower end portion is made longer than the circumferential side wall of the external adapter so as to extend downward from the lower end of the circumferential side wall of the external adapter to form a lower end extension portion. A plurality of presser arms are rotatably pivotally attached to the outer surface of the presser arm, and the lower end presser part of the presser arm extends toward the lower end of the elastic hanging wall of the internal adapter by urging the upper end part of the presser arm outward. A tool for holding a polycrystalline silicon rod, characterized in that the protruding portion is pressed inward to hold an upper end portion of the polycrystalline silicon rod housed in the internal adapter.
【請求項2】 上記弾性垂下壁が複数対設けられ、該弾
性垂下壁の下端延出部を一つおきに該押えアームで内方
に押圧するようにしたことを特徴とする請求項1記載の
シリコン多結晶棒保持具。
2. A plurality of pairs of the elastic hanging walls are provided, and every other lower end extending portion of the elastic hanging wall is pressed inward by the holding arm. Silicon polycrystalline rod holder.
JP34198691A 1991-11-28 1991-11-28 Silicon polycrystalline rod holder Expired - Lifetime JP2842488B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP34198691A JP2842488B2 (en) 1991-11-28 1991-11-28 Silicon polycrystalline rod holder

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34198691A JP2842488B2 (en) 1991-11-28 1991-11-28 Silicon polycrystalline rod holder

Publications (2)

Publication Number Publication Date
JPH05148071A true JPH05148071A (en) 1993-06-15
JP2842488B2 JP2842488B2 (en) 1999-01-06

Family

ID=18350297

Family Applications (1)

Application Number Title Priority Date Filing Date
JP34198691A Expired - Lifetime JP2842488B2 (en) 1991-11-28 1991-11-28 Silicon polycrystalline rod holder

Country Status (1)

Country Link
JP (1) JP2842488B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102586860A (en) * 2011-11-28 2012-07-18 宁夏日晶新能源装备股份有限公司 Single-crystal furnace crystal bar positioning device and single-crystal furnace using same
JP2019014641A (en) * 2017-07-11 2019-01-31 株式会社Sumco Manufacturing apparatus of silicon single crystal and manufacturing method
JP2019167254A (en) * 2018-03-22 2019-10-03 株式会社Sumco Polycrystal raw material holding tool of fz furnace

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102586860A (en) * 2011-11-28 2012-07-18 宁夏日晶新能源装备股份有限公司 Single-crystal furnace crystal bar positioning device and single-crystal furnace using same
JP2019014641A (en) * 2017-07-11 2019-01-31 株式会社Sumco Manufacturing apparatus of silicon single crystal and manufacturing method
JP2019167254A (en) * 2018-03-22 2019-10-03 株式会社Sumco Polycrystal raw material holding tool of fz furnace

Also Published As

Publication number Publication date
JP2842488B2 (en) 1999-01-06

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