JPH05136038A - Electron beam lithographic device - Google Patents
Electron beam lithographic deviceInfo
- Publication number
- JPH05136038A JPH05136038A JP3326410A JP32641091A JPH05136038A JP H05136038 A JPH05136038 A JP H05136038A JP 3326410 A JP3326410 A JP 3326410A JP 32641091 A JP32641091 A JP 32641091A JP H05136038 A JPH05136038 A JP H05136038A
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- exposure
- ultraviolet
- ultraviolet rays
- entire surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electron Beam Exposure (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、ホトレジストの露光に
用いられる電子ビーム露光装置に関するもので、特にホ
トレジストの感度向上等のため、該レジストを電子ビー
ム露光直前に紫外線により全面露光する装置に係るもの
である。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron beam exposure apparatus used for exposing a photoresist, and more particularly to an apparatus for exposing the entire surface of the photoresist with ultraviolet rays immediately before the electron beam exposure in order to improve the sensitivity of the photoresist. It is a thing.
【０００２】[0002]
【従来の技術】半導体装置（ＩＣ）の集積度の高密度化
に伴い、高解像度の電子ビーム露光装置の使用が増加し
ている。従来の電子ビーム露光装置は、露光源として
は、電子ビームのみの構造となっている。2. Description of the Related Art As the integration density of semiconductor devices (ICs) increases, the use of high resolution electron beam exposure apparatuses is increasing. The conventional electron beam exposure apparatus has a structure using only an electron beam as an exposure source.
【０００３】一般に電子ビームリソグラフィーの解像度
を上げようとすると、電子ビームのスポットを小さくす
る必要があり、そうすると必然的に描画時間が長くな
り、現実的なスループットが得られなくなる。スループ
ット向上のため、電子ビームの電流密度を増加して描画
時間を短くしようとすると、電子ビームのスポットは大
きくなり、近接効果も増加し、所望の微細加工寸法が得
られない。Generally, in order to increase the resolution of electron beam lithography, it is necessary to reduce the spot of the electron beam, which inevitably lengthens the drawing time and makes it impossible to obtain a realistic throughput. If the current density of the electron beam is increased to shorten the writing time in order to improve the throughput, the spot of the electron beam becomes large, the proximity effect also increases, and the desired fine processing dimension cannot be obtained.
【０００４】本発明者等により、ホトレジストを電子ビ
ームで露光するプロセスにおいて、ホトレジストの感度
を上げると共に近接効果を低減するため、電子ビームで
露光する直前に、紫外線でホトレジスト全面を露光する
方法が提案されている（平成3年 7月18日、特願平 3-19
9990 号参照）。すなわちこの提案は、電子ビーム露光
装置でレジストに直接描画を行う前に、あらかじめ紫外
線でレジストを全面露光し、レジストに紫外線を吸収さ
せてその感度を上げた後、この感度の上がったレジスト
を電子ビーム露光装置でパターニングするもので、描画
時間を短縮でき、スループットを向上させることができ
る。In order to increase the sensitivity of the photoresist and reduce the proximity effect in the process of exposing the photoresist with the electron beam, the present inventors have proposed a method of exposing the entire surface of the photoresist with ultraviolet rays immediately before the exposure with the electron beam. (July 18, 1991, Japanese Patent Application No. 3-19
9990). In other words, this proposal proposes that the entire surface of the resist be exposed in advance to ultraviolet rays before the resist is directly drawn by the electron beam exposure apparatus, the ultraviolet rays are absorbed by the resist to increase its sensitivity, and then the resist having the increased sensitivity is electronically changed. The patterning is performed by the beam exposure apparatus, so that the drawing time can be shortened and the throughput can be improved.
【０００５】しかしながら従来の電子ビーム露光装置で
は紫外線で全面露光を行なう工程を別に行なわなければ
ならない。そのため、全面露光工程と電子ビーム露光工
程との間に相応の移行時間を必要とし、ホトレジストの
特性に経時変化が生じる。またこの移行時間は、ウェー
ハ間で若干のバラツキがあり、したがって均一処理がで
きなかった。However, in the conventional electron beam exposure apparatus, the step of exposing the entire surface with ultraviolet rays must be performed separately. Therefore, a corresponding transition time is required between the whole surface exposure process and the electron beam exposure process, and the characteristics of the photoresist change over time. Further, this transition time had some variations among the wafers, and therefore uniform processing could not be performed.
【０００６】[0006]
【発明が解決しようとする課題】電子ビーム露光装置
で、ホトレジストにパターンを描画する工程において、
レジストの感度を上げて描画時間を短縮し、スループッ
トを向上させるためにホトレジストを紫外線を用いて全
面露光し、レジストに紫外線を吸収させてその感度を上
げた後、このレジストを電子ビーム露光装置でパターニ
ングする手段が開発され、大きな効果が得られている。In the process of drawing a pattern on a photoresist with an electron beam exposure apparatus,
To increase the sensitivity of the resist to shorten the drawing time and to improve the throughput, the photoresist is exposed to the whole surface using ultraviolet rays, the ultraviolet rays are absorbed by the resist to increase its sensitivity, and then this resist is exposed by an electron beam exposure device. Means for patterning have been developed and great effects have been obtained.
【０００７】しかしながら従来の電子ビーム露光装置
は、露光源としては電子ビームのみの構造となっている
ので、紫外線で全面露光する工程を別に行なわなければ
ならない。このため紫外線の全面露光工程から電子ビー
ム露光工程に移行するのに相応の時間を必要とし、その
間に、ホトレジストは経時変化を受ける。また移行に要
する時間は、ウェーハごとに若干の差があるので、ホト
レジストの経時変化にもバラツキが生じ、均一処理がで
きないという課題がある。However, since the conventional electron beam exposure apparatus has a structure of only an electron beam as an exposure source, it is necessary to separately perform the step of exposing the entire surface with ultraviolet rays. For this reason, it takes a certain amount of time to shift from the whole surface exposure step of ultraviolet rays to the electron beam exposure step, and during that time, the photoresist undergoes a change with time. In addition, since the time required for the transfer has a slight difference for each wafer, there is a problem that the temporal change of the photoresist also varies and uniform processing cannot be performed.
【０００８】本発明の目的は、ホトレジストを紫外線に
より全面露光した後、電子ビームにより該ホトレジスト
にパターンを露光する装置において、紫外線による全面
露光工程から電子ビームによる露光工程に移るのに要す
る時間を少なくし、その間のホトレジストの経時変化を
最少に抑えると共にウェ―ハ間の前記移行時間を同じに
し、均一な処理が可能となる電子ビーム露光装置を提供
することである。An object of the present invention is to reduce the time required to shift from the entire exposure process by ultraviolet rays to the exposure process by electron beams in an apparatus for exposing a photoresist to a pattern by ultraviolet rays and then exposing a pattern on the photoresist by electron beams. However, it is another object of the present invention to provide an electron beam exposure apparatus capable of minimizing the change with time of the photoresist during that time and making the transfer time between wafers the same so that uniform processing can be performed.
【０００９】[0009]
【課題を解決するための手段】本発明は、ホトレジスト
膜を電子ビームにより露光する電子ビーム露光装置にお
いて、前記ホトレジスト膜を紫外線により全面露光する
手段を、前記電子ビーム露光装置の真空系内に設けたこ
とを特徴とする電子ビーム露光装置である。According to the present invention, in an electron beam exposure apparatus for exposing a photoresist film with an electron beam, means for exposing the photoresist film over the entire surface with ultraviolet rays is provided in a vacuum system of the electron beam exposure apparatus. The electron beam exposure apparatus is characterized in that
【００１０】なお紫外線は、可視光の短波長端（400 nm
ないし380 nm）から200 nm程度の波長範囲である。Ultraviolet light is the short wavelength end of visible light (400 nm
To 380 nm) to about 200 nm.
【００１１】[0011]
【作用】図１に例示するように、本発明の電子ビーム露
光装置においては、ウェーハローダ１１にセットされた
ウェーハは、真空系内を搬送され、紫外線露光エリア５
において、紫外線による全面露光が行われた後、ステー
ジ２に移動し、電子ビームによるパターン描画が行なわ
れる。これにより紫外線による全面露光工程から電子ビ
ーム露光工程に移るに要する時間を少なくし、その間の
ホトレジストの経時変化を最少にすると共にウェーハ間
の前記移行時間を同じにできる。As illustrated in FIG. 1, in the electron beam exposure apparatus of the present invention, the wafer set in the wafer loader 11 is transported in the vacuum system and the ultraviolet exposure area 5
In FIG. 7, after the entire surface is exposed with ultraviolet rays, the substrate is moved to the stage 2 and a pattern is drawn with an electron beam. This makes it possible to reduce the time required to move from the entire surface exposure process using ultraviolet rays to the electron beam exposure process, minimize the change over time in the photoresist during that time, and make the transfer time between wafers the same.
【００１２】[0012]
【実施例】以下本発明の一実施例を、図面を参照して説
明する。図１は、本発明による電子ビーム露光装置の構
成を示す概略図である。該装置は、電子ビーム露光装置
本体２０、紫外線による全面露光手段２１等から構成さ
れる。電子ビーム露光装置本体２０は、電子ビーム鏡筒
１、ステージ２及びイオンポンプ３等から成る公知の電
子ビーム露光装置で、電子ビーム鏡筒内の真空度は、例
えば 5×10-7Ｔorr程度である。紫外線による全面露光
手段２１は、紫外線光学ユニット４、紫外線露光エリア
５、石英ガラス６、第１紫外線露光仕切り弁７、及び第
２紫外線露光仕切り弁８等からなる。紫外線光学ユニッ
ト４は、水銀ランプ及び光学部材を内蔵し、ｇ線（436
nm）、ｈ線（405 nm）及びｉ線（365 nm）が組み合わさ
った強さ均一の平行光線を、石英ガラス６を通して放射
する。第１及び第２紫外線露光仕切り弁７及び８は、隣
接するウェーハローダ１１側及び電子ビーム露光装置本
体側に、それぞれ紫外線が漏洩しないようにする。電子
ビーム露光仕切り弁９は、電子ビーム鏡筒１内の高真空
（例えば 5×10-7Ｔorr ）領域と紫外線露光エリア５内
の低真空（例えば10-3〜10-5Ｔorr ）領域との真空仕切
り弁である。ウェーハローダ１１は、複数枚の被処理ウ
ェーハを収納したキャリヤ（carrier ）を外部より取り
込み載置する。ターボ分子ポンプ１２は、ウェーハロー
ダ１１及び紫外線露光エリア５内の真空排気に使用さ
れ、またウェーハローダ仕切り弁１０は、ウェーハロー
ダ１１と紫外線露光エリア５との間を、所望により真空
遮断する弁である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic diagram showing the structure of an electron beam exposure apparatus according to the present invention. The apparatus is composed of an electron beam exposure apparatus main body 20, an entire surface exposure means 21 using ultraviolet rays, and the like. The electron beam exposure apparatus main body 20 is a known electron beam exposure apparatus including an electron beam lens barrel 1, a stage 2, an ion pump 3, etc., and the degree of vacuum inside the electron beam lens barrel is, for example, about 5 × 10 −7 Torr. is there. The whole surface exposure means 21 using ultraviolet rays includes an ultraviolet optical unit 4, an ultraviolet exposure area 5, quartz glass 6, a first ultraviolet exposure sluice valve 7, a second ultraviolet exposure sluice valve 8 and the like. The ultraviolet optical unit 4 has a mercury lamp and an optical member built-in, and g-line (436
nm), h rays (405 nm) and i rays (365 nm) are combined to emit parallel rays of uniform intensity through the quartz glass 6. The first and second UV exposure sluice valves 7 and 8 prevent UV rays from leaking to the adjacent wafer loader 11 side and electron beam exposure apparatus body side, respectively. The electron beam exposure sluice valve 9 has a high vacuum (for example, 5 × 10 −7 Torr) region in the electron beam lens barrel 1 and a low vacuum (for example, 10 −3 to 10 −5 Torr) region in the ultraviolet exposure region 5. It is a vacuum gate valve. The wafer loader 11 takes in and mounts a carrier containing a plurality of wafers to be processed from the outside. The turbo molecular pump 12 is used for vacuum evacuation of the wafer loader 11 and the ultraviolet exposure area 5, and the wafer loader partition valve 10 is a valve that shuts off the vacuum between the wafer loader 11 and the ultraviolet exposure area 5 as desired. is there.
【００１３】ポジ型レジストを塗布した被処理ウェーハ
は、 1枚ずつウェーハローダ１１から、ウェーハローダ
仕切り弁１０及び第１紫外線露光仕切り弁７を通って紫
外線露光エリア５に搬送される。紫外線光学ユニット４
内の水銀ランプによって得られた平行光線を、石英ガラ
ス６を通して、例えば照射エネルギー 0.171 mＪ／c
m2 、 3秒間、被処理ウェーハ全面に渡って露光する。
紫外線による全面露光後、被処理ウェーハは、第２紫外
線露光仕切り弁及び電子ビーム露光仕切り弁を通って、
ステージ２上に搬送載置され、電子ビームによりパター
ンが描画される。この一連の動作は自動機構により進め
られる。The processed wafers coated with the positive type resist are conveyed one by one from the wafer loader 11 to the ultraviolet exposure area 5 through the wafer loader partition valve 10 and the first ultraviolet exposure partition valve 7. UV optical unit 4
The collimated light beam obtained by the mercury lamp inside is passed through the quartz glass 6 and the irradiation energy is 0.171 mJ / c, for example.
Exposure is performed over the entire surface of the wafer to be processed for m 2 for 3 seconds.
After the whole surface exposure with ultraviolet rays, the processed wafer passes through the second ultraviolet exposure sluice valve and the electron beam exposure sluice valve,
It is carried on the stage 2 and a pattern is drawn by an electron beam. This series of operations is advanced by an automatic mechanism.
【００１４】上記電子ビーム露光装置では、露光源とし
て電子ビーム以外に紫外線照射源を有しているので、紫
外線による全面露光工程を別の装置で行なう手間が省
け、紫外線による全面露光工程と電子ビーム露光工程と
の間の移行時間を最少にすることができるため、その間
のホトレジストの経時変化は無視できる。またウェーハ
間での前記移行時間も同じになり、電子ビーム露光装置
上から、電子ビーム及び紫外線全面露光の条件を同時に
設定し、処理を均一にすることができる。Since the electron beam exposure apparatus has an ultraviolet ray irradiation source as an exposure source in addition to the electron beam, it is possible to save the trouble of performing the whole surface exposure step by the ultraviolet ray with another apparatus, and the whole surface exposure step by the ultraviolet ray and the electron beam. Since the transition time to and from the exposure step can be minimized, the change with time of the photoresist during that time can be ignored. Further, the transfer time between the wafers is also the same, and the conditions of electron beam and ultraviolet whole-surface exposure can be set at the same time from the electron beam exposure apparatus to make the processing uniform.
【００１５】なお本装置は、レジストを紫外線による全
面露光直後に、電子ビームにより露光を行なうものであ
るが、その機構は、電子ビームによる露光直後に、紫外
線により全面露光を行なう電子ビーム露光装置の機構と
基本的に同じであり、後者の場合においても使用可能で
ある。In this apparatus, the resist is exposed by the electron beam immediately after the entire surface exposure by the ultraviolet ray. The mechanism is that of the electron beam exposure apparatus that performs the entire surface exposure by the ultraviolet ray immediately after the exposure by the electron beam. The mechanism is basically the same and can be used in the latter case.
【００１６】[0016]
【発明の効果】本発明では、電子ビーム露光装置の真空
系内に、紫外線による全面露光手段を設けたので、紫外
線による全面露光工程から電子ビームによる露光工程に
移るのに要する時間を最少にし、その間のホトレジスト
の経時変化を無視できる程度に抑えると共に、ウェーハ
間の前記移行時間を同じにし、均一な処理が可能となる
電子ビーム露光装置を提供することができた。According to the present invention, since the whole surface exposure means by ultraviolet rays is provided in the vacuum system of the electron beam exposure apparatus, the time required to shift from the whole surface exposure step by ultraviolet rays to the exposure step by electron beams is minimized, It has been possible to provide an electron beam exposure apparatus capable of suppressing the change with time of the photoresist during that period to a negligible level, making the transfer time between wafers the same, and performing uniform processing.
【図１】本発明による電子ビーム露光装置の構成を示す
概略図である。FIG. 1 is a schematic diagram showing a configuration of an electron beam exposure apparatus according to the present invention.
１ 電子ビーム鏡筒 ２ ステージ ３ イオンポンプ ４ 紫外線光学ユニット ５ 紫外線露光エリア １１ ウェーハローダ １２ ターボ分子ポンプ ２０ 電子ビーム露光装置本体 ２１ 紫外線による全面露光手段 DESCRIPTION OF SYMBOLS 1 Electron beam column 2 Stage 3 Ion pump 4 Ultraviolet optical unit 5 Ultraviolet exposure area 11 Wafer loader 12 Turbo molecular pump 20 Electron beam exposure apparatus main body 21 Full exposure means by ultraviolet rays
Claims (1)
る電子ビーム露光装置において、前記ホトレジスト膜を
紫外線により全面露光する手段を、前記電子ビーム露光
装置の真空系内に設けたことを特徴とする電子ビーム露
光装置。1. An electron beam exposure apparatus for exposing a photoresist film with an electron beam, wherein means for exposing the photoresist film over the entire surface with ultraviolet rays is provided in a vacuum system of the electron beam exposure apparatus. Exposure equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3326410A JPH05136038A (en) | 1991-11-14 | 1991-11-14 | Electron beam lithographic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3326410A JPH05136038A (en) | 1991-11-14 | 1991-11-14 | Electron beam lithographic device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05136038A true JPH05136038A (en) | 1993-06-01 |
Family
ID=18187483
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3326410A Pending JPH05136038A (en) | 1991-11-14 | 1991-11-14 | Electron beam lithographic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05136038A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0841681A2 (en) * | 1996-11-07 | 1998-05-13 | Nikon Corporation | Exposure apparatus and exposure method |
| GB2368716A (en) * | 2000-10-03 | 2002-05-08 | Advantest Corp | Manufacturing system for a wafer combining an optical exposure apparatus and an electron beam exposure apparatus |
| JP2016086042A (en) * | 2014-10-23 | 2016-05-19 | 東京エレクトロン株式会社 | Substrate processing method, program, computer storage medium, and substrate processing system |
-
1991
- 1991-11-14 JP JP3326410A patent/JPH05136038A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0841681A2 (en) * | 1996-11-07 | 1998-05-13 | Nikon Corporation | Exposure apparatus and exposure method |
| EP0841681A3 (en) * | 1996-11-07 | 1999-05-12 | Nikon Corporation | Exposure apparatus and exposure method |
| GB2368716A (en) * | 2000-10-03 | 2002-05-08 | Advantest Corp | Manufacturing system for a wafer combining an optical exposure apparatus and an electron beam exposure apparatus |
| GB2368716B (en) * | 2000-10-03 | 2003-01-29 | Advantest Corp | Semiconductor device manufacturing system and electron beam exposure apparatus |
| US6764925B2 (en) | 2000-10-03 | 2004-07-20 | Advantest Corporation | Semiconductor device manufacturing system and electron beam exposure apparatus |
| JP2016086042A (en) * | 2014-10-23 | 2016-05-19 | 東京エレクトロン株式会社 | Substrate processing method, program, computer storage medium, and substrate processing system |
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