JPH0513260A - Formation of thin film capacitor - Google Patents
Formation of thin film capacitorInfo
- Publication number
- JPH0513260A JPH0513260A JP16273091A JP16273091A JPH0513260A JP H0513260 A JPH0513260 A JP H0513260A JP 16273091 A JP16273091 A JP 16273091A JP 16273091 A JP16273091 A JP 16273091A JP H0513260 A JPH0513260 A JP H0513260A
- Authority
- JP
- Japan
- Prior art keywords
- film
- tantalum
- lower electrode
- forming
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は小型，高密度回路の素子
として使用されるコンデンサとの形成方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a capacitor used as an element of a small size and high density circuit.
【０００２】[0002]
【従来の技術】近年、電子回路は小型化，高密度化，高
精度化が要求され、それに対応して抵抗，コンデンサな
どを半導体技術を利用して基板に作り込む薄膜ハイブリ
ッドＩＣ技術の開発が行なわれている。コンデンサ素子
の誘電体としては、比較的誘電率が高く、安定な五酸化
タンタル（Ｔａ2Ｏ5）が使用されている。2. Description of the Related Art In recent years, electronic circuits are required to be smaller, higher in density and higher in accuracy, and in response to this demand, development of thin film hybrid IC technology in which resistors, capacitors and the like are formed on a substrate using semiconductor technology has been developed. Has been done. As the dielectric of the capacitor element, tantalum pentoxide (Ta 2 O 5 ) having a relatively high dielectric constant and stable is used.
【０００３】従来、この種の薄膜コンデンサは図２
（ａ）〜（ｄ）のようにして形成していた。以下、その
形成方法について説明する。Conventionally, a thin film capacitor of this type is shown in FIG.
It was formed as in (a) to (d). The method for forming the same will be described below.
【０００４】まず、図２（ａ）のように、アルミナセラ
ミック基板１上に下部電極２を成膜し、パターニングす
る。その上に、図２（ｂ）のように金属酸化物の誘電体
薄膜３を形成する。その後、金属酸化物の組成のずれを
改良するために酸素中で熱処理を行ない、図２（ｃ）の
ように改質誘導体薄膜４を形成し、最後に、図２（ｄ）
のように上部電極５を形成していた。First, as shown in FIG. 2A, a lower electrode 2 is formed on an alumina ceramic substrate 1 and patterned. On top of that, a dielectric thin film 3 of metal oxide is formed as shown in FIG. Then, heat treatment is performed in oxygen to improve the deviation of the composition of the metal oxide to form a modified derivative thin film 4 as shown in FIG. 2C, and finally, as shown in FIG.
The upper electrode 5 was formed as described above.
【０００５】[0005]
【発明が解決しようとする課題】このような従来の形成
方法では、誘電体薄膜３の成膜時、下部電極２の端面に
おいて段切れを起こさぬように、下部電極２の厚みは通
常１５００Å程度としている。このため、アルミナセラ
ミック基板１の表面粗さは約５００Å以下としなければ
ならず、グレーズド処理基板や表面研磨基板が使われて
いるが、これが薄膜コンデンサのコストを押し上げる要
因となっている。In the conventional forming method as described above, the thickness of the lower electrode 2 is usually about 1500 Å so as not to cause step breakage at the end face of the lower electrode 2 when the dielectric thin film 3 is formed. I am trying. For this reason, the surface roughness of the alumina ceramic substrate 1 must be about 500 Å or less, and a glazed substrate or a surface-polished substrate is used, which is a factor that increases the cost of the thin film capacitor.
【０００６】本発明は上記課題を解決するもので、表面
処理を必要としない基板を使用して、薄膜コンデンサの
コストダウンを実現することを目的としている。The present invention has been made to solve the above problems, and an object of the present invention is to reduce the cost of a thin film capacitor by using a substrate which does not require surface treatment.
【０００７】[0007]
【課題を解決するための手段】本発明は上記目的を達成
するために、基板上に下部電極を形成した後、金属膜を
スパッタにより成膜する工程と、前記工程に引きつづき
同一ターゲットを酸素を含む雰囲気でスパッタすること
により金属酸化膜を成膜する工程と、前記金属膜と金属
酸化膜をレジスト工程とエッチング工程とによりパター
ニングする工程と、前記金属膜と金属酸化膜を酸素中で
熱処理し前記金属膜表面を酸化すると同時に金属酸化膜
の組成のずれを改良する工程とを有することを課題解決
手段としている。In order to achieve the above object, the present invention has a step of forming a lower electrode on a substrate and then forming a metal film by sputtering. A step of forming a metal oxide film by sputtering in an atmosphere containing, a step of patterning the metal film and the metal oxide film by a resist step and an etching step, and a heat treatment of the metal film and the metal oxide film in oxygen. Then, the step of oxidizing the surface of the metal film and simultaneously improving the deviation of the composition of the metal oxide film are the means for solving the problems.
【０００８】[0008]
【作用】本発明は上記した課題解決手段により、下部電
極上に形成した金属膜により、基板の凹凸の形状が金属
酸化膜の下面に及ぶことがなくなり、基板の平滑度を向
上させる加工工程を追加する必要がなくなる。According to the present invention, the metal film formed on the lower electrode prevents the unevenness of the substrate from reaching the lower surface of the metal oxide film by the above-mentioned means for solving the problem, and improves the smoothness of the substrate. No need to add.
【０００９】[0009]
【実施例】以下、本発明の一実施例の薄膜コンデンサ形
成方法について、図１（ａ）〜（ｄ）を参照しながら説
明する。EXAMPLES A method of forming a thin film capacitor according to an example of the present invention will be described below with reference to FIGS.
【００１０】まず、図１（ａ）のように、アルミナセラ
ミック基板６上に下部電極７を成膜し、パターニングす
る。その後、スパッタ装置（図示せず）によりタンタル
（金属膜）８を成膜し、同一装置に酸素ガスを添加して
反応性スパッタリングを行ない、図１（ｂ）のように、
五酸化タンタル（金属酸化膜）９を成膜し、その後、タ
ンタル８と五酸化タンタル９を１回のレジスト工程およ
び複数のエッチング工程によりパターニングを施す。つ
ぎに、五酸化タンタル９のＴａ2Ｏ5からの組成のずれを
改良するため、酸素中で熱処理し、図１（ｃ）のよう
に、改質された五酸化タンタル１０を形成する。このと
き、同時にタンタル８の表面が酸化されてタンタル酸化
膜１１を形成する。このタンタル酸化膜１１は次工程の
上部電極１２との絶縁膜となる。最後に、図１（ｄ）の
ように上部電極１２を成膜し、パターニングを行う。First, as shown in FIG. 1A, a lower electrode 7 is formed on an alumina ceramic substrate 6 and patterned. After that, a tantalum (metal film) 8 is formed by a sputtering device (not shown), and oxygen gas is added to the same device to perform reactive sputtering. As shown in FIG. 1 (b),
Tantalum pentoxide (metal oxide film) 9 is formed, and then tantalum 8 and tantalum pentoxide 9 are patterned by one resist process and a plurality of etching processes. Next, in order to improve the compositional deviation of the tantalum pentoxide 9 from Ta 2 O 5 , it is heat-treated in oxygen to form the modified tantalum pentoxide 10 as shown in FIG. 1 (c). At this time, the surface of the tantalum 8 is simultaneously oxidized to form the tantalum oxide film 11. This tantalum oxide film 11 becomes an insulating film with the upper electrode 12 in the next step. Finally, as shown in FIG. 1D, the upper electrode 12 is formed and patterned.
【００１１】以上の実施例から明らかなように本発明に
よれば、下部電極７と、反応成スパッタにより形成され
る五酸化タンタル（誘電体）９との間にタンタル８を挿
入でき、アルミナセラミック基板６表面の凹凸を平滑化
できる。As is apparent from the above embodiments, according to the present invention, tantalum 8 can be inserted between the lower electrode 7 and the tantalum pentoxide (dielectric) 9 formed by reactive sputtering, and the alumina ceramic The unevenness on the surface of the substrate 6 can be smoothed.
【００１２】[0012]
【発明の効果】以上の実施例から明らかなように本発明
によれば、基板上に下部電極を形成した後、金属膜をス
パッタにより成膜する工程と、前記工程に引きつづき同
一ターゲットを酸素を含む雰囲気でスパッタすることに
より金属酸化膜を成膜する工程と、前記金属膜と金属酸
化膜をレジスト工程とエッチング工程とによりパターニ
ングする工程と、前記金属膜と金属酸化膜を酸素中で熱
処理し前記金属膜表面を酸化すると同時に金属酸化膜の
組成のずれを改良する工程とを有するから、下部電極と
誘電体としての金属酸化物との間に同一金属の金属膜を
成膜でき、下部電極の一部とすることができて基板表面
の凹凸の影響を緩和でき、基板の加工工程が不要となっ
てコスト低減ができる。As is apparent from the above embodiments, according to the present invention, a step of forming a metal film by sputtering after forming a lower electrode on a substrate and an oxygen target of the same target following the steps described above are used. A step of forming a metal oxide film by sputtering in an atmosphere containing, a step of patterning the metal film and the metal oxide film by a resist step and an etching step, and a heat treatment of the metal film and the metal oxide film in oxygen. And the step of improving the composition deviation of the metal oxide film at the same time as oxidizing the metal film surface, a metal film of the same metal can be formed between the lower electrode and the metal oxide as a dielectric. Since it can be used as a part of the electrode, the influence of irregularities on the substrate surface can be mitigated, and the substrate processing step is not required, and the cost can be reduced.
【図１】（ａ）〜（ｄ）本発明の一実施例の薄膜コンデ
ンサの形成方法の各工程を示す図1A to 1D are diagrams showing respective steps of a method for forming a thin film capacitor according to an embodiment of the present invention.
【図２】（ａ）〜（ｄ）従来の薄膜コンデンサの形成方
法の各工程を示す図2A to 2D are diagrams showing respective steps of a conventional method for forming a thin film capacitor.
６ アルミナセラミック基板（基板） ７ 下部電極 ８ タンタル(金属膜) ９ 五酸化タンタル（金属酸化膜） １０ 改質された五酸化タンタル（改質された金属酸化
膜）6 Alumina ceramic substrate (substrate) 7 Lower electrode 8 Tantalum (metal film) 9 Tantalum pentoxide (metal oxide film) 10 Modified tantalum pentoxide (modified metal oxide film)
Claims (1)
をスパッタにより成膜する工程と、前記工程に引きつづ
き同一ターゲットを酸素を含む雰囲気でスパッタするこ
とにより金属酸化膜を成膜する工程と、前記金属膜と金
属酸化膜をレジスト工程とエッチング工程とによりパタ
ーニングする工程と、前記金属膜と金属酸化膜を酸素中
で熱処理し前記金属膜表面を酸化すると同時に金属酸化
膜の組成のずれを改良する工程とを有する薄膜コンデン
サの形成方法。Claim: What is claimed is: 1. A step of forming a metal film by sputtering after forming a lower electrode on a substrate, and a metal target is formed by sputtering the same target in an atmosphere containing oxygen. A step of forming an oxide film, a step of patterning the metal film and the metal oxide film by a resist step and an etching step, and a step of heat-treating the metal film and the metal oxide film in oxygen to oxidize the surface of the metal film at the same time. A method of forming a thin film capacitor, which comprises a step of improving a composition deviation of a metal oxide film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16273091A JPH0513260A (en) | 1991-07-03 | 1991-07-03 | Formation of thin film capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16273091A JPH0513260A (en) | 1991-07-03 | 1991-07-03 | Formation of thin film capacitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0513260A true JPH0513260A (en) | 1993-01-22 |
Family
ID=15760182
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16273091A Pending JPH0513260A (en) | 1991-07-03 | 1991-07-03 | Formation of thin film capacitor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0513260A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6358857B1 (en) * | 1999-07-23 | 2002-03-19 | Micron Technology, Inc. | Methods of etching insulative materials, of forming electrical devices, and of forming capacitors |
-
1991
- 1991-07-03 JP JP16273091A patent/JPH0513260A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6358857B1 (en) * | 1999-07-23 | 2002-03-19 | Micron Technology, Inc. | Methods of etching insulative materials, of forming electrical devices, and of forming capacitors |
| US6528429B2 (en) | 1999-07-23 | 2003-03-04 | Micron Technology, Inc. | Methods of etching insulative materials, of forming electrical devices, and of forming capacitors |
| US6753262B2 (en) | 1999-07-23 | 2004-06-22 | Micron Technology, Inc. | Methods of etching insulative materials, of forming electrical devices, and of forming capacitors |
| US7037848B2 (en) | 1999-07-23 | 2006-05-02 | Micron Technology, Inc. | Methods of etching insulative materials, of forming electrical devices, and of forming capacitors |
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