JPH05123955A - Crystal piece polishing device - Google Patents

Crystal piece polishing device

Info

Publication number
JPH05123955A
JPH05123955A JP31334291A JP31334291A JPH05123955A JP H05123955 A JPH05123955 A JP H05123955A JP 31334291 A JP31334291 A JP 31334291A JP 31334291 A JP31334291 A JP 31334291A JP H05123955 A JPH05123955 A JP H05123955A
Authority
JP
Japan
Prior art keywords
crystal wafer
crystal
face
base
polishing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP31334291A
Other languages
Japanese (ja)
Inventor
Toshio Shibata
田 寿 男 柴
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nihon Dempa Kogyo Co Ltd
Original Assignee
Nihon Dempa Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nihon Dempa Kogyo Co Ltd filed Critical Nihon Dempa Kogyo Co Ltd
Priority to JP31334291A priority Critical patent/JPH05123955A/en
Publication of JPH05123955A publication Critical patent/JPH05123955A/en
Pending legal-status Critical Current

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  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)

Abstract

PURPOSE:To rationalize the machining process of bevel polishing and improve work efficiency so as to heighten productivity by providing a polishing machine brought into sliding contact with a crystal wafer positioned on a base so as to polish the edge of intersection between a main face and a side face. CONSTITUTION:Crystal wafers 14 are respectively attached to the plate face on the opposite side to the contact face of an attached block 12, that is, onto its holding face, using fused paraffin or the like. The attached block 12 is then attracted to a base 11 by magnetic force and positioned correctly by the step difference of the inclined face. In this state, the crystal wafer 14 is brought into sliding contact with the peripheral edge part of a disc like polishing machine 15, for instance, to polish and remove the desired edges and to form the side end parts of the crystal wafer 14 into slant faces, thus performing the so-called bevel machining.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、水晶片の端部を斜めに
切除するベバル加工を行う水晶片の研磨装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a crystal piece polishing apparatus for performing a Beval process for obliquely cutting an end portion of a crystal piece.

【0002】[0002]

【従来の技術】たとえば水晶振動子の製造工程では、人
工水晶の結晶から短冊状の水晶ウェハーを切り出し、こ
の水晶ウェハーから個々の水晶振動子に相当するブラン
クを得るようにしている。従来、この種の加工工程で
は、たとえばATカットの水晶振動子を製造する場合、
人工水晶を結晶軸に対して所定角度に切断して所望の共
振周波数に対応した厚みの板状の水晶ウエハーを得る。
この水晶ウェハー1は、たとえば第3図に示すような形
状の長さ30mm、幅10mm、厚さ0.5mm程度の大きさ
の短冊状の板片である。そして、水晶ウエハー1の幅方
向の側端部を斜めに除去して傾斜面に成形し、いわゆる
ベバル加工を行う。このベバル加工では第4図に示すよ
うに板面を鋸歯状に成形した基台2の傾斜面2aにそれ
ぞれ水晶ウェハー1の主面1aを溶融パラフィン等を用
いて接着する。そして、たとえば第5図に示すように水
晶ウエハー1を接着した基台2を研磨盤、たとえば回転
砥石に摺接させて水晶ウェハー1の主面と側面の交わる
側端部、すなわち稜1bを研磨して除去し、いわゆるベ
バル加工を行う。なお同様の作業を4回繰り返して、第
6図に示すように水晶ウェハー1の幅方向の各稜2bを
研磨して角度5°程度のナイフエッジ状1cに成形す
る。そして幅方向の側端部をナイフエッジ状1cに成形
した複数枚の水晶ウェハー1の主面1aを順次に接着し
て積み重ね、数十枚を貼り合わせる。そして多数のブレ
ード(帯鋸歯)を切断幅に対応した間隔で並行に張設し
たマルチブレード切断機を用いて、上述のように貼り合
わせた水晶ウェハー2を主面の長手方向に対して所定の
間隔で、たとえば2mmの幅で主面に直角方向に同時に切
断する。次に所定の幅に切断した水晶ウェハー2を加熱
してパラフィンを溶融し、個々の水晶片に分離して水晶
ブランクを得る。この水晶ブランクの長手方向は切断前
の水晶ウエハー2の幅方向に相当し、かつ長手方向の両
端部にベバル加工を施したものである。そして水晶ブラ
ンクから表面に付着したパラフィンを除去し、たとえば
研磨剤とともに円筒容器に収納して該円筒容器を回転駆
動してその全周の角部を除去して外周を円みを帯びた形
状に研磨する。そして、水晶ブランクの主面に真空蒸着
等によって励振電極を形成して保持部材で保持するとと
もに電極を外部へ導出し、気密な容器に封止して水晶振
動子が完成する。
2. Description of the Related Art For example, in a crystal resonator manufacturing process, a strip-shaped crystal wafer is cut out from a crystal of artificial quartz, and a blank corresponding to each crystal resonator is obtained from the crystal wafer. Conventionally, in this type of processing step, for example, when manufacturing an AT-cut crystal unit,
The artificial quartz is cut at a predetermined angle with respect to the crystal axis to obtain a plate-shaped quartz wafer having a thickness corresponding to a desired resonance frequency.
This crystal wafer 1 is a strip-shaped plate piece having a length of 30 mm, a width of 10 mm, and a thickness of about 0.5 mm, for example, as shown in FIG. Then, the lateral end of the crystal wafer 1 in the width direction is obliquely removed to form an inclined surface, and so-called Beval processing is performed. In this Beval process, as shown in FIG. 4, the main surface 1a of the crystal wafer 1 is bonded to the inclined surface 2a of the base 2 whose plate surface is formed in a sawtooth shape by using molten paraffin or the like. Then, for example, as shown in FIG. 5, the base 2 to which the crystal wafer 1 is adhered is brought into sliding contact with a polishing plate, for example, a rotary grindstone to polish the side end where the main surface and the side surface of the crystal wafer 1 intersect, that is, the ridge 1b. Then, the so-called Beval process is performed. The same operation is repeated four times to polish each edge 2b in the width direction of the crystal wafer 1 as shown in FIG. 6 to form a knife edge shape 1c having an angle of about 5 °. Then, the main surfaces 1a of a plurality of crystal wafers 1 each having a side edge in the width direction formed into a knife-edge shape 1c are sequentially bonded and stacked, and several tens of them are bonded. Then, using a multi-blade cutting machine in which a large number of blades (saw blades) are stretched in parallel at intervals corresponding to the cutting width, the crystal wafer 2 bonded as described above is moved in a predetermined direction in the longitudinal direction of the main surface. Simultaneously cut at intervals, for example a width of 2 mm, in the direction perpendicular to the main surface. Next, the crystal wafer 2 cut into a predetermined width is heated to melt the paraffin and separated into individual crystal pieces to obtain crystal blanks. The longitudinal direction of this crystal blank corresponds to the width direction of the crystal wafer 2 before cutting, and both ends of the crystal blank are beveled. Then, the paraffin adhering to the surface of the quartz blank is removed, and the paraffin is stored in a cylindrical container together with an abrasive, for example, and the cylindrical container is rotatably driven to remove the corners of the entire circumference to make the outer circumference rounded. Grind. Then, an excitation electrode is formed on the main surface of the crystal blank by vacuum vapor deposition or the like, held by a holding member, and the electrode is led out to the outside and sealed in an airtight container to complete the crystal oscillator.

【0003】このようにすればベバル加工によってブラ
ンクの端部の厚みを薄く成形するようにしているので振
動を板面の中央部分に閉じこめて良好な振動特性を得る
ことができる。しかしながら、このようなものでは特に
水晶ウェハーの幅方向の稜を研磨して除去するベバル加
工の作業がめんどうで生産性を著しく低下させる。すな
わち、厚さ0.5mm程度の板状の水晶ウェハーの幅方向
の稜を角度5°程度のナイフエッヂ状に研磨して成形し
なければならない。しかして、このような加工工程では
厚みの薄い水晶ウェハーの側端部を斜めに研磨しなけれ
ばならないので割れ、欠け等の損傷を発生し易く生産工
程におけるネックになり易い問題があった。
In this way, since the thickness of the end portion of the blank is formed thin by the Beval process, vibration can be confined in the central portion of the plate surface and good vibration characteristics can be obtained. However, in such a case, the Beval process work of polishing and removing the ridge in the width direction of the quartz wafer is troublesome, and the productivity is remarkably reduced. That is, a ridge in the width direction of a plate-shaped crystal wafer with a thickness of about 0.5 mm must be ground and shaped into a knife edge with an angle of about 5 °. However, in such a processing step, since the side end portion of the thin crystal wafer has to be obliquely polished, there is a problem that damage such as cracking and chipping is likely to occur and becomes a bottleneck in the production process.

【0004】[0004]

【発明が解決しようとする課題】本発明は、上記の事情
に鑑みてなされたもので、水晶片の加工工程におけるベ
バル加工を合理化することによって格別の熟練も必要と
せず、製造時の不良の発生も少なく、生産性を高めるこ
とができる水晶片の研磨装置を提供することを目的とす
るものである。
SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and requires no special skill by rationalizing the Beval process in the process of processing the crystal piece, and the defect at the time of manufacturing can be eliminated. It is an object of the present invention to provide a polishing device for a crystal piece, which is less likely to occur and which can enhance productivity.

【0005】[0005]

【課題を解決するための手段】本発明は、基台に着脱可
能に傾けて並設した複数の貼り着けブロックの前面に水
晶ウエハーを貼り着けて、この水晶ウエハーを研磨盤に
摺接させて側端部を研磨することを特徴とするものであ
る。
SUMMARY OF THE INVENTION According to the present invention, a crystal wafer is attached to the front surface of a plurality of attachment blocks which are removably inclined and arranged side by side on a base, and the crystal wafer is slidably brought into contact with a polishing plate. It is characterized in that the side edges are polished.

【0006】[0006]

【実施例】以下、本発明の一実施例を図1に示す斜視
図、図2に示す研磨作業中の様子を示す側面図を参照し
て詳細に説明する。図中11は、鉄等の磁性体からなる
基台で、その一側面に一定の間隔で傾斜面11aを設け
て断面を鋸歯状に形成している。そして、各傾斜面11
aに着脱自在に貼り着けブロック12を設けている。各
貼り着けブロック12は同一寸法で、たとえば黄銅、硬
質のアルミ等の非磁性体からなり、概略直方体に成形し
て基台11との接触面にそれぞれ複数の磁石13を極性
を揃えて埋め込んでいる。そして貼り着けブロック12
の上記接触面の反対側の板面、すなわち保持面には溶融
パラフィン等を用いて、それぞれ水晶ウエハー14を貼
り着けるようにしている。そして基台11の貼り着けブ
ロック12を保持する面は、断面形状を鋸歯状に成形し
ているので貼り着けブロック12を磁力によって基台1
1に吸着させ、かつ傾斜面の段差によって正確に位置決
めさせることができる。そして、この状態で、たとえば
円板状の研磨盤15の周縁部に水晶ウエハー14を摺接
させることにより所望の稜を研磨して除去し、水晶ウエ
ハー14の側端部を斜面に成形して、いわゆるベバル加
工を行う。なおこの場合、貼り着けブロック12は研磨
盤15の回転方向に対して摩擦抵抗によって基台11の
段差に押圧される向きに保持するようにしている。そし
て磁力に抗して基台11から貼り着けブロック12を引
きはがして反転させ、再び基台11に吸着させれば水晶
ウエハー14の反対側の稜を研磨することができる。す
なわち貼り着けブロック12へ水晶ウエハー14の貼り
着け作業を1回行えば2つの稜をベバル加工することが
でき、2回の貼り着け作業を行うことによって水晶ウエ
ハー14の全ての側端部、すなわち4つの稜を研磨する
ことができる。したがって従来の作業工程では貼り着け
作業を4回行なっていたが、上記実施例によれば貼り着
け作業は2回だけでよく、貼り着け作業の回数を半減で
き作業性を著しく向上することができる。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described in detail below with reference to a perspective view shown in FIG. 1 and a side view showing a state during a polishing operation shown in FIG. In the figure, 11 is a base made of a magnetic material such as iron, and one side surface thereof is provided with inclined surfaces 11a at regular intervals to form a sawtooth cross section. And each inclined surface 11
A block 12 is detachably attached to a. Each attachment block 12 has the same size and is made of a non-magnetic material such as brass or hard aluminum, and is molded into a substantially rectangular parallelepiped, and a plurality of magnets 13 are embedded in the contact surface with the base 11 with the same polarity. There is. And sticking block 12
The crystal wafer 14 is attached to the plate surface opposite to the contact surface, that is, the holding surface by using molten paraffin or the like. Since the surface of the base 11 that holds the attachment block 12 is formed in a sawtooth cross-section, the attachment block 12 is magnetically applied to the base 1.
It is possible to make it adhere to No. 1 and accurately position it by the step of the inclined surface. Then, in this state, for example, the crystal wafer 14 is slidably contacted with the peripheral edge of the disk-shaped polishing disk 15 to polish and remove a desired edge, and the side end of the crystal wafer 14 is formed into an inclined surface. , So-called Beval processing. In this case, the attachment block 12 is held in a direction in which it is pressed against the step of the base 11 by frictional resistance with respect to the rotation direction of the polishing plate 15. Then, the attachment block 12 is peeled off from the base 11 against the magnetic force, inverted, and adsorbed to the base 11 again, so that the ridge on the opposite side of the crystal wafer 14 can be polished. That is, if the sticking operation of the crystal wafer 14 to the sticking block 12 is performed once, two ridges can be beveled, and by performing the sticking work twice, all side end portions of the crystal wafer 14, that is, Four edges can be polished. Therefore, the pasting work was performed four times in the conventional work process, but according to the above-mentioned embodiment, the pasting work is required only twice, the number of the pasting work can be reduced by half, and the workability can be remarkably improved. ..

【0007】このようにすれば、たとえば第4図に示す
ような波板状の治具等を用いてベバル研磨を行うものに
比して2倍以上の効率で作業を行え、著しく作業性を向
上することができる。そして、予め多数の貼り着けブロ
ックを用意してそれぞれに水晶ウエハーを貼り着けてお
くことによって、1台の基台に対して順次に貼り着けブ
ロックだけを交換して作業を進めることができ作業効率
も良好である。さらに上記実施例によれば研磨盤に対面
する基台のほぼ全面に水晶ウエハーを配設することが可
能であり、一定面積の基台に対して最大数の水晶ウエハ
ーを保持して研磨加工を行うことができ作業能率を向上
できる利点がある。
In this way, the work can be performed with efficiency more than twice as high as that in the case where the Beval polishing is performed using a corrugated plate jig as shown in FIG. 4, and the workability is remarkably increased. Can be improved. Then, by preparing a large number of attachment blocks in advance and attaching the crystal wafers to each of them, only the attachment blocks can be sequentially replaced with respect to one base, and the work can proceed. Is also good. Further, according to the above-mentioned embodiment, it is possible to dispose the crystal wafer on almost the entire surface of the base facing the polishing plate, and the maximum number of crystal wafers can be held on the base of a certain area for polishing. There is an advantage that it can be performed and work efficiency can be improved.

【0008】[0008]

【発明の効果】以上詳述したように、本発明によればベ
バル研磨の加工工程を合理化でき作業効率も良好で、生
産性を高めることができる水晶片の研磨装置を提供する
ことができる。
As described above in detail, according to the present invention, it is possible to provide a crystal piece polishing apparatus which can streamline the processing steps of Beval polishing, have good working efficiency, and can enhance productivity.

【0009】[0009]

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例を示す斜視図である。FIG. 1 is a perspective view showing an embodiment of the present invention.

【図2】図1に示す実施例のベバル加工を示す側面図で
ある。
FIG. 2 is a side view showing bevel processing of the embodiment shown in FIG.

【図3】水晶ウエハーの一例を示す斜視図である。FIG. 3 is a perspective view showing an example of a crystal wafer.

【図4】従来のベバル加工の治具を示す側面図である。FIG. 4 is a side view showing a conventional bevel processing jig.

【図5】従来のベバル加工を示す斜視図である。FIG. 5 is a perspective view showing a conventional Beval process.

【図6】従来のベバル加工によって得られた水晶ウエハ
ーの斜視図である。
FIG. 6 is a perspective view of a quartz wafer obtained by conventional Beval processing.

【符号の説明】[Explanation of symbols]

11 基台 11a 傾斜面 12 貼り着けブロック 13 磁石 14 水晶ウエハー 11 Base 11a Inclined Surface 12 Attachment Block 13 Magnet 14 Crystal Wafer

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】一側面に同一傾斜角の複数の傾斜面を成形
した基台と、 この基台の傾斜面に着脱自在に並設した複数の貼り着け
ブロックと、 各貼り着けブロックの前面に貼り着けた水晶ウエハー
と、 上記基台によって位置決めされた上記水晶ウエハーに摺
接して主面と側面の交わる稜を研磨する研磨盤と、 を具備することを特徴とする水晶片の研磨装置。
1. A base having a plurality of inclined surfaces having the same inclination angle formed on one side surface, a plurality of attachment blocks detachably arranged on the inclined surface of the base, and a front surface of each attachment block. 1. A crystal piece polishing apparatus comprising: a bonded crystal wafer; and a polishing plate for slidingly contacting the crystal wafer positioned by the base to polish an edge where a main surface and a side surface intersect with each other.
JP31334291A 1991-10-31 1991-10-31 Crystal piece polishing device Pending JPH05123955A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP31334291A JPH05123955A (en) 1991-10-31 1991-10-31 Crystal piece polishing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31334291A JPH05123955A (en) 1991-10-31 1991-10-31 Crystal piece polishing device

Publications (1)

Publication Number Publication Date
JPH05123955A true JPH05123955A (en) 1993-05-21

Family

ID=18040097

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31334291A Pending JPH05123955A (en) 1991-10-31 1991-10-31 Crystal piece polishing device

Country Status (1)

Country Link
JP (1) JPH05123955A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008036737A (en) * 2006-08-03 2008-02-21 Epson Toyocom Corp Manufacturing method for optical substrate
US7559825B2 (en) 2006-12-21 2009-07-14 Memc Electronic Materials, Inc. Method of polishing a semiconductor wafer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008036737A (en) * 2006-08-03 2008-02-21 Epson Toyocom Corp Manufacturing method for optical substrate
US7559825B2 (en) 2006-12-21 2009-07-14 Memc Electronic Materials, Inc. Method of polishing a semiconductor wafer

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