JPH05121540A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To reduce the number of processes when an isolation wall is formed of an insulator and to form the isolation wall having a desired width by a method wherein an ion beam whose focus has controlled is injected into a semiconductor substrate while its effective accelerating energy is being changed and the insulator is formed. CONSTITUTION:For example, oxygen ions are implanted into a silicon substrate at an accelerating energy E0=ca. 200 KeV; an SOI structure by a buried oxide film 11 and a surface silicon layer 12 is formed. An oxygen ion beam 10b whose focus has been controlled is injected into the SOI structure at an accelerating energy E1 which is nearly equal to E0; it is scanned by using a pattern which finally becomes an isolation wall 13; the lower part of isolation wall 13 is formed. After that, a scanning operation on the same pattern is repeated at an accelerating energy E2 as E2<E1; the isolation wall 13, by polycrystalline silicon, which has reached the surface of the surface silicon layer 12 is formed. Consequently, the isolation wall 13 can be formed by only one oxidation process, the number of production processes can be reduced, and the isolation wall 13 having a desired width can be obtained.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device, and more particularly to a method of manufacturing a semiconductor device in which elements such as IC and power IC are separated by dielectric isolation.

[0002]

2. Description of the Related Art In a method of manufacturing a semiconductor device, element isolation by a dielectric isolation method allows a width of an isolation region to be smaller than that of a junction isolation method (pn junction isolation method) and is relatively easy to design. It is a feature. FIG. 6 shows one of the conventional dielectric isolation methods, SDB (Silicon Direct Bondin).
g) is a diagram showing a method for manufacturing a dielectric isolation substrate by the method, in which 1 and 3 are semiconductor substrates, 2a and 2b are oxide films formed on the surfaces of the semiconductor substrates 1 and 3, and 4 is obtained by etching. Etching region, 5 is an insulating film, 6
Is a resist and 7 is polysilicon.

Next, a manufacturing method will be described. Figure 6 (a)
At the surface of the semiconductor substrates 1 and 3, the oxide film 2 is formed.
a and 2b are formed. Next, as shown in FIG. 6 (b), after the oxide films 2a and 2b are subjected to heat treatment to be joined and integrated,
The surface of the semiconductor substrate 3 is rigidly polished to a thickness of 2000
A silicon layer having a thickness of angstrom to 1 μm is formed. Then, the semiconductor substrate 3 is etched, silicon is removed, and the etching region 4 is formed as shown in FIG. 6C.
Further, an insulating layer 5 is formed on the surface and side surfaces of the semiconductor substrate 3 by thermal oxidation or oxide film deposition as shown in FIG. 6 (d). Then, the sidewall and bottom of the etching region 4 are protected by a resist 6 as shown in FIG. 6 (e), the oxide film 5 is removed, and the sidewall of the semiconductor substrate 3 is removed as shown in FIG. 6 (f). After leaving the oxide film 5, as shown in FIG. 6 (g), it is filled with polysilicon 7 to manufacture a dielectric isolation substrate.

FIG. 7 is a cross-sectional view showing a state of IC isolation by a conventional dielectric isolation method. In the figure, 8 is a logic element (8a is a bipolar transistor, 8b is a vertical IG).
BT, 8c is a MOS transistor, and 50 is a semiconductor substrate. Here, the bipolar transistor 8a, the lateral IGBT 8b, and the MOS transistor 8c are integrated at a high density with each isolation region separated.

FIG. 8 shows the power I according to the conventional dielectric isolation method.
It is sectional drawing which showed the separation condition of C, and in the figure, 9
Is a power element (vertical thyristor), 100 is a silicon single crystal bonding surface, 101 is a gate electrode, 102 is a cathode electrode, and 103 is an anode electrode. Here, the MOS transistor 8c is formed in the IC portion, and the vertical thyristor 9 is formed in the power portion. A part of the bottom surface separating wall which is directly below the thyristor 9 is not formed, and the silicon single crystal bonding surface 100 replaces it. A current flows between the cathode electrode 102 on the front surface and the anode electrode 103 on the back surface by applying a current to the gate electrode 101.

[0006]

Since the conventional method of manufacturing a semiconductor device is configured as described above, the SOI (si
After forming the structure, it is necessary to perform processing such as formation of isolation trench, formation of side wall oxide film, burying of polysilicon and flattening, and the number of steps is large. Since it has a multiple structure with polysilicon, there is a problem that there is a certain limit for high-density integration.

The method of manufacturing a semiconductor device according to the present invention is made in order to solve the above-mentioned problems, and the number of steps required for forming a partition wall is reduced and it is suitable for high density integration. It is an object to provide a method for manufacturing a semiconductor device.

[0008]

According to a method of manufacturing a semiconductor device according to the present invention, a predetermined region of a semiconductor substrate is irradiated with an ion beam of a substance that forms an insulator in the semiconductor substrate, and the semiconductor substrate is irradiated with the ion beam. Forming a buried insulating layer, and then focusing control of an ion beam of a substance forming an insulator in the semiconductor substrate to scan the beam in a predetermined pattern on the buried insulating layer; The accelerating energy of 1 is decreased appropriately and then the pattern is repeatedly scanned to form a separation wall on the pattern.

Further, in the method of manufacturing a semiconductor device according to the present invention, a predetermined region of the semiconductor substrate is irradiated with an ion beam of a substance forming an insulator in the semiconductor substrate to embed the insulating layer embedded in the semiconductor substrate. Then, the ion beam of the substance forming the insulator in the semiconductor substrate is focus-controlled to scan the beam in a predetermined pattern on the buried insulating layer through an absorber whose thickness is controlled. The separation wall is formed on a predetermined pattern by repeating the above process.

Further, in the method for manufacturing a semiconductor device according to the present invention, a predetermined region of the semiconductor substrate is irradiated with an ion beam of a substance forming an insulator in the semiconductor substrate to embed the insulating layer embedded in the semiconductor substrate. And then focus control an ion beam of a substance forming an insulator in the semiconductor substrate on a minute region of the semiconductor substrate on the buried insulating layer melted by scanning of a focus-controlled local heating source. Then, scanning is performed to form a separation wall in the minute area.

Further, in the method of manufacturing a semiconductor device according to the present invention, a convex region is formed on one surface of the first semiconductor substrate by etching, selective epitaxial growth or the like, and the convex region and the first semiconductor substrate are formed. One surface of the second semiconductor substrate is oxidized, and then a concave region that fits with the convex region is formed on one surface of the second semiconductor substrate by etching, selective epitaxial growth, or the like. By fitting one surface to one surface of the second semiconductor substrate and joining them by heat treatment, and then polishing the other surface of the second semiconductor substrate to the convex region of the first semiconductor substrate. , Forms a separation wall.

Further, in the method of manufacturing a semiconductor device according to the present invention, a desired insulating region is formed on one surface of the first semiconductor substrate, and then the desired insulating region is formed on one surface of the second semiconductor substrate. A layer is formed, and one surface of the first semiconductor substrate is bonded to one surface of the second semiconductor substrate by heat treatment, and then the other surface of the second semiconductor substrate is bonded to the first semiconductor substrate. The insulating region of the substrate is polished so that the insulating region serves as a partition wall.

[0013]

In the method of manufacturing a semiconductor device according to the present invention, when the focus-controlled oxygen ion beam is injected into silicon, an insulating layer of silicon oxide is formed.
Insulation separation wall can be formed by only one oxidation step,
In manufacturing, the number of steps can be reduced, and the width of the separation wall depends on the width of the focus-controlled oxygen ion beam.
A separating wall having a desired width can be obtained.

In the method of manufacturing a semiconductor device according to the present invention, since the focus-controlled oxygen ion beam forms an insulator in silicon, the isolation wall of the insulator can be formed by only one oxidation step. Moreover, since the number of steps can be reduced and the width of the separation wall depends on the width of the focus-controlled oxygen ion beam, the separation wall with a desired width can be obtained, and the focus can be achieved while passing through the thickness-controlled absorber. Since the controlled oxygen ion beam scans a predetermined pattern on the buried insulating layer, it is not necessary to sequentially change the energy of the ion beam, and irradiation can be performed by fixing the ion beam at an appropriate value. Becomes

Further, in the method of manufacturing a semiconductor device according to the present invention, the focus-controlled oxygen ion beam is simultaneously scanned on the melted minute region by scanning the focus-controlled local heating source, so that the ions are melted. Is rapidly diffused to form a separation wall, the energy of the ion beam does not need to be changed sequentially, and scanning can be performed by fixing the ion beam at an appropriate value, which facilitates the operation.

Further, in the method for manufacturing a semiconductor device according to the present invention, since the fine convex regions formed on the semiconductor substrate in advance are used as the separation walls, the separation walls having a fine width can be obtained. Therefore, the degree of integration can be improved.

Further, in the method of manufacturing a semiconductor device according to the present invention, the separation wall is formed beforehand on one of the semiconductor substrates by a focus-controlled ion beam, and this is joined to the other semiconductor substrate with a surface oxide film. Since only the surface of one of the semiconductor substrates is polished, the steps of etching, embedding, and flattening are unnecessary, and the number of steps can be greatly reduced.

[0018]

DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a cross-sectional view showing a method of manufacturing a semiconductor device according to an embodiment of the present invention. In the figure, 10a is an oxygen ion beam, 10b is a focus-controlled oxygen ion beam, and 11 is a bottom isolation substrate. Oxide film, 12
Is a surface silicon layer, and 13 is a separating wall.

The method of manufacturing the semiconductor device shown in FIG.
SIMOX (separation by impl) in which oxygen is ion-implanted at a high concentration into a silicon substrate to form a SiO ₂ film (embedded oxide film 11) in the silicon substrate for complete dielectric isolation.
When used in the manufacturing process of an anted oxygen substrate, for example, “Solid State Technology Japan Edition February
1991 pp.23-29 ", a high-quality SOI structure with few defects can be formed. Here, as shown in FIG. 1 (a), the acceleration energy E ₀ = 200 ke.
Oxygen ions are implanted at about V to form an SOI structure in which the buried oxide film 11 has a film thickness of 4500 angstroms and the surface silicon layer 12 has a film thickness of about 2000 angstroms.

The SOI structure thus obtained is shown in FIG.
As shown in FIG. 5, the focus-controlled oxygen ion beam 10b is injected with an acceleration energy E ₁ which is substantially equal to E ₀ , and scanning is performed in a pattern that finally becomes the separation wall 13 to form the lower part of the separation wall 13. Thereafter, as shown in FIG. 1 (c), the scanning on the same pattern is repeated with the acceleration energy E ₂ where E ₂ <E ₁ , and finally, as shown in FIG. 1 (d),
A silicon oxide separation wall 13 that reaches the surface of the surface silicon layer 12 is formed. At this time, it is effective to perform high-temperature annealing at 1250 ° C. or higher during irradiation for the purpose of recovering the crystallinity of the silicon crystal amorphized by the lattice defects generated during the oxygen ion implantation.

As described above, since the focus-controlled oxygen ion beam 10b is used in the above-described embodiment, the separation wall 13 can be formed by only one oxidation step.
The number of steps can be reduced. Further, since the width of the separation wall 13 depends on the width of the focus-controlled oxygen ion beam 10b, the separation wall 13 having a desired width can be obtained.

FIG. 2 is a sectional view showing a method of manufacturing a semiconductor device according to a second embodiment of the present invention. In the figure, the same reference numerals as those in FIG. 1 designate the same parts, and 14 is made of metal or ceramic. It is a wedge-shaped absorber.

In FIG. 2A, a focus-controlled oxygen ion beam 10b is injected into a predetermined region of the SOI substrate manufactured by the process described in FIG. 1A, and its acceleration energy E ₀ is It is almost equal to the energy when forming a SIMOX substrate. Next, the pattern scanning is performed by the absorber 14.
Focus controlled oxygen ion beam 10 through
b. At this time, the absorber 14 temporally moves so that the thicker one first and the thinner one successively crosses the focus-controlled oxygen ion beam 10b line, so that the effective energy of the oxygen ions reaching the semiconductor substrate is increased. Will be reduced. Thus
As shown in FIGS. 2 (b) and 2 (c), the effective energies of the ions reaching the semiconductor substrate are sequentially changed, so that the separation wall 13 is formed over the entire depth of the surface silicon layer 12. Become.

Also in the second embodiment, the focus-controlled oxygen ion beam 10b is used as in the first embodiment.
Since the separation wall 13 is used only by one oxidation step,
Can be formed, and the number of manufacturing steps can be reduced. In addition, the width of the separation wall 13 has a focus-controlled oxygen ion beam 10.
Since it depends on the width of b, the separating wall 13 having a desired width can be obtained. Furthermore, since the pattern is scanned by the focus-controlled oxygen ion beam through the absorber 14 having a variable thickness, the surface silicon layer 12 of the surface silicon layer 12 is fixed while the acceleration energy of the focus-controlled oxygen ion beam 10b is fixed. The separating wall 13 can be formed over the entire depth.

FIG. 3 is a perspective view showing a method of manufacturing a semiconductor device according to a third embodiment of the present invention. In the figure, the same reference numerals as those in FIG. 1 denote the same parts, and 15 denotes a laser as a local heating source. Light or electron beam, and 16 is a melted region melted by the irradiation of the laser beam (electron beam) 15.

FIG. 3 corresponds to the step of forming the side separation wall 13 using the focus-controlled oxygen ion beam 10b on the SIMOX substrate described in the first and second embodiments. In FIG. 3 (a), the pattern is scanned with the focus-controlled laser beam 15 to melt the melting region 16 corresponding to the width of the separation wall 13 and the focus-controlled oxygen ion beam 10b is applied to the melting region 16. Injecting. Then, as shown in FIG. 3 (b), oxygen ions rapidly diffuse in the melting region 16 to form the separation wall 13.

As described above, in the third embodiment, the pattern of the separation wall 13 is formed by simultaneously scanning the focus region of the oxygen ion beam 10b on the melting region melted by the laser beam 15 which is the local heating source. Therefore, it is not necessary to sequentially change the energy of the oxygen ion beam,
Since it is sufficient to fix the irradiation at an appropriate value and perform irradiation, the operation becomes easy.

FIG. 4 is a sectional view showing a method of manufacturing a semiconductor device according to a fourth embodiment of the present invention.
Numerals 0 and 30 are semiconductor substrates, 21 is a fine width convex region formed on the semiconductor substrate 20, 22 is an insulating region, 31 is formed on the semiconductor substrate 30, and fits the dimensions of the convex region 21. It is a concave region which is a pattern.

First, as shown in FIG. 4A, a convex region 21 having a fine width is formed on the semiconductor substrate 20. The forming process includes a method of removing the peripheral portion by etching or a direct forming by selective epitaxial growth. next,
As shown in FIG. 4B, the convex region 21 and the semiconductor region 2
An insulating region 22 is formed on the surface of 0 by thermal oxidation.

Here, as shown in FIG. 4 (c), a semiconductor substrate 30 different from the semiconductor substrate 20 having a concave region 31 formed in a pattern that fits the dimensions of the convex region 21 is formed. prepare. Subsequently, as shown in FIG. 4D, the convex region 21 and the concave region 31 are fitted to each other, and the semiconductor substrates 20 and 30 are bonded at the Si—SiO ₂ surface by a high temperature heat treatment at 1250 ° C. or higher. Finally, as shown in FIG. 4 (e), the semiconductor substrate 3
Insulating region 2 from the side where 0 recessed region 31 is not formed
The silicon layer is rigidly polished to the upper surface of the second convex region 21.

As described above, in the fourth embodiment, since the fine convex regions 21 formed in advance on the semiconductor substrate are oxidized to form the separation walls, the separation walls having a fine width can be obtained. Therefore, the degree of integration can be improved.

FIG. 5 is a sectional view showing a method of manufacturing a semiconductor device according to a fifth embodiment of the present invention.
Reference numerals 0 and 50 are semiconductor substrates, 41 is a separation wall formed on the semiconductor substrate 40, and 51 is an oxide film formed on the semiconductor substrate 50.

In FIG. 5A, a focus-controlled oxygen ion beam is injected into one surface of the semiconductor substrate 40,
A step of forming the separation wall 41 by the method shown in the first, second or third embodiment will be shown. Here, a semiconductor substrate 50 is prepared, and as shown in FIG. 5 (b), an oxide film 5 of about 4000 angstroms is formed on the surface thereof by a normal thermal oxidation method.
1 is formed, and then the semiconductor substrates 40 and 50 are bonded by performing high-temperature heat treatment at 1250 ° C. or higher in a state where the separation walls 41 and the oxide film 51 are in close contact with each other. Finally, the semiconductor substrate 40 is rigidly polished from the side where the separation wall 41 is not formed to the upper surface of the separation wall 41.

As described above, in the fifth embodiment, the steps of etching, embedding, and flattening are unnecessary, and the number of steps can be greatly reduced.

In the first, second, third and fifth embodiments, the oxygen ion beam was irradiated when the buried insulating layer was formed in the semiconductor substrate. However, when the semiconductor substrate is irradiated,
Any material such as nitrogen ion may be used as long as it forms an insulator in the semiconductor substrate, and the same effect as described above is obtained.

[0036]

As described above, according to the method of manufacturing a semiconductor device of the present invention, a predetermined region of a semiconductor substrate is irradiated with an ion beam of a substance that forms an insulator in the semiconductor substrate. Form a buried insulating layer in the substrate, then
Focus control of an ion beam of a substance forming an insulator in a semiconductor substrate is performed to scan the beam in a predetermined pattern on the embedded insulating layer, and the acceleration energy of the ion beam is gradually decreased appropriately. By forming the separation wall on the pattern by repeating the scanning of the pattern, the separation wall can be formed by only one oxidation step, and the number of steps in manufacturing can be reduced. Since the width of the separation wall depends on the width of the focus-controlled oxygen ion beam, by obtaining the separation wall with a desired width, it is possible to form a finer separation wall and obtain a highly integrated semiconductor device. effective.

Further, according to the method for manufacturing a semiconductor device of the present invention, a predetermined region of the semiconductor substrate is irradiated with an ion beam of a substance forming an insulator in the semiconductor substrate to be embedded in the semiconductor substrate. An insulating layer is formed, and then an ion beam of a substance that forms an insulator in a semiconductor substrate is focus-controlled to scan the beam in a predetermined pattern on the embedded insulating layer, and an absorber having a controlled thickness. The separation wall is formed on a predetermined pattern by repeating the process while passing through, so that the separation wall can be formed by only one oxidation step, and the number of steps in manufacturing can be reduced. Width depends on the width of the focus-controlled oxygen ion beam, so that by obtaining a separation wall having a desired width, a finer separation wall can be formed and a highly integrated semiconductor device can be obtained. , It is not necessary to sequentially change the energy of the ion beam, it is sufficient irradiation fixed at an appropriate value, there is an effect that the operation is facilitated.

Further, according to the method of manufacturing a semiconductor device of the present invention, a predetermined region of the semiconductor substrate is irradiated with an ion beam of a substance forming an insulator in the semiconductor substrate to be embedded in the semiconductor substrate. An insulating layer is formed, and then an ion beam of a substance that forms an insulator in the semiconductor substrate is applied to a minute region of the semiconductor substrate on the buried insulating layer that is melted by scanning a focus-controlled local heating source. Since the separation wall is formed in the minute region by performing focus control and scanning, the minute region is melted, and at the same time, the focus-controlled ions are rapidly diffused in the melting region to form the separation wall. Need not be changed sequentially,
Since it is sufficient to fix the irradiation at an appropriate value and irradiate, there is an effect that the operation becomes easy.

Further, according to the method of manufacturing a semiconductor device of the present invention, a convex region is formed on one surface of the first semiconductor substrate by etching or selective epitaxial growth, and the convex region and the first semiconductor are formed. After oxidizing one surface of the substrate and then forming a recessed region that fits with the projection region on one surface of the second semiconductor substrate by etching or selective epitaxial growth, the first semiconductor substrate One surface of the second semiconductor substrate and one surface of the second semiconductor substrate are fitted to each other and bonded by heat treatment, and further the other surface of the second semiconductor substrate is polished to a convex region of the first semiconductor substrate. By this, since the separation wall is formed, it is possible to obtain a separation wall having a fine width, and it is possible to improve the degree of integration.

Further, according to the method of manufacturing a semiconductor device of the present invention, a desired insulating region is formed on one surface of the first semiconductor substrate, and then the desired insulating region is formed on one surface of the second semiconductor substrate. Of the first semiconductor substrate and one surface of the second semiconductor substrate are joined by heat treatment, and the other surface of the second semiconductor substrate is attached to the first semiconductor substrate. Since the insulating region of the substrate is polished and the insulating region is used as a partition wall, the steps of etching, embedding, and flattening are not required, and the number of steps can be significantly reduced.

According to the method of manufacturing a semiconductor device of the present invention, since the same type of ions are used in the method of using the focus-controlled oxygen ion beam, SI
After manufacturing the MOX substrate, it is possible to carry out subsequent steps,
This has the effect of reducing the total number of steps, and since the width of the separation wall depends on the width of the focus-controlled ion beam, it is possible to further reduce the film thickness with the improvement of focus control technology and increase the degree of integration. There is an effect that is.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing a method of manufacturing a semiconductor device according to an embodiment of the present invention.

FIG. 2 is a sectional view showing a method of manufacturing a semiconductor device according to a second embodiment of the present invention.

FIG. 3 is a perspective view showing a method of manufacturing a semiconductor device according to a third embodiment of the present invention.

FIG. 4 is a cross-sectional view showing the method of manufacturing a semiconductor device according to the fourth embodiment of the present invention.

FIG. 5 is a sectional view showing a method of manufacturing a semiconductor device according to a fifth embodiment of the present invention.

FIG. 6 is a cross-sectional view showing a conventional method of manufacturing a semiconductor device.

FIG. 7 is a sectional view showing a separation state of an IC manufactured by a conventional dielectric separation method.

FIG. 8: Power I produced by a conventional dielectric isolation method
It is sectional drawing which shows the isolation | separation state of C.

[Explanation of symbols]

 1 Semiconductor Substrate 2a Insulating Layer 2b Insulating Layer 3 Semiconductor Substrate 4 Etching Area 5 Oxide Film 6 Resist 7 Polysilicon 8a Logic Element 8b Logic Element 8c Logic Element 9 Power Element 10a Oxygen Ion Beam 10b Focus Controlled Oxygen Ion Beam 13 Separation Wall 14 Absorber 15 Laser Light or Electron Beam 16 Melting Region 20 Semiconductor Substrate 21 Convex Region 22 Insulating Region 30 Semiconductor Substrate 31 Recessed Region 40 Semiconductor Substrate 41 Separating Wall 50 Semiconductor Substrate 51 Oxide Layer 100 Si Single Crystal Bonding Surface 101 Gate Electrode 102 Cathode electrode 103 Anode electrode

Claims (5)

[Claims] 1. A method of manufacturing a semiconductor device including a step of forming a dielectric isolation region for element isolation on a semiconductor substrate, wherein the step comprises forming an insulator in a predetermined region of the semiconductor substrate within the semiconductor substrate. Irradiating an ion beam of a substance to be formed to form a buried insulating layer in the semiconductor substrate, and focusing control of an ion beam of a substance forming an insulator in the semiconductor substrate to perform the buried insulating of the beam Scanning a predetermined pattern on the layer, appropriately decreasing the acceleration energy of the ion beam sequentially, and then repeatedly scanning the pattern to form a separation wall on the pattern. A method of manufacturing a semiconductor device, comprising: 2. A method of manufacturing a semiconductor device, which includes a step of forming a dielectric isolation region for element isolation on a semiconductor substrate, wherein the step comprises forming an insulator in a predetermined region of the semiconductor substrate within the semiconductor substrate. Irradiating an ion beam of a substance to be formed to form a buried insulating layer in the semiconductor substrate, and focusing control of an ion beam of a substance forming an insulator in the semiconductor substrate to perform the buried insulating of the beam A method of manufacturing a semiconductor device, comprising the step of forming a separation wall on a predetermined pattern by repeatedly scanning a predetermined pattern on a layer while passing through an absorber whose thickness is controlled. 3. A method of manufacturing a semiconductor device, which includes the step of forming a dielectric isolation region for element isolation on a semiconductor substrate, wherein the step comprises forming an insulator in a predetermined region of the semiconductor substrate within the semiconductor substrate. Forming an embedded insulating layer in the semiconductor substrate by irradiating an ion beam of a substance to be formed, and a minute region of the semiconductor substrate on the embedded insulating layer melted by scanning a focus-controlled local heating source And a step of forming an isolation wall in the minute region by focus-controlling and scanning an ion beam of a substance forming an insulator in the semiconductor substrate. 4. A dielectric isolation region for element isolation is provided.
Manufacturing method of semiconductor device including process of forming on semiconductor substrate
The method comprises the steps of etching one surface of the first semiconductor substrate.
Or the selective epitaxial growth
And forming the convex region and one surface of the first semiconductor substrate
And oxidizing the convex region on one surface of the second semiconductor substrate.
Etching or selective epitaxial etching
Forming by growth or the like, one surface of the first semiconductor substrate and the second semiconductor substrate
The process of mating with one surface and joining by heat treatment
And the other surface of the second semiconductor substrate on the first semiconductor substrate.
To form the separation wall by polishing up to the convex area of
A method of manufacturing a semiconductor device, characterized by comprising
Law. 5. A method of manufacturing a semiconductor device including a step of forming a dielectric isolation region for element isolation on a semiconductor substrate, the step of forming a desired insulating region on one surface of a first semiconductor substrate. And a step of forming a desired insulating layer on one surface of the second semiconductor substrate, and a step of joining the one surface of the first semiconductor substrate and the one surface of the second semiconductor substrate by heat treatment. And a step of polishing the other surface of the second semiconductor substrate to the insulating region of the first semiconductor substrate to form the insulating region as a partition wall.