JPH05121486A - Tab type semiconductor device and manufacture thereof - Google Patents

Abstract

PURPOSE:To provide a TAB type semiconductor device and an apparatus for manufacturing the same in which peeling or damage of electrically connecting parts of inner leads to a semiconductor pellet is prevented by partly aiding a bending properties of an insulating film. CONSTITUTION:Metal foil leads 3 are laminated and formed on an insulating film 18 in which a plurality of through holes 7 are opened at a predetermined pitch, and inner leads 3a of the leads 3 are extended in the holes 7 in a TAB tape. The leads 3a of the tape are electrically connected to bump electrodes 4 of a semiconductor pellet 1 in a TAB type semiconductor 17a. Bending properties aiding means 18a is provided on a boundary region of each hole 7.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a TAB type semiconductor device having a structure in which an inner lead of a TAB tape and a semiconductor pellet are bonded together, and a manufacturing apparatus thereof.

[0002]

2. Description of the Related Art A TAB type semiconductor device is used, for example, in a camera IC mounted on a flexible film-like printed circuit board or the like. One example of the TAB type semiconductor device is shown in FIG. 4 and FIG. Is a semiconductor pellet (hereinafter referred to as a pellet), (2) is a frame film, and (3) is a metal foil lead. Then, the metal foil leads (3) are radially arranged from the inner side to the outer side of the frame-shaped film (2), and an intermediate portion thereof is adhered to the frame-shaped film (2),
Further, the pellet electrodes (4) formed by gold plating on the outer peripheral edge of the surface of the pellet (1) and the inner leads (3a) are thermocompression bonded to each other to bond the pellet (1) to the inside of the frame film (2). To support.

As shown in FIG. 6, the TAB type semiconductor device (5) is a TAB type semiconductor device (6) cut at a predetermined pitch and shape.
Is coated with a metal foil lead (3) having a predetermined pattern on the surface of a long insulating film (10) having through holes (7), window openings (8), and sprocket holes (9). The pellet (1) is supported in the through hole (7) by forming and forming bonding of the bump electrodes (4) ... And the inner lead (3a) in the through hole (7).

When assembling the TAB type semiconductor device (6), an inner lead bonder (11) shown in FIG. 7 is used. In the figure, (12) is a tape guide, (13) is a bonding stage, and (14). Is the TAB tape, (1
5a) and (15b) are spools. The tape guide (12) is formed by bending both ends of a long sheet metal and forming a window hole (16) in the middle part thereof, and, although not shown, the back surface of the TAB tape (14) is made of metal. It has a groove into which the foil lead (3) fits. The bonding stage (13) is arranged below the tape guide (12) so as to be movable up and down, to position and place the pellet (1), and
The pellet (1) is heated as a base by incorporating a heating means before mounting. Further, a bonding tool (not shown) having a built-in heating means is arranged above the window hole (16) of the tape guide (12) so as to face the bonding stage (13).
As shown in FIG. 6, the TAB tape (14) is formed by adhering a metal foil lead (3) on a long insulating film (10) (the through hole (7) ( 8) is omitted in FIG. 7.) The spools (15a) and (15b) are arranged before and after the bonding position, and the TAB before bonding is provided.
The tape (14) is sequentially fed out and sent to the bonding position, and after bonding, the spool (15
Take it up in b). At this time, as shown in FIG. 8, separators (9a) by embossing are provided in advance at positions and pitches different from those of the sprocket holes (9) ... Take it up without touching it.

In the inner lead bonder (11), the TAB tape (14) wound on the spool (15a) is first sent to the bonding position along the tape guide (12), and the through hole (7) is passed through the tape guide (12). 1
Position it so as to correspond to the window hole (16) of 2). Then, after positioning the pellet (1) on the bonding stage (13) and heating the base, the bump electrodes (4) of the pellet (1) are replaced with the inner leads (3a) of the metal foil leads (3). Abut. Therefore, the bonding tool is lowered while being heated, and the bump electrodes (4) ... And the inner leads (3a) of the metal foil leads (3) ...
A TAB type semiconductor device (6) in which the pellet (1) is electrically connected to (4) is obtained and sent to the following steps of inspection, resin coating and resin curing. At this time, every time when each working process such as the resin coating process on the pellet surface including the bonding process and the hardening process thereof is changed, the pair of spools (15a) and (15b) are repeatedly attached and removed at the beginning and the end of the working process. Work independently for each process in units.

[0006]

The problem to be solved by the present invention is, as shown in FIG. 8, when the TAB type semiconductor device (6) after bonding is wound on the spool (15b), as shown in FIG.
Since the B tape (14) is curved corresponding to the hub diameter of the spool, if the diameter is small, the inner lead (3a), in particular, the bonding portion between the bump electrodes (4) ... And the inner leads (3a). The stress is applied to the upper side in the peeling direction, and the above-mentioned bonding portion is easily peeled off. Therefore, if you increase the hub diameter and decrease the amount of bending, the winding amount will decrease, and since you are working in spool units, the replacement frequency of spools will increase,
This leads to a reduction in workability. Also, during bonding, the tape guide (12) at the intermediate position has to be curved because it is inclined from the spools (15a) and (15b) to the bonding position. Bump electrodes (4) ... and inner leads (3
The connection part with a) ... becomes easy to peel off.

[0007]

In a TAB type semiconductor device according to the present invention, a metal foil lead is laminated and formed on an insulating film having a plurality of through holes formed at a predetermined pitch, and the metal foil leads are formed in the through holes. T that extends the inner lead of the metal foil lead
In a TAB type semiconductor device in which the inner lead of the AB tape and the bump electrode of the semiconductor pellet are electrically connected, a bendability promoting means is provided in a boundary region of each through hole, and the bendability promoting means comprises: That is a groove portion formed in the width direction on the insulating film back surface, or a wide groove portion formed substantially across the through holes in the width direction on the insulating film back surface, or It is a long hole formed in the width direction of the insulating film, or embossing is provided along with each semiconductor device at both longitudinal ends on the insulating film, and in a recess formed between each embossing. Forming a curvaceous facilitating means,

As its manufacturing apparatus, a bonding portion for electrically connecting the inner leads and the semiconductor pellets along the transport path of the TAB tape, and a resin coating portion for coating and protecting the surface of the bonded semiconductor pellets with a resin. A resin curing portion for curing the coating resin is continuously arranged, or a buffer area for holding a TAB tape of a certain length and waiting is provided between the resin coating portion and the resin curing portion. It is characterized by

[0009]

According to the above technical means, in the TAB type semiconductor device in which the inner lead of the TAB tape and the bump electrode of the semiconductor pellet are bonded, the bending promoting means is provided in the boundary region of each through hole of the TAB tape, At the time of taking or the like, the TAB tape is curved in a polygonal shape by the curving promoting means to keep the bonding portion between the inner lead and the bump electrode of the semiconductor pellet flat.

[0010]

Embodiments of the TAB type semiconductor device and its manufacturing apparatus according to the present invention will be described below with reference to FIGS. FIG. 1 shows a TAB semiconductor device (17a) according to the present invention.
Examples (17b), (17c), and (17d) are shown. First, in FIG. 1A, (1) is a pellet, (3) is a metal foil lead, (4) is a bump electrode, and (18) is an insulating material. The film, (18a), is a groove portion as a bendability promoting means. The TAB type semiconductor device (17a) is a long insulating film (18) having through holes (7), window openings (8), and sprocket holes (not shown) as in the conventional case.
A metal foil lead (3) having a predetermined pattern is adhered and formed on the surface of, and the pellet (1) is electrically connected to the metal foil lead (3) and supported in the through hole (7). The feature of the present invention is that each through hole (7) on the back surface of the insulating film (18).
The groove portion (18a) is formed in the boundary region of the film in the film width direction by pressing or the like.

According to the above structure, when the TAB semiconductor device (17a) is wound on a spool, for example, the groove (18a) is mainly bent as a joint to be bent in a polygonal shape. Therefore, the insulating film (18) is hard to deform around the pellet (1) and holds a substantially flat surface, and stress is applied in the peeling direction at the bonding portion between the inner lead (3a) and the bump electrode (4). It is possible to prevent peeling and damage of the bonding.

Another embodiment of the present invention is shown in FIG.
As shown in (c) and (d), the TAB semiconductor device (17b) shown in FIG. 1 (b) is transparent in the width direction in the boundary region of each through hole (7) on the back surface of the insulating film (19). A wide groove portion (19a) is formed as a bendability promoting means so as to substantially extend between the holes (7). Further, in the TAB type semiconductor device (17c) shown in FIG. 1 (c), a long hole (20a) is formed in the width direction in the boundary region of each through hole (7) of the insulating film (20) as a bending promoting means. It was done. Furthermore, FIG.
In the TAB semiconductor device (17d) shown in (d), embossing (21a) is provided alongside each pellet (1) on both ends of the insulating film (21) in the longitudinal direction to form a region that is difficult to deform, The concave portion (21b) formed in the boundary region of the through holes (7) between the embossments (21a) forms the bending promoting means. Further, instead of the embossing (21a), an ultraviolet curable resin may be applied in the same planar shape and cured.

Next, when the TAB type semiconductor device (17) according to the present invention is used, at the time of manufacturing, as shown in FIG. 3, the TAB tape (14) is provided between the resin coating portion and the resin curing portion.
Buffer area (2
2) can be provided. The buffer area (22)
Is the first and second transport drums (23) (24) along the transport path of the TAB tape (14) after resin coating and before resin curing.
TAB tape (14) between each drum
Vertical movement type buffer drum (25)
Is arranged. And TAB tape (14)
Is wound around each drum (23) (24) (25), even if the drum diameter is smaller than the hub diameter of the spools (15a) (15b), the bending promoting means (18a) is mainly used in the same manner as above.
The inner leads (3a) and the bump electrodes (4) are curved in a polygonal shape with (19a), (20a), and (21a) as joints.
Since no stress is applied to the bonding portion with and, the peeling and damage can be prevented.

Therefore, as a TAB type semiconductor device manufacturing apparatus, a pair of spools (15a) and (15b) are provided with different working equipment, that is, inner leads (3a) and pellets along the transport path of the TAB tape (14). (1) A bonding portion for electrically connecting, a resin coating portion for coating and protecting the bonded pellet surface with a resin, and a resin curing portion for curing the coating resin are continuously arranged, and
A buffer region (22) between the resin coating portion and the resin curing portion
To provide.

In the above structure, the T of the resin coated portion is
When the resin coating of the other pellets is completed during the resin curing of the AB tape (14), the time required for bonding and resin coating is relatively short, whereas the resin curing needs to be held for a certain time. The buffer drum (25) is lowered to hold and hold the TAB tape (14) immediately after resin coating for a certain period of time immediately before resin curing. Then, when the work of the TAB tape (14) being cured of the resin is finished after a certain period of time, the buffer drum (25) is raised, the TAB tape (14) immediately after the curing is sent at once, and the TAB tape immediately after the resin coating is performed. Supply the tape (14) to the curing process,
The time from the resin coating to the curing is continuous in time. That is, according to the manufacturing apparatus, the spool (15a) (15
b) Different processes can be arranged continuously in terms of location and time, so that it is not necessary to replace the spools (15a) and (15b) for each work, and the winding amount for each spool is increased to replace them. The frequency is drastically reduced. At the same time, the spool mounting area for each different work position becomes unnecessary and the equipment area is reduced.

[0016]

According to the present invention, when the TAB type semiconductor device is wound around a spool and each work is performed, no stress is applied to the electrical connection portion between the inner lead and the bump electrode, and peeling or damage is caused. It can be prevented. In addition, the hub diameter of the spool can be reduced to increase the winding amount, and different manufacturing processes can be arranged continuously between a pair of spools as a manufacturing device, and the frequency of spool replacement can be reduced, resulting in a reduction in man-hours. Productivity is improved and productivity is improved by shortening work time. Furthermore, the equipment area is reduced and the equipment becomes smaller.

[Brief description of drawings]

FIG. 1A and FIG. 1B are side sectional views of essential parts showing respective embodiments of a TAB type semiconductor device according to the present invention. (C)
(D) Both are main part plan views showing respective examples of the TAB type semiconductor device according to the present invention.

FIG. 2 is an operation explanatory diagram of the semiconductor device shown in FIG.

FIG. 3 is a side view of essential parts showing an embodiment of a TAB type semiconductor device manufacturing apparatus according to the present invention.

FIG. 4 is a partial cross-sectional side view showing an example of a TAB semiconductor device.

FIG. 5 is a plan view of FIG.

FIG. 6 is a partial plan view showing an example of a conventional TAB semiconductor device.

FIG. 7 is a partial cross-sectional side view of an inner lead bonder showing an example of a conventional TAB type semiconductor device manufacturing apparatus.

FIG. 8 is an explanatory diagram of a problem of the present invention.

[Explanation of symbols]

 1 Semiconductor Pellet 3 Metal Foil Lead 3a Inner Lead 4 Bump Electrode 7 Through Hole 18, 19, 20, 21 Insulating Film 18a Groove 19a Wide Groove 20a Long Hole 21a Embossing

Claims (7)

[Claims] 1. An inner lead and a semiconductor pellet of a TAB tape in which a metal foil lead is laminated on an insulating film having a through hole and the lead is extended into the through hole to form an inner lead. In the TAB type semiconductor device which is electrically connected to the bump electrode, the TAB type semiconductor device is provided with a bendability promoting means in a boundary region of each through hole. 2. The TAB type semiconductor device according to claim 1, wherein the bendability promoting means is a groove formed on the back surface of the insulating film in the width direction thereof. 3. The TAB according to claim 1, wherein the bendability promoting means is a wide groove formed on the back surface of the insulating film so as to extend substantially across the through holes in the width direction thereof.
Semiconductor device. 4. The TAB type semiconductor device according to claim 1, wherein the bendability promoting means is an elongated hole formed in a width direction of the insulating film. 5. The embossing is provided on both sides of the insulating film in the longitudinal direction side by side with the respective semiconductor devices, and the concave portion formed between the embossing forms the curving promoting means. Item 2. A TAB semiconductor device according to item 1. 6. A bonding portion for electrically connecting the inner lead and the semiconductor pellet along the transporting path of the TAB tape, a resin coating portion for coating and protecting the surface of the bonded semiconductor pellet with a resin, and a coating resin. The TAB type semiconductor device manufacturing apparatus according to claim 1, wherein a resin curing portion to be cured is arranged continuously. 7. The TAB type semiconductor device manufacturing apparatus according to claim 1, further comprising a buffer region between the resin coating portion and the resin curing portion, which holds a TAB tape of a predetermined length and stands by. ..