JPH05119094A - Ferroelectric thin film measuring instrument - Google Patents

Ferroelectric thin film measuring instrument

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Publication number
JPH05119094A
JPH05119094A JP24789391A JP24789391A JPH05119094A JP H05119094 A JPH05119094 A JP H05119094A JP 24789391 A JP24789391 A JP 24789391A JP 24789391 A JP24789391 A JP 24789391A JP H05119094 A JPH05119094 A JP H05119094A
Authority
JP
Japan
Prior art keywords
thin film
voltage
ferroelectric thin
capacitor
residual polarization
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24789391A
Other languages
Japanese (ja)
Inventor
Kazuyuki Hamada
和之 濱田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP24789391A priority Critical patent/JPH05119094A/en
Publication of JPH05119094A publication Critical patent/JPH05119094A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To obtain a ferroelectric thin film measuring instrument which can simultaneously measure the residual polarization and switching time of a ferroelectric thin film with the same measuring system. CONSTITUTION:A voltage generator 13 is connected so that the generator 13 can generates a testing voltage of a square wave and apply the voltage between electrodes 11 and 12 through a capacitor 14. Both ends of the capacitor 14 are respectively connected to the (+) and (-) input terminals of a differential amplifier 15. In case residual polarization exists in a ferroelectric thin film 10 when the generator 13 generates the testing voltage and applies the voltage the electrodes 11 and 12 through the capacitor 14, a voltage Vr proportional to the residual polarization is generated across the capacitor 14. Therefore, when the voltage Vr proportional to the residual polarization is fetched through the amplifier 15 and observed on an oscilloscope, the residual polarization of the thin film 10 can be measured. In addition, by differentiating the output signal of the amplifier 15 by means of a differentiation circuit 16, the differentiated waveform corresponding to an inverted current generated when polarization inversion takes place in the thin film 10 is obtained and, when the differentiated waveform is observed on the oscilloscope, the switching time of the thin film 10 can be measured.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、強誘電体薄膜の残留分
極とスイッチングタイムとを測定する強誘電体薄膜測定
装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a ferroelectric thin film measuring device for measuring remanent polarization and switching time of a ferroelectric thin film.

【0002】[0002]

【従来の技術】従来、強誘電体薄膜の残留分極を測定す
る装置は、ソ−ヤタウア回路を基本構成とする測定系を
用い、強誘電体薄膜に電圧を印加してD−Eヒステリシ
スル−プを描き、印加電圧が「0」の場合の残留分極電
圧を測定するように構成されている。他方、強誘電体薄
膜のスイッチングタイムを測定する装置は、強誘電体薄
膜に正負の方形波を印加し、強誘電体薄膜の分極反転に
伴う反転電流の時間的変化を測定するように構成されて
いる。
2. Description of the Related Art Conventionally, an apparatus for measuring remanent polarization of a ferroelectric thin film uses a measuring system having a Soyer-Tauer circuit as a basic structure, and a voltage is applied to the ferroelectric thin film to make a DE hysteresis loop. And the residual polarization voltage when the applied voltage is “0” is measured. On the other hand, the device for measuring the switching time of the ferroelectric thin film is configured to apply a positive and negative square wave to the ferroelectric thin film and measure the time change of the reversal current accompanying the polarization reversal of the ferroelectric thin film. ing.

【0003】[0003]

【発明が解決しようとする課題】一般に、このような強
誘電体薄膜の残留分極の測定やスイッチングタイムの測
定は、なるべく簡便に行えることが望ましい。
Generally, it is desirable that the measurement of the remanent polarization and the switching time of such a ferroelectric thin film can be performed as easily as possible.

【0004】しかしながら、上述した残留分極測定装置
の構成及び測定方法とスイッチングタイム測定装置の構
成及び測定方法とが互いに全く異なるので、測定を簡便
化すべく残留分極とスイッチングタイムとを同時に測定
するようなことはできない。
However, since the configuration and measuring method of the above-mentioned remanent polarization measuring device and the configuration and measuring method of the switching time measuring device are completely different from each other, the remanent polarization and the switching time are simultaneously measured in order to simplify the measurement. It is not possible.

【0005】本発明は上述した従来の問題点に鑑み成さ
れたものであり、強誘電体薄膜の残留分極とスイッチン
グタイムとを同一の測定系において同時に測定すること
ができる強誘電体薄膜測定装置を提供することを課題と
する。
The present invention has been made in view of the above-mentioned conventional problems, and a ferroelectric thin film measuring apparatus capable of simultaneously measuring the remanent polarization of a ferroelectric thin film and the switching time in the same measuring system. The task is to provide.

【0006】[0006]

【課題を解決するための手段】本発明の強誘電体薄膜測
定装置は上述の課題を達成するために、測定対象である
強誘電体薄膜に直列接続されるコンデンサと、直列接続
されたコンデンサを介して強誘電体薄膜に正負の方形波
を印加する試験波発生手段と、コンデンサの両端の電圧
を検出する検出手段と、検出手段により検出された電圧
を微分する微分回路とを備えたことを特徴とする。
In order to achieve the above-mentioned object, the ferroelectric thin film measuring device of the present invention comprises a capacitor connected in series to the ferroelectric thin film to be measured and a capacitor connected in series. A test wave generating means for applying a positive and negative square wave to the ferroelectric thin film via the detecting means; a detecting means for detecting the voltage across the capacitor; and a differentiating circuit for differentiating the voltage detected by the detecting means. Characterize.

【0007】[0007]

【作用】本発明の強誘電体薄膜測定装置で測定する際に
は、先ずコンデンサは、測定対象である強誘電体薄膜に
直列接続される。この状態で、試験波発生手段が、コン
デンサを介して強誘電体薄膜に正負の方形波を印加する
と、強誘電体薄膜に存在する残留分極に比例した電圧が
コンデンサの両端に発生する。ここで、検出手段は、コ
ンデンサの両端の電圧を検出するので、該検出された電
圧により強誘電体薄膜の残留分極を測定できる。同時
に、微分回路は、検出手段により検出された電圧を微分
するので、該微分された波形により強誘電体薄膜のスイ
ッチングタイムを測定できる。この結果、強誘電体薄膜
の残留分極とスイッチングタイムとを同一の測定系で同
時に測定することができる。
When performing the measurement with the ferroelectric thin film measuring apparatus of the present invention, the capacitor is first connected in series to the ferroelectric thin film to be measured. In this state, when the test wave generating means applies positive and negative square waves to the ferroelectric thin film via the capacitor, a voltage proportional to the remanent polarization existing in the ferroelectric thin film is generated across the capacitor. Here, since the detection means detects the voltage across the capacitor, the residual polarization of the ferroelectric thin film can be measured by the detected voltage. At the same time, the differentiating circuit differentiates the voltage detected by the detecting means, so that the switching time of the ferroelectric thin film can be measured by the differentiated waveform. As a result, the remanent polarization of the ferroelectric thin film and the switching time can be simultaneously measured by the same measuring system.

【0008】次に示す本発明の実施例から、本発明のこ
のような作用がより明らかにされ、更に本発明の他の作
用が明らかにされよう。
From the following examples of the present invention, such an effect of the present invention will be further clarified, and further another effect of the present invention will be clarified.

【0009】[0009]

【実施例】以下、図面を参照して本発明の実施例を説明
する。図1は、本発明の一実施例である強誘電体薄膜測
定装置の要部構成を示すブロック図、図2は、図1の強
誘電体薄膜測定装置における主要信号を示す波形図であ
る。
Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a block diagram showing a main configuration of a ferroelectric thin film measuring apparatus according to an embodiment of the present invention, and FIG. 2 is a waveform diagram showing main signals in the ferroelectric thin film measuring apparatus of FIG.

【0010】図1において、強誘電体薄膜測定装置は、
測定対象である強誘電体薄膜10を試料として挟むための
電極11及び12と、試験波発生手段の一例としての電圧発
生器13と、強誘電体薄膜10に直列接続されるコンデンサ
14とを備えている。
In FIG. 1, the ferroelectric thin film measuring device is
Electrodes 11 and 12 for sandwiching the ferroelectric thin film 10 to be measured as a sample, a voltage generator 13 as an example of test wave generating means, and a capacitor connected in series to the ferroelectric thin film 10.
14 and.

【0011】電極11及び12は互いに電気的に絶縁されて
おり、電極12は接地されている。電圧発生器13は、その
一端で図2のAに示すような方形波の試験電圧を発生し
てコンデンサ14を介して電極11に印加するように接続さ
れており、電圧発生器13の他端は、電極12と共に接地さ
れている。即ち、電圧発生器13は、コンデンサ14と強誘
電体薄膜10との直列回路に正負の方形波試験電圧を印加
する。
The electrodes 11 and 12 are electrically insulated from each other, and the electrode 12 is grounded. The voltage generator 13 is connected so that one end thereof generates a square-wave test voltage as shown in A of FIG. 2 and applies it to the electrode 11 via the capacitor 14, and the other end of the voltage generator 13 is connected. Are grounded together with the electrode 12. That is, the voltage generator 13 applies positive and negative square wave test voltages to the series circuit of the capacitor 14 and the ferroelectric thin film 10.

【0012】ここで、電圧発生器13が発生する試験電圧
の波高値Vaは、強誘電体薄膜10が完全に分極することが
できる電圧以上に設定される。更に、コンデンサ14は、
残留分極がないものが選択され、また、その容量C1が強
誘電体薄膜10の容量Cxとの間にCx《 C1の関係になるよ
うに選択される。
Here, the peak value Va of the test voltage generated by the voltage generator 13 is set to a value equal to or higher than the voltage at which the ferroelectric thin film 10 can be completely polarized. Furthermore, the capacitor 14 is
Those having no remanent polarization are selected, and their capacitance C1 is selected so as to have a relationship of Cx << C1 with the capacitance Cx of the ferroelectric thin film 10.

【0013】図1において、強誘電体薄膜測定装置は更
に、検出手段の一例を構成する差動アンプ15と、微分回
路16とを備えている。
In FIG. 1, the ferroelectric thin film measuring device further includes a differential amplifier 15 and an differentiating circuit 16 which constitute an example of a detecting means.

【0014】コンデンサ14の両端即ち電圧発生器13側、
電極11側は夫々、差動アンプ15の+入力端子、−入力端
子に接続されている。この結果、図2のAのような方形
波の試験電圧に対して、差動アンプ15により図2のBの
ような検出波形がその出力信号として得られ、オシロス
コ−プで観測される。また、かかる差動アンプ15の出力
信号は、微分回路16に入力されて、微分回路16により更
に図2のCのような検出波形がその出力信号として得ら
れ、オシロスコ−プにより観測される。
Both ends of the capacitor 14, that is, the voltage generator 13 side,
The electrode 11 side is connected to the + input terminal and the − input terminal of the differential amplifier 15, respectively. As a result, with respect to the square-wave test voltage as shown in FIG. 2A, the differential amplifier 15 obtains a detected waveform as shown in FIG. 2B as its output signal, which is observed at the oscilloscope. Further, the output signal of the differential amplifier 15 is input to the differentiating circuit 16, and the differentiating circuit 16 further obtains a detection waveform as shown in C of FIG. 2 as its output signal, which is observed by the oscilloscope.

【0015】次に、以上のように構成された強誘電体薄
膜測定装置の動作について図1及び図2を参照して説明
する。電圧発生器13が図2のAのように電圧±Vaの方形
波の試験電圧をコンデンサ14を介して電極11に印加する
と、強誘電体薄膜10に残留分極が存在する場合、図2の
Bの検出波形において円dで示すように、コンデンサ14
の両端には、残留分極に比例した電圧Vrが発生する。即
ち、試験電圧が正極性の時には、残留分極に比例した電
圧Vr/2が、試験電圧が逆極性の時には、残留分極に比
例した逆極性の電圧(−Vr/2)が発生する。従って、
この残留分極に比例した電圧Vrを差動アンプ15を介して
取り出し、オシロスコ−プにより観測することにより、
強誘電体薄膜10の残留分極を測定することができる。
Next, the operation of the ferroelectric thin film measuring device configured as described above will be described with reference to FIGS. 1 and 2. When the voltage generator 13 applies a square wave test voltage of voltage ± Va to the electrode 11 via the capacitor 14 as shown in A of FIG. 2, when the ferroelectric thin film 10 has remanent polarization, B of FIG. As indicated by circle d in the detection waveform of
A voltage Vr proportional to the remanent polarization is generated at both ends of. That is, when the test voltage has a positive polarity, a voltage Vr / 2 proportional to the residual polarization is generated, and when the test voltage has a reverse polarity, a reverse polarity voltage (-Vr / 2) proportional to the residual polarization is generated. Therefore,
By taking out the voltage Vr proportional to the remanent polarization through the differential amplifier 15 and observing it with an oscilloscope,
The remanent polarization of the ferroelectric thin film 10 can be measured.

【0016】また、この際、差動アンプ15の出力信号を
微分回路16により微分すると、図2のCに示すように、
強誘電体薄膜10の分極反転に伴う反転電流に対応する微
分波形を得ることができるので、この微分波形をオシロ
スコ−プにより観測することにより強誘電体薄膜10のス
イッチングタイムを測定することができる。
Further, at this time, when the output signal of the differential amplifier 15 is differentiated by the differentiating circuit 16, as shown in C of FIG.
Since it is possible to obtain a differential waveform corresponding to the reversal current accompanying the polarization reversal of the ferroelectric thin film 10, the switching time of the ferroelectric thin film 10 can be measured by observing this differential waveform with an oscilloscope. .

【0017】以上のように、本実施例によれば、残留分
極及びスイッチングタイムを同時に測定することができ
る。
As described above, according to this embodiment, the remanent polarization and the switching time can be measured at the same time.

【0018】[0018]

【発明の効果】以上詳細に説明したように、強誘電体薄
膜に直列接続されるコンデンサと、コンデンサを介して
強誘電体薄膜に正負の方形波を印加する試験波発生手段
と、コンデンサの両端の電圧を検出する検出手段と、検
出手段により検出された電圧を微分する微分回路とを備
えたので、強誘電体薄膜の残留分極とスイッチングタイ
ムを同一の測定系で同時に測定することができる。
As described in detail above, a capacitor connected in series to a ferroelectric thin film, a test wave generating means for applying a positive and negative square wave to the ferroelectric thin film via the capacitor, and both ends of the capacitor. Since the detection means for detecting the voltage and the differentiation circuit for differentiating the voltage detected by the detection means are provided, the remanent polarization of the ferroelectric thin film and the switching time can be simultaneously measured by the same measurement system.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例である強誘電体薄膜測定装置
を示すブロック図である。
FIG. 1 is a block diagram showing a ferroelectric thin film measuring apparatus according to an embodiment of the present invention.

【図2】図1の強誘電体薄膜測定装置における主要信号
を示す波形図である。
FIG. 2 is a waveform diagram showing main signals in the ferroelectric thin film measuring apparatus of FIG.

【符号の説明】[Explanation of symbols]

10 強誘電体薄膜 13 電圧発生器 14 コンデンサ 15 差動アンプ 16 微分回路 10 Ferroelectric thin film 13 Voltage generator 14 Capacitor 15 Differential amplifier 16 Differentiation circuit

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 測定対象である強誘電体薄膜に直列接続
されるコンデンサと、直列接続された前記コンデンサを
介して前記強誘電体薄膜に正負の方形波を印加する試験
波発生手段と、前記コンデンサの両端の電圧を検出する
検出手段と、前記検出手段により検出された電圧を微分
する微分回路とを備えたことを特徴とする強誘電体薄膜
測定装置。
1. A capacitor connected in series to a ferroelectric thin film to be measured, test wave generating means for applying a positive and negative square wave to the ferroelectric thin film via the capacitor connected in series, and A ferroelectric thin film measuring apparatus comprising: a detection unit that detects the voltage across the capacitor; and a differentiation circuit that differentiates the voltage detected by the detection unit.
JP24789391A 1991-09-26 1991-09-26 Ferroelectric thin film measuring instrument Pending JPH05119094A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24789391A JPH05119094A (en) 1991-09-26 1991-09-26 Ferroelectric thin film measuring instrument

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24789391A JPH05119094A (en) 1991-09-26 1991-09-26 Ferroelectric thin film measuring instrument

Publications (1)

Publication Number Publication Date
JPH05119094A true JPH05119094A (en) 1993-05-14

Family

ID=17170148

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24789391A Pending JPH05119094A (en) 1991-09-26 1991-09-26 Ferroelectric thin film measuring instrument

Country Status (1)

Country Link
JP (1) JPH05119094A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001001161A1 (en) * 1999-06-24 2001-01-04 Sony Corporation Ferroelectric film property measuring device, measuring method therefor and measuring method for semiconductor memory units

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001001161A1 (en) * 1999-06-24 2001-01-04 Sony Corporation Ferroelectric film property measuring device, measuring method therefor and measuring method for semiconductor memory units
US6466039B1 (en) 1999-06-24 2002-10-15 Sony Corporation Ferroelectric film property measuring device, measuring method therefor and measuring method for semiconductor memory units

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