JPH05117092A - Single crystal silicon having high resistance value - Google Patents

Abstract

PURPOSE:To provide a single crystal silicon having high resistance. CONSTITUTION:A single crystal silicon having high resistance of 5,000-15,000OMEGA.cm resistance value and being <=10/cm<2> in oxidation stacking fault(OSF) and produced by pulling up a polycrystal silicon melted using a high-purity synthetic quartz crucible having <=0.1ppm metal impurity concentration by MCZ method. Since the single crystal silicon in the present invention has high resistance value of 5,000-15,000OMEGA.cm and is high-quality single crystal silicon having <=10/cm<2> oxidation stacking fault(OSF), the single crystal silicon has wide uses for CCD and power device, etc.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to high resistance single crystal silicon used as a semiconductor material.

[0002]

2. Description of the Related Art Conventionally, a silicon single crystal as a semiconductor material has been mainly used in a pulling method (CZ method, MCZ method) and a floating method (FZ method).
Z method) and the like. Pulling up method (CZ method)
Is a method in which polycrystalline silicon is melted in a quartz crucible and a single crystal silicon seed is dipped and pulled up while rotating to form a single crystal.As a recent improvement, a magnetic field is applied to molten silicon in the quartz crucible. A magnetic field pulling method (MCZ method) in which a seed of single crystal silicon is dipped in the applied state and pulled while rotating is also used. on the other hand,
In the FZ method, the raw material polycrystalline silicon rod of the upper axis is held vertically by the seed single crystal silicon provided on the lower axis, and the polycrystalline silicon is melted while the high frequency induction coil is sequentially moved from the upper end portion of the seed. It is a method of obtaining crystals.
By the way, the conventional single crystal silicon produced by the pulling method, impurities are eluted from the crucible and mixed into the single crystal being pulled, there is a problem that crystal defects occur to reduce the resistance value of the single crystal silicon, Its resistance is 3000Ω ・ c
The limit is about m, and single-crystal silicon with a resistance value exceeding 5000 Ω · cm has not been manufactured. Quartz crucible made of high-purity synthetic quartz is also known, but the resistance value of the single crystal silicon actually pulled up using this crucible is 5000 Ω.
・ Since it is about cm, high resistance single crystal silicon has not been obtained. On the other hand, single crystal silicon produced by the floating method has a non-uniform resistance value in the cross section of the wafer and is unsuitable for obtaining a large diameter single crystal. Is impossible to manufacture in a standard manner.

[0003]

SUMMARY OF THE INVENTION It is an object of the present invention to provide a single crystal silicon having a high resistance value up to a resistance value of 5,000 to 15,000 Ω · cm which has not been conventionally manufactured. According to the present invention, all of the metal impurity concentration is 0.1ppm or less, produced by pulling the polycrystalline silicon melted using a high-purity synthetic quartz crucible by the MCZ method, resistance value 5,000 ~ 15,000 Ω
High-resistivity single-crystal silicon with an oxidation-induced stacking fault (OSF) in cm / cm ² or less is provided.

The present invention is for producing high-resistance single crystal silicon by using a high-purity synthetic quartz crucible in combination with a magnetic field pulling method (MCZ method). As shown, a quartz crucible manufactured by using high-purity quartz silica powder having a metal impurity concentration of 0.1 ppm or less is used. Incidentally, Al, Fe, Ti, and B are considerably mixed as impurities in the conventional natural quartz powder as shown in the following table, and these are one of the causes for lowering the resistance value of single crystal silicon.

[0005]

[Table 1] (Unit: ppm) ────────────────────────────── Al Fe Ti Na K Li B Synthetic silica powder <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 Natural silica powder 8.0 0.4 1.5 0.1 0.1 0.1 <0.2 ──────────────────────────── ───

The high resistance single crystal silicon of the present invention is manufactured by the magnetic field pulling method (MCZ method) using the high purity quartz crucible. When pulling a single crystal from molten silicon, convection in the melt increases erosion of the quartz crucible and disturbs microscopic crystal growth, but convection can be suppressed by applying a magnetic field. .. A magnetic field is applied by a transverse magnetic field applied perpendicularly to the crystal pulling axis,
A longitudinal magnetic field applied parallel to the crystal pulling axis is known.
Each convection component perpendicular to the magnetic field lines is suppressed. The magnetic field strength is determined by the melt state. Suppressing convection stabilizes the solid-liquid interface and reduces the amount of crucible erosion.
Temperature fluctuations in the melt are also suppressed. As a result, the resistance value is 5,00
0 to 15,000 Ω ・ cm, and the oxidation-induced stacking fault (OSF) is 10
It is possible to obtain single crystal silicon of not more than pieces / cm ² . Further, since it is the pulling method, it is possible to manufacture single crystal silicon having a large diameter of 4 to 6 inches φ, and it is possible to easily manufacture high resistance single crystal silicon on an industrial scale.

Examples and Comparative Examples Using synthetic quartz powder and natural quartz powder of the quality shown in Table 2, a silicon single crystal was pulled by non-doping, MCZ method or CZ method, and resistance-induced and oxidation-induced stacking by scanning method. The defect (OSF) was measured. The results are shown in Table 2.
Shown in.

[0008]

[Table 2] ──────────────────────────────── Raw material Quartz powder pulling method Single crystal diameter Resistance value Ω ・ cm OSF Pieces / cm ² Remarks Synthetic MCZ 4 inches 10,000 to 12,000 2.3 Example Synthetic MCZ 4 inches 6,000 to 7,000 4.5 Various Synthetic MCZ 5 inches 13,000 to 14,000 3.3 Various Synthetic MCZ 6 inches 12,000 to 13,000 7.7 Various Natural MCZ 4 inches 2,000 to 3,000 15 Comparative example Natural CZ 5 inch 1,000 to 2,000 44 each

[0009]

The single crystal silicon of the present invention is 5,000 to 15,
It has a high resistance value of 000 Ω ・ cm and has 1 oxidation-induced stacking fault (OSF).
Since it is high quality single crystal silicon of 0 / cm ² or less, it has a wide range of applications such as CCD and power devices.

Claims (1)

[Claims] 1. A resistance value of 5,000 to 15,000 Ω · cm, which is produced by pulling polycrystalline silicon melted using a high-purity synthetic quartz crucible having a metal impurity concentration of 0.1 ppm or less by the MCZ method. 10 oxidation-induced stacking faults (OSF)
High resistance single crystal silicon of less than 1 piece / cm ² .