JPH05114639A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPH05114639A
JPH05114639A JP3275602A JP27560291A JPH05114639A JP H05114639 A JPH05114639 A JP H05114639A JP 3275602 A JP3275602 A JP 3275602A JP 27560291 A JP27560291 A JP 27560291A JP H05114639 A JPH05114639 A JP H05114639A
Authority
JP
Japan
Prior art keywords
semiconductor integrated
integrated circuit
burn
circuit
test
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3275602A
Other languages
Japanese (ja)
Inventor
Nobuhiro Okano
伸洋 岡野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP3275602A priority Critical patent/JPH05114639A/en
Publication of JPH05114639A publication Critical patent/JPH05114639A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To provide a semiconductor integrated circuit which is capable of carrying out a functional differential operation test and a burn-in test with high efficiency by means of a simple device. CONSTITUTION:A semiconductor integrated circuit formed on a wafer comprises a function circuit section 11 which embodies its original functions, a function differential test circuit 12 and a burn-in circuit 13. The function differential test circuit 12 and the burn-in circuit section 13 include memories which house commands to be executed during the function differential testing and burn-in testing and memories which house the execution results respectively. It is possible to change over the operation mode of the semiconductor integrated circuit by changing a signal level to be applied to mode setting terminals T1 and T2.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、半導体集積回路に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor integrated circuit.

【0002】[0002]

【従来の技術】近年、半導体集積回路の高機能化、高集
積化が飛躍的に進み、数百万トランジスタを1チップ上
に形成するまでになっている。このような高機能、高速
化した半導体集積回路の機能を検査するために、これら
の半導体集積回路を上回る性能を有する試験装置を用い
た機能動作試験が製品の出荷時に行われている。この試
験に必要となる試験パターンは、短期間の内に試験装置
毎に作成され、また、これらに要するシミュレーション
装置も半導体集積回路の機能向上に合わせて新たに導入
される。
2. Description of the Related Art In recent years, semiconductor integrated circuits have been dramatically improved in functionality and integration, and several million transistors have been formed on one chip. In order to inspect the function of such a high-performance and high-speed semiconductor integrated circuit, a functional operation test using a test device having a performance superior to those of the semiconductor integrated circuit is performed at the time of shipping of the product. The test pattern required for this test is created for each test device within a short period of time, and a simulation device required for these is newly introduced as the function of the semiconductor integrated circuit is improved.

【0003】[0003]

【発明が解決しようとする課題】このように、年々高機
能化していく半導体集積回路に合わせ、機能検査に使用
する試験装置の機能を向上させていく必要があり、従っ
て、半導体集積回路の量産のために投入される試験設備
への投資は年々増加の一途をたどっている。
As described above, it is necessary to improve the function of the test apparatus used for the functional inspection in accordance with the semiconductor integrated circuit which is becoming more and more sophisticated year by year. Therefore, the mass production of the semiconductor integrated circuit is required. The investment in the test equipment invested in the project is increasing year by year.

【0004】更に、機能動作試験に加えて、半導体集積
回路の初期故障を除去するために、出荷時の最終検査と
して高温下での通電試験、即ちバーンインと呼ばれるス
クリーニングが実施されるが、このバーンインを行うた
めには、ICソケットを実装したバーンイン基板を初め
としてソケット、コネクタ等の治具、バーンイン基板に
電源や信号を供給する装置を製造される半導体集積回路
の機種別に用意する必要があり、生産コストを上昇させ
る要因となっている。
Further, in addition to the functional operation test, in order to eliminate the initial failure of the semiconductor integrated circuit, an energization test under high temperature, that is, a screening called burn-in is carried out as a final inspection before shipment. In order to perform the above, it is necessary to prepare a burn-in board on which an IC socket is mounted, a jig such as a socket, a connector, and a device for supplying power and signals to the burn-in board for each model of semiconductor integrated circuit to be manufactured. It is a factor that increases the production cost.

【0005】本発明は、かかる問題に鑑みなされたもの
であり、機能動作試験及びバーンインを従来に比べ極め
て簡単な装置を用いて低コストで実施することを可能に
する半導体集積回路を提供することにある。
The present invention has been made in view of the above problems, and provides a semiconductor integrated circuit which enables a functional operation test and burn-in to be carried out at a low cost using an extremely simple apparatus as compared with the conventional one. It is in.

【0006】[0006]

【課題を解決するための手段】本発明の前記目的は、ウ
ェハ上に形成された半導体集積回路であって、該半導体
集積回路の機能を検査するために実行されるべき第1の
命令コードを格納するメモリ及び該第1の命令コードの
実行結果を格納するメモリを有する機能動作試験用回路
部と、該半導体集積回路のバーンイン時に実行されるべ
き第2の命令コードを格納するメモリ及び該第2の命令
コードの実行結果を格納するメモリを有するバーンイン
用回路部とを前記ウェハ上に備えたことを特徴とする半
導体集積回路によって達成される。
The above object of the present invention is a semiconductor integrated circuit formed on a wafer, and a first instruction code to be executed for inspecting the function of the semiconductor integrated circuit. A functional operation test circuit section having a memory for storing and a memory for storing an execution result of the first instruction code; a memory for storing a second instruction code to be executed at the time of burn-in of the semiconductor integrated circuit; And a burn-in circuit section having a memory for storing the execution result of the instruction code of No. 2, and a semiconductor integrated circuit.

【0007】[0007]

【作用】ウェハに半導体集積回路が形成されると、ウェ
ハ状態のまま、機能動作試験用回路部及びバーンイン用
回路部を使用して機能動作試験及びバーンインが実施さ
れる。これらの試験の結果は、機能動作試験用回路部及
びバーンイン用回路部内のメモリに夫々格納される。こ
れらのメモリの内容は、外部試験装置により読み出さ
れ、半導体集積回路の良否が判定される。
When the semiconductor integrated circuit is formed on the wafer, the functional operation test and burn-in are performed using the functional operation test circuit section and the burn-in circuit section in the wafer state. The results of these tests are stored in memories in the functional operation test circuit section and the burn-in circuit section, respectively. The contents of these memories are read by an external tester to determine the quality of the semiconductor integrated circuit.

【0008】[0008]

【実施例】以下に、本発明の実施例を図面を参照して詳
細に説明する。図2において、10は半導体ウェハであ
り、該ウェハには本発明に係る多数の半導体集積回路チ
ップが形成されている。
Embodiments of the present invention will now be described in detail with reference to the drawings. In FIG. 2, reference numeral 10 denotes a semiconductor wafer, on which a large number of semiconductor integrated circuit chips according to the present invention are formed.

【0009】図2は、図1のハッチング部分の拡大図で
ある。同図に示すように、この半導体集積回路チップ
は、半導体集積回路本来の機能を実現する機能回路部1
1、該機能回路部11についての機能動作試験を実施す
るために付加された機能動作試験用回路部12、及びバ
ーンインを実施するために付加されたバーンイン用回路
部13とから構成される。
FIG. 2 is an enlarged view of the hatched portion of FIG. As shown in the figure, this semiconductor integrated circuit chip has a functional circuit unit 1 that realizes the original functions of the semiconductor integrated circuit.
1, a functional operation test circuit section 12 added to perform a functional operation test on the functional circuit section 11, and a burn-in circuit section 13 added to perform a burn-in.

【0010】機能動作試験用回路部12及びバーンイン
用回路部13は、夫々、実行すべき命令コードを格納す
るメモリ及び命令コードの実行結果を格納するメモリを
備えている。表1に示すように、モード設定端子T1及
びT2に印加される信号のレベルに応じて上記半導体集
積回路の動作モードか決定される。
The functional operation test circuit section 12 and the burn-in circuit section 13 respectively include a memory for storing an instruction code to be executed and a memory for storing an execution result of the instruction code. As shown in Table 1, the operation mode of the semiconductor integrated circuit is determined according to the level of the signal applied to the mode setting terminals T1 and T2.

【0011】[0011]

【表1】 [Table 1]

【0012】次に上記半導体集積回路の機能動作試験及
びバーンインを実施する手順を図3のフローチャートを
用いて説明する。
Next, the procedure for carrying out the functional operation test and burn-in of the semiconductor integrated circuit will be described with reference to the flowchart of FIG.

【0013】先ず、ステップS1でモード設定端子T
1、T2に夫々レベル“1”,“0”の信号を印加する
ことにより機能動作試験実行モードを選択する。外部か
ら電源、クロック等の信号を供給すると、ステップS2
で機能動作試験用回路部内のメモリから命令コードが読
み出され実行される。機能動作試験が終了するとステッ
プS3で、この結果(半導体集積回路がCPU等の演算
回路の場合は演算結果、また半導体集積回路がメモリの
場合はサムチェック等)を機能動作試験用回路部内のメ
モリに格納する。次に、ステップS4でモード設定端子
T1、T2に夫々レベル“0”,“1”の信号を印加す
ることによりバーンイン実行モードを設定する。ステッ
プS5でバーンイン用回路部のメモリから命令コードが
読み出され実行される。この実行結果は、ステップS6
でバーンイン用回路内のメモリに格納され、試験が終了
する。
First, in step S1, the mode setting terminal T
The functional operation test execution mode is selected by applying signals of levels "1" and "0" to 1 and T2, respectively. When signals such as power supply and clock are supplied from the outside, step S2
At, the instruction code is read from the memory in the functional operation test circuit section and executed. When the functional operation test is completed, in step S3, this result (the operation result when the semiconductor integrated circuit is an arithmetic circuit such as a CPU, and the sum check when the semiconductor integrated circuit is a memory) is stored in the memory in the functional operation test circuit section. To store. Next, in step S4, the burn-in execution mode is set by applying signals of levels "0" and "1" to the mode setting terminals T1 and T2, respectively. In step S5, the instruction code is read from the memory of the burn-in circuit section and executed. The result of this execution is step S6.
Is stored in the memory in the burn-in circuit, and the test ends.

【0014】この後、ウェハに形成されている状態のま
ま、外部の試験装置により機能動作試験用回路部及びバ
ーンイン用回路部のメモリに夫々格納されている試験結
果を読み出し、これらが正しいものであるか否かを判定
する。外部試験装置は、従来の高度の機能を有する大規
模な装置である必要はなく、試験結果を判定する機能の
みを有する簡単な装置で良い。
After that, the test results stored in the memories of the functional operation test circuit section and the burn-in circuit section are read by an external test apparatus with the state of being formed on the wafer, and these are correct. Determine if there is. The external test apparatus does not have to be a conventional large-scale apparatus having a high function, but may be a simple apparatus having only a function of judging a test result.

【0015】判定の結果、半導体集積回路に不良があれ
ば、これをウェハ状態のまま除去し、アセンブリ工程に
進む。従って、従来のアセンブリ後にバーンインを行う
場合に比べアセンブリに要する費用が削減される。判定
の結果、良品と判定された半導体集積回路については、
機能回路部のみをダイシングして、アセンブリすること
により、アセンブリコストの増加を防ぐことができる。
If the result of the determination is that the semiconductor integrated circuit has a defect, it is removed in the wafer state and the process proceeds to the assembly process. Therefore, the cost required for the assembly is reduced as compared with the case of performing the burn-in after the conventional assembly. As for the semiconductor integrated circuit judged to be non-defective as a result of the judgment,
By assembling by dicing only the functional circuit section, it is possible to prevent an increase in assembly cost.

【0016】また、回路及びバーンイン用回路の試験結
果格納用のメモリをPROM、EPROM等の不揮発性
のメモリとすれば、機能動作試験及びバーンインと試験
結果の判定とを連続した工程として実施する必要がな
く、試験結果の判定を任意の時期に行うことができる。
If the memory for storing the test results of the circuit and the burn-in circuit is a non-volatile memory such as PROM or EPROM, it is necessary to carry out the functional operation test and the burn-in and the judgment of the test result as a continuous process. Therefore, the test result can be determined at any time.

【0017】更に、機能動作試験用回路及びバーンイン
用回路を1ウェハ当たり1組だけ設け、これによりウェ
ハ上の総ての機能回路を試験するようにすれば、ウェハ
面積の増加を必要最小限に押さえることができる。
Further, if only one set of the functional operation test circuit and the burn-in circuit is provided per wafer, and all the functional circuits on the wafer are tested, the increase of the wafer area can be minimized. You can hold it down.

【0018】[0018]

【発明の効果】本発明のウェハに形成された半導体集積
回路は、半導体集積回路の機能を検査するために実行さ
れるべき第1の命令コードを格納するメモリ及び該第1
の命令コードの実行結果を格納するメモリを有するセル
フテスト用回路部と、該半導体集積回路のバーンイン時
に実行されるべき第2の命令コードを格納するメモリ及
び該第2の命令コードの実行結果を格納するメモリを有
するバーンイン用回路部とを同じウェハ上に備えている
ので、極めて多数の(例えばウェハ・ロット単位の)半
導体集積回路を、ウェハ状態のまま、簡単な装置を用い
て機能差動試験とバーンインとを同時に実施することが
できる。従って、大規模かつ高機能の試験装置が不要と
なり、また、ICソケット、バーンイン基板等の治具を
大幅に削減することができる。
The semiconductor integrated circuit formed on the wafer of the present invention includes a memory for storing a first instruction code to be executed to test the function of the semiconductor integrated circuit, and the first memory.
A self-test circuit section having a memory for storing the execution result of the instruction code, a memory for storing a second instruction code to be executed at the time of burn-in of the semiconductor integrated circuit, and an execution result of the second instruction code. Since a burn-in circuit unit having a memory for storing is provided on the same wafer, a very large number of semiconductor integrated circuits (for example, wafer lot units) can be functionally differentiated in a wafer state by using a simple device. Testing and burn-in can be performed simultaneously. Therefore, a large-scale and highly functional test device is not required, and jigs such as IC sockets and burn-in boards can be significantly reduced.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の半導体集積回路の概略構成図である。FIG. 1 is a schematic configuration diagram of a semiconductor integrated circuit of the present invention.

【図2】本発明の半導体集積回路の形成されたウェハを
示す図である。
FIG. 2 is a view showing a wafer on which a semiconductor integrated circuit of the present invention is formed.

【図3】図1の半導体集積回路の機能差動試験及びバー
ンインの実施手順を説明するためのフローチャートであ
る。
FIG. 3 is a flowchart for explaining a procedure for performing a functional differential test and burn-in of the semiconductor integrated circuit of FIG.

【符号の説明】[Explanation of symbols]

10 半導体集積回路ウェハ 11 機能回路部 12 機能差動試験用回路部 13 バーンイン用回路部 T1、T2 モード設定端子 10 Semiconductor Integrated Circuit Wafer 11 Functional Circuit Section 12 Functional Differential Test Circuit Section 13 Burn-In Circuit Section T1, T2 Mode Setting Terminal

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 ウェハに形成された半導体集積回路であ
って、該半導体集積回路の機能を検査するために実行さ
れるべき第1の命令コードを格納するメモリ及び該第1
の命令コードの実行結果を格納するメモリを有する機能
動作試験用回路部と、該半導体集積回路のバーンイン時
に実行されるべき第2の命令コードを格納するメモリ及
び該第2の命令コードの実行結果を格納するメモリを有
するバーンイン用回路部とを前記ウェハ上に備えたこと
を特徴とする半導体集積回路。
1. A semiconductor integrated circuit formed on a wafer, the memory storing a first instruction code to be executed to test the function of the semiconductor integrated circuit, and the first memory.
Functional operation test circuit section having a memory for storing the execution result of the second instruction code, a memory for storing a second instruction code to be executed at the time of burn-in of the semiconductor integrated circuit, and an execution result of the second instruction code. And a burn-in circuit section having a memory for storing the semiconductor integrated circuit on the wafer.
JP3275602A 1991-10-23 1991-10-23 Semiconductor integrated circuit Pending JPH05114639A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3275602A JPH05114639A (en) 1991-10-23 1991-10-23 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3275602A JPH05114639A (en) 1991-10-23 1991-10-23 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPH05114639A true JPH05114639A (en) 1993-05-07

Family

ID=17557731

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3275602A Pending JPH05114639A (en) 1991-10-23 1991-10-23 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPH05114639A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5892368A (en) * 1994-12-19 1999-04-06 Matsushita Electric Industrial Co., Ltd. Semiconductor integrated circuit device having failure detection circuitry

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01214037A (en) * 1988-02-22 1989-08-28 Nec Yamagata Ltd Method of testing eprom integrated circuit
JPH02102470A (en) * 1988-10-07 1990-04-16 Sharp Corp Integrated circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01214037A (en) * 1988-02-22 1989-08-28 Nec Yamagata Ltd Method of testing eprom integrated circuit
JPH02102470A (en) * 1988-10-07 1990-04-16 Sharp Corp Integrated circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5892368A (en) * 1994-12-19 1999-04-06 Matsushita Electric Industrial Co., Ltd. Semiconductor integrated circuit device having failure detection circuitry

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