JPH05114314A - Transparent conductive membrane moulding method - Google Patents

Transparent conductive membrane moulding method

Info

Publication number
JPH05114314A
JPH05114314A JP27229291A JP27229291A JPH05114314A JP H05114314 A JPH05114314 A JP H05114314A JP 27229291 A JP27229291 A JP 27229291A JP 27229291 A JP27229291 A JP 27229291A JP H05114314 A JPH05114314 A JP H05114314A
Authority
JP
Japan
Prior art keywords
compound
indium
organic
tin
transparent conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP27229291A
Other languages
Japanese (ja)
Inventor
Akiyoshi Hattori
章良 服部
Akihiko Yoshida
昭彦 吉田
Atsushi Nishino
西野  敦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP27229291A priority Critical patent/JPH05114314A/en
Priority to EP92112620A priority patent/EP0524630B1/en
Priority to DE69223186T priority patent/DE69223186T2/en
Publication of JPH05114314A publication Critical patent/JPH05114314A/en
Priority to US08/478,342 priority patent/US5578248A/en
Priority to US08/697,512 priority patent/US5998011A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To obtain a transparent conductive membrane of a low resistance and a high transmissivity by heat treating an organic solution which consists of an organic compound which can be coordinated with either indium or tin, an inorganic indium compound, and an organic tin compound. CONSTITUTION:An organic compound consisting of an organic compound which can be coordinated with either indium or tin, an inorganic indium compound, and an organic tin compound, is heat treated. And the organic tin compound is hydrolyzed partially to form an intermediate complex compound between the indium and the tin, and a pyrolytic catalyst is mixed. As a result, an uneven membrane owing to the evaporation of the tin is suppressed, and since a low resistance and a high transmissivity can be given to the resultant membrane, a transparent conductive membrane with an excellent conductivity and an excellent transmissivity in the visible area can be obtained easily.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明はガラス、セラミックス等
の基板上に透明導電膜を形成するための方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a transparent conductive film on a substrate such as glass or ceramics.

【0002】[0002]

【従来の技術】液晶表示素子、エレクトロルミネッセン
ス(EL)表示素子などの表示素子類の電極や、自動
車、航空機、建築物などの窓ガラスの防曇または氷結防
止のための発熱抵抗体において、可視光に対して高透過
性を有する電極材料が使用されている。
2. Description of the Related Art Visible in electrodes of display elements such as liquid crystal display elements and electroluminescence (EL) display elements and in heating resistors for defrosting or preventing freezing of window glass of automobiles, aircraft, buildings, etc. An electrode material having high transparency to light is used.

【0003】このような透明導電性材料として、酸化ス
ズ・酸化アンチモン系(ATO)や酸化インジウム・酸
化スズ系(ITO)などが知られており、これらの金属
酸化物はガラスまたはセラミック基板上に容易に被膜を
形成し、透明導電膜とすることができる。
As such transparent conductive material, tin oxide / antimony oxide (ATO) and indium oxide / tin oxide (ITO) are known, and these metal oxides are deposited on a glass or ceramic substrate. A film can be easily formed to form a transparent conductive film.

【0004】透明導電膜の形成方法としては、真空蒸着
法、スパッタリング法、CVD法や塗布法が知られてい
る。
As a method for forming the transparent conductive film, a vacuum vapor deposition method, a sputtering method, a CVD method and a coating method are known.

【0005】[0005]

【発明が解決しようとする課題】しかし、CVD法以外
の方法は、装置が複雑かつ高価で、コストと量産性に問
題がある。また、CVD法は、他の方法の問題点を解決
する可能性を有しているものの、実用に耐えうる膜を形
成することが困難であった。
However, in the methods other than the CVD method, the apparatus is complicated and expensive, and there are problems in cost and mass productivity. Further, although the CVD method has a possibility of solving the problems of other methods, it is difficult to form a film that can be practically used.

【0006】例えば、硝酸インジウム、塩化インジウ
ム、塩化第2スズ等の無機化合物の有機溶液を使用した
場合は、形成された膜に白濁を生じたり、得られた膜の
機械的強度が不足で容易に傷がつく等の欠点がある。ま
た、オクチル酸インジウム等のイオン結合性の強い有機
酸インジウムを用いる方法においては、有機酸インジウ
ムが加水分解し易く、比較的容易に化学変化するため
に、塗布液のゲル化が生じる等の欠点がある。さらに、
インジウムやスズの有機錯体を使用する方法も提案され
ているが、この方法では基板に塗布した後の塗膜の熱分
解時において、スズ化合物の蒸散等により、膜の均一化
が阻害されるために、低抵抗の均質膜が得られない等の
欠点がある。
For example, when an organic solution of an inorganic compound such as indium nitrate, indium chloride, and stannic chloride is used, white turbidity occurs in the formed film, and the mechanical strength of the obtained film is insufficient, which is easy. There are drawbacks such as scratches. In addition, in the method of using an organic acid indium having a strong ionic bond such as indium octylate, the organic acid indium is easily hydrolyzed and undergoes a chemical change relatively easily. There is. further,
A method using an organic complex of indium or tin has also been proposed, but in this method, evaporation of the tin compound, etc., impedes uniformization of the film during thermal decomposition of the coating film after coating on the substrate. In addition, there is a defect that a low resistance homogeneous film cannot be obtained.

【0007】本発明は、上記課題を解決する透明導電膜
形成用組成物を形成する方法を提供することを目的とす
る。
An object of the present invention is to provide a method for forming a composition for forming a transparent conductive film which solves the above problems.

【0008】[0008]

【課題を解決するための手段】本発明は、上記目的を達
成するために、無機インジウム化合物と、有機スズ化合
物と、インジウムとスズのいずれにも配位可能な有機化
合物とからなる有機溶液を加熱処理して部分的に加水分
解させ、前記有機溶液に熱分解触媒を混合して得られる
ことを特徴とする透明導電膜形成用組成物、透明導電膜
の形成方法である。
In order to achieve the above object, the present invention provides an organic solution containing an inorganic indium compound, an organic tin compound, and an organic compound capable of coordinating indium and tin. A composition for forming a transparent conductive film and a method for forming a transparent conductive film, which are obtained by heating and partially hydrolyzing the mixture and mixing the organic solution with a thermal decomposition catalyst.

【0009】[0009]

【作用】有機化合物が1部配位した無機インジウム化合
物と有機スズ化合物と無機インジウム化合物が含有する
結晶水が反応し、有機スズ化合物が部分的に加水分解さ
れて、インジウムとスズの中間複合化合物を形成し、こ
れによって従来の課題であったスズの蒸散による膜の不
均一化を抑え、得られる膜の低抵抗率と高透過率を与え
るものである。また、熱分解触媒の添加も熱分解性を向
上させ、前記組成物を基板に塗布・焼成して得られる膜
の低抵抗率と高透過率を与るものである。
[Function] An inorganic indium compound in which an organic compound is partly coordinated, an organic tin compound, and water of crystallization contained in the inorganic indium compound react to partially hydrolyze the organic tin compound to form an intermediate composite compound of indium and tin. To suppress the non-uniformity of the film due to the evaporation of tin, which has been a problem in the past, and to provide the resulting film with a low resistivity and a high transmittance. Further, the addition of a thermal decomposition catalyst also improves the thermal decomposition property, and imparts a low resistivity and a high transmittance of the film obtained by coating and baking the composition on a substrate.

【0010】[0010]

【実施例】以下に、本発明の実施例を詳細に説明する。
本発明の透明導電膜形成用組成物は以下のようにして合
成される。まず最初に、無機インジウム化合物をインジ
ウムとスズのいずれとも配位可能な有機化合物と混合す
る。ここで、前記無機インジウム化合物は、インジウム
やスズと配位可能な有機化合物と、置換できるような配
位子を持つものであればよい。例えば、硝酸インジウ
ム、塩化インジウムが挙げられ、さらに結晶水を有して
いるものが好ましい。また、インジウムとスズのいずれ
とも配位可能な有機化合物は、インジウムとスズに1部
配位して、それらの中間化合物の形成を助け、有機溶剤
に対する溶解性をもたせるために必要であり、例えば、
β−ジケトン類、α−またはβ−ケトン酸類、前記ケト
ン酸類のエステル類、α−またはβ−アミノアルコール
類が挙げられる。
EXAMPLES Examples of the present invention will be described in detail below.
The composition for forming a transparent conductive film of the present invention is synthesized as follows. First, an inorganic indium compound is mixed with an organic compound capable of coordinating both indium and tin. Here, the inorganic indium compound may have an organic compound capable of coordinating with indium or tin and a ligand capable of substituting. Examples thereof include indium nitrate and indium chloride, and those having crystal water are preferable. Further, an organic compound capable of coordinating both indium and tin is necessary for coordinating in part with indium and tin to assist formation of an intermediate compound thereof and to have solubility in an organic solvent. ,
Examples thereof include β-diketones, α- or β-ketone acids, esters of the above ketone acids, and α- or β-amino alcohols.

【0011】次に、前記溶液に有機溶剤と有機スズ化合
物を加え、それらの有機溶液を加熱処理する。ここで、
前記有機スズ化合物としては、空気中では比較的安定で
あるが、加熱処理により容易に加水分解し易いものであ
ればよい。例えば、カルボン酸スズやジカルボン酸スズ
が挙げられ、炭素数が小さい、ギ酸スズ、酢酸スズ、シ
ュウ酸スズが好ましい。また、前記有機溶剤としては、
本発明で用いる有機化合物や無機化合物を溶解するもの
であればよい。例えば、トルエン、キシレン等の芳香族
炭化水素、、エタノール、イソプロパノール等のアルコ
ール類、酢酸エチル、酢酸ブチル等の酢酸エステル類、
アセトン、ジエチルケトン等のケトン類、メトキシエタ
ノール、エトキシエタノール等のエーテル類、テトラヒ
ドロフラン等が挙げられる。さらに、加熱処理の温度と
しては、無機インジウム化合物と有機スズ化合物と、そ
れらと配位可能な有機化合物とからなる有機溶液の還流
温度もしくは還流温度付近が好ましい。
Next, an organic solvent and an organic tin compound are added to the solution, and the organic solution is heat-treated. here,
The organotin compound may be any compound as long as it is relatively stable in the air but easily hydrolyzed by heat treatment. Examples thereof include tin carboxylate and tin dicarboxylate, and tin formate, tin acetate, and tin oxalate having a small carbon number are preferable. Further, as the organic solvent,
Any material capable of dissolving the organic compound or the inorganic compound used in the present invention may be used. For example, aromatic hydrocarbons such as toluene and xylene, alcohols such as ethanol and isopropanol, acetic acid esters such as ethyl acetate and butyl acetate,
Examples thereof include ketones such as acetone and diethyl ketone, ethers such as methoxyethanol and ethoxyethanol, and tetrahydrofuran. Further, the temperature of the heat treatment is preferably at or near the reflux temperature of the organic solution containing the inorganic indium compound, the organic tin compound, and the organic compound capable of coordinating with them.

【0012】そして、加熱処理後の有機溶液を室温付近
まで冷却し、熱分解触媒を加えて、混合した有機溶液を
透明導電膜形成用組成物とする。ここで、熱分解触媒
は、熱分解性を向上させ、前記組成物を基板に塗布・焼
成して得られる膜の低抵抗率と高透過率を与えるもので
あり、例えば過酸化物やニトロ化合物が挙げられるが、
炭素数が小さく、熱分解時の炭素残留の恐れの少ない過
酸化水素、トリニトロトルエンやピクリン酸が好まし
い。
Then, the organic solution after the heat treatment is cooled to around room temperature, a thermal decomposition catalyst is added, and the mixed organic solution is used as a composition for forming a transparent conductive film. Here, the thermal decomposition catalyst improves the thermal decomposition property and gives low resistivity and high transmittance of a film obtained by applying the composition to a substrate and baking the composition. For example, a peroxide or a nitro compound is used. Can be mentioned,
Hydrogen peroxide, trinitrotoluene, and picric acid, which have a small number of carbon atoms and are less likely to cause carbon residue during thermal decomposition, are preferable.

【0013】このようにして、得られた透明導電膜形成
用組成物を基板に塗布・乾燥した後、焼成して、透明導
電膜を形成する。ここで、透明導電膜形成用組成物の塗
布には、スクリーン印刷法、ロールコート法、ディップ
コート法、スピンコート法等を用いることができるが、
ディップコート法、スピンコート法が好ましい。また、
焼成温度としては、透明導電膜形成用組成物が分解する
温度以上で、かつ基板の変形温度以下であればよく、40
0〜700℃が好ましい。
The transparent conductive film-forming composition thus obtained is applied to a substrate, dried and then baked to form a transparent conductive film. Here, for the coating of the composition for forming a transparent conductive film, a screen printing method, a roll coating method, a dip coating method, a spin coating method or the like can be used.
The dip coating method and the spin coating method are preferable. Also,
The baking temperature may be higher than or equal to the temperature at which the composition for forming a transparent conductive film is decomposed and lower than the deformation temperature of the substrate, 40
0-700 degreeC is preferable.

【0014】以下、さらに詳細な実施例によって本発明
を説明するが、本発明はこれらの実施例によって限定さ
れるものではない。
Hereinafter, the present invention will be described with reference to more detailed examples, but the present invention is not limited to these examples.

【0015】(実施例1)1lの三角フラスコに、45g
の硝酸インジウム(化1)を秤量し、50gのアセチルア
セトンを加えて、室温で混合・溶解させた。その溶液
に、5.4g[(数1)で10wt%]のシュウ酸第1スズ
(化2)とアセトンを加えて還流した。その還流後の溶
液を、室温付近まで冷却し、0.1gの過酸化水素を加え
て、撹拌・混合し、透明導電膜形成用組成物を合成し
た。その透明導電膜形成用組成物に、シリカ(化4)コ
ート並ガラス基板を60cm/minの引き上げ速度でディップ
コートした。その基板を5分間室温で放置し、100℃で
5分間乾燥した後、500℃で1時間焼成した。得られた
膜の厚みは0.05μmである。
(Example 1) In an Erlenmeyer flask of 1 liter, 45 g
Of indium nitrate (Chemical Formula 1) was weighed, 50 g of acetylacetone was added, and they were mixed and dissolved at room temperature. To the solution was added 5.4 g [(numerical formula 1) of 10 wt%] stannous oxalate (Chemical Formula 2) and acetone, and the mixture was refluxed. The solution after the reflux was cooled to around room temperature, 0.1 g of hydrogen peroxide was added, and the mixture was stirred and mixed to synthesize a composition for forming a transparent conductive film. The transparent conductive film-forming composition was dip-coated with a silica (Chemical 4) -coated glass substrate at a pulling rate of 60 cm / min. The substrate was left at room temperature for 5 minutes, dried at 100 ° C. for 5 minutes, and then baked at 500 ° C. for 1 hour. The thickness of the obtained film is 0.05 μm.

【0016】[0016]

【化1】 [Chemical 1]

【0017】[0017]

【数1】 [Equation 1]

【0018】[0018]

【化2】 [Chemical 2]

【0019】[0019]

【化3】 [Chemical 3]

【0020】(実施例2)無機インジウム化合物とし
て、塩化インジウム(化3)を、有機スズ化合物とし
て、シュウ酸第1スズを用い、(数1)で10wt%となる
ようにした。他は実施例1に同じ。
Example 2 Indium chloride (Chemical Formula 3) was used as the inorganic indium compound, and stannous oxalate was used as the organotin compound, and the content was set to 10 wt% in (Equation 1). Others are the same as in Example 1.

【0021】[0021]

【化4】 [Chemical 4]

【0022】(実施例3)有機スズ化合物として、酢酸
第1スズを用い、(数1)で10wt%となるようにした。
他は実施例1に同じ。
(Example 3) Stannous acetate was used as the organotin compound, and the content was adjusted to 10 wt% in (Equation 1).
Others are the same as in Example 1.

【0023】(実施例4)インジウムとスズのいずれと
も配位可能な有機化合物として、2−アミノアルコール
を用いた。他は実施例1に同じ。
Example 4 2-Amino alcohol was used as an organic compound capable of coordinating both indium and tin. Others are the same as in Example 1.

【0024】(実施例5)熱分解触媒として、1gのト
リニトロトルエンを用いた。他は実施例1に同じ。
Example 5 1 g of trinitrotoluene was used as a thermal decomposition catalyst. Others are the same as in Example 1.

【0025】(比較例1)1lの三角フラスコに、45g
の硝酸インジウム(化1)と5.4g[(数1)で10wt
%]の塩化第2スズ(化5)とアセトンを加えて、撹拌
・混合し、透明導電膜形成用組成物を合成した。その透
明導電膜形成用組成物に、シリカ(化3)コート並ガラ
ス基板を60cm/minの引き上げ速度でディップコートし
た。その基板を5分間室温で放置し、100℃で5分間乾
燥した後、500℃で1時間焼成した。
(Comparative Example 1) In a 1 l Erlenmeyer flask, 45 g
10 wt% of indium nitrate (Chemical formula 1) and 5.4 g [(Equation 1)]
%] Stannous chloride (Chemical Formula 5) and acetone were added, and the mixture was stirred and mixed to synthesize a composition for forming a transparent conductive film. The transparent conductive film-forming composition was dip-coated with a silica (Chemical Formula 3) -coated glass substrate at a pulling rate of 60 cm / min. The substrate was left at room temperature for 5 minutes, dried at 100 ° C. for 5 minutes, and then baked at 500 ° C. for 1 hour.

【0026】[0026]

【化5】 [Chemical 5]

【0027】(表1)に実施例1〜5、比較例1の結果
を示す。
Table 1 shows the results of Examples 1 to 5 and Comparative Example 1.

【0028】[0028]

【表1】 [Table 1]

【0029】[0029]

【発明の効果】以上のように本発明においては、導電性
と可視領域における透過性に優れた透明導電膜を容易に
かつ安価で得ることができ、また、それは表示素子や発
熱抵抗体等の透明電極等の用途に適するものである。
As described above, according to the present invention, it is possible to easily and inexpensively obtain a transparent conductive film having excellent conductivity and transparency in the visible region, and it is possible to obtain a transparent conductive film such as a display element or a heating resistor. It is suitable for applications such as transparent electrodes.

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】インジウムとスズのいずれにも配位可能な
有機化合物と、無機インジウム化合物と、有機スズ化合
物とからなる有機溶液を加熱処理して部分的に加水分解
させ、前記有機溶液に熱分解触媒を混合して形成するこ
とを特徴とする透明導電膜の形成方法。
1. An organic solution comprising an organic compound capable of coordinating with indium and tin, an inorganic indium compound, and an organic tin compound is heat-treated to partially hydrolyze, and the organic solution is heated. A method for forming a transparent conductive film, which comprises forming a decomposition catalyst by mixing.
【請求項2】無機インジウム化合物が、硝酸インジウム
または塩化インジウムであることを特徴とする請求項1
記載の透明導電膜の形成方法。
2. The inorganic indium compound is indium nitrate or indium chloride.
The method for forming a transparent conductive film as described above.
【請求項3】有機スズ化合物が、カルボン酸塩またはジ
カルボン酸塩であることを特徴とする請求項1記載の透
明導電膜の形成方法。
3. The method for forming a transparent conductive film according to claim 1, wherein the organic tin compound is a carboxylate or a dicarboxylate.
【請求項4】配位可能な有機化合物が、β−ジケトン
類、α−またはβ−ケトン酸類、前記ケトン酸類のエス
テル類、α−またはβ−アミノアルコール類からなる群
から選ばれるものであることを特徴とする請求項1記載
の透明導電膜の形成方法。
4. The coordinating organic compound is selected from the group consisting of β-diketones, α- or β-ketone acids, esters of the ketone acids, and α- or β-amino alcohols. The method for forming a transparent conductive film according to claim 1, wherein
【請求項5】熱分解触媒が、過酸化物またはニトロ化合
物のいずれかであることを特徴とする請求項1記載の透
明導電膜の形成方法。
5. The method for forming a transparent conductive film according to claim 1, wherein the thermal decomposition catalyst is either a peroxide or a nitro compound.
JP27229291A 1991-07-24 1991-10-21 Transparent conductive membrane moulding method Pending JPH05114314A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP27229291A JPH05114314A (en) 1991-10-21 1991-10-21 Transparent conductive membrane moulding method
EP92112620A EP0524630B1 (en) 1991-07-24 1992-07-23 Composition for use in a transparent and electrically conductive film and a method for making the film
DE69223186T DE69223186T2 (en) 1991-07-24 1992-07-23 Composition for use in a transparent electroconductive film and process for producing the same
US08/478,342 US5578248A (en) 1991-07-24 1995-06-07 Composition for use in a transparent and electrically conductive film and a method for making the film
US08/697,512 US5998011A (en) 1991-07-24 1996-08-26 Composition for use in a transparent and electrically conductive film and a method for making the film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27229291A JPH05114314A (en) 1991-10-21 1991-10-21 Transparent conductive membrane moulding method

Publications (1)

Publication Number Publication Date
JPH05114314A true JPH05114314A (en) 1993-05-07

Family

ID=17511831

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27229291A Pending JPH05114314A (en) 1991-07-24 1991-10-21 Transparent conductive membrane moulding method

Country Status (1)

Country Link
JP (1) JPH05114314A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001002954A (en) * 1999-06-16 2001-01-09 Asahi Denka Kogyo Kk Coating solution for forming transparent electroconductive film and formation of transparent electroconductive film

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001002954A (en) * 1999-06-16 2001-01-09 Asahi Denka Kogyo Kk Coating solution for forming transparent electroconductive film and formation of transparent electroconductive film
JP4495798B2 (en) * 1999-06-16 2010-07-07 株式会社Adeka Method for forming transparent conductive film

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