JPH051122Y2 - - Google Patents
Info
- Publication number
- JPH051122Y2 JPH051122Y2 JP1985160296U JP16029685U JPH051122Y2 JP H051122 Y2 JPH051122 Y2 JP H051122Y2 JP 1985160296 U JP1985160296 U JP 1985160296U JP 16029685 U JP16029685 U JP 16029685U JP H051122 Y2 JPH051122 Y2 JP H051122Y2
- Authority
- JP
- Japan
- Prior art keywords
- conductive
- slit
- short
- coupling
- dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000008878 coupling Effects 0.000 description 26
- 238000010168 coupling process Methods 0.000 description 26
- 238000005859 coupling reaction Methods 0.000 description 26
- 230000001939 inductive effect Effects 0.000 description 7
- 230000001965 increasing effect Effects 0.000 description 2
- 238000012805 post-processing Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Landscapes
- Control Of Motors That Do Not Use Commutators (AREA)
Description
【考案の詳細な説明】
(産業上の利用分野)
本考案は、衛星通信、自動車電話、その他マイ
クロ波帯における通信機器等に使用される誘電体
フイルタの改良に関する。[Detailed Description of the Invention] (Industrial Application Field) The present invention relates to improvements in dielectric filters used in satellite communications, car telephones, and other communication equipment in the microwave band.
(考案の概要)
本考案は、マイクロ波帯の通信機器等に用いる
誘電体フイルタにおいて、誘電体フイルタの貫通
導電部の開放端及び短絡端が位置するそれぞれの
端面にスリツトを形成し、貫通導電部周辺で構成
される各共振器間の結合を誘導性結合及び容量性
結合の両者を併用した構成として高域側及び低域
側減衰特性の両方を向上させたものである。(Summary of the invention) The present invention is a dielectric filter used in microwave band communication equipment, etc., in which slits are formed in each end face where the open end and short-circuited end of the through-conducting part of the dielectric filter are located, and the through-conducting This structure uses both inductive coupling and capacitive coupling for the coupling between the resonators formed around the section, thereby improving both the high-frequency side and low-frequency side attenuation characteristics.
(考案の背景)
本考案者は、誘電体フイルタの貫通導電部の開
放端が位置する端面にスリツトを形成すると、貫
通導電部周辺で構成される各共振器間の結合が誘
導性となつたバンドパスフイルタが得られ、貫通
導電部の短絡端が位置する端面にスリツトを形成
すると、貫通導電部周辺で構成される各共振器間
の結合が容量性となつたバンドパスフイルタが得
られることをみいだした。(Background of the invention) The inventor of the present invention discovered that when a slit is formed in the end face of a dielectric filter where the open end of the through-hole conductive portion is located, the coupling between the resonators formed around the through-hole conductive portion becomes inductive. When a bandpass filter is obtained and a slit is formed in the end face where the short-circuited end of the through-hole conductive part is located, a band-pass filter in which the coupling between each resonator formed around the through-hole conductor becomes capacitive can be obtained. I found out.
(考案が解決しようとする問題点)
ところで、誘電体フイルタの貫通導電部の開放
端が位置する開放端面のみにスリツトを形成して
各共振器間を誘導性結合とすると、バンドパスフ
イルタの高域側の減衰特性は急峻(シヤープ)に
遮断する特性となるが、低域側は劣化して緩慢
(ブロード)な特性となり、バンドパス特性が非
対称となる嫌いがある。(Problem to be solved by the invention) By the way, if a slit is formed only on the open end surface where the open end of the through-conducting part of the dielectric filter is located and inductive coupling is established between each resonator, the height of the bandpass filter will increase. The attenuation characteristic on the high frequency side becomes a characteristic that cuts off sharply (sharp), but the low frequency side deteriorates and becomes a slow (broad) characteristic, which tends to make the bandpass characteristic asymmetrical.
また、誘電体フイルタの貫通導電部の短絡端が
位置する短絡端面のみにスリツトを形成して各共
振器間を容量性結合とすると、バンドパスフイル
タの低域側の減衰特性は急峻(シヤープ)に遮断
する特性となるが、高域側は劣化して緩慢(ブロ
ード)な特性となり、バンドパス特性が非対称と
なる嫌いがある。 In addition, if a slit is formed only on the short-circuit end face where the short-circuit end of the through-conducting part of the dielectric filter is located, and capacitive coupling is established between each resonator, the attenuation characteristic on the low frequency side of the bandpass filter becomes steep. However, the high frequency side deteriorates and becomes slow (broad), and the bandpass characteristics tend to be asymmetrical.
(問題点を解決するための手段)
本考案は、上記の点に鑑み、スリツトを貫通導
電部の開放端及び短絡端が位置する誘電体ブロツ
クの両端面(開放端面及び短絡端面)に形成する
ことにより、各貫通導電部周辺で構成される共振
器の結合を誘導性結合と容量性結合とを併用した
ものとして高域側及び低域側減衰特性の両方を良
好な特性とした誘電体フイルタを提供しようとす
るものである。(Means for Solving the Problems) In view of the above points, the present invention forms slits on both end surfaces (open end surface and short circuit end surface) of the dielectric block where the open end and short circuit end of the through conductive part are located. As a result, a dielectric filter with good high-frequency and low-frequency attenuation characteristics can be created by using both inductive coupling and capacitive coupling for the coupling of the resonator formed around each through-conducting part. This is what we are trying to provide.
本考案は、複数の貫通穴の内面に導電膜を形成
してなる3個以上の貫通導電部を間隔をおいて並
設した誘電体ブロツク四側面と前記貫通導電部の
一端が位置する短絡端面とに導電膜を形成してな
る誘電体フイルタにおいて、前記3個以上の貫通
導電部のうち少なくとも1組の隣合う貫通導電部
の開放端間の開放端面に導電膜を有しないスリツ
トを形成するとともに、残りの隣合う貫通導電部
の短絡端間の前記短絡端面にもスリツトを形成し
た構成として上記問題点を解決している。なお、
短絡端面側のスリツト内面には導電膜があつても
無くてもよい。 The present invention provides four side surfaces of a dielectric block in which three or more through conductive parts formed by forming conductive films on the inner surfaces of a plurality of through holes are arranged side by side at intervals, and a short-circuited end face where one end of the through conductive parts is located. In the dielectric filter, a slit having no conductive film is formed on the open end surface between the open ends of at least one set of adjacent through-hole conductive parts among the three or more through-hole conductive parts. At the same time, the above-mentioned problem is solved by forming a slit also in the short-circuit end face between the short-circuit ends of the remaining adjacent through-hole conductive parts. In addition,
There may or may not be a conductive film on the inner surface of the slit on the short-circuit end surface side.
(作用)
本考案の誘電体フイルタでは、誘電体ブロツク
の開放端面にスリツトを形成した所は共振器間の
結合が誘導性結合となり、短絡端面にスリツトを
形成した所は容量性結合となる。従つて、全体で
は誘導性結合と容量性結合とを併用したことにな
り、高域側及び低域側の減衰特性はともに急峻と
なり、対称性の良い減衰特性のバンドパスフイル
タを実現できる。(Function) In the dielectric filter of the present invention, the coupling between the resonators becomes inductive coupling where slits are formed on the open end face of the dielectric block, and capacitive coupling occurs where slits are formed on the shorted end face. Therefore, inductive coupling and capacitive coupling are used in combination as a whole, and the attenuation characteristics on both the high and low frequency sides become steep, making it possible to realize a bandpass filter with well-symmetrical attenuation characteristics.
また、開放端面のスリツト内面には導電膜は無
いので、スリツトの深さ等を後加工で変化させて
共振器間の結合度を微調整するのに好都合であ
り、回転砥石等で容易に形成でき、製造容易で低
コスト化が可能である。 In addition, since there is no conductive film on the inner surface of the slit on the open end surface, it is convenient to finely adjust the degree of coupling between resonators by changing the depth of the slit in post-processing, and it can be easily formed with a rotating grindstone. It is easy to manufacture and can be manufactured at low cost.
(実施例)
以下、本考案に係る誘電体フイルタの実施例を
図面に従つて説明する。(Example) Examples of the dielectric filter according to the present invention will be described below with reference to the drawings.
第1図乃至第3図において、誘電体ブロツク1
には貫通穴の内面に導電膜を形成してなる複数の
貫通導電部2A乃至2Eが形成され、誘電体ブロ
ツク外面(貫通導電部の存在する一面及び四側
面)には前記貫通導電部2A乃至2Eに接続する
導電膜3が銀等のメタライズで形成されている。 In FIGS. 1 to 3, dielectric block 1
A plurality of through conductive parts 2A to 2E are formed by forming a conductive film on the inner surface of the through hole, and the through conductive parts 2A to 2E are formed on the outer surface of the dielectric block (one surface and four sides where the through conductive parts are present). A conductive film 3 connected to 2E is formed of metallization such as silver.
また、各貫通導電部2A乃至2Eの開放端が位
置する前記誘電体ブロツク1の開放端面5は導電
膜が形成されていない部分である。そして、貫通
導電部2A,2B中間位置と貫通導電部2D,2
E中間位置の開放端面には段間結合用スリツト6
がそれぞれ形成されている。 Further, the open end surface 5 of the dielectric block 1 on which the open ends of the through conductive portions 2A to 2E are located is a portion on which no conductive film is formed. Then, the intermediate position of the through conductive parts 2A, 2B and the through conductive parts 2D, 2
EThe open end surface at the intermediate position has a slit 6 for connecting between stages.
are formed respectively.
一方、各貫通導電部2A乃至2Eが導電膜3に
接続される短絡端が位置する前記誘電体ブロツク
1の短絡端面には、貫通導電部2B,2C中間位
置と貫通導電部2C,2D中間位置に段間結合用
ストリツト7がそれぞれ形成されている。 On the other hand, on the short-circuited end surface of the dielectric block 1 where the short-circuited end where each of the through-hole conductive parts 2A to 2E is connected to the conductive film 3 is located, there are an intermediate position between the through-hole conductive parts 2B and 2C and an intermediate position between the through-hole conductive parts 2C and 2D. An inter-stage coupling strip 7 is formed in each of the stages.
なお、スリツト6,7内面に導電膜が形成され
ていない場合を図示したが、短絡端面側のスリツ
ト7は内面に導電膜3に接続する導電膜が形成さ
れてもよい。 Although a case is shown in which no conductive film is formed on the inner surfaces of the slits 6 and 7, a conductive film connected to the conductive film 3 may be formed on the inner surface of the slit 7 on the short-circuited end surface side.
上記実施例の構成によれば、段間結合用スリツ
ト6と誘電体ブロツク1の開放端面に形成するこ
とにより、貫通導電部2Aによる共振器部分と2
Bによる共振器部分及び貫通導電部2Dによる共
振器部分と2Eによる共振器部分とをそれぞれ誘
導性結合とし、高域側の減衰量を大きくし減衰特
性を急峻にすることができる。また、段間結合用
スリツト7を誘電体ブロツク1の短絡端面に形成
することにより、貫通導電部2Bによる共振器部
分と2Cによる共振器部分及び貫通導電部2Cに
よる共振器部分と2Dによる共振器部分とをそれ
ぞれ容量性結合とし、低域側の減衰量を大きくし
減衰特性を急峻にすることができる。この結果、
減衰特性の対称性の良好なバンドパスフイルタを
実現できる。 According to the configuration of the above embodiment, by forming the interstage coupling slit 6 and the open end face of the dielectric block 1, the resonator portion by the through conductive portion 2A and the two
The resonator portion formed by B, the resonator portion formed by the through conductive portion 2D, and the resonator portion formed by 2E are each inductively coupled, thereby increasing the amount of attenuation on the high frequency side and making the attenuation characteristic steeper. Furthermore, by forming the interstage coupling slit 7 on the short-circuited end face of the dielectric block 1, a resonator portion formed by the through conductive portion 2B, a resonator portion formed by 2C, a resonator portion formed by the through conductive portion 2C, and a resonator portion formed by 2D are formed. By capacitively coupling these parts, the amount of attenuation on the low frequency side can be increased and the attenuation characteristics can be made steep. As a result,
A bandpass filter with good symmetry of attenuation characteristics can be realized.
さらに、スリツト内面は導電膜が無くてよいか
ら、誘電体ブロツクのメタライズ後に回転砥石等
でスリツト深さを大きくして、結合度の調節、ひ
いては高域側及び低域側のフイルタ特性の調整が
可能である。 Furthermore, since there is no need for a conductive film on the inner surface of the slit, it is possible to increase the depth of the slit using a rotary grindstone after metallizing the dielectric block to adjust the degree of coupling and, by extension, the filter characteristics on the high and low frequency sides. It is possible.
なお、上記実施例では、スリツト6,7の断面
が方形の場合を示したが、断面略U字状のスリツ
トを形成するようにしてもよい。このようなスリ
ツトの断面形状は回転砥石で形成する場合に好都
合である。 In the above embodiment, the slits 6 and 7 have a rectangular cross section, but the slits may have a substantially U-shaped cross section. Such a cross-sectional shape of the slit is convenient when forming the slit with a rotating grindstone.
上記各実施例において、入出力端子の引き出し
は省略したが、例えば貫通導電部の開放端に静電
容量で結合する手段等で入出力端子の引き出しが
可能である。 In each of the embodiments described above, drawing out the input/output terminals is omitted, but it is possible to draw out the input/output terminals by, for example, coupling to the open end of the through-hole conductive portion by means of capacitance.
(考案の効果)
以上説明したように、本考案の誘電体フイルタ
によれば、外面に導電膜を形成した誘電体ブロツ
クに複数の貫通導電部を間隔をおいて並設した場
合において、前記貫通導電部の開放端及び短絡端
が位置する前記誘電体ブロツク両端面にスリツト
を形成したので、各貫通導電部周辺で構成される
共振器間の結合を誘導性結合と容量性結合とを併
用したかたちとすることができる。この結果、高
域側及び低域側での減衰量を大きく急峻な特性と
することができ、減衰特性を良好にできる。さら
に、スリツト深さの調整により結合度を変化させ
ることが可能である。(Effects of the invention) As explained above, according to the dielectric filter of the invention, when a plurality of through conductive parts are arranged in parallel at intervals on a dielectric block having a conductive film formed on the outer surface, Since slits are formed on both end faces of the dielectric block where the open ends and short-circuited ends of the conductive parts are located, inductive coupling and capacitive coupling can be used together for coupling between the resonators formed around each through-conducting part. It can be made into a shape. As a result, the amount of attenuation on the high-frequency side and the low-frequency side can be made large and steep, and the attenuation characteristics can be improved. Furthermore, it is possible to change the degree of bonding by adjusting the slit depth.
また、開放端面のスリツト内面には導電膜は無
いので、スリツトの深さ等を後加工して共振器間
の結合度を微調整可能な利点もある。 Furthermore, since there is no conductive film on the inner surface of the slit on the open end surface, there is an advantage that the degree of coupling between the resonators can be finely adjusted by post-processing the depth of the slit.
第1図は本考案に係る誘電体フイルタの実施例
を示す平面図、第2図は同正断面図、第3図は同
低面図である。
1……誘電体ブロツク、2A乃至2E……貫通
導電部、3……導電膜、6,7……スリツト。
FIG. 1 is a plan view showing an embodiment of a dielectric filter according to the present invention, FIG. 2 is a front sectional view thereof, and FIG. 3 is a bottom view thereof. 1...Dielectric block, 2A to 2E...Through conductive portion, 3...Conductive film, 6, 7...Slit.
Claims (1)
個以上の貫通導電部を間隔をおいて並設した誘電
体ブロツクの四側面と前記貫通導電部の一端が位
置する短絡端面とに誘電膜を形成してなる導電体
フイルタにおいて、前記3個以上の貫通導電部の
うち少なくとも1組の隣合う貫通導電部の開放端
間の開放端面に導電膜を有しないスリツトを形成
するとともに、残りの隣合う貫通導電部の短絡端
間の前記短絡端面にもスリツトを形成したことを
特徴とする誘電体フイルタ。 A conductive film is formed on the inner surface of a plurality of through holes 3
In a conductive filter, a dielectric film is formed on four sides of a dielectric block in which three or more through conductive parts are arranged side by side at intervals, and on a short-circuited end face on which one end of the through conductive part is located. A slit having no conductive film is formed on the open end surface between the open ends of at least one set of adjacent through-hole conductive parts among the through-hole conductive parts, and a slit having no conductive film is formed on the short-circuited end face between the short-circuited ends of the remaining adjacent through-hole conductive parts. A dielectric filter characterized in that a slit is also formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1985160296U JPH051122Y2 (en) | 1985-10-19 | 1985-10-19 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1985160296U JPH051122Y2 (en) | 1985-10-19 | 1985-10-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6268308U JPS6268308U (en) | 1987-04-28 |
JPH051122Y2 true JPH051122Y2 (en) | 1993-01-13 |
Family
ID=31085543
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1985160296U Expired - Lifetime JPH051122Y2 (en) | 1985-10-19 | 1985-10-19 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH051122Y2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0731604Y2 (en) * | 1988-10-22 | 1995-07-19 | ティーディーケイ株式会社 | Dielectric filter |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5748801A (en) * | 1980-09-09 | 1982-03-20 | Oki Electric Ind Co Ltd | Dielectric substance filter |
JPS60152101A (en) * | 1984-01-19 | 1985-08-10 | Murata Mfg Co Ltd | Distributed constant type filter |
JPS61201501A (en) * | 1985-03-04 | 1986-09-06 | Mitsubishi Electric Corp | High frequency filter |
-
1985
- 1985-10-19 JP JP1985160296U patent/JPH051122Y2/ja not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5748801A (en) * | 1980-09-09 | 1982-03-20 | Oki Electric Ind Co Ltd | Dielectric substance filter |
JPS60152101A (en) * | 1984-01-19 | 1985-08-10 | Murata Mfg Co Ltd | Distributed constant type filter |
JPS61201501A (en) * | 1985-03-04 | 1986-09-06 | Mitsubishi Electric Corp | High frequency filter |
Also Published As
Publication number | Publication date |
---|---|
JPS6268308U (en) | 1987-04-28 |
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