JPH05109869A - Die bonding apparatus - Google Patents

Die bonding apparatus

Info

Publication number
JPH05109869A
JPH05109869A JP29772791A JP29772791A JPH05109869A JP H05109869 A JPH05109869 A JP H05109869A JP 29772791 A JP29772791 A JP 29772791A JP 29772791 A JP29772791 A JP 29772791A JP H05109869 A JPH05109869 A JP H05109869A
Authority
JP
Japan
Prior art keywords
semiconductor chip
needle
adhesive sheet
die bonding
pushing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP29772791A
Other languages
Japanese (ja)
Inventor
Hiroshi Ishiyama
弘 石山
Hitoshi Tamaki
仁 玉城
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP29772791A priority Critical patent/JPH05109869A/en
Publication of JPH05109869A publication Critical patent/JPH05109869A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H01L2221/68322Auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support

Abstract

PURPOSE:To prevent a semiconductor chip from being damaged when the semiconductor chip is pushed up defectively and it is pushed up by a method wherein the vibration in a direction which is parallel to and/or perpendicular to the axial-line direction of a pushing-up needle is applied to the pushing-up needle at a die bonding apparatus. CONSTITUTION:A needle holder 12 to which pushing-up needles 10 have been attached is situated at the lower part of a semiconductor chip 20 which has been attached to an adhesive sheet 30. A semiconductor chip situated around the semiconductor chip to be picked up is fixed. Then, the needle holder 12 is moved to the upper part; at the same time, the needle holder 12 is moved, at a frequency of 1 to 15kHz, to a direction which is parallel to or perpendicular to the axial-line direction of the pushing-up needles 10. The adhesive sheet 30 and the semiconductor chip 20 are pushed upward by means of the pushing-up needles 10. Then, the vibration which has been applied to the pushing-up needles 10 is transmitted to the adhesive sheet 30 and the semiconductor chip 20; one part of the semiconductor chip 20 is stripped from the adhesive sheet 30; the semiconductor chip 20 can be picked up easily.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、突上ニードルを有する
ダイボンディング装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a die bonding apparatus having a protruding needle.

【0002】[0002]

【従来の技術】ダイボンディング工程において裏面突上
方式が用いられている。この方式は、ウェハの裏面に粘
着シートを張り合わせてウェハを半導体チップに分離す
るダイシング工程の後、突上ニードルを粘着シートの裏
面から突き上げて、ピックアップツールによって半導体
チップを直接ピックアップする方式である。ピックアッ
プされた半導体チップは次のダイボンディング工程に送
られる。
2. Description of the Related Art A back surface bumping method is used in a die bonding process. This method is a method in which a semiconductor chip is directly picked up by a pickup tool after a dicing process in which an adhesive sheet is attached to the back surface of the wafer to separate the wafer into semiconductor chips, and a push-up needle is pushed up from the back surface of the adhesive sheet. The semiconductor chip picked up is sent to the next die bonding step.

【0003】[0003]

【発明が解決しようとする課題】従来のダイボンディン
グ装置において、粘着シート30と半導体チップ20と
の間の接着力あるいは粘着シート30の抵抗に起因し
て、突上ニードル10によって半導体チップ20を突き
上げた場合、図4に模式的に示すように、ピックアップ
ツール(図示せず)によって半導体チップ20がピック
アップできなくなるといった、半導体チップの突き上げ
不良を生じることがある。
In the conventional die bonding apparatus, the semiconductor needle 20 is pushed up by the push-up needle 10 due to the adhesive force between the adhesive sheet 30 and the semiconductor chip 20 or the resistance of the adhesive sheet 30. In this case, as schematically shown in FIG. 4, the semiconductor chip 20 may not be picked up by a pickup tool (not shown), which may cause a semiconductor chip push-up failure.

【0004】また、突上ニードル10によって突き上げ
たとき、CCDリニアセンサー用半導体チップのような
細長いものは折れて破損してしまうという問題もある。
Further, there is also a problem that when pushed up by the push-up needle 10, an elongated object such as a semiconductor chip for a CCD linear sensor is broken and damaged.

【0005】従って、本発明の目的は、半導体チップの
突き上げ不良あるいは突き上げ時の半導体チップ破損が
生じることのない、改良された突上ニードルを有するダ
イボンディング装置を提供することにある。
SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a die bonding apparatus having an improved thrusting needle which does not cause the semiconductor chip to be pushed up defectively or to be damaged during pushing up.

【0006】[0006]

【課題を解決するための手段】上記の目的は、突上ニー
ドルの軸線方向に平行及び/又は直角方向の振動が突上
ニードルに加えられることを特徴とするダイボンディン
グ装置によって達成され得る。突上ニードルには、電気
的あるいは機械的に振動を加えることができる。
The above object can be achieved by a die bonding apparatus characterized in that vibrations parallel and / or at right angles to the axial direction of the protruding needle are applied to the protruding needle. Vibration can be applied to the thrust needle electrically or mechanically.

【0007】[0007]

【作用】本発明のダイボンディング装置においては、突
上ニードル10によって半導体チップ20が突き上げら
れたとき、突上ニードルに加えられた振動が半導体チッ
プ20及び粘着シート30に伝わる。その結果、図1の
(A)あるいは(B)に模式的に示すように、半導体チ
ップ20の一部分あるいは全面が粘着シート30から容
易に剥離する。従って、突上ニードルによる半導体チッ
プの突き上げ不良が発生することはない。
In the die bonding apparatus of the present invention, when the semiconductor chip 20 is pushed up by the push-up needle 10, the vibration applied to the push-up needle is transmitted to the semiconductor chip 20 and the adhesive sheet 30. As a result, a part or the whole surface of the semiconductor chip 20 is easily peeled off from the adhesive sheet 30, as schematically shown in FIG. Therefore, the push-up needle does not cause the push-up failure of the semiconductor chip.

【0008】尚、半導体チップの大きさ、半導体チップ
と粘着シートとの間の接着力、粘着シートの抵抗等にも
依存するが、種々の試験の結果から、突上ニードルに加
える振動の振動数は1乃至15kHzであることが好ま
しいことが判明した。また、突上ニードルの先端に加え
られる振動の振幅は0.5乃至50μmであることが望
ましい。
Although it depends on the size of the semiconductor chip, the adhesive force between the semiconductor chip and the pressure sensitive adhesive sheet, the resistance of the pressure sensitive adhesive sheet, etc., the frequency of the vibration applied to the bump needle is shown from the results of various tests. Has been found to be preferably between 1 and 15 kHz. Moreover, it is desirable that the amplitude of the vibration applied to the tip of the protruding needle is 0.5 to 50 μm.

【0009】[0009]

【実施例】図2(A)に本発明のダイボンディング装置
の突上ニードル部分の拡大正面図を示す。7本の突上ニ
ードル10がニードルホルダー12に取り付けられてい
る。図2(A)中、20は半導体チップ、30は粘着シ
ートである。
EXAMPLE FIG. 2A shows an enlarged front view of a protruding needle portion of the die bonding apparatus of the present invention. Seven protruding needles 10 are attached to a needle holder 12. In FIG. 2A, 20 is a semiconductor chip and 30 is an adhesive sheet.

【0010】図2(A)に示したニードルホルダー12
は、突上ニードル用XYテーブル(図示せず)上に取り
付けられている。突上ニードル用XYテーブルの移動に
よって、ニードルホルダー12を、粘着シート30に取
り付けられた半導体チップ20の下方に位置させる。次
いでバキュームホルダー(図示せず)によって、ピック
アップすべき半導体チップの周囲にある半導体チップを
固定する。
The needle holder 12 shown in FIG.
Are mounted on an XY table (not shown) for the thrust needle. The needle holder 12 is positioned below the semiconductor chip 20 attached to the adhesive sheet 30 by moving the XY table for the protruding needle. Then, the semiconductor chip around the semiconductor chip to be picked up is fixed by a vacuum holder (not shown).

【0011】次に、ニードルホルダー12をマイクロメ
ータヘッド(図示せず)によって上方に移動させると同
時に、ニードルホルダー12を振動子(図示せず)によ
って振動させる。尚、振動子は、ニードルホルダーの下
方に配置され、ニードルホルダーと連結しており、発振
器によって振動させられる。振動の方向は突上ニードル
の軸線方向に対して水平又は垂直方向である。また、振
動数は1乃至50kHzであり、突上ニードルの先端に
加えられる振動の振幅を15μmとした。
Next, the needle holder 12 is moved upward by a micrometer head (not shown), and at the same time, the needle holder 12 is vibrated by a vibrator (not shown). The vibrator is disposed below the needle holder, is connected to the needle holder, and is vibrated by the oscillator. The direction of vibration is horizontal or vertical to the axial direction of the ascending needle. The frequency is 1 to 50 kHz, and the amplitude of vibration applied to the tip of the protruding needle is 15 μm.

【0012】ニードルホルダー12が上方に移動させら
れると、突上ニードル10は粘着シート30及び半導体
チップ20を上方に突き上げる。突上ニードル10に加
えられた振動が粘着シート30及び半導体チップ20に
伝わり、半導体チップ20の一部分が粘着シート30か
ら剥離する(図1(A)参照)。突き上げられた半導体
チップ20は、図示していないピックアップツールによ
って容易にピックアップされ、次のダイボンディング工
程に送られる。
When the needle holder 12 is moved upward, the push-up needle 10 pushes up the adhesive sheet 30 and the semiconductor chip 20. The vibration applied to the protrusion needle 10 is transmitted to the adhesive sheet 30 and the semiconductor chip 20, and a part of the semiconductor chip 20 is peeled off from the adhesive sheet 30 (see FIG. 1A). The semiconductor chip 20 pushed up is easily picked up by a pickup tool (not shown) and sent to the next die bonding step.

【0013】あるいは、突上ニードル10が粘着シート
30及び半導体チップ20を上方に突き上げとき、突上
ニードル10が粘着シート30を貫通し、半導体チップ
20の全面が粘着シート30と剥離した状態で突上ニー
ドル10によって突き上げられるようにしてもよい(図
1(B)参照)。突き上げられた半導体チップ20は、
図示していないピックアップツールによって容易にピッ
クアップされ、次のダイボンディング工程に送られる。
Alternatively, when the push-up needle 10 pushes the adhesive sheet 30 and the semiconductor chip 20 upward, the push-up needle 10 penetrates the adhesive sheet 30, and the entire surface of the semiconductor chip 20 is peeled off from the adhesive sheet 30. It may be pushed up by the upper needle 10 (see FIG. 1B). The semiconductor chip 20 pushed up is
It is easily picked up by a pick-up tool (not shown) and sent to the next die bonding step.

【0014】ニードルホルダー12における突上ニード
ル10は、図3(A)の拡大平面図に示すように1列に
配置しても、複数列にて配置してもよいし、更には図3
(B)乃至(F)の拡大平面図に示すように千鳥状に配
置してもよい。突上ニードルを1列に配置した場合、複
数の突上ニードルの先端を結んだ直線は、図2(A)に
示すように水平面と平行であっても、あるは図2(B)
に拡大正面図を示すように一定の角度θを成して傾斜し
ていてもよい。尚、図2(B)において、Lは突上ニー
ドルの先端を結んだ直線の延長線、Hは水平線である。
突上ニードルを複数列あるいは千鳥状に配置した場合、
複数の突上ニードルの先端を含む平面は、図2(A)、
(B)に示すと同様に、水平面と平行であってもあるい
は一定の角度を成して傾斜していてもよい。
The protruding needles 10 in the needle holder 12 may be arranged in one row as shown in the enlarged plan view of FIG. 3A, or may be arranged in a plurality of rows.
They may be arranged in a staggered manner as shown in the enlarged plan views of (B) to (F). When the protruding needles are arranged in one row, the straight line connecting the tips of the plurality of protruding needles may be parallel to the horizontal plane as shown in FIG.
In addition, as shown in the enlarged front view, it may be inclined at a constant angle θ. In FIG. 2 (B), L is a straight extension line connecting the tips of the protruding needles, and H is a horizontal line.
If the protruding needles are arranged in multiple rows or in a staggered pattern,
The plane including the tips of the plurality of protruding needles is shown in FIG.
As shown in (B), it may be parallel to the horizontal plane or may be inclined at a constant angle.

【0015】以上、本発明を好ましい実施例に基づき説
明したが、本発明のダイボンディング装置はこれらの実
施例に限定されるものではない。突上ニードルの本数、
突上ニードルの配置は、半導体チップの大きさ、半導体
チップの配列状態、粘着シートと半導体チップとの間の
接着力、粘着シートの抵抗、ダイボンディング装置の大
きさ等に依存して適宜変更することができる。
Although the present invention has been described based on the preferred embodiments, the die bonding apparatus of the present invention is not limited to these embodiments. Number of thrust needles,
The position of the push-up needle is appropriately changed depending on the size of the semiconductor chip, the arrangement state of the semiconductor chips, the adhesive force between the adhesive sheet and the semiconductor chip, the resistance of the adhesive sheet, the size of the die bonding device, etc. be able to.

【0016】突上ニードルに振動を加える電気的な手段
として圧電素子等を使用し、圧電素子に突上ニードルを
セットすることができる。また機械的な手段として、振
動モーター、バイブレーター等を使用することができ
る。また、振動の方向を突上ニードルの軸線方向と直角
方向、あるいは平行方向と直角方向の両方向とすること
ができる。
A piezoelectric element or the like can be used as an electric means for applying vibration to the protruding needle, and the protruding needle can be set on the piezoelectric element. Further, as a mechanical means, a vibration motor, a vibrator or the like can be used. Further, the direction of vibration may be in a direction perpendicular to the axial direction of the protruding needle, or in both directions parallel and perpendicular.

【0017】[0017]

【発明の効果】本発明のダイボンディング装置において
は、突上ニードルによって半導体チップを突き上げたと
き、突上ニードルに加えられた振動が粘着シート及び半
導体チップに伝わる。その結果、半導体チップの一部分
あるいは全面が粘着シートから容易に剥離するので、突
上ニードルによる半導体チップの突き上げ不良の発生を
防止できる。また、半導体チップの破損を防止すること
ができるので、歩留まりが向上する。更に、半導体チッ
プのピックアップに要する時間を短縮することができ
る。
In the die bonding apparatus of the present invention, when the semiconductor chip is pushed up by the push-up needle, the vibration applied to the push-up needle is transmitted to the adhesive sheet and the semiconductor chip. As a result, a part or the whole surface of the semiconductor chip is easily peeled off from the adhesive sheet, so that it is possible to prevent the push-up needle from causing the semiconductor chip to be pushed up. Further, since damage to the semiconductor chips can be prevented, the yield is improved. Furthermore, the time required to pick up the semiconductor chip can be shortened.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明のダイボンディング装置による半導体チ
ップの突き上げ状態を表す模式図である。
FIG. 1 is a schematic view showing a state where a semiconductor chip is pushed up by a die bonding apparatus of the present invention.

【図2】本発明のダイボンディング装置の突上ニードル
及びニードルホルダーの拡大平面図である。
FIG. 2 is an enlarged plan view of a protrusion needle and a needle holder of the die bonding apparatus of the present invention.

【図3】突上ニードルの配列状態を示す拡大平面図であ
る。
FIG. 3 is an enlarged plan view showing an array state of the thrust needles.

【図4】従来のダイボンディング装置における半導体チ
ップの突き上げ不良状態を示す模式図である。
FIG. 4 is a schematic view showing a semiconductor chip push-up failure state in a conventional die bonding apparatus.

【符号の説明】[Explanation of symbols]

10 突上ニードル 12 ニードルホルダー 20 半導体チップ 30 粘着シート 10 Projection needle 12 Needle holder 20 Semiconductor chip 30 Adhesive sheet

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】突上ニードルの軸線方向に平行及び/又は
直角方向の振動が突上ニードルに加えられることを特徴
とするダイボンディング装置。
1. A die bonding apparatus, wherein vibrations parallel and / or perpendicular to the axial direction of the protruding needle are applied to the protruding needle.
【請求項2】突上ニードルに加えられる振動数は1乃至
15kHzであることを特徴とする請求項1に記載のダ
イボンディング装置。
2. The die bonding apparatus according to claim 1, wherein the vibration frequency applied to the bump needle is 1 to 15 kHz.
JP29772791A 1991-10-18 1991-10-18 Die bonding apparatus Pending JPH05109869A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP29772791A JPH05109869A (en) 1991-10-18 1991-10-18 Die bonding apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29772791A JPH05109869A (en) 1991-10-18 1991-10-18 Die bonding apparatus

Publications (1)

Publication Number Publication Date
JPH05109869A true JPH05109869A (en) 1993-04-30

Family

ID=17850400

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29772791A Pending JPH05109869A (en) 1991-10-18 1991-10-18 Die bonding apparatus

Country Status (1)

Country Link
JP (1) JPH05109869A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003077310A1 (en) * 2002-03-11 2003-09-18 Hitachi, Ltd. Semiconductor device and its manufacturing method
JP2005117019A (en) * 2003-09-17 2005-04-28 Renesas Technology Corp Method of manufacturing semiconductor device
JP2009117867A (en) * 2009-02-16 2009-05-28 Renesas Technology Corp Method of manufacturing semiconductor apparatus
US7757742B2 (en) * 2007-07-31 2010-07-20 Asm Assembly Automation Ltd Vibration-induced die detachment system

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003077310A1 (en) * 2002-03-11 2003-09-18 Hitachi, Ltd. Semiconductor device and its manufacturing method
CN100334706C (en) * 2002-03-11 2007-08-29 株式会社瑞萨科技 Semiconductor device and its manufacturing method
US7265035B2 (en) 2002-03-11 2007-09-04 Renesas Technology Corp. Semiconductor device and its manufacturing method
JP2005117019A (en) * 2003-09-17 2005-04-28 Renesas Technology Corp Method of manufacturing semiconductor device
JP4574251B2 (en) * 2003-09-17 2010-11-04 ルネサスエレクトロニクス株式会社 Manufacturing method of semiconductor device
KR101244482B1 (en) * 2003-09-17 2013-03-18 가부시키가이샤 르네사스 히가시 니혼 세미콘덕터 Method of manufacturing semiconductor device
US7757742B2 (en) * 2007-07-31 2010-07-20 Asm Assembly Automation Ltd Vibration-induced die detachment system
JP2009117867A (en) * 2009-02-16 2009-05-28 Renesas Technology Corp Method of manufacturing semiconductor apparatus

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