JPH05109811A - Wire bonder - Google Patents
Wire bonderInfo
- Publication number
- JPH05109811A JPH05109811A JP3293856A JP29385691A JPH05109811A JP H05109811 A JPH05109811 A JP H05109811A JP 3293856 A JP3293856 A JP 3293856A JP 29385691 A JP29385691 A JP 29385691A JP H05109811 A JPH05109811 A JP H05109811A
- Authority
- JP
- Japan
- Prior art keywords
- wiring board
- wire bonding
- guide rail
- heating
- wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/78251—Means for applying energy, e.g. heating means in the lower part of the bonding apparatus, e.g. in the apparatus chuck
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/859—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving monitoring, e.g. feedback loop
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3511—Warping
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、配線基板上の半導体
素子とこの配線基板とを結線するワイヤボンディング装
置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wire bonding apparatus for connecting a semiconductor element on a wiring board and this wiring board.
【０００２】[0002]
【従来の技術】図５及び図６は従来のワイヤボンディン
グ装置を示す斜視図及び側面図であり、各図において、
１は一対のガイドレール、２はガイドレール１に沿って
搬送される配線基板、３ａ，３ｂ，３ｃはガイドレール
１間に配された加熱用の金属ブロック、４は金属ブロッ
ク３ａ，３ｂ，３ｃを加熱するための巻線抵抗ヒータ、
５は配線基板２を金属ブロック３ａ，３ｂ，３ｃ上に搬
送する搬送アーム、６は金属ブロック３ｃのステージに
配されたワイヤボンディングヘッド、７は配線基板２に
装着された半導体素子で、ワイヤボンディングヘッド６
により配線基板２と結線される。８は金属ブロック３
ａ，３ｂ，３ｃの温度制御のための温度検出素子であ
る。2. Description of the Related Art FIGS. 5 and 6 are perspective and side views showing a conventional wire bonding apparatus.
Reference numeral 1 is a pair of guide rails, 2 is a wiring board conveyed along the guide rails 1, 3a, 3b and 3c are heating metal blocks arranged between the guide rails 1 and 4 are metal blocks 3a, 3b and 3c. Winding resistance heater for heating
Reference numeral 5 is a transfer arm for transferring the wiring board 2 onto the metal blocks 3a, 3b, 3c, 6 is a wire bonding head arranged on the stage of the metal block 3c, and 7 is a semiconductor element mounted on the wiring board 2, and is used for wire bonding. Head 6
Is connected to the wiring board 2. 8 is a metal block 3
It is a temperature detecting element for temperature control of a, 3b and 3c.
【０００３】次に動作について説明する。配線基板２に
ガラス板等から成る低熱伝導率基板を用いた場合につい
て説明する。ガイドレール１にセットされた配線基板２
には、ワイヤボンディングを施すべき半導体素子７が接
着されている。この配線基板２は、搬送アーム５により
先ず金属ブロック３ａ上に送られる。金属ブロック３ａ
は巻線抵抗ヒータ４が挿入されて特定の温度に加熱され
ている。配線基板２はこの金属ブロック３ａにより所定
時間予備加熱された後、搬送アーム５により、金属ブロ
ック３ａの温度よりも高温に加熱された金属ブロック３
ｂ上に搬送される。Next, the operation will be described. A case where a low thermal conductivity substrate made of a glass plate or the like is used as the wiring substrate 2 will be described. Wiring board 2 set on guide rail 1
A semiconductor element 7 to be wire-bonded is adhered to this. The wiring board 2 is first transferred onto the metal block 3a by the transfer arm 5. Metal block 3a
The winding resistance heater 4 is inserted and heated to a specific temperature. The wiring board 2 is preheated by the metal block 3a for a predetermined time and then heated by the transfer arm 5 to a temperature higher than that of the metal block 3a.
It is conveyed on b.
【０００４】ここで同様に所定時間予備加熱された後、
配線基板２は金属ブロック３ｂの加熱温度と同等もしく
は高温に加熱された金属ブロック３ｃ上に搬送されて、
ワイヤボンディングヘッド６により半導体素子７と配線
基板２とがワイヤボンディングを施される。ここで金属
ブロック３ａ，３ｂは、金属ブロック３ｃの温度に配線
基板２の温度を昇温するための予備加熱ステージとなっ
ている。Similarly, after being preheated for a predetermined time,
The wiring board 2 is conveyed onto the metal block 3c heated to a temperature equal to or higher than the heating temperature of the metal block 3b,
The semiconductor element 7 and the wiring board 2 are wire-bonded by the wire bonding head 6. Here, the metal blocks 3a and 3b are preheating stages for raising the temperature of the wiring board 2 to the temperature of the metal block 3c.
【０００５】この方式では、図６に示すように配線基板
２は、金属ブロック３ａ，３ｂ，３ｃとの接触２ｂによ
る伝導伝熱により昇温される。なお、金属ブロック３
ａ，３ｂ，３ｃの温度は温度検出素子８により制御され
る。In this system, as shown in FIG. 6, the wiring board 2 is heated by conduction heat transfer due to the contact 2b with the metal blocks 3a, 3b, 3c. The metal block 3
The temperatures of a, 3b and 3c are controlled by the temperature detecting element 8.
【０００６】[0006]
【発明が解決しようとする課題】従来のワイヤボンディ
ング装置は以上のように構成されているので、大型のガ
ラス配線基板や配線基板を張り合わせた構造の配線基板
の場合は、基板のソリの発生は回避できないものであ
り、図６に示すように、配線基板２にソリ２ａが生じた
場合、接触部２ｂと非接触部２ｃ間の温度差が大きくな
り、配線基板２に割れを発生させる。このため、予備加
熱ステージを図５に示すように、２ステージもしくはそ
れ以上設けたりしなければならず、また、予備加熱時間
も長時間に設定することが必要で、装置の大型化やタク
トタイムが長時間化するなどの問題点があるうえ、図５
に示すように金属ブロック３ａ，３ｂ，３ｃ上をすべら
せて搬送する構造のため、配線基板２の金属ブロック３
ａ，３ｂ，３ｃとの接触部２ｂにキズを発生させること
があり、品質上も問題が生じ、また、金属ブロック３
ａ，３ｂ，３ｃをガイドレール１ではさみ込む構造のた
め、配線基板２の外形サイズを変更した場合は、各々の
金属ブロック３ａ，３ｂ，３ｃの交換を行なわねばなら
ず、機種切り換えにも時間を要する等の問題点があっ
た。Since the conventional wire bonding apparatus is constructed as described above, in the case of a large-sized glass wiring board or a wiring board having a structure in which the wiring boards are bonded together, warpage of the board does not occur. This is unavoidable, and as shown in FIG. 6, when the warp 2a is generated on the wiring board 2, the temperature difference between the contact portion 2b and the non-contact portion 2c becomes large and the wiring board 2 is cracked. Therefore, as shown in FIG. 5, the preheating stage must be provided in two stages or more, and it is necessary to set the preheating time to a long time. In addition to the problem that it takes a long time,
As shown in FIG. 3, since the metal blocks 3a, 3b, 3c are slid and transported on the metal blocks 3a, 3b, 3c,
The contact part 2b with the a, 3b, and 3c may be scratched, which causes a problem in quality, and the metal block 3
Since a, 3b, 3c are sandwiched by the guide rails 1, when the outer size of the wiring board 2 is changed, the metal blocks 3a, 3b, 3c must be replaced, and it takes time to switch models. There was a problem such as requiring
【０００７】この発明は上記のような問題点を解消する
ためになされたもので、配線基板の割れを無くすことが
できるとともに、機種切り換え時間の短縮化、装置の小
型化を実現できるワイヤボンディング装置を得ることを
目的とする。The present invention has been made in order to solve the above problems, and it is possible to eliminate cracks in the wiring board, shorten the time for switching models, and realize downsizing of the apparatus. Aim to get.
【０００８】[0008]
【課題を解決するための手段】請求項１の発明に係るワ
イヤボンディング装置は、配線基板の加熱に赤外線ヒー
タを用いたものである。The wire bonding apparatus according to the invention of claim 1 uses an infrared heater for heating the wiring board.
【０００９】請求項２の発明に係るワイヤボンディング
装置は、配線基板の加熱に熱風送風機を用いたものであ
る。The wire bonding apparatus according to the invention of claim 2 uses a hot air blower for heating the wiring substrate.
【００１０】請求項３の発明に係るワイヤボンディング
装置は、上記赤外線ヒータ又は熱風送風機を用いると共
に、ガイドレールを加熱するようにしたものである。A wire bonding apparatus according to a third aspect of the present invention uses the infrared heater or the hot air blower and heats the guide rail.
【００１１】[0011]
【作用】請求項１，２の発明におけるワイヤボンディン
グ装置は、配線基板のソリやウネリに関係なく温度分布
が均一になると共に、所定の温度まで加熱するのに多段
の昇温ステージが不必要になるので、装置が小型化で
き、さらに熱源と配線基板とが接触しないため、キズの
発生がなく品質も良好となる。According to the wire bonding apparatus of the present invention, the temperature distribution becomes uniform irrespective of warping or swelling of the wiring board, and a multi-stage temperature raising stage is unnecessary for heating to a predetermined temperature. As a result, the device can be downsized, and since the heat source and the wiring board do not come into contact with each other, no scratches occur and the quality is good.
【００１２】請求項３の発明におけるワイヤボンディン
グ装置は、ガイドレールを加熱することにより、配線基
板の温度分布をさらに均一にすることができる。In the wire bonding apparatus according to the third aspect of the present invention, the temperature distribution of the wiring board can be made more uniform by heating the guide rail.
【００１３】[0013]
【実施例】実施例１．以下、請求項１の発明の一実施例
を図について説明する。図１，図２においては図５，図
６と対応する部分には同一符号を付して説明を省略す
る。図１，図２において、９ａ，９ｂは赤外線ヒータ、
１０ａは赤外線ヒータ９ａにより構成される予備加熱ス
テージ、１０ｂは赤外線ヒータ９ｂにより構成されるボ
ンディング加熱ステージである。EXAMPLES Example 1. An embodiment of the invention of claim 1 will be described below with reference to the drawings. In FIGS. 1 and 2, parts corresponding to those in FIGS. 5 and 6 are designated by the same reference numerals, and description thereof will be omitted. 1 and 2, 9a and 9b are infrared heaters,
Reference numeral 10a is a preheating stage composed of an infrared heater 9a, and 10b is a bonding heating stage composed of an infrared heater 9b.
【００１４】次に動作について説明する。配線基板２に
ガラス板等から成る低熱伝導率基板を用いた場合の基本
動作は図５に示した従来装置と同様であるが、この実施
例は予備加熱ステージ１０ａとボンディングステージ１
０ｂとの２ステージから構成され、各ステージの熱源は
赤外線ヒータ９ａ，９ｂとなる。温度検出部８ａは、予
備加熱ステージ１０ａの温度制御、８ｂはボンディング
ステージ１０ｂの温度制御を行う。Next, the operation will be described. The basic operation when a low thermal conductivity substrate made of a glass plate or the like is used for the wiring board 2 is the same as that of the conventional apparatus shown in FIG.
0b and two stages, and the heat source of each stage is the infrared heaters 9a and 9b. The temperature detector 8a controls the temperature of the preheating stage 10a, and 8b controls the temperature of the bonding stage 10b.
【００１５】また、図２に示すように配線基板２と熱源
の赤外線ヒータ９ａ，９ｂとは一定の間隔を設けて無接
触で配されている。このため予備加熱ステージ１０ａを
高温に加熱しても配線基板２は均一に加熱されるので、
割れが生じることがない。これによって予備加熱ステー
ジ１０ａは１段のみで充分となる。Further, as shown in FIG. 2, the wiring board 2 and the infrared heaters 9a and 9b serving as heat sources are arranged in a non-contact manner with a certain space therebetween. Therefore, the wiring board 2 is uniformly heated even if the preheating stage 10a is heated to a high temperature.
No cracks will occur. As a result, only one preheating stage 10a is sufficient.
【００１６】実施例２．なお、実施例１では、赤外線ヒ
ータ９ａ，９ｂを配線基板２の下方に設けた構成を示し
たが、図３に示すように赤外線ヒータ９ａ，９ｂを上下
に設けることにより、さらに温度分布の均一化が可能と
なるうえ、昇温時間の短縮化がはかれる。Example 2. Although the infrared heaters 9a and 9b are provided below the wiring substrate 2 in the first embodiment, the infrared heaters 9a and 9b are provided above and below as shown in FIG. It is possible to reduce the temperature rise time.
【００１７】実施例３．上記実施例１，２では加熱用熱
源に赤外線ヒータ９ａ，９ｂを用いた構造を示したが、
請求項２の発明の実施例を示す図４に示すように、熱源
として熱風送風機１１ａ，１１ｂを用いてもよい。ま
た、この熱風送風機１１ａ，１１ｂは配線基板２の上下
に設けてもよい。Embodiment 3. In the above-mentioned Embodiments 1 and 2, the structure using the infrared heaters 9a and 9b as the heat source for heating is shown.
As shown in FIG. 4 showing the embodiment of the invention of claim 2, hot air blowers 11a and 11b may be used as the heat sources. Further, the hot air blowers 11 a and 11 b may be provided above and below the wiring board 2.
【００１８】実施例４．さらに請求項３の発明として、
ガイドレール１を加熱金属ブロックとし、赤外線ヒータ
９ａ，９ｂ又は熱風送風機１１ａ，１１ｂと併用するこ
とで、温度分布の均一性をさらに向上させるようにして
も良い。その場合のガイドレール１の加熱手段としては
赤外線ヒータ，熱風送風機等が用いられる。Example 4. Further, as the invention of claim 3,
The guide rail 1 may be a heating metal block and may be used together with the infrared heaters 9a and 9b or the hot air blowers 11a and 11b to further improve the uniformity of temperature distribution. In that case, an infrared heater, a hot air blower, or the like is used as the heating means of the guide rail 1.
【００１９】[0019]
【発明の効果】以上のように、請求項１の発明は、加熱
用熱源として赤外線ヒータを用いる構成とした。また、
請求項２の発明は、加熱用熱源として熱風送風機を用い
る構成とした。As described above, according to the first aspect of the invention, the infrared heater is used as the heat source for heating. Also,
In the invention of claim 2, a hot air blower is used as a heating heat source.
【００２０】従って、請求項１，２の発明によれば、配
線基板の割れが皆無になると共に、装置を小型化でき、
また、タクトタイムの短縮化及び品質の向上等を図るこ
とができる効果がある。Therefore, according to the first and second aspects of the present invention, the wiring board is not cracked, and the device can be downsized.
Further, there is an effect that the tact time can be shortened and the quality can be improved.
【００２１】また、請求項３の発明によれば、赤外線ヒ
ータ又は熱風送風機を用いると共に、ガイドレールを加
熱するようにしたので、配線基板の温度分布をより均一
化できる効果がある。Further, according to the invention of claim 3, since the infrared heater or the hot air blower is used and the guide rail is heated, there is an effect that the temperature distribution of the wiring board can be made more uniform.
【図１】請求項１の発明の一実施例によるワイヤボンデ
ィング装置を示す斜視図である。FIG. 1 is a perspective view showing a wire bonding apparatus according to an embodiment of the present invention.
【図２】同ワイヤボンディング装置を示す側面図であ
る。FIG. 2 is a side view showing the wire bonding apparatus.
【図３】同ワイヤボンディング装置の他の実施例を示す
側面図である。FIG. 3 is a side view showing another embodiment of the wire bonding apparatus.
【図４】請求項２の発明の一実施例によるワイヤボンデ
ィング装置を示す側面図である。FIG. 4 is a side view showing a wire bonding apparatus according to an embodiment of the present invention.
【図５】従来のワイヤボンディング装置を示す斜視図で
ある。FIG. 5 is a perspective view showing a conventional wire bonding apparatus.
【図６】同ワイヤボンディング装置を示す側面図であ
る。FIG. 6 is a side view showing the wire bonding apparatus.
１ ガイドレール ２ 配線基板 ６ ワイヤボンディングヘッド ７ 半導体素子 ９ａ，９ｂ 赤外線ヒータ １１ａ，１１ｂ 熱風送風機 1 Guide Rail 2 Wiring Board 6 Wire Bonding Head 7 Semiconductor Element 9a, 9b Infrared Heater 11a, 11b Hot Air Blower
Claims (3)
子が接着されている配線基板を搬送するガイドレール
と、上記ガイドレールに沿って所定位置に搬送された上
記配線基板をこの配線基板とは無接触で予備加熱する赤
外線ヒータと、上記予備加熱された配線基板を他の所定
位置でこの配線基板とは無接触でボンディングに適した
所定温度に加熱する赤外線ヒータと、上記他の所定位置
において上記半導体素子に対してワイヤボンディングを
施すワイヤボンディングヘッドとを備えたワイヤボンデ
ィング装置。1. A guide rail for transporting a wiring board to which a semiconductor element to be wire-bonded is adhered, and the wiring board transported to a predetermined position along the guide rail without contacting the wiring board. An infrared heater for preheating, an infrared heater for heating the preheated wiring board at another predetermined position without contact with the wiring board to a predetermined temperature suitable for bonding, and the semiconductor element at the other predetermined position. A wire bonding apparatus including a wire bonding head for performing wire bonding on a wire.
子が接着されている配線基板を搬送するガイドレール
と、上記ガイドレールに沿って所定位置に搬送された上
記配線基板を予備加熱する熱風送風機と、上記予備加熱
された配線基板を他の所定位置でボンディングに適した
所定温度に加熱する熱風送風機と、上記他の所定位置に
おいて上記半導体素子に対してワイヤボンディングを施
すワイヤボンディングヘッドとを備えたワイヤボンディ
ング装置。2. A guide rail that conveys a wiring substrate to which a semiconductor element to be wire-bonded is adhered, a hot air blower that preheats the wiring substrate that has been conveyed to a predetermined position along the guide rail, and Wire bonding provided with a hot air blower for heating a preheated wiring board to a predetermined temperature suitable for bonding at another predetermined position, and a wire bonding head for performing wire bonding to the semiconductor element at the other predetermined position apparatus.
設けたことを特徴とする請求項１，２に記載のワイヤボ
ンディング装置。3. The wire bonding apparatus according to claim 1, further comprising heating means for heating the guide rail.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3293856A JPH05109811A (en) | 1991-10-15 | 1991-10-15 | Wire bonder |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3293856A JPH05109811A (en) | 1991-10-15 | 1991-10-15 | Wire bonder |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05109811A true JPH05109811A (en) | 1993-04-30 |
Family
ID=17800045
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3293856A Pending JPH05109811A (en) | 1991-10-15 | 1991-10-15 | Wire bonder |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05109811A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6384366B1 (en) * | 2000-06-12 | 2002-05-07 | Advanced Micro Devices, Inc. | Top infrared heating for bonding operations |
| US8444044B2 (en) | 2008-03-10 | 2013-05-21 | Micron Technology, Inc. | Apparatus and methods for forming wire bonds |
-
1991
- 1991-10-15 JP JP3293856A patent/JPH05109811A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6384366B1 (en) * | 2000-06-12 | 2002-05-07 | Advanced Micro Devices, Inc. | Top infrared heating for bonding operations |
| US8444044B2 (en) | 2008-03-10 | 2013-05-21 | Micron Technology, Inc. | Apparatus and methods for forming wire bonds |
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