JPH05102051A - Semiconductor processor - Google Patents

Abstract

PURPOSE:To realize compound semiconductor liquid growth of a sealed tube which can two or more epitaxial layers having different compositions and different impurity concentrations by giving a boat sealed in a sealed tube inclination and rotation and by bringing melts into contact with substrates one after another to perform epitaxial growth. CONSTITUTION:A boat 1 sealed in a sealed tube is provided with a first groove 11 to fix a substrate 6, second grooves 2,4,5 to reserve melts, and a third groove 3 to connect these grooves. Each of the second grooves 2,4,5 stores a melt different in crystal composition and in impurity concentration, and the boat 1 is given rotation and inclination by a melt transfer mechanism to transfer the melts onto the substrate 6 one after another for epitaxial growth. This process facilitates formation of an epitaxial film having a multilayered structure on the substrate, and using the sealed tube method can provide an excellent and homogeneous multilayered epitaxial film even in the case of containing a substance of high vapor pressure in a semiconductor material.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus, and more particularly to a semiconductor epitaxial growth apparatus using a sealed tube liquid phase growth method.

[0002]

2. Description of the Related Art FIGS. 24 (a) to 24 (c) are side sectional views showing a liquid phase growth method for a conventional sealed tube in the order of steps. In the figure, 31 is a quartz tube, 32 is a substrate, and 33 is a melt. Is.

25 (a) to 25 (d) are side sectional views showing a conventional open tube liquid phase growth method in the order of steps. In the figure, 41 is a graphite boat, 42 is a substrate, and 43 is graphite. Made of a slide boat, 44 is a first semiconductor melt (also referred to as a first melt), and 45 is a second semiconductor melt (also referred to as a second melt).

Next, the process of liquid phase growth of the sealed tube will be described. As shown in FIG. 24 (a), the vacuum-sealed substrate 2 and melt 3 are separately arranged in an inclined quartz tube 1, and the quartz tube 1 is placed in a furnace (not shown). Is kept at a high temperature. Next, as shown in FIG. 24B, when the quartz tube 1 is made horizontal, the substrate 2 is immersed in the melt 3. When the temperature of the melt 3 is lowered in this state, the semiconductor thin film grows epitaxially on the substrate 2. After the film has a predetermined thickness, the melt 3 and the substrate 2 are separated again by tilting the quartz tube 1 as shown in FIG. 24 (c), and the growth is completed.

Next, the process of liquid phase growth of an open tube will be described. As shown in FIG. 25A, the substrate 42 is fixed in the groove provided in the graphite boat 41. The slide boat 43 is slidably provided on the graphite boat 41, and the first melt 44 and the second melt 45 are held in two chambers of the slide boat 43, respectively.
These are held at a high temperature in a furnace (not shown) in the arrangement shown in FIG. 25 (a). Then, the slide boat 43 is moved to bring the first melt 44 and the substrate 42 into contact with each other (FIG. 25).
(b)). If the temperature of the first melt 44 is lowered in this state,
The first-layer semiconductor film 46 grows on the substrate 42. Further, the slide boat 43 is moved to move the second melt 45.
Are brought into contact with the substrate 42 (FIG. 25 (c)). In this state,
When the temperature of the second melt 45 is lowered, the second-layer semiconductor film 47 grows on the first-layer semiconductor film 46 on the substrate 42. Then, the slide boat 43 is moved to separate the second melt 45 and the substrate 42, thereby completing the growth (FIG. 25 (d)). FIG. 25 (e) is an enlarged view showing the substrate after the crystal growth is completed.

[0006]

Since the conventional liquid phase epitaxy method for a sealed tube is performed through the above steps, only one epitaxial layer can be grown and a laminated film of two or more layers is formed. There was a problem that I could not.

Further, although the conventional open-tube liquid phase growth method can form a multilayer film, when the melt contains a substance having a high vapor pressure, the composition of the melt varies at high temperature. And
There is a problem that stable crystal growth cannot be performed.

The present invention has been made in order to solve the above problems, and is a compound semiconductor liquid phase epitaxy method of a sealed tube capable of growing two or more epitaxial layers having different compositions or different impurity concentrations. It is an object of the present invention to provide a semiconductor manufacturing apparatus that realizes the above.

[0009]

A semiconductor manufacturing apparatus according to the present invention comprises a first groove portion for fixing a substrate, two or more second groove portions for accumulating a melt for crystal growth, and a second groove portion for storing a melt for crystal growth. A boat provided with a first groove and a third groove for connecting the second groove, a sealed tube container in which the boat is enclosed, and the boat is tilted or rotated to melt in the first to third grooves. A melt moving mechanism for moving the liquid is provided, and the melt is sequentially brought into contact with the substrate for crystal growth.

Further, the semiconductor manufacturing apparatus according to the present invention is
A first groove portion for fixing the substrate, two or more second groove portions for accumulating a melt for crystal growth, and a third groove portion for connecting the first and second groove portions A boat, a sealed tube container in which the boat is enclosed, and a melt moving mechanism that tilts and rotates the boat to move the melt in the first to third grooves, and the melt is placed on the substrate. A second groove portion is disposed only in one of the first groove portions, and a fourth groove for accumulating a melt after crystal growth is stored in the other of the first groove portions. A groove portion and a fifth groove portion for connecting the groove portion and the first groove portion are provided, and crystal growth is sequentially performed on the substrate from the melt of the second groove portion on the side close to the first groove portion by the melt moving mechanism. After the growth, this is moved to the fourth groove through the fifth groove.

Further, the semiconductor manufacturing apparatus according to the present invention is
A first groove portion for fixing the substrate, two or more second groove portions for accumulating a melt for crystal growth, and a third groove portion for connecting the first and second groove portions A boat, a sealed tube container in which the boat is sealed, and a melt moving mechanism that tilts the boat to move the melt in the first to third grooves, and sequentially contacts the melt with the substrate. The second groove portions are arranged on both sides of the first groove portion, and the melt moving mechanism moves the melt accumulated in the second groove portions onto the substrate on both sides of the substrate. It was designed to be performed alternately.

Further, the semiconductor manufacturing apparatus according to the present invention is
In the case where the above-mentioned second groove portions are arranged on both sides of the first groove portion, the melt moving mechanism repeatedly moves the melt of the second groove portions onto the substrate from the both sides of the substrate alternately to form the second groove portion on the substrate. A multilayer film having a periodic structure in the film thickness direction is formed.

Further, the semiconductor manufacturing apparatus according to the present invention is
The above boat is provided with a vapor generation source for giving a saturated vapor pressure in the sealed tube container.

[0014]

Since the semiconductor manufacturing apparatus of the present invention uses the sealed tube method, it is possible to grow a good quality and homogeneous crystal even when the semiconductor material contains a substance having a high vapor pressure.

Further, the two or more melts stored in the second groove are brought into contact with the substrate one by one through the third groove by the melt moving mechanism so that the crystal composition and the impurity concentration are different on the substrate. The growth layer can be formed in multiple layers.

Further, in the case where the second groove portions are arranged on both sides of the first groove portion, and in the case where the melt moving mechanism repeatedly moves the melt on the substrate from both sides of the substrate, the melt is moved on the substrate. Any number of growth layers having different crystal compositions and impurity concentrations are formed in the film thickness direction, and the superlattice structure is obtained by periodically performing the growth layers.

Further, in the case where the boat is provided with the vapor generation source, it is possible to suppress the evaporation of the element having a high vapor pressure from the melt and to prevent the composition of the crystal growing on the substrate from varying. it can.

[0018]

DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 shows a shape of a graphite boat used in a semiconductor manufacturing apparatus according to a first embodiment of the present invention, that is, a semiconductor epitaxial growth apparatus using a liquid-phase growth method for a sealed tube. ) Is a perspective view. In these figures, 1 is a graphite boat enclosed in a sealed tube container, and 1'is a first groove portion provided in the graphite boat 1. Reference numeral 6 denotes a semiconductor wafer fixed to the first groove portion 1 ′ of the graphite boat 1, and reference numerals 2, 4 and 5 denote a melt (hereinafter referred to as melt) provided on one side of the first groove portion 1 ′ on the graphite boat 1. Second groove portions functioning as reservoirs, 2 for the first melt reservoir, 4 for the second melt reservoir, and 5 for the third melt reservoir. Reference numeral 7 denotes a fourth groove portion provided on the opposite side of the first groove portion 1 ′ from the second groove portions 2, 4, 5 and serving as a melt waste liquid reservoir. 3 is a first melt reservoir 2 and a second melt reservoir 4, a second melt reservoir 4 and a third melt reservoir 5,
A third groove portion for connecting the third melt reservoir 5 and the first groove portion 1 ′, and a connection between the first groove portion 1 ′ and the melt waste liquid reservoir (fourth groove portion) 7. The first, second, and third melt reservoirs 2, 4, and 5 are each divided into two parts by chevron-shaped partitions, and the boat 1 is appropriately inclined by a melt moving mechanism (not shown). In case of melt pool 2,4,5
It has a structure that allows smooth movement of the melt placed in. The third groove 3 is also provided with a similar chevron structure so that when the boat 1 is tilted to an appropriate degree by the melt moving mechanism, the reverse flow of the melt contained in the melt reservoirs 2, 4 and 5 is prevented. Consideration is given to prevent it.

2 to 10 show a liquid phase growth method of a sealed tube using the graphite boat shown in FIG. 1 in order of each step. In each figure, (a) shows the posture of the graphite boat 1. The figure seen as the inclination in the long side direction (the AA 'line direction in the figure), (b) shows the posture of the graphite boat 1 by the rotation angle around the AA' line as seen from the A'side,
(c) is a top view of the graphite boat 1. In these figures, the same reference numerals as those in FIG. 1 indicate the same parts, 9 is a first melt, 8 is a second melt in which the combination of the elements constituting the crystal and the composition ratio are different from the first melt 9. is there.
As the first melt 9 and the second melt 8, for example, a compound semiconductor melt containing at least two elements of group II, group III, group IV, group V, and group VI is used.

The process flow will be described below. First, the graphite boat 1 is moved to the A position by the melt moving mechanism.
The inclination in the A'line direction and the rotation angle around the AA 'line as viewed from the A'side are set to 0 degree, the second melt 8 is put in the first melt reservoir 2 of the graphite boat 1, and the third melt reservoir is set. The first melt is put in 5 and the substrate 6 is set at a predetermined position (FIG. 2).

Next, this is placed in a glass sealed tube (not shown), and these are put together into a furnace (not shown) and heated to a high temperature. At this time, the sealed tube is filled with saturated vapor of semiconductor gas.

Next, the graphite boat 1 is rotated clockwise as viewed from the A'side while keeping the AA 'direction horizontal. This causes the melt to move within the same melt reservoir (Fig. 3).

Next, with the graphite boat 1 kept rotating at the same speed, an inclination is given to A so that A'is lowered. As a result, the second melt 8 becomes the first melt reservoir 2
To the second melt reservoir 4 and the first melt 9 moves from the third melt reservoir 5 onto the semiconductor wafer 6 (FIG. 4).

Next, the graphite boat 1 is returned to the horizontal position, and the melt temperature is lowered in a state where the first melt 9 and the wafer 6 are in contact with each other, so that the first semiconductor layer of the first melt 9 is formed on the substrate 6. Crystal growth is performed (FIG. 5).

Next, the graphite boat 1 is rotated counterclockwise as viewed from the A'side, and then A'is lowered. As a result, the first melt 9 on the wafer 6 moves to the waste melt reservoir 7, and the second melt 8 moves from the second melt reservoir 4 to the third melt reservoir 5 (FIG. 6).

Thereafter, by repeating the steps of FIGS. 2 to 6 described above, the second semiconductor layer is grown on the first semiconductor layer on the wafer 6 by the second melt 8. That is,
After the melt temperature was set to the optimum value again in the state shown in FIG. 6, the graphite boat 1 was kept horizontal in the AA ′ direction,
Rotate clockwise as seen from the A'side. This makes the second
The melt 8 moves in the third melt reservoir 5 (FIG. 7).

Then, with the graphite boat 1 kept rotating at the same speed, an inclination is given to A so as to lower A '. As a result, the second melt 8 becomes the third melt reservoir 5
From above to the semiconductor wafer 6 (FIG. 8).

Next, the graphite boat 1 is returned to the horizontal position, and the melt temperature is lowered while the second melt 8 and the wafer 6 are in contact with each other to grow crystals of the second semiconductor layer (FIG. 9).

Next, the graphite boat 1 is rotated counterclockwise as viewed from the A'side, and then A'is lowered. As a result, the second melt 8 on the wafer 6 moves to the melt waste liquid reservoir 7 and the growth ends (FIG. 10).

As described above, in the present embodiment, a groove for fixing the growth substrate 6 at a predetermined position of the graphite boat arranged in the sealed tube container, and a crystal growth on one side of the substrate fixing groove for crystal growth. Three grooves for accumulating the melt, a groove for accumulating the melt waste liquid on the other side of the substrate fixing groove, and a groove for connecting these grooves to each other are provided. The first and second melts having different combinations and ratios of the elements constituting the crystal from each other are put into two of them, and the tilt and rotation of the sealed tube container are operated by the melt moving mechanism. Since it is configured to be moved in the sealed tube container and sequentially contacted with the substrate 6, two growth layers having different crystal compositions can be formed on the substrate.

Further, since the sealed tube method is used in this embodiment, it is possible to grow a good quality and homogeneous crystal even when the semiconductor material contains a substance having a high vapor pressure.
Further, when this embodiment is applied to a Cd _X Hg _1-X Te compound semiconductor, CdTe is used as the substrate 6, and
As melt 9 of Hg: Cd: Te = 0.8: 0.02
The melt of 2: 2.54 was used, the melt of Hg: Cd: Te = 0.6: 0.022: 2.54 was used as the second melt 8, and the growth temperature was about 480 ° C. By doing so, it is possible to form a CdHgTe layer of x = 0.3 composition on the CdHgTe epitaxial layer of Cd composition of x = 0.2. 10 epitaxial layers with x = 0.2
It has a function of detecting light in the μm band, and the second layer of x = 0.3 functions as an optical window. Further, the mercury vapor pressure in the sealed tube during growth is 4 to 5 atmospheres, which is a condition that cannot be realized by the open tube method.

Next, a second embodiment of the present invention will be described with reference to the drawings. FIG. 11 shows the shape of a graphite boat used in a semiconductor manufacturing apparatus according to a second embodiment of the present invention, that is, a semiconductor epitaxial growth apparatus using a liquid-phase growth method for a sealed tube. ) Is a perspective view.
In these figures, 10 is a graphite boat enclosed in a sealed tube container, and 10 ′ is a first groove portion provided in the graphite boat 10. 6 is a semiconductor wafer fixed to the first groove portion 10 'on the graphite boat 10,
Reference numerals 11 and 12 denote the first groove portion 1 on the graphite boat 10.
2nd functioning as a melt reservoir provided on both sides of 0 '
In the groove portion, 11 is a first melt reservoir and 12 is a second melt reservoir. Reference numeral 13 is a third groove portion for connecting the second groove portions 11 and 12 and the first groove portion 10 '.

The second groove portions constituting the first and second melt reservoirs 11 and 12 are divided into two parts by chevron partitions, and the melt reservoirs 11 and 12 by a melt moving mechanism (not shown). It has a structure that allows smooth movement of the melt placed in. Further, the groove portion 13 is also provided with a similar chevron structure so as to prevent backflow of the melt contained in the melt reservoirs 11 and 12.

FIGS. 12 to 22 show a liquid phase growth method using the graphite boat 10 shown in FIG. 11 in the order of each step. In each drawing, (a) shows the posture of the graphite boat 10 on the long side. Direction (AA 'line direction in the figure)
3B is a view of the graphite boat 10 as viewed from the A ′ side, and FIG. 3C is a top view of the graphite boat 10. FIG. In these figures, the same symbols as in FIG. 11 indicate the same parts, 19 is the first melt, 18 is the second melt in which the combination of the elements constituting the crystal and the composition ratio are different from the first melt 19. Is.

The process flow will be described below. First, the inclination of the graphite boat 1 in the AA ′ line direction and the rotation angle around the AA ′ line viewed from the A ′ side are set to 0 °,
First in the first melt reservoir 11 of the graphite boat 10.
Second melt 1 and second melt 1 in the second melt reservoir 12
8, and the semiconductor wafer 6 is set at a predetermined position (FIG. 12). In this state, the graphite boat 10 is placed in a glass sealed tube, and these are put together in a furnace and heated to a high temperature. At this time, the sealed tube is filled with saturated vapor of semiconductor gas.

Next, when the graphite boat 10 is rotated counterclockwise around the line AA 'as viewed from the A'side and A is lowered with respect to A', the second melt 18 moves onto the substrate 6 (FIG. 13). ).

Next, the graphite boat 10 is returned horizontally and the second melt 18 and the substrate 6 are brought into contact with each other. In this state, by lowering the melt temperature, the wafer 6
Crystal growth of the first-layer semiconductor film is performed thereon (FIG. 14).

Next, the graphite boat 10 is rotated counterclockwise around the line AA 'as viewed from A', and then A'is lowered with respect to A, whereby the second melt 18 is retained in the second melt reservoir 12. Return to (Fig. 15). In this state, the melt temperature is returned to the optimum value.

Next, AA 'of the graphite boat 10
When each direction is kept horizontal and rotated clockwise around AA 'as viewed from A', each melt moves in each melt reservoir (Fig. 16).

By further lowering A'with respect to A in this state, the second melt 19 moves onto the substrate 6 (FIG. 17).

Next, the graphite boat 10 is returned horizontally, and a second crystal layer is grown on the wafer 6 (FIG. 1).
8).

After the growth is completed, the graphite boat 10 is rotated clockwise around the line AA 'as viewed from A', and A '
By lowering A, the first melt 19 becomes
Return to the melt reservoir 11 (FIG. 19).

Then, after the boat 10 is leveled (see FIG. 2).
0), when it is rotated counterclockwise around the line AA 'when viewed from A', each melt moves in each melt reservoir (Fig. 2).
1) When this is returned horizontally (FIG. 22), the state shown in FIG. 12 is obtained.

In this embodiment as described above, the first groove portion for setting the substrate 6 at a predetermined position of the graphite boat 10 arranged in the sealed tube container is crystal-grown on both sides of the first groove portion. Second groove portions for accumulating a melt for each of them are provided, these are connected by a third groove portion, and the first and second elements have different combinations and ratios of elements constituting crystals in the second groove portions.
The second melt was introduced, and the first and second melts were sequentially moved into the first groove through the third groove by tilting and rotating the sealed tube container to sequentially contact the substrate. Therefore, two growth layers having different crystal compositions can be formed on the substrate.

Furthermore, since the sealed tube method is used in this embodiment, a good quality and homogeneous crystal can be grown even when the semiconductor material contains a substance having a high vapor pressure.

Further, in this embodiment, by repeating the steps shown in FIGS. 12 to 22, it is possible to grow any number of epitaxial films having a multilayer structure. Further, when each cycle is similarly performed, a multilayer film structure having a periodic structure in the film thickness direction, that is, a superlattice structure can be formed.

FIG. 23 shows the shape of a graphite boat used in a semiconductor manufacturing apparatus according to the third embodiment of the present invention, that is, a semiconductor epitaxial growth apparatus using the liquid phase growth method of a sealed tube. Top view, (b) is a perspective view. In the figure, 20 is a graphite boat, 2
Reference numeral 0'denotes a first groove provided on the graphite boat 20. 6 is the first groove 2 of the graphite boat 20.
A semiconductor wafer fixed at 0 ', 11 and 12 are second wafers provided on both sides of the first groove portion 20' for accumulating a melt.
11 is a first melt reservoir, 12 is a second melt reservoir, 13 is a third groove for connecting the first groove and the second groove, and 21 is provided on the graphite boat 20. It is a steam source.

In the present embodiment, the graphite boat of the second embodiment described above is further provided with a vapor generation source 21 for generating a saturated vapor pressure in the sealed tube. The process flow is the same as in the case of the second embodiment, and therefore its explanation is omitted.

In the semiconductor manufacturing apparatus of this embodiment, since the vapor generating source 21 is further provided, in addition to the effect of the second embodiment, an element having a high vapor pressure such as mercury as a melt is added. When using the one containing, it is possible to prevent the element having a high vapor pressure from evaporating from the melt and changing the melt composition from the state before raising the temperature,
It is possible to suppress the fluctuation of the composition of the growing crystal.

Although the semiconductor manufacturing apparatus of the second embodiment is provided with the vapor generating source 21 in the above embodiment, it goes without saying that the semiconductor manufacturing apparatus of the first embodiment is provided with the vapor generating source. However, the same effect can be obtained in this case as well.

In the above-described embodiment, the number of melts may be increased to three or more by increasing the number of melt reservoirs.

Further, in the above-mentioned examples, by combining the elements constituting the crystal and by using the melts having different composition ratios, the film having different compositions is formed in multiple layers. Melts having the same constituent element ratio but different concentration of impurities that determine the conductivity type and different types may be used. In that case,
For example, a P / N junction can be formed.

[0053]

As described above, according to the present invention, the first groove portion for fixing the substrate to the boat sealed in the sealed tube,
Two or more second groove portions for accumulating the melt and a third groove portion for connecting these groove portions are provided, and melts having different crystal compositions and impurity concentrations are put in the respective second groove portions,
Since the boat is rotated or tilted by the melt moving mechanism so that the melt is sequentially moved onto the substrate for crystal growth, a semiconductor film having a multilayer structure can be easily formed on the substrate. is there. Further, since the present invention uses the sealed tube method, there is an effect that a high-quality and homogeneous crystal multilayer film can be obtained even when a semiconductor material contains a substance having a high vapor pressure.

Further, a second groove portion for accumulating the melt is provided on both sides of the first groove portion for fixing the substrate, and melts having different crystal compositions or impurity concentrations put in the second groove portions are melted by a melt moving mechanism. In the case where crystals are grown by alternately moving them on the substrate, it is possible to grow any number of layers of the semiconductor film having a multilayer structure, and when the cycle of moving the melt onto the substrate is similarly performed, There is an effect that a multilayer film structure having a periodic structure in the film thickness direction can be formed.

In addition, in the case where the vapor generating source is further provided in the sealed tube, in addition to the above-mentioned effect, there is an effect that the fluctuation of the composition of the growing crystal is suppressed and a good quality semiconductor film can be formed.

[Brief description of drawings]

FIG. 1 is a diagram showing the structure of a semiconductor manufacturing apparatus according to a first embodiment of the present invention.

FIG. 2 is a diagram showing a liquid phase growth process by the semiconductor manufacturing apparatus according to the first embodiment of the present invention.

FIG. 3 is a diagram showing a liquid phase growth process by the semiconductor manufacturing apparatus according to the first embodiment of the present invention.

FIG. 4 is a diagram showing a liquid phase growth process by the semiconductor manufacturing apparatus according to the first embodiment of the present invention.

FIG. 5 is a diagram showing a liquid phase growth process by the semiconductor manufacturing apparatus according to the first embodiment of the present invention.

FIG. 6 is a view showing a liquid phase growth process by the semiconductor manufacturing apparatus according to the first embodiment of the present invention.

FIG. 7 is a diagram showing a liquid phase growth process by the semiconductor manufacturing apparatus according to the first embodiment of the present invention.

FIG. 8 is a diagram showing a liquid phase growth process by the semiconductor manufacturing apparatus according to the first embodiment of the present invention.

FIG. 9 is a diagram showing a liquid phase growth process by the semiconductor manufacturing apparatus according to the first embodiment of the present invention.

FIG. 10 is a diagram showing a liquid phase growth process by the semiconductor manufacturing apparatus according to the first embodiment of the present invention.

FIG. 11 is a diagram showing a semiconductor manufacturing apparatus according to a second embodiment of the present invention.

FIG. 12 is a view showing a liquid phase growth process by the semiconductor manufacturing apparatus according to the second embodiment of the present invention.

FIG. 13 is a view showing a liquid phase growth process by the semiconductor manufacturing apparatus according to the second embodiment of the present invention.

FIG. 14 is a view showing a liquid phase growth process by the semiconductor manufacturing apparatus according to the second embodiment of the present invention.

FIG. 15 is a diagram showing a liquid phase growth process by the semiconductor manufacturing apparatus according to the second embodiment of the present invention.

FIG. 16 is a view showing a liquid phase growth process by the semiconductor manufacturing apparatus according to the second embodiment of the present invention.

FIG. 17 is a diagram showing a liquid phase growth process by the semiconductor manufacturing apparatus according to the second embodiment of the present invention.

FIG. 18 is a view showing a liquid phase growth process by the semiconductor manufacturing apparatus according to the second embodiment of the present invention.

FIG. 19 is a diagram showing a liquid phase growth process by the semiconductor manufacturing apparatus according to the second embodiment of the present invention.

FIG. 20 is a diagram showing a liquid phase growth process by the semiconductor manufacturing apparatus according to the second embodiment of the present invention.

FIG. 21 is a diagram showing a liquid phase growth process by the semiconductor manufacturing apparatus according to the second embodiment of the present invention.

FIG. 22 is a view showing a liquid phase growth process by the semiconductor manufacturing apparatus according to the second embodiment of the present invention.

FIG. 23 is a diagram showing a semiconductor manufacturing apparatus according to a third embodiment of the present invention.

FIG. 24 is a diagram showing the steps of a conventional liquid phase growth method for a sealed tube.

FIG. 25 is a diagram showing the steps of a conventional open tube liquid phase growth method.

[Explanation of symbols]

 1 Graphite Boat According to First Embodiment of the Present Invention 2 First Melt Reservoir 3 Grooves Connecting Melt Reservoir 4 Second Melt Reservoir 5 Third Melt Reservoir 6 Semiconductor Wafer (Substrate) 7 Melt Waste Liquid Reservoir 8 Second Melt 9 First Melt 10 Graphite Boat According to Second Embodiment of the Invention 11 First Melt Reservoir 12 Second Melt Reservoir 13 Grooves Connecting Melt Reservoir 18 Second Melt 19 First Melt 20 Graphite boat according to the third embodiment 21 Steam source

Claims (5)

[Claims] 1. A semiconductor manufacturing apparatus for crystal-growing a semiconductor film on a substrate in a sealed tube container, comprising: a first groove portion for fixing the substrate; and two grooves for accumulating a melt for crystal growth. A boat having the above-mentioned second groove portion and a third groove portion for connecting the first and second groove portions, a sealed tube container in which the boat is sealed, and an inclination to the boat, A semiconductor manufacturing apparatus comprising: a melt moving mechanism that moves the melt in the first to third grooves, and the crystals are grown by sequentially bringing the melt into contact with the substrate. 2. The second groove portion is arranged only in one of the first groove portions, and the other of the first groove portions has a fourth groove portion for accumulating a melt after crystal growth, and The melt moving mechanism has a fifth groove portion for connecting the fourth groove portion and the first groove portion, and the melt moving mechanism stores the melt accumulated in the second groove portion on the side close to the first groove portion. Move from the liquid to the substrate in sequence,
2. The semiconductor manufacturing apparatus according to claim 1, wherein after crystal growth, this is moved to the fourth groove through the fifth groove. 3. The second groove portion is arranged on both sides of the first groove portion, and the melt moving mechanism prevents movement of the melt accumulated in the second groove portion onto the substrate. The semiconductor manufacturing apparatus according to claim 1, wherein the semiconductor manufacturing apparatus is alternately performed from both sides. 4. A multilayer film having a periodic structure in the film thickness direction, wherein the melt moving mechanism causes the melt stored in the second groove to move onto the substrate alternately from both sides of the substrate. The semiconductor manufacturing apparatus according to claim 3, wherein the semiconductor manufacturing apparatus comprises: 5. The semiconductor manufacturing apparatus according to claim 1, wherein the boat is provided with a vapor generation source for applying a saturated vapor pressure in the sealed tube container.