JPH0496809A - Voltage switching constant current source - Google Patents

Voltage switching constant current source

Info

Publication number
JPH0496809A
JPH0496809A JP21535290A JP21535290A JPH0496809A JP H0496809 A JPH0496809 A JP H0496809A JP 21535290 A JP21535290 A JP 21535290A JP 21535290 A JP21535290 A JP 21535290A JP H0496809 A JPH0496809 A JP H0496809A
Authority
JP
Japan
Prior art keywords
voltage
npn transistor
constant current
collector
current source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21535290A
Other languages
Japanese (ja)
Inventor
Yutaka Osato
大里 豊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP21535290A priority Critical patent/JPH0496809A/en
Publication of JPH0496809A publication Critical patent/JPH0496809A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To narrow the transition area of switching and to easily set an operation threshold voltage by forming a voltage switching constant current source circuit which is operated when a supply voltage is higher than a prescribed voltage. CONSTITUTION:The base voltage of a first npn transistor TR Q1 is determined by voltages VBE1 and VBE2 between respective bases and emitters of first and second npn TRs Q1 and Q2 (VBE1=VBE2=VBE), and thereby, current supply from the collector of the TR Q1 is started when a supply voltage VCC is equal to or higher than n.V2+VBE, and the collector current of the TR Q1 is fixed when the supply voltage is higher than n.V2+2VBE. Thus, the transition area is narrowed to VBE( 0.7v) and the operation threshold voltage is easily set.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は半導体集積回路に於て利用される電源電圧が規
定電圧以上になった時、動作する電圧スイッチング定電
流源に関するものである。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a voltage switching constant current source that operates when a power supply voltage used in a semiconductor integrated circuit exceeds a specified voltage.

(X¥の枝番を丁 従来の電圧スイッチング定電流源を第2図に示す。(Choose the branch number of A conventional voltage switching constant current source is shown in FIG.

この回路構成は、一端が電源端子]に接続された抵抗R
1の4@端古接地端了2の間に[1個のン丁、ナーダイ
オート(Dl、D2.・・・・・・、Do)を縦列接続
し、ツェナークイオードD。のカソードにn p n 
hランシスタQ1のベースを接続し、トランジスタQ1
のエミッタに一端が接地端子2に接続された抵抗R2の
他端を接続し、)・ランンスタQ1のコレクタに電流供
給端子3を接続したものである。
This circuit configuration consists of a resistor R whose one end is connected to the power supply terminal.
Between the 4 terminals and the 2 terminals of 1 and 2, connect one diode diode (Dl, D2..., Do) in cascade, and form a Zener diode D. n p n at the cathode of
h Connect the base of transistor Q1 and connect transistor Q1
The other end of a resistor R2 whose one end is connected to the ground terminal 2 is connected to the emitter of ), and the current supply terminal 3 is connected to the collector of the run star Q1.

発明が解決しよろと−4る:118 しかし、従来の回路構成では各ツェナーダイオードの電
圧を〜・”Z 、 n 1)n トランジスタQ1のヘ
ース・エミッタ間電圧を\゛B2とずれば電源室rLが
(n−1)・vz+〜’B[以−1−てn p n h
ランシスタQ1のコレクタより電流を供給し始め、r〕
・〜”2以上でnpn トランジスタQ1のコレクタ電
流は定電流となる。これにより、遷移領域はvzVBE
 (’=5.8−0.7=5.1 v)と広くなる。ま
た遷移領域でのトランジスタQ1のコレクタ電流を■ヨ
  トランジスタQ1のコレクタ定電流をIO,npn
)ランジスタQ1の電流増幅率(hFE)をhFEl、
電源電圧をvccとするととなり、動作しきい値電圧の
設定が難しかった。
118 However, in the conventional circuit configuration, the voltage of each Zener diode is ~. rL is (n-1)・vz+〜'B [therefore-1-then n p n h
Start supplying current from the collector of Lancistor Q1, r]
・~”2 or more, the collector current of the npn transistor Q1 becomes a constant current.Thereby, the transition region becomes vzVBE
('=5.8-0.7=5.1 v). Also, the collector current of transistor Q1 in the transition region is IO, npn
) The current amplification factor (hFE) of transistor Q1 is hFEl,
Assuming that the power supply voltage is vcc, it is difficult to set the operating threshold voltage.

課題を解決するための手段 本発明は電源端子と第1のnpn トランジスタのベー
ス間に1個の抵抗とn個のツェナーダイオードを直列に
接続し、前記第1のnpn トランジスタのベースにエ
ミッタが接地された第2のnpnトランジスタのコレク
タを接続し、前記第1のnpnトランジスタのエミッタ
に前記第2のnpnトランジスタのベースと一端が接地
された第2の抵抗の他端子を接続し、前記第1のnpn
 トランジスタのコレクタに電流供給端子を接続したも
のである。
Means for Solving the Problems The present invention connects one resistor and n Zener diodes in series between a power supply terminal and the base of a first NPN transistor, and connects an emitter to the base of the first NPN transistor. The collector of the second npn transistor is connected to the emitter of the first npn transistor, and the other terminal of a second resistor whose one end is grounded is connected to the base of the second npn transistor. npn of
A current supply terminal is connected to the collector of the transistor.

作用 第1のnpn トランジスタのベース電圧を第1と第2
のnpn トランジスタのそれぞれのベース・エミッタ
間電圧VBEIとV BF2(ただし〜’BEl−VB
E2=VBEとする)で決定することにより電源電圧V
ccがn−Vz + VBH以上で第1のnpnトラン
ジスタのコレクタより電流を供給し始め、n・vZ+2
VBp以上で第1のnpn トランジスタのコレクタ電
流は定電流となる。これにより遷移領域をVBE (ζ
0.7v)と狭くすることができる。
The base voltage of the first npn transistor is
The base-emitter voltages VBEI and VBF2 of each npn transistor (where ~'BEl-VB
E2=VBE), the power supply voltage V
When cc is equal to or higher than n-Vz + VBH, current starts to be supplied from the collector of the first npn transistor, and n・vZ+2
Above VBp, the collector current of the first npn transistor becomes a constant current. This makes the transition region VBE (ζ
0.7v).

実施例 第1図は本発明の電圧スイッチング定電流源の実施例を
示す回路図である。
Embodiment FIG. 1 is a circuit diagram showing an embodiment of the voltage switching constant current source of the present invention.

この回路は、電源端子1とnpn トランジスタQ1の
ベースとの間に、抵抗R1とn個のツェナーダイオード
DI  、 D2 、・・・・・・、Doを直列接続し
、npn トランジスタQ1のベースと接続端子2の間
にnpn トランジスタQ2を接続し、npn トラン
ジスタQ1のエミッタをnpn トランジスタQ2の/
\−スと一端が接地端子2に接続された抵抗R2の他端
に接続し、npn トランジスタQ1のコレクタを電流
供給端子3に接続した構成である。。
In this circuit, a resistor R1 and n Zener diodes DI, D2, . . . , Do are connected in series between power supply terminal 1 and the base of an npn transistor Q1. An npn transistor Q2 is connected between terminals 2, and the emitter of the npn transistor Q1 is connected to the emitter of the npn transistor Q2.
The configuration is such that the terminal is connected to the other end of a resistor R2 whose one end is connected to the ground terminal 2, and the collector of the npn transistor Q1 is connected to the current supply terminal 3. .

ツェナーダイオードの電圧をvz、npnトランジスタ
Q1とQ2のベース・エミッタ間電圧をVBEIとVB
E2(ただしVBEI ” VBE2−VBEとする)
、npnhランシスタQ1とQ2のhFEをh FEI
 、 h FE:、遷移領域でのnpn トランジスタ
Q1のコレクタ電流を1.、npnトランジスタQ1の
コレクタ定電流領域での電流を1゜、電源電圧をVCC
とすると n 6VZ+VBEl<VCC<n 1VZ +VBE
l+VBE2の遷移領域で でi)す、スイッチングの遷移領域は〜BE(# 0 
、7 v Iと狭く、動作しきい値電圧の設定が容易と
なる。
The voltage of the Zener diode is vz, and the voltage between the base and emitter of npn transistors Q1 and Q2 is VBEI and VB.
E2 (however, VBEI "VBE2-VBE")
, hFEI of npnh run transistors Q1 and Q2
, h FE:, the collector current of the npn transistor Q1 in the transition region is set to 1. , the current in the collector constant current region of the npn transistor Q1 is 1°, and the power supply voltage is VCC.
Then n 6VZ + VBEl<VCC<n 1VZ +VBE
In the transition region of l+VBE2 i), the switching transition region is ~BE(# 0
, 7 v I, making it easy to set the operating threshold voltage.

発明の効果 本発明によれば、遷移領域の狭い電圧スイッチング定電
流源が容易に実現でき、動作しきい値電圧の設定を容易
にすることができる。
Effects of the Invention According to the present invention, a voltage switching constant current source with a narrow transition region can be easily realized, and the operating threshold voltage can be easily set.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の電圧スイッチング定電流源の実施例を
示す回路図、第2図は従来例の回路図である。 l・・・・・電#、端子、2・・・・・・接地端子、3
・・・・・電流供給端子、D1〜D n・・・ツェナー
ダイオード、Q 1 、 Q2−−・・n p n ト
ランジスタ、R1,R2・・・抵抗。 代理人の氏名 弁理士 粟野重孝 はか1名Vcc> 
n−Vz+ VBEI +VBE2の定電流領域で! 
・ 3・ D1〜Dn Ot、(h Rt、R2 電漁籍子 $I蛇j島手 電流供綿嬶ヰ 1ツエナーダイオード npn l−ランシスタ 担抗
FIG. 1 is a circuit diagram showing an embodiment of the voltage switching constant current source of the present invention, and FIG. 2 is a circuit diagram of a conventional example. l...Electrical number, terminal, 2...Ground terminal, 3
...Current supply terminal, D1-Dn...Zener diode, Q1, Q2--...npn transistor, R1, R2...resistance. Name of agent: Patent attorney Shigetaka Awano, 1 person Vcc>
In the constant current region of n-Vz+ VBEI +VBE2!
・ 3. D1~Dn Ot, (h Rt, R2 electric fishing register $I snake j Shimate current supply cotton 1 Zener diode npn l-lansistor support

Claims (1)

【特許請求の範囲】[Claims] 一端が電源端子に接続された第1の抵抗の他端と第1の
npnトランジスタのベース間に、n個のツェナーダイ
オードを縦列接続し、前記第1のnpnトランジスタの
ベースにエミッタが接地された第2のnpnトランジス
タのコレクタを接続し、前記第1のnpnトランジスタ
のエミッタに前記第2のnpnトランジスタのベースと
一端が接地された第2の抵抗の他端を接続し、前記第1
のnpnトランジスタのコレクタに電流供給端子を接続
したことを特徴とする電圧スイッチング定電流源。
n Zener diodes are connected in series between the other end of a first resistor whose one end is connected to the power supply terminal and the base of the first npn transistor, and their emitters are grounded to the base of the first npn transistor. The collector of the second npn transistor is connected to the emitter of the first npn transistor, the other end of the second resistor whose one end is grounded is connected to the base of the second npn transistor, and the other end of the second resistor is connected to the emitter of the first npn transistor.
A voltage switching constant current source characterized in that a current supply terminal is connected to the collector of an npn transistor.
JP21535290A 1990-08-14 1990-08-14 Voltage switching constant current source Pending JPH0496809A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21535290A JPH0496809A (en) 1990-08-14 1990-08-14 Voltage switching constant current source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21535290A JPH0496809A (en) 1990-08-14 1990-08-14 Voltage switching constant current source

Publications (1)

Publication Number Publication Date
JPH0496809A true JPH0496809A (en) 1992-03-30

Family

ID=16670878

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21535290A Pending JPH0496809A (en) 1990-08-14 1990-08-14 Voltage switching constant current source

Country Status (1)

Country Link
JP (1) JPH0496809A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100756093B1 (en) * 2000-03-13 2007-09-05 피시아 밥콕 엔비론멘트 게엠베하 Fluid-cooled central beam elements for the multi-rail combustion stoker and central beam

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100756093B1 (en) * 2000-03-13 2007-09-05 피시아 밥콕 엔비론멘트 게엠베하 Fluid-cooled central beam elements for the multi-rail combustion stoker and central beam

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