JPH048851B2 - - Google Patents
Info
- Publication number
- JPH048851B2 JPH048851B2 JP21998083A JP21998083A JPH048851B2 JP H048851 B2 JPH048851 B2 JP H048851B2 JP 21998083 A JP21998083 A JP 21998083A JP 21998083 A JP21998083 A JP 21998083A JP H048851 B2 JPH048851 B2 JP H048851B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- magnetic shield
- head
- electrode
- magnetoresistive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005291 magnetic effect Effects 0.000 claims description 63
- 230000000694 effects Effects 0.000 claims description 5
- 230000005294 ferromagnetic effect Effects 0.000 claims description 5
- 239000000696 magnetic material Substances 0.000 claims description 5
- 230000035699 permeability Effects 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 3
- 239000010408 film Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229910000889 permalloy Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000009828 non-uniform distribution Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
Description
【発明の詳細な説明】
本発明は磁気記憶媒体に書き込まれた磁気的情
報を、いわゆる磁気抵抗効果を利用して読み出し
を行う強磁性磁気抵抗効果素子（以下、MR素子
と称す）を備えた磁気抵抗効果ヘツド（以下、
MRヘツドと称す）に関する。[Detailed Description of the Invention] The present invention includes a ferromagnetic magnetoresistive element (hereinafter referred to as an MR element) that reads magnetic information written on a magnetic storage medium using a so-called magnetoresistive effect. magnetoresistive head (hereinafter referred to as
(referred to as MR head).
MRヘツドは、磁気記録における記録密度の向
上に大きく貢献する再生専用磁気ヘツドとして注
目されている。 MR heads are attracting attention as read-only magnetic heads that greatly contribute to improving recording density in magnetic recording.
一般に、高記録密度を達成するためには、磁気
記憶媒体上のトラツク走行方向の線密度の向上及
びトラツク密度の向上が必要となつている。従つ
て、これ等の磁気的に記録された情報を電気的な
信号に変換するMRヘツドは、トラツク走行方向
の分解能及びトラツク幅方向の分解能の向上が要
求される。 Generally, in order to achieve high recording density, it is necessary to improve the linear density in the track running direction on a magnetic storage medium and to improve the track density. Therefore, MR heads that convert magnetically recorded information into electrical signals are required to have improved resolution in the track running direction and in the track width direction.
上記、トラツク走行方向の高分解能特性を得る
ために、MR素子の上層及び下層に絶縁膜を介し
て、高透磁率磁性体からなる磁気シールド層を設
ける方法が用いられている。この種の磁気シール
ド層を設けたMRヘツドは、上層及び下層の磁気
シールド間距離即ち、ジヤツプ長を短くする程、
より高分解能特性が得られることから、上層及び
下層の磁気シールド間の絶縁膜は極力薄くされ
る。 In order to obtain the above-mentioned high-resolution characteristics in the track running direction, a method is used in which magnetic shield layers made of a high magnetic permeability magnetic material are provided on the upper and lower layers of the MR element with insulating films interposed therebetween. In an MR head equipped with this type of magnetic shield layer, the shorter the distance between the upper and lower magnetic shields, that is, the jump length,
Since higher resolution characteristics can be obtained, the insulating film between the upper and lower magnetic shields is made as thin as possible.
又、MR素子を用いて再生用磁気ヘツドを作製
する場合は、基板上にMRヘツドを作製後、目的
の大きさに基板を切断し、次に磁気記憶媒体（磁
気テープ、磁気デイスク等）に対面する浮場面を
目的の寸法まで研摩する。 In addition, when manufacturing a magnetic head for reproduction using an MR element, after manufacturing the MR head on a substrate, cut the substrate to the desired size, and then attach it to a magnetic storage medium (magnetic tape, magnetic disk, etc.). Polish the opposing floating surfaces to the desired dimensions.
しかし、前述した如く、MRヘツドの上層及び
下層の磁気シールド間の絶縁膜は高分解能特性を
達成するために出来る限り薄くしてあり、上記研
摩時にMR素子の電極（一般に、Au、Cu等の固
有抵抗の低い材料即ち、延性の大きい材料で形成
される）がだれ、磁気シールドと部分的に接触す
る危険があつた。この様な現象は磁気テープにお
いては、テープの走行中のヘツドとの摩擦、磁気
デイスクにおいてはコンタクト、スタート、スト
ツプ時のヘツドとの摩擦によつても発生する。上
記MR素子の電極と磁気シールドとの接触が生ず
れば、MR素子に供給するセンス電流が磁気シー
ルドにも分流するためMR素子の出力値が変動
し、不安定なものとなる。 However, as mentioned above, the insulating film between the upper and lower magnetic shields of the MR head is made as thin as possible in order to achieve high resolution characteristics, and during the polishing process, the MR element's electrode (generally made of Au, Cu, etc.) There was a risk that the material (made of a material with low resistivity, i.e., a highly ductile material) would sag and come into partial contact with the magnetic shield. Such a phenomenon occurs in a magnetic tape due to friction with the head while the tape is running, and in a magnetic disk due to friction with the head during contact, start, and stop. If contact occurs between the electrodes of the MR element and the magnetic shield, the sense current supplied to the MR element will also be shunted to the magnetic shield, causing the output value of the MR element to fluctuate and become unstable.
前記、従来の問題を解決するため、第１図に示
す様な電極構造を有するMRヘツドが開示されて
いる。第１図はMR素子４と電極９の位置関係を
示す平面図で、簡単のため磁気シールドは省略し
ている。第１図におけるMRヘツドはヘツド面を
目的寸法まで研摩する際、及び、磁気記憶媒体と
の摩擦の際に、電極９が直接、ヘツド面に露出し
ない構成となつているため、磁気シールドとの接
触を避けることができる。しかし、第１図の構成
では電極９を通じて供給されるセンス電流が、
MR素子の両端、即ち電極９の近傍で不均一な分
布を示し、この領域ではMR素子４の出力が低下
する恐れがあつた。特に、高トラツク密度に対応
するためトラツク幅Ｌを小さくすれば、センス電
流の分布は更に不均一になり、出力の低下は大き
くなるという問題があつた。 In order to solve the above-mentioned conventional problems, an MR head having an electrode structure as shown in FIG. 1 has been disclosed. FIG. 1 is a plan view showing the positional relationship between the MR element 4 and the electrodes 9, and the magnetic shield is omitted for simplicity. The MR head shown in Fig. 1 is constructed so that the electrode 9 is not directly exposed to the head surface when the head surface is polished to the target size or when it comes into contact with the magnetic storage medium, so that it is not directly exposed to the magnetic shield. Contact can be avoided. However, in the configuration of FIG. 1, the sense current supplied through the electrode 9 is
A non-uniform distribution was exhibited at both ends of the MR element, that is, in the vicinity of the electrode 9, and there was a possibility that the output of the MR element 4 would decrease in this region. In particular, if the track width L is made smaller in order to accommodate high track density, the distribution of the sense current becomes even more uneven, resulting in a problem that the output decreases significantly.
更に、MRヘツドの電極と磁気シールドの接触
は、前述した浮場面に露出した部分のみならず、
MRヘツドの内部でも生ずる。即ち、高分解能特
性を達成するため、上層及び下層の磁気シールド
間の絶縁膜の厚みを、MR素子の電極の厚みより
薄く形成された場合は、絶縁膜の電極部分におけ
るステツプカバレージが悪化し、この部分を通じ
て電極と磁気シールドの接触が生ずる。これ等の
現象は、MRヘツドの製作歩留を大きく低下させ
ていた。 Furthermore, the contact between the electrode of the MR head and the magnetic shield is not limited to the part exposed to the floating surface mentioned above.
It also occurs inside the MR head. That is, in order to achieve high resolution characteristics, if the thickness of the insulating film between the upper and lower magnetic shields is formed to be thinner than the electrode thickness of the MR element, the step coverage at the electrode portion of the insulating film will deteriorate; Contact between the electrode and the magnetic shield occurs through this portion. These phenomena have greatly reduced the manufacturing yield of MR heads.
本発明の目的は前記従来の電極の欠点を解決し
た磁気抵抗効果ヘツドを提供することである。 SUMMARY OF THE INVENTION An object of the present invention is to provide a magnetoresistive head that overcomes the drawbacks of the conventional electrodes.
本発明は、強磁性薄膜より成る磁気抵抗効果素
子が所定の厚みを有する絶縁層を介して、高透磁
率磁性体から成る二つの磁気シールドによつては
さまれてなる磁気抵抗効果ヘツドにおいて、前記
磁気抵抗効果素子にセンス電流を供給するための
電極が前記磁気シールドで構成されていることを
特徴とする。 The present invention provides a magnetoresistive head in which a magnetoresistive element made of a ferromagnetic thin film is sandwiched between two magnetic shields made of a high permeability magnetic material via an insulating layer having a predetermined thickness. It is characterized in that an electrode for supplying a sense current to the magnetoresistive element is constituted by the magnetic shield.
以下、本発明の実施例を図面を用いて、詳細に
説明する。 Embodiments of the present invention will be described in detail below with reference to the drawings.
第２図は本発明に係わるMRヘツドの一実施例
を示す概略斜視図である。 FIG. 2 is a schematic perspective view showing an embodiment of the MR head according to the present invention.
第２図において、MRヘツドのスライダとなる
べく基体１上にパーマロイ等の高透磁率磁性体で
かつ電気的導体である下層の磁気シールド２が形
成され、前記下層磁気シールド２の一部を露出し
て、SiO2、Al2O3等の絶縁層３が形成されてい
る。次いで、下層磁気シールド２の露出された領
域と接触する様に強磁性体からなる幅ＷのMR素
子（例えば、Fe−Ni合金、Ni−Co合金）４が薄
膜短冊状に形成されている。即ち、下層磁気シー
ルド２の露出された領域とMR素子４の接触〜領
域ＡはMR素子４の一つの電極を構成する。更
に、MR素子４及び下層磁気シールド２を被う様
にSiO2、Al2O3等の絶縁層５が形成され、絶縁層
５の一部は、接触領域ＡとＬだけ離れた位置に、
MR素子４を露出させるために穴が形成されてい
る。次いで、絶縁層５の上にパーマロイ等の高透
磁率磁性体でかつ電気的導体である上層の磁気シ
ールド６が形成され、前記上層磁気シールドの一
部は絶縁層５の穴を通してMR素子４と接触して
いる。即ち、上層磁気シールド６とMR素子４の
接触領域Ｂは、MR素子４の他の電極を構成して
いる。又、下層磁気シールド２及び上層磁気シー
ルド８の一部は、電気端子７及び８が接続されて
おり、これ等の電気端子７及び８並びに下層磁気
シールド２及び上層磁気シールド８を経由して、
MR素子４にセンス電流を供給される。 In FIG. 2, a lower magnetic shield 2 made of a highly permeable magnetic material such as permalloy and an electrical conductor is formed on a base 1 to serve as a slider of an MR head, and a portion of the lower magnetic shield 2 is exposed. Then, an insulating layer 3 made of SiO 2 , Al 2 O 3 or the like is formed. Next, an MR element (for example, Fe--Ni alloy, Ni--Co alloy) 4 made of a ferromagnetic material and having a width of W is formed in the shape of a thin film strip so as to be in contact with the exposed region of the lower magnetic shield 2. That is, the exposed area of the lower magnetic shield 2 and the contact area A of the MR element 4 constitute one electrode of the MR element 4. Furthermore, an insulating layer 5 made of SiO 2 , Al 2 O 3 or the like is formed to cover the MR element 4 and the lower magnetic shield 2, and a portion of the insulating layer 5 is located at a distance of contact areas A and L.
A hole is formed to expose the MR element 4. Next, an upper magnetic shield 6 made of a high permeability magnetic material such as permalloy and an electrical conductor is formed on the insulating layer 5, and a part of the upper magnetic shield 6 is connected to the MR element 4 through the hole in the insulating layer 5. are in contact. That is, the contact area B between the upper magnetic shield 6 and the MR element 4 constitutes another electrode of the MR element 4. Further, electric terminals 7 and 8 are connected to a part of the lower magnetic shield 2 and the upper magnetic shield 8, and via these electric terminals 7 and 8, the lower magnetic shield 2, and the upper magnetic shield 8,
A sense current is supplied to the MR element 4.
上記説明において、下層磁気シールド２及び上
層磁気シールド８の電気抵抗はMR素子４の外部
から信号磁界を検出する領域（即ち、トラツク
幅）Ｌの電気抵抗の1/10以下に設定するのが望ま
しい。この様に上層磁気シールド２及び上層磁気
シールド８の電気抵抗を小さくすることにより、
上層及び下層磁気シールド８及び２の強磁性磁気
抵抗効果による信号検出を小さくすることができ
る。これは、上層下層磁気シールド２及び８の膜
厚をMR素子４の膜厚より充分大きく設定するか
面積を大きくすることにより、更に、磁気シール
ドを磁気抵抗効果の極めて小さい材料で構成する
ことにより容易に実現できる。特に、前述の、上
層及び下層磁気シールド２及び８の膜厚及び面積
を大きくすることは、MR素子４に不要な磁界が
印加されない様にする。磁気シールド本来の目的
からも極めて有効である。又、上層及び下層磁気
シールド２及び８の強磁性磁気抵抗効果を及び電
気抵抗を小さくするために、磁気シールド層の少
なくとも一部分に電気的良導体（例えば、Cu、
Au、Al等）を被着しても良い。 In the above description, the electrical resistance of the lower magnetic shield 2 and the upper magnetic shield 8 is desirably set to 1/10 or less of the electrical resistance of the area (i.e., track width) L where the signal magnetic field is detected from outside the MR element 4. . By reducing the electrical resistance of the upper magnetic shield 2 and the upper magnetic shield 8 in this way,
Signal detection due to the ferromagnetic magnetoresistive effect of the upper and lower magnetic shields 8 and 2 can be reduced. This can be achieved by setting the film thickness of the upper and lower magnetic shields 2 and 8 to be sufficiently larger than the film thickness of the MR element 4, or by increasing the area thereof, and by constructing the magnetic shield from a material with an extremely small magnetoresistive effect. It can be easily achieved. In particular, increasing the thickness and area of the upper and lower magnetic shields 2 and 8 described above prevents unnecessary magnetic fields from being applied to the MR element 4. It is extremely effective from the original purpose of magnetic shielding. In addition, in order to reduce the ferromagnetic magnetoresistive effect and electrical resistance of the upper and lower magnetic shields 2 and 8, at least a portion of the magnetic shield layer is coated with a good electrical conductor (for example, Cu,
Au, Al, etc.) may be coated.
以上、述べた様に、本発明では、磁気シールド
層がMR素子の電極を構成し、磁気シールドと
MR素子との間にAu、Cu等の延性の大きい材料
が含まれていないため、MRヘツドを目的の寸法
まで研摩する際及び磁気記憶媒体との摩擦の際に
又は、絶縁層のステツプカバレージの劣化による
MR素子と磁気シールドの接触が避けられるた
め、MRヘツドの出力変動が解消され、又、製作
歩留りも大きく向上される。更に、磁気シールド
とMR素子間絶縁層を極めて薄く形成でき高分解
能特性を有するMRヘツドを提供できる。 As described above, in the present invention, the magnetic shield layer constitutes the electrode of the MR element, and the magnetic shield layer constitutes the electrode of the MR element.
Since highly ductile materials such as Au and Cu are not included between the MR element and the MR element, it is difficult to polish the MR head to the desired dimensions, when there is friction with the magnetic storage medium, or when the step coverage of the insulating layer is due to deterioration
Since contact between the MR element and the magnetic shield is avoided, fluctuations in the output of the MR head are eliminated, and manufacturing yields are also greatly improved. Furthermore, the magnetic shield and the insulating layer between the MR elements can be formed extremely thin, and an MR head with high resolution characteristics can be provided.
更に、本発明では、MR素子の電極を構成する
上層及び下層磁気シールドとMR素子との接触領
域Ａ及びＢをMR素子の幅Ｗ全面に形成できるた
め、MR素子のトラツク幅Ｌが及び幅Ｗで均一な
分布を示すセンス電流を供給できる。従つて、高
トラツク密度に適したMRヘツドを提供できる。 Furthermore, in the present invention, since the contact areas A and B between the upper and lower magnetic shields constituting the electrodes of the MR element and the MR element can be formed over the entire width W of the MR element, the track width L of the MR element can be It is possible to supply a sense current with a uniform distribution. Therefore, an MR head suitable for high track density can be provided.
第１図は従来の磁気抵抗効果ヘツドを示す平面
図、第２図は本発明の実施例を示す概略斜視図で
ある。
１……基体、２……下層磁気シールド、４……
MR素子、６……上層磁気シールド。
FIG. 1 is a plan view showing a conventional magnetoresistive head, and FIG. 2 is a schematic perspective view showing an embodiment of the present invention. 1...Base body, 2...Lower magnetic shield, 4...
MR element, 6... upper layer magnetic shield.
Claims (1)
の厚みを有する絶縁層を介して、高透磁率磁性体
から成る二つの磁気シールドによつてはさまれて
なる磁気抵抗効果ヘツドにおいて、前記磁気抵抗
効果素子にセンス電流を供給するための電極が前
記磁気シールドで構成されていることを特徴とす
る磁気抵抗効果ヘツド。1. In a magnetoresistive head in which a magnetoresistive element made of a ferromagnetic thin film is sandwiched between two magnetic shields made of a high permeability magnetic material via an insulating layer having a predetermined thickness, A magnetoresistive head characterized in that an electrode for supplying a sense current to an effect element is constituted by the magnetic shield.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21998083A JPS60113313A (en) | 1983-11-22 | 1983-11-22 | Magneto-resistance effect head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21998083A JPS60113313A (en) | 1983-11-22 | 1983-11-22 | Magneto-resistance effect head |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60113313A JPS60113313A (en) | 1985-06-19 |
| JPH048851B2 true JPH048851B2 (en) | 1992-02-18 |
Family
ID=16744035
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21998083A Granted JPS60113313A (en) | 1983-11-22 | 1983-11-22 | Magneto-resistance effect head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60113313A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11175920A (en) | 1997-12-05 | 1999-07-02 | Nec Corp | Magneto-resistance effect type combined head and its manufacture |
| JP2000276716A (en) | 1999-03-24 | 2000-10-06 | Nec Corp | Magnetoresistance effect type head, its manufacture and magnetic storage device |
-
1983
- 1983-11-22 JP JP21998083A patent/JPS60113313A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60113313A (en) | 1985-06-19 |
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