JPH04834B2 - - Google Patents
Info
- Publication number
- JPH04834B2 JPH04834B2 JP60228820A JP22882085A JPH04834B2 JP H04834 B2 JPH04834 B2 JP H04834B2 JP 60228820 A JP60228820 A JP 60228820A JP 22882085 A JP22882085 A JP 22882085A JP H04834 B2 JPH04834 B2 JP H04834B2
- Authority
- JP
- Japan
- Prior art keywords
- protective film
- wear
- resistance
- thermal
- resistant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000001681 protective effect Effects 0.000 claims description 17
- 239000000470 constituent Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- -1 B 4 C Inorganic materials 0.000 description 1
- 208000025599 Heat Stress disease Diseases 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 238000003487 electrochemical reaction Methods 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 125000001475 halogen functional group Chemical group 0.000 description 1
- 238000005338 heat storage Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Electronic Switches (AREA)
- Non-Adjustable Resistors (AREA)
Description
【発明の詳細な説明】
〔技術分野〕
本発明はサーマルヘツド用耐摩耗性保護膜に関
する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a wear-resistant protective film for a thermal head.
サーマルヘツドはコンピユータ、ワードプロセ
ツサ、フアクシミル等の印字ヘツドとして広く用
いられている。サーマルヘツドはポリシリコン等
の抵抗発熱体のドツドを多数配列し、それらを選
択的に通電することにより印字リボンを用紙に熱
転写して印字するように構成したものである。用
紙はサーマルヘツドの面に摺接しながら移送され
るから、耐摩耗性が高い保護膜により抵抗発熱体
の表面を保護する必要がある。
Thermal heads are widely used as printing heads in computers, word processors, facsimile machines, and the like. A thermal head is constructed by arranging a large number of dots of resistive heating elements such as polysilicon, and selectively energizing them to thermally transfer a printing ribbon onto paper to print. Since the paper is transferred while sliding against the surface of the thermal head, it is necessary to protect the surface of the resistance heating element with a protective film having high wear resistance.
サーマルヘツドにおけるスポツト状印字要素は
第１図に示されているように、下から順にアルミ
ナ等の基板１、蓄熱用のグレーズガラス２、ポリ
シリコン等の発熱体層３電極４，５及び耐摩耗保
護膜６より成る。図の７は発熱部となる。 As shown in Fig. 1, the spot-shaped printing elements in the thermal head are made up of, in order from the bottom, a substrate 1 made of alumina or the like, a glaze glass 2 for heat storage, a heating layer 3 made of polysilicon, etc., electrodes 4, 5, and abrasion resistant. It consists of a protective film 6. 7 in the figure is a heat generating part.
保護膜６には一般に硬度が高く、熱によるクラ
ツクが発生せず、摩耗し難く、しかも湿気やアル
カリ等に対して安定なことが要求され、従来種々
の材料が研究されている。 The protective film 6 is generally required to have high hardness, not to crack due to heat, to be resistant to wear, and to be stable against moisture, alkalis, etc., and various materials have been researched in the past.
従来使用されている耐摩耗性保護膜には
Ta2O5、SiC、Al2O3、B4C、SiOxNy等が知られ
ている。しかし、これらの保護膜には一長一短が
あつて未だ充分に満足でない。Ta2O5はピツカー
ス硬度がやや低く（600〜800Kg／mm2）、耐摩耗性
に問題があり、また抵抗発熱体を酸化する傾向が
あるのでSiO2層を耐摩耗保護膜の下に介在する
必要があり、低温で再結晶化し易く応力変化によ
るクラツクが発生し易い欠点があり、さらに抵抗
発熱体の下地であるアルミナ基板及びグレーズ層
より熱膨脹係数がかなり小さく熱パルスの印加で
クラツクを生じ易い。一方、SiCの電気抵抗が低
く、電気化学的な反応により耐摩耗性が低下する
ので、SiO2等の膜を下層として形成する必要が
あり、またクラツクが発生し易い。またAl2O3、
B4C等は内部応力が大きくクラツクが発生し易
い。さらに、SiOxNyは熱膨脹係数が下地よりも
かなり小さく、熱パルスの印加によりクラツクを
生じる問題がある。従つて、耐摩耗性が高いだけ
でなく耐クラツク性、耐熱疲労性にすぐれた保護
膜が要請されている。 Conventionally used wear-resistant protective films include
Known examples include Ta 2 O 5 , SiC, Al 2 O 3 , B 4 C, and SiO x N y . However, these protective films have both advantages and disadvantages and are still not fully satisfactory. Ta 2 O 5 has a rather low Pickers hardness (600 to 800 Kg/mm 2 ), has problems with wear resistance, and tends to oxidize the resistance heating element, so a SiO 2 layer is interposed under the wear-resistant protective film. It has the disadvantage that it easily recrystallizes at low temperatures and easily generates cracks due to stress changes.Furthermore, it has a much smaller coefficient of thermal expansion than the alumina substrate and glaze layer that are the base of the resistance heating element, and cracks occur when heat pulses are applied. easy. On the other hand, since SiC has low electrical resistance and wear resistance is reduced due to electrochemical reactions, it is necessary to form a film of SiO 2 or the like as an underlying layer, and cracks are likely to occur. Also Al 2 O 3 ,
B 4 C etc. have large internal stress and are prone to cracks. Furthermore, SiO x N y has a coefficient of thermal expansion that is considerably smaller than that of the underlying material, and there is a problem in that it can cause cracks when a heat pulse is applied. Therefore, there is a need for a protective film that not only has high wear resistance but also excellent crack resistance and thermal fatigue resistance.
本発明の目的は、耐クラツク性が高く、耐熱疲
労性にすぐれたサーマルヘツド用耐熱摩耗性保護
膜を提供することである。
An object of the present invention is to provide a heat-wear-resistant protective film for a thermal head that has high crack resistance and excellent heat fatigue resistance.
本発明のサーマルヘツド用耐摩耗性保護膜は、
Si、La、Ｏ、Ｎを主成分とすることを特徴とす
る。より具体的には本発明の保護膜はSiLaxNy
Nz（ただしｘ＝0.1〜4.0、ｙ＝0.2〜6.0及びｚ＝1.2
〜3.0）なる化学式で表わされる。
The wear-resistant protective film for thermal heads of the present invention is
It is characterized by containing Si, La, O, and N as main components. More specifically, the protective film of the present invention is SiLa x N y
N z (where x=0.1~4.0, y=0.2~6.0 and z=1.2
~3.0) is represented by the chemical formula.
本発明の耐摩耗性保護膜はTa2O5よりも高い硬
度、及び低い摩耗性を有し、熱膨脹係数がアルミ
ナ基板とほぼ同等であるため、耐クラツク性が高
い。 The wear-resistant protective film of the present invention has higher hardness and lower wear resistance than Ta 2 O 5 , and has a coefficient of thermal expansion almost equal to that of the alumina substrate, so it has high crack resistance.
本発明のサーマルヘツド用耐熱性保護膜は、Si
−La−Ｏ−Ｎ系の物質であり、好ましくはSiLax
NyNzで表わされる物質から構成される。ここに
ｘ＝0.1〜4.0、ｙ＝0.2〜6.0、及びｚ＝1.2〜3.0で
ある。Laは熱膨脹を調整する働きがあるが、少
な過ぎると十分な調整が行われず、下地との線熱
膨脹係数が小さ過ぎ、一方多過ぎると膜が柔かく
なり耐摩耗性が減じる。Ｏ及びＮは大体同様な効
果を有し、これらが少な過ぎると膜が柔かくなり
耐摩耗性が減じ、一方多過ぎると多孔となり脆く
なる。従つて、上記のｘ、ｙ、ｚで示される範囲
の組成を用いることが望ましい。
The heat-resistant protective film for thermal heads of the present invention is composed of Si
-La-O-N based substance, preferably SiLa x
It is composed of a substance represented by N y N z . Here, x=0.1-4.0, y=0.2-6.0, and z=1.2-3.0. La has the function of adjusting thermal expansion, but if it is too little, the adjustment will not be sufficient and the coefficient of linear thermal expansion with the substrate will be too small, while if it is too much, the film will become soft and its abrasion resistance will decrease. O and N have roughly similar effects; too little of these makes the film soft and reduces wear resistance, while too much makes it porous and brittle. Therefore, it is desirable to use a composition within the range indicated by x, y, and z above.
本発明の保護膜は例えばスパツタ法を用いて成
膜することができる。この場合には、成膜原料と
してSiO2、La2O3、Si3N4等を用い、これらを所
定の混合比で混合し、プレスしてターゲツトと
し、また雰囲気ガスとしてArガス、及び必要な
らさらにO2、N2ガスを用い、RF電力を加えてタ
ーゲツトをArスパツタし、下地例えばアルミナ
基板上にガラスグレーズ層を設けたものの上にSi
−La−Ｏ−Ｎ系の保護膜を成膜する。 The protective film of the present invention can be formed using, for example, a sputtering method. In this case, SiO 2 , La 2 O 3 , Si 3 N 4 , etc. are used as film forming raw materials, mixed at a predetermined mixing ratio and pressed to form a target, and Ar gas and necessary Then, use O 2 and N 2 gas and apply RF power to Ar sputter the target, and then sputter Si on the base, for example, an alumina substrate with a glass glaze layer.
-A La-O-N-based protective film is formed.
SiO2、La2O3、Si3N4の粉末をモル比５：３：
１の割合で混合し、プレスしてターゲツトとし、
投入電力1.5KW、Ar圧3Pa、基板温度350℃で
RFスパツタして4.5μｍの厚さに成膜して耐摩耗
性層とした。Arガスに適宜O2、N2を混入して反
応性スパツタをし、組成の調整をした。
SiO 2 , La 2 O 3 , Si 3 N 4 powders in a molar ratio of 5:3:
Mix in a ratio of 1 part, press to target,
Input power 1.5KW, Ar pressure 3Pa, substrate temperature 350℃
A wear-resistant layer was formed by RF sputtering to form a film with a thickness of 4.5 μm. The composition was adjusted by mixing O 2 and N 2 into Ar gas and performing reactive sputtering.
得られたSiLaxNyNz膜に対して種々の試験及
び測定を行つた。ｘ＝0.1〜4.0、ｙ＝0.2〜6.0及
びｚ＝1.2〜3.0のものは次の特性を示した。 Various tests and measurements were performed on the obtained SiLa x N y N z film. Those with x=0.1-4.0, y=0.2-6.0 and z=1.2-3.0 showed the following characteristics.
１ ピツカース硬度は1200〜1600Kg／mm2であり
Ta2O5よりも硬い。1 The Pickers hardness is 1200-1600Kg/ mm2.
Harder than Ta2O5 .
２ 表面の引掻き強度は440ｇであり、Ta2O5の
270ｇより強い。なお、この引掻き強度はダイ
ヤモンド針を用いた引掻き試験機（新東科学(株)
製HEIDON−14型）によつて測定した。2 The scratch strength of the surface is 440 g, which is the same as that of Ta 2 O 5 .
Stronger than 270g. This scratch strength was measured using a scratch tester using a diamond needle (Shinto Kagaku Co., Ltd.).
Measured using a HEIDON-14 model (manufactured by Manufacturer).
３ 球径12mmの鋼球にダイヤモンドペーストを付
着させた耐摩耗試験では27秒であり、Ta2O7の
７秒より長い。3. In a wear test using diamond paste attached to a steel ball with a diameter of 12 mm, the test time was 27 seconds, which is longer than 7 seconds for Ta 2 O 7 .
４ 熱パルスを加えても電子線回折でハローが見
られず、再結晶が生じていない。4 Even when a heat pulse is applied, no halo is seen in electron diffraction, and no recrystallization has occurred.
５ 強酸、強アルカリに対して安定である。5 Stable against strong acids and strong alkalis.
６ 比抵抗は1011Ωcm以上であり、電気的に安定
である。6. Specific resistance is 10 11 Ωcm or more and electrically stable.
７ 線熱膨脹係数が7.2×10-6であり、アルミ基
板の7.5×10-6及びグレーズの6.8×10-6と近い
ため、熱疲労によるクラツクが生じない。7. The coefficient of linear thermal expansion is 7.2×10 -6 , which is close to 7.5×10 -6 for the aluminum substrate and 6.8×10 -6 for the glaze, so cracks due to thermal fatigue do not occur.
上の実施例から明らかなように、本発明のサー
マルヘツド用耐保護膜は、硬度が高く、引掻き強
度も高く、再結晶化によるクラツクが発生し難
く、耐酸・耐アルカリ性にすぐれ、絶縁性も良
く、また熱疲労によるクラツクの発生も少ないと
いうすぐれた作用効果を有するものである。
As is clear from the above examples, the protective film for thermal heads of the present invention has high hardness, high scratch strength, is resistant to cracks due to recrystallization, has excellent acid and alkali resistance, and has excellent insulation properties. It also has excellent effects in that it reduces the occurrence of cracks due to thermal fatigue.
第１図はサーマルヘツドの基本構造を示す断面
図である。
FIG. 1 is a sectional view showing the basic structure of a thermal head.
Claims (1)
サーマルヘツド用耐摩耗性保護膜。 ２ SiLaxOyNz（ただしｘ＝0.1〜4.0、ｙ＝0.2〜
6.0及びｚ＝1.2〜3.0）で表わされる組成を有する
前記第１項記載の耐摩耗性保護膜。[Claims] 1. A wear-resistant protective film for a thermal head whose main constituent elements are Si, La, O, and N. 2 SiLa x O y N z (where x=0.1~4.0, y=0.2~
6.0 and z=1.2 to 3.0).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60228820A JPS6290259A (en) | 1985-10-16 | 1985-10-16 | Antiwear protective film for thermal head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60228820A JPS6290259A (en) | 1985-10-16 | 1985-10-16 | Antiwear protective film for thermal head |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6290259A JPS6290259A (en) | 1987-04-24 |
| JPH04834B2 true JPH04834B2 (en) | 1992-01-08 |
Family
ID=16882371
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60228820A Granted JPS6290259A (en) | 1985-10-16 | 1985-10-16 | Antiwear protective film for thermal head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6290259A (en) |
-
1985
- 1985-10-16 JP JP60228820A patent/JPS6290259A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6290259A (en) | 1987-04-24 |
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