JPH0481013A - Saw resonator - Google Patents
Saw resonatorInfo
- Publication number
- JPH0481013A JPH0481013A JP19273190A JP19273190A JPH0481013A JP H0481013 A JPH0481013 A JP H0481013A JP 19273190 A JP19273190 A JP 19273190A JP 19273190 A JP19273190 A JP 19273190A JP H0481013 A JPH0481013 A JP H0481013A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- saw
- pattern
- face
- resonator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002184 metal Substances 0.000 claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 230000005284 excitation Effects 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 abstract description 8
- 230000000694 effects Effects 0.000 abstract description 3
- 238000010897 surface acoustic wave method Methods 0.000 abstract description 3
- 229910052737 gold Inorganic materials 0.000 abstract description 2
- 230000000644 propagated effect Effects 0.000 abstract description 2
- 229910052709 silver Inorganic materials 0.000 abstract description 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、SAW波(弾性表面波)を用いたSAW共振
子に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a SAW resonator using SAW waves (surface acoustic waves).
従来のSAW共振子は、第2図(a)(b)に示すごと
くである。第2図(a)は外観図であり、第2図(b)
はSAW共振片を示す、21は気密ケース、22はSA
W共振片、23は気密端子のベース、24はリード端子
、25はマウント部材、26はワイヤーボンディング線
である。SAW共振共振片線2密端子のベース23の上
面にマウント部材25で固定され、気密ケース21で密
閉され、内部は真空もしくは窒素ガスで置換されている
。リード端子24の上部の平坦部はワイヤーボンディン
グ線26でSAW共振共振片線2ンディング端子29に
接続されている。A conventional SAW resonator is as shown in FIGS. 2(a) and 2(b). Figure 2(a) is an external view, and Figure 2(b)
indicates the SAW resonator piece, 21 is the airtight case, 22 is the SA
23 is a base of an airtight terminal, 24 is a lead terminal, 25 is a mounting member, and 26 is a wire bonding line. It is fixed to the upper surface of the base 23 of the SAW resonant resonant two-wire terminal with a mounting member 25, and is sealed with an airtight case 21, and the inside is replaced with a vacuum or nitrogen gas. The upper flat portion of the lead terminal 24 is connected to a SAW resonant single wire 2 binding terminal 29 via a wire bonding line 26 .
第2図(Jl)内sのsAW共振1t、第2rM(b)
に示すごとく、板厚400〜500μm程度の圧電基板
20の片面にAu、Ag、AI等の金属によって構成さ
れた厚さ1000〜10000人程度の励振電極2度合
反射電極28、及びボンディング端子29をエツチング
、あるいはリフトオフで形成し、裏面をヘース23に接
着していた励振電極が励振するSAW波は反射電極で反
射され、励振電極に戻る。Figure 2 (Jl) sAW resonance 1t, 2nd rM (b)
As shown in the figure, an excitation electrode 28 with a thickness of about 1,000 to 10,000 and a bonding terminal 29 made of metal such as Au, Ag, or AI are formed on one side of a piezoelectric substrate 20 with a thickness of about 400 to 500 μm. The SAW wave excited by the excitation electrode formed by etching or lift-off and whose back surface is bonded to the heath 23 is reflected by the reflective electrode and returns to the excitation electrode.
しかし前述の従来技術においては、励振IE極が励振す
る5AWI以外のバルク波の振動が裏面で反射され、表
面の励振電極で目的の周波数以外の不要共振を生じたり
、SAW波と干渉して周波数のジャンプを生じたりして
、精度が悪くなることは避けられなかった。また、励振
電極及び反射電極等の金属膜の応力により基板が反るた
め、圧電基板の板厚を400μm程度にして反りを抑え
ていた1本発明はかかる従来の問題点を解決し、不要共
振を抑えて高精度化し、かつ小型化したSAW共振子を
lj場に提供することにある。However, in the above-mentioned conventional technology, vibrations of bulk waves other than 5AWI excited by the excitation IE pole are reflected on the back surface, causing unnecessary resonance at frequencies other than the intended frequency at the excitation electrode on the front surface, or interfering with the SAW waves and causing frequency It was inevitable that the accuracy would deteriorate due to jumps. In addition, since the substrate warps due to the stress of the metal films such as the excitation electrode and the reflective electrode, the thickness of the piezoelectric substrate is made approximately 400 μm to suppress the warping.The present invention solves such conventional problems and eliminates unnecessary resonance. The object of the present invention is to provide a SAW resonator for the lj field, which is highly accurate by suppressing the noise and is miniaturized.
本発明のSAW共振子は、SAW共振共振長いて、ID
T[極からなる2端子の電極2、反射電極3を形成する
面と対向する面に、金属膜のパターンを有していること
を特徴とする。The SAW resonator of the present invention has a long SAW resonance and an ID
It is characterized by having a metal film pattern on the surface opposite to the surface on which the two-terminal electrode 2 consisting of a pole and the reflective electrode 3 are formed.
第1図は本発明の実施例におけるSAW共振子の平面図
であって、第1図(a)は表子面図、第1図(b)は裏
手面図である。図中の各部位を順を追って説明すると、
まず第1図(a)中の各部位の名称は、1は電圧基板、
2は励振電極、2の左右両側に位置する3は反射電極で
あり、4はマウント部の電極である0周知のようにSA
W共振共振長合には、共振子として使用される弾性波は
SAW波(弾性表面波)であり、前記SAW波は弾性体
表面に局在して伝播する波であり、その波のエネルギー
はほぼ1波長程度の深さに存在している。従ってSAW
共振子として通常使用される周波数帯である1 00M
Hz〜IGHzにおいては、通常使用されるL i T
aosまたは水晶の場合、波長λ=30μm程度とな
りSAW共振共振長電基板1の板厚はλの3倍、100
μm程度あれば十分である。励振電極2は通称IDT電
極と呼ばれており、前述のSAW波を励振するのに用い
られる。また、反射電極3の役割は2の励振電極で励振
されてSAW共振共振長平方向の両側へ伝播する波(第
1図(a)の6)をAu、Ag1A1等の金属によりス
トリップ状の電極アレイを形成した結果発生する周期的
摂動効果で、反射して励振電極側へ戻すことにある。4
は気密端子のリード端子部位へのマウント部の電極であ
る。FIG. 1 is a plan view of a SAW resonator according to an embodiment of the present invention, with FIG. 1(a) being a front view and FIG. 1(b) being a back view. To explain each part in the diagram step by step,
First, the names of each part in Fig. 1(a) are: 1 is the voltage board;
2 is an excitation electrode, 3 located on both left and right sides of 2 is a reflective electrode, and 4 is an electrode on the mount part.0As is well known, SA
In the W resonance resonance length match, the elastic wave used as a resonator is a SAW wave (surface acoustic wave), and the SAW wave is a wave that propagates locally on the surface of an elastic body, and the energy of the wave is It exists at a depth of approximately one wavelength. Therefore, SAW
100M, which is the frequency band usually used as a resonator.
In the range from Hz to IGHz, the commonly used L i T
In the case of AOS or crystal, the wavelength λ = approximately 30 μm, and the thickness of the SAW resonant long current substrate 1 is 3 times λ, 100 μm.
A thickness of approximately μm is sufficient. The excitation electrode 2 is commonly called an IDT electrode, and is used to excite the above-mentioned SAW wave. The role of the reflective electrode 3 is to conduct waves (6 in Figure 1 (a)) that are excited by the excitation electrode 2 and propagate to both sides of the SAW resonance longitudinal direction to a strip-shaped electrode array made of metal such as Au, Ag1A1, etc. The purpose is to reflect the periodic perturbation effect generated as a result of the formation and return it to the excitation electrode side. 4
is the electrode of the mounting part on the lead terminal part of the airtight terminal.
次に第1図(b)について説明する。5はバルク液吸収
電極であり、第1図(”a)の2の励振“電極で励振さ
れた深さ方向への波(バルク波)はこの電極の長平方向
のパターンで吸収され、裏面で反射されて表面へ到達さ
れることを勧ぐ、裏面のパターンが長平方向であるのは
、表面のパターンと同様に短手方向のパターンであると
、表面で発生したバルク波により裏面の電極が共振され
て新なバルク波が発生し、そ九が表面に伝撫されて表面
の励振電極が励振するSAW波と干渉するのを防ぐため
である。また、表面の金属膜の材質及び膜厚と電極パタ
ーンの範囲及び面積と、裏面の金属膜の材質及び膜厚と
電極パターンの範囲及び面積をほぼ等しくしておけば、
表面の金属膜の応力が裏面の金属膜の応力で相殺され、
基板の反りを防ぐ、なお、前述の電極2. 3. 4.
5は、厚さ1 000〜10000A程度の、 Au
、 Ag、 A1等の金IEI[で構成され、金属
膜を蒸着またはスパッタリングで形成した後、エツチン
グによる腐食加工によって電極パターンを形成するが、
あるいはりフトオフにより1先に電極パターンを形成し
た後、蒸着またはスパッタリングで金属膜を形成する。Next, FIG. 1(b) will be explained. Reference numeral 5 denotes a bulk liquid absorbing electrode, and the wave (bulk wave) in the depth direction excited by the excitation electrode 2 in Figure 1 (a) is absorbed by the pattern in the longitudinal direction of this electrode, and is absorbed by the back surface. The reason why the pattern on the back side is in the long plane direction is that it is recommended to be reflected and reach the surface.If the pattern on the back side is in the short direction like the pattern on the front side, the bulk wave generated on the front side will cause the electrode on the back side to This is to prevent the resonance from generating a new bulk wave, which is propagated to the surface and interferes with the SAW wave being excited by the excitation electrode on the surface. In addition, if the material and thickness of the metal film on the front surface and the range and area of the electrode pattern are approximately equal to the material and thickness of the metal film on the back surface and the range and area of the electrode pattern,
The stress in the metal film on the front side is offset by the stress in the metal film on the back side,
In addition, the above-mentioned electrode 2. prevents warping of the substrate. 3. 4.
5 is Au with a thickness of about 1000 to 10000A
, Ag, A1, etc., and after forming a metal film by vapor deposition or sputtering, an electrode pattern is formed by corrosion processing by etching.
Alternatively, an electrode pattern is first formed by lift-off, and then a metal film is formed by vapor deposition or sputtering.
〔発明の効果)
本発明によれば、共振子裏面にある金属膜のバ″ターン
がバルク波を吸収して反射をなくし、励振電極での不要
共振゛を抑えて高精度化し、基板の反りを抑えて小型化
したSAW共振子を市場に提供することができ、発信器
等の高精度化、゛ 小′型化に利点がある。[Effects of the Invention] According to the present invention, the pattern of the metal film on the back surface of the resonator absorbs bulk waves and eliminates reflection, suppresses unnecessary resonance at the excitation electrode, improves precision, and prevents warping of the substrate. It is possible to provide the market with a SAW resonator that is smaller and has a lower cost, and is advantageous in increasing the precision of oscillators and making them smaller.
第1図(a)、 (b)は本発明のSAW共振子のS
AW共振共振子面平面IA (a)と裏面平面図(b)
である、第2図(a)、 (b)は従来のSAW共振
子の実施例を示す外観図(a)とSAW共振共振子面図
(b)である。
l・・・圧電基板
2・・・励振電極
3・・・反射電極
4・・・マウント部
5・・・バルク波吸収電極
6・・・伝播波
21・・・気密ケース
22・・・SAW共振共
振子・・・気密端子
24・・・リード端子
25・・・マウント部材
26・・・ワイヤーボンディング線
27・・・励振電極
28・・・反射電極
29・・・ボンディング端子
以
上
出願人 セイコーエプソン株式会社
代理人 弁理士 鈴木 喜三部 化1名反別を板
2励振晃穣
マつニド抑
SAW長微月 1)仏鴇逍
第1図に)
SAW喪振り
第1図
(ム)
112図
(0,ン
第2図
(J)Figures 1(a) and 1(b) show the SAW resonator of the present invention.
AW resonance resonator surface plane IA (a) and back plan view (b)
FIGS. 2(a) and 2(b) are an external view (a) showing an example of a conventional SAW resonator and a plan view (b) of the SAW resonator. l...Piezoelectric substrate 2...Excitation electrode 3...Reflecting electrode 4...Mount section 5...Bulk wave absorbing electrode 6...Propagating wave 21...Airtight case 22...SAW resonance Resonator...Airtight terminal 24...Lead terminal 25...Mount member 26...Wire bonding line 27...Excitation electrode 28...Reflection electrode 29...Bonding terminal and above Applicant: Seiko Epson Corporation Company agent Patent attorney Kisanbe Suzuki 1st name Hanbetsu wo board 2 Excitement of Akihiro Matsu Nido SAW Chowegetsu 1) Buddha's death Figure 1) SAW Mourning Figure 1 (Mu) Figure 112 ( 0,n Figure 2 (J)
Claims (3)
子の励振電極と、SAW波を反射して波を閉じ込めるた
めの反射電極を形成する面と対向する面(裏面)に、金
属膜のパターンを有していることを特徴とするSAW共
振子。(1) In the SAW resonator piece, a metal film pattern is formed on the surface (back surface) opposite to the surface on which the two-terminal excitation electrode consisting of the IDT electrode and the reflective electrode for reflecting and confining the SAW wave are formed. A SAW resonator comprising:
ーンは長手方向のストライプパターンであることを特徴
とする請求項1記載のSAW共振子。(2) The SAW resonator according to claim 1, wherein the pattern of the metal film on the back surface of the SAW resonator piece is a stripe pattern in the longitudinal direction.
及び膜厚とパターンの範囲及び面積は、表面の金属膜の
材質及び膜厚とパターンの範囲及び面積とほぼ等しいこ
とを特徴とする請求項1記載のSAW共振子。(3) In the SAW resonator piece, the material and thickness of the metal film on the back surface and the range and area of the pattern are approximately equal to the material and thickness of the metal film on the front surface, and the range and area of the pattern. The SAW resonator according to item 1.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19273190A JPH0481013A (en) | 1990-07-20 | 1990-07-20 | Saw resonator |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19273190A JPH0481013A (en) | 1990-07-20 | 1990-07-20 | Saw resonator |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0481013A true JPH0481013A (en) | 1992-03-13 |
Family
ID=16296131
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19273190A Pending JPH0481013A (en) | 1990-07-20 | 1990-07-20 | Saw resonator |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0481013A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006086700A (en) * | 2004-09-15 | 2006-03-30 | Kyocera Corp | Surface acoustic wave device, manufacturing method therefor, and communication apparatus |
JP2010178198A (en) * | 2009-01-30 | 2010-08-12 | Epson Toyocom Corp | Surface acoustic wave element and piezoelectric device |
-
1990
- 1990-07-20 JP JP19273190A patent/JPH0481013A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006086700A (en) * | 2004-09-15 | 2006-03-30 | Kyocera Corp | Surface acoustic wave device, manufacturing method therefor, and communication apparatus |
JP2010178198A (en) * | 2009-01-30 | 2010-08-12 | Epson Toyocom Corp | Surface acoustic wave element and piezoelectric device |
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