JPH0479794B2 - - Google Patents
Info
- Publication number
- JPH0479794B2 JPH0479794B2 JP59161023A JP16102384A JPH0479794B2 JP H0479794 B2 JPH0479794 B2 JP H0479794B2 JP 59161023 A JP59161023 A JP 59161023A JP 16102384 A JP16102384 A JP 16102384A JP H0479794 B2 JPH0479794 B2 JP H0479794B2
- Authority
- JP
- Japan
- Prior art keywords
- blade
- wafers
- diamond
- cutting
- sliced
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005520 cutting process Methods 0.000 claims description 20
- 239000010432 diamond Substances 0.000 claims description 9
- 229910003460 diamond Inorganic materials 0.000 claims description 8
- 239000010953 base metal Substances 0.000 claims description 5
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 235000012431 wafers Nutrition 0.000 description 23
- 239000000463 material Substances 0.000 description 7
- 238000006073 displacement reaction Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D5/00—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting only by their periphery; Bushings or mountings therefor
- B24D5/12—Cut-off wheels
- B24D5/126—Cut-off wheels having an internal cutting edge
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Description
【発明の詳細な説明】
[産業上の利用分野]
IDブレードは第3図のように円環状の金属薄
板(コアメタル)1の内周2に沿つてダイヤモン
ド砥石層3を設けた工具で、半導体、ガラス、セ
ラミツクスなどの切断に利用される。本発明はシ
リコン(Si)などの半導体材料をスライスして薄
板(ウエハ)とする目的のダイヤモンドIDブレ
ードに関するものである。[Detailed Description of the Invention] [Industrial Application Field] The ID blade is a tool having a diamond grinding wheel layer 3 along the inner periphery 2 of an annular thin metal plate (core metal) 1 as shown in FIG. Used for cutting glass, ceramics, etc. The present invention relates to a diamond ID blade for slicing semiconductor materials such as silicon (Si) into thin plates (wafers).
[従来の技術]
IDブレードはその周縁で保持して太鼓の皮の
ように張り上げ、高速回転して切断を行う。緊張
状態で使用するためブレードは甚だ薄いにも拘ら
ずよく平坦を保つことが特長である。これにより
平坦で薄いウエハが得られ、この条件を保ちなが
ら切りしろを少なく、すなわち高価な材料の損失
が少ない。[Conventional technology] The ID blade is held at its periphery, stretched up like the skin of a drum, and rotated at high speed to perform cutting. Because the blade is used under tension, it is characterized by its ability to remain flat even though it is extremely thin. This results in a flat and thin wafer, and while maintaining this condition there is less margin for cutting, ie less loss of expensive material.
以上の原理にも拘らず現実にはスライスされた
ウエハは常に若干の反りを伴う。半導体デバイス
の製造工程はきわめて繊細で高精度のため、素材
のウエハは平坦であることが望ましく、反りは常
に問題となつていた。 Despite the above principle, in reality, sliced wafers are always accompanied by some warpage. Because the manufacturing process for semiconductor devices is extremely delicate and highly precise, it is desirable that the raw wafers be flat, and warping has always been a problem.
反り発生の要因は被切断材にも機械条件にも
種々あるが、最終的にはIDブレードの弯曲に帰
する。切断作用が働く最内周部においてブレード
板面に直角に(以後横方向と称す)変位すればブ
レードは弯曲し、被切断材に切込む切断溝も弯曲
する。以後は弯曲した溝がブレードを案内するの
で、切断面の弯曲が進行する。 There are various factors that cause warpage, including the material to be cut and the machine conditions, but ultimately it comes down to the curvature of the ID blade. If the blade is displaced perpendicularly to the blade plate surface (hereinafter referred to as lateral direction) at the innermost circumference where the cutting action occurs, the blade will be curved, and the cutting groove that cuts into the material to be cut will also be curved. Thereafter, the curved groove guides the blade, so the curvature of the cutting surface progresses.
IDブレードは張り上げた状態でよく平坦を保
つことは上述したが、これは横方向の外力に抗す
る能力があることを意味する。正確には横方向の
変位を復元する力が発生するのであつて、ブレー
ドを強く張れば復元力は強いのでブレードは常に
概ね平坦を保つ。しかし復元力は変位に依存しき
わめて微小の変位に対しては復元力も小さいの
で、横方向の力を受ければ微小の変位すなわちブ
レードの弯曲は避けられない。 As mentioned above, the ID blade remains well flat when tensioned, which means it has the ability to resist external lateral forces. To be more precise, a force is generated to restore the lateral displacement, and the stronger the tension on the blade, the stronger the restoring force, so the blade always remains generally flat. However, the restoring force depends on displacement, and the restoring force is small for extremely small displacements, so if a lateral force is applied, small displacements, that is, curvature of the blade, are unavoidable.
従来のブレードでは、ブレードの弯曲の方向が
一定せずその結果、スライスされたウエハの反り
の方向も不定であつた。 In conventional blades, the direction of the blade's curvature is not constant, and as a result, the direction of warpage of the sliced wafer is also not constant.
そこでスライスされたウエハの反りの方向が一
定にできれば、例えばウエハの表裏が識別できる
等ウエハの品質管理上非常に有益である。 Therefore, if the direction of warpage of a sliced wafer can be made constant, it is very useful for quality control of the wafer, for example, by being able to distinguish between the front and back sides of the wafer.
このようにIDブレードを使用して単結晶等を
スライスするとき、スライスされてウエハの弯曲
の方向及び弯曲度を一定にしようとする着想は特
開昭50−119381号公報に記載され公知であるが、
このものは砥粒層の刃先からの幅を一面と他面で
異にし、砥粒層の幅の広い側が狭い側より切断抵
抗が大きく、この切断抵抗の小さい側にブレード
が弯曲して一定方向に弯曲したウエハが得られる
ことをねらつておるが、ブレードの表裏で切断抵
抗が異なると、スライスされたウエハの欠陥数が
表裏において差ができる。又この方法で反り量を
制御することは極めてむづかしい。 The idea of making the direction and degree of curvature of the wafer constant when slicing a single crystal etc. using an ID blade is described in Japanese Patent Application Laid-Open No. 119381/1983 and is well known. but,
In this type, the width of the abrasive grain layer from the cutting edge is different on one side and the other side, and the cutting resistance is greater on the wider side of the abrasive layer than on the narrower side, and the blade is curved toward the side with smaller cutting resistance and curved in a certain direction. The aim is to obtain curved wafers, but if the cutting resistance differs between the front and back sides of the blade, the number of defects in the sliced wafers will differ between the front and back sides. Furthermore, it is extremely difficult to control the amount of warpage using this method.
[発明が解決しようとする課題]
本発明の課題はウエハの表裏に欠陥数の差が生
じることなく、スライスされたウエハの弯曲の方
向及び弯曲度が一定となるIDブレードを提供す
ることにある。[Problems to be Solved by the Invention] An object of the present invention is to provide an ID blade in which the direction and degree of curvature of sliced wafers are constant without causing a difference in the number of defects between the front and back sides of the wafer. .
[課題を解決するための手段]
第2図に示すように切断抵抗はダイヤモンド砥
石部3の刃先4に作用し、IDブレードを被切断
材に切込む方向すなわちブレード板面に平行の力
Fであるが、図示のように刃先4が傾斜していれ
ば横方向の分力F′が発生してブレード1を弯曲さ
せる。[Means for solving the problem] As shown in Fig. 2, cutting resistance acts on the cutting edge 4 of the diamond grinding wheel section 3, and is a force F in the direction in which the ID blade cuts into the material to be cut, that is, parallel to the blade plate surface. However, if the cutting edge 4 is inclined as shown in the figure, a lateral component force F' is generated, causing the blade 1 to curve.
本発明の手段は第1図に示すように円環状の台
金11の内周端面を全周にわたつて、ブレード板
面に対して一定角度傾斜させて傾斜内周端面12
を設け、かつ台金の内周部に沿つてダイヤモンド
を電着させ、前記傾斜内周端面12に沿つて傾斜
した刃先14をもつ砥石部13を形成したことに
ある。 As shown in FIG. 1, the means of the present invention is such that the inner circumferential end surface of the annular base metal 11 is inclined at a constant angle with respect to the blade plate surface over the entire circumference, and the inclined inner circumferential end surface 12 is
is provided, and diamond is electrodeposited along the inner circumferential portion of the base metal to form a grindstone portion 13 having a cutting edge 14 inclined along the inclined inner circumferential end surface 12.
[作 用]
本発明のIDブレードは刃先14は斜めである
刃は刃先先端が厚さ方向の中心面から片側(第1
図において下面)へずれており、そのことによつ
て前述の理由により切断抵抗の横方向分力F′がブ
レードを弯曲させるので、スライスされたウエハ
には素材インゴツトに関して一定方向の反りが出
現することは明らかである。[Function] In the ID blade of the present invention, the cutting edge 14 is oblique.
As a result, due to the above-mentioned reason, the lateral component of the cutting resistance F' causes the blade to curve, so that the sliced wafer exhibits a warp in a certain direction with respect to the material ingot. That is clear.
すなわち故意に反りを発生するのであるが、反
りが過大となつては不可であることはもちろんで
ある。実際には後記実施例のように反りを実用的
許容範囲内におさめることができる。このために
はコアメタル内周に加工する非対称の量を適切に
選ぶとともに、ブレードを強く張つて横方向の復
元力を強く確保できるよう、抗張力の高いコアメ
タル材料を採用することが望ましい。 In other words, warping is intentionally generated, but it goes without saying that it is impossible if the warping becomes excessive. In reality, the warpage can be kept within a practical allowable range as shown in the examples described later. To this end, it is desirable to appropriately select the amount of asymmetry to be processed on the inner periphery of the core metal, and to use a core metal material with high tensile strength so that the blade can be strongly tensioned to ensure a strong lateral restoring force.
本発明のIDブレードによりスライスされたウ
エハは反りの方向が一定するばかりでなく、反り
の量もまた比較的に揃うのは、刃先の非対称によ
る横方向分力F′が優先し前述の偶発的諸原因によ
る不定の横方向分力が抑制されるためと思われ
る。 Wafers sliced by the ID blade of the present invention not only have a constant warp direction, but also a relatively uniform amount of warp, because the lateral component force F' due to the asymmetry of the cutting edge takes precedence and is due to the aforementioned accidental force. This seems to be because the indefinite lateral component force due to various causes is suppressed.
[実施例]
圧延により硬化したステンレス鋼SUS−301の
厚さ0.13mmの薄板を打抜いた円環の内周端面を板
面法線方向に対して10゜傾けてコアメタルとして、
内周に沿つて従来と等しい方法で粒径40〜60μm
のダイヤモンドを電着し、呼称サイズ23.5インチ
のIDブレードを製作した。刃先の厚さは0.28mmで
ある。[Example] A thin plate of stainless steel SUS-301 hardened by rolling with a thickness of 0.13 mm was punched out, and the inner peripheral end face of the ring was tilted at 10 degrees with respect to the normal direction of the plate surface to form a core metal.
Grain size 40-60μm along the inner circumference in the same way as before
An ID blade with a nominal size of 23.5 inches was manufactured by electrodepositing diamonds. The thickness of the cutting edge is 0.28mm.
このIDブレードで直径4インチのシリコンイ
ンゴツトを、厚さ0.7mmのウエハにスライスした。
ウエハの全数に反りが認められたが、その方向は
一定しており、反りの量もほとんど全数が許容範
囲内であつた。 A silicon ingot with a diameter of 4 inches was sliced into wafers with a thickness of 0.7 mm using this ID blade.
Warpage was observed in all of the wafers, but the direction was constant, and the amount of warp was within the allowable range in almost all of the wafers.
[効 果]
本発明のIDブレードはスライスされたウエハ
の反りを防止することはできないが、反りの方向
が一定するので、素材インゴツトの成長方向を各
個のウエハについて識別できる利益がある。又前
記した従来例のようにブレードの表裏で切断抵抗
が異なつてスライスされたウエハの欠陥数が表裏
において差が生じることがないことから高品質の
ウエハが作成できる。[Effects] Although the ID blade of the present invention cannot prevent warpage of sliced wafers, since the direction of warpage is constant, there is an advantage that the growth direction of the material ingot can be identified for each wafer. Furthermore, since the number of defects in sliced wafers does not differ between the front and back sides of the sliced wafer due to the difference in cutting resistance between the front and back sides of the blade as in the conventional example, high-quality wafers can be produced.
第1図は本発明に係るダイヤモンドIDブレー
ドの一実施例を示す一部の断面図、第2図は本発
明の原理説明図、第3図は一般に用いられている
IDブレードの平面図である。
11……台金、12……傾斜内周端面、13…
…砥石部、14……刃先。
Fig. 1 is a partial sectional view showing an embodiment of a diamond ID blade according to the present invention, Fig. 2 is a diagram illustrating the principle of the invention, and Fig. 3 is a generally used diamond ID blade.
FIG. 3 is a plan view of the ID blade. 11... Base metal, 12... Inclined inner peripheral end surface, 13...
...Whetstone part, 14...Blade tip.
Claims (1)
レード板面に対して一定角度傾斜させて傾斜内周
端面を設け、かつ台金の内周部に沿つてダイヤモ
ンドを電着させ、前記傾斜内周端面に沿う傾斜し
た刃先をもつ砥石部を形成したダイヤモンドID
ブレード。1. The inner peripheral end surface of the annular base metal is tilted at a certain angle with respect to the blade plate surface over the entire circumference to provide an inclined inner peripheral end face, and diamond is electrodeposited along the inner peripheral part of the base metal, A diamond ID formed with a grindstone portion having an inclined cutting edge along the inclined inner circumferential end surface.
blade.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16102384A JPS6138871A (en) | 1984-07-31 | 1984-07-31 | Diamond id blade |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16102384A JPS6138871A (en) | 1984-07-31 | 1984-07-31 | Diamond id blade |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6138871A JPS6138871A (en) | 1986-02-24 |
JPH0479794B2 true JPH0479794B2 (en) | 1992-12-16 |
Family
ID=15727116
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16102384A Granted JPS6138871A (en) | 1984-07-31 | 1984-07-31 | Diamond id blade |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6138871A (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4913981U (en) * | 1972-05-08 | 1974-02-05 | ||
JPS50119381A (en) * | 1974-03-06 | 1975-09-18 | ||
JPS5223786B2 (en) * | 1974-03-11 | 1977-06-27 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5223786U (en) * | 1975-08-09 | 1977-02-19 |
-
1984
- 1984-07-31 JP JP16102384A patent/JPS6138871A/en active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4913981U (en) * | 1972-05-08 | 1974-02-05 | ||
JPS50119381A (en) * | 1974-03-06 | 1975-09-18 | ||
JPS5223786B2 (en) * | 1974-03-11 | 1977-06-27 |
Also Published As
Publication number | Publication date |
---|---|
JPS6138871A (en) | 1986-02-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |