JPH0479223A - Vapor cleaning device - Google Patents
Vapor cleaning deviceInfo
- Publication number
- JPH0479223A JPH0479223A JP19350590A JP19350590A JPH0479223A JP H0479223 A JPH0479223 A JP H0479223A JP 19350590 A JP19350590 A JP 19350590A JP 19350590 A JP19350590 A JP 19350590A JP H0479223 A JPH0479223 A JP H0479223A
- Authority
- JP
- Japan
- Prior art keywords
- cleaning
- vapor
- isopropyl alcohol
- steam
- tank
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 66
- 239000007788 liquid Substances 0.000 claims abstract description 35
- 238000013020 steam cleaning Methods 0.000 claims description 26
- 238000010438 heat treatment Methods 0.000 claims description 9
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 abstract description 84
- 239000004065 semiconductor Substances 0.000 abstract description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 20
- 239000000126 substance Substances 0.000 abstract description 2
- 239000000356 contaminant Substances 0.000 abstract 1
- 229910001220 stainless steel Inorganic materials 0.000 description 8
- 239000010935 stainless steel Substances 0.000 description 8
- LIXXICXIKUPJBX-UHFFFAOYSA-N [Pt].[Rh].[Pt] Chemical compound [Pt].[Rh].[Pt] LIXXICXIKUPJBX-UHFFFAOYSA-N 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- 238000009835 boiling Methods 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- -1 for example Substances 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- PXXKQOPKNFECSZ-UHFFFAOYSA-N platinum rhodium Chemical compound [Rh].[Pt] PXXKQOPKNFECSZ-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Cleaning By Liquid Or Steam (AREA)
- Extraction Or Liquid Replacement (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔概 要〕
被洗浄物の表面を洗浄液の蒸気に曝し、被洗浄物の表面
の洗浄を行う蒸気洗浄装置に関し、被洗浄物の表面に洗
浄液の中に含まれる微細な異物が付着するのを防止でき
る蒸気洗浄装置の提供を目的とし、
加熱されて蒸気となる洗浄液を槽内に貯蔵する洗浄槽と
、
洗浄槽内で洗浄液に裏面を接触し、洗浄液を表面から滲
出させる多孔質体と、
多孔質体を加熱し、多孔質体の表面から滲出した洗浄液
を蒸発させて、洗浄液の蒸気を生成する加熱手段を含ん
で構成し、
多孔質体の表面から蒸発した洗浄液の蒸気に被洗浄物の
表面をさらし、被洗浄物の表面に蒸気から凝結して液滴
となった洗浄液により該被洗浄物の表面の洗浄を行うよ
うに蒸気洗浄装置を構成する。[Detailed Description of the Invention] [Summary] Regarding a steam cleaning device that cleans the surface of an object to be cleaned by exposing the surface of the object to the vapor of a cleaning liquid, fine particles contained in the cleaning liquid are removed from the surface of the object to be cleaned. The purpose of this device is to provide a steam cleaning device that can prevent foreign matter from adhering to the steam cleaning device. a porous body to be exuded; and a heating means for heating the porous body to evaporate cleaning liquid exuded from the surface of the porous body to generate vapor of the cleaning liquid; The steam cleaning apparatus is configured to expose the surface of an object to be cleaned to the vapor of a cleaning liquid, and to clean the surface of the object with the cleaning liquid that has condensed from the vapor and become droplets on the surface of the object to be cleaned.
本発明は、蒸気洗浄装置、特に被洗浄物の表面に洗浄液
の中に含まれる異物が付着するのを防止できる蒸気洗浄
装置に関する。The present invention relates to a steam cleaning device, and particularly to a steam cleaning device that can prevent foreign matter contained in a cleaning liquid from adhering to the surface of an object to be cleaned.
４ＭＤＲＡＭなどで見られるように、最近の半導体装置
の配線パターン幅やその間隔等は、サブミクロン領域に
入っている。As seen in 4MDRAM and the like, the wiring pattern width and spacing of recent semiconductor devices are in the submicron range.
かかる半導体装置を歩留まり良く製造するには、や半導
体ウェーハの表面に異物を付着させないことが極めて重
要である。In order to manufacture such semiconductor devices with high yield, it is extremely important to prevent foreign matter from adhering to the surface of the semiconductor wafer.
次に、従来の蒸気洗浄装置について、第２図を参照しな
がら説明する。Next, a conventional steam cleaning device will be explained with reference to FIG. 2.
第２図は、従来の蒸気洗浄装置の要部を模式的に示す側
断面図である。FIG. 2 is a side sectional view schematically showing the main parts of a conventional steam cleaning device.
尚、同じ部品・材料に対しては全図を通して同じ記号を
付与しである。Note that the same symbols are given to the same parts and materials throughout the drawings.
従来の蒸気洗浄装置は、第２図に示すように洗浄液、例
えばイソプロピルアルゴール３１ （ｉ ５ｏｐｒｏｐ
ｙｌ ａｌｃｏｈｏｌ；沸点８２．４度Ｃ）を入れる升
形をした金属製の洗浄槽１１と、
洗浄槽１１内のイソプロピルアルコール３１の温度を測
定し、イソプロピルアルコール３１の温度に対応した電
気信号を出力する温度測定手段、例えば白金−白金ロジ
ウム熱電対１２と、
洗浄槽１１の底板の裏面に固定されて、底板を介して洗
浄槽１１内のイソプロピルアルコール３１を加熱する加
熱ヒータ１３と、
白金−白金ロジウム熱電対１２から入力した電気信号に
基づいて加熱ヒータ１３に供給する電流を制御し、洗浄
槽１１内のイソプロピルアルコール３１の温度を予め決
めた温度に保持する温度制御装置１４を含んで構成した
ものである。Conventional steam cleaning equipment uses a cleaning liquid such as isopropyl algol 31 (i 5oprop
The temperature of the square-shaped metal cleaning tank 11 containing alcohol (boiling point 82.4 degrees Celsius) and the isopropyl alcohol 31 in the cleaning tank 11 is measured, and an electrical signal corresponding to the temperature of the isopropyl alcohol 31 is output. Temperature measuring means, for example, a platinum-platinum rhodium thermocouple 12; a heater 13 fixed to the back surface of the bottom plate of the cleaning tank 11 to heat the isopropyl alcohol 31 in the cleaning tank 11 via the bottom plate; and a platinum-platinum rhodium thermocouple. It is configured to include a temperature control device 14 that controls the current supplied to the heater 13 based on the electric signal input from the thermocouple 12 and maintains the temperature of the isopropyl alcohol 31 in the cleaning tank 11 at a predetermined temperature. It is.
かかる構成をした従来の蒸気洗浄装置により、収納容器
３３に収納した被洗浄物、例えば半導体つ工−ハ３２を
蒸気洗浄する方法を、その工程順に従って説明する。A method for steam cleaning an object to be cleaned, such as a semiconductor tool 32, stored in a storage container 33 using a conventional steam cleaning apparatus having such a configuration will be explained in accordance with the steps.
まず、洗浄槽１１に入れた洗浄液、例えばイ・ノプロビ
ルアルコール３１の加熱温度、例えば加熱温度１００度
Ｃの温度データを予め入力した温度制御装置１４を作動
する。First, the temperature control device 14 to which temperature data of the heating temperature of the cleaning liquid, such as i-noprobil alcohol 31, placed in the cleaning tank 11, for example, the heating temperature of 100 degrees Celsius, is input in advance is activated.
すると、温度制御装置１４は、白金−白金ロジウム熱電
対１２から入力した電気信号に基づいて加熱ヒータ１３
を制御し、イソプロピルアルコール３１の温度を１００
度Ｃに加熱し、イソプロピルアルコール３１をこの温度
に保持する。Then, the temperature control device 14 controls the heater 13 based on the electrical signal input from the platinum-platinum rhodium thermocouple 12.
to control the temperature of isopropyl alcohol 31 to 100
℃ and hold the isopropyl alcohol 31 at this temperature.
かかる状態のイソプロピルアルコール３１は、蒸気３１
ａとなって盛んに蒸発することとなる。Isopropyl alcohol 31 in such a state becomes vapor 31
a and evaporates actively.
従って、洗浄槽１１内に半導体ウエーノＸ３２を収納し
た収納容器３３を挿入してイソプロピルアルコール３１
の蒸気３１ａに曝すと、この蒸気３１ａは半導体ウェー
ハ３２の表面で凝結して液体のイソプロピルアルコール
３１に戻り、半導体ウェーハ３２の表面の汚れや異物を
洗い流すこととなる。Therefore, the storage container 33 containing the semiconductor waeno X32 is inserted into the cleaning tank 11, and the isopropyl alcohol 31
When exposed to the vapor 31a, the vapor 31a condenses on the surface of the semiconductor wafer 32 and returns to liquid isopropyl alcohol 31, thereby washing away dirt and foreign matter from the surface of the semiconductor wafer 32.
なお、洗浄槽１１は、升形の容器１１ａと、水冷管１１
ｂとで構成したものである。Note that the cleaning tank 11 includes a square-shaped container 11a and a water-cooled pipe 11.
It is composed of b.
この洗浄槽１１の水冷管１１ｂは、升形の容器１１ａの
上部の内面に冷却水が通る銅製の管を周回して配設した
ものである。The water-cooled pipe 11b of the cleaning tank 11 is a copper pipe arranged around the inner surface of the upper part of the box-shaped container 11a, through which cooling water passes.
従って、洗浄槽１１の水冷管１１ｂ部に上昇して来たイ
ソプロピルアルコール３１の蒸気３１ａは、水冷管１１
ｂに冷却されて凝結するために、洗浄槽１１外に漏出す
ることはない。Therefore, the vapor 31a of isopropyl alcohol 31 that has risen to the water-cooled pipe 11b portion of the cleaning tank 11 is removed from the water-cooled pipe 11b.
Since it is cooled to b and condenses, it does not leak out of the cleaning tank 11.
ところが、従来の蒸気洗浄装置は、洗浄槽１１内のイソ
プロピルアルコール３１から蒸気３１ａを盛んに発生さ
せるため、イソプロピルアルコール３１を沸点、例えば
８２．４度Ｃ程度に加熱していた。However, in the conventional steam cleaning apparatus, in order to actively generate steam 31a from the isopropyl alcohol 31 in the cleaning tank 11, the isopropyl alcohol 31 is heated to the boiling point, for example, about 82.4 degrees Celsius.
このため、イソプロピルアルコール３１の沸騰により発
生した泡が、イソプロピルアルコール３１と大気との界
面近くで破裂する際のエネルギーにより、異物を含む液
体のイソプロピルアルコール３１が周囲に飛散し、収納
容器３３に収納されて洗浄槽１１内に挿入された半導体
ウェーハ３２の表面に付着し、蒸気洗浄完了後にもその
まま半導体ウェーハ３２の表面に付着して残るという問
題があった。Therefore, due to the energy generated when the bubbles generated by boiling of the isopropyl alcohol 31 burst near the interface between the isopropyl alcohol 31 and the atmosphere, the liquid isopropyl alcohol 31 containing foreign matter is scattered around and stored in the storage container 33. There is a problem in that the vapors adhere to the surface of the semiconductor wafer 32 inserted into the cleaning tank 11 and remain attached to the surface of the semiconductor wafer 32 even after the steam cleaning is completed.
本発明は、このような問題を解決するためになされたも
ので、その目的は被洗浄物の表面に洗浄液の中に含まれ
る微細な異物が付着するのを防止できる蒸気洗浄装置の
提供にある。The present invention was made to solve such problems, and its purpose is to provide a steam cleaning device that can prevent fine foreign matter contained in the cleaning liquid from adhering to the surface of the object to be cleaned. .
前記目的は、第１図に示すように加熱されて蒸気となる
洗浄液３１を槽内に貯蔵する洗浄槽２１と、洗浄槽２１
内で洗浄液３１に裏面２２ａを接触し、洗浄液３１を表
面２２ｂから滲出させる多孔質体２２と、多孔質体２２
を加熱し、多孔質体２２の表面２２ｂから滲出した洗浄
液３１を蒸発させて、洗浄液３１の蒸気３１ａを生成す
る加熱手段（２３）を含んで構成し、多孔質体２２の表
面２２ｂから蒸発した洗浄液３１の蒸気３１ａに被洗浄
物３２の表面をさらし、被洗浄物３２の表面に蒸気３１
ａから凝結して液滴となった洗浄液３１により該被洗浄
物３２の表面の洗浄を行うことを特徴とする蒸気洗浄装
置により達成される。As shown in FIG.
a porous body 22 whose back surface 22a contacts the cleaning liquid 31 inside the body and exudes the cleaning liquid 31 from the surface 22b;
and evaporates the cleaning liquid 31 exuded from the surface 22b of the porous body 22 to generate vapor 31a of the cleaning liquid 31. The surface of the object 32 to be cleaned is exposed to the steam 31a of the cleaning liquid 31, and the steam 31 is applied to the surface of the object 32 to be cleaned.
This is achieved by a steam cleaning apparatus characterized in that the surface of the object to be cleaned 32 is cleaned with the cleaning liquid 31 that has condensed from a to form droplets.
本発明の蒸気洗浄装置は、洗浄槽２１の洗浄液３１と裏
面２２ａと接触し、洗浄液３１を表面２２ｂから滲出さ
せる多孔質体２２を加熱し、
多孔質体２２の表面に滲出した洗浄液３１を、恰も昇華
させる如くして蒸気３１ａにしている。The steam cleaning device of the present invention heats the porous body 22 that contacts the cleaning liquid 31 of the cleaning tank 21 and the back surface 22a and exudes the cleaning liquid 31 from the surface 22b, and removes the cleaning liquid 31 exuded onto the surface of the porous body 22. It is made into steam 31a as if by sublimation.
このため、前述したような洗浄液３１の沸騰による“泡
”の発生が無い。Therefore, there is no generation of "bubbles" due to boiling of the cleaning liquid 31 as described above.
従って、蒸気洗浄時に洗浄液３１の中の異物が、被洗浄
物３１０表面に付着することがない。Therefore, foreign matter in the cleaning liquid 31 does not adhere to the surface of the object to be cleaned 310 during steam cleaning.
以下、本発明の一実施例について、第１図を参照しなが
ら説明する。An embodiment of the present invention will be described below with reference to FIG.
第１図は、本発明の一実施例の蒸気洗浄装置の要部を模
式的に示す側断面図である。FIG. 1 is a side sectional view schematically showing essential parts of a steam cleaning apparatus according to an embodiment of the present invention.
第１図に示す本発明の一実施例の蒸気洗浄装置は、第２
図により説明した従来の蒸気洗浄装置の洗浄槽１１の内
周面に、底部の中央部に開口２１ａ２を設けた凹部２１
ａ１を中央部に有する装着板２１ａを固着し、槽内に洗
浄液、例えばイソプロピルアルコール３１が入れられる
金属製の洗浄槽２１と、装着板２１ａの凹部２１ａ１に
嵌着され、裏面２２ａと接触したイソプロピルアルコー
ル３１を表面２２ｂに連続して滲出する多孔質体、例え
ば粒状ステンレスを焼結して形成したステンレス焼結体
２２と、ステンレス焼結体２２の裏面２２ａに固着され
、管内に高温、例えば１００度Ｃ程度の蒸気を通過させ
てステンレス焼結体２２を１００度Ｃ程度に加熱する加
熱手段、例えばスチームバイブ２３と、洗浄槽２１の下
側部分を収納し、槽内に入れた水３４と洗浄槽２１の下
側部分の外側面とを接触させる温水槽２４と、
温水槽２４の水３４の温度を測定し、水３４の温度に対
応した電気信号を出力する温度測定手段、例えば白金−
白金ロジウム熱電対２５と、
温水槽２４内に挿入されて、温水槽２４内の水３４を加
熱する加熱ヒータ２６と、
白金−白金ロジウム熱電対２５から入力した電気信号に
基づいて加熱ヒータ２６に供給する電流を制御して、温
水槽２４内の水３４の温度を予め決めた温度、例えば８
０度Ｃに保持する温度制御装置２７を含んで構成したも
のである。The steam cleaning apparatus according to one embodiment of the present invention shown in FIG.
A recess 21 having an opening 21a2 in the center of the bottom in the inner circumferential surface of the cleaning tank 11 of the conventional steam cleaning device illustrated in the drawings.
A metal cleaning tank 21 is fixed with a mounting plate 21a having a center portion a1, and a cleaning liquid such as isopropyl alcohol 31 is placed in the tank. A stainless steel sintered body 22 formed by sintering a porous body such as granular stainless steel that continuously exudes alcohol 31 on a surface 22b, and a stainless steel sintered body 22 that is fixed to the back surface 22a of the stainless steel sintered body 22 and is heated to a high temperature, for example, 100 A heating means that heats the stainless steel sintered body 22 to about 100 degrees C by passing steam of about degrees C, for example, a steam vibrator 23, and a water 34 that houses the lower part of the cleaning tank 21 and placed in the tank. A hot water tank 24 that makes contact with the outer surface of the lower part of the cleaning tank 21; and a temperature measuring means, such as a platinum-metal temperature measuring means, that measures the temperature of the water 34 in the hot water tank 24 and outputs an electric signal corresponding to the temperature of the water 34.
A platinum-rhodium thermocouple 25 , a heater 26 that is inserted into the hot water tank 24 and heats the water 34 in the hot water tank 24 , and a heater 26 that is connected to the heater 26 based on an electric signal input from the platinum-platinum rhodium thermocouple 25 . By controlling the supplied current, the temperature of the water 34 in the hot water tank 24 is set to a predetermined temperature, e.g.
It is configured to include a temperature control device 27 that maintains the temperature at 0 degrees Celsius.
かかる構成をした本発明の一実施例の蒸気洗浄装置によ
り、収納容器３３に収納した被洗浄物、例えば半導体ウ
ェーハ３２を蒸気洗浄する方法を、その工程順に従って
説明する。A method for steam cleaning an object to be cleaned, such as a semiconductor wafer 32, stored in the storage container 33 using the steam cleaning apparatus according to an embodiment of the present invention having such a configuration will be described in accordance with the process order.
まず、温水槽２４に入れた水３４の加熱温度、例えば８
０度Ｃの温度データを予め入力した温度制御装置２７を
作動すると、温度制御装置２７は、白金−白金ロジウム
熱電対２５から入力した電気信号に基づいて加熱ヒータ
２６を制御し、水３４の温度を８０度Ｃに加熱し、水３
４をこの温度に保持する。First, the heating temperature of the water 34 put in the hot water tank 24, for example, 8.
When the temperature control device 27 into which temperature data of 0 degrees Celsius is input in advance is activated, the temperature control device 27 controls the heater 26 based on the electric signal input from the platinum-platinum-rhodium thermocouple 25 to adjust the temperature of the water 34. Heat to 80 degrees C and add 3 liters of water.
4 at this temperature.
温水槽２４の水３４の温度をかかる温度に保持すると、
洗浄槽２１内のイソプロピルアルコール３１の温度も８
０度Ｃ近くに上昇する。When the temperature of the water 34 in the hot water tank 24 is maintained at this temperature,
The temperature of the isopropyl alcohol 31 in the cleaning tank 21 is also 8.
It will rise to near 0 degrees C.
洗浄槽２１内のイソプロピルアルコール３１の温度が８
０度Ｃ近くに上昇したら、スチームパイプ２３の中に１
００度Ｃ近くの水蒸気を通し、ステンレス焼結体２２を
１００度Ｃ近くに加熱する。The temperature of the isopropyl alcohol 31 in the cleaning tank 21 is 8
When the temperature rises to near 0 degrees C, there is 1 in the steam pipe 23.
The stainless steel sintered body 22 is heated to about 100 degrees Celsius by passing water vapor at about 00 degrees Celsius.
すると、ステンレス焼結体２２０表面２２ｂに滲出した
イソプロピルアルコール３１は、ステンレス焼結体２２
のスポンジ状の表面２２ｂから昇華するが如くに蒸発し
て蒸気３１ａとなって洗浄槽１１内を満たすこととなる
。Then, the isopropyl alcohol 31 exuded onto the surface 22b of the stainless steel sintered body 220
It evaporates as if sublimating from the sponge-like surface 22b and becomes steam 31a, which fills the inside of the cleaning tank 11.
従って、洗浄槽２１内に半導体ウェーハ３２を収納した
収納容器３３を挿入してイソプロピルアルコール３工の
蒸気３１ａに曝すと、この蒸気３１ａは半導体ウェーハ
３２の表面で凝結して液体のイソプロピルアルコール３
１に戻り、半導体ウェーハ３２の表面の汚れや異物を洗
い流すこととなる。Therefore, when the storage container 33 containing the semiconductor wafer 32 is inserted into the cleaning tank 21 and exposed to the vapor 31a of isopropyl alcohol 3, the vapor 31a condenses on the surface of the semiconductor wafer 32, and the liquid isopropyl alcohol 3
Returning to Step 1, dirt and foreign matter on the surface of the semiconductor wafer 32 are washed away.
以上の説明から明らかなように本発明によれば、洗浄液
、例えばイソプロピルアルコールが沸騰した際の泡を発
生させることく、イソプロピルアルコールの蒸気を発生
させることができる。As is clear from the above description, according to the present invention, it is possible to generate vapor of isopropyl alcohol without generating bubbles when the cleaning liquid, for example, isopropyl alcohol, boils.
従って、本発明の蒸気洗浄装置で被洗浄物、例えば半導
体ウェーハを蒸気洗浄すれば、イソプロピルアルコール
の中に含まれる異物が半導体ウェーハの表面に付着し、
そのまま半導体ウェーハの表面に残ることがなくなる。Therefore, when an object to be cleaned, for example, a semiconductor wafer, is steam cleaned using the steam cleaning apparatus of the present invention, foreign substances contained in isopropyl alcohol will adhere to the surface of the semiconductor wafer.
It will no longer remain on the surface of the semiconductor wafer.
第１図は、本発明の一実施例の蒸気洗浄装置の要部を模
式的に示す側断面図、
第２図は、従来の蒸気洗浄装置の要部を模式的に示す側
断面図である。
図において、
２１は洗浄槽、
２２はステンレス焼結体（多孔質体）、２３はスチーム
バイブ（加熱手段）、
２４は温水槽、
２５は白金−白金ロジウム熱電対、
２６は加熱ヒータ、
２７は温度制御装置、
３１はイソプロピルアルコール（洗浄液）、３２は半導
体ウェーハ（被洗浄物）、
３３は収納容器、
３４は水をそれぞれ示す。FIG. 1 is a side sectional view schematically showing the main parts of a steam cleaning device according to an embodiment of the present invention. FIG. 2 is a side sectional view schematically showing the main parts of a conventional steam cleaning device. . In the figure, 21 is a cleaning tank, 22 is a stainless steel sintered body (porous body), 23 is a steam vibe (heating means), 24 is a hot water tank, 25 is a platinum-platinum rhodium thermocouple, 26 is a heater, and 27 is a heating tank. A temperature control device, 31 is isopropyl alcohol (cleaning liquid), 32 is a semiconductor wafer (object to be cleaned), 33 is a storage container, and 34 is water.
Claims (1)
洗浄槽（２１）と、 前記洗浄槽（２１）内で前記洗浄液（３１）に裏面（２
２ａ）を接触し、洗浄液（３１）を表面（２２ｂ）から
滲出させる多孔質体（２２）と、 前記多孔質体（２２）を加熱し、多孔質体（２２）の表
面（２２ｂ）から滲出した前記洗浄液（３１）を蒸発さ
せて、洗浄液（３１）の蒸気（３１ａ）を生成する加熱
手段（２３）を含んで構成し、 前記多孔質体（２２）の表面（２２ｂ）から蒸発した前
記洗浄液（３１）の蒸気（３１ａ）に被洗浄物（３２）
の表面をさらし、被洗浄物（３２）の表面に前記蒸気（
３１ａ）から凝結して液滴となった洗浄液（３１）によ
り該被洗浄物（３２）の表面の洗浄を行うことを特徴と
する蒸気洗浄装置。[Scope of Claims] A cleaning tank (21) in which a cleaning liquid (31) that is heated to become vapor is stored in the tank, and a back surface (2) of the cleaning liquid (31) in the cleaning tank (21).
2a) to cause the cleaning liquid (31) to ooze out from the surface (22b); The heating means (23) is configured to evaporate the cleaning liquid (31) and generate vapor (31a) of the cleaning liquid (31); The object to be cleaned (32) is immersed in the steam (31a) of the cleaning liquid (31).
The surface of the object to be cleaned (32) is exposed to the steam (
A steam cleaning device characterized in that the surface of the object to be cleaned (32) is cleaned with a cleaning liquid (31) condensed into droplets from 31a).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19350590A JPH0479223A (en) | 1990-07-20 | 1990-07-20 | Vapor cleaning device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19350590A JPH0479223A (en) | 1990-07-20 | 1990-07-20 | Vapor cleaning device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0479223A true JPH0479223A (en) | 1992-03-12 |
Family
ID=16309170
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19350590A Pending JPH0479223A (en) | 1990-07-20 | 1990-07-20 | Vapor cleaning device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0479223A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5956859A (en) * | 1997-05-22 | 1999-09-28 | Ryoden Semiconductor System Emgineering Corporation | Drying apparatus for processing surface of substrate |
| US5996242A (en) * | 1997-04-04 | 1999-12-07 | Ryoden Semiconductor System Engineering Corporation | Drying apparatus and method |
| US6032382A (en) * | 1997-05-22 | 2000-03-07 | Mitsubishi Denki Kabushiki Kaisha | Drying apparatus and method using IPA of a semiconductor wafer |
| KR100589080B1 (en) * | 1998-09-22 | 2006-08-30 | 삼성전자주식회사 | Polymer cleaning equipment for semiconductor manufacturing equipment process kit |
-
1990
- 1990-07-20 JP JP19350590A patent/JPH0479223A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5996242A (en) * | 1997-04-04 | 1999-12-07 | Ryoden Semiconductor System Engineering Corporation | Drying apparatus and method |
| US5956859A (en) * | 1997-05-22 | 1999-09-28 | Ryoden Semiconductor System Emgineering Corporation | Drying apparatus for processing surface of substrate |
| US6032382A (en) * | 1997-05-22 | 2000-03-07 | Mitsubishi Denki Kabushiki Kaisha | Drying apparatus and method using IPA of a semiconductor wafer |
| KR100589080B1 (en) * | 1998-09-22 | 2006-08-30 | 삼성전자주식회사 | Polymer cleaning equipment for semiconductor manufacturing equipment process kit |
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