JPH0479174B2 - - Google Patents
Info
- Publication number
- JPH0479174B2 JPH0479174B2 JP3248688A JP3248688A JPH0479174B2 JP H0479174 B2 JPH0479174 B2 JP H0479174B2 JP 3248688 A JP3248688 A JP 3248688A JP 3248688 A JP3248688 A JP 3248688A JP H0479174 B2 JPH0479174 B2 JP H0479174B2
- Authority
- JP
- Japan
- Prior art keywords
- diffusion region
- photovoltaic
- impedance element
- gate
- impurity semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000009792 diffusion process Methods 0.000 claims description 38
- 239000012535 impurity Substances 0.000 claims description 38
- 239000004065 semiconductor Substances 0.000 claims description 26
- 229910052782 aluminium Inorganic materials 0.000 claims description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 13
- 230000003287 optical effect Effects 0.000 claims description 8
- 239000007787 solid Substances 0.000 claims description 5
- 230000007423 decrease Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 230000001052 transient effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Landscapes
- Electronic Switches (AREA)
- Semiconductor Integrated Circuits (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63032486A JPH01208018A (ja) | 1988-02-15 | 1988-02-15 | 固体リレー |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63032486A JPH01208018A (ja) | 1988-02-15 | 1988-02-15 | 固体リレー |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH01208018A JPH01208018A (ja) | 1989-08-22 |
JPH0479174B2 true JPH0479174B2 (enrdf_load_stackoverflow) | 1992-12-15 |
Family
ID=12360315
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63032486A Granted JPH01208018A (ja) | 1988-02-15 | 1988-02-15 | 固体リレー |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01208018A (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6037602A (en) * | 1998-02-13 | 2000-03-14 | C.P. Clare Corporation | Photovoltaic generator circuit and method of making same |
-
1988
- 1988-02-15 JP JP63032486A patent/JPH01208018A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH01208018A (ja) | 1989-08-22 |
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